A TGV through-hole processing method and glass substrate

Abstract

The present invention discloses a TGV through-hole processing method and a glass substrate, wherein the TGV through-hole processing method comprises: matching a mold according to the size data of the TGV through-hole, wherein the mold comprises a metal wire matrix matching the TGV through-hole; injecting molten glass into the mold, and controlling the temperature of the molten glass to be not lower than a first preset temperature; the melting point of the metal wires in the metal wire matrix is ​​greater than the first preset temperature; annealing the molten glass in the mold; cooling the annealed molten glass; cutting the cooled glass, wherein the cutting direction is perpendicular to the tensioning direction of the metal wire matrix; placing the cut glass in a corrosive solution, wherein the corrosive solution is used to corrode the metal wire matrix. The TGV through-hole processing method of the embodiment of the present application obtains better verticality and smoothness of the side wall of the glass through-hole.

Description

Technical Field

[0001] The present invention relates to the technical field of chip stacking packaging, and in particular to a TGV through-hole processing method and a glass substrate. Background Art

[0002] Chip stacking packaging can achieve higher I / O density, faster signal transmission speed and better electrical and thermal performance, thereby improving the performance and functionality of the chip, so chip stacking packaging has a good market prospect.

[0003] Silicon-based adapters, namely through silicon vias (TSVs), play a role in signal extension and interconnection between chips in the chip packaging process. However, silicon-based adapters have the following technical problems: ① High cost. The production of through silicon vias uses silicon etching process, and then the through silicon vias require oxidation insulation layer, thin wafer holding and other technologies; ② Poor electrical performance. Silicon material is a semiconductor material. When the transmission line transmits a signal, the signal has a strong electromagnetic coupling effect with the substrate material, and eddy current phenomenon is generated in the substrate, resulting in poor signal integrity (insertion loss, crosstalk, etc.). Compared with through silicon vias, through glass vias (TGV) have the following advantages: ① Low cost: Benefiting from the easy availability of large-size ultra-thin panel glass and the absence of the need to deposit an insulating layer, the production cost of a glass adapter is only about 1 / 8 of that of a silicon-based adapter; ② Excellent high-frequency electrical properties: Glass material is an insulator material with a dielectric constant of only about 1 / 3 of that of silicon material, and a loss factor 2 to 3 orders of magnitude lower than that of silicon material, which greatly reduces substrate loss and parasitic effects, and can effectively improve the integrity of the transmitted signal; ③ Large-size ultra-thin glass substrates are easy to obtain: Glass manufacturers such as Corning, Asahi Glass, and Schott can mass-produce ultra-large-size (greater than 2m×2m) and ultra-thin (less than 50μm) panel glass and ultra-thin flexible glass materials; ④ Simple process flow: There is no need to deposit an insulating layer on the substrate surface and the inner wall of the TGV, and the ultra-thin adapter does not require secondary thinning; ⑤ Strong mechanical stability: When the thickness of the adapter is less than 100μm, the warping is still small. There are many existing methods for forming through-glass holes, but all of them have various disadvantages. For example, the sandblasting method has the disadvantages of large aperture and large hole spacing of the through-glass holes; the photosensitive glass method has the disadvantages of high price and large difference in precision between different graphics; the focused discharge method has the disadvantage of poor verticality of the through-glass holes; the plasma etching method has the disadvantages of complex process, high cost and low etching rate; the laser ablation method has the disadvantages of side cracks and high roughness.

[0004] How to solve the above-mentioned technical problems has become a technical problem that needs to be solved urgently in the industry. Summary of the invention

[0005] In order to at least solve the above technical problems, the object of the present invention is to provide a TGV through-hole processing method, which can obtain a glass through-hole with better side wall verticality and smoothness.

[0006] In order to achieve the above-mentioned purpose, the TGV through-hole processing method provided in the present application includes:

[0007] A mold is matched according to the size data of the TGV through hole, wherein the mold includes a metal wire matrix matching the TGV through hole;

[0008] Injecting molten glass into the mold, and controlling the temperature of the molten glass to be no lower than a first preset temperature;

[0009] The melting point of the metal wires in the metal wire matrix is ​​greater than a first preset temperature;

[0010] Annealing the molten glass in the mold;

[0011] Cooling the molten glass after annealing;

[0012] Cutting the cooled glass in a direction perpendicular to the tensioning direction of the metal wire matrix;

[0013] The cut glass is placed in an etching solution which is used to etch away the wire matrix.

[0014] Furthermore, the metal wires of the metal wire matrix are tungsten wires, gold or platinum.

[0015] Furthermore, before the step of annealing the glass in the mold, the process further includes:

[0016] Evacuate the mold and control the vacuum degree to Pa, the vacuuming time shall not be less than 1 hour.

[0017] Furthermore, the corrosion solution includes: hydrochloric acid solution and / or sulfuric acid solution and / or nitric acid solution.

[0018] Furthermore, the concentration of hydrogen ions in the corrosion solution is 1-5 mol / L.

[0019] Furthermore, the step of placing the cut glass in a corrosive solution further includes:

[0020] The temperature of the corrosion solution was controlled at 30°C;

[0021] The glass is placed in the corrosive solution for no less than 2 hours.

[0022] Furthermore, the step of placing the cut glass in a corrosive solution further includes:

[0023] The etching solution is subjected to ultrasonic vibration.

[0024] Furthermore, before the step of injecting the molten glass into the mold, the method further comprises:

[0025] heating the mold to a second preset temperature;

[0026] The first preset temperature is 1450°C-1750°C;

[0027] The second preset temperature is not less than 650°C.

[0028] Furthermore, the method further comprises: cleaning the glass after the metal wire matrix is ​​corroded.

[0029] To achieve the above-mentioned purpose, the glass substrate provided in the present application includes: a glass substrate manufactured by adopting the above-mentioned TGV through-hole processing method.

[0030] The TGV through-hole processing method of the embodiment of the present application includes: matching a mold according to the size data of the TGV through-hole, wherein the mold includes a metal wire matrix matching the TGV through-hole; injecting molten glass into the mold, and controlling the temperature of the molten glass to be not lower than a first preset temperature; the melting point of the metal wire in the metal wire matrix is ​​greater than the first preset temperature; annealing the molten glass in the mold; cooling the molten glass after the annealing treatment; cutting the glass after the cooling treatment, and the cutting direction is perpendicular to the tensioning direction of the metal wire matrix; placing the cut glass in a corrosive solution, and the corrosive solution is used to corrode the metal wire matrix. The verticality of the side wall of the glass through-hole obtained by the TGV through-hole processing method of the embodiment of the present application is consistent with the metal wire, so the verticality and smoothness are better; a depth-to-width ratio of >10:1 can be achieved, thereby improving the performance of the through-hole, that is, a deeper and narrower through-hole can be achieved, and the application range of the TGV glass substrate through-hole is expanded; relative to the existing process, the manufacturing process of the present application is simpler, the production efficiency is improved, the production cost is reduced, and it has better market competitiveness. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings are used to provide a further understanding of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application. In the accompanying drawings:

[0032] Figure 1 It is a schematic flow chart of the TGV through-hole processing method according to an embodiment of the present application. DETAILED DESCRIPTION

[0033] The embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be construed as being limited to the embodiments described herein. Instead, these embodiments are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not intended to limit the scope of protection of the present application.

[0034] It should be understood that the various steps described in the method implementation of the present application can be performed in different orders and / or performed in parallel. In addition, the method implementation may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this respect.

[0035] The term "including" and its variations used herein are open inclusions, i.e., "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description.

[0036] It should be noted that the modifications of "one" and "plurality" mentioned in this application are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more". "Plurality" should be understood as two or more.

[0037] Embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0038] The present application embodiment provides a TGV through-hole processing method, comprising:

[0039] A mold is matched according to the size data of the TGV through hole, wherein the mold includes a metal wire matrix matching the TGV through hole;

[0040] Injecting molten glass into the mold, and controlling the temperature of the molten glass to be no lower than a second preset temperature;

[0041] The melting point of the metal wires in the metal wire matrix is ​​greater than a first preset temperature;

[0042] Annealing the molten glass in the mold;

[0043] Cooling the molten glass after annealing;

[0044] Cutting the cooled glass in a direction perpendicular to the tensioning direction of the metal wire matrix;

[0045] The cut glass is placed in an etching solution which is used to etch away the wire matrix.

[0046] Example 1

[0047] Figure 1 This is a schematic diagram of the TGV through-hole processing method according to an embodiment of the present application. Figure 1 , the TGV through-hole processing method of an embodiment of the present application is described in detail.

[0048] First, in step 101, a mold is matched according to the size data of the TGV through hole, and the mold includes a metal wire matrix matching the TGV through hole.

[0049] In an exemplary embodiment, the mold is matched according to the size data of the TGV through hole, for example, the corresponding mold is selected according to the aperture of the TGV through hole, the gap between the through holes, etc.

[0050] In an exemplary embodiment, a metal wire matrix matching the TGV through holes is provided in the mold, and it can be understood that the diameter of the metal wire corresponds to the diameter of the TGV through holes, and the gaps between the TGV through holes correspond to the gaps between the metal wires.

[0051] In an exemplary embodiment, the diameter of the wires in the wire matrix ranges from 20 to 100 microns.

[0052] In an exemplary embodiment, the wire matrix within the mold is in a tensioned state.

[0053] In an exemplary embodiment, the metal wire is in a tensioned state and a wire arrangement machine or other threading device is used to arrange the metal wire into an array pattern corresponding to the TGV through hole. The length, width, spacing, angle, etc. of the array pattern can be set according to the size of the TGV through hole.

[0054] In an exemplary embodiment, the length of the tensioned portion of the wire is above 1000 microns as required.

[0055] Step 102, injecting molten glass into the mold, and controlling the temperature of the molten glass to be not lower than a first preset temperature; the melting point of the metal wires in the metal wire matrix is ​​greater than the first preset temperature.

[0056] In an exemplary embodiment, the molten glass is injected into the mold, and the temperature of the molten glass is not lower than a first preset temperature.

[0057] In an exemplary embodiment, the melting point of the metal wires in the metal wire matrix is ​​greater than the first preset temperature.

[0058] In an exemplary embodiment, the metal wires in the metal wire matrix are, for example, tungsten wires, gold, platinum, etc.

[0059] In an exemplary embodiment, the first preset temperature is not lower than the melting point of glass.

[0060] In an exemplary embodiment, the first preset temperature is, for example, above 1450°C. Usually, the first preset temperature is selected from 1450°C to 1750°C.

[0061] In an exemplary embodiment, the molten glass injected into the mold is preferably used to completely immerse the metal wire matrix in a tensioned state in the mold.

[0062] In an exemplary embodiment, before the molten glass is injected into the mold, the mold may be preheated, for example, the mold including the metal wire matrix is ​​heated to a second preset temperature.

[0063] In an exemplary embodiment, the second preset temperature is not lower than the softening temperature of the glass.

[0064] In an exemplary embodiment, the second preset temperature is not less than 650°C, and the second preset temperature is, for example, 650°C-800°C. The first preset temperature is usually 650°C. Of course, when preheating the mold, the temperature of the mold can be directly heated to the same temperature as the glass melt as needed.

[0065] In an exemplary embodiment, the mold is preheated to the second preset temperature in order to prevent the molten glass from solidifying at a portion in contact with the mold when the molten glass is injected into the mold.

[0066] In an exemplary embodiment, as required, the metal wire matrix may be subjected to an anti-oxidation treatment before the mold is heated to the first preset temperature.

[0067] Step 103, annealing the molten glass in the mold.

[0068] In an exemplary embodiment, the molten glass in the mold is annealed, for example, the entire mold is placed in an annealing furnace for annealing to eliminate the stress of the glass.

[0069] In an exemplary embodiment, before the annealing treatment, the mold after the glass melt is immersed in the metal wire matrix is ​​heated so that the mold temperature also reaches a second preset temperature; then the mold is vacuumed and the vacuum degree is controlled to Pa, the vacuuming time shall not be less than 1 hour.

[0070] In an exemplary embodiment, the vacuum is applied to eliminate bubbles in the molten glass.

[0071] In an exemplary embodiment, the mold is heated to the second preset temperature to prevent the glass melt from cooling and solidifying at the contact portion between the mold and the mold.

[0072] In an exemplary embodiment, the vacuum is applied until there are no bubbles in the molten glass.

[0073] In step 104, the annealed molten glass is cooled.

[0074] In an exemplary embodiment, the annealed glass melt is cooled, for example, to a third preset temperature, and the third preset temperature may be room temperature as required.

[0075] In an exemplary embodiment, the annealed molten glass is cooled for subsequent cutting.

[0076] Step 105, cutting the cooled glass, wherein the cutting direction is perpendicular to the tensioning direction of the metal wire matrix.

[0077] In an exemplary embodiment, the glass that has completed the cooling process is cut, and the cutting direction is perpendicular to the tensioning direction of the metal wire matrix.

[0078] In an exemplary embodiment, for example, the wire matrix in the mold is tensioned in the up-and-down direction, and horizontal cutting in the left-and-right direction is preferred during cutting.

[0079] In an exemplary embodiment, the cut glass is in a sheet-like state with multiple metal wire holes. According to needs, the thickness of the cut glass is preferably not less than 0.5 mm.

[0080] Step 106, placing the cut glass in a corrosion solution, the corrosion solution is used to corrode the metal wire matrix.

[0081] In an exemplary embodiment, the cut glass is placed in an etching solution, which is used to etch away the wire matrix.

[0082] In an exemplary embodiment, the etching solution includes hydrochloric acid solution and / or sulfuric acid solution and / or nitric acid solution.

[0083] In an exemplary embodiment, the concentration of hydrogen ions in the etching solution is 1-5 mol / L.

[0084] In an exemplary embodiment, the temperature of the etching solution is 30°C.

[0085] In an exemplary embodiment, the glass is preferably placed in the etching solution for no less than 2 hours.

[0086] In an exemplary embodiment, when etching the metal wire in the glass, an ultrasonic device may be used to oscillate the etching solution, thereby accelerating the etching of the metal wire.

[0087] In an exemplary embodiment, as needed, before placing the cut glass in the etching solution, the surface of the glass may be ground and polished, for example, the cut glass may be ground and polished to a mirror effect, and then the glass may be placed in the etching solution to etch away the metal wire.

[0088] In an exemplary embodiment, when polishing the glass, the degree of polishing can be determined according to the requirements of the final product on the glass surface.

[0089] In an exemplary embodiment, as required, the glass surface may be ground and polished after the etching is completed.

[0090] In an exemplary embodiment, after etching away the metal wire, the method further includes cleaning the glass.

[0091] In an exemplary embodiment, a drying step is further included after the cleaning is completed.

[0092] In an exemplary embodiment, when the step of polishing the glass surface is performed after etching away the metal wire, the steps of cleaning and drying are arranged to clean and dry the glass surface after polishing is completed.

[0093] Example 2

[0094] Embodiment 2 is a glass substrate. The glass substrate of the embodiment of the present application is processed by the TGV through-hole processing method of the above embodiment.

[0095] Although the embodiments disclosed in the present invention are as above, the contents are only embodiments adopted to facilitate understanding of the present invention and are not intended to limit the present invention. Any technician in the field to which the present invention belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in the present invention, but the patent protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A TGV through-hole processing method, characterized in that: include: Matching a mold according to the size data of the TGV through hole, wherein the mold includes a metal wire matrix matching the TGV through hole; Injecting molten glass into the mold, and controlling the temperature of the molten glass to be not lower than a first preset temperature; The melting point of the metal wires in the metal wire matrix is ​​greater than the first preset temperature; The first preset temperature is 1450°C-1750°C; Annealing the molten glass in the mold; Cooling the molten glass after annealing; Cutting the glass that has completed the cooling process, wherein the cutting direction is perpendicular to the tensioning direction of the metal wire matrix; The cut glass is placed in an etching solution, and the etching solution is used to etch away the metal wire matrix.

2. The TGV through-hole processing method according to claim 1, characterized in that: The metal wires of the metal wire matrix are tungsten wires, gold or platinum.

3. The TGV through-hole processing method according to claim 1, characterized in that: Before the step of annealing the glass in the mold, the method further comprises: The mold is evacuated and the vacuum degree is controlled to be 10-3Pa, and the evacuation time is not less than 1 hour.

4. The TGV through-hole processing method according to claim 1, characterized in that: The corrosion solution includes: hydrochloric acid solution and / or sulfuric acid solution and / or nitric acid solution.

5. The TGV through-hole processing method according to claim 4, characterized in that: The concentration of hydrogen ions in the corrosion solution is 1-5 mol / L.

6. The TGV through-hole processing method according to claim 5, characterized in that: The step of placing the cut glass in a corrosive solution further comprises: Controlling the temperature of the corrosion solution to 30°C; The glass is placed in the etching solution for no less than 2 hours.

7. The TGV through-hole processing method according to claim 6, characterized in that: The step of placing the cut glass in a corrosive solution further comprises: The etching solution is subjected to ultrasonic vibration.

8. The TGV through-hole processing method according to claim 1, characterized in that: Before the step of injecting the molten glass into the mold, the method further comprises: heating the mold to a second preset temperature; The second preset temperature is not less than 650°C.

9. The TGV through-hole processing method according to claim 1, characterized in that: Also includes: The glass after etching the metal wire matrix is ​​cleaned.

10. A glass substrate, characterized in that: The TGV through-hole processing method is manufactured by any one of claims 1 to 9.

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