A semiconductor laser element with a quantum confined Stark control layer

Abstract

The present invention discloses a semiconductor laser element with a quantum confined Stark control layer. The element comprises, from bottom to top, a substrate, a lower confining layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confining layer, with a quantum confined Stark control layer disposed between the active layer and the lower waveguide layer. The present invention regulates the electric field distribution in the active layer, inducing domain wall motion, suppressing the quantum confined Stark effect and InN phase separation in the active layer, improving interface quality, and reducing non-radiative recombination centers; enhancing optical field confinement and confinement factor, and increasing the optical power of the laser; the quantum confined Stark control layer generates a lattice displacement-induced phase transition, improving the mutual solubility gap between InN and GaN, suppressing InN segregation in the active layer and waveguide layer, reducing In component fluctuations, reducing thermal degradation, improving interface crystal quality and thermal stability, reducing non-radiative recombination centers, and increasing laser power and slope efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element provided with a quantum confined Stark control layer. Background Art

[0002] Lasers are widely used in laser displays, laser televisions, laser projectors, communications, medical treatment, weaponry, guidance, rangefinders, spectral analysis, cutting, precision welding, high-density optical storage, and other fields. There are many different types of lasers, classified in various ways, including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers offer advantages such as small size, high efficiency, light weight, excellent stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated emission of carriers, with a small spectral half-width and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, with the output power of a single light-emitting diode in the mW level. 2) The operating current density of lasers reaches KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) The light-emitting diode spontaneously radiates incoherent light from high energy level to low energy level without external influence, while the laser is stimulated transition radiation. The energy of the induced photon should be equal to the difference in energy levels of the electron transition, generating completely coherent light of the photon and the induced photon; 4) The principle is different: the light-emitting diode is under the action of external voltage, and the electron hole transitions to the quantum well or pn junction to generate radiation recombination and emit light, while the laser needs to meet the lasing conditions before it can be lased. The carrier inversion distribution in the active area must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor lasers have the following problems: 1. The lattice mismatch and large strain of the active layer induce a strong piezoelectric polarization effect, resulting in a strong QCSE quantum confined Stark effect, an increase in the valence band step difference of the laser, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain, which limits the improvement of the laser's electro-lasing gain; 2. The Mg acceptor activation energy of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, the holes overflow the active layer, and other problems. The hole injection is uneven and the efficiency is low, resulting in serious asymmetry and mismatch between electrons and holes in the quantum well, electron leakage and carrier desorption. Localization makes it more difficult for holes to transport in the quantum well, resulting in uneven carrier injection and gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in the slope efficiency; 3. The increase in the In component of the quantum well will produce In component fluctuations and strain, the laser gain spectrum becomes wider, and the peak gain decreases; the increase in the In component of the quantum well will cause poor thermal stability, and the growth of high-temperature p-type semiconductors and confinement layers will cause thermal degradation of the active layer, reducing the quality of the active layer and the interface quality; the internal defect density of the active layer is high, the mutual solubility gap between InN and GaN is large, InN phase separation and segregation, thermal degradation, and unsatisfactory crystal quality, resulting in unsatisfactory quantum well quality and interface quality, and an increase in non-radiative recombination centers. Summary of the Invention

[0005] The present invention provides a semiconductor laser element provided with a quantum confined Stark control layer, which solves the problems existing in the prior art.

[0006] The present invention provides a semiconductor laser element with a quantum confined Stark control layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. A quantum confined Stark control layer is provided between the active layer and the lower waveguide layer. The quantum confined Stark control layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ZrW2O8, ScF3, CoSe2, Fe3C, LaCu3Fe4O 12 , any one or any combination of Yb8Ge3Sb5.

[0007] Preferably, the electron affinity distribution of the quantum confined Stark control layer has the function y=A+B*x2 +C*e x Curve shape distribution, where A, B, and C are arbitrary values; the electron affinity of the quantum confined Stark control layer is ≤ the electron affinity of the lower waveguide layer ≤ the electron affinity of the active layer.

[0008] Preferably, the refractive index coefficient distribution of the quantum confined Stark control layer has a function y=D+E*x 2 +F*sinx curve shape distribution, where D, E, and F are arbitrary values; the refractive index of the quantum confined Stark control layer ≤ the refractive index of the lower waveguide layer ≤ the refractive index of the active layer.

[0009] Preferably, the elastic coefficient distribution of the quantum confined Stark control layer has the function y=G+H*e x The sinx curve shape distribution, wherein G and H are arbitrary values; the elastic coefficient of the active layer ≤ the elastic coefficient of the lower waveguide layer ≤ the elastic coefficient of the quantum confined Stark control layer.

[0010] Preferably, the spontaneous polarization coefficient distribution of the quantum confined Stark control layer has the function y=I+J*e x The shape of the cosx curve is distributed, where I and J are arbitrary values; the spontaneous polarization coefficient of the active layer is ≤ the spontaneous polarization coefficient of the lower waveguide layer ≤ the spontaneous polarization coefficient of the quantum confined Stark control layer.

[0011] Preferably, the In element distribution of the quantum confined Stark control layer has a function y=K+L*x 2 +e x Curve shape distribution, where K and L are arbitrary values; the In element concentration of the quantum confined Stark control layer ≤ the In element concentration of the lower waveguide layer ≤ the In element concentration of the active layer.

[0012] Preferably, the In / C element ratio distribution of the quantum confined Stark control layer has a function y=M+N*x 2 +V*e x Curve shape distribution, where M, N, and V are arbitrary values; the In / C element ratio of the quantum confined Stark control layer ≤ the In / C element ratio of the lower waveguide layer ≤ the In / C element ratio of the active layer.

[0013] Preferably, the In / H element ratio distribution of the quantum confined Stark control layer has a function y=R+P*x 2 +Q*e x Curve shape distribution; the In / H element ratio of the quantum confined Stark control layer ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer; the In / O element ratio distribution of the quantum confined Stark control layer has a function y=S+T*x2 +U*e x Curve shape distribution, where R, P, Q, S, T, and U are arbitrary values; the In / O element ratio of the quantum confined Stark control layer is ≤ the In / O element ratio of the lower waveguide layer ≤ the In / O element ratio of the active layer.

[0014] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3 ≥ m ≥ 1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or any combination thereof, with a thickness of 10 to 120 angstroms, and the barrier layer being any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0015] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0016] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN xComposite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0017] Compared with the prior art, the semiconductor laser element provided by the embodiment of the present invention with a quantum confined Stark control layer has the following beneficial effects: the quantum confined Stark control layer controls the electric field distribution of the active layer, induces domain wall motion, suppresses the quantum confined Stark effect and InN phase separation of the active layer, improves interface quality, and reduces non-radiative recombination centers; the quantum confined Stark control layer controls the light field distribution of the active layer, enhances light field confinement and confinement factor, and improves the optical power of the laser; the quantum confined Stark control layer generates a lattice displacement-induced phase transition, improves the mutual solubility gap between InN and GaN, suppresses InN segregation in the active layer and the waveguide layer, reduces In component fluctuations, reduces thermal degradation, improves interface crystal quality and thermal stability, reduces non-radiative recombination centers, and improves laser power and slope efficiency; the The quantum confined Stark control layer generates an iron-valley coupling effect to control the strain field and polarization direction reversal, modulates the piezoelectric polarization and spontaneous polarization field of the laser, reduces the quantum confined Stark effect, reduces the valence band order of the laser element, improves the uniformity of hole injection and the uniformity of laser gain, improves the overlap probability of the electron-hole wave function of the laser active layer, enhances the stimulated radiation of the laser element, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the peak gain of the laser element; the quantum confined Stark control layer controls the interface state through the In content and the C, H, and O element concentrations and distribution at the active layer interface, thereby controlling the polarization electric field and distribution of the quantum confined Stark control layer, reducing the hole injection barrier and electron overflow, improving the hole injection uniformity and electron-hole matching, and thus improving the slope efficiency and optical power of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic structural diagram of a semiconductor laser element provided by the present invention with a quantum confined Stark control layer.

[0019] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor laser element provided with a quantum confined Stark control layer provided by the present invention.

[0020] Indications in the figure: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: upper confinement layer, 106: quantum confined Stark control layer. DETAILED DESCRIPTION

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0022] In order to solve the above problems, a semiconductor laser element provided with a quantum confined Stark control layer provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0023] Reference Figure 1-2 The present invention provides a semiconductor laser element with a quantum confined Stark control layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A quantum confined Stark control layer 106 is provided between the active layer 103 and the lower waveguide layer 102. The quantum confined Stark control layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, I nAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ZrW2O8, ScF3, CoSe2, Fe3C, LaCu3Fe4O 12 , any one or any combination of Yb8Ge3Sb5.

[0024] The electron affinity distribution of the quantum confined Stark control layer 106 has the function y=A+B*x 2 +C*e x The curve shape distribution, where A, B, and C are arbitrary values; the electron affinity of the quantum confined Stark control layer 106 is ≤ the electron affinity of the lower waveguide layer 102 ≤ the electron affinity of the active layer 103, thereby controlling the electric field distribution of the active layer, inducing domain wall motion, suppressing the quantum confined Stark effect and InN phase separation in the active layer, improving the interface quality, and reducing non-radiative recombination centers.

[0025] The refractive index distribution of the quantum confined Stark control layer 106 has a function y=D+E*x 2+F*sinx curve shape distribution, where D, E, and F are arbitrary values; the refractive index of the quantum confined Stark control layer 106 is ≤ the refractive index of the lower waveguide layer 102 ≤ the refractive index of the active layer 103, thereby regulating the light field distribution of the active layer, enhancing the light field confinement and confinement factor, and improving the optical power of the laser.

[0026] The elastic coefficient distribution of the quantum confined Stark control layer 106 has the function y=G+H*e x The shape of the sinx curve is distributed, where G and H are arbitrary values; the elastic coefficient of the active layer 103 is ≤ the elastic coefficient of the lower waveguide layer 102 ≤ the elastic coefficient of the quantum confined Stark control layer 106, thereby generating a lattice displacement-induced phase transition, improving the mutual solubility gap between InN and GaN, suppressing InN segregation in the active layer and the waveguide layer, reducing In component fluctuations, reducing thermal degradation, improving interface crystal quality and thermal stability, reducing non-radiative recombination centers, and improving laser power and slope efficiency.

[0027] The spontaneous polarization coefficient distribution of the quantum confined Stark control layer 106 has the function y=I+J*e x The shape of the cosx curve is distributed, where I and J are arbitrary values; the spontaneous polarization coefficient of the active layer 103 is ≤ the spontaneous polarization coefficient of the lower waveguide layer 102 ≤ the spontaneous polarization coefficient of the quantum confined Stark control layer 106, thereby generating an iron-valley coupling effect to control the strain field and polarization direction reversal, modulate the piezoelectric polarization and spontaneous polarization field of the laser, reduce the quantum confined Stark effect, reduce the valence band order of the laser element, improve the uniformity of hole injection and the uniformity of laser gain, improve the overlap probability of the electron-hole wave function of the laser active layer, enhance the stimulated radiation of the laser element, reduce the excitation threshold of the laser element, enhance the confinement factor, and improve the peak gain of the laser element.

[0028] The In element distribution of the quantum confined Stark control layer 106 has a function y=K+L*x 2 +e x Curve shape distribution, where K and L are arbitrary values; the In element concentration of the quantum confined Stark control layer 106 ≤ the In element concentration of the lower waveguide layer 102 ≤ the In element concentration of the active layer 103. The In / C element ratio distribution of the quantum confined Stark control layer 106 has the function y=M+N*x 2 +V*e x Curve shape distribution, where M, N, and V are arbitrary values; the In / C element ratio of the quantum confined Stark control layer 106 ≤ the In / C element ratio of the lower waveguide layer 102 ≤ the In / C element ratio of the active layer 103. The In / H element ratio distribution of the quantum confined Stark control layer 106 has the function y=R+P*x 2 +Q*ex Curve shape distribution; the In / H element ratio of the quantum confined Stark control layer 106 ≤ the In / H element ratio of the lower waveguide layer 102 ≤ the In / H element ratio of the active layer 103; the In / O element ratio distribution of the quantum confined Stark control layer 106 has a function y=S+T*x 2 +U*e x Curve shape distribution, where R, P, Q, S, T, and U are arbitrary values; the In / O ratio of the quantum confined Stark control layer 106 is ≤ the In / O ratio of the lower waveguide layer 102 ≤ the In / O ratio of the active layer 103. By manipulating the interface states of the active layer through the In content and the concentrations and distribution of C, H, and O elements, the polarization electric field and distribution of the quantum confined Stark control layer are controlled, reducing the hole injection barrier and electron overflow, improving hole injection uniformity and electron-hole matching, and thereby increasing the slope efficiency and optical power of the laser.

[0029] The following table specifically shows a comparison of data between the conventional laser and the laser of the present invention.

[0030] Blue laser project Traditional lasers Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.47 84％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.64 -73％ Optical power (W) 5.2 14.2 173％ Limiting Factor 1.40％ 7.16％ 411％

[0031] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the period number is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0032] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0033] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0034] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser element provided with a quantum confined Stark control layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A quantum confined Stark control layer (106) is provided between the active layer (103) and the lower waveguide layer (102), and the quantum confined Stark control layer (106) is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ZrW2O8, ScF3, CoSe2, Fe3C, LaCu3Fe4O 12 , any combination of Yb8Ge3Sb5 containing In elements; The electron affinity energy distribution of the quantum confined Stark control layer (106) has the function y1=A+B*x 2 +C*e x Curve shape distribution, wherein A, B, and C are arbitrary values; the electron affinity of the quantum confined Stark control layer (106) is ≤ the electron affinity of the lower waveguide layer (102) ≤ the electron affinity of the active layer (103); The refractive index coefficient distribution of the quantum confined Stark control layer (106) has the function y2=D+E*x 2 +F*sinx curve shape distribution, wherein D, E, and F are arbitrary values; the refractive index of the quantum confined Stark control layer (106) is ≤ the refractive index of the lower waveguide layer (102) ≤ the refractive index of the active layer (103) The elastic coefficient distribution of the quantum confined Stark control layer (106) has the function y3=G+H*e x Sinx curve shape distribution, wherein G and H are arbitrary values; the elastic coefficient of the active layer (103) ≤ the elastic coefficient of the lower waveguide layer (102) ≤ the elastic coefficient of the quantum confined Stark control layer (106); The spontaneous polarization coefficient distribution of the quantum confined Stark control layer (106) has the function y4=I+J*e x The cosx curve shape distribution, wherein I and J are arbitrary values; the spontaneous polarization coefficient of the active layer (103) is ≤ the spontaneous polarization coefficient of the lower waveguide layer (102) ≤ the spontaneous polarization coefficient of the quantum confined Stark control layer (106).

2. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The In element distribution of the quantum confined Stark control layer (106) has a function y5=K+L*x 2 +e x Curve shape distribution, wherein K and L are arbitrary values; the In element concentration of the quantum confined Stark control layer (106) ≤ the In element concentration of the lower waveguide layer (102) ≤ the In element concentration of the active layer (103).

3. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The In / C element ratio distribution of the quantum confined Stark control layer (106) has a function y6=M+N*x 2 +V*e x Curve shape distribution, wherein M, N, and V are arbitrary values; the In / C element ratio of the quantum confined Stark control layer (106) is ≤ the In / C element ratio of the lower waveguide layer (102) ≤ the In / C element ratio of the active layer (103).

4. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The In / H element ratio distribution of the quantum confined Stark control layer (106) has a function y7=R+P*x 2 +Q*e x Curve shape distribution; the In / H element ratio of the quantum confined Stark control layer (106) is ≤ the In / H element ratio of the lower waveguide layer (102) ≤ the In / H element ratio of the active layer (103); the In / O element ratio distribution of the quantum confined Stark control layer (106) has a function y8=S+T*x 2 +U*e x Curve shape distribution, wherein R, P, Q, S, T, and U are arbitrary values; the In / O element ratio of the quantum confined Stark control layer (106) is ≤ the In / O element ratio of the lower waveguide layer (102) ≤ the In / O element ratio of the active layer (103).

5. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

6. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

7. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Composite substrate, sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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