Light-emitting module and display device

Abstract

The invention provides a light-emitting module and a display device. The light-emitting module comprises a back frame; a first substrate; the electronic element array is arranged on the first substrate, and the electronic element array comprises a plurality of electronic elements; the packaging layer is arranged on the first substrate and covers the electronic element, and the first substrate comprises a first substrate body; the light-emitting module further comprises a plurality of film layers located between the first substrate and the electronic element array. The plurality of film layers comprise a first conductive layer located on the first substrate and a second conductive layer located on the second substrate. And the first flat layer is positioned on one side, far away from the first substrate, of the first conductive layer.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting module and a display device. Background Art

[0002] Light Emitting Diode (LED) technology has been developed for nearly three decades, and its application scope has been continuously expanded. For example, it can be applied to the display field and used as a backlight source for display devices or as an LED display screen. With the development of technology, sub-millimeter light emitting diodes (Mini Light Emitting Diode, Mini LED for short) have gradually become a research hotspot in the field of display technology. For example, Mini LED can be used in the light-emitting module in a liquid crystal display device as a light-emitting element of the light-emitting module. In this way, by utilizing the advantages of Mini LED, the light-emitting module can achieve the advantages of thin thickness, zone dimming, fast response, simple structure and long life.

[0003] The above information disclosed in this section is only for understanding the background of the inventive concept of the present disclosure and therefore the above information may contain information that does not constitute the prior art. Summary of the invention

[0004] In order to solve at least one aspect of the above problems, embodiments of the present disclosure provide a light emitting module and a display device.

[0005] In one aspect, a light emitting module is provided, comprising:

[0006] Back frame;

[0007] a first substrate;

[0008] An electronic component array disposed on the first substrate, the electronic component array comprising a plurality of electronic components;

[0009] A packaging layer disposed on the first substrate and covering the electronic element, wherein the material of the first substrate is an organic material;

[0010] The light emitting module further comprises a plurality of film layers between the first substrate and the electronic element array, wherein the plurality of film layers comprises: a first conductive layer on the first substrate; and a first flat layer on a side of the first conductive layer away from the first substrate.

[0011] According to some exemplary embodiments, the light emitting module further includes a plurality of air release holes, the plurality of air release holes are located on a side of the first flat layer away from the first substrate, and the plurality of air release holes respectively expose a portion of the first flat layer.

[0012] According to some exemplary embodiments, the first substrate is directly connected to the back frame.

[0013] According to some exemplary embodiments, the light-emitting module further includes a bonding portion, wherein the bonding portion is disposed between the back frame and the first substrate, the bonding portion includes a first surface facing the back frame and a second surface facing the first substrate, the first surface and the second surface are disposed opposite to each other, the back frame is in direct contact with the first surface of the bonding portion, and the first substrate is in direct contact with the second surface of the bonding portion.

[0014] According to some exemplary embodiments, the encapsulation layer includes a flat upper surface.

[0015] According to some exemplary embodiments, the encapsulation layer includes a plurality of transparent protection structures having a curved upper surface.

[0016] According to some exemplary embodiments, the encapsulation layer includes a plurality of transparent protection structures having a curved upper surface and a groove.

[0017] According to some exemplary embodiments, the first conductive layer includes a metal stack; and / or,

[0018] The thickness of the first conductive layer is in the range of 1.5 micrometers to 7 micrometers.

[0019] According to some exemplary embodiments, the light-emitting module further includes a second conductive layer, which is located on a side of the first flat layer away from the first substrate, and the second conductive layer includes a metal stack, wherein the film layer material in the metal stack away from the first substrate includes an oxidation-resistant metal or alloy material.

[0020] According to some exemplary embodiments, the first conductive layer includes a stacked material of MoNb / Cu / MoNb or MoNiTi / Cu / MoNiTi; and / or,

[0021] The second conductive layer includes a stacked material of MoNb / Cu / CuNi.

[0022] In another aspect, a display device is provided, wherein the display device includes the light emitting module as described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Other objects and advantages of the present disclosure will be apparent from the following description of the present disclosure with reference to the accompanying drawings, and will help to have a comprehensive understanding of the present disclosure.

[0024] Figure 1 is a partial structural schematic diagram of a display device according to an embodiment of the present disclosure;

[0025] Figure 2 is a plan view of a light emitting module according to an embodiment of the present disclosure;

[0026] Figure 3 is a plan view of a light emitting unit according to some exemplary embodiments of the present disclosure;

[0027] Figure 4 The light emitting module according to the embodiment of the present disclosure is Figure 3 A schematic cross-sectional structure diagram taken along line AA';

[0028] Figure 5 According to other embodiments of the present disclosure, the light emitting module is Figure 3 A schematic cross-sectional structure diagram taken along line AA';

[0029] FIG. 6A to FIG. 6C They are schematic structural diagrams of transparent protection structures of light-emitting modules according to some exemplary embodiments of the present disclosure;

[0030] Figure 7 is a schematic structural diagram of a light-emitting module according to some other exemplary embodiments of the present disclosure;

[0031] Figure 8 is a flow chart of a method for manufacturing a light emitting module according to some exemplary embodiments of the present disclosure; and

[0032] Fig. 9 is a schematic diagram of a display device according to some exemplary embodiments of the present disclosure.

[0033] It should be noted that, for the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the sizes of layers, structures or regions may be enlarged or reduced, that is, these drawings are not drawn according to the actual scale. DETAILED DESCRIPTION

[0034] In the following description, for the purpose of explanation, many specific details are set forth to provide a comprehensive understanding of various exemplary embodiments. However, it is apparent that various exemplary embodiments may be implemented without these specific details or with one or more equivalent arrangements. In other cases, well-known structures and devices are shown in block diagram form to avoid making various exemplary embodiments unnecessarily obscure. In addition, various exemplary embodiments may be different, but not necessarily exclusive. For example, the specific shape, configuration, and characteristics of an exemplary embodiment may be used or implemented in another exemplary embodiment without departing from the inventive concept.

[0035] In the accompanying drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. Thus, the size and relative size of the individual elements are not necessarily limited to the size and relative size shown in the drawings. When the exemplary embodiments may be implemented differently, the specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described sequence. In addition, the same reference numerals represent the same elements.

[0036] When an element is described as being "on" another element, "connected to" another element or "coupled to" another element, the element may be directly on the other element, directly connected to the other element or directly coupled to the other element, or there may be an intermediate element. However, when an element is described as being "directly on" another element, "directly connected to" another element or "directly coupled to" another element, there is no intermediate element. Other terms and / or expressions used to describe the relationship between elements should be interpreted in a similar manner, for example, "between..." versus "directly between...", "adjacent" versus "directly adjacent" or "on..." versus "directly on...", etc. In addition, the term "connection" may refer to a physical connection, an electrical connection, a communication connection and / or a fluid connection. In addition, the X-axis, the Y-axis and the Z-axis are not limited to the three axes of a rectangular coordinate system, and may be interpreted in a broader sense. For example, the X-axis, the Y-axis and the Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z such as XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the listed associated items.

[0037] It should be understood that, although the terms first, second, etc. may be used herein to describe different elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the scope of the exemplary embodiment, a first element may be named a second element, and similarly, a second element may be named a first element.

[0038] In this article, inorganic light-emitting diodes refer to light-emitting elements made of inorganic materials, where LED refers to inorganic light-emitting elements that are different from OLEDs. Specifically, inorganic light-emitting elements may include sub-millimeter light-emitting diodes (Mini Light Emitting Diode, abbreviated as Mini LED in English) and micro light-emitting diodes (Micro Light Emitting Diode, abbreviated as Micro LED in English). Sub-millimeter light-emitting diodes (i.e. Mini LEDs) refer to small light-emitting diodes with a grain size between Micro LEDs and traditional LEDs. Typically, the grain size of Mini LEDs can be between 100 and 300 microns.

[0039] Herein, the electronic component may include a light emitting component, such as a sub-millimeter light emitting diode, a micro light emitting diode, etc. In addition, the electronic component may also include a sensor element or a micro integrated circuit chip, etc.

[0040] Some exemplary embodiments of the present disclosure provide a light-emitting module, a manufacturing method thereof, and a display device including the light-emitting module. For example, some embodiments of the present disclosure provide a light-emitting module, a manufacturing method thereof, and a display device. The light-emitting module includes: a back frame; a first substrate; a sub-millimeter light-emitting diode chip array disposed on the first substrate, the sub-millimeter light-emitting diode chip array including a plurality of sub-millimeter light-emitting diode chips; an encapsulation layer disposed on the first substrate and covering the sub-millimeter light-emitting diode chip array; and a bonding portion, the bonding portion is disposed between the back frame and the first substrate, the bonding portion includes a first surface facing the back frame and a second surface facing the first substrate, the first surface and the second surface are arranged oppositely, wherein the material of the first substrate includes an organic material; and the back frame is in direct contact with the first surface of the bonding portion, and the first substrate is in direct contact with the second surface of the bonding portion. In the embodiments of the present disclosure, a first substrate is provided as a substrate of a sub-millimeter light-emitting diode chip, and the first substrate is directly attached to the back frame, which is conducive to simplifying the structure of the light-emitting module and realizing the lightness and thinness of the light-emitting module.

[0041] Herein, for the convenience of description, a component formed by assembling a light emitting module and a display panel is referred to as a display device, that is, the expression "display device" includes a light emitting module, a display panel, and a frame combining the light emitting module and the display panel together.

[0042] Figure 1 is a partial structural diagram of a display device according to an embodiment of the present disclosure. For example, Figure 1 The display device shown in FIG. 1 may be a liquid crystal display device. Figure 1The display device 1 may include a light emitting module 2 , a display panel 4 such as a liquid crystal display panel, a back frame 5 and a plastic frame 6 .

[0043] It should be noted that in this article, the "back frame" has the characteristics of high strength and light weight. The material includes metal materials such as aluminum alloy, which plays a role in increasing the structural strength of the light-emitting module and supporting and protecting the light-emitting module; the "rubber frame" is a frame connected to the back frame and used to support components such as the display panel. The rubber frame is made of a soft and elastic material.

[0044] In the embodiment of the present disclosure, the light emitting module 2 may be a direct-down light emitting module. Figure 2 Schematic diagram of a light-emitting module according to an embodiment of the present disclosure. Figure 1 and Figure 2 The light-emitting module 2 may include a light-emitting substrate. For example, the light-emitting substrate may include a first substrate 11, a sub-millimeter light-emitting diode chip array 12 arranged on the first substrate 11, and an encapsulation layer 13 covering the sub-millimeter light-emitting diode chip array 12. For example, the material of the first substrate may include any one of polyimide, PEN resin or silicone resin. The encapsulation layer 13 includes a layered structure for encapsulating the sub-millimeter light-emitting diode chip array 12 on the first substrate 11. In some exemplary embodiments, an encapsulation glue is applied to the surface of the sub-millimeter light-emitting diode chip in the light-emitting substrate, and the encapsulation layer 13 is formed after drying. The material of the encapsulation glue may include a transparent light-curing or heat-curing resin, that is, the material of the encapsulation layer 13 may be a transparent protective glue. In some embodiments, the encapsulation layer 13 may include a plurality of transparent protective structures 30. The transparent protective structure will be described in more detail below in conjunction with the accompanying drawings.

[0045] It should be noted that Figure 1 and Figure 2 A rectangular frame is used to represent the sub-millimeter LED chip, but it can be understood that the cross-sectional shape of the sub-millimeter LED chip in the embodiment of the present disclosure is not limited to a rectangle, and can be any shape such as a circle, a polygon, etc.

[0046] The sub-millimeter LED chip array 12 may include a plurality of sub-millimeter LED chips 121, which are arranged in an array along the first direction X and the second direction Y. Each sub-millimeter LED chip 121 is in electrical communication with the first substrate 11. The first substrate 11 is provided with pads corresponding to the sub-millimeter LED chips, and the sub-millimeter LED chips are fixedly connected to the corresponding pads, thereby forming a sub-millimeter LED chip array 12 on the first substrate 11. It should be understood that the density of the sub-millimeter LED chip array 12 depends on the luminous efficiency power of the sub-millimeter LED chip, the power consumption requirement of the light-emitting substrate, and the brightness requirement.

[0047] For example, the first direction X and the second direction Y are perpendicular to each other, and the third direction Z is perpendicular to the first direction X and the second direction Y.

[0048] In the embodiments of the present disclosure, sub-millimeter light-emitting diode chips are applied to the light-emitting module, which is conducive to realizing a more sophisticated local dimming design of the light-emitting module, realizing high dynamic contrast, and realizing regional dimming, so that the light-emitting module has the advantages of better light transmittance uniformity, higher contrast, and more light and dark details.

[0049] In some exemplary embodiments of the present disclosure, the material of the first substrate 11 may include polyimide (PI), and the thickness of the first substrate is in the range of 5-10 μm.

[0050] For example, the first substrate 11 may be directly connected to the inner surface of the back frame 5. Figure 1 As shown, the light emitting module 2 may include a bonding part 3, for example, the bonding part 3 may include a double-sided adhesive tape. The first substrate 11 and the back frame 5 are respectively located on both sides of the bonding part 3 and contact the upper surface and the lower surface of the bonding part 3 respectively.

[0051] In the embodiments of the present disclosure, a first substrate with a smaller thickness is used as the substrate of the light-emitting base plate, which is beneficial to reducing the overall thickness of the light-emitting module. Furthermore, the first substrate is directly connected to the back frame without any back film in the middle, which is beneficial to further reduce the overall thickness of the light-emitting module. "Back film" refers to a high-viscosity film used to enhance the mechanical strength, flatness and supporting capacity of the substrate material layer provided with sub-millimeter light-emitting diodes. For example, the "back film" may include a PET film or a multilayer film structure including a PSA film and a PET film, and the thickness of the back film is about 100μm. In the embodiments of the present disclosure, there is no need to set a back film, and the first substrate directly contacts the back frame, thereby reducing the overall thickness of the light-emitting module.

[0052] When the material of the first substrate 11 is polyimide, the thermal conductivity of polyimide is 0.1-0.35W / m·K. The back frame 5 comprises an iron material, and its thermal conductivity is about 150W / m·K. Since the thickness of the first substrate 11 is relatively small, for example, about 5-10μm, and the first substrate 11 directly contacts the iron back frame 5, the heat transfer efficiency between the first substrate 11 and the back frame 5 can be greatly improved, which is conducive to the effective dissipation of the heat generated in the light-emitting module through the back frame 5. Figure 1 The light emitting module 2 may further include an optical film set. For example, the optical film set may include optical films such as a diffusion plate 23 and a brightness enhancement film 24. It should be understood that the optical film set may also include other types of optical films, and the type of optical films included in the optical film set may be selected according to actual use requirements.

[0053] Reference Figure 1 For example, the display panel 4 of the liquid crystal display panel may include two substrates arranged opposite to each other, for example, the two substrates may be an array substrate 41 and a color filter substrate 42. It should be understood that the display panel 4 may also include a liquid crystal layer arranged between the array substrate 41 and the color filter substrate 42. The substrates of the array substrate 41 and the color filter substrate 42 may be glass. In addition, it should be noted that the array substrate and the color filter substrate may adopt the structures of the array substrate and the color filter substrate commonly used in the art, which will not be described in detail here.

[0054] The display panel 4 may include, for example, a lower polarizer 43 and an upper polarizer 45. Figure 1 In the illustrated embodiment, the lower polarizer 43 is disposed on the lower surface of the array substrate 41 , and the upper polarizer 45 is disposed on the upper surface of the color filter substrate 42 .

[0055] For example, in the embodiment of the present disclosure, the array substrate 41 may include a second substrate 412, and the thickness of the second substrate 412 may be about 0.15 mm. The material of the second substrate 412 is glass, quartz, etc.

[0056] Reference Figure 1 , the back frame 5 has a receiving space 52 for receiving the light-emitting module 2. The plastic frame 6 is used to carry the display panel 4. For example, a buffer element 7, such as foam, is provided between the bearing surface of the plastic frame 6 and the lower polarizer 43 of the display panel 4. A portion of the plastic frame 6 can overlap with the back frame 5. The back frame 5 can have a side wall. The side wall of the plastic frame 6 is connected to the side wall of the back frame 5 by means of a snap connection, a threaded connection, etc. For example, in Figure 1 In the illustrated embodiment, the plastic frame 6 includes a buckle 61 , through which the plastic frame 6 and the back frame 5 can be fixed together.

[0057] For example, the light-emitting module may further include a color conversion layer 8. For example, the sub-millimeter light-emitting diode chip 121 may be a sub-millimeter light-emitting diode chip that emits blue light. The color conversion layer 8 may convert the blue light emitted by the sub-millimeter light-emitting diode chip 121 into light of different colors such as red, green, and white. For example, the color conversion layer 8 may be located above the diffuser 23. Alternatively, the color conversion layer 8 may be located below the diffuser 23. The embodiments of the present disclosure do not impose any particular limitation on this.

[0058] In the embodiments of the present disclosure, the color conversion layer 8 may be a quantum dot layer, or a KSF phosphor layer. When the color conversion layer 8 is a quantum dot layer, due to the small particle size of the quantum dots, the film thickness must reach a certain range, such as 0.1 to 0.2 mm, to ensure light conversion efficiency. When the color conversion layer 8 is a phosphor layer, the particle size of the phosphor is relatively large. To achieve the same light conversion efficiency, the thickness of the phosphor layer may be less than that of the quantum dot layer, for example, the thickness may be reduced by about 50 μm. It is understandable that in order to achieve a smaller light-emitting module thickness, a phosphor layer may be selected as a color conversion layer, and if a higher color purity is desired, a quantum dot layer may be selected as a color conversion layer.

[0059] Continue to refer to Figure 1 and Figure 7 , the optical film group is arranged on the light-emitting side of the light-emitting substrate. For displays of about 25 inches or above, in order to fully mix the light emitted from the sub-millimeter light-emitting diode chip array 12 to achieve uniform light emission, which is conducive to achieving display uniformity, an optical distance OD needs to be set between the light-emitting substrate and the optical film group 2, so the light-emitting module also includes a support structure S to ensure the optical distance OD between the light-emitting substrate and the optical film group 2. For displays of 25 inches or below, the optical distance OD may not be set, that is, the light-emitting substrate and the optical film group 2 are directly in contact, so the light-emitting module may not include the support structure S.

[0060] It should be noted that in Figure 1 In the figure, the diffuser 23 and the brightness enhancement film 24 are schematically shown, but the optical film set in the embodiment of the present disclosure may also include other types of optical films. In addition, each of the diffuser 23 and the brightness enhancement film 24 may include a single film or multiple films.

[0061] There is a certain spacing distance GAP between the optical film group and the display panel 4, that is, there is no direct contact between the two. For example, a cavity structure can make the light emitted from the optical film group evenly enter the display panel 4, which is conducive to achieving display uniformity.

[0062] In the embodiment of the present disclosure, the distribution density of the sub-millimeter LED chips 12 can be increased to reduce the optical distance OD and the gap GAP, thereby further reducing the overall thickness of the light-emitting module. The distribution density of the sub-millimeter LED chips 121 can be greater than or equal to 6 / 36mm 2 That is, greater than or equal to 1 / 6mm 2 For example, in some examples, the distribution density of sub-millimeter light-emitting diode chips 121 may be: 6-8 chips / 36mm 2 By setting the distribution density of sub-millimeter light-emitting diode chips, the overall thickness of the light-emitting module can be reduced by 0.4mm. For example, for displays of 25 inches or less in size, when the distribution density of the sub-millimeter light-emitting diode chip array 12 is increased, the optical distance OD may not be set, that is, the light-emitting substrate is directly in contact with the optical film group 2, so the light-emitting module may not include the supporting structure S; in the above case, the overall thickness of the light-emitting module can be within 2mm, thereby realizing an ultra-thin light-emitting module. It should be noted that the "overall thickness of the light-emitting module" here can be the sum of the overall thickness of the light-emitting substrate and the overall thickness of the optical film group 2.

[0063] It is understandable that, since the first substrate of the light-emitting module may include different types of electronic components, the distribution density of the electronic components mentioned in the embodiment of the present disclosure refers to the distribution density of the electronic components of the same type that are the largest in number in the light-emitting module. For example, the first substrate of the light-emitting module includes three types of electronic components: sub-millimeter light-emitting diode chips, micro integrated circuit chips, and temperature sensors. Among them, the number of sub-millimeter light-emitting diode chips is the largest. Then, the distribution density of sub-millimeter light-emitting diode chips 12 on the first substrate can be greater than or equal to 1 / 6mm 2 .

[0064] For example, when the distribution density of sub-millimeter LED chips 121 increases, the thickness of the optical film in the optical film group, for example, the thickness of the diffuser 23, can be reduced, thereby further reducing the overall thickness of the light-emitting module and, accordingly, reducing the overall weight of the light-emitting module.

[0065] In some embodiments, the light emitting surface of the sub-millimeter LED chip 121 may have four sides of equal length (i.e., the light emitting surface of the sub-millimeter LED chip 121 is a square), or the light emitting surface of the sub-millimeter LED chip 121 may have sides of different lengths (e.g., a non-square rectangular shape). The present disclosure takes the light emitting surface of the sub-millimeter LED chip 121 as an example for explanation. Figure 2 shown.

[0066] In some embodiments, a light-emitting unit includes only one sub-millimeter light-emitting diode chip 121; in other embodiments, a light-emitting unit may also include multiple sub-millimeter light-emitting diode chips 121, for example, two or more sub-millimeter light-emitting diode chips 121, which is not specifically limited here. In some embodiments, the multiple sub-millimeter light-emitting diode chips 121 included in a light-emitting unit may be connected in series, in parallel, or in a combination of series and parallel, which is not specifically limited.

[0067] Figure 3 It is a plan view of a light-emitting unit according to some exemplary embodiments of the present disclosure, which schematically shows that a light-emitting unit includes four sub-millimeter light-emitting diode chips 121 arranged in series. For example, the micro-integrated circuit μIC can provide signals to four sub-millimeter light-emitting diode chips 121 in a light-emitting unit. In some embodiments, a micro-integrated circuit μIC can also provide signals to multiple light-emitting units. On the light-emitting substrate including the micro-integrated circuit μIC, a transparent protective structure 30 is provided on the side of the sub-millimeter light-emitting diode chip 121 away from the light-emitting substrate. The transparent protective structure 30 can protect the wrapped micro-integrated circuit uIC. In addition, in order to facilitate production, the transparent protective structure 30 above the micro-integrated circuit uIC and the transparent protective structure 30 above the sub-millimeter light-emitting diode chip 121 have the same production requirements, and the two are prepared and formed in the same process flow.

[0068] It can be understood that in the embodiments of the present disclosure, the light-emitting substrate of the light-emitting module includes a light-emitting area and a peripheral area. Among them, all sub-millimeter light-emitting diode chips 121 and micro-integrated circuits μIC are arranged in the light-emitting area, and the sub-millimeter light-emitting diode chips 121 and micro-integrated circuits μIC are electrically connected to the corresponding pads on the light-emitting substrate through a series of processes such as picking up, transferring, and fixing. The peripheral area is used to connect to an external driving circuit, such as a flexible printed circuit board (FPC) or a printed circuit board (PCB). For example, a binding pad 107 can be set in the peripheral area to be electrically connected to the gold finger structure on the circuit board.

[0069] Figure 4 The light emitting module according to the embodiment of the present disclosure is Figure 3 The cross-sectional structure diagram taken along the line AA' in FIG. Figures 2 to 4 The sub-millimeter light-emitting diode chip 121 includes a light-emitting portion 203 and two pins 201 and 202 (N pad and P pad, respectively), which are connected to the pads 101 through solder paste T, and each pad 101 is connected according to the position of the sub-millimeter light-emitting diode chip 121 in the electrical circuit. Specifically, Figure 3In the figure, the P pad of the sub-millimeter LED chip 121 in the lower left corner is connected to the driving voltage line VLED, the N pad of the sub-millimeter LED chip 121 in the lower left corner is connected to the P pad of the sub-millimeter LED chip 121 in the upper left corner, the N pad of the sub-millimeter LED chip 121 in the upper left corner is connected to the Ppad of the sub-millimeter LED chip 121 in the upper right corner, the N pad of the sub-millimeter LED chip 121 in the upper right corner is connected to the P pad of the sub-millimeter LED chip 121 in the lower right corner, and the N pad of the sub-millimeter LED chip 121 in the lower right corner is connected to the output end of the micro-integrated circuit μIC. In some embodiments, the micro-integrated circuit μIC may have multiple pins, for example, 4 pins, which are respectively connected to the pads on the light-emitting substrate through solder paste, and each pad is respectively connected to the source power line PWR, the common voltage line GND, the address line DI, and the sub-millimeter LED chip 121 in the corresponding light-emitting unit.

[0070] In some embodiments, reference Figures 2 to 4 The light-emitting module may further include: a first conductive layer 102, which is generally used to arrange various signal lines, such as a common voltage line GND, a driving voltage line VLED, a source power line PWR, an address line DI, etc. Optionally, the thickness of the first conductive layer 102 is about 1.5 μm-7 μm, and its material may include copper, for example, a stacked material such as MoNb / Cu / MoNb may be formed by sputtering, and the material on one side of the stacked layer close to the substrate 11 is MoNb, and the thickness is about The material of the middle layer of the laminate is Cu, which is the preferred material for the electrical signal transmission channel. The material on the side away from the first substrate 11 is MoNb, with a thickness of about It can be used to protect the middle layer and prevent the surface of the middle layer with low resistivity from being exposed and oxidized. Since the thickness of a single sputtering generally does not exceed 1 μm, multiple sputterings are required to form the first conductive layer 102 exceeding 1 μm. In addition, the first conductive layer 102 can also be formed by electroplating. Specifically, a seed layer can be formed using MoNiTi to increase the nucleation density of metal grains in the subsequent electroplating process, and then copper with low resistivity is produced by electroplating, and then an anti-oxidation layer is produced. The material can be MoNiTi. Optionally, the surface of the first conductive layer 102 away from the first substrate 11 can be covered by a first insulating layer 104 to ensure the reliability and stability of the electrical path.

[0071] In some embodiments, reference Figures 2 to 4The light emitting module may further include: a second conductive layer 105, which is usually used to set a pad and a connecting lead 106. Optionally, the film thickness of the second conductive layer 105 is about The pads are used to bind various electrical components, for example, the pads 101 located in the light-emitting area for mounting the sub-millimeter light-emitting diode chip 121, and / or pads for mounting functional components such as micro integrated circuit chips or sensors, and the bonding pads 107 located in the peripheral area for connecting to the circuit board. The surface of the pad away from the first substrate 11 needs to be partially exposed before being connected to the electronic component. In order to prevent the problem of oxidation of the pads exposed to the air during the process from substrate manufacturing to placing the electronic components on the substrate, an anti-oxidation material layer can be set only on the surface area where the pads are exposed, that is, the surface of the pad area will have one more layer of structure than the area where the connecting lead 106 is located; or the second conductive layer 105 is set as a laminated structure of at least two layers, and the film material away from the first substrate 11 is an anti-oxidation metal or alloy material, specifically, it can be composed of a laminated structure such as MoNb / Cu / CuNi, the bottom layer material MoNb in the laminate is mainly used to improve adhesion, the middle layer Cu in the laminate is mainly used to transmit electrical signals due to its low resistivity, and the top layer CuNi in the laminate can prevent the middle layer from oxidizing and ensure the firmness of the connection with the electronic components. The connecting lead 106 can include a first lead extending along the first direction X and a second lead extending along the second direction Y, and the surface of the first lead and the second lead away from the first substrate 11 will be covered by the second insulating layer 108 to ensure the reliability and stability of the electrical path.

[0072] In some embodiments, Figure 4 As shown, the light-emitting module may further include: a buffer layer 109 located between the first substrate 11 and the first conductive layer 102, a first flat layer 110 located between the first insulating layer 117 and the second conductive layer 105, a second flat layer 111 and a reflective layer 112 located sequentially on the side of the second insulating layer away from the second conductive layer 105, a transparent electrode 113 located on the bonding pad 107 in the peripheral area, and an anisotropic conductive adhesive 114 located between the transparent electrode 113 and the flexible circuit board FPC. Among them, the buffer layer 109 can prevent the influence of impurities in the first substrate 11 on the conductive performance of the first conductive layer 102, the first flat layer 110 can provide a flat surface for the production of the second conductive layer 104, the second flat layer 110 can provide a flat surface for the subsequent bonding of the sub-millimeter light-emitting diode chip 121, the material of the reflective layer 112 can be white ink, which is used to improve the reflectivity of the light-emitting substrate 01 to reduce light loss, and the transparent electrode 113 and the anisotropic conductive adhesive 114 are used to realize the electrical connection between the bonding pad 107 in the peripheral area and the flexible circuit board FPC.

[0073] Figure 5 According to other embodiments of the present disclosure, the light emitting module is Figure 3 The cross-sectional structure diagram taken along the line AA' in FIG. 1 is a schematic diagram showing the film structure on the light-emitting substrate. The sub-millimeter light-emitting diode chip is Figure 5 Not shown in the figure. Figure 5 As shown, the light-emitting substrate of the light-emitting module may include: a first substrate 11; a buffer layer 109 located on the first substrate 11; a first conductive layer 102 located on a side of the buffer layer 109 away from the first substrate 11; a first insulating layer 117 located on a side of the first conductive layer 102 away from the first substrate 11; a first flat layer 110 located on a side of the first insulating layer 117 away from the first substrate 11; a second conductive layer 105 located on a side of the first flat layer 110 away from the first substrate 11; a second insulating layer 116 located on a side of the second conductive layer 105 away from the first substrate 11; and a second flat layer 111 located on a side of the second insulating layer 116 away from the first substrate 11.

[0074] like Figure 5 As shown, the second insulating layer 116 is located between the first flat layer 110 and the second flat layer 111. In the case where the material of the second flat layer 111 is an organic insulating material, a plurality of air release holes 1160 may be provided in the second insulating layer 116. The plurality of air release holes 1160 respectively expose a portion of the first flat layer 110 located therebelow. In the process of manufacturing the light-emitting substrate, the gas accumulated in the first flat layer 110 may be released through the air release holes 1160, thereby preventing the film layer of the light-emitting substrate from warping, peeling, and other problems, thereby improving the product yield.

[0075] For example, in Figure 5 In the illustrated embodiment, a plurality of venting holes 1160 are provided, but this is merely illustrative and not limiting of the embodiments of the present disclosure. In other embodiments, a greater number or a lesser number of venting holes may be provided.

[0076] FIG. 6A to FIG. 6C They are schematic diagrams of the structure of the encapsulation layer 13 of the light-emitting module according to some exemplary embodiments of the present disclosure. Fig. 6A The sub-millimeter light-emitting diode chip encapsulation layer 13 may have a flat upper surface 31, and the encapsulation layer may cover all of the sub-millimeter light-emitting diode chips 121. For example, the refractive index of the encapsulation layer 13 may be between 1.2 and 1.5, between 1.3 and 1.4, less than 1.4, less than 1.5, greater than 1.1, greater than 1.2, greater than 1.3, about 1.35, etc. Figure 6B, the encapsulation layer 13 includes a plurality of transparent protective structures 30, each of which may have a curved upper surface 32 (e.g., a convex upper surface). The transparent protective structure 30 may form a dome shape above the sub-millimeter light-emitting diode chip. In this embodiment, the transparent protective structure may be referred to as a droplet lens. For example, the refractive index of the transparent protective structure 30 may be between 1.2 and 1.5, between 1.3 and 1.4, less than 1.4, less than 1.5, greater than 1.1, greater than 1.2, greater than 1.3, approximately 1.35, and the like. Each sub-millimeter light-emitting diode chip may have a corresponding transparent protective structure portion. For example, in order to reduce the probability of the outgoing light of the sub-millimeter light-emitting diode chip 121 being totally reflected at the interface between the transparent protective structure 30 and the air, the refractive index of the transparent protective structure 30 may be between the refractive index of the sub-millimeter light-emitting diode chip 121 and the refractive index of the air.

[0077] Reference Figure 6C The transparent protective structure 30 may have a curved upper surface 33 and a groove 34. The transparent protective structure 30 forms a groove 34 on the sub-millimeter light-emitting diode chip. The groove 34 may have any desired shape (eg, a pyramid shape). Fig. 6A Compared with the embodiment of the present invention, the light output uniformity can be further improved.

[0078] Figure 7 Schematic diagram of the structure of the light emitting module according to some other exemplary embodiments of the present disclosure. Figure 7 Relative to Figure 1 The structural differences Figure 7 For parts not described below, refer to Figure 1 The description of the structure is not repeated here. Figure 7, the light-emitting module may also include adhesive tapes 80 and 81 for bonding the light-emitting module and the display panel together. The adhesive tape 81 is located in the area where the adhesive frame 6 and the display panel 4 contact. Since the adhesive frame is a frame-shaped structure, the projection of the adhesive tape 81 on the plane where the display panel 4 is located is also in the shape of a square, that is, it is arranged around the peripheral area of ​​the display panel. The adhesive tape 80 is attached to the edge of the upper surface of the display device, the side surface of the display device, and the edge of the lower surface of the display device. Specifically, the adhesive tape 80 may include a first part 801, a second part 802, and a third part 803. The first part 801 of the adhesive tape 80 is attached to the edge of the surface of the back frame 5 away from the display panel, the second part 802 of the adhesive tape 80 is attached to the side wall of the back frame 5, and the third part 803 of the adhesive tape 80 is attached to the edge of the surface of the back frame 5 away from the light-emitting module. The adhesive tape 80 is a continuously extending adhesive tape, that is, the first part 801, the second part 802, and the third part 803 of the adhesive tape 80 are connected as a whole. Through the above arrangement, the adhesive tape 80 can fix the display panel, thereby attaching the light emitting module and the display panel together.

[0079] Optionally, the tape 80 may be made of a light-shielding material, for example, the tape 80 may be a black tape. The tape 80 is attached to the edge of the lower surface of the display device, the side wall of the display device, and the edge of the upper surface of the display device, and can block the light in the entire non-display area of ​​the display device, thereby reducing or even avoiding the probability of light leakage of the display device. Optionally, the tape 80 may be made of a conductive material, so that the tape 80 can play a role in electrostatic discharge or electrostatic shielding.

[0080] Figure 8 is a flow chart of a method for manufacturing a light emitting module according to some exemplary embodiments of the present disclosure. Figure 8 , the manufacturing method of the light emitting module may include the following steps.

[0081] In step S301, any one of polyimide material, PEN resin material or silicone resin is coated on a rigid carrier to form a first substrate. The material of the rigid carrier may be glass, quartz or the like.

[0082] In step S302, a sub-millimeter LED chip array and a packaging layer covering the sub-millimeter LED chip array are formed on a first substrate, wherein the sub-millimeter LED chip array includes a plurality of sub-millimeter LED chips.

[0083] In step S303, the first substrate is peeled off from the rigid carrier.

[0084] In step S304, a bonding portion is formed on the back frame.

[0085] In step S305, the peeled first substrate is directly attached to the back frame through an adhesive portion, wherein the adhesive portion includes a first surface facing the back frame and a second surface facing the first substrate, the first surface and the second surface are arranged opposite to each other, the back frame is in direct contact with the first surface of the adhesive portion, and the first substrate is in direct contact with the second surface of the adhesive portion.

[0086] Illustratively, according to some embodiments of the present disclosure, the method for manufacturing the light-emitting module may be specifically performed according to the following steps.

[0087] In step S401 , any one of polyimide material, PEN resin material or silicone resin is coated on a rigid carrier and cured to form a first substrate.

[0088] In step S402, a buffer layer such as silicon nitride is deposited on the first substrate. For example, the thickness of the silicon nitride is 1000-10000 angstroms. On the one hand, the buffer layer can be used as a stress buffer layer to adjust the stress inside the first substrate, which is beneficial to the subsequent formation of a conductive layer pattern; on the other hand, in step S401, the first substrate is usually formed by a wet process, in which oxygen-containing components are introduced. By forming the buffer layer on the first substrate, the oxygen-containing components can be isolated from the conductive layer pattern to prevent the oxygen-containing components from corroding the conductive layer pattern formed subsequently, thereby protecting the conductive layer pattern formed subsequently.

[0089] In step S403, a thick copper layer is formed on the buffer layer, and a thick copper pattern is produced by patterning. For example, the thickness of the thick copper layer is greater than 2 micrometers.

[0090] In step S404, an insulating layer such as silicon nitride is deposited on the thick copper layer and patterned by a composition process to form a first via hole exposing at least a portion of the thick copper layer.

[0091] In step S405 , a pad layer is deposited on the insulating layer, and the pad layer is electrically connected to the thick copper layer through the via hole.

[0092] In step S406, a protective layer is deposited and patterned by a composition process to form a second via hole, wherein the second via hole exposes at least a portion of the pad layer. For example, the protective layer includes silicon nitride, silicon oxide, or any combination thereof.

[0093] In step S407, a white oil layer is formed by printing to expose the second via hole. It should be noted that white oil has good light reflectivity and can improve the light output brightness and efficiency of the sub-millimeter light emitting diode chip.

[0094] In step S408, a plurality of sub-millimeter light emitting diode chips are fixedly connected to their corresponding pads respectively.

[0095] In step S409, a transparent silicone material is coated on the plurality of sub-millimeter light-emitting diode chips and cured to form a packaging layer.

[0096] In step S410, a low-viscosity protective film is attached to the silicone. The low-viscosity protective film may be a TPF film, which protects the light-emitting substrate from collision and wear to ensure that after the attachment is completed, the low-viscosity protective film is connected to the silicone layer through van der Waals force.

[0097] In step S411, the first substrate is separated from the rigid carrier by, for example, a laser lift-off process. During this process, the low-viscosity protective film can prevent the first substrate from bending or curling after being removed from the rigid carrier.

[0098] In step S412, a high-viscosity double-sided adhesive is applied to the back frame, and then the separated first substrate is directly attached to the back frame.

[0099] In step S413, the low-viscosity protective film is peeled off.

[0100] It should be noted that some steps of the above manufacturing method can be performed individually or in combination, and can be performed in parallel or sequentially, and are not limited to the specific operation sequence shown in the figure.

[0101] Some exemplary embodiments of the present disclosure also provide a display device. Fig. 9 is a schematic diagram of a display device according to some exemplary embodiments of the present disclosure. Fig. 9 , the display device includes the above-mentioned light-emitting module.

[0102] The display device may be any product or component having a display function, for example, a smart phone, a portable phone, a navigation device, a television (TV), a car audio system, a laptop computer, a tablet computer, a portable multimedia player (PMP), a personal digital assistant (PDA), etc.

[0103] It should be understood that the display device according to some exemplary embodiments of the present disclosure has all the characteristics and advantages of the above-mentioned light-emitting module, and these characteristics and advantages can be referred to the above description of the light-emitting substrate, which will not be repeated here.

[0104] As used herein, the terms "substantially," "approximately," "approximately," and other similar terms are used as terms of approximation rather than as terms of degree, and they are intended to account for the inherent deviations in measured or calculated values ​​that would be recognized by one of ordinary skill in the art. Taking into account factors such as process fluctuations, measurement problems, and errors associated with the measurement of a particular quantity (i.e., limitations of the measurement system), "approximately" or "approximately" as used herein include the stated value and mean that the particular value is within an acceptable range of deviation as determined by one of ordinary skill in the art. For example, "approximately" can mean within one or more standard deviations, or within ±10% or ±5% of the stated value.

[0105] Although some embodiments according to the general inventive concept of the present disclosure have been illustrated and described, it will be appreciated by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the general inventive concept of the present disclosure, the scope of which is defined by the claims and their equivalents.

Claims

1. A light-emitting module, comprising: Back frame; a first substrate; An electronic component array disposed on the first substrate, the electronic component array comprising a plurality of electronic components; A packaging layer disposed on the first substrate and covering the electronic element, wherein the material of the first substrate is an organic material; The light emitting module further comprises a plurality of film layers between the first substrate and the electronic element array, wherein the plurality of film layers comprises: a first conductive layer on the first substrate; and a first flat layer on a side of the first conductive layer away from the first substrate.

2. The light emitting module according to claim 1, wherein: The light emitting module further includes a plurality of air release holes, wherein the plurality of air release holes are located on a side of the first flat layer away from the first substrate, and the plurality of air release holes respectively expose a portion of the first flat layer.

3. The light emitting module according to claim 1 or 2, wherein: The first substrate is directly connected to the back frame.

4. The light emitting module according to claim 1 or 2, wherein: The light-emitting module also has a bonding portion, which is arranged between the back frame and the first substrate. The bonding portion includes a first surface facing the back frame and a second surface facing the first substrate. The first surface and the second surface are arranged opposite to each other. The back frame is in direct contact with the first surface of the bonding portion, and the first substrate is in direct contact with the second surface of the bonding portion.

5. The light emitting module according to claim 1 or 2, wherein: The encapsulation layer includes a flat upper surface.

6. The light emitting module according to claim 1 or 2, wherein: The encapsulation layer includes a plurality of transparent protection structures having a curved upper surface.

7. The light emitting module according to claim 1 or 2, wherein: The encapsulation layer includes a plurality of transparent protection structures having a curved upper surface and a groove.

8. The light emitting module according to claim 1 or 2, wherein: The first conductive layer comprises a metal stack; and / or, The thickness of the first conductive layer is in the range of 1.5 micrometers to 7 micrometers.

9. The light emitting module according to claim 1 or 2, wherein: The light emitting module further includes a second conductive layer, which is located on a side of the first flat layer away from the first substrate. The second conductive layer includes a metal stack, and a film layer material in the metal stack away from the first substrate includes an oxidation-resistant metal or alloy material.

10. The light emitting module according to claim 9, wherein: The first conductive layer comprises a stacked material of MoNb / Cu / MoNb or MoNiTi / Cu / MoNiTi; and / or, The second conductive layer includes a stacked material of MoNb / Cu / CuNi.

11. A display device, wherein: The display device comprises the light emitting module according to any one of claims 1 to 10.

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