Manufacturing method and manufacturing mold for vacuum gate valve of semiconductor equipment

Abstract

The invention relates to the field of semiconductors, and discloses a manufacturing method and a manufacturing mould for a vacuum gate valve of semiconductor equipment, and the manufacturing method for the vacuum gate valve of the semiconductor equipment comprises the following steps: providing a gate valve metal substrate to shield a groove position of the gate valve metal substrate; executing a preset machining process on the gate valve metal substrate; providing a metal upper die to form a forming cavity die of the gate valve rubber sealing ring; providing a metal middle die to form a fixed cavity die of the gate valve metal substrate, wherein a deformable buffer part is formed in the fixed cavity die; providing a metal lower mold to form a structure for supporting the metal middle mold and the metal upper mold; a metal middle mold is arranged on the metal lower mold, and a deformable buffer part is arranged on the periphery of the metal substrate and then placed in a fixed cavity mold of the metal middle mold; adding a specified sizing material on the metal substrate; covering a metal upper mold for vulcanization molding; and removing the mold to obtain the vacuum gate valve. The technical problem that the metal substrate cannot be anodized due to the fact that the sealing ring is damaged by the process in the production process of the vacuum gate valve of the semiconductor equipment can be solved.

Description

Technical Field

[0001] The present invention relates to the semiconductor field, and in particular to a method for manufacturing a vacuum gate valve of a semiconductor device used in a vacuum chamber of a semiconductor ion plating method or a plasma etching process; and a manufacturing mold used in the method for manufacturing the vacuum gate valve of the semiconductor device. Background Art

[0002] During the manufacturing process of semiconductors such as wafers, ion plating or plasma etching is carried out in a clean and highly vacuum environment. Corrosive and reactive gases are used in the manufacturing process. In this working condition, a gate valve that can be opened and closed is required at the entrance and exit of the workpiece. In the past, the design of the gate valve was to design grooves (dovetail grooves, etc.) on metal parts such as aluminum plates or stainless steel plates, and then design a fluororubber or perfluoroether material sealing ring to be installed on the metal part to form a combined gate valve. Since the sealing ring is very easy to fall off from the metal part during use, it is improved to an integrated gate valve. The integrated gate valve design is to bond the metal part with the fluororubber sealing ring or perfluoroether sealing ring to form an integrated gate valve.

[0003] Because the environment is high cleanliness and high vacuum, the metal parts used in the gate valve also need special surface treatment, such as hard oxidation or ordinary oxidation treatment for aluminum, and passivation treatment for stainless steel. In the past, the combined gate valve was a combination of metal parts and sealing rings, so the rubber sealing rings were installed after the metal parts were treated, so that the surface of the metal parts and the rubber sealing rings would not be damaged. However, the integrated gate valve is now integrally formed. If the metal parts are surface treated before the sealing rings and metal are integrally formed, the metal parts need to be placed in the mold when the rubber sealing rings are integrally formed, and the integrally formed rubber sealing rings require high temperatures, so the mold is at high temperatures. In this way, the metal parts will expand after high temperatures, and the metal parts will fit tightly with the mold after expansion. When demolding, the surface of the metal parts will be damaged, and the product will be scrapped. The reason why the metal parts fit tightly with the mold after heat expansion is that both the molds and metal parts have tolerances during processing, and it is impossible to be exactly the same. This will cause the problem of tight fit between the metal parts and the mold in some parts after heat expansion.

[0004] The current surface treatment method for one-piece molded gate valves is: first one-piece mold the rubber seal ring, and then do the surface treatment of the metal parts. Because the metal parts need to be polished and sandblasted during the surface treatment, and also need to be immersed in acid, alkali and other liquids, in order to prevent the rubber seal ring from being damaged during polishing and sandblasting, it is necessary to use pressure-resistant acid and alkali-resistant tape to cover the rubber seal ring in advance, and then perform polishing and sandblasting; because polishing and sandblasting will damage the tape, in order to prevent the acid and alkali from penetrating the damaged tape and damaging the rubber seal ring when soaking in acid and alkali liquids, it is necessary to remove the tape and re-apply a new tape, and then perform the soaking process of acid and alkali and other liquids;

[0005] Since the protruding rubber sealing ring is irregular and relatively small, it is difficult to apply the masking tape; after the tape is applied and masked, it is very easy to partially lift up during grinding and sandblasting, causing local damage to the rubber sealing ring; and because the rubber sealing ring and the metal are bonded very tightly, if you want to protect the bonding area when applying the tape, you must completely cover the bonding area with the tape, so that the tape will be attached to the metal part. However, the position of the metal part covered by the tape cannot be anodized, so it can only cover the rubber sealing ring, and the bonding area cannot be protected, resulting in varying degrees of damage to the bonding area, causing local debonding. This operation is complicated and the defective rate is very high. Therefore, there is an urgent need for a method for making a gate valve to improve the above problems. Summary of the invention

[0006] A series of simplified concepts are introduced in the Summary of the Invention, which are all simplifications of the prior art in the field, and will be further described in detail in the Detailed Description of the Invention. The Summary of the Invention of the present invention does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the scope of protection of the claimed technical solution.

[0007] The technical problem to be solved by the present invention is to provide a method for manufacturing a vacuum gate valve for semiconductor equipment that can solve the technical problem that the metal base cannot be anoded due to the protective sealing ring being damaged by the process (grinding, sandblasting, soaking in acid and alkali liquids) during the production process of the vacuum gate valve for semiconductor equipment.

[0008] In addition, a method for manufacturing a vacuum gate valve for the above-mentioned semiconductor device is provided, which can avoid stress damage caused by different deformation amounts of the metal mold and the metal base due to thermal expansion during the vulcanization process, and can avoid the surface treatment layer of the metal base to form a vacuum gate valve manufacturing mold for the semiconductor device.

[0009] In order to solve the above technical problems, the present invention provides a method for manufacturing a vacuum gate valve for semiconductor equipment, comprising the following steps:

[0010] S1, providing gate valve metal base parts;

[0011] S2, cover the groove position of the metal base sealing ring of the gate valve; for example, use pressure-resistant acid-alkali-resistant tape to cover the groove position of the metal base sealing ring

[0012] S3, performing a preset machining process on the metal base of the gate valve; the preset machining process includes grinding and sandblasting and soaking in acid and alkali liquid processes;

[0013] S4, providing a metal upper mold, wherein the metal upper mold is formed into a molding cavity mold for the gate valve rubber sealing ring;

[0014] Providing a metal middle mold, the metal middle mold is formed as a fixed cavity mold of the gate valve metal base, and a deformable buffer portion is formed in the fixed cavity mold;

[0015] Providing a metal lower mold, the metal lower mold is formed as a structure supporting the metal middle mold and the metal upper mold;

[0016] S5, arranging the metal middle mold on the metal lower mold, arranging the deformable buffer part on the periphery of the metal base and then placing it in the fixed cavity mold of the metal middle mold;

[0017] S6, adding specified rubber to the metal base;

[0018] S7, adding a metal upper mold and entering the vulcanization molding equipment for vulcanization molding;

[0019] S8, removing the metal upper mold, removing the deformable buffer part, removing the metal middle mold and the metal lower mold, and obtaining the vacuum gate valve.

[0020] In order to solve the above technical problems, the present invention provides a semiconductor equipment vacuum gate valve manufacturing mold, comprising:

[0021] A metal upper mold 1, which can be fixedly mounted on a metal middle mold 3, and forms a molding cavity mold 2 for a rubber sealing ring of a gate valve;

[0022] A metal middle mold 3, which can be fixed on a metal lower mold 5, which forms a fixed cavity mold 4 of the gate valve metal base;

[0023] The deformable buffer part 6 is arranged in the fixed cavity mold 4 and can be deformed by force.

[0024] The metal lower mold 5 is formed as a structure that supports the metal middle mold 3 and the metal upper mold 1 .

[0025] Preferably, the semiconductor equipment vacuum gate valve manufacturing mold is further improved, and the size of the fixed cavity mold of the metal middle mold 3 is at least 5 mm larger than the size of the gate valve metal base it accommodates, reserving sufficient deformation space for the metal base to avoid deformation and stress damage caused by thermal expansion of the metal mold and the metal base during the vulcanization process.

[0026] Preferably, the semiconductor equipment vacuum gate valve manufacturing mold is further improved, and the size of the fixed cavity mold of the metal middle mold 3 is larger than the size of the gate valve metal base it accommodates, ranging from 10mm to 40mm. This reserved deformation space is not easy to be too large, and too much reserved deformation space will cause rubber overflow during the vulcanization process.

[0027] Preferably, the semiconductor equipment vacuum gate valve manufacturing mold is further improved, and the deformable buffer part is made of high-temperature resistant special engineering plastics, preferably Teflon material or heat-resistant special plastics.

[0028] In the case of precise process dimensions, the deformable buffer part can be placed directly in the fixed cavity mold of the metal middle mold without being fixed. Through the size matching between the deformable buffer part, the metal base and the fixed cavity mold, the deformable buffer part is located between the metal base and the fixed cavity mold without large-scale movement. Accordingly, in order to avoid process deviation and uneven force caused by the position offset of the deformable buffer part, it is preferred to fix the deformable buffer part in the fixed cavity mold of the metal middle mold by screws, buckles or glue.

[0029] Preferably, the semiconductor equipment vacuum gate valve manufacturing mold is further improved, and a first step structure 9 is formed on the adjacent side of the deformable buffer part 6 and the fixed cavity mold 4 of the metal middle mold 3, and a second step structure 10 adapted to the first step structure 9 is formed on the side wall of the fixed cavity mold 4 of the metal middle mold 3, and the first step structure 9 and the second step structure 10 form an anti-reverse stable support structure.

[0030] Preferably, the semiconductor device vacuum gate valve manufacturing mold is further improved, and a positioning structure is formed between the metal upper mold 1 and the metal middle mold 3, and a positioning structure is formed between the metal middle mold 3 and the metal lower mold 5.

[0031] Preferably, the semiconductor device vacuum gate valve manufacturing mold is further improved, a plurality of first positioning holes 11 are formed on the top surface of the metal middle mold 3, and a plurality of second positioning holes 12 are formed on the bottom surface of the metal middle mold 3;

[0032] A plurality of first positioning columns 13 are formed on the bottom surface of the metal upper mold 1;

[0033] A plurality of second positioning columns 14 are formed on the top surface of the metal lower mold 5;

[0034] The metal upper mold 1 and the metal middle mold 3 are positioned and fixed by the first positioning hole 11 and the first positioning column 13;

[0035] The metal middle mold 3 and the metal lower mold 5 are positioned and fixed by the second positioning holes 12 and the second positioning columns 14 .

[0036] The working principle and technical effects of the present invention are as follows:

[0037] The main design idea of ​​the present invention is to solve the technical problem that the metal base cannot be anoded during the production of the vacuum gate valve of semiconductor equipment due to the protection of the sealing ring to avoid process damage (grinding, sandblasting, soaking in acid and alkali liquids) by changing the process sequence.

[0038] First, prefabricate the metal base of the gate valve. After the processing, use pressure-resistant acid and alkali-resistant tape to bond the metal base to the groove of the sealing ring position to protect it, and then do the grinding, sandblasting and acid and alkali liquid soaking process. Since there is no rubber sealing ring on the metal base at this time, there is no need to worry about the grinding, sandblasting and acid and alkali liquid soaking process damaging the rubber sealing ring. Therefore, there is no need to replace the tape, and the operation is simple and convenient.

[0039] After the surface treatment of the metal base is completed, the metal upper mold, metal middle mold and metal lower mold of the present invention are provided, the metal middle mold is fixed on the metal lower mold, the treated metal base is placed in the fixed cavity of the metal middle mold, and then the rubber material is placed in the groove position of the metal base, the metal upper mold is covered, and the vulcanization integrated molding process sealing ring is performed. That is, by changing the process sequence, the surface treatment of the metal base is first performed, and then the rubber material is vulcanized and integrated in the metal base.

[0040] However, due to the change in the process sequence, the metal mold and the metal base will have different deformations due to different thermal expansion coefficients during the vulcanization integrated molding process (heating and pressing), which will generate stress between the metal mold and the metal base, and the stress will damage the surface treatment layer of the metal base. Therefore, the sealing ring mold designed according to the product size and the expansion coefficient of its metal in the prior art cannot be applied to the manufacturing method of the present invention. If the existing sealing ring mold is directly used, the metal base treatment layer will inevitably be damaged during the vulcanization integrated molding.

[0041] Therefore, the present invention also provides a metal mold that is different from the prior art, and adds a deformable buffer portion. When executing the manufacturing method of the present invention, during the vulcanization process (heating and pressing), even if the metal mold and the metal base expand due to heat, they will not cause stress damage to each other due to the difference in thermal deformation, thereby avoiding damage to the metal base treatment layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The drawings of the present invention are intended to illustrate the general characteristics of the methods, structures and / or materials used in specific exemplary embodiments of the present invention, and to supplement the description in the specification. However, the drawings of the present invention are schematic diagrams not drawn to scale, and thus may not accurately reflect the precise structure or performance characteristics of any given embodiment, and the drawings of the present invention should not be interpreted as limiting or restricting the range of values ​​or properties covered by the exemplary embodiments of the present invention. The present invention is further described in detail below in conjunction with the drawings and specific embodiments.

[0043] Figure 1 It is a schematic diagram of the production process of the present invention.

[0044] Figure 2 The metal upper mold of the present invention is schematically shown Figure 1 , which shows the upward viewing angle.

[0045] Figure 3 The metal middle mold of the present invention is schematically shown Figure 1 , which shows the top-down angle.

[0046] Figure 4 The metal lower mold of the present invention is schematically shown Figure 1 , which shows the top-down angle.

[0047] Figure 5 The metal upper mold of the present invention is schematically shown Figure 2 , which shows the section view angle.

[0048] Figure 6 The metal middle mold of the present invention is schematically shown Figure 2 , which shows the section view angle.

[0049] Figure 7 The metal lower mold of the present invention is schematically shown Figure 2 , which shows the section view angle.

[0050] Description of reference numerals:

[0051] Metal upper die 1;

[0052] Molding cavity mold 2;

[0053] Metal middle mold 3;

[0054] Fixed cavity mold 4;

[0055] Metal lower mold 5;

[0056] Deformable buffer portion 6;

[0057] Positioning column 7;

[0058] Sealing ring cavity 8;

[0059] First step structure 9;

[0060] The second step structure 10;

[0061] A first positioning hole 11;

[0062] A second positioning hole 12;

[0063] A first positioning column 13;

[0064] The second positioning column 14 . DETAILED DESCRIPTION

[0065] The following is an explanation of the embodiments of the present invention by specific specific embodiments, and those skilled in the art can fully understand other advantages and technical effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through different specific embodiments, and the details in this specification can also be applied based on different viewpoints, and various modifications or changes can be made without deviating from the general design concept of the invention. It should be noted that, in the absence of conflict, the following embodiments and the features in the embodiments can be combined with each other. The following exemplary embodiments of the present invention can be implemented in a variety of different forms and should not be interpreted as being limited to the specific embodiments described here. It should be understood that these embodiments are provided to make the disclosure of the present invention thorough and complete, and to fully convey the technical solutions of these exemplary specific embodiments to those skilled in the art. It should be understood that when an element is referred to as "connected" or "coupled" to another element, the element can be directly connected or coupled to another element, or there can be an intermediate element. The difference is that when an element is referred to as "directly connected" or "directly coupled" to another element, there is no intermediate element. In all the drawings, the same reference numerals always represent the same elements.

[0066] First embodiment;

[0067] refer to Figure 1 As shown, the present invention provides a method for manufacturing a vacuum gate valve of a semiconductor device, comprising the following steps:

[0068] S1, providing gate valve metal base parts;

[0069] S2, shielding the groove position of the sealing ring of the metal base of the gate valve by using the existing technical solution;

[0070] S3, performing a preset machining process (grinding and sandblasting to form a processing layer) on the metal base of the gate valve;

[0071] S4, provide metal upper mold 1, reference Figure 2 and Figure 5 As shown, the metal upper mold 1 is formed into a molding cavity mold 2 of a gate valve rubber sealing ring;

[0072] Provide metal mold 3, reference Figure 3 and Figure 6 As shown, the metal middle mold 3 is formed as a fixed cavity mold 4 of the gate valve metal base, and a deformable buffer portion is formed in the fixed cavity mold;

[0073] Provide metal lower mold 5, reference Figure 4 and Figure 7 As shown, the metal lower mold 5 is formed as a structure supporting the metal middle mold 3 and the metal upper mold 1;

[0074] S5, arranging the metal middle mold 3 on the metal lower mold 5, arranging the deformable buffer part 6 on the periphery of the metal base and then placing it in the fixed cavity mold 4 of the metal middle mold 3;

[0075] S6, adding a specified rubber material to the metal base member, the rubber material is located in the groove of the sealing ring of the metal base member, and the groove position corresponds to the sealing ring cavity 8;

[0076] S7, adding a metal upper mold 1, and entering the vulcanization molding equipment for vulcanization molding;

[0077] S8, remove the metal upper mold 1, remove the deformable buffer part 6, remove the metal middle mold 3 and the metal lower mold 5, and obtain the vacuum gate valve.

[0078] Second embodiment;

[0079] refer to Figures 2 to 7 As shown, the present invention provides a semiconductor device vacuum gate valve manufacturing mold, comprising:

[0080] A metal upper mold 1, which can be fixedly mounted on a metal middle mold 3, and forms a molding cavity mold 2 for a rubber sealing ring of a gate valve;

[0081] A metal middle mold 3, which can be fixed on a metal lower mold 5, which forms a fixed cavity mold 4 of the gate valve metal base;

[0082] The deformable buffer part 6 is arranged in the fixed cavity mold 4 and can be deformed by force.

[0083] The metal lower mold 5 is formed as a structure that supports the metal middle mold 3 and the metal upper mold 1 .

[0084] The size of the fixed cavity mold of the metal middle mold 3 is at least 5 mm larger than the size of the gate valve metal base it accommodates. Preferably, the size of the fixed cavity mold of the metal middle mold 3 is 10 mm to 40 mm larger than the size of the gate valve metal base it accommodates.

[0085] Optionally, the deformable buffer portion is made of high temperature resistant special engineering plastics, preferably Teflon.

[0086] Optionally, the deformable buffer portion is fixed in the fixed cavity mold of the metal middle mold by screws, buckles or adhesives.

[0087] Further improving the above embodiment;

[0088] Continue to refer Figures 5 to 7 As shown, a first step structure 9 is formed on one side adjacent to the deformable buffer portion 6 and the fixed cavity mold 4 of the metal middle mold 3, and a second step structure 10 adapted to the first step structure 9 is formed on the side wall of the fixed cavity mold 4 of the metal middle mold 3, and the first step structure 9 and the second step structure 10 form an anti-reverse stable support structure;

[0089] A plurality of first positioning holes 11 are formed on the top surface of the metal middle mold 3, and a plurality of second positioning holes 12 are formed on the bottom surface of the metal middle mold 3;

[0090] A plurality of first positioning columns 13 are formed on the bottom surface of the metal upper mold 1;

[0091] A plurality of second positioning columns 14 are formed on the top surface of the metal lower mold 5;

[0092] The metal upper mold 1 and the metal middle mold 3 are positioned and fixed by the first positioning hole 11 and the first positioning column 13;

[0093] The metal middle mold 3 and the metal lower mold 5 are positioned and fixed by the second positioning holes 12 and the second positioning columns 14 .

[0094] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. It will also be understood that, unless expressly defined herein, terms such as those defined in general dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and not interpreted in an ideal or overly formal sense.

[0095] The present invention has been described in detail above through specific implementation modes and embodiments, but these do not constitute limitations of the present invention. Without departing from the principles of the present invention, those skilled in the art may also make many variations and improvements, which should also be regarded as the protection scope of the present invention.

Claims

1. A method for manufacturing a vacuum gate valve for semiconductor equipment, characterized in that: The following steps are involved: S1, providing gate valve metal base parts; S2, cover the groove position of the sealing ring of the metal base of the gate valve; S3, performing a preset machining process on the gate valve metal base part; S4, providing a metal upper mold, wherein the metal upper mold is formed into a molding cavity mold for the gate valve rubber sealing ring; Providing a metal middle mold, the metal middle mold is formed as a fixed cavity mold of the gate valve metal base, and a deformable buffer portion is formed in the fixed cavity mold; Providing a metal lower mold, the metal lower mold is formed as a structure supporting the metal middle mold and the metal upper mold; S5, arranging the metal middle mold on the metal lower mold, arranging the deformable buffer part on the periphery of the metal base component and then placing it in the fixed cavity mold of the metal middle mold; S6, adding specified rubber to the metal base; S7, adding a metal upper mold and entering the vulcanization molding equipment for vulcanization molding; S8, removing the metal upper mold, removing the deformable buffer part, removing the metal middle mold and the metal lower mold, and obtaining the vacuum gate valve.

2. A semiconductor device vacuum gate valve manufacturing mold, which is used in the semiconductor device vacuum gate valve manufacturing method according to claim 1, characterized in that: include: A metal upper mold (1) which can be fixedly mounted on a metal middle mold (3) to form a molding cavity mold (2) for a rubber sealing ring of a gate valve; A metal middle mold (3) which can be fixed on a metal lower mold (5) to form a fixed cavity mold (4) for a gate valve metal base member; The deformable buffer part (6) is arranged in the fixed cavity mold (4) and can be deformed under force. The metal lower mold (5) is formed into a structure supporting the metal middle mold (3) and the metal upper mold (1).

3. The semiconductor equipment vacuum gate valve manufacturing mold according to claim 2, characterized in that: The size of the fixed cavity mold of the metal middle mold (3) is at least 5 mm larger than the size of the gate valve metal base member accommodated therein.

4. The semiconductor equipment vacuum gate valve manufacturing mold as claimed in claim 3, characterized in that: The size of the fixed cavity mold of the metal middle mold (3) is larger than the size of the gate valve metal base member accommodated therein, and the size range is 10mm to 40mm.

5. The semiconductor equipment vacuum gate valve manufacturing mold as claimed in claim 2, characterized in that: The deformable buffer part is made of high temperature resistant special engineering plastics.

6. The semiconductor equipment vacuum gate valve manufacturing mold according to claim 2, characterized in that: The deformable buffer part is fixed in the fixed cavity mold of the metal middle mold by screws, buckles or adhesives.

7. The semiconductor equipment vacuum gate valve manufacturing mold as claimed in claim 2, characterized in that: A first step structure (9) is formed on one side adjacent to the deformable buffer portion (6) and the fixed cavity mold (4) of the metal middle mold (3), and a second step structure (10) adapted to the first step structure (9) is formed on the side wall of the fixed cavity mold (4) of the metal middle mold (3).

8. The semiconductor equipment vacuum gate valve manufacturing mold as claimed in claim 2, characterized in that: A positioning structure is formed between the metal upper mold (1) and the metal middle mold (3), and a positioning structure is formed between the metal middle mold (3) and the metal lower mold (5).

9. The semiconductor equipment vacuum gate valve manufacturing mold according to claim 2, characterized in that: A plurality of first positioning holes (11) are formed on the top surface of the metal middle mold (3), and a plurality of second positioning holes (12) are formed on the bottom surface of the metal middle mold (3); A plurality of first positioning columns (13) are formed on the bottom surface of the metal upper mold (1); A plurality of second positioning columns (14) are formed on the top surface of the metal lower mold (5); The metal upper mold (1) and the metal middle mold (3) are positioned and fixed via a first positioning hole (11) and a first positioning column (13); The metal middle mold (3) and the metal lower mold (5) are positioned and fixed by means of a second positioning hole (12) and a second positioning column (14).

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