Aluminum alloy surface coating method

Abstract

The invention discloses a coating method for an aluminum alloy surface. The coating method comprises the following steps: carrying out ultrasonic cleaning treatment on an aluminum alloy matrix; carrying out ion sputtering cleaning treatment on the aluminum alloy matrix subjected to ultrasonic cleaning; depositing a nickel layer on the surface of the aluminum alloy matrix subjected to ion cleaning; depositing a nickel nitride layer on the surface of the nickel layer; and depositing a chromium nitride layer on the surface of the nickel nitride layer. By the adoption of the technical scheme, a layer of abrasion-resistant and corrosion-resistant film can be prepared on the surface of the aluminum alloy, the aluminum alloy is effectively protected through a barrier formed by the film between an aluminum alloy matrix and the external environment, the abrasion resistance and corrosion resistance of the surface of the aluminum alloy are improved, and the application range of the aluminum alloy is expanded.

Description

Technical Field

[0001] The invention relates to the technical field of coating, and in particular to a coating method for an aluminum alloy surface. Background Art

[0002] With the rapid progress of science and technology, the level of traditional metal surface treatment technology has been significantly improved. In particular, aluminum alloy technology is widely used in the field of industrial manufacturing due to its low density, high strength, light weight, and easy processing. However, the hardness of aluminum alloy itself is low and its corrosion resistance is poor, which greatly restricts the application prospects of aluminum alloy. Therefore, it is very important to treat the surface of aluminum alloy to provide effective protection and improve the surface performance of aluminum alloy. Summary of the invention

[0003] The purpose of the embodiments of the present invention is to provide a coating method for the surface of an aluminum alloy, which can prepare a wear-resistant and corrosion-resistant film on the surface of the aluminum alloy, and utilize the barrier formed by the film between the aluminum alloy substrate and the external environment to effectively protect the aluminum alloy, improve the wear resistance and corrosion resistance of the aluminum alloy surface, and expand the application range of the aluminum alloy.

[0004] In order to achieve the above object, an embodiment of the present invention provides a coating method for an aluminum alloy surface, comprising:

[0005] Ultrasonic cleaning of the aluminum alloy substrate;

[0006] The aluminum alloy substrate after ultrasonic cleaning is subjected to ion sputtering cleaning treatment;

[0007] Depositing a nickel layer on the surface of the ion-cleaned aluminum alloy substrate;

[0008] depositing a nickel nitride layer on the surface of the nickel layer;

[0009] A chromium nitride layer is deposited on the surface of the nickel nitride layer.

[0010] Furthermore, the ultrasonic cleaning of the aluminum alloy substrate specifically includes:

[0011] The aluminum alloy substrate is ultrasonically cleaned for 10 to 20 minutes using deionized water at an ultrasonic frequency of 40 kHz.

[0012] Furthermore, the ion sputtering cleaning treatment of the aluminum alloy substrate after ultrasonic cleaning specifically includes:

[0013] The aluminum alloy substrate after ultrasonic cleaning was placed in a vacuum chamber and evacuated to a vacuum degree of 5.0×10 -3 Pa;

[0014] Argon gas was introduced into the vacuum chamber at a flow rate of 20 sccm, and the gas pressure in the vacuum chamber was adjusted to 2.5-3.0 Pa;

[0015] Under the conditions of an argon gas flow rate of 12 sccm and a substrate bias voltage of -500 to -800 V, the aluminum alloy substrate is cleaned by argon ion sputtering for 10 to 20 minutes.

[0016] Furthermore, the step of depositing a nickel layer on the surface of the aluminum alloy substrate after ion cleaning specifically comprises:

[0017] The argon gas flow rate was adjusted from 20 sccm to 12 sccm, the gas pressure in the vacuum chamber was adjusted to 0.5-1.0 Pa, the substrate bias voltage was adjusted to -50--65 V, and the DC current of the nickel target power supply was adjusted to 0.45-0.55 A;

[0018] A nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning under the conditions of argon gas flow rate of 10sccm, gas pressure in the vacuum chamber of 1.0Pa, substrate bias of -50 to -65V, DC current of the nickel target power supply of 0.5A, pulse amplitude of 800 to 900V, pulse width of 200 to 220μs, and pulse frequency of 50Hz.

[0019] Furthermore, the deposition time of the nickel layer is 45 to 65 minutes, and the thickness of the nickel layer is 4 to 5 μm.

[0020] Further, depositing a nickel nitride layer on the surface of the nickel layer specifically includes:

[0021] Nitrogen is introduced into the vacuum chamber at a flow rate of 5 to 10 sccm, and the pressure in the vacuum chamber is adjusted to 0.5 to 1.0 Pa;

[0022] Under the conditions of an argon flow rate of 20 sccm, a nitrogen flow rate of 48 sccm, a gas pressure of 0.5 to 1.0 Pa in a vacuum chamber, a substrate bias of -50 to -60 V, a direct current of a nickel target power supply of 0.5 A, a pulse amplitude of 800 to 900 V, a pulse width of 200 to 220 μs, and a pulse frequency of 50 Hz, a nickel nitride layer is deposited on the surface of the nickel layer.

[0023] Furthermore, the deposition time of the nickel nitride layer is 65 to 80 minutes, and the thickness of the nickel nitride layer is 5 to 7 μm.

[0024] Furthermore, depositing a chromium nitride layer on the surface of the nickel nitride layer specifically includes:

[0025] The DC current of the chromium target power supply was adjusted to 0.5A, the pulse amplitude was adjusted to 800-900V, the pulse width was adjusted to 200-220μs, and the pulse frequency was adjusted to 50Hz;

[0026] Under the conditions that an argon flow rate is 20 sccm, a nitrogen flow rate is 5 sccm, a gas pressure in a vacuum chamber is 0.5-1.0 Pa, and a substrate bias voltage is -50--65 V, a chromium nitride layer is deposited on the surface of the nickel nitride layer.

[0027] Furthermore, the deposition time of the chromium nitride layer is 100 to 120 minutes, and the thickness of the chromium nitride layer is 6 to 10 μm.

[0028] Compared with the prior art, the embodiment of the present invention provides a coating method for the surface of an aluminum alloy, firstly, the aluminum alloy substrate is subjected to ultrasonic cleaning; then, the aluminum alloy substrate after ultrasonic cleaning is subjected to ion sputtering cleaning; then, a nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning; then, a nickel nitride layer is deposited on the surface of the nickel layer; finally, a chromium nitride layer is deposited on the surface of the nickel nitride layer. The embodiment of the present invention can prepare a layer of wear-resistant and corrosion-resistant film on the surface of the aluminum alloy, and effectively protect the aluminum alloy by using the barrier formed by the film between the aluminum alloy substrate and the external environment, improve the wear resistance and corrosion resistance of the aluminum alloy surface, and expand the application range of the aluminum alloy. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a flow chart of a preferred embodiment of a coating method for an aluminum alloy surface provided by the present invention;

[0030] Figure 2 It is a structural schematic diagram of a preferred embodiment of a coated aluminum alloy provided by the present invention. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.

[0032] The present invention provides a method for coating an aluminum alloy surface. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a method for coating an aluminum alloy surface provided by the present invention, wherein the method comprises steps S11 to S15:

[0033] Step S11, performing ultrasonic cleaning on the aluminum alloy substrate;

[0034] Step S12, performing ion sputtering cleaning on the aluminum alloy substrate after ultrasonic cleaning;

[0035] Step S13, depositing a nickel layer on the surface of the aluminum alloy substrate after ion cleaning;

[0036] Step S14, depositing a nickel nitride layer on the surface of the nickel layer;

[0037] Step S15, depositing a chromium nitride layer on the surface of the nickel nitride layer.

[0038] In the specific implementation, first, an ultrasonic cleaning step is performed: the aluminum alloy substrate to be coated is subjected to ultrasonic cleaning treatment; then, an ion sputtering cleaning step is performed: the aluminum alloy substrate after the ultrasonic cleaning treatment is subjected to ion sputtering cleaning treatment to decompose and remove impurities and organic matter on the surface of the aluminum alloy substrate; then, a nickel layer deposition step is performed: a nickel layer is deposited on the surface of the aluminum alloy substrate after the ion cleaning treatment; then, a nickel nitride layer deposition step is performed: a nickel nitride layer is deposited on the surface of the nickel layer; finally, a chromium nitride deposition step is performed: a chromium nitride layer is deposited on the surface of the nickel nitride layer.

[0039] Combination Figure 2 As shown, it is a structural schematic diagram of a preferred embodiment of a plated aluminum alloy provided by the present invention. The surface of the aluminum alloy substrate is plated by adopting the coating scheme provided by the embodiment of the present invention. The corresponding plated aluminum alloy is mainly composed of an aluminum alloy substrate, a nickel layer, a nickel nitride layer and a chromium nitride layer, and the nickel layer is on the surface of the aluminum alloy substrate, the nickel nitride layer is on the surface of the nickel layer, and the chromium nitride layer is on the surface of the nickel nitride layer.

[0040] In another preferred embodiment, the ultrasonic cleaning of the aluminum alloy substrate specifically includes:

[0041] The aluminum alloy substrate is ultrasonically cleaned for 10 to 20 minutes using deionized water at an ultrasonic frequency of 40 kHz.

[0042] Specifically, in combination with the above embodiments, when actually performing the ultrasonic cleaning step, deionized water can be used, and the aluminum alloy substrate can be placed in deionized water. Under the condition of an ultrasonic frequency of 40kHz, the aluminum alloy substrate in the deionized water is ultrasonically cleaned, and the ultrasonic cleaning time is 10min to 20min.

[0043] Exemplarily, the ultrasonic cleaning time can be 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes, 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes or 20 minutes, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0044] In another preferred embodiment, the ion sputtering cleaning treatment of the aluminum alloy substrate after ultrasonic cleaning specifically includes:

[0045] The aluminum alloy substrate after ultrasonic cleaning was placed in a vacuum chamber and evacuated to a vacuum degree of 5.0×10 -3 Pa;

[0046] Argon gas was introduced into the vacuum chamber at a flow rate of 20 sccm, and the pressure in the vacuum chamber was adjusted to 2.5-3.0 Pa;

[0047] Under the conditions of an argon gas flow rate of 12 sccm and a substrate bias voltage of -500 to -800 V, the aluminum alloy substrate is cleaned by argon ion sputtering for 10 to 20 minutes.

[0048] Specifically, in combination with the above embodiment, when the ion sputtering cleaning step is actually performed, the aluminum alloy substrate after ultrasonic cleaning can be placed in a vacuum chamber, and the vacuum chamber is evacuated to a vacuum degree of 5.0×10 -3 Pa, and then argon (Ar) is introduced into the vacuum chamber at a flow rate of 20 sccm, and the gas pressure in the vacuum chamber is adjusted to 2.5Pa~3.0Pa, and then, under the conditions of argon flow rate of 12 sccm and substrate bias of -500V~-800V, the aluminum alloy substrate after ultrasonic cleaning is subjected to Ar ion sputtering cleaning, and the ion sputtering cleaning time is 10min~20min.

[0049] Exemplarily, when performing the ion sputtering cleaning step, the value of the substrate bias voltage can be -500V, -510V, -530V, -540V, -550V, -570V, -590V, -600V, -620V, -630V, -650V, -660V, -680V, ​​-700V, -710V, -720V, -740V, -750V, -770V, -790V, or -800V, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0050] Exemplarily, the ion sputtering cleaning time can be 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes, 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes or 20 minutes, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0051] In another preferred embodiment, depositing a nickel layer on the surface of the aluminum alloy substrate after ion cleaning specifically comprises:

[0052] The argon gas flow rate was adjusted from 20 sccm to 12 sccm, the gas pressure in the vacuum chamber was adjusted to 0.5-1.0 Pa, the substrate bias voltage was adjusted to -50--65 V, and the DC current of the nickel target power supply was adjusted to 0.45-0.55 A;

[0053] A nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning under the conditions of argon gas flow rate of 10sccm, gas pressure in the vacuum chamber of 1.0Pa, substrate bias of -50 to -65V, DC current of the nickel target power supply of 0.5A, pulse amplitude of 800 to 900V, pulse width of 200 to 220μs, and pulse frequency of 50Hz.

[0054] Specifically, in combination with the above embodiments, when actually performing the step of depositing a nickel layer, the flow rate of argon gas introduced into the vacuum chamber can be adjusted from 20 sccm to 12 sccm, the gas pressure in the vacuum chamber can be adjusted to 0.5 Pa ~ 1.0 Pa, the substrate bias can be adjusted to -50 V ~ -65 V, and the DC current of the nickel target power supply can be adjusted to 0.45 A ~ 0.55 A. Then, under the conditions of an argon flow rate of 10 sccm, a gas pressure of 1.0 Pa in the vacuum chamber, a substrate bias of -50 V ~ -65 V, a DC current of 0.5 A of the nickel target power supply, a pulse amplitude of 800 V ~ 900 V, a pulse width of 200 μs ~ 220 μs, and a pulse frequency of 50 Hz, a nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning.

[0055] Exemplarily, when performing the step of depositing a nickel layer, the value of the substrate bias can be -50V, -51V, -52V, -53V, -54V, -55V, -56V, -57V, -58V, -59V, -60V, -61V, -62V, -63V, -64V or -65V, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0056] Exemplarily, when performing the step of depositing a nickel layer, the pulse amplitude of the nickel target power supply can be 800V, 810V, 820V, 830V, 840V, 850V, 860V, 870V, 880V, 890V or 900V, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0057] Exemplarily, when executing the step of depositing a nickel layer, the pulse width of the nickel target power supply can be 200μs, 201μs, 202μs, 203μs, 204μs, 205μs, 206μs, 207μs, 208μs, 209μs, 210μs, 211μs, 212μs, 213μs, 214μs, 215μs, 216μs, 217μs, 218μs, 219μs or 220μs, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0058] As a preferred solution, the deposition time of the nickel layer is 45 to 65 minutes, and the thickness of the nickel layer is 4 to 5 μm.

[0059] Specifically, in combination with the above embodiment, in the process of depositing a nickel layer on the surface of the aluminum alloy substrate, the deposition time is 45 min to 65 min, and the thickness of the deposited nickel layer is 4 μm to 5 μm.

[0060] Exemplarily, the deposition time of the nickel layer can be 45 minutes, 46 minutes, 47 minutes, 48 ​​minutes, 49 minutes, 50 minutes, 51 minutes, 52 minutes, 53 minutes, 54 minutes, 55 minutes, 56 minutes, 57 minutes, 58 minutes, 59 minutes, 60 minutes, 61 minutes, 62 minutes, 63 minutes, 64 minutes or 65 minutes, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0061] Exemplarily, the thickness of the nickel layer can be 4 μm, 4.1 μm, 4.2 μm, 4.3 μm, 4.4 μm, 4.5 μm, 4.6 μm, 4.7 μm, 4.8 μm, 4.9 μm or 5 μm, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0062] In another preferred embodiment, depositing a nickel nitride layer on the surface of the nickel layer specifically comprises:

[0063] Nitrogen is introduced into the vacuum chamber at a flow rate of 5 to 10 sccm, and the pressure in the vacuum chamber is adjusted to 0.5 to 1.0 Pa;

[0064] Under the conditions of an argon flow rate of 20 sccm, a nitrogen flow rate of 48 sccm, a gas pressure of 0.5 to 1.0 Pa in a vacuum chamber, a substrate bias of -50 to -60 V, a direct current of a nickel target power supply of 0.5 A, a pulse amplitude of 800 to 900 V, a pulse width of 200 to 220 μs, and a pulse frequency of 50 Hz, a nickel nitride layer is deposited on the surface of the nickel layer.

[0065] Specifically, in combination with the above embodiments, when actually performing the step of depositing nickel nitride, nitrogen gas can be first introduced into the vacuum chamber at a flow rate of 5sccm to 10sccm, and the gas pressure in the vacuum chamber can be adjusted to 0.5Pa to 1.0Pa, and then a nickel nitride layer is deposited on the surface of the nickel layer under the conditions of an argon flow rate of 20sccm, a nitrogen flow rate of 48sccm, a gas pressure in the vacuum chamber of 0.5Pa to 1.0Pa, a substrate bias of -50V to -60V, a DC current of a nickel target power supply of 0.5A, a pulse amplitude of 800V to 900V, a pulse width of 200μs to 220μs, and a pulse frequency of 50Hz.

[0066] For example, when performing the nickel nitride deposition step, the substrate bias voltage may be -50V, -51V, -52V, -53V, -54V, -55V, -56V, -57V, -58V, -59V or -60V, and may also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0067] Exemplarily, when performing the nickel nitride deposition step, the pulse amplitude of the nickel target power supply can be 800V, 810V, 820V, 830V, 840V, 850V, 860V, 870V, 880V, 890V or 900V, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0068] Exemplarily, when performing the nickel nitride deposition step, the pulse width of the nickel target power supply can be 200μs, 201μs, 202μs, 203μs, 204μs, 205μs, 206μs, 207μs, 208μs, 209μs, 210μs, 211μs, 212μs, 213μs, 214μs, 215μs, 216μs, 217μs, 218μs, 219μs or 220μs, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0069] As a preferred solution, the deposition time of the nickel nitride layer is 65 to 80 minutes, and the thickness of the nickel nitride layer is 5 to 7 μm.

[0070] Specifically, in combination with the above embodiment, in the process of depositing the nickel nitride layer on the surface of the nickel layer, the deposition time is 65 min to 80 min, and the thickness of the deposited nickel nitride layer is 5 μm to 7 μm.

[0071] Exemplarily, the deposition time of the nickel nitride layer can be 65 minutes, 66 minutes, 67 minutes, 68 minutes, 69 minutes, 70 minutes, 71 minutes, 72 minutes, 73 minutes, 74 minutes, 75 minutes, 76 minutes, 77 minutes, 78 minutes, 79 minutes or 80 minutes, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0072] Exemplarily, the thickness of the nickel nitride layer can be 5μm, 5.1μm, 5.2μm, 5.3μm, 5.4μm, 5.5μm, 5.6μm, 5.7μm, 5.8μm, 5.9μm, 6μm, 6.1μm, 6.2μm, 6.3μm, 6.4μm, 6.5μm, 6.6μm, 6.7μm, 6.8μm, 6.9μm or 7μm, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0073] In another preferred embodiment, depositing a chromium nitride layer on the surface of the nickel nitride layer specifically comprises:

[0074] The DC current of the chromium target power supply was adjusted to 0.5A, the pulse amplitude was adjusted to 800-900V, the pulse width was adjusted to 200-220μs, and the pulse frequency was adjusted to 50Hz;

[0075] Under the conditions that an argon flow rate is 20 sccm, a nitrogen flow rate is 5 sccm, a gas pressure in a vacuum chamber is 0.5-1.0 Pa, and a substrate bias voltage is -50--65 V, a chromium nitride layer is deposited on the surface of the nickel nitride layer.

[0076] Specifically, in combination with the above embodiments, when actually performing the step of depositing chromium nitride, the DC current of the chromium target power supply can be adjusted to 0.5A, the pulse amplitude of the chromium target power supply can be adjusted to 800V~900V, the pulse width of the chromium target power supply can be adjusted to 200μs~220μs, and the pulse frequency of the chromium target power supply can be adjusted to 50Hz. Then, under the conditions of an argon flow rate of 20sccm, a nitrogen flow rate of 5sccm, a gas pressure of 0.5Pa~1.0Pa in the vacuum chamber, and a substrate bias of -50V~-65V, a chromium nitride layer is deposited on the surface of the nickel nitride layer.

[0077] Exemplarily, when performing the step of depositing chromium nitride, the pulse amplitude of the chromium target power supply can be 800V, 810V, 820V, 830V, 840V, 850V, 860V, 870V, 880V, 890V or 900V, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0078] Exemplarily, when performing the step of depositing chromium nitride, the pulse width of the chromium target power supply can be 200μs, 201μs, 202μs, 203μs, 204μs, 205μs, 206μs, 207μs, 208μs, 209μs, 210μs, 211μs, 212μs, 213μs, 214μs, 215μs, 216μs, 217μs, 218μs, 219μs or 220μs, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0079] Exemplarily, when performing the step of depositing chromium nitride, the value of the substrate bias can be -50V, -51V, -52V, -53V, -54V, -55V, -56V, -57V, -58V, -59V, -60V, -61V, -62V, -63V, -64V or -65V, and can also be set according to actual needs, which is not specifically limited in the embodiment of the present invention.

[0080] As a preferred solution, the deposition time of the chromium nitride layer is 100 to 120 minutes, and the thickness of the chromium nitride layer is 6 to 10 μm.

[0081] Specifically, in combination with the above embodiment, in the process of depositing the chromium nitride layer on the surface of the nickel nitride layer, the deposition time is 100 min to 120 min, and the thickness of the deposited chromium nitride layer is 6 μm to 10 μm.

[0082] Exemplarily, the deposition time of the chromium nitride layer can be 100 minutes, 101 minutes, 102 minutes, 103 minutes, 104 minutes, 105 minutes, 106 minutes, 107 minutes, 108 minutes, 109 minutes, 110 minutes, 111 minutes, 112 minutes, 113 minutes, 114 minutes, 115 minutes, 116 minutes, 117 minutes, 118 minutes, 119 minutes or 120 minutes, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0083] Exemplarily, the thickness of the chromium nitride layer can be 6 μm, 6.1 μm, 6.2 μm, 6.3 μm, 6.4 μm, 6.5 μm, 6.6 μm, 6.7 μm, 6.8 μm, 6.9 μm, 7 μm, 7.1 μm, 7.2 μm, 7.3 μm, 7.4 μm, 7.5 μm, 7.6 μm, 7.7 μm, 7.8 μm, 7.9 μm, 8 μm, 8.1 The thickness of the optical fiber can be set to 10μm, 8.2μm, 8.3μm, 8.4μm, 8.5μm, 8.6μm, 8.7μm, 8.8μm, 8.9μm, 9μm, 9.1μm, 9.2μm, 9.3μm, 9.4μm, 9.5μm, 9.6μm, 9.7μm, 9.8μm, 9.9μm, or 10μm, and can also be set according to actual needs, which is not specifically limited in the embodiments of the present invention.

[0084] In combination with all the above embodiments, the implementation process of the present scheme is described below through the first specific embodiment, including: (1) ultrasonic cleaning step: using deionized water, ultrasonic cleaning the aluminum alloy substrate for 10 minutes under the condition of an ultrasonic frequency of 40kHz; (2) ion sputtering cleaning step: first placing the aluminum alloy substrate after ultrasonic cleaning in a vacuum chamber, and evacuating the vacuum chamber to a vacuum degree of 5.0×10 -3Pa, then introduce argon gas into the vacuum chamber at a flow rate of 20 sccm, and adjust the air pressure in the vacuum chamber to 2.5 Pa. Then, under the conditions of argon gas flow rate of 12 sccm and substrate bias voltage of -500 V, the aluminum alloy substrate after ultrasonic cleaning is subjected to Ar ion sputtering cleaning for 10 min; (3) nickel layer deposition step: adjust the argon gas flow rate from 20 sccm to 12 sccm, adjust the air pressure in the vacuum chamber to 0.5 Pa, adjust the substrate bias voltage to -50 V, and adjust the DC current of the nickel target power supply to 0.5 A. Under the conditions of argon gas flow rate of 10 sccm, gas pressure in the vacuum chamber of 1.0 Pa, substrate bias voltage of -50 V, direct current of nickel target power supply of 0.5 A, pulse amplitude of nickel target power supply of 800 V, pulse width of nickel target power supply of 200 μs, and pulse frequency of nickel target power supply of 50 Hz, a nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning; wherein the deposition time of the nickel layer is 45 min, and the thickness of the nickel layer is 4 μm; (4) step of depositing nickel nitride layer: nitrogen is introduced into the vacuum chamber at a flow rate of 5 sccm. The gas was added, and the gas pressure in the vacuum chamber was adjusted to 0.5 Pa. Under the conditions that the argon flow rate was 20 sccm, the nitrogen flow rate was 48 sccm, the gas pressure in the vacuum chamber was 0.5 Pa, the substrate bias was -50 V, the direct current of the nickel target power supply was 0.5 A, the pulse amplitude of the nickel target power supply was 800 V, the pulse width of the nickel target power supply was 200 μs, and the pulse frequency of the nickel target power supply was 50 Hz, a nickel nitride layer was deposited on the surface of the nickel layer; wherein the deposition time of the nickel nitride layer was 65 min, and the thickness of the nickel nitride layer was 5 μm; (5 ) Step of depositing chromium nitride: adjusting the DC current of the chromium target power supply to 0.5A, adjusting the pulse amplitude of the chromium target power supply to 800V, adjusting the pulse width of the chromium target power supply to 200μs, adjusting the pulse frequency of the chromium target power supply to 50Hz, and depositing a chromium nitride layer on the surface of the nickel nitride layer under the conditions of an argon flow rate of 20sccm, a nitrogen flow rate of 5sccm, a gas pressure of 0.5Pa in the vacuum chamber, and a substrate bias of -50V; wherein the deposition time of the chromium nitride layer is 100min, and the thickness of the chromium nitride layer is 6μm.

[0085] In combination with all the above embodiments, the implementation process of the present solution is described below through a second specific embodiment, including: (1) ultrasonic cleaning step: using deionized water, ultrasonic cleaning the aluminum alloy substrate for 15 minutes under the condition of an ultrasonic frequency of 40 kHz; (2) ion sputtering cleaning step: first placing the aluminum alloy substrate after ultrasonic cleaning in a vacuum chamber, and evacuating the vacuum chamber to a vacuum degree of 5.0×10 -3Pa, then introduce argon gas into the vacuum chamber at a flow rate of 20 sccm, and adjust the gas pressure in the vacuum chamber to 2.7 Pa, then, under the conditions of argon gas flow rate of 12 sccm and substrate bias voltage of -650 V, the aluminum alloy substrate after ultrasonic cleaning is subjected to Ar ion sputtering cleaning for 15 min; (3) nickel layer deposition step: adjust the argon gas flow rate from 20 sccm to 12 sccm, adjust the gas pressure in the vacuum chamber to 0.7 Pa, adjust the substrate bias voltage to -57 V, adjust the DC current of the nickel target power supply to 0.5 A, and Under the conditions that the argon flow rate is 10 sccm, the pressure in the vacuum chamber is 1.0 Pa, the substrate bias is -57 V, the DC current of the nickel target power supply is 0.5 A, the pulse amplitude of the nickel target power supply is 850 V, the pulse width of the nickel target power supply is 210 μs, and the pulse frequency of the nickel target power supply is 50 Hz, a nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning; wherein the deposition time of the nickel layer is 55 min, and the thickness of the nickel layer is 4.5 μm; (4) step of depositing the nickel nitride layer: introducing argon gas into the vacuum chamber at a flow rate of 7 sccm Nitrogen, and the pressure in the vacuum chamber is adjusted to 0.7Pa, and a nickel nitride layer is deposited on the surface of the nickel layer under the conditions of an argon flow rate of 20sccm, a nitrogen flow rate of 48sccm, a pressure in the vacuum chamber of 0.7Pa, a substrate bias of -55V, a direct current of a nickel target power supply of 0.5A, a pulse amplitude of the nickel target power supply of 850V, a pulse width of the nickel target power supply of 210μs, and a pulse frequency of the nickel target power supply of 50Hz; wherein the deposition time of the nickel nitride layer is 72min, and the thickness of the nickel nitride layer is 6μm; ( 5) Deposition step of chromium nitride: adjusting the DC current of the chromium target power supply to 0.5A, adjusting the pulse amplitude of the chromium target power supply to 850V, adjusting the pulse width of the chromium target power supply to 210μs, adjusting the pulse frequency of the chromium target power supply to 50Hz, and depositing a chromium nitride layer on the surface of the nickel nitride layer under the conditions of an argon flow rate of 20sccm, a nitrogen flow rate of 5sccm, a gas pressure of 0.7Pa in the vacuum chamber, and a substrate bias of -57V; wherein the deposition time of the chromium nitride layer is 110min, and the thickness of the chromium nitride layer is 8μm.

[0086] In combination with all the above embodiments, the implementation process of the present scheme is described below through the third specific embodiment, including: (1) ultrasonic cleaning step: using deionized water, ultrasonic cleaning the aluminum alloy substrate for 20 minutes under the condition of an ultrasonic frequency of 40kHz; (2) ion sputtering cleaning step: first placing the aluminum alloy substrate after ultrasonic cleaning in a vacuum chamber, and evacuating the vacuum chamber to a vacuum degree of 5.0×10 -3Pa, then introduce argon gas into the vacuum chamber at a flow rate of 20 sccm, and adjust the air pressure in the vacuum chamber to 3.0 Pa. Then, under the conditions of argon gas flow rate of 12 sccm and substrate bias voltage of -800 V, the aluminum alloy substrate after ultrasonic cleaning is subjected to Ar ion sputtering cleaning for 20 min; (3) nickel layer deposition step: adjust the argon gas flow rate from 20 sccm to 12 sccm, adjust the air pressure in the vacuum chamber to 1.0 Pa, adjust the substrate bias voltage to -65 V, adjust the DC current of the nickel target power supply to 0.5 A, and Under the conditions that the argon flow rate is 10 sccm, the pressure in the vacuum chamber is 1.0 Pa, the substrate bias is -65 V, the DC current of the nickel target power supply is 0.5 A, the pulse amplitude of the nickel target power supply is 900 V, the pulse width of the nickel target power supply is 220 μs, and the pulse frequency of the nickel target power supply is 50 Hz, a nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning; wherein the deposition time of the nickel layer is 65 min and the thickness of the nickel layer is 5 μm; (4) step of depositing the nickel nitride layer: nitrogen is introduced into the vacuum chamber at a flow rate of 10 sccm. The gas was added, and the gas pressure in the vacuum chamber was adjusted to 1.0 Pa. Under the conditions that the argon flow rate was 20 sccm, the nitrogen flow rate was 48 sccm, the gas pressure in the vacuum chamber was 1.0 Pa, the substrate bias was -60 V, the direct current of the nickel target power supply was 0.5 A, the pulse amplitude of the nickel target power supply was 900 V, the pulse width of the nickel target power supply was 220 μs, and the pulse frequency of the nickel target power supply was 50 Hz, a nickel nitride layer was deposited on the surface of the nickel layer; wherein the deposition time of the nickel nitride layer was 80 min, and the thickness of the nickel nitride layer was 7 μm; (5 ) Step of depositing chromium nitride: adjusting the DC current of the chromium target power supply to 0.5A, adjusting the pulse amplitude of the chromium target power supply to 900V, adjusting the pulse width of the chromium target power supply to 220μs, adjusting the pulse frequency of the chromium target power supply to 50Hz, and depositing a chromium nitride layer on the surface of the nickel nitride layer under the conditions of an argon flow rate of 20sccm, a nitrogen flow rate of 5sccm, a gas pressure of 1.0Pa in the vacuum chamber, and a substrate bias of -65V; wherein the deposition time of the chromium nitride layer is 120min, and the thickness of the chromium nitride layer is 10μm.

[0087] In summary, the coating method for the surface of an aluminum alloy provided in the embodiment of the present invention is as follows: first, the aluminum alloy substrate is ultrasonically cleaned; then, the aluminum alloy substrate after ultrasonic cleaning is ion sputtered for cleaning; then, a nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning; then, a nickel nitride layer is deposited on the surface of the nickel layer; finally, a chromium nitride layer is deposited on the surface of the nickel nitride layer. The embodiment of the present invention can prepare a wear-resistant and corrosion-resistant film on the surface of the aluminum alloy, and the barrier formed by the film between the aluminum alloy substrate and the external environment can effectively protect the aluminum alloy, improve the wear resistance and corrosion resistance of the aluminum alloy surface, and expand the application range of the aluminum alloy.

[0088] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A coating method for aluminum alloy surface, characterized in that: include: Ultrasonic cleaning of the aluminum alloy substrate; The aluminum alloy substrate after ultrasonic cleaning is subjected to ion sputtering cleaning treatment; Depositing a nickel layer on the surface of the ion-cleaned aluminum alloy substrate; Depositing a nickel nitride layer on the surface of the nickel layer; A chromium nitride layer is deposited on the surface of the nickel nitride layer.

2. The coating method for aluminum alloy surface according to claim 1, characterized in that: The ultrasonic cleaning of the aluminum alloy substrate specifically includes: The aluminum alloy substrate is ultrasonically cleaned for 10 to 20 minutes using deionized water at an ultrasonic frequency of 40 kHz.

3. The method for coating the surface of an aluminum alloy according to claim 1 or 2, characterized in that: The ion sputtering cleaning treatment of the aluminum alloy substrate after ultrasonic cleaning specifically includes: The aluminum alloy substrate after ultrasonic cleaning was placed in a vacuum chamber and evacuated to a vacuum degree of 5.0×10 -3 Pa; Argon gas was introduced into the vacuum chamber at a flow rate of 20 sccm, and the pressure in the vacuum chamber was adjusted to 2.5-3.0 Pa; Under the conditions of an argon gas flow rate of 12 sccm and a substrate bias voltage of -500 to -800 V, the aluminum alloy substrate is cleaned by argon ion sputtering for 10 to 20 minutes.

4. The method for coating the surface of an aluminum alloy as claimed in claim 3, characterized in that: The step of depositing a nickel layer on the surface of the aluminum alloy substrate after ion cleaning specifically comprises: The argon gas flow rate was adjusted from 20 sccm to 12 sccm, the gas pressure in the vacuum chamber was adjusted to 0.5-1.0 Pa, the substrate bias voltage was adjusted to -50--65 V, and the DC current of the nickel target power supply was adjusted to 0.45-0.55 A; A nickel layer is deposited on the surface of the aluminum alloy substrate after ion cleaning under the conditions of argon gas flow rate of 10sccm, gas pressure in the vacuum chamber of 1.0Pa, substrate bias of -50 to -65V, DC current of the nickel target power supply of 0.5A, pulse amplitude of 800 to 900V, pulse width of 200 to 220μs, and pulse frequency of 50Hz.

5. The method for coating the surface of an aluminum alloy according to claim 4, characterized in that: The deposition time of the nickel layer is 45 to 65 minutes, and the thickness of the nickel layer is 4 to 5 μm.

6. The method for coating the surface of an aluminum alloy as claimed in claim 4, characterized in that: The step of depositing a nickel nitride layer on the surface of the nickel layer specifically comprises: Nitrogen gas is introduced into the vacuum chamber at a flow rate of 5 to 10 sccm, and the pressure in the vacuum chamber is adjusted to 0.5 to 1.0 Pa; Under the conditions of an argon flow rate of 20 sccm, a nitrogen flow rate of 48 sccm, a gas pressure of 0.5 to 1.0 Pa in a vacuum chamber, a substrate bias of -50 to -60 V, a direct current of a nickel target power supply of 0.5 A, a pulse amplitude of 800 to 900 V, a pulse width of 200 to 220 μs, and a pulse frequency of 50 Hz, a nickel nitride layer is deposited on the surface of the nickel layer.

7. The method for coating the surface of an aluminum alloy according to claim 6, characterized in that: The deposition time of the nickel nitride layer is 65 to 80 minutes, and the thickness of the nickel nitride layer is 5 to 7 μm.

8. The method for coating the surface of an aluminum alloy according to claim 6, characterized in that: The step of depositing a chromium nitride layer on the surface of the nickel nitride layer specifically comprises: The DC current of the chromium target power supply was adjusted to 0.5A, the pulse amplitude was adjusted to 800-900V, the pulse width was adjusted to 200-220μs, and the pulse frequency was adjusted to 50Hz; Under the conditions that an argon flow rate is 20 sccm, a nitrogen flow rate is 5 sccm, a gas pressure in a vacuum chamber is 0.5-1.0 Pa, and a substrate bias voltage is -50--65 V, a chromium nitride layer is deposited on the surface of the nickel nitride layer.

9. The method for coating the surface of an aluminum alloy according to claim 8, characterized in that: The deposition time of the chromium nitride layer is 100 to 120 minutes, and the thickness of the chromium nitride layer is 6 to 10 μm.

Images