Device and method for measuring wall thickness of quartz crucible and application

Abstract

The invention provides a device and a method for measuring the wall thickness of a quartz crucible and application of the device and the method. The measuring device comprises a sound wave generating and processing device and a sound wave transmitting and receiving device; one side of the sound wave transmitting and receiving device is attached to the surface of a quartz crucible sample and used for transmitting sound waves and receiving reflected sound waves, and the other side of the sound wave transmitting and receiving device is connected with the sound wave generating and processing device through a transmission medium. The measuring device provided by the invention can accurately measure the wall thicknesses of different parts of the quartz crucible and obtain the internal defects of the quartz crucible, so that the quartz crucible can be further designed and improved, the defects of silicon crystals are reduced, and the quality of oxygen concentration in the quartz crucible is improved, which is of great significance to growth control of silicon single crystals.

Description

Technical Field

[0001] The invention belongs to the technical field of measuring devices and relates to a measuring device, a measuring method and an application of the wall thickness of a quartz crucible. Background Art

[0002] With the development of the integrated circuit industry, higher requirements are placed on the purity, high uniformity, high integrity and large diameter of silicon single crystal materials. The quartz crucible has a direct impact on the heat conduction and stability during the crystal growth process, which has a significant impact on the defects of the crystal. At the same time, the oxygen in the quartz crucible is also the main source of oxygen in the crystal, so the control of oxygen concentration also depends on the control of the quartz crucible. At present, most of the growth of 300mm silicon single crystals uses quartz crucibles containing synthetic layers. Therefore, it is possible to measure the wall thickness of the quartz crucible under non-destructive conditions using a device with a specific wavelength, including the measurement of each component layer, which is very meaningful for the growth control of silicon single crystals. Summary of the invention

[0003] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a device, method and application for measuring the wall thickness of a quartz crucible. The measuring device provided by the present invention can accurately measure the wall thickness of different parts of the quartz crucible, and obtain the internal defects of the quartz crucible, so as to further design and improve the quartz crucible, reduce the defects of silicon crystals and improve the quality of oxygen concentration in the quartz crucible, which is of great significance to the growth control of silicon single crystals.

[0004] To achieve this object, the present invention adopts the following technical solutions:

[0005] In a first aspect, the present invention provides a device for measuring the wall thickness of a quartz crucible, the device comprising a sound wave generating and processing device and a sound wave transmitting and receiving device.

[0006] One side of the sound wave transmitting and receiving device is attached to the surface of the quartz crucible sample for transmitting sound waves and receiving reflected sound waves, and the other side is connected to the sound wave generating and processing device through a transmission medium.

[0007] The measuring device provided by the present invention can accurately measure the wall thickness of different parts of the quartz crucible, and obtain the internal defects of the quartz crucible, so as to further design and improve the quartz crucible, reduce the defects of silicon crystals and improve the quality of oxygen concentration in the quartz crucible, which is of great significance to the growth control of silicon single crystals. Preferably, the quartz crucible sample consists of an inner layer, an intermediate layer and an outer layer.

[0008] Preferably, the inner layer is an artificial synthetic quartz layer.

[0009] Preferably, the middle layer is a natural quartz sand layer.

[0010] Preferably, the inner layer has a higher density than the middle layer.

[0011] Preferably, the middle layer contains bubbles, and the average size of the bubbles is smaller than the thickness of the middle layer.

[0012] Preferably, the outer layer is any one of a natural quartz sand layer, a reactive quartz layer or a quartz coating.

[0013] Preferably, a coupling layer is provided on the surface of the quartz crucible to which the acoustic wave transmitting and receiving device and the quartz crucible sample are bonded, so as to exclude air between the acoustic wave transmitting and receiving device and the quartz crucible sample and achieve close bonding.

[0014] Preferably, the coupling layer has a thickness of 0.01-1 mm, preferably 0.05-0.2 mm.

[0015] Preferably, the coupling layer is made of deionized water or aqueous polymer gel.

[0016] Preferably, the wavelength range of the sound waves emitted by the sound wave emitting and receiving device is 0.001-35 mm, preferably 0.01-0.35 mm.

[0017] Preferably, the sound wave generation and processing device is an electric energy and sound wave converter, which is a transducer that uses the piezoelectric effect of materials to achieve the conversion of electric energy and sound energy, and has the function of converting electric energy and mechanical sound energy into each other, thereby achieving the generation and processing of sound waves.

[0018] Preferably, the sound wave transmitting and receiving device is a sound wave transmitting and receiving probe.

[0019] Preferably, the transmission medium is a transmission line.

[0020] In a second aspect, the present invention provides a method for measuring the wall thickness of a quartz crucible, wherein the measuring method is performed using the measuring device described in the first aspect, and the measuring method comprises the following steps:

[0021] A quartz crucible sample is selected and then pre-treated.

[0022] The pre-treated quartz crucible sample is fitted to one side of the acoustic wave transmitting and receiving device, and the acoustic wave generating and processing device is started to apply a current pulse to the acoustic wave transmitting and receiving device, so that the acoustic wave transmitting and receiving device emits acoustic waves and receives reflected acoustic waves.

[0023] The obtained sound waves are processed according to the sound wave generation and processing device to obtain measurement data.

[0024] Preferably, the pre-treatment includes the steps of surface cleaning and degreasing.

[0025] Preferably, after the surface is purged, the roughness of the surface flattened area of ​​the quartz crucible sample is less than Ra2.5 μm.

[0026] Preferably, the degreasing method includes acid washing or alkali washing.

[0027] Preferably, before the pre-treated quartz crucible sample is attached to one side of the acoustic wave transmitting and receiving device, a coupling layer is firstly coated on the attaching surface of the quartz crucible sample.

[0028] Preferably, the coating method comprises the following steps:

[0029] Apply deionized water or aqueous polymer gel to the fitting surface of the quartz crucible sample.

[0030] Preferably, the measuring method comprises the following steps:

[0031] Select a flat quartz crucible sample with a surface shape of any one of rectangle, square or circle, and the sample surface area is greater than 15cm 2 .

[0032] The surface of the quartz crucible sample is purged so that the roughness of the surface flattened area of ​​the sample is less than Ra2.5 μm.

[0033] Remove the surface grease of the quartz crucible sample by acid washing or alkaline washing.

[0034] Deionized water or aqueous polymer gel is brushed on the surface of the quartz crucible sample using a soft brush, thereby forming a coupling layer with a thickness of 0.01-1 mm on the bonding surface of the quartz crucible sample and the acoustic wave transmitting and receiving device, and then the acoustic wave transmitting and receiving device is bonded.

[0035] By starting the sound wave generating and processing device, a current pulse is applied to the sound wave transmitting and receiving device, so that the sound wave transmitting and receiving device emits a sound wave with a wavelength of 0.001-35mm, receives the reflected sound wave, and then transmits it to the sound wave generating and processing device through the transmission line.

[0036] The data is processed according to the sound wave generating and processing device to obtain the wall thickness data.

[0037] In a third aspect, the present invention provides an application of the device for measuring the wall thickness of a quartz crucible as described in the first aspect, wherein the device is applied in the semiconductor field.

[0038] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0039] Compared with the prior art, the present invention has the following beneficial effects:

[0040] The measuring device provided by the present invention can accurately measure the wall thickness of different parts of the quartz crucible under non-destructive conditions, and obtain the internal defects of the quartz crucible, so as to further design and improve the quartz crucible, reduce the defects of silicon crystals and improve the quality of oxygen concentration in the quartz crucible, which is of great significance to the growth control of silicon single crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 Schematic diagram of the measuring device provided in Example 1 of the present invention.

[0042] Figure 2 This is a schematic diagram of the process flow of the measurement method provided in Example 1 of the present invention.

[0043] Among them, 1-electric energy and sound wave converter; 2-sound wave transmitting and receiving probes; 3-transmission line; 4-quartz crucible sample. DETAILED DESCRIPTION

[0044] It should be understood that, in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0045] It should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "disposed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0046] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0047] In a specific embodiment, the present invention provides a device for measuring the wall thickness of a quartz crucible, wherein the device comprises a sound wave generating and processing device and a sound wave transmitting and receiving device.

[0048] One side of the sound wave transmitting and receiving device is attached to the surface of the quartz crucible sample for transmitting sound waves and receiving reflected sound waves, and the other side is connected to the sound wave generating and processing device through a transmission medium.

[0049] The measuring device provided by the present invention can accurately measure the wall thickness of different parts of the quartz crucible and obtain the internal defects of the quartz crucible, so as to further design and improve the quartz crucible, reduce the defects of silicon crystals and improve the quality of oxygen concentration in the quartz crucible, which is of great significance to the growth control of silicon single crystals.

[0050] In the present invention, since the various layers in the quartz crucible sample have different densities, different reflections of the sound waves will be generated at the interfaces between the layers. Therefore, the wall thickness of the quartz crucible can be accurately determined by detecting the reflected sound waves.

[0051] It should be noted that the sound wave generating and processing device can not only generate sound waves, but also identify and process changes in reflected sound waves.

[0052] Furthermore, the quartz crucible sample is composed of an inner layer, a middle layer and an outer layer. It should be noted that the inner layer refers to a layer structure close to the inner cavity of the quartz crucible.

[0053] Furthermore, the inner layer is an artificial synthetic quartz layer.

[0054] It should be noted that the artificial synthetic quartz layer has high purity and good density.

[0055] Furthermore, the middle layer is a natural quartz sand layer.

[0056] Preferably, the inner layer has a higher density than the middle layer.

[0057] Preferably, the middle layer contains bubbles, and the average size of the bubbles is smaller than the thickness of the middle layer.

[0058] It should be noted that there are bubbles distributed in the middle layer. When the sound waves emitted by the sound wave transmitting and receiving device are transmitted to the bubbles, different reflected waves will occur. By analyzing the reflected waves, the location, quantity, size and other data of the bubbles can be further quantified, and then the quality of the quartz crucible can be judged.

[0059] Furthermore, the outer layer is any one of a natural quartz sand layer, a reactive quartz layer or a quartz coating.

[0060] It should be noted that the reactive quartz layer is a layer formed by quartz sand after being subjected to high temperature.

[0061] Furthermore, the porosity of the quartz coating is smaller than that of the middle layer or the inner layer.

[0062] Furthermore, a coupling layer is provided on the surface of the quartz crucible to which the acoustic wave transmitting and receiving device and the quartz crucible sample are bonded, so as to exclude air between the acoustic wave transmitting and receiving device and the quartz crucible sample and achieve close bonding.

[0063] Further, the thickness of the coupling layer is 0.01-1 mm, for example, 0.01 mm, 0.05 mm, 0.1 mm, 0.3 mm, 0.5 mm, 0.7 mm, 0.9 mm or 1 mm, preferably 0.05-0.2 mm, but not limited to the listed values, other values ​​not listed in the range are also applicable.

[0064] In the present invention, a coupling layer with a suitable thickness helps to eliminate interference and misjudgment of reflected waves.

[0065] Furthermore, the coupling layer is made of deionized water or aqueous polymer gel.

[0066] Further, the wavelength range of the sound waves emitted by the sound wave transmitting and receiving device is 0.001-35 mm, for example, it can be 0.001 mm, 0.01 mm, 0.1 mm, 1 mm, 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm or 35 mm, preferably 0.01-0.35 mm. However, it is not limited to the listed values, and other values ​​not listed in the numerical range are also applicable.

[0067] In the present invention, the wavelength of the sound wave emitted by the sound wave transmitting and receiving device can be selected according to the structure of different quartz crucibles. If the inner layer thickness of the quartz crucible is measured, the wavelength of the sound wave is 0.01mm-0.05mm, if the middle layer thickness of the quartz crucible is measured, the wavelength of the sound wave is 0.1mm-0.3mm, and if the outer layer thickness of the quartz crucible is measured, the wavelength of the sound wave is 0.05-0.1mm.

[0068] Furthermore, the sound wave generating and processing device is an electric energy and sound wave converter.

[0069] It should be noted that the electric energy and sound wave converter is a transducer that uses the piezoelectric effect of the material to achieve the conversion of electric energy and sound energy. It has the function of converting electric energy and mechanical sound energy into each other, thereby achieving the generation and processing of sound waves.

[0070] Furthermore, the sound wave transmitting and receiving device is a sound wave transmitting and receiving probe.

[0071] Furthermore, the transmission medium is a transmission line.

[0072] In another specific embodiment, the present invention provides a method for measuring the wall thickness of a quartz crucible, wherein the measuring method is performed using the measuring device as described above, and the measuring method comprises the following steps:

[0073] A quartz crucible sample is selected and then pre-treated.

[0074] The pre-treated quartz crucible sample is fitted to one side of the acoustic wave transmitting and receiving device, and the acoustic wave generating and processing device is started to apply a current pulse to the acoustic wave transmitting and receiving device, so that the acoustic wave transmitting and receiving device emits acoustic waves and receives reflected acoustic waves.

[0075] The obtained sound waves are processed according to the sound wave generation and processing device to obtain measurement data.

[0076] The measuring method provided by the present invention has a simple process, and the measuring data can be obtained by only detecting the reflected sound waves, and the measuring result is accurate.

[0077] Furthermore, the pre-treatment includes the steps of surface blowing and degreasing.

[0078] Furthermore, after the surface is purged, the roughness of the surface flattened area of ​​the quartz crucible sample is less than Ra2.5 μm, for example, it can be Ra2 μm, Ra1.5 μm, Ra1 μm or Ra0.5 μm, etc. However, it is not limited to the listed values, and other values ​​not listed in the numerical range are also applicable.

[0079] Furthermore, the grease removal method includes acid washing or alkali washing.

[0080] In the present invention, the acid used for pickling is not specifically limited, and illustratively, it can be hydrochloric acid, dilute sulfuric acid, phosphoric acid or nitric acid, etc. The alkali used for alkali washing is not limited, and illustratively, it can be sodium hydroxide, potassium hydroxide, sodium carbonate or sodium bicarbonate, etc.

[0081] Furthermore, before the pre-treated quartz crucible sample is bonded to one side of the acoustic wave transmitting and receiving device, a coupling layer is firstly coated on the bonding surface of the quartz crucible sample.

[0082] Furthermore, the coating method comprises the following steps:

[0083] Apply deionized water or aqueous polymer gel to the fitting surface of the quartz crucible sample.

[0084] Furthermore, the measuring method comprises the following steps:

[0085] Select a flat quartz crucible sample with a surface shape of any one of rectangle, square or circle, and the sample surface area is greater than 15cm 2(For example, it can be 20cm 2 、25cm 2 or 30cm 2 wait).

[0086] The surface of the quartz crucible sample is purged so that the roughness of the surface flattened area of ​​the sample is less than Ra2.5 μm.

[0087] Remove the surface grease of the quartz crucible sample by acid washing or alkaline washing.

[0088] Deionized water or aqueous polymer gel is brushed on the surface of the quartz crucible sample using a soft brush, thereby forming a coupling layer with a thickness of 0.01-1 mm on the bonding surface of the quartz crucible sample and the acoustic wave transmitting and receiving device, and then the acoustic wave transmitting and receiving device is bonded.

[0089] By starting the sound wave generating and processing device, a current pulse is applied to the sound wave transmitting and receiving device, so that the sound wave transmitting and receiving device emits a sound wave with a wavelength of 0.001-35mm, receives the reflected sound wave, and then transmits it to the sound wave generating and processing device through the transmission line.

[0090] The data is processed according to the sound wave generating and processing device to obtain the wall thickness data.

[0091] It should be noted that the quartz crucible samples used in the following embodiments are the same, all of which are flat quartz crucible sample fragments consisting of an inner layer, a middle layer and an outer layer, with a rectangular surface shape and a sample surface area of ​​20 cm 2 , wherein the inner layer is a high-purity artificial synthetic quartz layer, the middle layer is a high-purity natural quartz sand layer, and the outer layer is a high-purity quartz coating; bubbles are distributed in the middle layer.

[0092] Example 1

[0093] This embodiment provides a device for measuring the wall thickness of a quartz crucible. The schematic diagram of the device is shown in FIG. Figure 1 As shown, a coupling layer with a thickness of 0.1 mm and made of deionized water is provided on the inner surface of the quartz crucible sample 4 , and the measuring device includes an electric energy and sound wave converter 1 and a sound wave transmitting and receiving probe 2 .

[0094] One side of the sound wave transmitting and receiving probe 2 is attached to the coupling layer for transmitting sound waves and receiving reflected sound waves, and the other side is connected to the electric energy and sound wave converter 1 through a transmission line 3 .

[0095] The wavelength of the sound waves emitted by the sound wave emitting and receiving probe 2 is 0.001-35 mm.

[0096] This embodiment also provides a method for measuring the wall thickness of a quartz crucible, and a schematic diagram of the process flow is shown in FIG. Figure 2 As shown, the measuring method adopts the measuring device as described above to perform the measurement, and the measuring method comprises the following steps:

[0097] (1) The surface of the quartz crucible sample is purged so that the roughness of the surface flattened area of ​​the sample is less than Ra2.5 μm.

[0098] (2) Remove the surface grease of the quartz crucible sample by pickling.

[0099] (3) Using a soft brush, apply deionized water on the surface of the quartz crucible sample, thereby forming a coupling layer with a thickness of 0.1 mm on the bonding surface of the quartz crucible sample and the acoustic wave transmitting and receiving probe, and then bonding the acoustic wave transmitting and receiving probe.

[0100] (4) Measurement: By starting the electric energy and sound wave converter, a current pulse is applied to the sound wave transmitting and receiving probe, so that the sound wave transmitting and receiving probe emits a sound wave with a wavelength of 0.1-1 mm, receives the reflected sound wave, and then transmits it to the electric energy and sound wave converter through the transmission line.

[0101] (5) Data is processed based on the electrical energy and acoustic wave converter to obtain wall thickness data.

[0102] Example 2

[0103] The difference between this embodiment and embodiment 1 is that the thickness of the coupling layer is 0.01 mm.

[0104] The remaining parameters and structures remain the same as those in Example 1.

[0105] Example 3

[0106] The difference between this embodiment and embodiment 1 is that the thickness of the coupling layer is 1 mm.

[0107] The remaining parameters and structures remain the same as those in Example 1.

[0108] Example 4

[0109] The difference between this embodiment and Embodiment 1 is that no coupling layer is provided.

[0110] The remaining parameters and structures remain the same as those in Example 1.

[0111] Comparative Example 1

[0112] This comparative example provides a measurement method, comprising the following steps:

[0113] The quartz crucible sample is cut and polished, and then directly measured using a mechanical ruler

[0114] Performance Testing

[0115] The measurement data provided by the above embodiments and comparative examples are statistically analyzed, and the statistical results are shown in Table 1.

[0116] Table 1

[0117]

[0118] analyze:

[0119] As can be seen from the above table, the measuring device provided by the present invention can measure the wall thickness and internal defects of different parts of the quartz crucible, and quantify its important indicators, including but not limited to the location, number, size, etc. of the bubbles, so that the quartz crucible can be designed and improved, and the quality of the crystal defects and oxygen concentration can be improved.

[0120] It can be seen from Example 1 and Examples 2-4 that a coupling layer of appropriate thickness is helpful for the accuracy of measurement. If the coupling layer is not provided, the result may be misjudged.

[0121] It can be seen from Example 1 and Comparative Example 1 that, compared with the measuring device and the measuring method provided by the prior art, the present invention can measure accurately and simply and conveniently.

[0122] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A device for measuring the wall thickness of a quartz crucible, characterized in that: The measuring device includes a sound wave generating and processing device and a sound wave transmitting and receiving device; One side of the sound wave transmitting and receiving device is attached to the surface of the quartz crucible sample for transmitting sound waves and receiving reflected sound waves, and the other side is connected to the sound wave generating and processing device through a transmission medium.

2. The measuring device according to claim 1, characterized in that The quartz crucible sample consists of an inner layer, a middle layer and an outer layer; Preferably, the inner layer is a synthetic quartz layer; Preferably, the middle layer is a natural quartz sand layer; Preferably, the density of the inner layer is higher than that of the middle layer; Preferably, the middle layer contains bubbles, and the average size of the bubbles is smaller than the thickness of the middle layer; Preferably, the outer layer is any one of a natural quartz sand layer, a reactive quartz layer or a quartz coating.

3. The measuring device according to claim 1 or 2, characterized in that: A coupling layer is provided on the surface of the quartz crucible on which the acoustic wave transmitting and receiving device and the quartz crucible sample are bonded, so as to exclude air between the acoustic wave transmitting and receiving device and the quartz crucible sample and achieve close bonding; Preferably, the thickness of the coupling layer is 0.01-1 mm, preferably 0.05-0.2 mm; Preferably, the coupling layer is made of deionized water or aqueous polymer gel.

4. The measuring device according to any one of claims 1 to 3, characterized in that: The wavelength range of the sound waves emitted by the sound wave emitting and receiving device is 0.001-35 mm, preferably 0.01-0.35 mm; Preferably, the sound wave generating and processing device is an electric energy and sound wave converter; preferably, the sound wave transmitting and receiving device is a sound wave transmitting and receiving probe; Preferably, the transmission medium is a transmission line.

5. A method for measuring the wall thickness of a quartz crucible, characterized in that: The measuring method is performed by using the measuring device according to any one of claims 1 to 4, and the measuring method comprises the following steps: Select a quartz crucible sample and then perform pretreatment; The pre-treated quartz crucible sample is attached to one side of the acoustic wave transmitting and receiving device, and the acoustic wave generating and processing device is started to apply a current pulse to the acoustic wave transmitting and receiving device, so that the acoustic wave transmitting and receiving device emits acoustic waves and receives reflected acoustic waves; The obtained sound waves are processed according to the sound wave generation and processing device to obtain measurement data.

6. The measuring method according to claim 5, characterized in that: The pre-treatment includes the steps of surface cleaning and degreasing.

7. The measuring method according to claim 6, characterized in that: After the surface is purged, the roughness of the surface flattened area of ​​the quartz crucible sample is less than Ra2.5 μm; Preferably, the degreasing method includes acid washing or alkali washing.

8. The measuring method according to any one of claims 5 to 7, characterized in that: Before the pre-treated quartz crucible sample is attached to one side of the acoustic wave transmitting and receiving device, a coupling layer is firstly coated on the attachment surface of the quartz crucible sample; The coating method comprises the following steps: Apply deionized water or aqueous polymer gel to the fitting surface of the quartz crucible sample.

9. The measuring method according to any one of claims 5 to 8, characterized in that: The measuring method comprises the following steps: Select a flat quartz crucible sample with a surface shape of any one of rectangle, square or circle, and the sample surface area is greater than 15cm 2 ; The surface of the quartz crucible sample is purged so that the roughness of the surface flattened area of ​​the sample is less than Ra2.5μm; Remove grease from the surface of the quartz crucible sample by acid or alkaline washing; Using a soft brush, deionized water or aqueous polymer gel is brushed on the surface of the quartz crucible sample, thereby forming a coupling layer with a thickness of 0.01-1 mm on the bonding surface of the quartz crucible sample and the acoustic wave transmitting and receiving device, and then bonding the acoustic wave transmitting and receiving device; By starting the sound wave generating and processing device, a current pulse is applied to the sound wave transmitting and receiving device, so that the sound wave transmitting and receiving device emits a sound wave with a wavelength of 0.001-35 mm, receives the reflected sound wave, and then transmits it to the sound wave generating and processing device through the transmission line; The data is processed according to the sound wave generating and processing device to obtain the wall thickness data.

10. An application of the device for measuring the wall thickness of a quartz crucible according to any one of claims 1 to 4, characterized in that: The measuring device is used in the semiconductor field.

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