X-ray generating device

Abstract

The invention discloses an X-ray generating device. The device comprises a fixed copper block, a rotating rotor, a rotating part, a plurality of micro-nano structure anode targets, an electronic gun and a control unit, the rotary rotor and the fixed copper block are coaxially arranged; a plurality of micro-nano structure anode targets are arranged on the rotating rotor in the axial direction, and the distances between the plurality of micro-nano structure anode targets and the axis of the rotating rotor are equal and are all first distances; the fixed copper block is axially provided with a first channel, the distance between the first channel and the axis of the fixed copper block is a second distance, and the first distance is equal to the second distance; each micro-nano structure anode target is in contact with the end surface of the fixed copper block; the emitting end of the electron gun and the first channel are located on the same horizontal line; the rotating component is connected with the axis of the rotating rotor and drives the rotating rotor to rotate along the axis; the control unit is connected with the rotating part and the electronic gun and used for controlling rotation of the rotating part and on-off of the electronic gun. The device is good in performance, small in size and good in heat dissipation.

Description

Technical Field

[0001] The present invention relates to the field of X-ray sources, and more particularly to an X-ray generating device. Background Art

[0002] At present, the main principle of generating X-rays is that the electron beam emitted by the cathode bombards the metal target after high-voltage acceleration. The electron beam interacts with the target and its kinetic energy is converted into heat energy and X-rays. With the development of science and technology and the growth of human social needs, higher requirements are put forward for the development of a type of portable X-ray generating device that can achieve miniaturization, micro-focusing and high throughput.

[0003] It is difficult for traditional X-ray generators to achieve miniaturization, micro-focusing and high flux at the same time. For X-ray generators that focus on micro-focusing, they usually face heat dissipation problems, resulting in poor X-ray output performance and insufficient output X-ray dose. At the same time, traditional X-ray generators are large in size and cannot meet the needs of portable devices for device miniaturization.

[0004] The prior art discloses an X-ray generating device. The device comprises: an electron gun that emits an electron beam; a rotating anode unit that has a target that receives the electron beam and generates X-rays, and is configured to rotate the target; a magnetic lens that has a coil that is configured to generate a magnetic force acting on the electron beam between the electron gun and the target; and a wall portion that is arranged between the target and the coil in a manner facing the target. The wall portion is formed with: an electron passage hole through which the electron beam passes, and a flow path formed in a manner in which a coolant flows. The structure of the device is relatively complex and the volume is relatively large, and the focusing property of the electron beam is required to be high. Summary of the invention

[0005] Aiming at the defects of the prior art X-ray generating device, which is large in size, poor in performance and poor in heat dissipation, the present invention provides an X-ray generating device with good performance, small in size and good heat dissipation.

[0006] The primary purpose of the present invention is to solve the above technical problems. The technical solution of the present invention is as follows:

[0007] An X-ray generating device, comprising: a fixed copper block, a rotating rotor, a rotating component, a plurality of micro-nano structure anode targets, an electron gun, and a control unit;

[0008] The rotating rotor and the fixed copper block are coaxially arranged; a plurality of micro-nano structure anode targets are axially arranged on the rotating rotor, and the plurality of micro-nano structure anode targets are at the same distance from the axis of the rotating rotor, which is the first distance;

[0009] The fixed copper block is provided with a first channel along the axial direction, the distance between the first channel and the axis of the fixed copper block is a second distance, and the first distance and the second distance are equal; each of the micro-nanostructure anode targets is in contact with the end surface of the fixed copper block;

[0010] The emission end of the electron gun is located on the same horizontal line as the first channel;

[0011] The rotating component is connected to the axis of the rotating rotor, driving the rotating rotor to rotate along the axis;

[0012] The control unit is connected to the rotating component and the electron gun respectively, and is used to control the rotation of the rotating component and the switch of the electron gun.

[0013] Further, the rotating components include: a motor, a coupling;

[0014] One end of the coupling is connected to the rotating shaft of the motor, and the other end of the coupling is connected to the axis of the rotating rotor; the control unit is connected to the control end of the motor.

[0015] Furthermore, the material of the rotating rotor is any one of molybdenum, tungsten, niobium, tantalum, rhenium or their alloys, and the material of the micro-nanostructure anode target is any one of molybdenum, tungsten, copper, gold, silver, rhodium and chromium.

[0016] Furthermore, the micro-nanostructure anode target is connected to the rotating rotor via a tungsten needle.

[0017] Further, the control unit includes: a bias circuit unit, a bandgap reference source unit, a power supply module, a clock unit, a temperature monitoring module, and a temperature sensor;

[0018] The temperature sensor is installed on the fixed copper block, and the output end of the temperature sensor is connected to the input end of the temperature monitoring module; the output end of the temperature monitoring module is connected to the input end of the clock unit, and the output end of the clock unit is connected to the input end of the electron gun and the input end of the rotating component;

[0019] Further, the temperature monitoring module includes: a thirty-second MOS tube M32, a thirty-third MOS tube M33, a thirty-fourth MOS tube M34, a thirty-fifth MOS tube M35, a thirty-sixth MOS tube M36, a thirty-seventh MOS tube M37, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a third Schmitt trigger I21, a fourth inverter I22, an operational amplifier I23, a first current source IBN, a second current source IBP, an eighth MOS capacitor C8, and a ninth MOS capacitor C9;

[0020] The other end of the eleventh resistor R11 is connected to one end of the twelfth resistor R12, the second end of the thirty-second MOS tube M32, and the first end of the thirty-third MOS tube M33. The other end of the twelfth resistor R12 is connected to one end of the thirteenth resistor R13, the second end of the thirty-fourth MOS tube M34, and the first end of the thirty-fifth MOS tube M35. The inverting input end of the operational amplifier I23 is connected to the first end of the thirty-second MOS tube M32, the second end of the thirty-third MOS tube M33, the first end of the thirty-fourth MOS tube M34, and the second end of the thirty-fifth MOS tube M35. The other end of the fourteenth resistor R14 is connected to one end of the eighth MOS capacitor C8 and the non-inverting input end of the operational amplifier I23. The output end of the operational amplifier I23 is connected to the gate end of the thirty-sixth MOS tube M36. , the gate end of the thirty-seventh MOS tube M37 is connected, the other end of the second current source IBP is connected to the first end of the thirty-sixth MOS tube M36, the second end of the thirty-seventh MOS tube M37 is connected to one end of the first current source IBN, the second end of the thirty-sixth MOS tube M36 is connected to the first end of the thirty-seventh MOS tube M37 and one end of the third Schmitt trigger I21, the other end of the third Schmitt trigger I21 is connected to one end of the ninth MOS capacitor C9, the gate end of the thirty-third MOS tube M33, the gate end of the thirty-fourth MOS tube M34, and one end of the fourth inverter I22, the other end of the thirteenth resistor R13, the other end of the first current source IBN, the other end of the eighth MOS capacitor C8, and the other end of the ninth MOS capacitor C9 are grounded;

[0021] The temperature sensor is connected to one end of the eleventh resistor R11, the other end of the fourth inverter I22 is connected to the gate end of the thirty-second MOS tube M32, the gate end of the thirty-fifth MOS tube M35, and the input end of the clock unit, and the output end of the bandgap reference source unit is connected to one end of the fourteenth resistor R14.

[0022] Further, the clock unit includes: a ring oscillator, a signal control module;

[0023] The signal control module includes: a D flip-flop I7, a fourth inverter I8, a fifth inverter I9, a sixth inverter I10, a seventh inverter I11, an eighth inverter I12, an NOR gate I13, a two-input NAND gate I14, a first buffer I15, a second buffer I16, a first three-input NAND gate I17, a second three-input NAND gate I18, a ninth inverter I19, and a tenth inverter I20;

[0024] The other end of the fourth inverter I8 is connected to the first input end of the NOR gate I13 and the second input end of the two-input NAND gate I14. The output end of the NOR gate I13 is connected to one end of the first buffer I15. The other end of the first buffer I15 is connected to one end of the fifth inverter I9. The other end of the fifth inverter I9 is ​​connected to the second input end of the D flip-flop I7, one end of the tenth inverter I20, and the first input end of the two-input NAND gate I14. The output end of the two-input NAND gate I14 is connected to one end of the second buffer I16. The other end of the second buffer I16 is connected to one end of the sixth inverter I10. The other end of the sixth inverter I10 is connected to the second input end of the NOR gate I13 and the third input end of the second three-input NAND gate I18, the other end of the tenth inverter I20 is connected to the third input end of the first three-input NAND gate I17, the second output end of the D flip-flop I7 is connected to the first input end of the first three-input NAND gate I17, the output end of the first three-input NAND gate I17 is connected to one end of the seventh inverter I11, the output end of the second three-input NAND gate I18 is connected to one end of the eighth inverter I12, and the other end of the ninth inverter I19 is connected to the first input end of the D flip-flop I7;

[0025] The output end of the ring oscillator is connected to one end of the fourth inverter I8, one end of the ninth inverter I19 is connected to the first input end of the second three-input NOT gate I18 and the other end of the fourth inverter I22, the other end of the seventh inverter I11 is connected to the rotating component, the other end of the eighth inverter I12 is connected to the electron gun, and the output end of the bandgap reference source unit is connected to the third input end of the D flip-flop I7, the second input end of the first three-input NAND gate I17, and the second input end of the second three-input NOT gate I18;

[0026] The ring oscillator includes: a first current source IBN, a twenty-sixth MOS tube M26, a twenty-seventh MOS tube M27, a twenty-eighth MOS tube M28, a twenty-ninth MOS tube M29, a thirtieth MOS tube M30, a thirty-first MOS tube M31, a second current source IBP, a level converter I3, a second Schmitt trigger I4, a second inverter I5, a third inverter I6, a second current source IBP, a fifth MOS capacitor C5, a sixth MOS capacitor C6, and a seventh MOS capacitor C7;

[0027] The other end of the second current source IBP is connected to the first end of the twenty-sixth MOS tube M26, the first end of the twenty-seventh MOS tube M27, and the first end of the twenty-eighth MOS tube M28. The second end of the twenty-sixth MOS tube M26 is connected to the gate end of the twenty-seventh MOS tube M27, the first end of the twenty-ninth MOS tube M29, the gate end of the thirtieth MOS tube M30, and one end of the fifth MOS capacitor C5. The second end of the twenty-ninth MOS tube M29, the second end of the thirtieth MOS tube M30, and the second end of the thirty-first MOS tube M31 are connected to one end of the first current source IBN. The second end of the twenty-seventh MOS tube M27 is connected to the gate end of the twenty-eighth MOS tube M28, the first end of the thirtieth MOS tube M30, and the gate end of the thirty-first MOS tube M31. The gate end of the S transistor M31 is connected to one end of the sixth MOS capacitor C6, the second end of the twenty-eighth MOS transistor M28 is connected to the first end of the thirty-first MOS transistor M31, one end of the seventh MOS capacitor C7, and one end of the second Schmitt trigger I4, the other end of the first current source IBN, the other end of the fifth MOS capacitor C5, the other end of the sixth MOS capacitor C6, and the other end of the seventh MOS capacitor C7 are grounded, the other end of the second Schmitt trigger I4 is connected to one end of the second inverter I5, the other end of the second inverter I5 is connected to the gate end of the twenty-sixth MOS transistor M26, the gate end of the twenty-ninth MOS transistor M29, and one end of the third inverter I6, and the other end of the third inverter I6 is connected to the second input end of the level converter I3;

[0028] The output end of the power module is connected to one end of the second current source IBP and the first input end of the level converter I3, the power supply is connected to the third input end of the level converter I3, and the output end of the level converter I3 is connected to one end of the fourth inverter I8.

[0029] Further, the power module includes: a nineteenth MOS tube M19, a twentieth MOS tube M20, a twenty-first MOS tube M21, a twenty-second MOS tube M22, a twenty-third MOS tube M23, a twenty-fourth MOS tube M24, a twenty-fifth MOS tube M25, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a first current source IBN, a third MOS capacitor C3, and a fourth MOS capacitor C4;

[0030] The power supply is connected to the second end of the twenty-third MOS tube M23, the first end of the twenty-fourth MOS tube M24, and the first end of the twenty-fifth MOS tube M25. The gate end of the twenty-third MOS tube M23 is connected to the gate end of the twenty-fourth MOS tube M24. The second end of the twenty-second MOS tube M22 is connected to one end of the third MOS capacitor C3, the gate end of the twenty-fifth MOS tube M25, and the second end of the twenty-fourth MOS tube M24. The other end of the third MOS capacitor C3 is connected to one end of the tenth resistor R10. The other end of the fourth MOS capacitor C4 is grounded. The eighth resistor R8 is connected to the gate end of the twenty-second MOS tube M22. The other end is connected to one end of the ninth resistor R9 and the gate end of the nineteenth MOS tube M19, the first end of the twenty-first MOS tube M21 is connected to the first end of the twenty-third MOS tube M23, the first end of the nineteenth MOS tube M19 is connected to the second end of the twenty-first MOS tube M21, the second end of the twentieth MOS tube M20 is connected to the first end of the twenty-second MOS tube M22, the first end of the nineteenth MOS tube M19 is connected to the second end of the twentieth MOS tube M20 and one end of the first current source IBN, and the other end of the first current source IBN and the other end of the ninth resistor R9 are grounded;

[0031] The other end of the tenth resistor R10 is connected to the second end of the twenty-fifth MOS tube M25, one end of the eighth resistor R8, one end of the fourth MOS capacitor C4, one end of the second current source IBP, and the first input end of the level converter I3; the output end of the bandgap reference source unit is connected to the gate end of the twenty-first MOS tube M21 and the gate end of the twenty-second MOS tube M22; and the gate end of the twentieth MOS tube M20 is connected to the output end of the bandgap reference source unit.

[0032] Furthermore, the bandgap reference source unit includes: a bandgap reference source module, a voltage buffer, and a delay device;

[0033] The bandgap reference source module includes: a seventeenth MOS tube M17, an eighteenth MOS tube M18, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first PNP transistor Q1, a second PNP transistor Q2, and a low power amplifier I8;

[0034] The power supply is connected to the first end of the eighteenth MOS tube M18, the second end of the eighteenth MOS tube M18 is connected to the first end of the seventeenth MOS tube M17, the gate end of the seventeenth MOS tube M17 is connected to the output end of the low power amplifier I8, the other end of the fourth resistor R4 is connected to one end of the second resistor R2 and one end of the third resistor R3, the non-inverting input end of the low power amplifier I8 is connected to the other end of the third resistor R3 and the emitter of the first PNP transistor Q1, the inverting input end of the low power amplifier I8 is connected to the other end of the second resistor R2 and one end of the first resistor R1, the other end of the first resistor R1 is connected to the emitter of the second PNP transistor Q2, the base of the first PNP transistor Q1, the collector of the first PNP transistor Q1, the base of the second PNP transistor Q2, the collector of the second PNP transistor Q2, and the other end of the seventh resistor R7 are grounded;

[0035] The other end of the sixth resistor R6 is connected to one end of the seventh resistor R7 and one end of the fourteenth resistor R14, the other end of the fifth resistor R5 is connected to one end of the sixth resistor R6 and the gate end of the twentieth MOS tube M20, the input end of the voltage buffer and the input end of the delayer are connected to the second end of the seventeenth MOS tube M17, one end of the fourth resistor R4, and one end of the fifth resistor R5, the output end of the voltage buffer is connected to the gate end of the twenty-first MOS tube M21, the output end of the bias circuit unit is connected to the gate end of the eighteenth MOS tube M18, and the output end of the delayer is connected to the third input end of the D trigger I7.

[0036] Further, the bias circuit unit includes: a tenth MOS tube M10, an eleventh MOS tube M11, a twelfth MOS tube M12, a thirteenth MOS tube M13, a fourteenth MOS tube M14, a fifteenth MOS tube M15, a sixteenth MOS tube M16, a second MOS capacitor C2, a first Schmitt trigger I1, and a first inverter I2;

[0037] The power supply is connected to the second end of the tenth MOS tube M10 and the first end of the eleventh MOS tube M11. The gate end of the tenth MOS tube M10 is connected to the gate end of the eleventh MOS tube M11, the first end of the tenth MOS tube M10, and the second end of the twelfth MOS tube M12. The gate end of the twelfth MOS tube M12 is connected to the first end of the twelfth MOS tube M12 and the second end of the thirteenth MOS tube M13. The gate end of the thirteenth MOS tube M13 is connected to the gate end of the fourteenth MOS tube M14 and the gate end of the sixteenth MOS tube M16. The gate end of the eleventh MOS tube M11 is connected to the gate end of the The second end is connected to the first end of the fourteenth MOS tube M14, one end of the second MOS capacitor C2, the second end of the fifteenth MOS tube M15, and one end of the first Schmitt trigger I1; the first end of the fifteenth MOS tube M15 is connected to the first end of the sixteenth MOS tube M16; the gate end of the fifteenth MOS tube M15 is connected to the other end of the first Schmitt trigger I1 and one end of the first inverter I2; the first end of the thirteenth MOS tube M13, the second end of the fourteenth MOS tube M14, the other end of the second MOS capacitor C2, and the second end of the sixteenth MOS tube M16 are grounded;

[0038] The other end of the first inverter I2 is connected to the gate end of the eighteenth MOS transistor M18.

[0039] Compared with the prior art, the present invention has the following beneficial effects:

[0040] The X-ray generating device of the present invention comprises: a fixed copper block, a rotating rotor, a rotating component, a plurality of micro-nano structure anode targets, an electron gun, and a control unit; the rotating rotor and the fixed copper block are coaxially arranged; a plurality of micro-nano structure anode targets are axially arranged on the rotating rotor, and the plurality of micro-nano structure anode targets are at the same distance from the axis of the rotating rotor, which is a first distance; a first channel is axially arranged on the fixed copper block, and the distance between the first channel and the axis of the fixed copper block is a second distance, and the first distance and the second distance are equal; each of the micro-nano structure anode targets contacts the end face of the fixed copper block; the emission end of the electron gun is located on the same horizontal line as the first channel; the rotating component is connected to the axis of the rotating rotor to drive the rotating rotor to rotate along the axis; the control unit is respectively connected to the rotating component and the electron gun, and is used to control the rotation of the rotating component and the switch of the electron gun, so that the heat dissipation capacity of the device is better, and the volume of the device is smaller and the overall performance is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 This is a structural diagram of an X-ray generating device provided in Example 1.

[0042] Figure 2 This is a front view of an X-ray generating device provided in Example 1.

[0043] Figure 3 This is a front view of an X-ray generating device provided in Example 1.

[0044] Figure 4 This is a radial cross-sectional view of an X-ray generating device provided in Example 1.

[0045] Figure 5 This is an axial cross-sectional view of an X-ray generating device provided in Example 1.

[0046] Figure 6 This is a structural diagram of the control unit provided in Example 1.

[0047] Figure 7 This is a circuit diagram of the temperature monitoring module provided in Example 1.

[0048] Figure 8 This is a circuit diagram of the signal control module provided in Example 1.

[0049] Fig. 9 This is a circuit diagram of the ring oscillator provided in Example 1.

[0050] Fig.10 This is a circuit diagram of the power module provided in Example 1.

[0051] Fig.11 This is a circuit diagram of the bandgap reference source module provided in Example 1.

[0052] Fig.12 This is a circuit diagram of the bias circuit unit provided in Example 1.

[0053] Fig.13 This is a circuit diagram of the current source provided in Example 1.

[0054] Fig.14 A structural diagram of a miniaturized X-ray generating device provided in Example 2. DETAILED DESCRIPTION

[0055] The drawings are for illustrative purposes only and should not be construed as limiting the present patent;

[0056] In order to better illustrate the present embodiment, some parts in the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product;

[0057] It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0058] The technical solution of the present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0059] Example 1

[0060] like Figure 1, Figure 2 As shown, an X-ray generating device includes: a fixed copper block 12, a rotating rotor 15, a rotating component, a plurality of micro-nano structure anode targets 16, an electron gun 11, and a control unit;

[0061] The rotating rotor 15 and the fixed copper block 12 are coaxially arranged; a plurality of micro-nano structure anode targets 16 are axially arranged on the rotating rotor 15, and the plurality of micro-nano structure anode targets 16 are at the same distance from the axis of the rotating rotor 15, which is the first distance;

[0062] The fixed copper block 12 is provided with a first channel along the axial direction, the distance between the first channel and the axis of the fixed copper block 12 is a second distance, and the first distance and the second distance are equal; each of the micro-nanostructure anode targets 16 is in contact with the end surface of the fixed copper block 12;

[0063] The emission end of the electron gun 11 is located on the same horizontal line as the first channel;

[0064] The rotating component is connected to the axis of the rotating rotor 15, driving the rotating rotor 15 to rotate along the axis;

[0065] The control unit is connected to the rotating component and the electron gun 11 respectively, and is used to control the rotation of the rotating component and the switch of the electron gun 11 .

[0066] It should be noted that the control unit is used to adjust the period of generating the control signal and adjust the working state of the X-ray tube based on parameters such as the required electron beam density and electron beam voltage.

[0067] Further, the rotating component includes: a motor 13, a coupling 14;

[0068] One end of the coupling 14 is connected to the rotating shaft of the motor 13 , and the other end of the coupling 14 is connected to the axis of the rotating rotor 15 ; the control unit is connected to the control end of the motor 13 .

[0069] In a specific embodiment, Figure 3 As shown, the fixed copper block 12 is a solid entity except for the first channel, and no other channels are provided.

[0070] In a specific embodiment, Figure 4 , Figure 5 As shown, the fixed copper block 12 is provided with a second channel, and the other end of the coupling 14 passes through the second channel and is connected to the axis of the rotating rotor 15 .

[0071] Furthermore, the material of the rotating rotor 15 is any one of molybdenum, tungsten, niobium, tantalum, rhenium or their alloys, and the material of the micro-nanostructure anode target 16 is any one of molybdenum, tungsten, copper, gold, silver, rhodium and chromium.

[0072] It should be noted that the micro-nano structure anode target 16 is a transmissive micro-structure target material, and its structural shape includes but is not limited to cylindrical, prism, conical, pyramidal or a combination thereof, which is used to improve the micro-focusing of X-rays, and enhance the heat dissipation capacity of the target material through the rotation of the rotatable rotor to increase the dose and brightness of the X-rays. The micro-nano structure anode target can adopt a variety of geometric shapes; the characteristic size can be flexibly designed in the range of 1 nanometer to 100 microns, which is convenient for optimization for different application scenarios; the structural parameters can achieve the optimal balance between the micro-focusing, brightness, dose and heat dissipation capacity of the generated radiation according to the specific application requirements.

[0073] It should be noted that the micro-nano structure anode target 16 cooperates with the micron-level first channel to accurately guide the direction of the electron beam, which greatly reduces the focusing requirements of the electron beam. Therefore, the complex focusing device in the traditional X-ray tube can be removed, and only the basic electron emission function is retained, which not only significantly reduces the volume of the electron gun, but also reduces the power consumption of the system. The target size is in the micron level, which significantly reduces the space required for the target while improving the output performance.

[0074] In a specific embodiment, the characteristic dimensions of the micro-nanostructure anode target 16 are in the range of 1 nanometer to 100 micrometers, including but not limited to the characteristic dimensions of its bottom surface and height, for comprehensively optimizing X-ray microfocusing, brightness, dose and heat dissipation capabilities.

[0075] It should be noted that the rotating rotor 15 is made of high temperature resistant material. The micro-nano structure anode target 16 is made of X-ray emitting material.

[0076] Furthermore, the micro-nanostructure anode target 16 is connected to the rotating rotor 15 via a tungsten needle 17 .

[0077] Furthermore, if Figure 6 As shown, the control unit includes: a bias circuit unit, a bandgap reference source unit, a power supply module, a clock unit, a temperature monitoring module, and a temperature sensor;

[0078] The temperature sensor is installed on the fixed copper block, and the output end of the temperature sensor is connected to the input end of the temperature monitoring module; the output end of the temperature monitoring module is connected to the input end of the clock unit, and the output end of the clock unit is connected to the input end of the electron gun and the input end of the rotating component;

[0079] It should be noted that the control unit controls the rotation of the rotatable rotor and the switching cycle of the electron gun through an integrated circuit; monitors the target material temperature, and triggers the over-temperature protection function when the temperature exceeds a preset threshold; and adjusts the rotation speed of the rotatable rotor and the optimal timing of the electron beam switch according to parameters such as the electron beam density and the electron beam voltage.

[0080] It should be noted that chips are used to replace traditional discrete components, and miniaturized high-voltage discrete components are used for the high-voltage parts that the chips cannot carry, thus achieving overall miniaturization of the control circuit and the boost system.

[0081] Furthermore, if Figure 7 As shown, the temperature monitoring module includes: a thirty-second MOS tube M32, a thirty-third MOS tube M33, a thirty-fourth MOS tube M34, a thirty-fifth MOS tube M35, a thirty-sixth MOS tube M36, a thirty-seventh MOS tube M37, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a third Schmitt trigger I21, a fourth inverter I22, an operational amplifier I23, a first current source IBN, a second current source IBP, an eighth MOS capacitor C8, and a ninth MOS capacitor C9;

[0082] The other end of the eleventh resistor R11 is connected to one end of the twelfth resistor R12, the second end of the thirty-second MOS tube M32, and the first end of the thirty-third MOS tube M33. The other end of the twelfth resistor R12 is connected to one end of the thirteenth resistor R13, the second end of the thirty-fourth MOS tube M34, and the first end of the thirty-fifth MOS tube M35. The inverting input end of the operational amplifier I23 is connected to the first end of the thirty-second MOS tube M32, the second end of the thirty-third MOS tube M33, the first end of the thirty-fourth MOS tube M34, and the second end of the thirty-fifth MOS tube M35. The other end of the fourteenth resistor R14 is connected to one end of the eighth MOS capacitor C8 and the non-inverting input end of the operational amplifier I23. The output end of the operational amplifier I23 is connected to the gate end of the thirty-sixth MOS tube M36. , the gate end of the thirty-seventh MOS tube M37 is connected, the other end of the second current source IBP is connected to the first end of the thirty-sixth MOS tube M36, the second end of the thirty-seventh MOS tube M37 is connected to one end of the first current source IBN, the second end of the thirty-sixth MOS tube M36 is connected to the first end of the thirty-seventh MOS tube M37 and one end of the third Schmitt trigger I21, the other end of the third Schmitt trigger I21 is connected to one end of the ninth MOS capacitor C9, the gate end of the thirty-third MOS tube M33, the gate end of the thirty-fourth MOS tube M34, and one end of the fourth inverter I22, the other end of the thirteenth resistor R13, the other end of the first current source IBN, the other end of the eighth MOS capacitor C8, and the other end of the ninth MOS capacitor C9 are grounded;

[0083] The temperature sensor is connected to one end of the eleventh resistor R11, the other end of the fourth inverter I22 is connected to the gate end of the thirty-second MOS tube M32, the gate end of the thirty-fifth MOS tube M35, and the input end of the clock unit, and the output end of the bandgap reference source unit is connected to one end of the fourteenth resistor R14.

[0084] It should be noted that the thirty-sixth MOS tube M36, the thirty-seventh MOS tube M37, the first current source IBN, the second current source IBP, and the third Schmitt trigger I21 constitute a hysteresis comparator, which is used to prevent the micro-nano structure anode target 16 from being overheated, and can effectively reduce interference caused by power supply fluctuations. The module is designed to be low-power and high-precision, and the power consumption and precision are optimized by setting the ratio and size of the eleventh resistor R11, the twelfth resistor R12, the thirteenth resistor R13 and the operational amplifier I23.

[0085] In a specific embodiment, the temperature of the molybdenum target 16 is difficult to monitor directly due to its small size and continuous rotation. Through heat conduction calculation, when the temperature of the molybdenum target is 2000K, the temperature of the molybdenum rotor 15 is about 510K, so the temperature threshold is set to 510K, corresponding to a voltage signal of 4.3V; the recovery threshold is 480K, corresponding to a voltage signal of 4V. The simulation results show that the hysteresis window accuracy is ±0.025V (±2.5K), and the static current is 5μA, which meets the reliability and low power consumption requirements of the X-ray tube. When the voltage is lower than 4.3V (corresponding to 510K), the comparator outputs a high level and the system works normally; when the voltage exceeds 4.3V, the comparator flips to a low level, and the output signal OUT2 flips, entering the signal control module to turn off the electron beam and the target material rotation switch. When the voltage drops to 4V (480K), the comparator returns to a high level and the system restarts, thereby effectively achieving stable control of the temperature.

[0086] It should be noted that the temperature monitoring module is used to monitor the state of the target material.

[0087] Further, the clock unit includes: a ring oscillator, a signal control module;

[0088] like Figure 8 As shown, the signal control module includes: a D flip-flop I7, a fourth inverter I8, a fifth inverter I9, a sixth inverter I10, a seventh inverter I11, an eighth inverter I12, an NOR gate I13, a two-input NAND gate I14, a first buffer I15, a second buffer I16, a first three-input NAND gate I17, a second three-input NAND gate I18, a ninth inverter I19, and a tenth inverter I20;

[0089] The other end of the fourth inverter I8 is connected to the first input end of the NOR gate I13 and the second input end of the two-input NAND gate I14. The output end of the NOR gate I13 is connected to one end of the first buffer I15. The other end of the first buffer I15 is connected to one end of the fifth inverter I9. The other end of the fifth inverter I9 is ​​connected to the second input end of the D flip-flop I7, one end of the tenth inverter I20, and the first input end of the two-input NAND gate I14. The output end of the two-input NAND gate I14 is connected to one end of the second buffer I16. The other end of the second buffer I16 is connected to one end of the sixth inverter I10. The other end of the sixth inverter I10 is connected to the second input end of the NOR gate I13 and the third input end of the second three-input NAND gate I18, the other end of the tenth inverter I20 is connected to the third input end of the first three-input NAND gate I17, the second output end of the D flip-flop I7 is connected to the first input end of the first three-input NAND gate I17, the output end of the first three-input NAND gate I17 is connected to one end of the seventh inverter I11, the output end of the second three-input NAND gate I18 is connected to one end of the eighth inverter I12, and the other end of the ninth inverter I19 is connected to the first input end of the D flip-flop I7;

[0090] The output end of the ring oscillator is connected to one end of the fourth inverter I8, one end of the ninth inverter I19 is connected to the first input end of the second three-input NOT gate I18 and the other end of the fourth inverter I22, the other end of the seventh inverter I11 is connected to the rotating component, the other end of the eighth inverter I12 is connected to the electron gun, and the output end of the bandgap reference source unit is connected to the third input end of the D flip-flop I7, the second input end of the first three-input NAND gate I17, and the second input end of the second three-input NOT gate I18;

[0091] It should be noted that the signal control module generates two-phase non-overlapping control signals, which are used for target rotation control and electron beam switch respectively to ensure that the electron beam is turned on only after the target rotation is completed. To achieve the protection function, the module introduces the output EN_T of the hysteresis comparator. When EN_T becomes 0 due to over-temperature protection, EN_TARGET will flip to 0 after completing the current pulse cycle to ensure that the target rotation cycle is complete. The control of the electron gun 11 is achieved by turning it on and off immediately without using a trigger. The module design meets the requirements of low power consumption, precise frequency and stable control, and verifies the accuracy of the control logic of EN_TARGET and EN_ELECTRON_BEAM under over-temperature protection through simulation.

[0092] like Fig. 9As shown, the ring oscillator includes: a first current source IBN, a twenty-sixth MOS tube M26, a twenty-seventh MOS tube M27, a twenty-eighth MOS tube M28, a twenty-ninth MOS tube M29, a thirtieth MOS tube M30, a thirty-first MOS tube M31, a second current source IBP, a level converter I3, a second Schmitt trigger I4, a second inverter I5, a third inverter I6, a second current source IBP, a fifth MOS capacitor C5, a sixth MOS capacitor C6, and a seventh MOS capacitor C7;

[0093] The other end of the second current source IBP is connected to the first end of the twenty-sixth MOS tube M26, the first end of the twenty-seventh MOS tube M27, and the first end of the twenty-eighth MOS tube M28. The second end of the twenty-sixth MOS tube M26 is connected to the gate end of the twenty-seventh MOS tube M27, the first end of the twenty-ninth MOS tube M29, the gate end of the thirtieth MOS tube M30, and one end of the fifth MOS capacitor C5. The second end of the twenty-ninth MOS tube M29, the second end of the thirtieth MOS tube M30, and the second end of the thirty-first MOS tube M31 are connected to one end of the first current source IBN. The second end of the twenty-seventh MOS tube M27 is connected to the gate end of the twenty-eighth MOS tube M28, the first end of the thirtieth MOS tube M30, and the gate end of the thirty-first MOS tube M31. The gate end of the S transistor M31 is connected to one end of the sixth MOS capacitor C6, the second end of the twenty-eighth MOS transistor M28 is connected to the first end of the thirty-first MOS transistor M31, one end of the seventh MOS capacitor C7, and one end of the second Schmitt trigger I4, the other end of the first current source IBN, the other end of the fifth MOS capacitor C5, the other end of the sixth MOS capacitor C6, and the other end of the seventh MOS capacitor C7 are grounded, the other end of the second Schmitt trigger I4 is connected to one end of the second inverter I5, the other end of the second inverter I5 is connected to the gate end of the twenty-sixth MOS transistor M26, the gate end of the twenty-ninth MOS transistor M29, and one end of the third inverter I6, and the other end of the third inverter I6 is connected to the second input end of the level converter I3;

[0094] The output end of the power module is connected to one end of the second current source IBP and the first input end of the level converter I3, the power supply is connected to the third input end of the level converter I3, and the output end of the level converter I3 is connected to one end of the fourth inverter I8.

[0095] It should be noted that the twenty-sixth MOS tube M26, the twenty-seventh MOS tube M27, and the twenty-eighth MOS tube M28 are PMOS tubes, and the twenty-ninth MOS tube M29, the thirtieth MOS tube M30, and the thirty-first MOS tube M31 are NMOS tubes. Three inverters with bias current are cascaded, and the IBN and IBP current sources are used to charge and discharge the capacitor C1 or C2 to control the stability of the oscillation frequency and reduce power consumption. Since the power supply fluctuation has a great influence on the output frequency of the ring oscillator, the ring oscillator uses a 1.8V power supply output by the power module to improve the voltage stability. Finally, the oscillator output signal is converted to VCC through the level converter I3 to meet the needs of the signal control module. The simulation shows that when the current source current is 100nA, the static power consumption of the oscillator is only about 300nA; the frequency of the generated periodic signal is about 4.88kHz to 5.586kHz, which meets the design requirements. The instantaneous flip current is controlled at 236.524μA, maintaining good power consumption characteristics and frequency stability.

[0096] It should be noted that the clock unit is used to generate clock signals and control signals.

[0097] Furthermore, if Fig.10 As shown, the power module includes: a nineteenth MOS tube M19, a twentieth MOS tube M20, a twenty-first MOS tube M21, a twenty-second MOS tube M22, a twenty-third MOS tube M23, a twenty-fourth MOS tube M24, a twenty-fifth MOS tube M25, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a first current source IBN, a third MOS capacitor C3, and a fourth MOS capacitor C4;

[0098] The power supply is connected to the second end of the twenty-third MOS tube M23, the first end of the twenty-fourth MOS tube M24, and the first end of the twenty-fifth MOS tube M25. The gate end of the twenty-third MOS tube M23 is connected to the gate end of the twenty-fourth MOS tube M24. The second end of the twenty-second MOS tube M22 is connected to one end of the third MOS capacitor C3, the gate end of the twenty-fifth MOS tube M25, and the second end of the twenty-fourth MOS tube M24. The other end of the third MOS capacitor C3 is connected to one end of the tenth resistor R10. The other end of the fourth MOS capacitor C4 is grounded. The eighth resistor R8 is connected to the gate end of the twenty-second MOS tube M22. The other end is connected to one end of the ninth resistor R9 and the gate end of the nineteenth MOS tube M19, the first end of the twenty-first MOS tube M21 is connected to the first end of the twenty-third MOS tube M23, the first end of the nineteenth MOS tube M19 is connected to the second end of the twenty-first MOS tube M21, the second end of the twentieth MOS tube M20 is connected to the first end of the twenty-second MOS tube M22, the first end of the nineteenth MOS tube M19 is connected to the second end of the twentieth MOS tube M20 and one end of the first current source IBN, and the other end of the first current source IBN and the other end of the ninth resistor R9 are grounded;

[0099] The other end of the tenth resistor R10 is connected to the second end of the twenty-fifth MOS tube M25, one end of the eighth resistor R8, one end of the fourth MOS capacitor C4, one end of the second current source IBP, and the first input end of the level converter I3; the output end of the bandgap reference source unit is connected to the gate end of the twenty-first MOS tube M21 and the gate end of the twenty-second MOS tube M22; and the gate end of the twentieth MOS tube M20 is connected to the output end of the bandgap reference source unit.

[0100] It should be noted that the 19th MOS tube M19, the 20th MOS tube M20, the 21st MOS tube M21, and the 22nd MOS tube M22 are NMOS tubes, and the 23rd MOS tube M23, the 24th MOS tube M24, and the 25th MOS tube M25 are PMOS tubes. The output voltage VOUT is 1.8V, and the accuracy is within the range of ±1%, which meets the design requirements; the response time is 0.6μs, which adapts to the step change of the load current; the total power consumption is 8μA, which meets the low power consumption requirements; the loop gain and phase margin both meet the design requirements, the PM is 68.57°, and the PM is further improved when the load increases; the power supply rejection ratio is greater than 60dB at a frequency of 1kHz, which effectively suppresses the input ripple. The design meets the requirements of output accuracy, load response, power consumption, and power supply rejection.

[0101] It should be noted that the power module is used to provide a stable voltage for the ring oscillator.

[0102] Furthermore, if Fig.11As shown, the bandgap reference source unit includes: a bandgap reference source module, a voltage buffer, and a delay device;

[0103] The bandgap reference source module includes: a seventeenth MOS tube M17, an eighteenth MOS tube M18, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first PNP transistor Q1, a second PNP transistor Q2, and a low power amplifier I8;

[0104] The power supply is connected to the first end of the eighteenth MOS tube M18, the second end of the eighteenth MOS tube M18 is connected to the first end of the seventeenth MOS tube M17, the gate end of the seventeenth MOS tube M17 is connected to the output end of the low power amplifier I8, the other end of the fourth resistor R4 is connected to one end of the second resistor R2 and one end of the third resistor R3, the non-inverting input end of the low power amplifier I8 is connected to the other end of the third resistor R3 and the emitter of the first PNP transistor Q1, the inverting input end of the low power amplifier I8 is connected to the other end of the second resistor R2 and one end of the first resistor R1, the other end of the first resistor R1 is connected to the emitter of the second PNP transistor Q2, the base of the first PNP transistor Q1, the collector of the first PNP transistor Q1, the base of the second PNP transistor Q2, the collector of the second PNP transistor Q2, and the other end of the seventh resistor R7 are grounded;

[0105] The other end of the sixth resistor R6 is connected to one end of the seventh resistor R7 and one end of the fourteenth resistor R14, the other end of the fifth resistor R5 is connected to one end of the sixth resistor R6 and the gate end of the twentieth MOS tube M20, the input end of the voltage buffer and the input end of the delayer are connected to the second end of the seventeenth MOS tube M17, one end of the fourth resistor R4, and one end of the fifth resistor R5, the output end of the voltage buffer is connected to the gate end of the twenty-first MOS tube M21, the output end of the bias circuit unit is connected to the gate end of the eighteenth MOS tube M18, and the output end of the delayer is connected to the third input end of the D trigger I7.

[0106] It should be noted that the bandgap reference source module is used to provide a reference voltage. The bandgap reference source uses the superposition of positive temperature coefficient (PTC) and negative temperature coefficient (NTC) voltages to achieve a reference voltage with a near zero temperature coefficient.

[0107] It should be noted that the delay device outputs a BGOK signal and the voltage buffer outputs a 2.4V voltage.

[0108] Furthermore, if Fig.12As shown, the bias circuit unit includes: a tenth MOS tube M10, an eleventh MOS tube M11, a twelfth MOS tube M12, a thirteenth MOS tube M13, a fourteenth MOS tube M14, a fifteenth MOS tube M15, a sixteenth MOS tube M16, a second MOS capacitor C2, a first Schmitt trigger I1, and a first inverter I2;

[0109] The power supply is connected to the second end of the tenth MOS tube M10 and the first end of the eleventh MOS tube M11. The gate end of the tenth MOS tube M10 is connected to the gate end of the eleventh MOS tube M11, the first end of the tenth MOS tube M10, and the second end of the twelfth MOS tube M12. The gate end of the twelfth MOS tube M12 is connected to the first end of the twelfth MOS tube M12 and the second end of the thirteenth MOS tube M13. The gate end of the thirteenth MOS tube M13 is connected to the gate end of the fourteenth MOS tube M14 and the gate end of the sixteenth MOS tube M16. The gate end of the eleventh MOS tube M11 is connected to the gate end of the The second end is connected to the first end of the fourteenth MOS tube M14, one end of the second MOS capacitor C2, the second end of the fifteenth MOS tube M15, and one end of the first Schmitt trigger I1; the first end of the fifteenth MOS tube M15 is connected to the first end of the sixteenth MOS tube M16; the gate end of the fifteenth MOS tube M15 is connected to the other end of the first Schmitt trigger I1 and one end of the first inverter I2; the first end of the thirteenth MOS tube M13, the second end of the fourteenth MOS tube M14, the other end of the second MOS capacitor C2, and the second end of the sixteenth MOS tube M16 are grounded;

[0110] The other end of the first inverter I2 is connected to the gate end of the eighteenth MOS transistor M18.

[0111] It should be noted that the bias circuit unit is used for initializing power-on.

[0112] In a specific embodiment, Fig.13 As shown, the second current source IBP and the first current source IBN include: an initial MOS tube M0, a first MOS tube M1, a second MOS tube M2, a third MOS tube M3, a fourth MOS tube M4, a fifth MOS tube M5, a sixth MOS tube M6, a seventh MOS tube M7, an eighth MOS tube M8, a ninth MOS tube M9, a first MOS capacitor C1, and an adjustable resistor R0;

[0113] The second end of the initial MOS tube M0 is connected to one end of the adjustable resistor R0, the gate end of the initial MOS tube M0 is connected to the gate end of the first MOS tube M1, the second end of the first MOS tube M1, the gate end of the fourth MOS tube M4, and the first end of the third MOS tube M3, the first end of the first MOS tube M1, the first end of the fourth MOS tube M4, the second end of the fifth MOS tube M5, the other end of the adjustable resistor R0, and grounding, the second end of the fourth MOS tube M4 is connected to the other end of the first MOS capacitor C1 and the gate end of the fifth MOS tube M5, the first end of the fifth MOS tube M5 is connected to the gate end of the first MOS tube M1, the second end of the fourth MOS tube M4, the second end of the fifth MOS tube M5, the other end of the adjustable resistor R0 and grounding, The gate end of the second MOS tube M2, the gate end of the third MOS tube M3, the second end of the second MOS tube M2, the first end of the initial MOS tube M0, the gate end of the sixth MOS tube M6, the gate end of the seventh MOS tube M7, the gate end of the eighth MOS tube M8, and the gate end of the ninth MOS tube M9 are connected, and the power supply is connected to one end of the first MOS capacitor C1, the second end of the third MOS tube M3, the first end of the second MOS tube M2, the first end of the sixth MOS tube M6, the first end of the seventh MOS tube M7, the first end of the eighth MOS tube M8, and the first end of the ninth MOS tube M9.

[0114] It should be noted that the second current source IBP and the first current source IBN are used for current biasing.

[0115] It should be noted that the heat dissipation process of the present invention includes two alternating stages of electron beam bombardment and heat dissipation. In the electron beam bombardment stage, the electron beam passes through the micron-level first channel on the fixed copper block and accurately hits a micro-nanostructure anode target welded by a tungsten needle on the rotatable rotor to generate micro-focused X-rays. The bombardment duration is T / 2. In the heat dissipation stage, the electron beam is turned off, and the rotatable rotor rotates for T / 2 time to move the next micro-nanostructure anode target to the bombardment position. When the next target position is in place, the electron beam is turned on again, and the cycle repeats. The micro-nanostructure anode target is driven by the rotatable rotor to perform periodic motion, which significantly improves the heat dissipation capacity of the target material; the use of a transmission-type microstructure target material ensures the micro-focusing of the generated X-ray source; and the organic unity of the micro-focusing and high-dose output of the X-ray source is achieved.

[0116] The present invention generates precise timing control signals through a dedicated integrated circuit, wherein the periods of the electron beam switch signal and the rotor rotation control signal are both T, and the period of one revolution of the rotor is Tn (n is the number of target materials welded on the rotor). The method for determining the control period T is: first, the maximum allowable operating temperature T of the micro-nanostructure anode target is set. temp Then, the longest bombardment time required for the target to reach this temperature under a given electron beam power is determined by theoretical calculation, which is T / 2. In a complete heat dissipation cycle, after a single target is bombarded by an electron beam for t1=T / 2 time, the temperature rises to the set value T temp, and then dissipate heat during the time t2 = (n-1)T + T / 2. The target dissipates heat by radiating the environment.

[0117] In a specific embodiment, the rotating rotor 15 is made of molybdenum because molybdenum has good thermal conductivity (138W / (m·K)), high melting point (2896K) and moderate thermal expansion coefficient (4.8×10 -6 / K). The micro-nano structure anode target 16 also uses molybdenum material, mainly considering its moderate X-ray yield and good thermal stability. In other embodiments, according to different application requirements, materials such as tungsten (suitable for high-energy X-ray generation), copper (suitable for low-energy X-ray generation), and gold (suitable for characteristic X-ray analysis) can be selected. The micro-nano structure anode target adopts a cylindrical structure with a bottom diameter of 1 micron and a height of 2.6 microns. This set of parameters is obtained through theoretical calculations, and has good intrinsic heat dissipation performance while ensuring micro-focusing characteristics. For other application scenarios, different structural shapes (such as prisms, cones, etc.) and size ranges (1 nanometer to 100 microns) can be selected.

[0118] In the static working state, when the microstructure target is continuously bombarded by a 40keV electron beam, the maximum current density it can carry is 14.14mA / cm2 under the conditions of a surface emissivity of 0.5 and a target temperature below 2000K. 2 .

[0119] In order to improve the electron beam carrying density of the system, this embodiment adopts a rotating design of 8 micro-nanostructure anode targets. Through precise control, the electron beam bombardment time of each target is 0.1ms, followed by a 1.5ms heat dissipation cycle (including 0.1ms bombardment time and 7×0.2ms rotation time). During the period when the target is not bombarded by the electron beam, thermal conduction and heat dissipation are achieved through thermal contact with the large-area fixed copper block 12, which significantly improves the heat dissipation efficiency. This innovative periodic active heat dissipation design increases the electron beam current density that the system can carry to 282.28mA / cm 2 , which is about 20 times higher than the static working state, while ensuring that the target temperature always remains within a safe range.

[0120] Example 2

[0121] Based on the X-ray generating device described in Example 1, this embodiment uses the same X-ray generating device as that in Example 1. Fig.14 As shown, a miniaturized X-ray generating device, based on the X-ray generating device described in Example 1, further includes: a housing 50, a switch 30, a battery 40, and a beryllium window 60;

[0122] The beryllium window 60 is embedded in the housing 50 and is located on the axis of the first channel. The interior of the housing 50 is vacuum, and the switch 30 , the battery 40 and the control unit 20 are connected.

[0123] Fig.14 Reference numeral 20 denotes a control unit.

[0124] It should be noted that the battery 40 is composed of multiple lithium batteries connected in series and parallel, and is used to power the device; the housing 50 is made of lead or other protective materials for radiation protection; and the beryllium window 60 is used for transmission output of X-rays.

[0125] It should be noted that by reasonably controlling the power consumption of the entire X-ray generating device, including reducing the power consumption of the control circuit and the output power of the electron beam emission, the system can be powered by a high-energy-density lithium battery, thereby realizing the miniaturization of the power supply system. A miniaturized X-ray generating device with a compact structure, good heat dissipation effect, and safe and reliable operation is particularly suitable for application scenarios that require miniaturization and high resolution, such as portable X-ray fluorescence analyzers.

[0126] When VCC is powered on, the chip starts working. First, the bias circuit module 21 enables the power reset circuit, enables the bandgap reference source unit, and provides reference voltage signals of 1.2V (VREF1P2V), 1V (VREF1V) and 2.4V (VREF2P4V). The BGOK signal generated by the reference source 22 is used as the start signal of other modules to ensure that each functional module is started in the set order. The power module 23 (LDO) generates a 1.8V voltage (VOUT_VDD) to power the clock oscillator 241; the oscillator then generates a square wave signal (EN_OSC) with a period of 0.2ms. After the oscillator signal is processed by the signal control module 242, two non-overlapping control signals (EN_ELEBEAM, EN_TAR) are generated. These signals control the switch of the electron beam and the rotation of the anode target through relays, thereby realizing precise control of the micro X-ray tube. At the same time, the temperature monitoring module 25 converts the temperature into a voltage signal (VT), which is used to monitor the target temperature. When the temperature signal VT exceeds the preset threshold, the output of the over-temperature protection hysteresis comparator 251 will be triggered, immediately shutting off the electron beam and stopping the target rotation; after the temperature returns to normal, the control signal will be restarted.

[0127] When testing the control unit, the system control signal period is 205μs, which is consistent with the design target (about 0.2ms). The static power consumption of the chip is about 14.75μA, and the average power consumption is 15.81μA, which enables the chip to work continuously for more than 60,000 hours when powered by a 3.3V, 1000mAh lithium battery, meeting the requirements of long-term, low-power operation.

[0128] For the power consumption of the cathode emission electron beam system, if the electron beam spot diameter is 0.2 mm and the electron beam current is 100 μA, the current density is 318 mA / cm 2 , which is higher than the limiting current density of 282.28 mA / cm that the micro-nanostructure anode target can carry in the embodiment. 2 The power consumption of the electron beam acceleration part is 40kV×100μA (the power consumption of the electron beam field emission can be ignored), that is, 4W. Two 14.8V, 625mAh lithium batteries are used, and the total power is 18.5Wh. Considering the energy conversion efficiency of 80%, the actual power consumption is 4W / 0.8=5W, and the theoretical battery life is about 3.7 hours.

[0129] Therefore, a miniaturized X-ray generating device can be completely powered by lithium batteries. This portable design not only ensures the normal operation of the system, but also meets the actual application needs.

[0130] The same or similar reference numerals correspond to the same or similar components;

[0131] The terms used in the drawings to describe positional relationships are only used for illustrative purposes and should not be construed as limiting this patent;

[0132] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. An X-ray generating device, comprising: A fixed copper block (12), a rotating rotor (15), a rotating component, a plurality of micro-nanostructure anode targets (16), an electron gun (11), and a control unit; The rotating rotor (15) and the fixed copper block (12) are coaxially arranged; a plurality of micro-nano structure anode targets (16) are axially arranged on the rotating rotor (15), and the plurality of micro-nano structure anode targets (16) are equidistant from the axis of the rotating rotor (15), which are all first distances; The fixed copper block (12) is provided with a first channel along the axial direction, the distance between the first channel and the axis of the fixed copper block (12) is a second distance, and the first distance and the second distance are equal; each of the micro-nanostructure anode targets (16) is in contact with an end surface of the fixed copper block (12); The emission end of the electron gun (11) is located on the same horizontal line as the first channel; The rotating component is connected to the axis of the rotating rotor (15) to drive the rotating rotor (15) to rotate along the axis; The control unit is connected to the rotating component and the electron gun (11) respectively, and is used to control the rotation of the rotating component and the switching of the electron gun (11).

2. An X-ray generating device according to claim 1, characterized in that: The rotating parts include: a motor (13) and a coupling (14); One end of the coupling (14) is connected to the rotating shaft of the motor (13), and the other end of the coupling (14) is connected to the axis of the rotating rotor (15); the control unit is connected to the control end of the motor (13).

3. The X-ray generating device according to claim 1, characterized in that: The material of the rotating rotor (15) is any one of molybdenum, tungsten, niobium, tantalum, rhenium or their alloys, and the material of the micro-nanostructure anode target (16) is any one of molybdenum, tungsten, copper, gold, silver, rhodium and chromium.

4. The X-ray generating device according to claim 1, characterized in that: The micro-nano structure anode target (16) is connected to the rotating rotor (15) via a tungsten needle (17).

5. An X-ray generating device according to claim 4, characterized in that: The control unit includes: a bias circuit unit, a bandgap reference source unit, a power supply module, a clock unit, a temperature monitoring module, and a temperature sensor; The temperature sensor is installed on the fixed copper block, and the output end of the temperature sensor is connected to the input end of the temperature monitoring module; the output end of the temperature monitoring module is connected to the input end of the clock unit, and the output end of the clock unit is connected to the input end of the electron gun and the input end of the rotating component.

6. An X-ray generating device according to claim 5, characterized in that: The temperature monitoring module includes: a thirty-second MOS tube M32, a thirty-third MOS tube M33, a thirty-fourth MOS tube M34, a thirty-fifth MOS tube M35, a thirty-sixth MOS tube M36, a thirty-seventh MOS tube M37, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a third Schmitt trigger I21, a fourth inverter I22, an operational amplifier I23, a first current source IBN, a second current source IBP, an eighth MOS capacitor C8, and a ninth MOS capacitor C9; The other end of the eleventh resistor R11 is connected to one end of the twelfth resistor R12, the second end of the thirty-second MOS tube M32, and the first end of the thirty-third MOS tube M33. The other end of the twelfth resistor R12 is connected to one end of the thirteenth resistor R13, the second end of the thirty-fourth MOS tube M34, and the first end of the thirty-fifth MOS tube M35. The inverting input end of the operational amplifier I23 is connected to the first end of the thirty-second MOS tube M32, the second end of the thirty-third MOS tube M33, the first end of the thirty-fourth MOS tube M34, and the second end of the thirty-fifth MOS tube M35. The other end of the fourteenth resistor R14 is connected to one end of the eighth MOS capacitor C8 and the non-inverting input end of the operational amplifier I23. The output end of the operational amplifier I23 is connected to the gate end of the thirty-sixth MOS tube M36. , the gate end of the thirty-seventh MOS tube M37 is connected, the other end of the second current source IBP is connected to the first end of the thirty-sixth MOS tube M36, the second end of the thirty-seventh MOS tube M37 is connected to one end of the first current source IBN, the second end of the thirty-sixth MOS tube M36 is connected to the first end of the thirty-seventh MOS tube M37 and one end of the third Schmitt trigger I21, the other end of the third Schmitt trigger I21 is connected to one end of the ninth MOS capacitor C9, the gate end of the thirty-third MOS tube M33, the gate end of the thirty-fourth MOS tube M34, and one end of the fourth inverter I22, the other end of the thirteenth resistor R13, the other end of the first current source IBN, the other end of the eighth MOS capacitor C8, and the other end of the ninth MOS capacitor C9 are grounded; The temperature sensor is connected to one end of the eleventh resistor R11, the other end of the fourth inverter I22 is connected to the gate end of the thirty-second MOS tube M32, the gate end of the thirty-fifth MOS tube M35, and the input end of the clock unit, and the output end of the bandgap reference source unit is connected to one end of the fourteenth resistor R14.

7. An X-ray generating device according to claim 6, characterized in that: The clock unit includes: a ring oscillator and a signal control module; The signal control module includes: a D flip-flop I7, a fourth inverter I8, a fifth inverter I9, a sixth inverter I10, a seventh inverter I11, an eighth inverter I12, an NOR gate I13, a two-input NAND gate I14, a first buffer I15, a second buffer I16, a first three-input NAND gate I17, a second three-input NAND gate I18, a ninth inverter I19, and a tenth inverter I20; The other end of the fourth inverter I8 is connected to the first input end of the NOR gate I13 and the second input end of the two-input NAND gate I14. The output end of the NOR gate I13 is connected to one end of the first buffer I15. The other end of the first buffer I15 is connected to one end of the fifth inverter I9. The other end of the fifth inverter I9 is ​​connected to the second input end of the D flip-flop I7, one end of the tenth inverter I20, and the first input end of the two-input NAND gate I14. The output end of the two-input NAND gate I14 is connected to one end of the second buffer I16. The other end of the second buffer I16 is connected to one end of the sixth inverter I10. The other end of the sixth inverter I10 is connected to the second input end of the NOR gate I13 and the third input end of the second three-input NAND gate I18, the other end of the tenth inverter I20 is connected to the third input end of the first three-input NAND gate I17, the second output end of the D flip-flop I7 is connected to the first input end of the first three-input NAND gate I17, the output end of the first three-input NAND gate I17 is connected to one end of the seventh inverter I11, the output end of the second three-input NAND gate I18 is connected to one end of the eighth inverter I12, and the other end of the ninth inverter I19 is connected to the first input end of the D flip-flop I7; The output end of the ring oscillator is connected to one end of the fourth inverter I8, one end of the ninth inverter I19 is connected to the first input end of the second three-input NOT gate I18 and the other end of the fourth inverter I22, the other end of the seventh inverter I11 is connected to the rotating component, the other end of the eighth inverter I12 is connected to the electron gun, and the output end of the bandgap reference source unit is connected to the third input end of the D flip-flop I7, the second input end of the first three-input NAND gate I17, and the second input end of the second three-input NOT gate I18; The ring oscillator includes: a first current source IBN, a twenty-sixth MOS tube M26, a twenty-seventh MOS tube M27, a twenty-eighth MOS tube M28, a twenty-ninth MOS tube M29, a thirtieth MOS tube M30, a thirty-first MOS tube M31, a second current source IBP, a level converter I3, a second Schmitt trigger I4, a second inverter I5, a third inverter I6, a second current source IBP, a fifth MOS capacitor C5, a sixth MOS capacitor C6, and a seventh MOS capacitor C7; The other end of the second current source IBP is connected to the first end of the twenty-sixth MOS tube M26, the first end of the twenty-seventh MOS tube M27, and the first end of the twenty-eighth MOS tube M28. The second end of the twenty-sixth MOS tube M26 is connected to the gate end of the twenty-seventh MOS tube M27, the first end of the twenty-ninth MOS tube M29, the gate end of the thirtieth MOS tube M30, and one end of the fifth MOS capacitor C5. The second end of the twenty-ninth MOS tube M29, the second end of the thirtieth MOS tube M30, and the second end of the thirty-first MOS tube M31 are connected to one end of the first current source IBN. The second end of the twenty-seventh MOS tube M27 is connected to the gate end of the twenty-eighth MOS tube M28, the first end of the thirtieth MOS tube M30, and the gate end of the thirty-first MOS tube M31. The gate end of the S transistor M31 is connected to one end of the sixth MOS capacitor C6, the second end of the twenty-eighth MOS transistor M28 is connected to the first end of the thirty-first MOS transistor M31, one end of the seventh MOS capacitor C7, and one end of the second Schmitt trigger I4, the other end of the first current source IBN, the other end of the fifth MOS capacitor C5, the other end of the sixth MOS capacitor C6, and the other end of the seventh MOS capacitor C7 are grounded, the other end of the second Schmitt trigger I4 is connected to one end of the second inverter I5, the other end of the second inverter I5 is connected to the gate end of the twenty-sixth MOS transistor M26, the gate end of the twenty-ninth MOS transistor M29, and one end of the third inverter I6, and the other end of the third inverter I6 is connected to the second input end of the level converter I3; The output end of the power module is connected to one end of the second current source IBP and the first input end of the level converter I3, the power supply is connected to the third input end of the level converter I3, and the output end of the level converter I3 is connected to one end of the fourth inverter I8.

8. An X-ray generating device according to claim 7, characterized in that: The power module includes: a nineteenth MOS tube M19, a twentieth MOS tube M20, a twenty-first MOS tube M21, a twenty-second MOS tube M22, a twenty-third MOS tube M23, a twenty-fourth MOS tube M24, a twenty-fifth MOS tube M25, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a first current source IBN, a third MOS capacitor C3, and a fourth MOS capacitor C4; The power supply is connected to the second end of the twenty-third MOS tube M23, the first end of the twenty-fourth MOS tube M24, and the first end of the twenty-fifth MOS tube M25. The gate end of the twenty-third MOS tube M23 is connected to the gate end of the twenty-fourth MOS tube M24. The second end of the twenty-second MOS tube M22 is connected to one end of the third MOS capacitor C3, the gate end of the twenty-fifth MOS tube M25, and the second end of the twenty-fourth MOS tube M24. The other end of the third MOS capacitor C3 is connected to one end of the tenth resistor R10. The other end of the fourth MOS capacitor C4 is grounded. The eighth resistor R8 is connected to the gate end of the twenty-second MOS tube M22. The other end is connected to one end of the ninth resistor R9 and the gate end of the nineteenth MOS tube M19, the first end of the twenty-first MOS tube M21 is connected to the first end of the twenty-third MOS tube M23, the first end of the nineteenth MOS tube M19 is connected to the second end of the twenty-first MOS tube M21, the second end of the twentieth MOS tube M20 is connected to the first end of the twenty-second MOS tube M22, the first end of the nineteenth MOS tube M19 is connected to the second end of the twentieth MOS tube M20 and one end of the first current source IBN, and the other end of the first current source IBN and the other end of the ninth resistor R9 are grounded; The other end of the tenth resistor R10 is connected to the second end of the twenty-fifth MOS tube M25, one end of the eighth resistor R8, one end of the fourth MOS capacitor C4, one end of the second current source IBP, and the first input end of the level converter I3; the output end of the bandgap reference source unit is connected to the gate end of the twenty-first MOS tube M21 and the gate end of the twenty-second MOS tube M22; and the gate end of the twentieth MOS tube M20 is connected to the output end of the bandgap reference source unit.

9. An X-ray generating device according to claim 8, characterized in that: The bandgap reference source unit comprises: a bandgap reference source module, a voltage buffer, and a delay device; The bandgap reference source module includes: a seventeenth MOS tube M17, an eighteenth MOS tube M18, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first PNP transistor Q1, a second PNP transistor Q2, and a low power amplifier I8; The power supply is connected to the first end of the eighteenth MOS tube M18, the second end of the eighteenth MOS tube M18 is connected to the first end of the seventeenth MOS tube M17, the gate end of the seventeenth MOS tube M17 is connected to the output end of the low power amplifier I8, the other end of the fourth resistor R4 is connected to one end of the second resistor R2 and one end of the third resistor R3, the non-inverting input end of the low power amplifier I8 is connected to the other end of the third resistor R3 and the emitter of the first PNP transistor Q1, the inverting input end of the low power amplifier I8 is connected to the other end of the second resistor R2 and one end of the first resistor R1, the other end of the first resistor R1 is connected to the emitter of the second PNP transistor Q2, the base of the first PNP transistor Q1, the collector of the first PNP transistor Q1, the base of the second PNP transistor Q2, the collector of the second PNP transistor Q2, and the other end of the seventh resistor R7 are grounded; The other end of the sixth resistor R6 is connected to one end of the seventh resistor R7 and one end of the fourteenth resistor R14, the other end of the fifth resistor R5 is connected to one end of the sixth resistor R6 and the gate end of the twentieth MOS tube M20, the input end of the voltage buffer and the input end of the delayer are connected to the second end of the seventeenth MOS tube M17, one end of the fourth resistor R4, and one end of the fifth resistor R5, the output end of the voltage buffer is connected to the gate end of the twenty-first MOS tube M21, the output end of the bias circuit unit is connected to the gate end of the eighteenth MOS tube M18, and the output end of the delayer is connected to the third input end of the D trigger I7.

10. An X-ray generating device according to claim 9, characterized in that: The bias circuit unit includes: a tenth MOS tube M10, an eleventh MOS tube M11, a twelfth MOS tube M12, a thirteenth MOS tube M13, a fourteenth MOS tube M14, a fifteenth MOS tube M15, a sixteenth MOS tube M16, a second MOS capacitor C2, a first Schmitt trigger I1, and a first inverter I2; The power supply is connected to the second end of the tenth MOS tube M10 and the first end of the eleventh MOS tube M11. The gate end of the tenth MOS tube M10 is connected to the gate end of the eleventh MOS tube M11, the first end of the tenth MOS tube M10, and the second end of the twelfth MOS tube M12. The gate end of the twelfth MOS tube M12 is connected to the first end of the twelfth MOS tube M12 and the second end of the thirteenth MOS tube M13. The gate end of the thirteenth MOS tube M13 is connected to the gate end of the fourteenth MOS tube M14 and the gate end of the sixteenth MOS tube M16. The gate end of the eleventh MOS tube M11 is connected to the gate end of the The second end is connected to the first end of the fourteenth MOS tube M14, one end of the second MOS capacitor C2, the second end of the fifteenth MOS tube M15, and one end of the first Schmitt trigger I1; the first end of the fifteenth MOS tube M15 is connected to the first end of the sixteenth MOS tube M16; the gate end of the fifteenth MOS tube M15 is connected to the other end of the first Schmitt trigger I1 and one end of the first inverter I2; the first end of the thirteenth MOS tube M13, the second end of the fourteenth MOS tube M14, the other end of the second MOS capacitor C2, and the second end of the sixteenth MOS tube M16 are grounded; The other end of the first inverter I2 is connected to the gate end of the eighteenth MOS transistor M18.

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