Wafer detection equipment and wafer detection method

Abstract

The invention discloses wafer detection equipment and a wafer detection method. The wafer detection equipment comprises a shell; the adsorption assembly is arranged in the shell and comprises an electrostatic chuck and a lifting mechanism which are connected with each other, and the electrostatic chuck is used for adsorbing a wafer; the contact switch assembly comprises a first contact piece and a second contact piece which are installed on different cavity walls of the shell respectively and can be connected in an on-off mode, and the second contact piece is opposite to the lifting mechanism in position; the control assembly comprises a suction cup controller and a power supply part, and the suction cup controller is conductively connected with the first contact part; wherein when the wafer detection equipment is in an adsorption state, the second contact piece is communicated with the first contact piece and the lifting mechanism, and the suction cup controller controls the electrostatic suction cup to adsorb the wafer; in the detection state, the first contact piece and the second contact piece are disconnected, and the power supply piece loads the electron beam to the wafer. According to the wafer detection equipment and the wafer detection method, the polarization phenomenon of the electrostatic chuck can be avoided, the controller of the electrostatic chuck is prevented from being damaged, and the overall detection efficiency is ensured.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular, relates to a wafer detection device and a wafer detection method. Background Art

[0002] During the manufacturing process of semiconductor wafers, high-voltage electron beam testing equipment is required to test the wafer's high-voltage resistance and other requirements. The wafer is usually adsorbed and transported by an electrostatic chuck to the high-voltage electron beam testing position.

[0003] When using a high-voltage electron beam for testing, tens of thousands of volts of high voltage will be loaded on the surface of the wafer to control the landing energy of the electron beam emitted by the electron gun. If the electrostatic chuck is still in a conductive state of adsorbing the wafer, it will cause polarization of the electrostatic chuck, and the high voltage will cause damage to the controller of the electrostatic chuck, thereby affecting the overall detection efficiency. Summary of the invention

[0004] The present application provides a wafer inspection device and a wafer inspection method, which can avoid the polarization phenomenon of the electrostatic chuck and prevent the controller of the electrostatic chuck from being damaged, thereby ensuring the overall inspection efficiency.

[0005] The present application provides a wafer detection device, which includes a shell; an adsorption component, which is arranged in the shell and includes an electrostatic chuck and a lifting mechanism connected to each other, the electrostatic chuck is used to adsorb the wafer, and the lifting mechanism is conductively connected to the electrostatic chuck and used to drive the electrostatic chuck to rise and fall; a contact switch component, which includes a first contact piece and a second contact piece that can be connected on and off, the first contact piece and the second contact piece are respectively installed on different cavity walls in the shell, and the second contact piece is opposite to the lifting mechanism in its moving direction, so that the second contact piece can move to a position in contact with the lifting mechanism; a control component, which includes a chuck controller for controlling the electrostatic chuck and a power supply for loading an electron beam to the wafer, and the chuck controller is conductively connected to the first contact piece; wherein the wafer detection device has an adsorption state and a detection state, in the adsorption state, the second contact piece is in contact with the first contact piece and the lifting mechanism to connect the first contact piece and the lifting mechanism, and the chuck controller controls the electrostatic chuck to adsorb the wafer; in the detection state, the first contact piece and the second contact piece are disconnected, the second contact piece is disconnected from the lifting mechanism, and the power supply loads the electron beam to the wafer.

[0006] As above, the wafer inspection equipment, wherein the first contact piece includes an insulating plate and a fixed contact part, the fixed contact part is conductively connected to the suction cup controller, the second contact piece is movably arranged in the up and down directions, the second contact piece has a conductively connected moving rod and a first moving contact part, the moving rod can drive the first moving contact part to move within the coverage range of the insulating plate, and contact or separate from the fixed contact part.

[0007] As above, the wafer inspection equipment, wherein the lifting mechanism has a transmission base and a transmission part connected to each other, the electrostatic suction cup is installed on the transmission base, and the transmission part protrudes from the edge of the electrostatic suction cup and is arranged above the second contact piece; wherein, in the adsorption state, the second contact piece is in a connecting position connected to the first contact piece, and the second contact piece is in contact with the transmission part; in the inspection state, the second contact piece is in a first disconnecting position disconnected from the first contact piece, and the second contact piece is separated from the transmission part.

[0008] As the wafer detection equipment above, the lifting mechanism is movably arranged in the up and down directions, and the wafer detection equipment also has a material picking state. In the material picking state, the second contact piece is in a second disconnected position disconnected from the first contact piece, the second contact piece is abutted against the transmission part, and the electrostatic suction cup is located at the material picking position; wherein, in the up and down directions, the first disconnected position is a low position, the connected position is a middle position higher than the first disconnected position, and the second disconnected position is a high position higher than the connected position.

[0009] As the wafer inspection device above, during the switching process between the adsorption state and the material picking state, the second contact member always maintains an abutment state with the transmission part to drive the adsorption component to move in the up and down direction.

[0010] As above, the wafer inspection equipment, wherein the fixed contact part is made of metal material, the surface of the fixed contact part facing the second contact piece has a contact groove, the first movable contact part is fixed to the outer peripheral surface of the movable rod, the surface of the first movable contact part facing the fixed contact part has a contact protrusion, the contact protrusion is adapted to the shape of the contact groove, and the contact protrusion is telescopically arranged on the surface of the first movable contact part.

[0011] In the wafer inspection device as above, the second contact member also includes a flexible driving part connected to the moving rod, and the flexible driving part can undergo flexible deformation in the up and down directions. The control component also includes a driving member, which is conductively connected to the flexible driving part through a conductive connecting member to drive the flexible driving part to undergo flexible deformation.

[0012] As for the wafer inspection equipment as above, the shell is used to define a vacuum environment, and the control component is installed outside the shell. The wafer inspection equipment also includes: a conductive connector that passes through the cavity wall of the shell, and the control component is conductively connected to the contact switch component through the conductive connector.

[0013] The wafer detection equipment as above, wherein the wafer detection equipment also includes a detection circuit structure, the detection circuit structure is arranged outside the shell and is conductively connected to the control component, and the detection circuit structure is respectively connected to the first contact piece and the second contact piece through a conductive connecting piece, for detecting the induced voltage between the first contact piece and the second contact piece and controlling the control component according to the induced voltage.

[0014] The wafer inspection equipment as above, wherein the inside of the shell also has an electron gun arranged toward the electrostatic chuck, the electron gun is used to apply an electron beam to the surface of the wafer adsorbed by the electrostatic chuck, and the power supply of the control component is conductively connected to the electron gun through a conductive connector to supply power to the electron gun.

[0015] The wafer inspection equipment of the present application includes a shell, an adsorption component, a contact switch component and a control component, wherein the adsorption component is arranged inside the shell, and the first contact piece and the second contact piece of the contact switch component are installed on different cavity walls inside the shell, which rationally utilizes the space inside the shell and can control the adsorption of the adsorption component inside the shell, avoiding external interference.

[0016] The wafer detection equipment has an adsorption state and a detection state. In the adsorption state, the second contact piece is in contact with and connected to the first contact piece and the lifting mechanism. Since the suction cup controller is conductively connected to the first contact piece, the electrostatic suction cup is conductively connected to the lifting mechanism, a conductive path is formed between the suction cup controller and the electrostatic suction cup, and the suction cup controller can control the electrostatic suction cup to electrostatically adsorb the wafer; in the detection state, the power supply can directly load a high-energy electron beam onto the surface of the wafer to detect surface defects of the wafer. Since the first contact piece and the second contact piece are disconnected in this state, the conductive connection between the suction cup controller and the electrostatic suction cup is in a disconnected state, and the electrostatic suction cup is not in an electrostatic adsorption state, thereby avoiding the high-energy electron beam loaded by the power supply causing polarization of the electrostatic suction cup, and also avoiding damage to the suction cup controller by the high-energy electron beam, thereby ensuring the overall detection efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solution of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0018] Figure 1 A schematic diagram of the coordination of the adsorption component and the contact switch component of the wafer inspection equipment according to an embodiment of the present application;

[0019] Figure 2 An exploded view of a contact switch assembly of a wafer inspection device according to an embodiment of the present application;

[0020] Figure 3 This is an overall schematic diagram of a wafer inspection device according to an embodiment of the present application.

[0021] Description of Figure Numbers:

[0022] 10. adsorption assembly; 11. electrostatic chuck; 12. lifting mechanism; 121. transmission base; 122. transmission part;

[0023] 20. contact switch assembly; 21. first contact member; 211. insulating plate; 212. fixed contact portion; 213. contact groove; 22. second contact member; 221. moving rod; 222. first moving contact portion; 223. contact convex portion; 224. second moving contact portion;

[0024] 30. Control component; 31. Suction cup controller; 32. Power supply; 33. Driving component;

[0025] 40. Shell;

[0026] 50. Conductive connector;

[0027] 60. Detection circuit structure. DETAILED DESCRIPTION

[0028] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.

[0029] In the semiconductor manufacturing process, high-energy electron beam inspection is often used to detect microscopic defects on wafers, such as pattern defects, impurities, fractures and other problems that may affect chip performance. Therefore, high-energy electron beam inspection equipment is a key device for detecting chip performance and defects in the semiconductor manufacturing process.

[0030] During the inspection process of wafers by high-energy electron beam inspection equipment, the inspection equipment will load tens of thousands of volts of high voltage onto the wafer surface to control the landing energy of the electron beam emitted by the electron gun. The high-energy electron beam scans the sample surface and generates a detection signal. The detection signal is collected by the corresponding detector and converted into an image, thereby revealing the microstructure and properties of the sample surface. Therefore, the inspection process will generate high voltage, which places extremely high demands on the high voltage resistance of each component.

[0031] During the inspection process, if the electrostatic chuck carrying the wafer is not protected, the high-voltage electric field generated by the high-energy electron beam inspection equipment will polarize the electrostatic chuck and prevent it from working properly. A control switch such as a contactor is required to promptly cut off the connection between the electrostatic chuck and its controller to prevent the electrostatic chuck from still being electrostatically adsorbed in a high-voltage environment, causing the electrostatic chuck to polarize. In addition, when the electrostatic chuck is connected to its controller, the high voltage of the high-energy electron beam inspection equipment will also damage the controller of the electrostatic chuck.

[0032] At present, when using traditional switching devices such as relays or contactors to isolate and protect the electrostatic chuck and the electrostatic chuck controller, the high voltage of the high-energy electron beam detection equipment may cause the induced voltage and current in the switching device to cause armature control failure, which ultimately leads to polarization of the electrostatic chuck and damage to the electrostatic chuck controller. In order to solve the above problems, the embodiment of the present application provides a wafer detection device that can avoid the polarization phenomenon of the electrostatic chuck and avoid damage to the controller of the electrostatic chuck, thereby ensuring the overall detection efficiency.

[0033] like Figures 1 to 3 As shown, an embodiment of the present application provides a wafer detection device, wherein the wafer detection device includes an adsorption component 10, a contact switch component 20, a control component 30 and a housing 40. The adsorption component 10 includes an electrostatic chuck 11 and a lifting mechanism 12 connected to each other, the electrostatic chuck 11 is used to adsorb the wafer, and the lifting mechanism 12 is conductively connected to the electrostatic chuck 11 and is used to drive the electrostatic chuck 11 to rise and fall. The contact switch component 20 includes a first contact member 21 and a second contact member 22 that can be connected on and off, the first contact member 21 and the second contact member 22 are installed on different cavity walls in the housing 40, and the second contact member 22 is opposite to the lifting mechanism 12 so that the second contact member 22 can move to a position in contact with the lifting mechanism 12. The control component 30 includes a chuck controller 31 for controlling the electrostatic chuck 11 and a power supply 32 for loading an electron beam onto the wafer, and the chuck controller 31 is conductively connected to the first contact member 21. The wafer detection device has an adsorption state and a detection state. In the adsorption state, the second contact member 22 is in contact with the first contact member 21 and the lifting mechanism 12 to connect the first contact member 21 and the lifting mechanism 12, and the suction cup controller 31 controls the electrostatic suction cup 11 to adsorb the wafer. In the detection state, the first contact member 21 and the second contact member 22 are disconnected, the second contact member 22 is disconnected from the lifting mechanism 12, and the power supply member 32 loads the electron beam to the wafer.

[0034] The wafer inspection equipment of the embodiment of the present application includes an adsorption component 10, a contact switch component 20, a control component 30 and a shell 40, wherein the adsorption component 10 is arranged inside the shell 40, and the first contact piece 21 and the second contact piece 22 of the contact switch component 20 are installed on different cavity walls inside the shell 40, so that the structure and space inside the shell 40 are reasonably utilized, and there is no need to reserve additional space outside the shell 40 for the installation of the contactor, and the contact switch component 20 can control the adsorption of the adsorption component 10 inside the shell 40, avoiding external interference.

[0035] The wafer detection equipment has an adsorption state and a detection state. In the adsorption state, the second contact piece 22 is connected to the first contact piece 21 and the lifting mechanism 12. Since the suction cup controller 31 is conductively connected to the first contact piece 21, and the electrostatic suction cup 11 is conductively connected to the lifting mechanism 12, a conductive path is formed between the suction cup controller 31 and the electrostatic suction cup 11. The suction cup controller 31 can control the electrostatic suction cup 11 to adsorb the wafer to fix the wafer on the electrostatic suction cup 11, so as to facilitate the detection of whether the wafer meets the high-energy electron beam detection requirements.

[0036] In the detection state, the power supply 32 can directly load a high-energy electron beam onto the surface of the wafer to detect surface defects of the wafer. Since the first contact 21 and the second contact 22 are disconnected in this state, the conductive connection between the suction cup controller 31 and the electrostatic suction cup 11 is disconnected, and the electrostatic suction cup 11 is not in an electrostatic adsorption state, and only adsorbs the wafer by the residual adsorption force, thereby avoiding the high-energy electron beam loaded by the power supply 32 causing the electrostatic suction cup 11 to produce polarization phenomenon, and also avoiding the suction cup controller 31 from being damaged by the high-energy electron beam, thereby ensuring the overall detection efficiency. Figure 3 As shown, the wafer inspection equipment of the embodiment of the present application, wherein the interior of the shell 40 is a vacuum environment, the adsorption component 10 and the contact switch component 20 are both installed inside the shell 40, and the control component 30 is installed outside the shell 40; the conductive connector 50 is penetrated through the cavity wall of the shell 40, and the control component 30 is conductively connected to the adsorption component 10 and the contact switch component 20 through the conductive connector 50.

[0037] During specific implementation, the adsorption component 10 and the contact switch component 20 are installed in a vacuum environment inside the shell 40, and the conductive connector 50 is passed through the cavity wall of the shell 40. One end of the conductive connector located inside the shell 40 can be conductively connected to the adsorption component 10 and the contact switch component 20, and one end of the conductive connector located outside the shell 40 can be conductively connected to the control component 30, so that the control component 30 can control the adsorption component 10 and the contact switch component 20 in the shell 40 through the conductive connector 50, thereby satisfying the requirements that the adsorption component 10 can adsorb the wafer in a vacuum environment and perform high-energy electron beam detection on the wafer in a vacuum environment.

[0038] Specifically, the conductive connector 50 is a vacuum electrode, and the two sides of the vacuum electrode facing the inside and outside of the shell 40 have multiple corresponding connection ends. The chuck controller 31 is connected to the electrostatic chuck 11 through one of the connection ends, and the power supply 32 is connected to the electron gun inside the shell 40 through the other connection end, so that the electron gun applies a high-energy electron beam to the surface of the wafer to detect the wafer. Therefore, the multiple connection ends of the conductive connector 50 can enable the control component 30 to control multiple parts inside the shell 40 separately to achieve a variety of different functions.

[0039] like Figure 2 As shown, a wafer inspection device according to an embodiment of the present application, wherein the first contact piece 21 is fixed in a shell body 40, the first contact piece 21 includes an insulating plate 211 and a fixed contact portion 212, the second contact piece 22 is movably installed in the shell body 40 along the up and down directions, the second contact piece 22 has a moving rod 221 and a first moving contact portion 222, the moving rod 221 can drive the first moving contact portion 222 to move within the coverage range of the insulating plate 211, and contact or separate from the fixed contact portion 212.

[0040] It should be noted that in the embodiments of the present application, Figure 1 As shown, the up and down direction is the height direction of the entire wafer inspection equipment.

[0041] During specific implementation, the first movable contact portion 222 can move up and down along with the movable rod 221, so that the first movable contact portion 222 and the fixed contact portion 212 are relatively or offset in the up and down directions, so as to achieve contact or separation between the two. When the two are in contact, the first contact piece 21 and the second contact piece 22 are conductively connected, thereby connecting the suction cup controller 31 and the electrostatic suction cup 11, so that the suction cup controller 31 controls the electrostatic suction cup 11 to adsorb and release the wafer; when the first movable contact portion 222 is separated from the fixed contact portion 212, the first contact piece 21 and the second contact piece 22 are disconnected, thereby disconnecting the conductive connection between the suction cup controller 31 and the electrostatic suction cup 11, so as to avoid polarization of the electrostatic suction cup 11 during wafer detection.

[0042] Moreover, in the up and down directions, the first movable contact portion 222 can only move within the coverage range of the insulating plate 211 and cannot move outside the coverage range of the insulating plate 211. Therefore, when the first movable contact portion 222 is separated from the fixed contact portion 212, it cannot contact the cavity wall of the shell 40 or other conductive components in the shell 40, so as to avoid affecting the wafer detection function or adsorption function of the wafer detection equipment.

[0043] like Figure 1 and Figure 2 As shown, the wafer detection equipment of the embodiment of the present application, wherein the lifting mechanism 12 has a transmission base 121 and a transmission part 122 connected to each other, the electrostatic suction cup 11 is installed on the transmission base 121, and the transmission part 122 protrudes from the electrostatic suction cup 11 and is arranged above the second contact piece 22; wherein, in the adsorption state, the first contact piece 21 is connected to the second contact piece 22, and the second contact piece 22 is in contact with the transmission part 122; in the detection state, the second contact piece 22 is in a first disconnection position disconnected from the first contact piece 21, and the second contact piece 22 is separated from the transmission part 122.

[0044] Furthermore, the lifting mechanism 12 is movably arranged in the up-down direction, and the wafer detection device also has a material-retrieving state. In the material-retrieving state, the second contact member 22 is in a second disconnected position disconnected from the first contact member 21, and the second contact member 22 is disposed against the transmission part 122, and the electrostatic chuck 11 is located in the material-retrieving position. Among them, in the up-down direction, the first disconnected position is a low position, the connected position is a middle position higher than the first disconnected position, and the second disconnected position is a high position higher than the connected position, that is, between the first disconnected position, the connected position and the second disconnected position, the first disconnected position is the lowest in the up-down direction, the second disconnected position is the highest in the up-down direction, and the connected position is disposed between the two. By setting the first disconnected position, the connected position and the second disconnected position as positions with different heights in the up and down directions, when the second contact piece 22 moves up and down between the connected position and the second disconnected position, the transmission part 122 can be pressed against the top of the second contact piece 22 under the action of its own gravity, and there is no need to adopt other force-applying structures to maintain the contact effect between the second contact piece 22 and the transmission part 122, thereby simplifying the overall structure of the equipment; when the second contact piece 22 moves up and down between the first disconnected position and the connected position, the height position of the second contact piece 22 is lower than the lowest point of the movement of the transmission part 122, so that the second contact piece 22 and the transmission part 122 are disconnected.

[0045] In the material picking state of the wafer detection equipment, the second contact piece 22 is in a second disconnected position disconnected from the first contact piece 21, and the second contact piece 22 is against the bottom of the transmission part 122 to support the transmission part 122. At this time, the electrostatic chuck 11 is in the material picking position and can be docked with an external wafer feeding device to pick up the wafer onto the electrostatic chuck 11. In the process of the wafer detection equipment being converted from the material picking state to the adsorption state, the second contact piece 22 moves downward in the up-down direction, and drives the transmission part 122 supported by the second contact piece 22 to move downward together, until the first contact piece 21 and the second contact piece 11 are connected. The second contact piece 22 is connected with the transmission part 122, at this time, the second contact piece 22 is still in contact with the transmission part 122, the suction cup controller 31 is connected with the electrostatic suction cup 11, and the suction cup controller 31 can control the electrostatic suction cup 11 to adsorb and release the wafer; in the process of the wafer detection equipment being converted from the adsorption state to the detection state, the second contact piece 22 continues to move downward in the up and down direction, and reaches the first disconnection position separated from the transmission part 122, thereby disconnecting the connection between the suction cup controller 31 and the electrostatic suction cup 11, and the power supply 32 can load the high-energy electron beam to the wafer surface through the conductive connecting piece 50 to detect the wafer.

[0046] Specifically, the transmission part 122 is positioned opposite to the moving rod 221 of the second contact piece 22 and is arranged above the moving rod 221 in the up and down directions. A second moving contact part 224 is provided at the upper end of the moving rod 221. When the transmission part 122 contacts the second moving contact part 224, the transmission part 122 can be conductively connected to the first moving contact part 222 through the second moving contact part 224, so that when the wafer detection equipment is in an adsorption state, a conductive path is formed from the suction cup controller 31 to the electrostatic suction cup 11, so that the suction cup controller 31 can freely control the adsorption and release of the electrostatic suction cup 11 on the wafer.

[0047] like Figure 1 and Figure 2 As shown, a wafer inspection device of an embodiment of the present application, wherein the fixed contact portion 212 is made of metal material, the surface of the fixed contact portion 212 facing the second contact piece 22 has a contact groove 213, the first movable contact portion 222 is fixed to the outer peripheral surface of the movable rod 221, the surface of the first movable contact portion 222 facing the fixed contact portion 212 has a contact protrusion 223, the contact protrusion 223 is adapted to the shape of the contact groove 213, and the contact protrusion 223 can be telescopically arranged on the surface of the first movable contact portion 222.

[0048] In specific implementation, when the contact protrusion 223 moves to contact the surface of the fixed contact part 212, the contact protrusion 223 is in a retracted state, and when the contact protrusion 223 continues to move to contact the contact groove 213, the contact protrusion 223 is in an extended state and is stuck in the contact groove 213, so the contact groove 213 will produce a certain resistance to the contact protrusion 223, preventing the second contact member 22 from moving in the up and down direction under the action of gravity, and the contact protrusion 223 from being out of the coverage of the fixed contact part 212, resulting in the disconnection between the second contact member 22 and the first contact member 21. Therefore, the coordinated arrangement of the contact protrusion 223 and the contact groove 213 can ensure the contact stability between the first contact member 21 and the second contact member 22, so that the suction cup controller 31 can stably control the electrostatic suction cup 11 to adsorb and release the wafer.

[0049] Specifically, the shell of the first movable contact part 222 is made of an insulating material, a portion of the contact protrusion 223 is protruded from the shell to contact the contact groove 213, and another portion of the contact protrusion 223 is arranged inside the insulating shell to contact and electrically connect with the moving rod 221. The insulating shell of the first movable contact part 222 can prevent the conductive connection parts such as the moving rod 221 from accidentally contacting the contact groove 213 to cause the conductive path to be connected.

[0050] The contact protrusion 223 is a spherical structure, which is connected to the first movable contact portion 222 through an elastic connecting piece. The elastic connecting piece enables the contact protrusion 223 to be extended and retracted in the direction of the contact groove 213. The contact groove 213 is an arc-shaped groove adapted to the spherical structure of the contact protrusion 223. The shape setting of the two makes the contact protrusion 223 have less resistance when sliding into or out of the contact groove 213 in the up and down directions, thereby avoiding the contact protrusion 223 from getting stuck after being stuck in the contact groove 213.

[0051] Optionally, the surface of the contact protrusion 223 facing the contact groove 213 may be two obliquely connected arc surfaces or planes, and the surface shape of the contact groove 213 is adapted to the surface shape of the contact protrusion 223, and can also meet the resistance requirement of the contact protrusion 223 sliding in or out of the contact groove 213.

[0052] The wafer inspection equipment of the embodiment of the present application, wherein the second contact member 22 also includes a flexible driving part connected to the moving rod 221, and the flexible driving part can undergo flexible deformation in the up and down directions. The control component 30 also includes a driving member 33, and the driving member 33 is conductively connected to the flexible driving part through a conductive connecting member 50 to drive the flexible driving part to undergo flexible deformation.

[0053] During specific implementation, the driving member 33 is conductively connected to the flexible driving part through an independent connecting end of the conductive connecting member 50 to freely control the flexible extension and contraction of the flexible driving part, so that the flexible driving part can undergo flexibly deformation in the up and down directions, thereby driving the moving rod 221 to move up and down in the up and down directions, thereby enabling the wafer detection equipment to switch between the material picking state, the adsorption state and the detection state.

[0054] Specifically, the flexible driving part is a flexible bellows connected to the bottom of the moving rod 221. The flexible bellows can lift the bottom of the moving rod 221 or drive the bottom of the moving rod 221 to fall by its own expansion and contraction in the up and down directions, thereby realizing the movement of the moving rod 221 in the up and down directions.

[0055] Optionally, the driving member 33 may also drive a sliding structure such as a slider to slide in the up-down direction to drive the moving rod 221 to move in the up-down direction, thereby making the movement of the moving rod 221 in the up-down direction more stable.

[0056] like Figure 3 As shown, the wafer detection equipment of an embodiment of the present application, wherein the wafer detection equipment also includes a detection circuit structure 60, the detection circuit structure 60 is arranged outside the shell 40 and is conductively connected to the control component 30, and the detection circuit structure 60 is respectively connected to the first contact member 21 and the second contact member 22 through the conductive connecting member 50, for detecting the induced voltage between the first contact member 21 and the second contact member 22 and controlling the control component 30 according to the induced voltage.

[0057] In a specific implementation, the detection circuit structure 60 of the wafer detection device is arranged outside the housing 40, and is connected to the first contact member 21 and the second contact member 22 through the conductive connector 50. When the first contact member 21 and the second contact member 22 are conductively connected, the detection circuit structure 60 can generate an induced voltage. When the first contact member 21 and the second contact member 22 are disconnected, there is no induced voltage between the detection circuit structure 60. Therefore, by detecting the induced voltage of the detection circuit structure 60, it is possible to determine whether the first contact member 21 and the second contact member 22 inside the housing 40 are conductively connected, so as to further control the control component 30 to control whether the power supply member 32 performs high-energy electron beam detection on the wafer, so as to avoid wafer detection when the first contact member 21 and the second contact member 22 are connected, which leads to the polarization of the electrostatic chuck 11.

[0058] The detection circuit structure 60 at least includes a resistor and a voltmeter connected in parallel. The voltmeter can directly read whether there is an induced voltage between the first contact 21 and the second contact 22, thereby determining the connection state of the first contact 21 and the second contact 22.

[0059] The specific process of the wafer inspection device in the embodiment of the present application inspecting the wafer is as follows:

[0060] First, the second contact member 22 is moved upward until it abuts against the lifting mechanism 12, so as to move the electrostatic chuck 11 to the wafer picking position, and the electrostatic chuck 11 performs the picking operation; wherein, when the second contact member 22 moves upward, the second movable contact portion 224 at the top of the movable rod 221 can always abut against the bottom of the transmission portion 122 of the lifting mechanism 12, and generate an upward thrust on the lifting mechanism 12 as a whole, so that the electrostatic chuck 11 is synchronously moved upward to the wafer picking position, at which time the wafer detection equipment is in the picking state, and the electrostatic chuck 11 can be docked with the external feeding equipment to realize the electrostatic chuck 11 to pick up the wafer;

[0061] Secondly, the second contact member 22 is moved downward until it is connected to the first contact member 21, and the electrostatic suction cup 11 is controlled to adsorb the wafer; wherein, during the downward movement of the second contact member 22, the second movable contact portion 224 also always maintains a state of abutting against the bottom of the transmission portion 122, that is, the second movable contact portion 224 is supported on the bottom of the transmission portion 122, so that the second contact member 22 and the lifting mechanism 12 move downward synchronously, thereby driving the electrostatic suction cup 11 to move downward, and when the second contact member 22 moves until its first movable contact portion 222 contacts the fixed contact portion 212 of the first contact member 21, the second contact member 22 is connected to the first contact member 21, and at this time, the second movable contact portion 224 is still in contact with the transmission portion 122, but there is no interaction force between the two, thereby realizing a conductive connection between the suction cup controller 31 and the electrostatic suction cup 11, and at this time, the wafer detection equipment is in an adsorption state, and the suction cup controller 31 can freely control the electrostatic suction cup 11 to adsorb the wafer;

[0062] Finally, the second contact member 22 is continuously moved downward until the second contact member 22 is separated from the first contact member 21 and the adsorption assembly 10, and the electron beam is loaded on the wafer; wherein, after the second contact member 22 is continuously moved downward, the second movable contact portion 224 of the second contact member 22 is separated from the bottom of the transmission portion 122, so that the second contact member 22 is disconnected from the lifting mechanism 12 of the adsorption assembly 10, and at the same time, the first movable contact portion 222 is separated from the fixed contact portion 212, so that the second contact member 22 is disconnected from the first contact member 21, and at this time, the adsorption assembly 10 is used to remove the electron beam. The conductive path from the disk controller 31 to the electrostatic suction cup 11 is completely disconnected, and the suction cup controller 31 cannot control the electrostatic suction cup 11 to adsorb. At this time, the wafer detection equipment is in the detection state, and the power supply 32 can be used to load a high-energy electron beam on the wafer surface to realize the detection of wafer surface defects. Since the suction cup controller 31 is disconnected from the electrostatic suction cup 11, the electrostatic suction cup 11 cannot be electrostatically adsorbed. Therefore, during the high-voltage detection process of the power supply 32, the electrostatic suction cup 11 will not produce polarization, and the high voltage will not act on the suction cup controller 31 to cause damage to it.

[0063] In the above detection process, it is necessary to use the driving member 33 of the control component 30 to drive the flexible driving part inside the shell 40, so that the flexible driving part undergoes flexible deformation, thereby driving the moving rod 221 of the second contact member 22 to move up and down in the up and down directions, thereby switching the wafer detection equipment between the material picking state, the adsorption state and the detection state.

[0064] After the wafer is inspected using a high-energy electron beam, the second contact piece 22 can be moved upward until the second contact piece 22 is connected to the first contact piece 21, the second contact piece 22 is in contact with and connected to the lifting mechanism 12, and the suction cup controller 31 freely controls the electrostatic suction cup 11 to release the wafer; after the electrostatic suction cup 11 completely releases the wafer, the second contact piece 22 continues to be moved upward to disconnect the second contact piece 22 from the first contact piece 21, the second contact piece 22 is abutted against the bottom of the lifting mechanism 12, and the lifting mechanism 12 is pushed upward, so that the electrostatic suction cup 11 is docked with an external feeding device, and the electrostatic suction cup 11 can feed wafers to the outside.

[0065] When the second contact piece 22 is separated from the first contact piece 21 and the adsorption assembly 10, while loading the electron beam on the wafer, it is also necessary to detect the induced voltage between the first contact piece 21 and the second contact piece 22; if there is an induced voltage, stop loading the electron beam on the wafer and drive the second contact piece 22 to continue moving downward; if there is no induced voltage, keep loading the electron beam on the wafer.

[0066] After the first contact piece 21 and the second contact piece 22 are separated, the two may still be conductively connected due to the small creepage distance. At this time, the detection circuit structure 60 can generate an induced voltage. At this time, the second contact piece 22 should be driven to continue to move downward to increase the creepage distance between the first contact piece 21 and the second contact piece 22 to avoid conductive connection between the two, thereby avoiding polarization of the electrostatic suction cup 11 during high-energy electron beam detection of the wafer, thereby achieving further protection of the wafer detection equipment.

[0067] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0068] The above is only a specific implementation of the present application. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present application is not limited to this. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the protection scope of this application.

Claims

1. A wafer inspection device, characterized in that: include: case; An adsorption assembly is disposed in the housing, comprising an electrostatic chuck and a lifting mechanism connected to each other, wherein the electrostatic chuck is used to adsorb the wafer, and the lifting mechanism is conductively connected to the electrostatic chuck and is used to drive the electrostatic chuck to rise and fall; The contact switch assembly comprises a first contact piece and a second contact piece capable of on-off connection, wherein the first contact piece and the second contact piece are respectively mounted on different cavity walls in the housing, and the second contact piece is opposite to the lifting mechanism in its moving direction, so that the second contact piece can move to a position in contact with the lifting mechanism; A control component, comprising a chuck controller for controlling the electrostatic chuck and a power supply for loading an electron beam onto the wafer, wherein the chuck controller is conductively connected to the first contact member; The wafer detection device has an adsorption state and a detection state. In the adsorption state, the second contact member is in contact with the first contact member and the lifting mechanism to connect the first contact member and the lifting mechanism, and the suction cup controller controls the electrostatic suction cup to adsorb the wafer. In the detection state, the first contact member and the second contact member are disconnected, the second contact member is disconnected from the lifting mechanism, and the power supply member loads an electron beam to the wafer.

2. The wafer inspection device according to claim 1, characterized in that: The first contact member includes an insulating plate and a fixed contact portion, the fixed contact portion is conductively connected to the suction cup controller, the second contact member is movably arranged in the up and down directions, the second contact member has a conductively connected moving rod and a first moving contact portion, the moving rod can drive the first moving contact portion to move within the coverage range of the insulating plate, and contact or separate from the fixed contact portion.

3. The wafer inspection device according to claim 1, characterized in that: The lifting mechanism comprises a transmission base and a transmission part connected to each other, the electrostatic chuck is mounted on the transmission base, and the transmission part protrudes from the edge of the electrostatic chuck and is arranged above the second contact member; Among them, in the adsorption state, the second contact piece is in a connecting position connected to the first contact piece, and the second contact piece is in contact with the transmission part; in the detection state, the second contact piece is in a first disconnecting position disconnected from the first contact piece, and the second contact piece is separated from the transmission part.

4. The wafer inspection device according to claim 3, characterized in that: The lifting mechanism is movably arranged in the up-down direction, and the wafer detection device also has a material picking state. In the material picking state, the second contact piece is in a second disconnected position disconnected from the first contact piece, the second contact piece is abutted against the transmission part, and the electrostatic chuck is in a material picking position; Among them, in the up-down direction, the first disconnection position is a low position, the connection position is a middle position higher than the first disconnection position, and the second disconnection position is a high position higher than the connection position.

5. The wafer inspection device according to claim 4, characterized in that: During the switching process of the wafer inspection device between the adsorption state and the material removal state, the second contact member always maintains an abutment state with the transmission part to drive the adsorption component to move along the up-down direction.

6. The wafer inspection device according to claim 2, characterized in that: The fixed contact portion is made of metal material, and a surface of the fixed contact portion facing the second contact piece has a contact groove. The first movable contact portion is fixed to the outer peripheral surface of the movable rod, and a surface of the first movable contact portion facing the fixed contact portion has a contact convex portion, the contact convex portion is adapted to the shape of the contact groove, and the contact convex portion is telescopically arranged on the surface of the first movable contact portion.

7. The wafer inspection device according to claim 2, characterized in that: The second contact member also includes a flexible driving portion connected to the moving rod, and the flexible driving portion can flexibly deform along the up and down directions to drive the moving rod to move. The control component also includes a driving member, and the driving member is conductively connected to the flexible driving portion through the conductive connecting member to drive the flexible driving portion to flexibly deform.

8. The wafer inspection device according to claim 1, characterized in that: The housing is used to define a vacuum environment, the control component is installed outside the housing, and the wafer inspection device further includes: A conductive connector is provided through the cavity wall of the housing, and the control component is conductively connected to the contact switch component through the conductive connector.

9. The wafer inspection device according to claim 8, characterized in that: The wafer inspection device also includes a detection circuit structure, which is arranged outside the shell and is conductively connected to the control component, and the detection circuit structure is respectively connected to the first contact member and the second contact member through the conductive connecting member, and is used to detect the induced voltage between the first contact member and the second contact member and control the control component according to the induced voltage.

10. The wafer inspection device according to claim 8, characterized in that: The shell also has an electron gun disposed toward the electrostatic chuck, and the electron gun is used to apply an electron beam to the surface of the wafer adsorbed by the electrostatic chuck. The power supply of the control component is conductively connected to the electron gun through the conductive connector to supply power to the electron gun.

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