Wafer detection focusing method and device, electronic equipment and computer storage medium

Abstract

The invention discloses a wafer detection focusing method and device, electronic equipment and a computer storage medium. The method comprises the following steps: when a target detection point of a to-be-detected wafer moves to an imaging center position of a detection camera, obtaining a wafer warping degree which is obtained by carrying out distance measurement on the target detection point and is corresponding to a distance measuring instrument; and controlling the detection camera to focus according to the wafer warping degree corresponding to the target detection point and the initial focal length of the detection camera, so that a to-be-detected wafer image shot by the detection camera at the target detection point meets a preset detection requirement, and the wafer detection speed and precision are improved. Meanwhile, the detection camera and the range finder are coaxial, the range finder is always located in front of the scanning path of the detection camera, an independent light path and the range finder are used for focusing, interference of irregular reflection or scattered light generated by the range finder focusing and ranging light path on an imaging light path of the detection camera is avoided, and the stability and reliability of wafer detection are improved.

Description

Technical Field

[0001] The present application relates to the field of wafer detection technology, and in particular to a wafer detection focusing method, device, electronic equipment and computer storage medium. Background Art

[0002] With the continuous development of semiconductor technology, the semiconductor manufacturing process has higher and higher requirements for precision, so that the detection capability of wafer inspection equipment determines the stability of semiconductor process precision detection. Only by accurately finding defects on the wafer can the health of the entire production line be guaranteed, thereby improving production efficiency.

[0003] Since the wafer surface is not completely flat, there may be slight height variations. As the wafer inspection equipment scans or flies, the focus may deviate from the correct position. Defect detection and quality control of the wafer surface require high-resolution images. If the focus is not accurate, the image will become blurred, making it difficult to identify tiny defects such as microcracks, particles or other surface unevenness. Summary of the invention

[0004] The embodiments of the present application provide a wafer detection focusing method, device, electronic device and computer storage medium, which not only reduces the time and error of wafer detection focusing and improves the speed and accuracy of wafer detection by controlling the detection camera to automatically focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera before scanning and photographing the wafer to be detected at the target detection point, but also uses an independent optical path and rangefinder to focus by making the detection camera and the rangefinder off-axis and the rangefinder always located in front of the scanning path of the detection camera, avoiding the interference of irregular reflection or scattered light generated by the rangefinder focusing and ranging optical path on the detection camera imaging optical path, thereby improving the stability and reliability of wafer detection. The technical solution is as follows:

[0005] In a first aspect, an embodiment of the present application provides a wafer detection focusing method, the method comprising:

[0006] When the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the wafer warpage corresponding to the target detection point is obtained; the wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder;

[0007] Controlling the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, so that the image of the wafer to be detected taken by the detection camera at the target detection point meets the preset detection requirements;

[0008] The rangefinder is located in a different axis from the detection camera and is always located in front of the scanning path of the detection camera.

[0009] In the embodiment of the present application, the wafer warpage at the target detection point of the wafer to be detected is first measured by the rangefinder on the scanning path, and then before scanning and photographing the wafer to be detected at the target detection point, the detection camera is controlled to automatically focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, so that the image of the wafer to be detected photographed by the detection camera at the target detection point meets the preset detection requirements, thereby ensuring that the detection camera can always accurately focus on the surface of the wafer to be detected, capture a clear image of the wafer to be detected, and improve the wafer detection accuracy, and can reduce the time and error of wafer detection focusing, thereby improving the wafer detection accuracy. At the same time, the detection camera and the rangefinder are off-axis and the rangefinder is always located in front of the scanning path of the detection camera, and an independent optical path and rangefinder are used for focusing, so as to avoid the interference of irregular reflection or scattered light generated by the rangefinder focusing and ranging optical path on the detection camera imaging optical path, thereby improving the stability and reliability of wafer detection.

[0010] In a possible implementation, when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the wafer warpage corresponding to the target detection point is obtained, including:

[0011] When the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the target distance measurement coordinates of the distance meter corresponding to the target detection point are determined according to the position deviation information between the detection camera and the distance meter and the current imaging coordinates of the detection camera;

[0012] The wafer warpage corresponding to the target detection point is determined according to the target ranging coordinates and the focus position compensation relationship; the ranging compensation relationship is generated based on the ranging coordinates corresponding to each detection point during the movement of the wafer to be detected by the rangefinder and the wafer warpage measured at each ranging coordinate.

[0013] In a possible implementation, the method further includes:

[0014] In the process of each detection point of the wafer to be detected being moved to the distance measurement center position of the distance meter in sequence, the distance meter is controlled to measure the distance of each detection point of the wafer to be detected in sequence to obtain the wafer warpage corresponding to each detection point;

[0015] The focus position compensation relationship is generated according to the wafer warpage of the wafer to be inspected corresponding to the measured detection point and the distance measurement coordinates of the distance meter corresponding to the measured detection point.

[0016] In a possible implementation, before scanning and photographing the wafer to be inspected at the target inspection point, controlling the inspection camera to focus according to the wafer warpage corresponding to the target inspection point and the initial focal length of the inspection camera includes:

[0017] Determine the target focal length compensation value corresponding to the detection camera according to the wafer warpage corresponding to the target detection point;

[0018] Determine the target detection focal length corresponding to the target detection point according to the target focal length compensation value and the initial focal length of the detection camera;

[0019] Before scanning and photographing the wafer to be inspected at the target inspection point, the focal length of the inspection camera is adjusted to the target inspection focal length.

[0020] In a possible implementation, the wafer to be inspected includes N layers; N is a positive integer greater than 1; and the method further includes:

[0021] Before scanning and photographing the i-th layer of the above-mentioned wafer to be inspected at the above-mentioned target detection point, the above-mentioned detection camera is controlled to focus according to the wafer warpage corresponding to the above-mentioned target detection point, the initial focal length of the above-mentioned detection camera, and the target distance between the first layer surface to the i-th layer surface of the above-mentioned wafer to be inspected, so that the image of the i-th layer of the wafer to be inspected taken by the above-mentioned detection camera at the above-mentioned target detection point meets the preset detection requirements; the above-mentioned i is a positive integer greater than 1 and less than or equal to N.

[0022] In a possible implementation, different inspection points of the wafer to be inspected correspond to different imaging coordinates of the inspection camera and different ranging coordinates of the rangefinder; different inspection points of the wafer to be inspected correspond to the same positional deviations between the imaging coordinates of the inspection camera and the ranging coordinates of the rangefinder.

[0023] In a possible implementation, during the process of the wafer to be inspected moving along a preset inspection path, the ranging center position of the rangefinder is always located before the imaging center position of the inspection camera, the distance between the ranging center position and the imaging center position is greater than a first threshold and less than a second threshold, and the second threshold is greater than the first threshold.

[0024] In the embodiment of the present application, during the process of the wafer to be inspected moving along the preset inspection path, the distance measurement center position of the rangefinder is always located before the imaging center position of the inspection camera, thereby ensuring that the inspection camera has measured the warpage corresponding to each inspection point through the rangefinder before scanning and shooting, ensuring that the inspection camera at each inspection point can achieve automatic focus according to the warpage, and ensuring the success rate and effectiveness of wafer inspection focus. In order to avoid the interference of irregular reflection or scattered light generated by the rangefinder focus distance measurement optical path on the imaging optical path of the inspection camera, the distance between the above-mentioned distance measurement center position and the imaging center position should be set to be greater than the first threshold, thereby ensuring that the focus distance measurement optical path of the rangefinder and the imaging optical path corresponding to the inspection camera can be independent of each other and do not interfere with each other; at the same time, in order to avoid the distance between the distance measurement center position and the imaging center position being too large, resulting in the actual scanning path of the inspection camera being too large to affect the inspection speed of the inspection camera, the distance between the above-mentioned distance measurement center position and the imaging center position should be set to be less than the second threshold, thereby achieving automatic focus during wafer inspection and ensuring the efficiency of wafer inspection to a certain extent.

[0025] In a second aspect, an embodiment of the present application provides a wafer detection focusing device, and the wafer detection focusing device includes:

[0026] An acquisition module is used to acquire the wafer warpage corresponding to the target detection point of the wafer to be detected when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera; the wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder;

[0027] A first focusing module is used to control the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera before scanning and photographing the wafer to be inspected at the target detection point, so that the image of the wafer to be inspected taken by the detection camera at the target detection point meets the preset detection requirements;

[0028] The rangefinder is located in a different axis from the detection camera and is always located in front of the scanning path of the detection camera.

[0029] In a possible implementation, the acquisition module includes:

[0030] A first determining unit is used to determine the target ranging coordinates of the rangefinder corresponding to the target detection point according to the position deviation information between the detection camera and the rangefinder and the current imaging coordinates of the detection camera when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera;

[0031] The second determination unit is used to determine the wafer warpage corresponding to the above-mentioned target detection point according to the above-mentioned target ranging coordinates and the focus position compensation relationship; the above-mentioned ranging compensation relationship is generated based on the ranging coordinates corresponding to each detection point during the movement of the above-mentioned wafer to be detected by the above-mentioned rangefinder and the wafer warpage measured at each of the above-mentioned ranging coordinates.

[0032] In a possible implementation, the wafer detection and focusing device further includes:

[0033] The distance measuring module is used to control the distance measuring instrument to measure the distance of each detection point of the wafer to be detected in sequence when each detection point of the wafer to be detected is moved to the distance measuring center position of the distance measuring instrument in sequence, so as to obtain the wafer warpage corresponding to each detection point;

[0034] A generating module is used to generate the focus position compensation relationship according to the wafer warpage of the above-mentioned wafer to be detected corresponding to the measured detection point and the distance measurement coordinates of the above-mentioned distance measurement device corresponding to the above-mentioned measured detection point.

[0035] In a possible implementation, the first focusing module includes:

[0036] A third determination unit is used to determine a target focal length compensation value corresponding to the detection camera according to the wafer warpage corresponding to the target detection point;

[0037] A fourth determining unit, configured to determine a target detection focal length corresponding to the target detection point according to the target focal length compensation value and the initial focal length of the detection camera;

[0038] The adjustment unit is used to adjust the focal length of the inspection camera to the target inspection focal length before scanning and photographing the wafer to be inspected at the target inspection point.

[0039] In a possible implementation, the wafer to be inspected includes N layers; N is a positive integer greater than 1; and the wafer inspection focusing device further includes:

[0040] The second focusing module is used to control the focusing of the detection camera according to the wafer warpage corresponding to the target detection point, the initial focal length of the detection camera and the target distance between the first layer surface to the i-th layer surface of the wafer to be detected before scanning and photographing the i-th layer of the wafer to be detected at the target detection point, so that the image of the i-th layer of the wafer to be detected photographed by the detection camera at the target detection point meets the preset detection requirements; the above i is a positive integer greater than 1 and less than or equal to N.

[0041] In a possible implementation, different inspection points of the wafer to be inspected correspond to different imaging coordinates of the inspection camera and different ranging coordinates of the rangefinder; different inspection points of the wafer to be inspected correspond to the same positional deviations between the imaging coordinates of the inspection camera and the ranging coordinates of the rangefinder.

[0042] In a possible implementation, during the process of the wafer to be inspected moving along a preset inspection path, the ranging center position of the rangefinder is always located before the imaging center position of the inspection camera, the distance between the ranging center position and the imaging center position is greater than a first threshold and less than a second threshold, and the second threshold is greater than the first threshold.

[0043] In a third aspect, an embodiment of the present application provides an electronic device, comprising: a processor and a memory; wherein the memory stores a computer program, and the computer program is suitable for being loaded by the processor and executing the method steps provided by the first aspect of the embodiment of the present application or any possible implementation of the first aspect.

[0044] In a fourth aspect, an embodiment of the present application provides a computer storage medium, which stores multiple instructions, and the instructions are suitable for being loaded by a processor and executing the method steps provided by the first aspect of the embodiment of the present application or any possible implementation of the first aspect.

[0045] It can be understood that the wafer detection and focusing device provided by the second aspect, the electronic device provided by the third aspect, and the computer storage medium provided by the fourth aspect are all used to execute the wafer detection and focusing method provided by the first aspect or any one of the implementations of the first aspect. Therefore, the beneficial effects that can be achieved can refer to the beneficial effects in the wafer detection and focusing method provided by the first aspect or any one of the implementations of the first aspect, and will not be repeated here.

[0046] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1A schematic diagram of the architecture of a wafer detection and focusing system provided by an exemplary embodiment of the present application;

[0049] Figure 2 A schematic flow chart of a wafer detection focusing method provided by an exemplary embodiment of the present application;

[0050] Figure 3 A schematic diagram of imaging coordinates and ranging coordinates provided for an exemplary embodiment of the present application;

[0051] Figure 4 A schematic diagram of an implementation flow of controlling a detection camera to focus provided by an exemplary embodiment of the present application;

[0052] Figure 5 A schematic flow chart of another wafer detection focusing method provided by an exemplary embodiment of the present application;

[0053] Figure 6 A schematic structural diagram of a wafer detection focusing device provided by an exemplary embodiment of the present application;

[0054] Figure 7 A schematic structural diagram of an electronic device provided as an exemplary embodiment of the present application. DETAILED DESCRIPTION

[0055] In order to make the features and advantages of the present application more obvious and easy to understand, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0056] The terms "first", "second", "third", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices.

[0057] Please refer to the following Figure 1 , which is a schematic diagram of the architecture of a wafer detection and focusing system provided by an exemplary embodiment of this specification. Figure 1As shown, the wafer inspection focusing system includes: a processor 110, an inspection camera 120, a rangefinder 130 and a wafer inspection stage 140. Among them:

[0058] The wafer inspection stage 140 is used to carry the wafer 150 to be inspected and drive the carried wafer 150 to be inspected to move along a preset inspection path.

[0059] The inspection camera 120 may include, but is not limited to, a high-resolution image sensor for scanning and photographing the wafer 150 to be inspected on the wafer inspection stage 140 to obtain an image of the wafer 150 to be inspected corresponding to each inspection point of the wafer 150 to be inspected.

[0060] The rangefinder 130 can be, but is not limited to, a stationary laser rangefinder, an ultrasonic rangefinder, or an infrared rangefinder, etc., which is used to measure the warpage of the surface of the wafer 150 to be inspected on the wafer inspection stage 140; the rangefinder 130 and the inspection camera 120 are off-axis, and by using an independent optical path and rangefinder focus, irregular reflections or scattered light generated by the rangefinder focus and ranging optical path are avoided from interfering with the imaging optical path of the inspection camera, thereby improving the stability and reliability of wafer inspection; and the rangefinder 130 is always located in front of the scanning path of the inspection camera 120 to ensure that the inspection camera 120 will obtain the wafer warpage corresponding to each inspection point before scanning and shooting each inspection point of the wafer 150 to achieve automatic focus.

[0061] The processor 110 is respectively connected to the inspection camera 120, the rangefinder 130 and the wafer inspection stage 140, and can be used to control the wafer 150 to be inspected to drive the wafer 150 to be inspected to move according to a preset inspection path, and when the target inspection point of the wafer 150 to be inspected moves to the imaging center position of the inspection camera 120, obtain the wafer warpage corresponding to the target inspection point obtained by the rangefinder 130; before scanning and photographing the wafer 150 to be inspected at the above-mentioned target inspection point, control the above-mentioned inspection camera 120 to focus according to the wafer warpage corresponding to the above-mentioned target inspection point and the initial focal length of the above-mentioned inspection camera 120, so that the image of the wafer to be inspected taken by the above-mentioned inspection camera 120 at the above-mentioned target inspection point meets the preset inspection requirements.

[0062] Next, combine Figure 1 , taking the processor of the wafer detection and focusing system executing the wafer detection and focusing as an example, the wafer detection and focusing method provided by an exemplary embodiment of the present application is introduced. For details, please refer to Figure 2 , which is a flow chart of a wafer detection focusing method provided by an exemplary embodiment of the present application. Figure 2 As shown, the wafer detection focusing method may include the following steps:

[0063] S201, when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the wafer warpage corresponding to the target detection point is obtained, and the wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder.

[0064] Specifically, the wafer warpage is used to characterize the degree of bending or distortion of the wafer to be tested caused by the accumulation of thermal mechanical stress during processing or packaging.

[0065] Optionally, when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the target distance measurement coordinates of the distance meter corresponding to the target detection point can be determined based on the position deviation information of the detection camera and the distance meter and the current imaging coordinates of the detection camera. The above-mentioned position deviation information may include, but is not limited to, the position coordinate deviation value of the detection camera and the distance meter in the wafer scanning direction. When the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the target distance measurement scanning coordinates of the distance meter corresponding to the target detection point can be determined based on, but not limited to, the position coordinate deviation value of the detection camera and the distance meter in the wafer scanning direction and the current imaging scanning coordinates of the detection camera in the wafer scanning direction. There is no position coordinate deviation between the detection camera and the distance meter in the wafer line-breaking direction, that is, the current imaging line-breaking coordinates of the detection camera in the wafer line-breaking direction are equal to the target distance measurement line-breaking coordinates of the distance meter in the wafer line-breaking direction. The above-mentioned target distance measurement coordinates can be composed of the above-mentioned target distance measurement scanning coordinates and the target distance measurement line-breaking coordinates.

[0066] Then, the wafer warpage corresponding to the target detection point is determined according to the target distance measurement coordinates and the focus position compensation relationship. The above distance measurement compensation relationship is generated based on the distance measurement coordinates corresponding to each detection point during the movement of the wafer to be detected and the wafer warpage measured at each distance measurement coordinate.

[0067] In some possible embodiments, a plurality of detection points that need to be scanned and detected are pre-set on the wafer to be detected. In the process of each detection point of the wafer to be detected being moved to the distance measurement center position of the rangefinder in sequence, the rangefinder can be controlled to measure the distance of each detection point of the wafer to be detected in sequence to obtain the wafer warpage corresponding to each detection point; then, the focus position compensation relationship corresponding to the wafer to be detected is generated according to the wafer warpage corresponding to the distance-measured detection point of the wafer to be detected and the distance measurement coordinates of the rangefinder corresponding to the distance-measured detection point, so that the detection camera can be controlled to automatically focus according to the focus position compensation relationship.

[0068] For example, Figure 3As shown, since the rangefinder 130 and the detection camera 120 are off-axis and the rangefinder 130 is always located in front of the scanning path of the detection camera 120, when the wafer 150 to be detected moves to the left, its detection point 310 will first move to the distance measurement center position of the rangefinder 130 (such as Figure 3 As shown in the left figure, the rangefinder 130 measures the distance of the detection point 310 surface of the wafer 150 to be detected to obtain the corresponding warpage d(x1,y1). At this time, the corresponding ranging scanning coordinates of the rangefinder 130 are (x1,y1), x1 is the ranging scanning coordinates corresponding to the rangefinder 130 when measuring the distance of the detection point 310 surface of the wafer 150 to be detected, and y1 is the ranging line feed coordinates corresponding to the rangefinder 130 when measuring the distance of the detection point 310 surface of the wafer 150 to be detected. After the warping degree d(x1, y1) corresponding to the detection point 310 is measured by the rangefinder 130, the ranging scanning coordinates (x1, y1) corresponding to the detection point 310 and the warping degree d(x1, y1) are also associated and stored, for example but not limited to generating a focus position compensation relationship based on the ranging scanning coordinates (x1, y1) corresponding to the detection point 310 and the warping degree d(x1, y1).

[0069] Then, the inspection point 310 of the wafer 150 to be inspected is moved to the imaging center position of the inspection camera 120 (eg Figure 3 As shown in the right figure), the detection camera 120 needs to focus on the detection point 310 and then scan and shoot the wafer 150 to be detected to obtain the corresponding wafer image to be detected. At this time, the current imaging coordinates corresponding to the detection camera 120 are (x0, y1), where x0 is the current imaging scanning coordinate corresponding to when the detection camera 120 scans and shoots the wafer 150 to be detected at the detection point 310, and y1 is the current imaging line break coordinate corresponding to when the detection camera 120 scans and shoots the wafer 150 to be detected at the detection point 310. And, as Figure 3 As shown in the right figure, when the detection point 310 of the wafer 150 to be detected moves to the imaging center position of the detection camera 120, the next detection point 320 of the wafer 150 to be detected will move to the distance measurement center position of the rangefinder 130 for distance measurement, and obtain the corresponding warpage d(x2, y1), and the distance measurement scanning coordinates (x2, y1) corresponding to the detection point 320 are associated and stored with the warpage d(x2, y1), that is, the above-mentioned focus position compensation relationship is updated. That is, the focus position compensation relationship corresponding to the wafer 150 to be detected will be updated as the number of detection points that have been measured by the rangefinder 130 is updated.

[0070] Since there is a position coordinate deviation value 330 between the same inspection camera 120 and the rangefinder 130 in the wafer scanning direction, and for the same inspection point 310, the current imaging coordinates of the inspection camera 120 (x0, y1) are different from the ranging scanning coordinates of the rangefinder 130 (x1, y1), in order to obtain the warpage at the inspection point 310, it is necessary to first map the current imaging coordinates (x0, y1) of the inspection camera 120, for example but not limited to, according to the position coordinate deviation 330 (i.e. D=x2-x0) between the inspection camera 120 and the rangefinder 130 in the wafer scanning direction and the current imaging scanning coordinate x0 of the inspection camera 120 in the wafer scanning direction, determine that the ranging scanning coordinates of the rangefinder 130 corresponding to the inspection point 310 are x0+D (i.e. x1), thereby determining that the ranging coordinates of the rangefinder 130 corresponding to the inspection point 310 are (x0+D, y1), i.e. (x1, y1). Finally, the corresponding warping degree d(x1, y1) can be found in the above focus position compensation relationship according to the corresponding (x1, y1) at the detection point 310.

[0071] Exemplarily, the focus position compensation relationship corresponding to the wafer to be inspected may be, but is not limited to, as shown in Table 1:

[0072] Table 1 Correspondence between the distance measurement coordinates of each detection point and the wafer warpage during the movement of the wafer to be detected

[0073]

[0074] Among them, xm represents the ranging scanning coordinates of the mth detection point in the wafer scanning direction, yn represents the ranging line-changing coordinates of the nth detection point in the wafer line-changing direction, and d(m, n) represents the warpage corresponding to the detection point with the ranging coordinates (m, n).

[0075] Optionally, when the target detection point of the wafer to be detected is moved to the imaging center position of the detection camera, the wafer warpage corresponding to the target detection point can also be directly found from the detection point compensation relationship according to the identification of the target detection point. The above detection point compensation relationship is used to characterize the correspondence between the identification corresponding to each detection point of the wafer to be detected and the warpage obtained by the rangefinder at each detection point to measure the surface of the wafer to be detected.

[0076] It can be understood that different detection points of the wafer to be detected have different corresponding imaging coordinates of the detection camera and different corresponding ranging coordinates of the rangefinder. Different detection points of the wafer to be detected have the same position deviation between the imaging coordinates of the detection camera and the ranging coordinates of the rangefinder. The scanning shooting frequency corresponding to the detection camera is the same as the focusing ranging frequency corresponding to the rangefinder.

[0077] In some possible embodiments, during the process of the wafer to be inspected moving along the preset inspection path, the distance measurement center position of the rangefinder is always located before the imaging center position of the inspection camera, thereby ensuring that the inspection camera has measured the warpage corresponding to each inspection point through the rangefinder before scanning and shooting, ensuring that the inspection camera at each inspection point can achieve automatic focus according to the warpage, and ensuring the success rate and effectiveness of wafer inspection focus. In order to avoid the interference of irregular reflection or scattered light generated by the rangefinder's focusing and distance measurement optical path on the imaging optical path of the inspection camera, the distance between the above-mentioned distance measurement center position and the imaging center position should be set to be greater than the first threshold, thereby ensuring that the focusing and distance measurement optical path of the rangefinder and the imaging optical path corresponding to the inspection camera can be independent of each other and do not interfere with each other; at the same time, in order to avoid the distance between the distance measurement center position and the imaging center position being too large, resulting in the actual scanning path of the inspection camera being too large and affecting the inspection speed of the inspection camera, the distance between the above-mentioned distance measurement center position and the imaging center position should be set to be less than the second threshold, thereby achieving automatic focus during wafer inspection and ensuring the efficiency of wafer inspection to a certain extent. The above-mentioned second threshold is greater than the first threshold.

[0078] Please continue to refer to Figure 2 ,like Figure 2 As shown, in the above S201, when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, after obtaining the wafer warpage corresponding to the target detection point, the wafer detection focusing method further includes:

[0079] S202, controlling the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, so that the image of the wafer to be detected taken by the detection camera at the target detection point meets the preset detection requirements.

[0080] Specifically, the rangefinder is off-axis from the detection camera and the rangefinder is always located in front of the scanning path of the detection camera. The preset detection requirements may include, but are not limited to, the clarity of the image of the wafer to be detected being greater than a threshold. Figure 4 As shown, the implementation process of the above S202, controlling the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, may include but is not limited to:

[0081] S401, determining a target focal length compensation value corresponding to a detection camera according to a wafer warpage corresponding to a target detection point.

[0082] Specifically, after obtaining the wafer warpage corresponding to the target detection point, the wafer warpage corresponding to the target detection point can be converted into a target focal length compensation value corresponding to the detection camera according to the correspondence between the focal length compensation value corresponding to the detection camera and the wafer warpage measured by the rangefinder (for example, but not limited to a conversion function, a conversion formula, a mapping table, etc.). The above-mentioned target focal length compensation value is used to characterize the distance by which the focal length of the detection camera needs to be adjusted at the target detection point of the wafer to be detected.

[0083] S402, determining a target detection focal length corresponding to a target detection point according to a target focal length compensation value and an initial focal length of a detection camera.

[0084] Specifically, the above-mentioned initial focal length can be the focal length corresponding to when the detection camera can capture the clearest image when the distance between the detection camera and the surface of the wafer to be detected is at a preset standard distance, or it can be a focal length pre-set according to the distance between the detection camera and the wafer to be detected, and the embodiment of the present application does not limit this. After obtaining the target focal length compensation value at the target detection point, the target focal length compensation value can be directly summed with the initial focal length of the detection camera to obtain the target detection focal length corresponding to the target detection point.

[0085] S403, before scanning and photographing the wafer to be inspected at the target inspection point, adjusting the focal length of the inspection camera to the target inspection focal length.

[0086] Specifically, before scanning and photographing the wafer to be inspected at the target inspection point, the focal length of the inspection camera needs to be adjusted to the target inspection focal length so that the image of the wafer to be inspected taken by the inspection camera at the target inspection point meets the preset inspection requirements.

[0087] In the embodiment of the present application, the wafer warpage at the target detection point of the wafer to be detected is first measured by the rangefinder on the scanning path, and then before scanning and photographing the wafer to be detected at the target detection point, the detection camera is controlled to automatically focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, so that the image of the wafer to be detected photographed by the detection camera at the target detection point meets the preset detection requirements, thereby ensuring that the detection camera can always accurately focus on the surface of the wafer to be detected, capture a clear image of the wafer to be detected, and improve the wafer detection accuracy, and can reduce the time and error of wafer detection focusing, thereby improving the wafer detection accuracy. At the same time, the detection camera and the rangefinder are off-axis and the rangefinder is always located in front of the scanning path of the detection camera, and an independent optical path and rangefinder are used for focusing, so as to avoid the interference of irregular reflection or scattered light generated by the rangefinder focusing and ranging optical path on the detection camera imaging optical path, thereby improving the stability and reliability of wafer detection.

[0088] Please refer to the following Figure 5, which is a flow chart of another wafer detection focusing method provided by an exemplary embodiment of the present application. Figure 5 As shown, the wafer detection focusing method may include the following steps:

[0089] S501, when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the wafer warpage corresponding to the target detection point is obtained, and the wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder.

[0090] Specifically, S501 is consistent with S201 and will not be described in detail here.

[0091] S502, before scanning and photographing the i-th layer of the wafer to be inspected at the target inspection point, the inspection camera is controlled to focus according to the wafer warpage corresponding to the target inspection point, the initial focal length of the inspection camera, and the target distance between the first layer surface and the i-th layer surface of the wafer to be inspected, so that the image of the i-th layer of the wafer to be inspected taken by the inspection camera at the target inspection point meets the preset inspection requirements.

[0092] Specifically, the wafer to be inspected includes N layers, where N is a positive integer greater than 1. When it is necessary to inspect the i-th layer below the first layer of the wafer to be inspected, before scanning and photographing the i-th layer of the wafer to be inspected at the target inspection point, the target inspection focal length of the i-th layer corresponding to the target inspection point can be directly determined according to the wafer warpage corresponding to the target inspection point, the initial focal length of the inspection camera, and the target distance between the first layer surface and the i-th layer surface of the wafer to be inspected. Therefore, there is no need to readjust the rangefinder for distance measurement, and there is no need for the user to readjust the inspection camera for manual focus. The inspection camera can be directly controlled to focus according to the target inspection focal length of the i-th layer corresponding to the target inspection point, so that the image of the i-th layer of the wafer to be inspected taken by the inspection camera at the target inspection point meets the preset inspection requirements, thereby improving the flexibility, efficiency and convenience of wafer inspection focusing. The above i is a positive integer greater than 1 and less than or equal to N.

[0093] Please refer to the following Figure 6 , which is a schematic diagram of the structure of a wafer detection focusing device provided by an exemplary embodiment of the present application. Figure 6 As shown, the wafer detection focusing device 600 includes:

[0094] The acquisition module 610 is used to acquire the wafer warpage corresponding to the target detection point when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera; the wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder;

[0095] A first focusing module 620, used for controlling the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, so that the image of the wafer to be detected taken by the detection camera at the target detection point meets the preset detection requirements;

[0096] The rangefinder is located in a different axis from the detection camera and is always located in front of the scanning path of the detection camera.

[0097] In a possible implementation, the acquisition module 610 includes:

[0098] A first determining unit is used to determine the target ranging coordinates of the rangefinder corresponding to the target detection point according to the position deviation information between the detection camera and the rangefinder and the current imaging coordinates of the detection camera when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera;

[0099] The second determination unit is used to determine the wafer warpage corresponding to the above-mentioned target detection point according to the above-mentioned target ranging coordinates and the focus position compensation relationship; the above-mentioned ranging compensation relationship is generated based on the ranging coordinates corresponding to each detection point during the movement of the above-mentioned wafer to be detected by the above-mentioned rangefinder and the wafer warpage measured at each of the above-mentioned ranging coordinates.

[0100] In a possible implementation, the wafer detection and focusing device 600 further includes:

[0101] The distance measuring module is used to control the distance measuring instrument to measure the distance of each detection point of the wafer to be detected in sequence when each detection point of the wafer to be detected is moved to the distance measuring center position of the distance measuring instrument in sequence, so as to obtain the wafer warpage corresponding to each detection point;

[0102] A generating module is used to generate the focus position compensation relationship according to the wafer warpage of the above-mentioned wafer to be detected corresponding to the measured detection point and the distance measurement coordinates of the above-mentioned distance measurement device corresponding to the above-mentioned measured detection point.

[0103] In a possible implementation, the first focusing module 620 includes:

[0104] A third determination unit is used to determine a target focal length compensation value corresponding to the detection camera according to the wafer warpage corresponding to the target detection point;

[0105] A fourth determining unit, configured to determine a target detection focal length corresponding to the target detection point according to the target focal length compensation value and the initial focal length of the detection camera;

[0106] The adjustment unit is used to adjust the focal length of the inspection camera to the target inspection focal length before scanning and photographing the wafer to be inspected at the target inspection point.

[0107] In a possible implementation, the wafer to be inspected includes N layers; N is a positive integer greater than 1; the wafer inspection focusing device 600 further includes:

[0108] The second focusing module is used to control the focusing of the detection camera according to the wafer warpage corresponding to the target detection point, the initial focal length of the detection camera and the target distance between the first layer surface to the i-th layer surface of the wafer to be detected before scanning and photographing the i-th layer of the wafer to be detected at the target detection point, so that the image of the i-th layer of the wafer to be detected photographed by the detection camera at the target detection point meets the preset detection requirements; the above i is a positive integer greater than 1 and less than or equal to N.

[0109] In a possible implementation, different inspection points of the wafer to be inspected correspond to different imaging coordinates of the inspection camera and different ranging coordinates of the rangefinder; different inspection points of the wafer to be inspected correspond to the same positional deviations between the imaging coordinates of the inspection camera and the ranging coordinates of the rangefinder.

[0110] In a possible implementation, during the process of the wafer to be inspected moving along a preset inspection path, the ranging center position of the rangefinder is always located before the imaging center position of the inspection camera, the distance between the ranging center position and the imaging center position is greater than a first threshold and less than a second threshold, and the second threshold is greater than the first threshold.

[0111] The division of the modules in the above-mentioned wafer detection and focusing device is only for illustration. In other embodiments, the wafer detection and focusing device can be divided into different modules as needed to complete all or part of the functions of the above-mentioned wafer detection and focusing device. The implementation of each module in the wafer detection and focusing device provided in the embodiment of the present application may be in the form of a computer program. The computer program can be run on an electronic device. The program modules constituted by the computer program can be stored in the memory of the electronic device. When the computer program is executed by the processor, all or part of the steps of the wafer detection and focusing method described in the embodiment of the present application are implemented.

[0112] See next Figure 7 , which is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. Figure 7 As shown, the electronic device 700 includes: at least one processor 710 , at least one communication bus 720 , a user interface 730 , at least one network interface 740 , a memory 750 , a detection camera 760 , and a rangefinder 770 .

[0113] The communication bus 720 may be used to realize the connection and communication among the above-mentioned components.

[0114] The user interface 730 may include a display screen (Display) and a camera (Camera). Optionally, the user interface 730 may also include a standard wired interface and a wireless interface.

[0115] The network interface 740 may include a Bluetooth module, a Near Field Communication (NFC) module, a Wireless Fidelity (Wi-Fi) module, and the like.

[0116] The detection camera 760 may include, but is not limited to, a high-resolution image sensor for scanning and photographing the wafer to be detected to obtain an image of the wafer to be detected corresponding to each detection point of the wafer to be detected;

[0117] The rangefinder 770 may be, but is not limited to, a laser rangefinder, an ultrasonic rangefinder, an infrared rangefinder, etc., and is used to measure the warpage of the surface of the wafer to be inspected;

[0118] Among them, the processor 710 may include one or more processing cores. The processor 710 uses various interfaces and lines to connect various parts within the entire electronic device 700, and executes various functions and processes data of the electronic device 700 by running or executing instructions, programs, code sets or instruction sets stored in the memory 750, and calling data stored in the memory 750. Optionally, the processor 710 can be implemented in at least one hardware form of digital signal processing (Digital Signal Processing, DSP), field programmable gate array (Field-Programmable Gate Array, FPGA), and programmable logic array (Programmable Logic Array, PLA). The processor 710 can integrate one or a combination of a processor (Central Processing Unit, CPU), a graphics processor (Graphics Processing Unit, GPU) and a modem. Among them, the CPU mainly processes the operating system, user interface and application programs; the GPU is responsible for rendering and drawing the content to be displayed on the display screen; the modem is used to process wireless communications. It can be understood that the above-mentioned modem may not be integrated into the processor 710, and it can be implemented separately through a chip.

[0119] Among them, the memory 750 may include a random access memory (Random Access Memory, RAM) and may also include a read-only memory (Read-Only Memory, ROM). Optionally, the memory 750 includes a non-transitory computer-readable medium. The memory 750 can be used to store instructions, programs, codes, code sets or instruction sets. The memory 750 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as wafer detection focus function, ranging function, acquisition function, etc.), instructions for implementing the above-mentioned various method embodiments, etc.; the data storage area may store data involved in the above-mentioned various method embodiments, etc. The memory 750 may also be at least one storage device located away from the aforementioned processor 710. As Figure 7 As shown, the memory 750 as a computer storage medium may include an operating system, a network communication module, a user interface module, and program instructions.

[0120] Specifically, the processor 710 may be used to call the program instructions stored in the memory 750, and specifically perform the following operations:

[0121] When the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the wafer warpage corresponding to the above target detection point is obtained; the above wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder.

[0122] The detection camera is controlled to focus according to the wafer warpage corresponding to the above-mentioned target detection point and the initial focal length of the above-mentioned detection camera, so that the image of the wafer to be inspected taken by the above-mentioned detection camera at the above-mentioned target detection point meets the preset detection requirements; wherein the above-mentioned rangefinder is off-axis from the above-mentioned detection camera and the above-mentioned rangefinder is always located in front of the scanning path of the above-mentioned detection camera.

[0123] In some possible embodiments, when the processor 710 executes the above-mentioned operation of obtaining the wafer warpage corresponding to the target detection point when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, it is specifically used to execute:

[0124] When the target detection point of the wafer to be inspected moves to the imaging center position of the detection camera, the target ranging coordinates of the rangefinder corresponding to the target detection point are determined according to the position deviation information between the detection camera and the rangefinder and the current imaging coordinates of the detection camera.

[0125] The wafer warpage corresponding to the target detection point is determined according to the target ranging coordinates and the focus position compensation relationship; the ranging compensation relationship is generated based on the ranging coordinates corresponding to each detection point during the movement of the wafer to be detected by the rangefinder and the wafer warpage measured at each ranging coordinate.

[0126] In some possible embodiments, the processor 710 is further configured to execute:

[0127] In the process of each detection point of the wafer to be detected moving to the distance measurement center position of the distance meter in sequence, the distance meter is controlled to measure the distance of each detection point of the wafer to be detected in sequence to obtain the wafer warpage corresponding to each detection point.

[0128] The focus position compensation relationship is generated according to the wafer warpage of the wafer to be inspected corresponding to the measured detection point and the distance measurement coordinates of the distance meter corresponding to the measured detection point.

[0129] In some possible embodiments, when the processor 710 controls the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, it is specifically used to execute:

[0130] The target focal length compensation value corresponding to the above-mentioned detection camera is determined according to the wafer warpage corresponding to the above-mentioned target detection point.

[0131] The target detection focal length corresponding to the target detection point is determined according to the target focal length compensation value and the initial focal length of the detection camera.

[0132] Before scanning and photographing the wafer to be inspected at the target inspection point, the focal length of the inspection camera is adjusted to the target inspection focal length.

[0133] In some possible embodiments, the wafer to be inspected includes N layers; N is a positive integer greater than 1; and the processor 710 is further configured to execute:

[0134] Before scanning and photographing the i-th layer of the above-mentioned wafer to be inspected at the above-mentioned target detection point, the above-mentioned detection camera is controlled to focus according to the wafer warpage corresponding to the above-mentioned target detection point, the initial focal length of the above-mentioned detection camera, and the target distance between the first layer surface to the i-th layer surface of the above-mentioned wafer to be inspected, so that the image of the i-th layer of the wafer to be inspected taken by the above-mentioned detection camera at the above-mentioned target detection point meets the preset detection requirements; the above-mentioned i is a positive integer greater than 1 and less than or equal to N.

[0135] In some possible embodiments, different inspection points of the wafer to be inspected correspond to different imaging coordinates of the inspection camera and different ranging coordinates of the rangefinder; different inspection points of the wafer to be inspected correspond to the same position deviation between the imaging coordinates of the inspection camera and the ranging coordinates of the rangefinder.

[0136] In some possible embodiments, when the wafer to be inspected moves along a preset inspection path, the ranging center position of the rangefinder is always located before the imaging center position of the inspection camera, and the distance between the ranging center position and the imaging center position is greater than a first threshold and less than a second threshold, and the second threshold is greater than the first threshold.

[0137] The embodiment of the present application also provides a computer storage medium, which stores instructions, and when the instructions are executed on a computer or a processor, the computer or the processor executes one or more steps in any of the above methods. If the various component modules of the above wafer detection and focusing device are implemented in the form of software functional units and sold or used as independent products, they can be stored in the storage medium.

[0138] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions may be stored in a computer-readable storage medium or transmitted through the computer-readable storage medium. The computer instructions may be transmitted from a website site, a computer, a server or a data center to another website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or a data center that includes one or more available media integrated. The available medium may be a magnetic medium, (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid state drive (SSD)), etc.

[0139] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program, and the program can be stored in a computer-readable storage medium. When the program is executed, it can include the processes of the embodiments of the above-mentioned methods. The aforementioned storage medium includes: ROM, RAM, magnetic disk or optical disk and other media that can store program codes. In the absence of conflict, the technical features in this embodiment and the implementation scheme can be combined arbitrarily.

[0140] The embodiments described above are merely descriptions of the preferred embodiments of the present application, and are not intended to limit the scope of the present application. Without departing from the design spirit of the present application, various modifications and improvements made to the technical solutions of the present application by ordinary technicians in this field should all fall within the scope of protection determined by the claims of the present application.

Claims

1. A wafer detection focusing method, characterized in that: The method comprises: When the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the wafer warpage corresponding to the target detection point is obtained; the wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder; Controlling the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, so that the image of the wafer to be detected taken by the detection camera at the target detection point meets the preset detection requirements; The rangefinder is off-axis from the detection camera and the rangefinder is always located in front of the scanning path of the detection camera.

2. The method according to claim 1, characterized in that When the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the wafer warpage corresponding to the target detection point is obtained, including: When the target detection point of the wafer to be detected moves to the imaging center position of the detection camera, the target ranging coordinates of the rangefinder corresponding to the target detection point are determined according to the position deviation information between the detection camera and the rangefinder and the current imaging coordinates of the detection camera; The wafer warpage corresponding to the target detection point is determined according to the target ranging coordinates and the focus position compensation relationship; the ranging compensation relationship is generated based on the ranging coordinates corresponding to each detection point during the movement of the wafer to be detected and the wafer warpage measured at each ranging coordinate.

3. The method according to claim 2, characterized in that The method further comprises: In the process of each detection point of the wafer to be detected moving to the distance measurement center position of the distance meter in sequence, controlling the distance meter to measure the distance of each detection point of the wafer to be detected in sequence to obtain the wafer warpage corresponding to each detection point; The focus position compensation relationship is generated according to the wafer warpage of the wafer to be inspected corresponding to the measured detection point and the distance measurement coordinates of the distance meter corresponding to the measured detection point.

4. The method according to claim 1, characterized in that The controlling the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera comprises: Determining a target focal length compensation value corresponding to the detection camera according to a wafer warpage corresponding to the target detection point; Determining the target detection focal length corresponding to the target detection point according to the target focal length compensation value and the initial focal length of the detection camera; Before scanning and photographing the wafer to be inspected at the target inspection point, the focal length of the inspection camera is adjusted to the target inspection focal length.

5. The method according to claim 1, characterized in that The wafer to be inspected includes N layers; N is a positive integer greater than 1; and the method further includes: Before scanning and photographing the i-th layer of the wafer to be inspected at the target detection point, the detection camera is controlled to focus according to the wafer warpage corresponding to the target detection point, the initial focal length of the detection camera, and the target distance between the first layer surface and the i-th layer surface of the wafer to be inspected, so that the image of the i-th layer of the wafer to be inspected taken by the detection camera at the target detection point meets the preset detection requirements; i is a positive integer greater than 1 and less than or equal to N.

6. The method according to any one of claims 1 to 5, characterized in that: Different inspection points of the wafer to be inspected correspond to different imaging coordinates of the inspection camera and different ranging coordinates of the rangefinder; different inspection points of the wafer to be inspected correspond to the same position deviation between the imaging coordinates of the inspection camera and the ranging coordinates of the rangefinder.

7. The method according to claim 1, characterized in that During the process of the wafer to be inspected moving along the preset inspection path, the ranging center position of the rangefinder is always located before the imaging center position of the inspection camera, the distance between the ranging center position and the imaging center position is greater than a first threshold and less than a second threshold, and the second threshold is greater than the first threshold.

8. A wafer detection focusing device, characterized in that: include: An acquisition module, used for acquiring the wafer warpage corresponding to the target detection point when the target detection point of the wafer to be detected moves to the imaging center position of the detection camera; The wafer warpage is obtained by measuring the distance of the target detection point of the wafer to be detected by a rangefinder; A first focusing module, used for controlling the detection camera to focus according to the wafer warpage corresponding to the target detection point and the initial focal length of the detection camera, so that the image of the wafer to be detected taken by the detection camera at the target detection point meets the preset detection requirements; The rangefinder is off-axis from the detection camera and the rangefinder is always located in front of the scanning path of the detection camera.

9. An electronic device, characterized in that: include: A processor and a memory; wherein the memory stores an executable program code, and the processor runs a program corresponding to the executable program code by reading the executable program code stored in the memory, so as to execute the method according to any one of claims 1 to 7.

10. A computer storage medium, characterized in that: The computer storage medium stores a plurality of instructions, which are suitable for being loaded by a processor and executing the method steps according to any one of claims 1-7.

Images