Process chamber and semiconductor process equipment

Abstract

The invention provides a process chamber and semiconductor process equipment, the process chamber comprises a chamber body, an air inlet structure and an exhaust structure, and the side wall of the chamber body is provided with a wafer conveying port and an air inlet opposite to the wafer conveying port; the gas inlet structure comprises a gas inlet hole, a first gas chamber and a second gas chamber, the gas inlet hole is used for introducing reaction gas and is communicated with the first gas chamber, the first gas chamber is communicated with the second gas chamber through a plurality of first gas uniformizing holes, and the second gas chamber is communicated with the gas inlet through a plurality of second gas uniformizing holes; the axes of the first air uniformizing hole and the second air uniformizing hole are respectively parallel to the wafer in the chamber body; the exhaust structure is provided with an exhaust channel which is communicated with the wafer conveying port. According to the process chamber disclosed by the invention, the reaction gas can be fed in the horizontal direction in the first gas chamber connected with the gas inlet hole and then enters the process chamber in a layer-by-layer uniform flow manner, so that the uniformity of a gas flow field in a process area in the process chamber and the uniformity of the process are improved, and the process quality is further improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor process equipment, and more specifically, relates to a process chamber and semiconductor process equipment. Background Art

[0002] Rapid Thermal Processing (RTP) is an advanced single-wafer heat treatment process. Compared with the traditional batch heat treatment process, it first appeared due to the need of material research. It has now been widely used in semiconductor production processes such as integrated circuits and MEMS. Its typical applications include rapid thermal annealing RTA, rapid thermal oxidation RTO and rapid thermal chemical vapor deposition RTCVD. Rapid thermal annealing is generally used to activate doping elements in semiconductor materials and restore the amorphous structure caused by ion implantation to a complete lattice structure. In particular, as semiconductors develop towards deep submicron, the requirements for advanced process mechanical design are becoming more and more stringent, and how to improve the uniformity of wafer thin films is crucial.

[0003] At present, the air intake device of the process equipment adopts a single-hole automatic diversion and multiple small-hole air intake method to introduce the reaction gas into the process chamber, that is, the reaction gas enters the air intake plug from an air intake hole, and then diffuses into the process chamber through multiple air outlet holes on the air intake plug. Since the air intake position is on the same side as the wafer transfer port, in order not to affect the wafer transfer, the vertical uniform airflow enters the chamber and then changes to a horizontal direction. The airflow will be turbulent, affecting the uniformity of gas diffusion, resulting in uneven film thickness on the wafer surface, such as Figure 1 shown. Summary of the invention

[0004] The purpose of the embodiments of the present invention is to provide a process chamber and semiconductor process equipment, aiming to solve the technical problem in the prior art that the air inlet position and the film transfer port position are on the same side, causing air flow turbulence when the vertical air flow turns to the horizontal direction, affecting the uniformity of gas diffusion, and causing uneven film thickness on the wafer surface.

[0005] To achieve the above-mentioned purpose, according to one aspect of the present invention, a process chamber is provided, which is applied to semiconductor process equipment. The process chamber includes a chamber body, an air intake structure and an exhaust structure. A wafer transfer port and an air intake port opposite to the wafer transfer port are provided on the side wall of the chamber body; the air intake structure includes an air intake hole, a first air chamber and a second air chamber. The air intake hole is used to introduce reaction gas. The air intake hole is connected with the first air chamber. The first air chamber is connected with the second air chamber through a plurality of first uniform air holes. The second air chamber is connected with the air intake port through a plurality of second uniform air holes. The axes of the first uniform air holes and the second uniform air holes are respectively parallel to the wafers in the chamber body; the exhaust structure has an exhaust channel, and the exhaust channel is connected with the wafer transfer port.

[0006] Optionally, the air intake structure includes a cover plate and an air intake block, the cover plate includes a cover plate body and a first air equalizing plate, the cover plate body has an air intake opening, the first air equalizing plate is provided with a plurality of first air equalizing holes, the cover plate body and the first air equalizing plate are combined to form a first air chamber, and the first air chamber is connected to the air intake opening; the air intake block has an air intake block body and a second air equalizing plate, the air intake block body has an air intake hole and a mounting opening, the second air equalizing plate is provided with a plurality of second air equalizing holes, the second air equalizing plate and the air intake block body are combined to form a second air chamber, wherein the cover plate is inserted into the mounting opening, and the first air equalizing plate is located between the first air chamber and the second air chamber.

[0007] Optionally, the cover plate further includes a limiting flange, and the limiting flange is used to abut against the outside of the air intake block body.

[0008] Optionally, the length of the air inlet is greater than the diameter of the wafer.

[0009] Optionally, a plurality of first air-uniform holes are evenly distributed on the first air-uniform plate, and a plurality of second air-uniform holes are evenly distributed on the second air-uniform plate.

[0010] Optionally, the plurality of first air-uniform holes and the plurality of second air-uniform holes are distributed alternately with each other.

[0011] Optionally, the number of the first air-uniform holes is less than the number of the second air-uniform holes.

[0012] Optionally, the diameter of the first air-uniform hole is greater than the diameter of the second air-uniform hole.

[0013] Optionally, there are multiple air inlet holes.

[0014] According to another aspect of the present invention, there is provided a semiconductor process equipment, comprising the process chamber described in any one of the above embodiments.

[0015] Compared with the prior art, the process chamber and semiconductor process equipment provided by the present invention have the following beneficial effects: (1) The film transfer port and the air inlet are arranged on the side wall of the chamber body opposite to each other, so that the air inlet and the film transfer port are located on different sides of the chamber body respectively, and the air inlet structure and the exhaust structure are arranged at the air inlet and the film transfer port respectively, and the air inlet hole, the first air chamber and the second air chamber are arranged on the air inlet structure, and the first air chamber and the second air chamber are connected through the first uniform air hole, and the second air chamber and the interior of the chamber body are connected through the second uniform air hole, so that the reaction gas entering the first air chamber through the air inlet hole is diffused and distributed, and then uniformly gasified through the first uniform air hole and then enters the second air chamber horizontally, and then further diffused and uniformly gasified through the second air chamber and the second uniform air hole and then enters the process chamber horizontally, so that the reaction gas can be horizontally inlet in the first air chamber connected to the air inlet hole, and then uniformly flow into the process chamber layer by layer, thereby improving the uniformity of the air flow field in the process area of ​​the process chamber and the uniformity of the process, thereby improving the process quality; (2) By arranging the film transmission port and the air inlet on the side wall of the chamber body opposite to each other, and arranging the air inlet structure and the exhaust structure at the air inlet and the film transmission port respectively, the reaction gas flows into the film transmission port through the air inlet through the chamber body, and then is discharged from the chamber body through the exhaust structure, thereby preventing air from entering the chamber body through the film transmission port. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0017] Figure 1 A schematic diagram of a simulation of airflow in a process chamber of a rapid thermal processing process device in the prior art; Figure 2 A schematic cross-sectional view of a process chamber provided by an embodiment of the present invention; Figure 3 A schematic diagram of air flow simulation in a process chamber provided by an embodiment of the present invention; Figure 4 An exploded schematic diagram of an air intake structure provided by an embodiment of the present invention; Figure 5 A schematic cross-sectional view of a position of an air intake structure provided by an embodiment of the present invention; Figure 6 A cross-sectional schematic diagram of another position of the air intake structure provided by an embodiment of the present invention; Figure 7 A schematic structural diagram of an angle of a cover plate provided by an embodiment of the present invention; Figure 8 A schematic structural diagram of a cover plate provided by an embodiment of the present invention from another angle; Fig. 9 A schematic diagram of an air intake block provided at an angle according to an embodiment of the present invention; Fig.10 A schematic diagram of an air intake block from another angle provided by an embodiment of the present invention; Fig.11 A schematic diagram of an air intake block provided in an embodiment of the present invention from another angle.

[0018] The reference numerals in the above drawings are as follows: 10. Chamber body; 101. Film transmission port; 102. Air inlet; 20. air intake structure; 201. air intake hole; 202. first air chamber; 203. second air chamber; 204. first air uniforming hole; 205. second air uniforming hole; 21. Cover plate; 211, cover plate body; 2111, air inlet opening; 212, first uniform air plate; 213, limiting flange; 22. Intake block; 221, air intake block body; 2211, installation opening; 222, second uniform air plate; 30. Exhaust structure; 301. Exhaust channel; 31, gas plug; 311, first channel; 312, second channel; 32. Exhaust pipe; 40. Wafer. DETAILED DESCRIPTION

[0019] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0020] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0021] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0022] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0023] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] Please refer to Figure 2 As shown, in an embodiment of the present invention, a process chamber is provided, which is applied to semiconductor process equipment. The process chamber includes a chamber body 10, an air intake structure 20 and an exhaust structure 30. A film transfer port 101 and an air intake port 102 opposite to the film transfer port 101 are provided on the side wall of the chamber body 10; the air intake structure 20 includes an air intake hole 201, a first air chamber 202 and a second air chamber 203. The air intake hole 201 is used to introduce reaction gas. The air intake hole 201 is connected to the first air chamber 202. The first air chamber 202 is connected to the second air chamber 203 through a plurality of first uniform air holes 204. The air chamber 203 is connected, and the second air chamber 203 is connected to the air inlet 102 through a plurality of second air holes 205. The axes of the first air hole 204 and the second air hole 205 are respectively parallel to the wafer 40 in the chamber body 10. The first air hole 204 and the second air hole 205 are circular, rectangular or polygonal through holes. The shapes of the first air hole 204 and the second air hole 205 can be designed according to actual conditions, or can be conveniently processed; the exhaust structure 30 has an exhaust channel 301, and the exhaust channel 301 is connected to the wafer transfer port 101. Figure 2As shown, in this embodiment, the chamber body 10 encloses an operating space for processing the wafer 40, and the wafer 40 to be processed is placed at the processing position in the operating space. The chamber body 10 is generally a cylinder, but it can also be other shapes, such as a rectangular parallelepiped. The wafer transfer port 101 is arranged on the side wall of the chamber body 10, and the wafer transfer port 101 is connected to the operating space of the chamber body 10, and the wafer 40 can be transferred into or out of the operating space through the wafer transfer port 101; the air inlet 102 is arranged on the side wall of the chamber body 10, and the air inlet 102 is connected to the operating space, and the reaction gas is transported to the operating space through the air inlet 102; the air inlet hole 201 is arranged below the air inlet structure 20 and is connected to the first air chamber 202, the air inlet hole 201 is connected to the gas source through an external connecting pipe, and the reaction gas is provided to the first air chamber 202. Of course, the air inlet hole 201 can also be arranged above the air inlet structure 20 or at other positions, and there is no limitation here; a plurality of first uniform air holes 204 are arranged between the first air chamber 202 and the second air chamber 203, and a plurality of first uniform air holes 204 are arranged between the second air chamber 203 and the air inlet 102 A plurality of second uniform air holes 205 are provided. Since the axes of the first uniform air holes 204 and the second uniform air holes 205 are respectively parallel to the wafer 40 in the chamber body 10, the airflow entering through the first uniform air holes 204 and the second uniform air holes 205 can enter the chamber body 10 horizontally. The first air chamber 202 and the second air chamber 203 are connected with the interior of the chamber body 10 in sequence, wherein the reaction gas vertically enters the first air chamber 202 through the air inlet 201, and the first air chamber 202 can convert the vertical airflow into a horizontal direction. The plurality of first uniform air holes 204 can evenly transport the airflow to the second air chamber 203. The airflow entering the second air chamber 203 is diffusely distributed and then uniformly distributed again through the second uniform air holes 205 to enter the process chamber, and then enters the exhaust channel 301 of the exhaust structure 30 through the wafer transfer port 101 to exit the process chamber. In the present embodiment, the exhaust structure 30 includes a gas plug 31 and an exhaust pipe 32 having an exhaust channel 301 therein. The exhaust pipe 32 is fixedly mounted on the gas plug 31. The gas plug 31 has a first channel 311 and a second channel 312 that are interconnected, wherein the first channel 311 is connected to the wafer transfer port 101, and the second channel 312 is connected to the exhaust channel 301. When the wafer 40 is transferred, the external air will enter the chamber body 10 along with the wafer 40 through the first channel 311 and the wafer transfer port 101 in sequence. At this time, the reaction gas enters the chamber body 10 through the air inlet 102 through the air inlet structure 20. Since the positions of the wafer transfer port 101 and the air inlet 102 are relative, the reaction gas and the air collide, thereby inhibiting the air from entering the process chamber, and being able to transfer the gas out of the process chamber through the second channel 312 and the exhaust channel 301 in sequence. Therefore, after the transfer is completed, the air cleaning time can be reduced, and the process stage can be directly entered, thereby improving the production capacity of the wafer 40. Figure 3It can be seen that in this embodiment, when the airflow changes from the vertical direction to the horizontal direction, the gas will flow more evenly along the horizontal direction on the surface of the wafer, and will be evenly discharged by the exhaust structure 30, avoiding airflow turbulence caused by unnecessary eddy currents, thereby ensuring the uniformity of the film thickness, which has a significant effect on improving the overall process quality.

[0025] By applying the above technical solution of the present invention, the film transmission port 101 and the air inlet 102 are relatively arranged on the side wall of the chamber body 10, so that the air inlet 102 and the film transmission port 101 are respectively located on different sides of the chamber body 10, and the air inlet structure 20 and the exhaust structure 30 are respectively arranged at the air inlet 102 and the film transmission port 101, and the air inlet hole 201, the first air chamber 202 and the second air chamber 203 are arranged in the air inlet structure 20, and the first air chamber 202 and the second air chamber 203 are connected through the first uniform air hole 204, and the second air chamber 203 and the interior of the chamber body 10 are connected through the second uniform air hole 205, so that the reaction gas vertically entering the first air chamber 202 through the air inlet hole 201 is diffused and distributed, and then uniformly gasified through the first uniform air hole 204, and then horizontally enters the second air chamber 203, and then further diffused through the second air chamber 203 and the second uniform air hole 205. After being distributed and evenly distributed, the gas enters the process chamber horizontally, so that the reaction gas can be horizontally inlet in the first air chamber 202 connected to the air inlet 201, and then enters the process chamber layer by layer for even flow, avoiding the poor effect of even flow first and then changing the direction of the airflow entering the chamber, thereby improving the uniformity of the airflow field in the process area of ​​the process chamber and the uniformity of the process, thereby improving the process quality; by arranging the film transfer port 101 and the air inlet 102 on the side wall of the chamber body 10 relatively, and arranging the air inlet structure 20 and the exhaust structure 30 at the air inlet 102 and the film transfer port 101 respectively, the reaction gas flows into the film transfer port 101 through the chamber body 10 through the air inlet 102, and then is discharged from the chamber body 10 through the exhaust structure 30, thereby preventing air from entering the chamber body 10 through the film transfer port 101, thereby improving the production capacity of the wafer 40.

[0026] See also Figures 4 to 11As shown, in some embodiments, the air intake structure 20 includes a cover plate 21 and an air intake block 22, the cover plate 21 includes a cover plate body 211 and a first air uniforming plate 212, the cover plate body 211 has an air intake opening 2111, and the first air uniforming plate 212 is provided with a plurality of first air uniforming holes 204, the cover plate body 211 and the first air uniforming plate 212 are enclosed to form a first air chamber 202, and the first air chamber 202 is connected to the air intake opening 2111; the air intake block 22 has an air intake block body 221 and a second air uniforming plate 222, the air intake block body 221 has an air intake hole 201 and an installation opening 2211, the second air uniforming plate 222 is provided with a plurality of second air uniforming holes 205, the second air uniforming plate 222 and the air intake block body 221 are enclosed to form a second air chamber 203, wherein the cover plate 21 is inserted into the installation opening 2211, and the first air uniforming plate 212 is located between the first air chamber 202 and the second air chamber 203. Specifically, as shown in the figure, the cover body 211 is a columnar body, wherein the cover body 211 has a cavity inside, which is a cylinder. The cavity is the first air chamber 202, which is used to buffer and evenly distribute the gas entering the first air chamber 202. The first air chamber 202 can also be a rectangular structure or other shapes; the top of the first air chamber 202 is a closed structure, and the bottom has an opening, which is an air inlet opening 2111, which is used to communicate with the air inlet hole 201, so that the gas entering the air inlet hole 201 is delivered into the first air chamber 202 through the air inlet opening 2111; a first air evenly distributing plate 212 is provided on one side of the first air chamber 202, and the other side opposite to it is a closed structure. The air intake block body 221 is a rectangular block with a cavity inside, which is the second air chamber 203. The bottom of the second air chamber 203 is provided with an air intake hole 201 connected to the air intake opening 2111. The air intake hole 201 is a through hole. The top of the second air chamber 203 is a closed structure. A second air leveling plate 222 is provided on one side of the second air chamber 203, and the other side has a mounting opening 2211 matching the cover body 211. The cover body 211 can be inserted into the mounting opening 2211, and the first air leveling plate 212 and the second air leveling plate 222 are arranged at intervals. The cover 21 and the air intake block 22 are detachably connected, which is convenient for maintenance and replacement of the cover 21 and the air intake block 22.

[0027] In some embodiments, the cover body 211 and the first air homogenizing plate 212 may be an integral structure or a split structure, which facilitates replacement and maintenance of the cover body 211 and the first air homogenizing plate 212. Similarly, the air intake block body 221 and the second air homogenizing plate 222 may be an integral structure or a split structure.

[0028] See also Figure 7As shown, in some embodiments, the cover plate 21 further includes a limiting flange 213, and the limiting flange 213 is used to abut against the outside of the air intake block body 221. Specifically, the limiting flange 213 is provided on the cover plate body 211 and is located on a side opposite to the first air homogenizing plate 212; the side of the cover plate body 211 having the first air homogenizing plate 212 is inserted into the installation opening 2211, and when installed in place, the limiting flange 213 abuts against the outside of the air intake block body 221, and at this time, the first air chamber 202 and the second air chamber 203 are respectively isolated from the external environment.

[0029] See also Figure 3 As shown, in some embodiments, the length of the gas inlet 102 is greater than the diameter of the wafer 40. This configuration allows the gas entering through the gas inlet 102 to cover the wafer 40, thereby improving the uniformity of the film coating on the wafer 40.

[0030] See also Figure 8 As shown, in some embodiments, a plurality of first air-leveling holes 204 are evenly distributed on the first air-leveling plate 212, and a plurality of second air-leveling holes 205 are evenly distributed on the second air-leveling plate 222. As described above, the airflow through the first air-leveling holes 204 and the second air-leveling holes 205 is more evenly distributed.

[0031] See also Figure 6 As shown, in some embodiments, a plurality of first air-uniform holes 204 and a plurality of second air-uniform holes 205 are staggered and distributed. As described above, the airflow can be fully diffused, and the uniformity of the airflow distribution in the chamber can be improved.

[0032] See also Figure 8 and Fig.11 As shown, in some embodiments, the number of the first air-uniform holes 204 is less than the number of the second air-uniform holes 205. With the above arrangement, the airflow can be adjusted layer by layer, thereby improving the uniformity of the airflow distribution in the chamber.

[0033] See also Figure 8 and Fig.11 As shown, in some embodiments, the diameter of the first gas uniformity hole 204 is greater than the diameter of the second gas uniformity hole 205 , thereby ensuring uniform diffusion of the gas and improving the uniformity of the film coating on the wafer 40 .

[0034] See also Fig. 9 and Fig.10 As shown, in some embodiments, there are multiple air inlet holes 201. For example, in this embodiment, there are three air inlet holes 201. By using multiple air inlet holes 201 to simultaneously inlet gas, the uniformity of the reaction gas inlet can be ensured and the process effect can be improved. Preferably, the multiple air inlet holes 201 are evenly arranged along the length direction of the air inlet block body 221.

[0035] The present invention further provides a semiconductor process equipment, comprising the process chamber described in any of the above embodiments. It is understandable that the beneficial effects of the above semiconductor process equipment can be found in the relevant description of the above process chamber, which will not be repeated here.

[0036] In summary, the process chamber and semiconductor process equipment provided by this embodiment have at least the following beneficial technical effects: (1) The first air chamber 202 and the second air chamber 203 are connected through the first air hole 204, and the second air chamber 203 and the interior of the chamber body 10 are connected through the second air hole 205, so that the reaction gas vertically entering the first air chamber 202 through the air inlet 201 is dispersed and distributed, and then uniformly distributed through the first air hole 204 and then horizontally enters the second air chamber 203, and then further dispersed and uniformly distributed through the second air chamber 203 and the second air hole 205 and then horizontally enters the process chamber, so that the reaction gas can be horizontally inlet in the first air chamber 202 connected to the air inlet 201, and then uniformly flows into the process chamber layer by layer, avoiding the poor effect of uniformly flowing first and then changing the direction of the airflow entering the chamber, thereby improving the uniformity of the airflow field in the process area of ​​the process chamber and the uniformity of the process, thereby improving the process quality; (2) By arranging the wafer transfer port 101 and the air inlet 102 on the side wall of the chamber body 10 opposite to each other, and arranging the air inlet structure 20 and the exhaust structure 30 at the air inlet 102 and the wafer transfer port 101 respectively, the reaction gas flows into the wafer transfer port 101 through the chamber body 10 through the air inlet 102, and then is discharged from the chamber body 10 through the exhaust structure 30, thereby preventing air from entering the chamber body 10 through the wafer transfer port 101, thereby improving the production capacity of the wafer 40.

[0037] The above are only preferred embodiments of the present invention, and only specifically describe the technical principles of the present invention. These descriptions are only for explaining the principles of the present invention and cannot be interpreted as limiting the scope of protection of the present invention in any way. Based on the explanations here, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention, and other specific implementations of the present invention that can be associated with by technicians in this field without creative labor, should be included in the scope of protection of the present invention.

Claims

1. A process chamber, characterized in that: Applied to semiconductor process equipment, the process chamber comprises a chamber body, an air intake structure and an exhaust structure, and a film transfer port and an air intake port opposite to the film transfer port are provided on the side wall of the chamber body; The air intake structure includes an air intake hole, a first air chamber, and a second air chamber. The air intake hole is used to introduce reaction gas. The air intake hole is connected to the first air chamber. The first air chamber is connected to the second air chamber through a plurality of first uniform air holes. The second air chamber is connected to the air intake through a plurality of second uniform air holes. The axes of the first uniform air holes and the second uniform air holes are respectively parallel to the wafer in the chamber body. The exhaust structure has an exhaust channel, and the exhaust channel is communicated with the film transmission port.

2. The process chamber according to claim 1, characterized in that: The air intake structure comprises a cover plate and an air intake block, the cover plate comprises a cover plate body and a first air equalizing plate, the cover plate body has an air intake opening, the first air equalizing plate is provided with a plurality of the first air equalizing holes, the cover plate body and the first air equalizing plate are enclosed to form the first air chamber, and the first air chamber is communicated with the air intake opening; The air intake block comprises an air intake block body and a second air equalizing plate, wherein the air intake block body comprises the air intake hole and the mounting opening, and the second air equalizing plate is provided with a plurality of the second air equalizing holes, and the second air equalizing plate and the air intake block body are combined to form the second air chamber, wherein the cover plate is inserted into the mounting opening, and the first air equalizing plate is located between the first air chamber and the second air chamber.

3. The process chamber according to claim 2, characterized in that: The cover plate further includes a limiting flange, and the limiting flange is used to abut against the outside of the air intake block body.

4. The process chamber according to claim 1, characterized in that: The length of the air inlet is greater than the diameter of the wafer.

5. The process chamber according to claim 2, characterized in that: The plurality of first air-uniform holes are evenly distributed on the first air-uniform plate, and the plurality of second air-uniform holes are evenly distributed on the second air-uniform plate.

6. The process chamber according to claim 1, characterized in that: The plurality of first air-uniform holes and the plurality of second air-uniform holes are distributed alternately with each other.

7. The process chamber according to claim 1, characterized in that: The number of the first air-uniform holes is less than the number of the second air-uniform holes.

8. The process chamber according to claim 1, characterized in that: The diameter of the first air-uniform hole is greater than the diameter of the second air-uniform hole.

9. The process chamber according to claim 1, characterized in that: The number of the air inlet holes is multiple.

10. A semiconductor process equipment, characterized in that: A process chamber comprising any one of claims 1 to 9.

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