Clip
By designing a pore structure with high pore density in the clip of semiconductor devices, the problem of internal stress accumulation caused by temperature fluctuations is solved, the adhesion between the clip and the die and the flexibility of the clip are improved, and the risk of layering is reduced.
Patent Information
- Application Number
- CN202411304768.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-22
- Filing Date
- 2024-09-19
- Publication Date
- 2025-03-25
AI Technical Summary
The thermal expansion and contraction of the clips in existing semiconductor components due to temperature fluctuations lead to accumulation of internal stress, which in turn may lead to delamination of the clip components.
A clip for semiconductor devices is designed with a plurality of holes with a hole density of at least 4 holes/mm2, and the solder entering through these holes increases adhesion between the clip and the die, and the presence of the holes increases the flexibility of the clip to absorb internal stress.
The adhesion between the clip and the die is improved, the internal stress of the solder is reduced, the possibility of layering of the clip components is reduced, and the overall stability of the semiconductor device is improved.
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Figure CN119695018A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a clip for a semiconductor device, and a semiconductor device comprising the clip. Background Art
[0002] Semiconductor components, such as transistors, are manufactured as layered components, including components such as a die pad, a die, a clip, and a housing. The housing provides a protective function and at least partially surrounds the die and other components that form part of the semiconductor component.
[0003] Semiconductor assemblies are subject to temperature fluctuations in use. These temperature fluctuations cause expansion and contraction of the components of the clip. The coefficient of thermal expansion of each component is different, and therefore the amount by which each component expands and contracts due to temperature changes is also different. This causes internal stresses to accumulate within the components of the clip. Internal stresses are undesirable because they can lead to delamination of the components of the clip. There are other causes of delamination of the components of the clip.
[0004] There is a need to overcome the disadvantages associated with existing semiconductor components and clips for semiconductor components, whether mentioned in this document or in other documents. Summary of the invention
[0005] In a first aspect of the present invention, a clip for a semiconductor device is provided. The clip has a plurality of holes. The plurality of holes define at least 4 holes / mm 2 The hole density.
[0006] The hole density can be at least 25 holes / mm 2 The hole density can be up to 50 holes / mm 2 or 100 holes / mm 2 The hole density may be selected based on, for example, the intended application of the semiconductor device.
[0007] The hole density is understood to mean the number of holes present in the clip per unit area.
[0008] The clip may otherwise be referred to as a connector.The purpose of the clip is to electrically couple components of the semiconductor device and to serve as a thermal path to dissipate device heat.
[0009] The hole may be a through hole.
[0010] When assembled into a semiconductor device, the clip is fixed to the die of the semiconductor device using, for example, solder. Since the clip has at least 4 holes / mm defined 2The plurality of holes with a hole density of 100%, thereby improving the adhesion between the clip and the tube core. This is because the solder enters the holes of the clip, thereby providing a larger contact area and a larger solder volume between the solder and the clip. In addition, the thickness of the solder (referred to as the bond line thickness) will increase compared to a clip that does not include a plurality of holes. This further improves the strength of the adhesion between the clip and the tube core. In addition, any excess solder enters the holes, which allows the holes to act as a reservoir for the solder. This allows for better control of the thickness of the solder layer, thereby reducing the possibility of separation of components of the semiconductor device. In addition, the solder reservoir helps to absorb the stress experienced by the device during use. This reduces the stress experienced by any filler solder (as solder extending around the outer sidewalls of the clip) during use, thereby reducing the possibility of cracking of the filler solder.
[0011] The semiconductor device includes an isolator covering and adhering to the clip. The plurality of holes also improves the adhesion between the clip and the isolator because the isolator enters the holes, providing a larger contact area between the isolator and the clip.
[0012] In use, semiconductor devices are subject to temperature fluctuations and in some applications may experience temperatures exceeding 200°C or more. For example, semiconductors may experience temperatures as low as -65°C (or lower) and as high as 150°C (or higher). These fluctuations result in changes in the size of components of the device due to thermal expansion. The clip is typically made of a different material than the die to which it is secured and the solder used to secure the clip to the die. For example, the clip may be made of copper, while the die may be made of silicone and the solder made of a lead alloy. Each of these materials has a different coefficient of thermal expansion and therefore each of the components expands and contracts at a different rate as the temperature changes. This causes internal stresses to build up within the components. At least 4 holes / mm 2 The multiple holes provided by the hole density optimize the flexibility of the clip, which allows the clip to absorb the internal stress it is subjected to, reducing the possibility of delamination of the component. In addition, as discussed above, since the thickness of the solder joint line is increased, more solder is provided, which reduces the internal stress experienced by the solder. This also reduces the possibility of delamination of the component.
[0013] Each hole in the plurality of holes may have a length of at least 50 μm. Each hole in the plurality of holes may have a length of at most 500 μm.
[0014] The length of each of the holes may be understood to mean the maximum dimension of the corresponding hole in a direction perpendicular to the central axis of the corresponding hole.
[0015] Within the specified ranges, the adhesion between the clip and the die and between the clip and the spacer can be optimized for a given application.
[0016] The holes may be circular, triangular and / or rectangular in cross-section.
[0017] The cross-sections of the plurality of holes may all be circular. The cross-sections of the plurality of holes may all be triangular. The cross-sections of the plurality of holes may all be rectangular. The cross-sections of at least some of the plurality of holes may be circular, the cross-sections of at least some of the plurality of holes may be triangular, and the cross-sections of at least some of the plurality of holes may be rectangular. The cross-sectional shape of the plurality of holes may be as viewed from the top of the device. The plane of the cross-section may extend normal to the central axis of the associated hole.
[0018] The shape of the apertures may be selected based on the application of the device, and each shape may be particularly advantageous for a given application.
[0019] The holes may be arranged in a matrix.
[0020] The holes being arranged in a matrix may be understood to mean that the spacing between the holes is generally uniform. The spacing may be uniform in two directions.
[0021] Where the holes are arranged in a matrix, the adhesion between the clip and the die and between the clip and the spacer in use is advantageously more uniform. This is compared to the case where the holes have a non-uniform distribution. Uniform adhesion advantageously reduces the likelihood of delamination of components of the semiconductor device.
[0022] One or more areas of the clip having a plurality of holes may have a porosity of up to 30%.
[0023] The clip may include a first portion for attaching to a die of a semiconductor device. The clip may include a second portion for attaching to a lead portion of a lead frame of the semiconductor device. The clip may include a transition portion connecting the first portion and the second portion. A plurality of holes may be provided to the first portion and the second portion.
[0024] The first portion and the second portion may be non-coplanar. A plurality of holes may be provided only to the first portion and the second portion. A plurality of holes may be provided to the entire clip. The second portion may be used to attach directly to a plurality of leads. The clip may include a plurality of leads. The plurality of leads may extend from the clip in a continuous manner. The plurality of leads may be integrally formed with the clip.
[0025] In a second aspect of the present invention, a semiconductor device is provided. The semiconductor device comprises a lead frame, a semiconductor die mounted on the lead frame, and the clip according to the first aspect of the present invention. A portion of the clip is fixed to the semiconductor die.
[0026] The advantages discussed above in relation to the first aspect of the invention apply mutatis mutandis to the second aspect of the invention.
[0027] The clip may define a first portion that is attached to the semiconductor die.A plurality of holes may be provided to the first portion of the clip.
[0028] The plurality of holes may be provided only to the first portion of the clip.
[0029] The first portion may include at least one micro-depression.At least some of the plurality of holes may be provided in the region of the at least one micro-depression.
[0030] Holes may be provided only in the region of the micro-recesses.
[0031] The clip is typically secured to the semiconductor die using solder, but may also be secured to the semiconductor die using an adhesive. In the absence of multiple holes, the solder or adhesive securing the clip to the semiconductor die is thinnest in the area of the micro-depression. This creates a weak point in the bond between the clip and the semiconductor die, increasing the likelihood of cracking of the solder. In the case of multiple holes in the area of at least one micro-depression, the amount of solder or adhesive provided is increased compared to the case where there are no holes in the area. Increasing the amount of solder or adhesive in the area of at least one micro-depression advantageously reduces the likelihood of solder cracking.
[0032] The lead frame may include a die attach portion and a lead portion. The die may be mounted on the die attach portion. The second portion of the clip may be fixed to the lead portion of the lead frame.
[0033] The clip may include a plurality of leads. The plurality of leads may form part of or extend from the second portion of the clip. The plurality of leads may extend through the cover. The plurality of leads may allow the device to be connected to an external circuit. The plurality of leads may extend from the clip in a continuous manner. The plurality of leads may be integrally formed with the clip.
[0034] The semiconductor device may further include a cover. At least a portion of the cover may extend into at least one hole of the plurality of holes.
[0035] Where the cover extends into at least one of the plurality of holes, the adhesion between the clip and the cover is advantageously improved. This is because the contact area between the cover and the clip is increased. This is desirable because improving the adhesion between the clip and the cover reduces the likelihood of the cover separating from the clip.
[0036] The semiconductor device may further include a solder layer securing the clip to the semiconductor die.At least a portion of the solder layer may extend into at least one of the plurality of holes.
[0037] Where the solder layer extends into at least one of the plurality of holes, the adhesion between the solder layer and the cover is advantageously improved. This is because the contact area between the solder layer and the clip is increased. This is desirable because improving the adhesion between the clip and the solder layer reduces the likelihood of the clip separating from the solder layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0038] Embodiments of the present invention will now be described with reference to the accompanying drawings, in which:
[0039] Figure 1 shows a perspective view of a semiconductor device;
[0040] Figure 2 Shows Figure 1 A perspective view of a clip of a semiconductor device;
[0041] Figure 3 Shows Figure 1 A cross-sectional view of a semiconductor device;
[0042] Figure 4 Shows Figure 1 A cross-sectional view of a semiconductor device;
[0043] Figure 5 Shows Figure 2 An alternative embodiment of the clip; and
[0044] Figures 6a to 6d Shows Figure 2 An alternative embodiment of the clip. DETAILED DESCRIPTION
[0045] Figure 1 A semiconductor device 2 is shown. The semiconductor device 2 comprises a lead frame 4. The lead frame 4 may also be referred to as a die pad. The semiconductor device 2 comprises a die 6. The semiconductor device 2 comprises a clip 8.
[0046] The lead frame 4 serves as a base for the semiconductor device 2, to which other components of the device are attached. The lead frame 4 includes a die attach portion 3. A die 6 is fixed to the die attach portion 3. The lead frame 4 includes a lead portion 5. In the depicted embodiment, the lead portion 5 includes two separately formed portions. However, in some non-depicted embodiments, the lead portion 5 may include only a single portion. The lead portion 5 includes a plurality of leads 7 ( Figure 1 5 ). Each of the plurality of leads extends from a corresponding portion of the lead portion 5. The plurality of leads 7 allow the semiconductor device 2 to be connected to an external circuit (not shown). The lead frame 4 is made of a conductive material such as copper (including a copper alloy). The lead portion 5 is formed separately from the die attach portion 3. However, in some embodiments, the lead portion 5 and the die attach portion 3 may be formed integrally.
[0047] The tube core 6 is fixed to the lead frame 4. The tube core 6 is fixed to the lead frame 4 by means of a first solder layer 10. Specifically, the tube core 6 is fixed to the tube core attachment part 3 of the lead frame 4 by the first solder layer 10. The tube core 6 can be a single component, or can include a plurality of component parts. The tube core 6 is made of a semiconductor material. The tube core 6 has a functional circuit manufactured thereon. The tube core 6 is generally rectangular, but can be any other suitable shape. The tube core 6 is in the shape of a plate.
[0048] The clip 8 includes a first portion 9, a second portion 13 and a transition portion 15. The transition portion 15 is connected and disposed between the first portion 9 and the second portion 13. The first portion 9 and the second portion 13 are non-coplanar. The clip 8 is fixed to the tube core 6. The clip 8 is fixed to the tube core 6 by means of the second solder layer 12. Specifically, the first portion 9 of the clip 8 is fixed to the tube core 6 by means of the second solder layer 12. The clip 8 is fixed to the lead portion 5 of the lead frame 4. The clip 8 is fixed to the lead portion 5 of the lead frame 4 by means of the third solder layer 11. Specifically, the second portion 13 of the clip 8 is fixed to the lead portion 5 of the lead frame 4 by means of the third solder layer 11. Therefore, the clip 8 electrically connects the tube core 6 and the lead portion 5 of the lead frame 4. The clip 8 may be additionally referred to as a connector. In some embodiments, the lead portion 5 may extend continuously from the clip 8. In the case where the lead portion 5 extends continuously from the clip 8, the lead portion 5 may be formed integrally with the clip 8. That is, the lead portion 5 and the lead 7 may form a part of the clip 8 .
[0049] The semiconductor device 2 further includes a cover (for clarity, Figure 1 The cover may also be referred to as an insulator, housing, or encapsulation material. The cover encapsulates the remaining components of the semiconductor device 2 (i.e., the lead frame 4, the die 6, and the clip 8). The leads 7 of the clip 8 extend through the cover. This allows the leads 7 to be connected to an external circuit (not shown). The cover may be made of any suitable electrically insulating material, such as epoxy resin.
[0050] Figure 2 A perspective view of the clip 8 is shown. The first portion 9 of the clip 8 comprises a first major surface 20. The first portion 9 of the clip 8 comprises a second major surface (at Figure 2 The second major surface is generally opposite the first major surface 20. The first portion 9 of the clip 8 defines a first plurality of apertures 22 ( Figure 2Only one of them is marked in the figure). A first plurality of holes 22 extends through the first part 9 of the clip 8. The first plurality of holes 22 extends from the first main surface 20 of the first part 9 of the clip 8 to the second main surface of the first part 9 of the clip 8. The first plurality of holes 22 can be called through holes. The first plurality of holes 22 defines a hole density. The hole density can be understood to mean the number of holes present per unit area. The relevant area is the area of the first main surface 20 and the area of one or more areas of the first part 9 to which the holes 22 are provided (including the area occupied by the holes). The hole density is at least 4 holes / mm 2 This hole density advantageously improves adhesion between the clip 8 and the die 6 and between the clip 8 and the cover, as will be discussed in more detail below. In some embodiments, the hole density may be at least 25 holes / mm 2 In some embodiments, the hole density can be up to 50 holes / mm 2 or 100 holes / mm 2 The hole density may be selected based on, for example, the intended application of the semiconductor device. The first plurality of holes 22 may result in a porosity of up to 30% in one or more regions of the first portion 9. The porosity is a function of the hole density and the size of the holes of the first plurality of holes 22. The porosity of the first portion 9 of the clip 8 may be selected based on the desired flexibility of the first portion 9 of the clip 8 and the desired flexibility of the clip 8 as a whole.
[0051] The second portion 13 of the clip 8 includes a first arm 17 and a second arm 19. However, in some embodiments, the second portion 13 may include only a single arm. The second portion 13 of the clip 8 includes a first major surface 24. The second portion 13 of the clip 8 includes a second major surface (at Figure 2 The second major surface is generally opposite the first major surface 24. The first major surface 24 and the second major surface each include a portion forming a portion of the first arm 17 and a portion forming a portion of the second arm 19.
[0052] The second portion 13 of the clip 8 defines a second plurality of apertures 26 ( Figure 2 Only one of them is marked in the figure). A second plurality of holes 26 extends through the second portion 13 of the clip 8. The second plurality of holes 26 extends from the first main surface 24 of the second portion 13 of the clip 8 to the second main surface of the second portion 13 of the clip 8. The second plurality of holes 26 extend through the distal portion of the first arm 17 and the distal portion of the second arm 19. The second plurality of holes 26 can be referred to as through holes. The second plurality of holes 26 defines a hole density. The hole density of the second plurality of holes 26 can be equal to the hole density of the first plurality of holes 22. The hole density can be understood to refer to the number of holes present per unit area. The relevant area is the area of one or more regions of the second portion 13 to which the holes 26 are provided (including the area occupied by the holes). The hole density is at least 4 holes / mm2 This hole density advantageously improves the adhesion between the clip 8 and the tube core 6 and between the clip 8 and the cover. In some embodiments, the hole density can be at least 25 holes / mm 2 In some embodiments, the hole density can be up to 50 holes / mm 2 or 100 holes / mm 2 The hole density may be selected based on, for example, the intended application of the semiconductor device. The second plurality of holes 26 may result in a porosity of at least 30% in one or more regions of the second portion 13 to which they are provided. The porosity is a function of the hole density and the size of the holes of the second plurality of holes 26. The porosity of the second portion 13 of the clip 8 may be selected based on the desired flexibility of the second portion 13 of the clip 8 and the desired flexibility of the clip 8 as a whole. In some embodiments, all regions of the clip 8 may have holes.
[0053] The holes 22, 26 are arranged in a matrix. The holes 22, 26 arranged in a matrix can be understood to mean that the spacing between the holes, specifically the spacing between the center points of the holes, is generally uniform. In some undepicted embodiments, the arrangement of the holes in the plurality of holes does not need to be uniform, and can therefore be arranged in any particular pattern. The cross-section of each of the holes 22, 26 is generally circular. However, in other embodiments, the cross-sectional shape of the hole can take any other suitable shape, some of which will be discussed in more detail below. The holes 22, 26 can be formed by laser or by stamping.
[0054] The length of each hole in the plurality of holes may be at least 50 μm and at most 500 μm. The length of a hole refers to the maximum dimension of the respective hole in a direction perpendicular to the central axis of the respective hole (or in a direction parallel to the plane defined by the first major surface 20, 24 of the associated one of the first and second parts 9, 13). The length of the holes 22, 26 may be selected based on the desired flexibility of the clip 8 - larger holes will make the clip 8 more flexible, and smaller holes will make the clip 8 less flexible.
[0055] Figure 3 A cross-sectional view of a semiconductor device 2 is shown. Figure 3 A cross-sectional view of Figure 3It can be seen that at least a portion of the second solder layer 12 extends into the holes of the first plurality of holes 22. This advantageously improves the adhesion between the second solder layer 12 and the clip 8. This is because the contact area between the second solder layer 12 and the clip 8 is increased. Compared with the case where no holes are provided, the adhesion is further improved due to the increase in the bond line thickness and volume of the second solder layer 12. Improving the adhesion between the clip 8 and the first solder layer 12 advantageously reduces the possibility of the clip 8 being separated from the second solder layer 12. Similarly, at least a portion of the cover 18 extends into the holes of the first plurality of holes 22. This improves the adhesion between the clip 8 and the cover 18. Improving the adhesion between the cover 18 and the clip 8 is desirable because it reduces the possibility of the cover being separated from the clip 8. Since the contact area between the cover 8 and the clip 18 is increased and since the volume of the cover 18 is increased, the adhesion between the cover 18 and the clip 8 is improved.
[0056] The die attach portion 3 of the lead frame 4 has a plurality of grooves 32. The plurality of grooves 32 are provided in the region of the die attach portion 3 that is in (direct) contact with the cover 18. Thus, at least a portion of the cover 18 extends into the grooves 32. The cover 18 extending into the grooves 32 advantageously increases the contact area between the cover 18 and the die attach portion 3 of the lead frame 4. Increasing the contact area between the cover 18 and the die attach portion 4 of the lead frame 4 advantageously increases the adhesion between the cover 18 and the die attach portion 3, which reduces the likelihood of the cover being separated from the die attach portion 3. In some embodiments, the grooves 32 need not be provided.
[0057] Figure 4 A cross-sectional view of the semiconductor device 2 is shown. Figure 4 A cross-sectional view of Figure 4 It can be seen that at least a portion of the third solder layer 11 extends into the holes of the second plurality of holes 26. This advantageously improves the adhesion between the third solder layer 11 and the clip 8. This is because the contact area between the third solder layer 11 and the clip 8 is increased. Compared with the case where no hole is provided, the adhesion is further improved due to the increase in the thickness and volume of the bond line of the third solder layer 11. Improving the adhesion between the clip 8 and the third solder layer 11 advantageously reduces the possibility of the clip 8 being separated from the third solder layer 11. Similarly, at least a portion of the cover 18 extends into the holes of the second plurality of holes 26. This improves the adhesion between the clip 8 and the cover 18. Improving the adhesion between the cover 18 and the clip 8 is desirable because it reduces the possibility of the cover being separated from the clip 8. Since the contact area between the cover 8 and the clip 18 is increased and since the volume of the cover 18 is increased, the adhesion between the cover 18 and the clip 8 is improved.
[0058] The lead portion 5 of the lead frame 4 has a plurality of grooves 34. The plurality of grooves 34 are provided in the region of the lead portion 5 that is in (direct) contact with the cover 18. Thus, at least a portion of the cover 18 extends into the grooves 34. The cover 18 extending into the grooves 34 advantageously increases the contact area between the cover 18 and the lead portion 5 of the lead frame 4. Increasing the contact area between the cover 18 and the grooves 34 advantageously increases the adhesion between the cover 18 and the lead portion 5 of the lead frame 4, which reduces the likelihood of the cover separating from the lead portion 5. In some embodiments, the grooves 34 do not need to be provided.
[0059] In use, the semiconductor device 2 is subject to temperature fluctuations. Temperature fluctuations cause expansion and contraction of the size of the components of the semiconductor device. Each component of the semiconductor device 2 has a different coefficient of thermal expansion. This is because each component of the semiconductor device is made of different materials. Since the components of the semiconductor device are fixed to each other, and since each component expands or contracts by different amounts during use, internal stresses are generated due to temperature fluctuations. These internal stresses may, for example, cause failure of the semiconductor device by delamination of the components of the device. The first plurality of holes 22 and the second plurality of holes 26 reduce the possibility of delamination of the components. This is because the holes 22, 26 increase the flexibility of the clip 8 compared to the case where the holes are not provided. Increasing the flexibility of the clip 8 allows the clip 8 to better withstand internal stresses, which reduces the possibility of delamination of the components of the clip 8. The holes also reduce the diffusion of the solder layer that may occur due to the heating performed during the manufacture of the semiconductor device 2.
[0060] Figure 5 Clip 8 with Figure 1 The clamp is similar to the Figure 5 The first portion 9 of the clip 8 includes a micro-depression 28. In the depicted embodiment, the first portion 9 includes only one micro-depression 28. However, in some embodiments, the clip 8 may include multiple micro-depressions. The first portion 9 may include multiple micro-depressions. In the case where the clip 8 includes multiple micro-depressions, each of the first portion 9 and the second portion 13 may include one or more micro-depressions. In the case where the second portion 13 has micro-depressions, one or both of the first arm 17 and the second arm 19 may include a single micro-depression or multiple micro-depressions. The micro-depression 28 is formed by stamping a dimple 30 into the first major surface 20, 24 of the first portion 9 (or the second portion 13 of the clip 8). Stamping the clip 8 to form the dimple 30 results in a protrusion extending from the second major surface of the first portion 9 ( Figure 5The protrusions 22 are not visible in the embodiment - it is obscured by the clip 8 itself). The protrusions are provided at locations corresponding to the corresponding dimples 30. In the depicted embodiment, a plurality of holes 22 are provided in the area of the micro-depressions 28. In some embodiments, a plurality of holes 22 may be provided outside the area of the micro-depressions 28. The micro-depressions 28 and dimples 30 are provided to better secure the clip 8 to the die and the lead portion of the lead frame.
[0061] During assembly, the surface tension of the solder pulls the clip 8 toward the die 6 or the lead portion 5 of the lead frame 4. Providing one or more holes in the area of the micro-recesses 28 advantageously increases the bond line thickness and volume of the solder. This enhances the adhesion between the clip 8 and the die 6. This reduces the likelihood of separation of components of the device 2.
[0062] Figure 6a-6d Some alternative hole shapes are shown. The alternative hole shapes shown are applicable to both the first plurality of holes 22 of the first portion 9 of the clip 8 and the second plurality of holes 26 of the second portion 13 of the clip 8. Figure 6a In the embodiment, the cross-section of the holes 22 and 26 is a square. In some embodiments, the cross-section of the holes may be any quadrilateral shape. Figure 6b In the embodiment, the cross-section of the holes 22 and 26 is a diamond shape. Figure 6c In the embodiment, the cross-section of the holes 22 and 26 is circular. Figure 6d In the embodiment, the holes 22 and 26 include holes with a circular cross section and holes with a square cross section. In some embodiments, the holes 22 and 26 may include a mixture of holes with different cross-sectional shapes disclosed herein.
[0063] Although specific embodiments of the present invention have been described above, it should be understood that the present invention may be practiced in a manner other than that described. The above description is intended to be illustrative rather than restrictive. Therefore, it will be apparent to those skilled in the art that modifications may be made to the described invention without departing from the scope of the claims set forth below.
Claims
1. A clip for a semiconductor device, the clip having a plurality of holes, wherein the plurality of holes define at least 4 holes / mm 2 The hole density. 2 . The clip of claim 1 , wherein each hole of the plurality of holes has a length of at least 50 μm and at most 500 μm.
3. A clip according to claim 1 or claim 2, wherein the cross-section of the hole is circular, triangular and / or rectangular.
4. A clip according to any preceding claim, wherein the apertures are arranged in a matrix.
5. A clip according to any preceding claim, wherein one or more regions of the clip having the plurality of apertures have a porosity of up to 30%.
6. A clip according to any preceding claim, wherein the clip comprises a first portion for attaching to a die of the semiconductor device, a second portion for attaching to a lead portion of a lead frame of the semiconductor device, and a transition portion connecting the first portion and the second portion, wherein the plurality of holes are provided to the first portion and the second portion.
7. A semiconductor device comprising: Lead frame; a semiconductor die mounted on the lead frame; A clip as claimed in any preceding claim, a portion of the clip being secured to the semiconductor die.
8. The clip of claim 7, wherein the clip defines a first portion that is attached to the semiconductor die, and wherein the plurality of holes are provided to the first portion of the clip. 9 . The semiconductor device according to claim 8 , wherein the first portion comprises at least one micro recess, and wherein at least some of the plurality of holes are provided in the region of the at least one micro recess.
10. The semiconductor device according to any one of claims 7 to 9, wherein: The lead frame includes a die attach portion and a lead portion, The die is mounted on the die attach portion, and The second portion of the clip is secured to the lead portion of the lead frame. 11 . The semiconductor device according to claim 7 , further comprising a cover, wherein at least a portion of the cover extends into at least one hole of the plurality of holes.
12. The semiconductor device of any one of claims 7 to 11, further comprising a solder layer securing the clip to the semiconductor die, and wherein at least a portion of the solder layer extends into at least one hole of the plurality of holes.