Energy selective surface with low-frequency cross-band ultra-wideband characteristic

Abstract

The invention discloses an energy selective surface with a low-frequency cross-band ultra-wideband characteristic. The energy selective surface comprises a top-layer metal structure unit, a middle-layer dielectric substrate and a bottom-layer metal structure unit. The top layer metal structure unit is composed of nine cross-shaped patch metal structures and PIN diodes, and the bottom layer metal structure unit is formed by rotating the top layer metal structure unit by 45 degrees. When high-power electromagnetic waves enter the structure, the PIN diode is conducted and is equivalent to a resistor, power protection is achieved within the range of 0-5.6 GHz, and the transmission coefficient is restrained to be below-15 dB; when a low-power electromagnetic wave enters the structure, the PIN diode is disconnected and is equivalent to a capacitor, wave transmission is realized in the range of 0-5.6 GHz, and the transmission coefficient is more than-3dB, so that the functions of low-power wave transmission and high-power protection are realized in the low-frequency range of 0-5.6 GHz, the suppression performance is enhanced, and the antenna housing has an application value for the design of a low-frequency antenna housing.

Description

Technical Field

[0001] The patent of this invention belongs to the technical field of electromagnetic wave energy selective surfaces, and specifically relates to energy selective surfaces with low-frequency, cross-band and ultra-wideband characteristics. Background Art

[0002] Energy Selective Surface (ESS) can automatically adjust its transmission characteristics for electromagnetic waves according to the energy of electromagnetic waves. When the energy of electromagnetic waves is less than the safety threshold, they can pass smoothly, and when they are greater than the safety threshold, they are automatically shielded. By using ESS technology, electromagnetic wave energy can be more effectively protected, thereby protecting the function of electromagnetic materials when facing high-power microwave radiation. This technology not only has great scientific value, but also has broad application prospects.

[0003] As the research on HPM (High Power Microwave) technology is in full swing, its frequency band is getting wider and wider, its power is getting stronger and stronger, and its importance in electronic countermeasures is becoming higher and higher. Correspondingly, the importance of electromagnetic protection technology is becoming more and more known. In recent years, ESS has aroused strong interest among researchers due to its application in HPM protection. ESS is an electromagnetic material that can adaptively adjust its wave transmission and reflection characteristics according to the energy of external electromagnetic signals, and has good electromagnetic compatibility and protection effect. However, so far, there are still some problems in the research of ESS, such as the narrow wave transmission frequency band, insufficient insertion loss IL and shielding effectiveness SE. Summary of the invention

[0004] The purpose of this patent is to provide an energy selective surface with low-frequency cross-band ultra-wideband characteristics. The main problem to be solved is to achieve the characteristics of ESS in low-frequency broadband wave transmission and ultra-wideband suppression.

[0005] In order to achieve the above object, the present invention provides an energy selective surface with low-frequency cross-band ultra-wideband characteristics. The present invention adopts the following technical solutions to solve the above technical problems: The energy selective surface with low-frequency cross-band ultra-wideband characteristics is characterized in that the structure includes from top to bottom: a top metal structure unit, an intermediate dielectric substrate, and a bottom metal structure unit. The top metal structure unit is composed of nine cross-shaped patch metal structures and a PIN diode, and the bottom metal structure unit is formed by rotating the top metal structure unit by 45 degrees.

[0006] The energy selective surface with low-frequency cross-band ultra-wideband characteristics of the present invention is characterized in that the cross metal unit of the top metal structure is 0.3mm wide and 2.4mm long, and the PIN diode is placed at an interval of 0.15mm; the cross metal unit of the bottom metal structure is 0.3mm wide and 1.9mm long, and the PIN diode is placed at an interval of 0.15mm.

[0007] The energy selective surface with low-frequency cross-band ultra-wideband characteristics of the present invention is characterized in that the dielectric substrates are all made of F4B265, with a relative dielectric constant of 2.65 and a loss tangent of 0.001, and the metal structural unit material is selected from metal copper with good conductivity and stable properties.

[0008] The energy selective surface with low-frequency cross-band ultra-wideband characteristics of the present invention is characterized in that the PIN diode used is model MA4P275, and when the diode is disconnected, it is equivalent to a capacitor of 0.04pF, and when the diode is turned on, it is equivalent to a resistor of 5Ω.

[0009] The energy selective surface with low-frequency cross-band ultra-wideband characteristics of the present invention is characterized in that the period is 7.5 mm and the thickness of the dielectric substrate is 1.6 mm.

[0010] Compared with the prior art, the advantages of the present invention are: 1. The ESS has realized the functions of ultra-wideband wave transmission and ultra-wideband protection in the low frequency band. 2. The insertion loss IL and shielding effectiveness SE of the ESS are good. When high-power electromagnetic waves are incident on the structure, the PIN diode is turned on and is equivalent to a resistor, achieving power protection in the range of 0-5.6 GHz, and the shielding effectiveness SE is greater than 15dB; when low-power electromagnetic waves are incident on the structure, the PIN diode is disconnected and is equivalent to a capacitor, achieving wave transmission in the range of 0-5.6 GHz, and the insertion loss IL is less than 3dB. 3. The structure is easy to implement and convenient for physical processing and testing. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A side view of a unit structure of an energy selection surface of the present invention; Figure 2 A schematic diagram of the top unit structure of the energy selective surface of the present invention; Figure 3 A schematic diagram of the underlying unit structure of the energy selective surface of the present invention; Figure 4 The insertion loss IL of the energy selective surface at low power of the present invention; Figure 5 The shielding effectiveness SE at surface high power is selected for the energy of the present invention. DETAILED DESCRIPTION

[0012] In order to more clearly explain the purpose, technical solutions and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0013] like Figure 1 The figure shows a side view of the structure of the present invention. The structure has three layers from top to bottom, including: 1. a top metal structure unit; 2. a dielectric substrate; and 3. a bottom metal structure unit.

[0014] The top metal structure unit consists of nine cross-shaped patch metal structures and PIN diodes, such as Figure 2 The bottom metal structure unit is formed by rotating the top metal structure unit by 45°, as shown in Figure 3 As shown. When high-power electromagnetic waves are incident, the PIN diodes on the top and bottom layers are turned on and are equivalent to resistors. At this time, the structure is equivalent to a pure inductor circuit, which will provide a wider shielding band at low frequencies. When low-power electromagnetic waves are incident, the PIN diodes are disconnected and are equivalent to capacitors. At this time, the structure is equivalent to a series LC resonator, which will provide a wider wave transmission band at low frequencies. The top and bottom layers have good characteristics of insertion loss IL and shielding effectiveness SE within the band, and the combination of the two can increase the bandwidth.

[0015] The top and bottom metal units of the structure are made of copper, which has good conductivity and stable properties. The dielectric substrate is F4B265, with a relative dielectric constant of 2.65 and a loss tangent of 0.001. The top and bottom metal units are printed on both sides of the dielectric substrate.

[0016] The energy selective surface with low-frequency cross-band ultra-wideband characteristics implemented by the present invention adopts a full-wave simulation method.

[0017] Figure 4 and Figure 5 They are respectively the insertion loss IL at low power and the shielding effectiveness SE at high power of the energy selective surface of the present invention. The results show that when a high-power electromagnetic wave is incident on the structure, the PIN diode is turned on and is equivalent to a resistor, and power protection is achieved in the range of 0-5.6GHz, and the transmission coefficient is suppressed below -15dB; when a low-power electromagnetic wave is incident on the structure, the PIN diode is turned off and is equivalent to a capacitor, and wave transmission is achieved in the range of 0-5.6 GHz, and the transmission coefficient is above -3dB. The results show that the functions of low-power wave transmission and high-power protection are achieved in the low-frequency range of 0-5.6GHz.

[0018] The above is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be noted that any improvements and modifications made within the spirit and principle of the present invention should be considered within the protection scope of the present invention.

Claims

1. An energy selective surface with low-frequency cross-band ultra-wideband characteristics, characterized in that: include: The top metal structure unit, the middle layer dielectric substrate and the bottom metal structure unit, the top metal structure unit is composed of nine cross-shaped patch metal structures and a PIN diode, and the bottom metal structure unit is formed by rotating the top metal structure unit by 45 degrees.

2. The energy selective surface with low-frequency cross-band ultra-wideband characteristics according to claim 1, characterized in that: The cross metal unit of the top metal structure is 0.3 mm wide and 2.4 mm long, and the PIN diodes are placed at an interval of 0.15 mm; the cross metal unit of the bottom metal structure is 0.3 mm wide and 1.9 mm long, and the PIN diodes are placed at an interval of 0.15 mm.

3. The energy selective surface with low-frequency cross-band ultra-wideband characteristics according to claim 1, characterized in that: The dielectric substrate is made of F4B265, with a relative dielectric constant of 2.65 and a loss tangent of 0.

001. The metal structural unit material is copper with good conductivity and stable properties.

4. The energy selective surface with low-frequency cross-band ultra-wideband characteristics according to claim 1, characterized in that: The model of the PIN diode used is MA4P275. When the diode is disconnected, it is equivalent to a 0.04pF capacitor, and when the diode is turned on, it is equivalent to a 5Ω resistor.

5. The energy selective surface with low-frequency cross-band ultra-wideband characteristics according to claim 3, characterized in that: The period of the dielectric substrate is 7.5 mm and the thickness is 1.6 mm.

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