Method for manufacturing semiconductor device

Abstract

The embodiment of the invention relates to a manufacturing method of a semiconductor device. A method of manufacturing a semiconductor device includes a first process, a second process, and a third process. The first process is performed on a semiconductor component including a first surface and a crystal. The first processing includes at least one of injecting a first element from the first surface to a first portion of the semiconductor component and irradiating the first portion with a particle beam. In the second process, a second element is injected into the first region of the semiconductor component, and the second element is not injected into the second region of the semiconductor component. The first region and the second region are located between the first surface and the first portion. A direction from the first region toward the second region is along the first surface. The third process, after the second process, applies irradiation of a first electromagnetic wave having a first peak wavelength from the first surface to the semiconductor component via the first region and the second region.

Description

[0001] Related Applications

[0002] This application claims priority based on Japanese Patent Application No. 2023-151794 (filing date: September 20, 2023). This application incorporates all the contents of the basic application by reference. Technical Field

[0003] An embodiment of the present invention relates to a method for manufacturing a semiconductor device. Background Art

[0004] For example, there are semiconductor devices such as reverse conducting IGBT (RC-IGBT (Insulate-Gate Bipolar Transistor)). A method for manufacturing a semiconductor device capable of improving characteristics is desired. Summary of the invention

[0005] According to an embodiment, a method for manufacturing a semiconductor device includes a first process, a second process, and a third process. The first process is performed on a semiconductor component including a first surface and a crystal. The first process includes at least one of injecting a first element from the first surface into a first portion of the semiconductor component and irradiating the first portion with a particle beam. In the second process, a second element is injected into a first region of the semiconductor component, and the second element is not injected into a second region of the semiconductor component. The first region and the second region are located between the first surface and the first portion. The direction from the first region toward the second region is along the first surface. The third process is performed after the second process, and a first electromagnetic wave having a first peak wavelength is irradiated from the first surface to the semiconductor component via the first region and the second region.

[0006] According to the embodiment, a method for manufacturing a semiconductor device capable of improving characteristics can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 (a)~ Figure 1 (d) is a schematic cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment.

[0008] Figure 2 This is a flowchart illustrating a method for manufacturing a semiconductor device according to the first embodiment.

[0009] Figure 3 is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment. DETAILED DESCRIPTION

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0011] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as in reality. Even when the same part is shown, the size and ratio may be shown differently depending on the drawings.

[0012] In the present specification and each drawing, for drawings that have already appeared, the same reference numerals are used for the same elements as those previously described, and detailed description thereof will be appropriately omitted.

[0013] (First Embodiment)

[0014] Figure 1 (a)~ Figure 1 (d) is a schematic cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment.

[0015] Figure 2 This is a flowchart illustrating a method for manufacturing a semiconductor device according to the first embodiment.

[0016] like Figure 2 As shown, the method for manufacturing a semiconductor device according to the embodiment includes a first process S1, a second process S2, and a third process S3. The manufacturing method may further include a fourth process S4.

[0017] like Figure 1 As shown in (a), the first process S1 is performed on the semiconductor component 10. The semiconductor component 10 includes a first surface 10f and includes a crystal. The semiconductor component 10 includes, for example, a silicon crystal. The semiconductor component 10 may also include, for example, a SiC crystal.

[0018] The first process S1 includes at least one of implanting the first element from the first surface 10f into the first portion 10P of the semiconductor component 10 and irradiating the first portion 10P with a particle beam. For example, the first process S1 forms a crystal defect 10D in the first portion 10P.

[0019] The direction perpendicular to the first surface 10f is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction. At least a portion of the first portion 10P is along the XY plane.

[0020] The first element includes, for example, at least one selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and radon. By implanting such a first element, defects 10D are formed in the first portion 10P.

[0021] In the first process S1, the first portion 10P may be irradiated with a particle beam. The particle beam includes, for example, a charged particle beam. The particle beam includes, for example, an electron beam. By irradiating with such a particle beam, a defect 10D is formed in the first portion 10P.

[0022] In one example, the first element may include at least one selected from the group consisting of phosphorus, arsenic, antimony, boron, gallium, indium, and oxygen. For example, the first element may include at least one selected from the group consisting of phosphorus, arsenic, antimony, and oxygen. With such a first element, the first portion 10P may also become an n-type semiconductor region. For example, the first element may include at least one selected from the group consisting of boron, gallium, and indium. With such a first element, the first portion 10P may also become a p-type semiconductor region. For example, the defect 10D may also be formed by the first element that realizes the conductivity type.

[0023] like Figure 1 As shown in (b), in the second process S2, the second element is injected into the first region 10a of the semiconductor component 10. The second element is not injected into the second region 10b of the semiconductor component 10. In this way, in the second process S2, the second element is selectively injected into the first region 10a. An example of the second element will be described later.

[0024] like Figure 1 As shown in (b), the first region 10a and the second region 10b are located between the first surface 10f and the first portion 10P. The direction from the first region 10a toward the second region 10b is along the first surface 10f.

[0025] The first region 10a may be in an island shape, a stripe shape, etc. The planar shape of the first region 10a is arbitrary.

[0026] The third process S3 is performed after the second process S2. Figure 1 As shown in (c), in the third process S3, the semiconductor component 10 is irradiated with the first electromagnetic wave 81 from the first surface 10f via the first region 10a and the second region 10b. The first electromagnetic wave 81 has, for example, a first peak wavelength.

[0027] The first part 10P includes an overlapping part 10p that overlaps with the first region 10a in the Z-axis direction (first direction D1) and a non-overlapping part 10q that does not overlap with the first region 10a. The non-overlapping part 10q overlaps with the second region 10b in the first direction D1. The first electromagnetic wave 81 reaches the non-overlapping part 10q through the second region 10b. By irradiation with the first electromagnetic wave 81, the defect 10D contained in the non-overlapping part 10q is restored. On the other hand, the first electromagnetic wave 81 is attenuated in the first region 10a. Therefore, the degree of recovery of the defect 10D contained in the overlapping part 10p is low. In the overlapping part 10p, the defect 10D remains.

[0028] Thus, in the embodiment, the crystal defect 10D can be effectively selectively formed. The defect 10D can function as a trap for carriers flowing in the semiconductor component 10, for example. The defect 10D can control the lifetime of the carriers, for example. By locally forming the defect 10D in the semiconductor component 10, it is possible to effectively suppress the flow of carriers injected during the operation of the semiconductor device in the semiconductor component 10. According to the embodiment, a method for manufacturing a semiconductor device capable of improving characteristics can be provided.

[0029] By applying the method for manufacturing a semiconductor device of the embodiment, for example, the characteristics of a RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor) can be effectively improved. For example, in a RC-IGBT, turn-off loss can be effectively suppressed.

[0030] As described above, in the embodiment, the first process S1 includes forming a crystal defect (defect 10D) in the first portion 10P.

[0031] At least a portion of the first electromagnetic wave 81 irradiated in the third process S3 is absorbed by the first region 10a. In the second process S2, such a first region 10a is formed. That is, the second process S2 makes the first absorption rate of the first region 10a for the electromagnetic wave of the first peak wavelength higher than the second absorption rate of the second region 10b for the electromagnetic wave of the first peak wavelength.

[0032] As described above, in the second process S2, the second element is implanted into the first region 10a. As a result, the crystallinity in the first region 10a is reduced. For example, the crystallinity in the first region 10a after the second process S2 is lower than the crystallinity in the second region 10b after the second process S2.

[0033] For example, before the second process S2, the first region 10a and the second region 10b include crystals. After the second process S2, at least a portion of the first region 10a may include an amorphous region. In the first region 10a with low crystallinity, the first electromagnetic wave 81 having the first peak wavelength is effectively absorbed. As a result, the defect 10D in the overlapping portion 10p overlapping the first region 10a effectively remains.

[0034] For example, the second element injected in the second treatment S2 may include at least one selected from the group consisting of phosphorus, arsenic, antimony, silicon, germanium, carbon, nitrogen, oxygen and argon. Thus, the crystallinity in the first region 10a injected with the second element is effectively reduced. For example, the second treatment S2 may also include a first injection and a second injection. In the first injection, for example, at least one element selected from the group consisting of silicon, germanium, carbon, nitrogen, oxygen and argon is injected. In the second injection, for example, at least one element selected from the group consisting of phosphorus, arsenic and antimony is injected. The second injection may be performed after the first injection. The first injection may also be performed after the second injection. For example, electromagnetic waves (such as infrared lasers, etc.) may also be irradiated between the first injection and the second injection. Activation may be performed by irradiation with the electromagnetic waves.

[0035] The first region 10a into which the second element is injected in the second process S2 may also have conductivity imparted by the second element. The crystallinity of the first region 10a reduced by the injection of the second element may also be reduced in the fourth process S4 (see Figure 2 ) is restored.

[0036] The fourth process S4 is performed after the third process S3. Figure 1 As shown in (d), in the fourth process S4, the first region 10a is irradiated with a second electromagnetic wave 82. By irradiating the first region 10a with the second electromagnetic wave 82, for example, the crystallinity of the first region 10a is restored. The second electromagnetic wave 82 has a second peak wavelength. In one example, the second peak wavelength is shorter than the first peak wavelength. By irradiating the first region 10a with such a second electromagnetic wave 82, the crystallinity of the first region 10a can be more effectively restored.

[0037] For example, the first electromagnetic wave 81 is infrared light. The second electromagnetic wave 82 is ultraviolet light or visible light. For example, the first peak wavelength is greater than 690nm and less than 3000nm. For example, the second peak wavelength is greater than 100nm and less than 690nm. In one example, the first peak wavelength is 808nm. In one example, the second peak wavelength is 527nm. For example, the peak wavelength of the first electromagnetic wave 81 may also be greater than 100nm and less than 3000nm. For example, the peak wavelength of the second electromagnetic wave 82 may also be greater than 100nm and less than 830nm.

[0038] In one example, the first electromagnetic wave 81 is an infrared laser. The second electromagnetic wave 82 is a green laser. For example, the first electromagnetic wave 81 may include a pulsed laser having a first pulse width of 1 μs or more and 200 μs or less. For example, the second electromagnetic wave 82 may include a pulsed laser having a second pulse width of 50 ns or more and 1200 ns or less.

[0039] For example, the irradiation of the first region 10a with the second electromagnetic wave 82 may melt at least a portion of the first region 10a. Thus, the defect 10D of the first region 10a is effectively restored. On the other hand, the irradiation of the first electromagnetic wave 81 with the first region 10a may not melt the first region 10a.

[0040] like Figure 1 As shown in (d), the irradiation of the second electromagnetic wave 82 may include irradiating the second region 10b with the second electromagnetic wave 82. The crystallinity of the second region 10b is improved. The irradiation is performed by a simple process.

[0041] Thus, the fourth treatment S4 increases the crystallinity of the first region 10a, for example, to obtain good conductivity. The crystallinity of the first region 10a after the fourth treatment S4 is higher than the crystallinity of the first region 10a after the third treatment S3 and before the fourth treatment S4.

[0042] In the case where the first process S1 includes implantation of the first element, the dose of the first element in the implantation of the first element may be lower than the second dose of the second element for the first region 10a in the second process S2. By implanting the low dose of the first element, the target defect 10D can be effectively formed. The dose of the first element in the implantation of the first element may be, for example, 1×10 12 cm -2 Above and 5×10 13 cm -2 Below (for example, about 2×10 12 cm -2 )wait.

[0043] On the other hand, by implanting the second element at a sufficiently high dose, the absorptivity of the first region 10a with respect to the first peak wavelength is effectively increased. For example, after the second process S2, at least a portion of the first region 10a includes an amorphous region.

[0044] In one example, the second dose of the second element in the first region 10a in the second treatment S2 is 5×10 14 cm -2 The second dose can be, for example, 1×10 16 cm -2 The second dose can be, for example, 5×1016 cm -2 the following.

[0045] For example, in the first sample that did not perform the second treatment S2 but performed the first treatment S1 and the third treatment S3, the activation rate of the defect 10D in the overlapped portion 10p was 73%. 15 cm -2 ) and the second sample of the third treatment S3, the activation rate of the defect 10D in the overlapped portion 10p was less than 0.5%. 15 cm -2 ) and the third sample of the third treatment S3, the activation rate of the defect 10D in the overlapping portion 10p is less than 0.2%. In this way, by implementing the second treatment S2, the first electromagnetic wave 81 in the third treatment S3 is effectively attenuated in the first region 10a, and the defect 10D effectively remains in the overlapping portion 10p.

[0046] At least in the second dose 5 × 10 14 cm -2 In the above case, the defect 10D can be effectively left.

[0047] (Second Embodiment)

[0048] The second embodiment relates to a semiconductor device to which the method for manufacturing the semiconductor device of the first embodiment can be applied.

[0049] Figure 3 is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.

[0050] like Figure 3 As shown, the semiconductor device 110 according to the second embodiment includes a first electrode 51 and a semiconductor component 10 .

[0051] The semiconductor component 10 includes a first semiconductor region 11, a second semiconductor region 12, a third semiconductor region 13, and a fourth semiconductor region 14. The first semiconductor region 11 is of the first conductivity type. The second semiconductor region 12 is provided between the first electrode 51 and the first semiconductor region 11. The second semiconductor region 12 is of the first conductivity type.

[0052] The third semiconductor region 13 is provided between the first electrode 51 and the first semiconductor region 11 and is of the second conductivity type. The second direction D2 from the second semiconductor region 12 toward the third semiconductor region 13 intersects with the first direction D1 from the first electrode 51 toward the semiconductor component 10. The first conductivity type is one of the n-type and the p-type. The second conductivity type is the other of the n-type and the p-type. Hereinafter, the first conductivity type is the n-type and the second conductivity type is the p-type.

[0053] The fourth semiconductor region 14 is of the first conductivity type and is located between the second semiconductor region 12 and the first semiconductor region 11 and between the third semiconductor region 13 and the first semiconductor region 11 .

[0054] The semiconductor component 10 includes a first partial region p1 and a second partial region p2. The first partial region p1 overlaps the second semiconductor region 12 in the first direction D1. The second partial region p2 overlaps the third semiconductor region 13 in the first direction D1. The carrier concentration in the first partial region p1 is lower than the carrier concentration in the second partial region p2.

[0055] In the semiconductor device 110, the second semiconductor region 12 corresponds to the first region 10a. The third semiconductor region 13 may correspond to the second region 10b. By irradiating the first electromagnetic wave 81 through the second semiconductor region 12, the first electromagnetic wave 81 is attenuated, and the carrier concentration in the first partial region p1 is maintained low. On the other hand, in the second partial region p2 that does not overlap with the second semiconductor region 12, a high carrier density is obtained. For example, it is considered that the high carrier density in the second partial region p2 is based on, for example, the recovery of the crystal defect 10D caused by the first electromagnetic wave 81.

[0056] like Figure 3 As shown, the semiconductor component 10 may further include a third partial region p3. The third partial region p3 is disposed between the second semiconductor region 12 and the first partial region p1 in the first direction D1. The carrier concentration in the third partial region p3 may also be higher than the carrier concentration in the first partial region p1.

[0057] In the semiconductor device 110 , the carrier concentration in the second semiconductor region 12 may be higher than the carrier concentration in the first partial region p1 . The carrier concentration in the second semiconductor region 12 is higher than the carrier concentration in the first semiconductor region 11 .

[0058] like Figure 3As shown, the semiconductor device 110 may further include a second electrode 52, a third electrode 53, and a first insulating component 41. The semiconductor component 10 is disposed between the first electrode 51 and the second electrode 52 in the first direction D1. The first semiconductor region 11 includes a first semiconductor portion 11a and a second semiconductor portion 11b. The first semiconductor portion 11a is disposed between the second semiconductor region 12 and the second electrode 52 in the first direction D1. The second semiconductor portion 11b is disposed between the third semiconductor region 13 and the second electrode 52 in the first direction D1.

[0059] The semiconductor component 10 may further include a sixth semiconductor region 16 of the second conductivity type, a seventh semiconductor region 17 of the second conductivity type, and an eighth semiconductor region 18 of the first conductivity type. The sixth semiconductor region 16 is disposed between the first semiconductor portion 11a and the second electrode 52 in the first direction D1. The eighth semiconductor region 18 is disposed between the second semiconductor portion 11b and the second electrode 52 in the first direction D1. At least a portion of the seventh semiconductor region 17 is disposed between the eighth semiconductor region 18 and the second semiconductor portion 11b in the first direction D1.

[0060] The second electrode 52 is electrically connected to the sixth semiconductor region 16 and the eighth semiconductor region 18. The third electrode 53 is opposite to the first semiconductor region 11, the seventh semiconductor region 17, and the eighth semiconductor region 18. At least a portion of the first insulating member 41 is provided between the third electrode 53 and the semiconductor component 10. The first insulating member 41 electrically insulates the third electrode 53 from the semiconductor component 10.

[0061] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The second semiconductor region 12 is included in a FRD (Fast Recovery Diode). The third semiconductor region 13 is included in an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 110 is, for example, an RC-IGBT.

[0062] like Figure 3 As shown, the semiconductor component 10 may further include a ninth semiconductor region 19 of the second conductivity type. The ninth semiconductor region 19 is disposed between the seventh semiconductor region 17 and the second electrode 52 in the first direction D1. The eighth semiconductor region 18 is disposed between the third electrode 53 and the ninth semiconductor region 19. The impurity concentration of the second conductivity type in the ninth semiconductor region 19 is higher than the impurity concentration of the second conductivity type in the seventh semiconductor region 17. The second electrode 52 is electrically connected to the ninth semiconductor region 19.

[0063] In an embodiment, information related to defect 10D can be obtained, for example, by evaluating carrier density, etc. Information related to defect 10D can also be obtained, for example, by electron microscope observation or X-ray diffraction, etc. Information related to crystallinity can be obtained, for example, by electron microscope observation or X-ray diffraction, etc. Information related to length and thickness is obtained by electron microscope observation, etc. Information related to the presence and concentration of elements is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc.

[0064] The implementation method may include the following technical solutions:

[0065] (Technical Solution 1)

[0066] A method for manufacturing a semiconductor device comprises: a first treatment performed on a semiconductor component including a first surface and including crystals, the first treatment comprising injecting a first element from the first surface into a first portion of the semiconductor component, and irradiating the first portion with at least one of a particle beam; a second treatment of injecting a second element into a first region of the semiconductor component and not injecting the second element into a second region of the semiconductor component, wherein the first region and the second region are located between the first surface and the first portion, and along the first surface in a direction from the first region toward the second region; and a third treatment of irradiating the semiconductor component with a first electromagnetic wave having a first peak wavelength from the first surface via the first region and the second region after the second treatment.

[0067] (Technical Solution 2)

[0068] The method for manufacturing a semiconductor device according to Technical Solution 1, wherein the first process includes forming a crystal defect in the first portion.

[0069] (Technical Solution 3)

[0070] The method for manufacturing a semiconductor device according to Technical Solution 1 or 2, wherein the second treatment makes the first region's first absorption rate for electromagnetic waves of the first peak wavelength higher than the second absorption rate of the second region's second absorption rate for the electromagnetic waves of the first peak wavelength.

[0071] (Technical Solution 4)

[0072] A method for manufacturing a semiconductor device according to any one of technical solutions 1 to 3, wherein the first element includes at least one selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon and radon, and the particle beam includes an electron beam.

[0073] (Technical Solution 5)

[0074] The method for manufacturing a semiconductor device according to any one of technical solutions 1 to 3, wherein the semiconductor component includes silicon, and the first element includes at least one selected from the group consisting of phosphorus, arsenic, and antimony.

[0075] (Technical Solution 6)

[0076] A method for manufacturing a semiconductor device according to any one of technical solutions 1 to 5, wherein the second element includes at least one selected from the group consisting of phosphorus, arsenic, antimony, silicon, germanium, carbon, nitrogen, oxygen and argon.

[0077] (Technical Solution 7)

[0078] The method for manufacturing a semiconductor device according to any one of technical solutions 1 to 6, further comprising a fourth process performed after the third process, wherein the fourth process includes irradiating the first region with a second electromagnetic wave.

[0079] (Technical Solution 8)

[0080] The method for manufacturing a semiconductor device according to Technical Solution 7, wherein the irradiation of the second electromagnetic wave includes irradiating the second region with the second electromagnetic wave.

[0081] (Technical Solution 9)

[0082] A method for manufacturing a semiconductor device according to Technical Solution 7 or 8, wherein the second electromagnetic wave has a second peak wavelength, and the second peak wavelength is shorter than the first peak wavelength.

[0083] (Technical Solution 10)

[0084] According to the method for manufacturing a semiconductor device according to Technical Solution 9, the first electromagnetic wave is infrared light, and the second electromagnetic wave is ultraviolet light or visible light.

[0085] (Technical Solution 11)

[0086] The method for manufacturing a semiconductor device according to any one of Technical Solutions 7 to 10, wherein the fourth treatment increases the crystallinity of the first region.

[0087] (Technical Solution 12)

[0088] A method for manufacturing a semiconductor device according to any one of technical solutions 7 to 10, wherein the crystallinity of the first region after the fourth treatment is higher than the crystallinity of the first region after the third treatment and before the fourth treatment.

[0089] (Technical Solution 13)

[0090] A method for manufacturing a semiconductor device according to any one of technical solutions 7 to 11, wherein the irradiation of the first region with the second electromagnetic wave melts at least a portion of the first region.

[0091] (Technical Solution 14)

[0092] The method for manufacturing a semiconductor device according to Technical Solution 13, wherein the irradiation of the first electromagnetic wave to the first region does not melt the first region.

[0093] (Technical Solution 15)

[0094] The method for manufacturing a semiconductor device according to technical solution 3, wherein the second dose of the second element to the first region in the second process is 5×10 14 cm -2 above.

[0095] (Technical Solution 16)

[0096] The method for manufacturing a semiconductor device according to technical solution 3, wherein the second dose of the second element to the first region in the second process is 5×10 14 cm -2 Above and 5×10 16 cm -2 the following.

[0097] (Technical Solution 17)

[0098] A method for manufacturing a semiconductor device according to any one of technical solutions 1 to 13, wherein the first process includes the implantation of the first element, and a dose of the first element in the implantation of the first element is lower than a second dose of the second element for the first region in the second process.

[0099] (Technical Solution 18)

[0100] A method for manufacturing a semiconductor device according to any one of technical solutions 7 to 14, wherein the second electromagnetic wave includes a pulse laser having a second pulse width of greater than 50 ns and less than 1200 ns.

[0101] (Technical Solution 19)

[0102] A method for manufacturing a semiconductor device according to any one of technical solutions 1 to 18, wherein the first electromagnetic wave includes a pulse laser having a first pulse width of not less than 1 μs and not more than 200 μs.

[0103] (Technical Solution 20)

[0104] A method for manufacturing a semiconductor device according to any one of technical solutions 1 to 19, wherein after the second process, at least a portion of the first region includes an amorphous region.

[0105] According to the embodiment, a method for manufacturing a semiconductor device capable of improving characteristics can be provided.

[0106] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art can obtain the same effect by appropriately selecting from the known range and implementing the present invention in the same manner, the specific configuration of each element such as an electrode, a semiconductor component, and an insulating component included in a semiconductor device is included in the scope of the present invention.

[0107] Furthermore, any combination of two or more elements in each specific example within a technically possible range is included in the scope of the present invention as long as the gist of the present invention is included.

[0108] Furthermore, all semiconductor devices that can be implemented by a person skilled in the art by appropriately changing the design of the semiconductor device described above as an embodiment of the present invention belong to the scope of the present invention as long as they include the gist of the present invention.

[0109] Furthermore, within the scope of the concept of the present invention, those skilled in the art can conceive of various changes and modifications, and these changes and modifications are also considered to belong to the scope of the present invention.

[0110] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope and subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

[0111] Description of Reference Numerals

[0112] 10: semiconductor component, 10D: defect, 10P: first part, 10a, 10b: first and second regions, 10f: first surface, 10p: overlapping part, 10q: non-overlapping part, 11~19: first to ninth semiconductor regions, 11a, 11b: first and second semiconductor parts, 41: first insulating component, 51~53: first to third electrodes, 81, 82: first and second electromagnetic waves, 110: semiconductor device, D1, D2: first and second directions, S1~S4: first to fourth treatments, p1~p3: first to third partial regions.

Claims

1. A method for manufacturing a semiconductor device, wherein: The following steps are required: A first treatment is performed on a semiconductor component including a first surface and a crystal, wherein the first treatment includes at least one of implanting a first element into a first portion of the semiconductor component from the first surface and irradiating the first portion with a particle beam; A second process of injecting a second element into a first region of the semiconductor component and not injecting the second element into a second region of the semiconductor component, wherein the first region and the second region are located between the first surface and the first portion, and a direction from the first region toward the second region is along the first surface; as well as A third process is to irradiate the semiconductor component with a first electromagnetic wave having a first peak wavelength from the first surface through the first region and the second region after the second process.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The first processing includes forming crystalline defects in the first portion.

3. The method for manufacturing a semiconductor device according to claim 1, wherein: The second processing makes a first absorption rate of the first region for electromagnetic waves with the first peak wavelength higher than a second absorption rate of the second region for the electromagnetic waves with the first peak wavelength.

4. The method for manufacturing a semiconductor device according to claim 1, wherein: The first element includes at least one selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and radon, The particle beam includes an electron beam.

5. The method for manufacturing a semiconductor device according to claim 4, wherein: The second element includes at least one selected from the group consisting of phosphorus, arsenic, antimony, silicon, germanium, carbon, nitrogen, oxygen, and argon.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein: further comprising a fourth process performed after the third process, The fourth process includes irradiating the first area with a second electromagnetic wave.

7. The method for manufacturing a semiconductor device according to claim 6, wherein: The second electromagnetic wave has a second peak wavelength, The second peak wavelength is shorter than the first peak wavelength.

8. The method for manufacturing a semiconductor device according to claim 7, wherein: The first electromagnetic wave is infrared, The second electromagnetic wave is ultraviolet light or visible light.

9. The method for manufacturing a semiconductor device according to claim 3, wherein: The second dose of the second element in the first region in the second treatment is 5×10 14 cm -2 above.

10. The method for manufacturing a semiconductor device according to claim 1, wherein: After the second treatment, at least a portion of the first region includes an amorphous region.

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