A method for deep hole metallization coating of glass substrate

Abstract

The invention relates to the technical field of glass through-hole processing, and in particular to a method for deep-hole metallization coating of a glass carrier, comprising: performing through-hole processing on a glass carrier, ultrasonic cleaning, and drying to obtain a pre-treated glass carrier; marking one side of the pre-treated glass carrier as a surface A, and marking the other side of the pre-treated glass carrier as a surface B; pasting tape on the surface A, and then performing magnetron sputtering coating on the surface B; removing the tape and cleaning the surface A to obtain a pre-metallized glass carrier; during the coating process, heating to 180-250° C. under a vacuum state, etching the surface of the pre-treated glass carrier, and then sputtering and depositing ceramic layers in sequence; marking one side of the pre-metallized glass carrier that has been coated with magnetron sputtering as a surface C, and marking the other side of the pre-metallized glass carrier as a surface D; pasting tape on the surface C, and performing magnetron sputtering coating on the surface D; removing the tape and cleaning the surface C; the coating process is the same as the above-mentioned coating process.

Description

Technical Field

[0001] The invention relates to the technical field of glass through-hole processing, and in particular to a deep-hole metallization coating method for a glass carrier plate. Background Art

[0002] Coated glass is a glass deep-processing product with multiple functions such as decoration, light control, heat regulation, energy saving, and environmental improvement. Glass coating is to attach certain elements or compounds to the surface of glass through various physical and chemical methods, so that it has the expected performance.

[0003] At present, due to the high brittleness of glass, the glass carrier cannot be plastically deformed, which is very different from the coating properties. In order to obtain an airtight seal between glass and metal, the metallization problem of glass must be solved. When the glass carrier is metallized, the sputtered film layer will be deposited on the diffraction film layer with poor adhesion, resulting in a loose through-hole film layer, affecting the reliability of the metallized through-hole.

[0004] At present, how to find a method to improve the fastness of the deep-hole metallized film layer of the glass substrate and ensure the reliability of the through-hole has become a technical problem that needs to be solved. Summary of the invention

[0005] The purpose of the present invention is to solve the shortcomings of the prior art and to propose a method for deep-hole metallization coating of a glass carrier.

[0006] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0007] S1, performing through-hole treatment on the glass carrier, ultrasonic cleaning, and drying to obtain a pre-treated glass carrier;

[0008] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0009] During the coating process, the glass substrate is heated to 180-250°C under vacuum, and SiO2, SmCo5, TiW, Y3Al5O12, and AgCu are deposited in sequence by sputtering after the surface of the pre-treated glass substrate is etched;

[0010] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as surface C, and the other side of the pre-metallized glass substrate is marked as surface D; a tape is attached to surface C, and surface D is magnetron sputtering coated; then the tape is removed, and surface C is cleaned;

[0011] During the coating process, the glass substrate is heated to 180-250°C under vacuum, and SiO2, SmCo5, TiW, and Y3Al5O are sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu.

[0012] Preferably, in S1, deionized water and anhydrous ethanol are used in sequence for ultrasonic cleaning, and the ultrasonic frequency is 25-85 kHz.

[0013] Preferably, in S2 or S3, the tape is a polyimide tape.

[0014] Preferably, in S2 or S3, SiO2 layer, SmCo5 layer, TiW layer, Y3Al5O 12 The thickness ratio of the Ag layer and the AgCu layer is 10-12:6.5-8.0:5-11:2.5-3.5:4-8.

[0015] Preferably, in the sputtering deposition process of SiO2 layer in S2 or S3, the target material is SiAl, and the sputtering process atmosphere is: the flow rate of working gas Ar is 400-500sccm, and the flow rate of reaction gas O2 is 600-750sccm.

[0016] Preferably, during the sputtering deposition of the SmCo5 layer in S2 or S3, the target material is SmCo5, and the flow rate of the working gas Ar is 1000-1250 sccm.

[0017] Preferably, in the sputtering deposition process of TiW layer in S2 or S3, the target material is TiW material, and the flow rate of the working gas Ar is 1000-1250 sccm.

[0018] Preferably, sputtering deposition of S2 or S3 Y3Al5O 12 During the layering process, the target material is yttrium aluminum garnet, and the working gas Ar flow rate is 1000-1250sccm.

[0019] Preferably, in the sputtering deposition process of the AgCu layer in S2 or S3, the target material is a copper-silver alloy, and the flow rate of the working gas Ar is 1000-1250 sccm.

[0020] A metallized coated glass carrier is prepared by adopting the above-mentioned glass carrier deep-hole metallized coating method.

[0021] The present invention adopts magnetron sputtering coating technology to realize metallization coating of glass substrate through-holes, which has no restrictions on the deposited materials and has good repeatability and a firm film layer, and is particularly suitable for metallization deposition of substrates with holes.

[0022] The present invention sputters and deposits a SmCo5 layer between the SiO2 layer and the TiW layer, and sputters and deposits a Y3Al5O5 layer between the TiW and the AgCu layer. 12layer, thus forming a dense coating, which not only has excellent anti-corrosion effect, but also can effectively solve the problem of peeling caused by film quality problems. The film layer has high firmness, ensuring the reliability of metallized through-holes.

[0023] In the coating process of the present invention, SiO2, SmCo5, TiW, Y3Al5O are deposited in sequence by sputtering. 12 , AgCu, not only has good adhesion to the substrate, but the process is also simple and easy to operate, and has great promotion and use value. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a comparison chart of the bonding strength of the metallized coated glass carriers obtained in Example 5 and Comparative Examples 1 and 2.

[0025] Figure 2 The figure is a comparison chart of the reflectivity and transmittance of the metallized coated glass substrates obtained in Example 5 and Comparative Examples 1 and 2.

[0026] Figure 1 and Figure 2 The line segments at the top of the bars represent the standard deviation. DETAILED DESCRIPTION

[0027] The present invention will be further explained below in conjunction with specific embodiments. Example 1

[0028] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0029] S1, treating the through holes of the glass substrate, using deionized water and anhydrous ethanol to ultrasonically clean the substrate in sequence, with an ultrasonic frequency of 25-85kHz, and drying the substrate to obtain a pretreated glass substrate;

[0030] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a polyimide tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the polyimide tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0031] During the coating process, the glass substrate was heated to 180°C under vacuum (5Pa), and SiO2, SmCo5, TiW, Y3Al5O12, and AgCu were sputtered and deposited in sequence, with the thickness of the SiO2 layer being 10nm, the thickness of the SmCo5 layer being 6.5nm, the thickness of the TiW layer being 5nm, and the thickness of the Y3Al5O 12 The Ag layer is 2.5nm and the AgCu layer is 4nm;

[0032] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as C surface, and the other side of the pre-metallized glass substrate is marked as D surface; a polyimide tape is attached to the C surface, and the D surface is magnetron sputtering coated; then the polyimide tape is removed, and the C surface is cleaned;

[0033] During the coating process, the glass substrate was heated to 180°C under vacuum (5Pa), and SiO2, SmCo5, TiW, and Y3Al5O were sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu, SiO2 layer thickness is 10nm, SmCo5 layer thickness is 6.5nm, TiW layer thickness is 5nm, Y3Al5O 12 The Ag layer is 2.5nm and the AgCu layer is 4nm.

[0034] In the above-mentioned sputtering deposition of SiO2 layer, the target material is SiAl (mass ratio of silicon to aluminum is 95:5), and the sputtering process atmosphere is: the working gas Ar flow rate is 400sccm, and the reaction gas O2 flow rate is 600sccm. In the above-mentioned sputtering deposition of SmCo5 layer, the target material is SmCo5, and the working gas Ar flow rate is 1000sccm. In the above-mentioned sputtering deposition of TiW layer, the target material is TiW (mass ratio of titanium to tungsten is 30:70), and the working gas Ar flow rate is 1000sccm. The above-mentioned sputtering deposition of Y3Al5O 12 In the above-mentioned sputtering deposition process of AgCu layer, the target material is made of yttrium aluminum garnet, and the working gas Ar flow rate is 1000sccm. In the above-mentioned sputtering deposition process of AgCu layer, the target material is copper-silver alloy (copper-silver mass ratio is 98:2), and the working gas Ar flow rate is 1000sccm. Example 2

[0035] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0036] S1, treating the through holes of the glass substrate, using deionized water and anhydrous ethanol to ultrasonically clean the substrate in sequence, with an ultrasonic frequency of 85 kHz, and drying the substrate to obtain a pretreated glass substrate;

[0037] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a polyimide tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the polyimide tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0038] During the coating process, the glass substrate was heated to 250°C under vacuum (5 Pa), and SiO2, SmCo5, TiW, Y3Al5O12, and AgCu were sputtered and deposited in sequence, making the thickness of the SiO2 layer 12nm, the thickness of the SmCo5 layer 8.0nm, the thickness of the TiW layer 11nm, and the thickness of the Y3Al5O12 The Ag layer is 3.5nm, and the AgCu layer is 8nm;

[0039] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as C surface, and the other side of the pre-metallized glass substrate is marked as D surface; a polyimide tape is attached to the C surface, and the D surface is magnetron sputtering coated; then the polyimide tape is removed, and the C surface is cleaned;

[0040] During the coating process, the glass substrate was heated to 250°C under vacuum (5Pa), and SiO2, SmCo5, TiW, and Y3Al5O were sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu, SiO2 layer thickness is 12nm, SmCo5 layer thickness is 8.0nm, TiW layer thickness is 11nm, Y3Al5O 12 The Ag layer is 3.5nm and the AgCu layer is 8nm.

[0041] In the above-mentioned sputtering deposition of SiO2 layer, the target material is SiAl (mass ratio of silicon to aluminum is 95:5), and the sputtering process atmosphere is: the working gas Ar flow rate is 500sccm, and the reaction gas O2 flow rate is 750sccm. In the above-mentioned sputtering deposition of SmCo5 layer, the target material is SmCo5, and the working gas Ar flow rate is 1250sccm. In the above-mentioned sputtering deposition of TiW layer, the target material is TiW (mass ratio of titanium to tungsten is 30:70), and the working gas Ar flow rate is 1250sccm. The above-mentioned sputtering deposition of Y3Al5O 12 In the above-mentioned sputtering deposition process of AgCu layer, the target material is made of yttrium aluminum garnet, and the working gas Ar flow rate is 1250sccm. In the above-mentioned sputtering deposition process of AgCu layer, the target material is copper-silver alloy (copper-silver mass ratio is 98:2), and the working gas Ar flow rate is 1250sccm. Example 3

[0042] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0043] S1, treating the through holes of the glass substrate, using deionized water and anhydrous ethanol to ultrasonically clean the substrate in sequence, with an ultrasonic frequency of 40 kHz, and drying the substrate to obtain a pretreated glass substrate;

[0044] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a polyimide tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the polyimide tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0045] During the coating process, the glass substrate was heated to 240°C under vacuum (5Pa), and SiO2, SmCo5, TiW, Y3Al5O12, and AgCu were sputtered and deposited in sequence, with the thickness of the SiO2 layer being 10.5nm, the thickness of the SmCo5 layer being 7.5nm, the thickness of the TiW layer being 6nm, and the thickness of the Y3Al5O 12 The Ag layer is 3.0nm and the AgCu layer is 7nm;

[0046] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as C surface, and the other side of the pre-metallized glass substrate is marked as D surface; a polyimide tape is attached to the C surface, and the D surface is magnetron sputtering coated; then the polyimide tape is removed, and the C surface is cleaned;

[0047] During the coating process, the glass substrate was heated to 200°C under vacuum (5Pa), and SiO2, SmCo5, TiW, and Y3Al5O were sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu, SiO2 layer thickness is 11.5nm, SmCo5 layer thickness is 7.0nm, TiW layer thickness is 10nm, Y3Al5O 12 The Ag layer is 3.0nm and the AgCu layer is 5.0nm.

[0048] In the above-mentioned sputtering deposition of SiO2 layer, the target material is SiAl (mass ratio of silicon to aluminum is 95:5), and the sputtering process atmosphere is: the working gas Ar flow rate is 480sccm, and the reaction gas O2 flow rate is 630sccm. In the above-mentioned sputtering deposition of SmCo5 layer, the target material is SmCo5, and the working gas Ar flow rate is 1200sccm. In the above-mentioned sputtering deposition of TiW layer, the target material is TiW (mass ratio of titanium to tungsten is 30:70), and the working gas Ar flow rate is 1100sccm. The above-mentioned sputtering deposition of Y3Al5O 12 In the above-mentioned sputtering deposition process of AgCu layer, the target material is made of yttrium aluminum garnet, and the working gas Ar flow rate is 1150sccm. In the above-mentioned sputtering deposition process of AgCu layer, the target material is copper-silver alloy (copper-silver mass ratio is 98:2), and the working gas Ar flow rate is 1100sccm. Example 4

[0049] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0050] S1, treating the through holes of the glass substrate, using deionized water and anhydrous ethanol to ultrasonically clean the substrate in sequence, with an ultrasonic frequency of 70 kHz, and drying the substrate to obtain a pretreated glass substrate;

[0051] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a polyimide tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the polyimide tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0052] During the coating process, the glass substrate was heated to 200°C under vacuum (5Pa), and the surface was pretreated and etched, followed by sputtering deposition of SiO2, SmCo5, TiW, Y3Al5O12, and AgCu, so that the thickness of the SiO2 layer was 11.5nm, the thickness of the SmCo5 layer was 7nm, the thickness of the TiW layer was 10nm, and the thickness of the Y3Al5O 12 The Ag layer is 3.0nm, and the AgCu layer is 5nm;

[0053] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as C surface, and the other side of the pre-metallized glass substrate is marked as D surface; a polyimide tape is attached to the C surface, and the D surface is magnetron sputtering coated; then the polyimide tape is removed, and the C surface is cleaned;

[0054] During the coating process, the glass substrate was heated to 240°C under vacuum (5Pa), and SiO2, SmCo5, TiW, and Y3Al5O were sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu, SiO2 layer thickness is 10.5nm, SmCo5 layer thickness is 7.5nm, TiW layer thickness is 6nm, Y3Al5O 12 The Ag layer is 3.0nm and the AgCu layer is 7nm.

[0055] In the above-mentioned sputtering deposition of SiO2 layer, the target material is SiAl (mass ratio of silicon to aluminum is 95:5), and the sputtering process atmosphere is: the working gas Ar flow rate is 420sccm, and the reaction gas O2 flow rate is 720sccm. In the above-mentioned sputtering deposition of SmCo5 layer, the target material is SmCo5, and the working gas Ar flow rate is 1050sccm. In the above-mentioned sputtering deposition of TiW layer, the target material is TiW (mass ratio of titanium to tungsten is 30:70), and the working gas Ar flow rate is 1200sccm. The above-mentioned sputtering deposition of Y3Al5O 12 In the above-mentioned sputtering deposition process of AgCu layer, the target material is made of yttrium aluminum garnet, and the working gas Ar flow rate is 1050sccm. In the above-mentioned sputtering deposition process of AgCu layer, the target material is copper-silver alloy (copper-silver mass ratio is 98:2), and the working gas Ar flow rate is 1200sccm. Example 5

[0056] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0057] S1, treating the through holes of the glass substrate, using deionized water and anhydrous ethanol to ultrasonically clean the substrate in sequence, with an ultrasonic frequency of 54 kHz, and drying the substrate to obtain a pretreated glass substrate;

[0058] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a polyimide tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the polyimide tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0059] During the coating process, the glass substrate was heated to 220°C under vacuum (5Pa), and the surface was pretreated and etched, followed by sputtering deposition of SiO2, SmCo5, TiW, Y3Al5O12, and AgCu, so that the thickness of the SiO2 layer was 11nm, the thickness of the SmCo5 layer was 7nm, the thickness of the TiW layer was 8nm, and the thickness of the Y3Al5O 12 The Ag layer is 3nm, and the AgCu layer is 6nm;

[0060] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as C surface, and the other side of the pre-metallized glass substrate is marked as D surface; a polyimide tape is attached to the C surface, and the D surface is magnetron sputtering coated; then the polyimide tape is removed, and the C surface is cleaned;

[0061] During the coating process, the glass substrate was heated to 220°C under vacuum (5Pa), and SiO2, SmCo5, TiW, and Y3Al5O were sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu, SiO2 layer thickness is 11nm, SmCo5 layer thickness is 7nm, TiW layer thickness is 8nm, Y3Al5O 12 The Ag layer is 3nm and the AgCu layer is 6nm.

[0062] In the above-mentioned sputtering deposition of SiO2 layer, the target material is SiAl (mass ratio of silicon to aluminum is 95:5), and the sputtering process atmosphere is: the working gas Ar flow rate is 450sccm, and the reaction gas O2 flow rate is 675sccm. In the above-mentioned sputtering deposition of SmCo5 layer, the target material is SmCo5, and the working gas Ar flow rate is 1100sccm. In the above-mentioned sputtering deposition of TiW layer, the target material is TiW (mass ratio of titanium to tungsten is 30:70), and the working gas Ar flow rate is 1150sccm. The above-mentioned sputtering deposition of Y3Al5O 12 In the above-mentioned sputtering deposition process of AgCu layer, the target material is made of yttrium aluminum garnet, and the working gas Ar flow rate is 1100sccm. In the above-mentioned sputtering deposition process of AgCu layer, the target material is copper-silver alloy (copper-silver mass ratio is 98:2), and the working gas Ar flow rate is 1150sccm.

[0063] Comparative Example 1

[0064] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0065] S1, treating the through holes of the glass substrate, using deionized water and anhydrous ethanol to ultrasonically clean the substrate in sequence, with an ultrasonic frequency of 54 kHz, and drying the substrate to obtain a pretreated glass substrate;

[0066] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a polyimide tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the polyimide tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0067] During the coating process, the glass substrate was heated to 220°C under vacuum (5Pa), and SiO2, TiW, SmCo5, Y3Al5O12, and AgCu were sputtered and deposited in sequence, making the SiO2 layer 11nm thick, the TiW layer 8nm thick, the SmCo5 layer 7nm thick, and the Y3Al5O 12 The Ag layer is 3nm, and the AgCu layer is 6nm;

[0068] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as C surface, and the other side of the pre-metallized glass substrate is marked as D surface; a polyimide tape is attached to the C surface, and the D surface is magnetron sputtering coated; then the polyimide tape is removed, and the C surface is cleaned;

[0069] During the coating process, the glass substrate was heated to 220°C under vacuum (5Pa), and SiO2, TiW, SmCo5, Y3Al5O12, and AgCu were sputtered in sequence after etching the surface of the pre-metallized glass substrate, so that the thickness of the SiO2 layer was 11nm, the thickness of the TiW layer was 8nm, the thickness of the SmCo5 layer was 7nm, and the thickness of the Y3Al5O 12 The Ag layer is 3nm and the AgCu layer is 6nm.

[0070] In the above-mentioned sputtering deposition of SiO2 layer, the target material is SiAl (mass ratio of silicon to aluminum is 95:5), and the sputtering process atmosphere is: the working gas Ar flow rate is 450sccm, and the reaction gas O2 flow rate is 675sccm. In the above-mentioned sputtering deposition of TiW layer, the target material is TiW (mass ratio of titanium to tungsten is 30:70), and the working gas Ar flow rate is 1150sccm. In the above-mentioned sputtering deposition of SmCo5 layer, the target material is SmCo5, and the working gas Ar flow rate is 1100sccm. The above-mentioned sputtering deposition of Y3Al5O 12 In the above-mentioned sputtering deposition process of AgCu layer, the target material is made of yttrium aluminum garnet, and the working gas Ar flow rate is 1100sccm. In the above-mentioned sputtering deposition process of AgCu layer, the target material is copper-silver alloy (copper-silver mass ratio is 98:2), and the working gas Ar flow rate is 1150sccm.

[0071] Comparative Example 2

[0072] A method for deep hole metallization coating of a glass substrate comprises the following steps:

[0073] S1, treating the through holes of the glass substrate, using deionized water and anhydrous ethanol to ultrasonically clean the substrate in sequence, with an ultrasonic frequency of 54 kHz, and drying the substrate to obtain a pretreated glass substrate;

[0074] S2, one side of the pretreated glass carrier is marked as surface A, and the other side of the pretreated glass carrier is marked as surface B; a polyimide tape is attached to surface A, and then surface B is subjected to magnetron sputtering coating; then the polyimide tape is removed, and surface A is cleaned to obtain a pre-metallized glass carrier;

[0075] During the coating process, the glass substrate was heated to 220°C under vacuum (5 Pa), and SiO2, TiW, Y3Al5O12, and AgCu were sputtered and deposited in sequence after etching the surface of the pretreated glass substrate, so that the thickness of the SiO2 layer was 11nm, the thickness of the TiW layer was 8nm, and the thickness of the Y3Al5O 12 The Ag layer is 3nm, and the AgCu layer is 6nm;

[0076] S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as C surface, and the other side of the pre-metallized glass substrate is marked as D surface; a polyimide tape is attached to the C surface, and the D surface is magnetron sputtering coated; then the polyimide tape is removed, and the C surface is cleaned;

[0077] During the coating process, the glass substrate was heated to 220°C under vacuum (5Pa), and SiO2, TiW, and Y3Al5O were sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu, SiO2 layer thickness is 11nm, TiW layer thickness is 8nm, Y3Al5O 12 The Ag layer is 3nm and the AgCu layer is 6nm.

[0078] In the above-mentioned sputtering deposition of SiO2 layer, the target material is SiAl (mass ratio of silicon to aluminum is 95:5), and the sputtering process atmosphere is: the working gas Ar flow rate is 450sccm, and the reaction gas O2 flow rate is 675sccm. In the above-mentioned sputtering deposition of TiW layer, the target material is TiW (mass ratio of titanium to tungsten is 30:70), and the working gas Ar flow rate is 1150sccm. 12 In the above-mentioned sputtering deposition process of AgCu layer, the target material is made of yttrium aluminum garnet, and the working gas Ar flow rate is 1100sccm. In the above-mentioned sputtering deposition process of AgCu layer, the target material is copper-silver alloy (copper-silver mass ratio is 98:2), and the working gas Ar flow rate is 1150sccm.

[0079] With reference to the tensile test method in GB / T 5210-2006 "Pull-off adhesion test for paints and varnishes", tensile force was applied in the vertical direction to the metallized coated glass carriers obtained in Example 5 and Comparative Examples 1 and 2 to stretch the coating to peel it off the glass carrier to check the bonding strength between the coating and the glass carrier. Three specimens were stretched in each group and the average value was taken as the bonding strength of the coating.

[0080] like Figure 1 As shown, the bonding strength of the metallized coated glass carrier obtained in Example 5 is the highest, which is better than that of Comparative Examples 1 and 2 (P < 0.05).

[0081] The metallized coated glass substrates obtained in Example 5 and Comparative Examples 1 and 2 were placed in 20°C water, heated to 90°C and then poured out. Then 20°C water was added, heated to 90°C again and then poured out. The coating was observed after how many cycles it took for peeling to occur.

[0082] The metallized coated glass substrate obtained in Example 5 did not show any peeling after 20 cycles, while the metallized coated glass substrate obtained in Comparative Example 1 showed peeling after 12 cycles, and the metallized coated glass substrate obtained in Comparative Example 2 showed peeling after only 7 cycles.

[0083] The reflectivity and transmittance of the metallized coated glass substrates obtained in Example 5 and Comparative Examples 1 and 2 were measured. Figure 2 As shown, the metallized coated glass substrate obtained in Example 5 has the lowest reflectivity and the highest transmittance, which is better than Comparative Examples 1 and 2 (P < 0.05).

[0084] The applicant believes that this is because the present invention sputters and deposits the SmCo5 layer between the SiO2 layer and the TiW layer, and sputters and deposits the Y3Al5O5 layer between the TiW and the AgCu layer. 12 layer, thus forming a dense coating, which not only has excellent anti-corrosion effect, but also can effectively solve the problem of peeling caused by film quality problems. The film layer has high firmness, ensuring the reliability of metallized through holes, and to a certain extent enhances the transmittance and reduces the reflectivity.

[0085] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A method for deep hole metallization coating of a glass substrate, characterized in that: The steps include: S1, performing through-hole treatment on the glass carrier, ultrasonic cleaning, and drying to obtain a pre-treated glass carrier; S2. One side of the pretreated glass carrier is marked as side A, and the other side of the pretreated glass carrier is marked as side B; adhesive tape is attached to side A, and then magnetron sputtering coating is performed on side B; Then, the tape is removed, and the A surface is cleaned to obtain a pre-metallized glass carrier; During the coating process, the glass substrate is heated to 180-250°C in a vacuum state, and the surface of the pre-treated glass substrate is etched and then sputtered to deposit SiO2, SmCo5, TiW, Y3Al5O12, and AgCu in sequence; SiO2 layer, SmCo5 layer, TiW layer, Y3Al5O 12 The thickness ratio of Ag layer and AgCu layer is 10-12: 6.5-8.0: 5-11: 2.5-3.5: 4-8; S3, the side of the pre-metallized glass substrate that has been magnetron sputtering coated is marked as surface C, and the other side of the pre-metallized glass substrate is marked as surface D; a tape is attached to surface C, and surface D is magnetron sputtering coated; then the tape is removed, and surface C is cleaned; During the coating process, the glass substrate is heated to 180-250°C under vacuum, and SiO2, SmCo5, TiW, and Y3Al5O are sputtered on the surface of the pre-metallized glass substrate after etching. 12 , AgCu; SiO2 layer, SmCo5 layer, TiW layer, Y3Al5O 12 The thickness ratio of the Ag layer and the AgCu layer is 10-12:6.5-8.0:5-11:2.5-3.5:4-8.

2. The method for deep hole metallization coating of a glass substrate according to claim 1, characterized in that: In S1, deionized water and anhydrous ethanol are used for ultrasonic cleaning in sequence, and the ultrasonic frequency is 25-85kHz.

3. The method for deep hole metallization coating of a glass substrate according to claim 1, characterized in that: In S2 or S3, the tape is a polyimide tape.

4. The method for deep hole metallization coating of a glass substrate according to claim 1, characterized in that: During the sputtering deposition of SiO2 layer by S2 or S3, the target material is SiAl, and the sputtering process atmosphere is: the working gas Ar flow rate is 400-500sccm, and the reaction gas O2 flow rate is 600-750sccm.

5. The method for deep hole metallization coating of a glass substrate according to claim 1, characterized in that: During the sputtering deposition of the SmCo5 layer of S2 or S3, the target material is SmCo5, and the flow rate of the working gas Ar is 1000-1250 sccm.

6. The method for deep hole metallization coating of a glass substrate according to claim 1, characterized in that: During the sputtering deposition of the TiW layer in S2 or S3, the target material is TiW, and the flow rate of the working gas Ar is 1000-1250 sccm.

7. The method for deep hole metallization coating of a glass substrate according to claim 1, characterized in that: Sputtering deposition of Y3Al5O from S2 or S3 12 During the layering process, the target material is yttrium aluminum garnet, and the working gas Ar flow rate is 1000-1250sccm.

8. The method for deep hole metallization coating of a glass substrate according to claim 1, characterized in that: During the sputtering deposition of the AgCu layer in S2 or S3, the target material is a copper-silver alloy, and the flow rate of the working gas Ar is 1000-1250 sccm.

9. A metallized coated glass carrier, characterized in that: The glass substrate is prepared by the deep-hole metallization coating method described in any one of Examples 1-8.

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