Multi-product perovskite film layer vacuum evaporation device

Abstract

The present application relates to a kind of multi-product perovskite film layer vacuum evaporation equipment, it includes evaporation chamber and line source and mask plate being arranged in evaporation chamber, multiple line sources are side by side interval arranged in evaporation chamber bottom, and one baffle is arranged between any adjacent two line sources, multiple interval arranged cavities for placing evaporation material are formed in each line source, each cavity is provided with gas inlet hole for inert gas;Mask plate is interval arranged with multiple hollow areas and multiple described hollow areas are respectively arranged with multiple line sources one-to-one, each described hollow area is interval arranged with multiple openings, and multiple openings of the hollow area are respectively arranged with multiple cavities of corresponding line source one-to-one;The multi-product perovskite film layer vacuum evaporation equipment further includes inert gas source, which is communicated with multiple gas inlet holes by multiple pipelines, and each pipeline is provided with electric control flow valve.This application can complete different material different film thickness vacuum evaporation in the condition of not breaking empty.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of perovskite film layer preparation, and particularly relates to a multi-product perovskite film layer vacuum evaporation device. BACKGROUND

[0002] Perovskite photovoltaic cells have attracted worldwide attention due to their high visible light absorption, simple film forming process and rapid improvement of photoelectric conversion efficiency. The industrialization of perovskite solar cells first needs to solve the technical problem of uniformly preparing perovskite film layers on a large area. At present, there are many methods for preparing perovskite solar cells, mainly divided into solution method and vacuum method. The vacuum method is to directly prepare perovskite precursor materials on the substrate in a vacuum state by means of thermal evaporation, sputtering, close space sublimation (CSS), vapor transport (VTD), close space vapor transport (CSVT) and the like, without the participation of solvents throughout the process. The vacuum method can conformally deposit perovskite film layers on substrates with different roughness or morphology.

[0003] In the current perovskite evaporation, a group or several groups of line sources are used to evaporate the glass substrate, and only one group of technical specifications can be tested each time. If multiple process parameter data are needed, different materials need to be matched for multiple evaporation. For example, when collecting different matching data of X1 and X2 thicknesses of evaporation material A and Y1 and Y2 thicknesses of evaporation material B, A materials with thicknesses of X1, X1, X2 and X2 need to be evaporated on four glass substrates respectively, and B materials with thicknesses of Y1, Y2, Y1 and Y2 need to be evaporated on four glass substrates respectively, so as to obtain four matching of A materials and B materials: X1Y1, X1Y2, X2Y1 and X2Y2. However, for vacuum evaporation, each time the material is replaced, the vacuum needs to be destroyed and cooled down, and after the material is replaced, the vacuum is pumped and heated, which is time-consuming and laborious. SUMMARY

[0004] Therefore, the present application aims to provide a multi-product perovskite film layer vacuum evaporation device which can realize vacuum evaporation of different materials and different film thicknesses at one time.

[0005] To achieve the above-mentioned purpose, the present application adopts the following technical solutions:

[0006] The present application first provides a multi-product perovskite film layer vacuum evaporation device, which comprises an evaporation chamber and a line source and a mask plate arranged in the evaporation chamber; the line source is provided with a plurality of line sources which are arranged side by side and spaced apart at the bottom of the evaporation chamber, and a baffle is arranged between any two adjacent line sources, and a plurality of partitions are arranged in each line source to form a plurality of cavities for placing evaporation materials in the line source, and each cavity is provided with a gas inlet hole for introducing inert gas;

[0007] A plurality of hollowed-out areas are arranged on the mask plate and correspond to the plurality of line sources one by one, each of the hollowed-out areas is arranged with a plurality of openings, and the plurality of openings of the hollowed-out area correspond to the plurality of cavities of the corresponding line source one by one.

[0008] The multi-product perovskite film layer vacuum evaporation equipment further comprises an inert gas source in communication with the plurality of gas inlets through a plurality of pipelines, and each pipeline is provided with an electrically controlled flow valve.

[0009] As a further improvement of the above-mentioned scheme of the present application, the multi-product perovskite film layer vacuum evaporation equipment further comprises a moving part and a bracket; the moving part is arranged in the evaporation chamber; the bracket is located above the mask plate, the bracket is mounted on the moving part and moves with the moving part, and the side of the bracket facing the mask plate is adsorbed with a glass substrate.

[0010] The present application first provides a multi-product perovskite film layer vacuum evaporation equipment, which comprises an evaporation chamber, a line source and a mask plate arranged in the evaporation chamber; a plurality of cavities in communication with the evaporation chamber are arranged at the bottom of the evaporation chamber; a plurality of line sources are arranged, and each line source is arranged in a cavity; a plurality of partitions are arranged in each line source to form a plurality of cavities for placing evaporation materials in the line source; and each cavity is provided with a gas inlet for introducing inert gas.

[0011] A plurality of hollowed-out areas are arranged on the mask plate and correspond to the plurality of line sources one by one, each of the hollowed-out areas is arranged with a plurality of openings, and the plurality of openings of the hollowed-out area correspond to the plurality of cavities of the corresponding line source one by one.

[0012] The multi-product perovskite film layer vacuum evaporation equipment further comprises an inert gas source in communication with the plurality of gas inlets through a plurality of pipelines, and each pipeline is provided with an electrically controlled flow valve.

[0013] As a further improvement of the above-mentioned scheme of the present application, the multi-product perovskite film layer vacuum evaporation equipment further comprises a guide rail, and the mask plate moves along the guide rail in the evaporation chamber.

[0014] As a further improvement of the above-mentioned scheme of the present application, the height of the partition is higher than the height of the line source.

[0015] As a further improvement of the above-mentioned scheme of the present application, each partition and the line source are detachably connected.

[0016] As a further improvement of the above-mentioned scheme of the present application, the multi-product perovskite film layer vacuum evaporation equipment further comprises a plurality of cover plates, and each cover plate is detachably connected with the opening end of the line source.

[0017] As a further improvement of the above-mentioned scheme of the present application, the shape of the opening is square, circular or polygonal.

[0018] As a further improvement of the above-mentioned scheme of the present application, the evaporation chamber is provided with at least one exhaust hole.

[0019] As a further improvement of the above-mentioned scheme of the present application, the same evaporation material is placed in the chambers of the same linear source, and different evaporation materials are placed in the chambers of different linear sources.

[0020] As a further improvement of the above-mentioned scheme of the present application, the flow of the inert gas in each chamber is adjusted by the electrically-controlled flow valve according to the evaporation thickness of the evaporation material.

[0021] Compared with the prior art, the present application has the following beneficial effects:

[0022] The present application can complete the vacuum evaporation of different materials with different film thicknesses in one time without breaking the vacuum, can realize the simultaneous evaporation of multiple materials, reduces the number of breaking the vacuum and vacuuming, improves the efficiency of the experiment, the equipment occupies a small area, greatly reduces the cost of technical verification, and improves the efficiency of technical verification. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 A structure schematic view of a multi-product perovskite film layer vacuum evaporation equipment according to Embodiment 1 of the present application is provided;

[0024] Figure 2 A structure schematic view of a linear source in a multi-product perovskite film layer vacuum evaporation equipment according to Embodiment 1 of the present application is provided;

[0025] Figure 3 A structure schematic view of a mask plate in a multi-product perovskite film layer vacuum evaporation equipment according to Embodiment 1 of the present application is provided;

[0026] Figure 4 Another structure schematic view of a linear source in a multi-product perovskite film layer vacuum evaporation equipment according to Embodiment 1 of the present application is provided;

[0027] Figure 5 Another structure schematic view of a mask plate in a multi-product perovskite film layer vacuum evaporation equipment according to Embodiment 1 of the present application is provided;

[0028] Figure 6 A structure schematic view of a glass substrate after evaporation according to Embodiment 1 of the present application is provided;

[0029] Figure 7 A structure schematic view of a multi-product perovskite film layer vacuum evaporation equipment according to Embodiment 2 of the present application is provided.

[0030] Reference signs: 1, line source; 2, mask plate; 3, baffle; 4, partition; 5, chamber; 6, air inlet hole; 7, opening; 8, pipeline; 9, cover plate; 10, evaporation chamber; 11, glass substrate; 12, exhaust hole; 13, cavity. DETAILED DESCRIPTION

[0031] In order to facilitate the understanding of the present application, the present application will be described more fully below in conjunction with specific embodiments. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terms used in the specification of the present application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0033] Example 1

[0034] Reference Figure 1 The present embodiment proposes a multi-product perovskite film layer vacuum evaporation equipment, which comprises an evaporation chamber 10, a plurality of line sources 1, an inert gas source (not shown), a moving part (not shown), a mask plate 2 and a bracket (not shown), and further comprises a plurality of cover plates 9.

[0035] The evaporation chamber 10 is used to provide a high vacuum environment. In a high vacuum state, the collision and interference of gas molecules on the evaporation material particles can be reduced, so as to ensure that the evaporation material particles can be smoothly transmitted from the evaporation source to the surface of the glass substrate 11. The evaporation chamber 10 is provided with at least one exhaust hole 12, which is used to be connected with a vacuum pumping device.

[0036] A plurality of line sources 1 are arranged side by side and spaced apart at the bottom of the evaporation chamber 10, and a baffle 3 is arranged between any two adjacent line sources 1. The number of line sources 1 can be reasonably arranged according to actual needs. The height of the baffle 3 is higher than the height of the line source 1, so as to avoid the mutual influence of the evaporation materials in the adjacent two line sources 1 during evaporation. Figure 2The plurality of partitions 4 are detachably connected with the linear sources 1. Specifically, a plurality of slots are formed on the opposite sidewalls of the linear source 1, and the partitions 4 are adapted to the slots, so that the two sides of the partition 4 can be inserted into the corresponding two slots from top to bottom. The height of the partition 4 is higher than the height of the linear source 1, and in the embodiment, the height of the partition 4 can be consistent with the height of the baffle 3. The same evaporation material is placed in the plurality of cavities 5 of the same linear source 1, and different evaporation materials are placed in different linear sources 1. In this way, one cavity 5 of the linear source 1 can be regarded as a point source. The bottom of each cavity 5 of the linear source 1 is provided with a gas inlet hole 6 for introducing inert gas. In the embodiment, the total number of cavities 5 needs to be reasonably set according to actual needs. Each linear source 1 is provided with a heater for heating the evaporation material in each cavity 5 to a vapor state.

[0037] The inert gas source is arranged outside the evaporation chamber 10, and the inert gas source is communicated with the plurality of gas inlet holes 6 through a plurality of pipelines 8, and each pipeline 8 is provided with an electrically controlled flow valve. According to the evaporation thickness of the evaporation material, the flow of inert gas into each cavity 5 can be adjusted by adjusting the electrically controlled flow valve, so as to adjust the content of inert gas in each cavity 5.

[0038] The moving part is arranged above the plurality of linear sources 1 in the evaporation chamber 10. The bracket is arranged on the moving part and is driven by the moving part to move at a constant speed. The mask plate 2 is arranged below the bracket in the evaporation chamber 10 and can move relative to the bracket. The mask plate 2 is provided with a plurality of hollow areas and the plurality of hollow areas are arranged one by one corresponding to the plurality of linear sources 1. Each hollow area is provided with a plurality of openings 7, and the plurality of openings 7 of the hollow area are arranged one by one corresponding to the plurality of cavities 5 of the corresponding linear source 1. The shape of the opening 7 can be square, circular or polygonal, and the shape of the opening 7 can be reasonably selected according to actual needs. The side of the bracket facing the mask plate 2 is adsorbed with a glass substrate 11, and the glass substrate 11 moves at a constant speed with the bracket. Figure 3

[0039] The plurality of cover plates 9 are arranged one by one corresponding to the plurality of linear sources 1. When the partitions 4 in the linear source 1 are detached, the cover plate 9 can be connected with the top opening 7 end of the corresponding linear source 1 to seal the linear source 1.

[0040] ​The above structure of the vacuum evaporation device of the embodiment is provided, the glass substrate 11 moves at a uniform speed along the transmission direction, under the action of the heater, the evaporation of the evaporation material in the chamber 5, the evaporation material molecules move at a fixed speed at the same temperature, the inert gas molecules are added to the chamber 5, the collision times of the evaporation material molecules are increased, that is, the time of the evaporation material molecules deposited on the glass substrate 11 is increased, so that the evaporation film thickness can be reduced, because in the vacuum evaporation, the evaporation process of the evaporation material is a typical evaporation phenomenon. At a certain temperature, the pressure of the evaporation material vapor in the equilibrium process of solid or liquid is called the saturation vapor pressure at the temperature, and the evaporation process can only occur at the saturation vapor pressure.

[0041] The saturation vapor pressure is positively correlated with the temperature change, that is, the saturation vapor pressure increases rapidly with the increase of the temperature. The evaporation process in vacuum occurs more easily than in atmospheric pressure, and the evaporation temperature is lower than in atmospheric pressure. Generally, in vacuum evaporation, as long as the evaporation material (metal or its compound) can be heated to a saturation vapor pressure of 1 Pa or more, the metal or its compound can be rapidly evaporated, and the number of molecules evaporated from the surface per unit time per unit area is related to the evaporation temperature as follows:

[0042]

[0043] In the above formula, av represents the evaporation coefficient, which is generally considered to be closely related to the cleaning condition of the evaporation surface; Peq is the saturation vapor pressure of the evaporation material at the temperature; p is the partial pressure of the evaporation material in the current environment; M represents the molecular weight of the evaporation material; NA and KB are Avogadro's constant and Boltzmann's constant respectively.

[0044] According to Dalton's law of partial pressure, in a gas mixture in any container, if there is no chemical reaction between the components, each gas is uniformly distributed in the whole container, and the pressure generated is the same as that when it occupies the whole container alone; the partial pressure p of a certain gas in a gas mixture is equal to the pressure generated when it occupies the whole container alone at the same temperature; and the total pressure of the gas mixture is equal to the sum of the partial pressures of each gas, and in a high vacuum environment, it can be considered that there is no partial pressure.

[0045] For a gas, at a certain time, the speed of a certain specific molecule is unpredictable, and the direction of motion is also random. However, under certain macroscopic conditions, for a large number of gas molecules, their speed distribution follows certain statistical laws. According to the Maxwell-Boltzmann speed distribution law, if in N gas molecules, the number of molecules with a speed between v→v+dv is dN, then:

[0046]

[0047] In the above formula: F(v) is the Maxwell velocity distribution function, T is the temperature, and m0 is the molecular mass. As can be seen from the above formula, the velocity distribution function is related to the temperature and the type of gas. When the temperature increases, the proportion of molecules with high speed increases; the probability of a gas with heavy molecular mass at low speed is large, while the probability of a light molecule at high speed is large. When the temperature is constant, the speed of molecular thermal motion also remains unchanged.

[0048] However, in fact, the movement path of a gas molecule is composed of many broken lines after many molecular collisions. The collision between molecules is a random process, so the difference in free path is large, but the statistical average of a large number of free paths is certain, which is called the average free path of gas thermal motion:

[0049]

[0050] In the above formula: d is the effective diameter of the gas molecule, with a unit of m; n is the number of molecules per unit volume.

[0051] Therefore, by increasing the inert gas, the number of inert gas molecules per unit volume is increased, thereby changing the average free path of the thermal motion of the evaporation material gas, and further reducing the evaporation rate.

[0052] Taking the data of different proportions of three thicknesses of evaporation material A X1, X2, X3 and three thicknesses of evaporation material B Y1, Y2, Y3 as an example, the working principle of the vacuum evaporation equipment of the embodiment is described.

[0053] Two adjacent linear sources 1 are selected, and the remaining linear sources 1 are sealed using a cover plate 9. The two linear sources 1 are defined as linear source M and linear source N. As shown in Figure 4 Two partitions 4 are inserted into the linear source M and the linear source N, so as to divide the linear source M and the linear source N into three chambers 5. Evaporation material A is placed in the three chambers 5 of the linear source M, and evaporation material B is placed in the three chambers 5 of the linear source N; as shown in Figure 5As shown, the mask plate 2 is used, each hollow area has 3 openings 7. During evaporation, the glass substrate 11 is moved from the line source M to the line source N by the moving part, when the first row of evaporation area of the glass substrate 11 moves above the line source M, the evaporation material A in the line source M evaporates and reaches the first row of evaporation area of the glass substrate 11 through the three openings 7 of the hollow area corresponding to the line source M, by adjusting the inert gas flow of the three chambers 5 of the line source M, the evaporation material A with thickness X1, X2, X3 is evaporated on the first row of evaporation area of the glass substrate 11; The glass substrate 11 continues to advance, when the first row of evaporation area of the glass substrate 11 moves above the line source N and the second row of evaporation area moves above the line source M, the evaporation material B in the line source N evaporates and reaches the first row of evaporation area of the glass substrate 11 through the three openings 7 of the hollow area corresponding to the line source N, the evaporation material A in the line source M evaporates and reaches the second row of evaporation area of the glass substrate 11 through the three openings 7 of the hollow area corresponding to the line source M, by adjusting the inert gas flow of each chamber 5 of the line source M and the line source N, the evaporation material B with thickness Y1, Y2, Y3 is evaporated on the first row of evaporation area of the glass substrate 11, and the evaporation material A with thickness X2, X3, X1 is evaporated on the first row of evaporation area of the glass substrate 11; Repeat the above process, as shown in the figure, Figure 6 Finally, X1Y1, X2Y2, X3Y3 three kinds of evaporation data are evaporated on the first row of evaporation area of the glass substrate 11, X2Y1, X3Y2, X1Y3 three kinds of evaporation data are evaporated on the second row of evaporation area, and X3Y1, X1Y2, X2Y3 three kinds of evaporation data are evaporated on the third row of evaporation area. The speed regulating valve is used to adjust the amount of inert gas to realize the adjustment of the evaporation thickness of the material and reduce the consumption of the evaporation material, and the data collection of different proportions of multiple products is realized in one evaporation.

[0054] Example 2

[0055] The embodiment provides a kind of multiple product perovskite film layer vacuum evaporation equipment, which is different from the embodiment 1, as shown in Figure 7 A plurality of cavities 13 are arranged at the bottom of the evaporation chamber 10 and communicated with the evaporation chamber 10, and a plurality of line sources 1 are arranged in the plurality of cavities 13, respectively.

[0056] The working principle of the vacuum evaporation equipment of the embodiment is described by taking the collection of different proportion data of X1, X2, X3 three thicknesses of evaporation material A and Y1, Y2, Y3 three thicknesses of evaporation material B as an example.

[0057] Two of the line sources 1 are selected, and the rest of the line sources 1 are sealed by the cover plate 9. The two line sources 1 are defined as line source M and line source N. Two partitions 4 are inserted into the line source M and the line source N to divide the line source M and the line source N into three chambers 5. The evaporation material A is placed in the three chambers 5 of the line source M, and the evaporation material B is placed in the three chambers 5 of the line source N. The mask plate 2 with three openings 7 in each hollow area is used.When evaporating, the glass substrate 11 moves on the guide rail from the line source M to the direction of the line source N, when the first row of evaporation areas of the glass substrate 11 moves to the evaporation area of the evaporation material A, the vapor of the evaporation material A reaches the first row of evaporation areas of the glass substrate 11 through the three openings 7 of the first row of mask plates, and the inert gas flow of the three chambers 5 of the line source M is adjusted to evaporate the evaporation material A with thicknesses X1, X2 and X3 in the first row of evaporation areas of the glass substrate 11 in turn; the glass substrate 11 continues to advance, when the second row of evaporation areas of the glass substrate 11 moves to the evaporation area of the evaporation material A, the vapor of the evaporation material A reaches the second row of evaporation areas of the glass substrate 11 through the three openings 7 of the second row of mask plates, and the inert gas flow of the three chambers 5 of the line source M is adjusted to evaporate the evaporation material A with thicknesses X2, X3 and X1 in the second row of evaporation areas of the glass substrate 11 in turn; the glass substrate 11 continues to advance, when the third row of evaporation areas of the glass substrate 11 moves to the evaporation area of the evaporation material A, the vapor of the evaporation material A reaches the third row of evaporation areas of the glass substrate 11 through the three openings 7 of the third row of mask plates, and the inert gas flow of the three chambers 5 of the line source M is adjusted to evaporate the evaporation material A with thicknesses X3, X1 and X2 in the third row of evaporation areas of the glass substrate 11 in turn; the glass substrate 11 continues to advance, when the first row of evaporation areas of the glass substrate 11 moves to the evaporation area of the evaporation material B, the vapor of the evaporation material B reaches the first row of evaporation areas of the glass substrate 11 through the three openings 7 of the first row of mask plates, and the inert gas flow of the three chambers 5 of the line source N is adjusted to evaporate the evaporation material B with thicknesses Y1, Y2 and Y3 in the first row of evaporation areas of the glass substrate 11 in turn; the glass substrate 11 continues to advance, when the second row of evaporation areas of the glass substrate 11 moves to the evaporation area of the evaporation material B, the vapor of the evaporation material B reaches the second row of evaporation areas of the glass substrate 11 through the three openings 7 of the second row of mask plates, and the inert gas flow of the three chambers 5 of the line source N is adjusted to evaporate the evaporation material B with thicknesses Y2, Y3 and Y1 in the second row of evaporation areas of the glass substrate 11 in turn; the glass substrate 11 continues to advance, when the third row of evaporation areas of the glass substrate 11 moves to the evaporation area of the evaporation material B, the vapor of the evaporation material B reaches the third row of evaporation areas of the glass substrate 11 through the three openings 7 of the third row of mask plates, and the inert gas flow of the three chambers 5 of the line source N is adjusted to evaporate the evaporation material B with thicknesses Y3, Y1 and Y2 in the third row of evaporation areas of the glass substrate 11 in turn; as shown in the figure, finally, X1Y1, X2Y2 and X3Y3 three kinds of evaporation data are evaporated in the first row of evaporation areas of the glass substrate 11, X2Y1, X3Y2 and X1Y3 three kinds of evaporation data are evaporated in the second row of evaporation areas, and X3Y1, X1Y2 and X2Y3 three kinds of evaporation data are evaporated in the third row of evaporation areas. Figure 6 ​

[0058] The technical features of the above-described embodiments can be combined in any manner. For the sake of brevity, not all possible combinations of the technical features are described, but it is understood that the scope of the present specification includes all possible combinations.

[0059] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be pointed out that, for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A multi-product perovskite film vacuum evaporation equipment, comprising an evaporation chamber (10) and a line source (1) and a mask plate (2) disposed within the evaporation chamber (10), characterized in that, Multiple wire sources (1) are provided and multiple wire sources (1) are arranged side by side at intervals at the bottom of the vapor deposition chamber (10). A baffle (3) is provided between any two adjacent wire sources (1). Several partitions (4) are provided in each wire source (1) and the height of the partitions (4) is higher than the height of the wire source (1) so as to form multiple spaced chambers (5) for placing vapor deposition materials in the wire source (1). Each chamber (5) is provided with an air inlet (6) for introducing inert gas. The mask plate (2) is provided with multiple hollow areas at intervals, and each of the hollow areas is respectively provided with multiple line sources (1). Each hollow area is provided with multiple openings (7) at intervals, and each of the multiple openings (7) of the hollow area is respectively provided with multiple chambers (5) of the corresponding line source (1). The multi-product perovskite film vacuum evaporation equipment also includes an inert gas source, which is connected to multiple air inlets (6) through multiple pipes (8), and each pipe (8) is equipped with an electrically controlled flow valve; each partition (4) is detachably connected to the line source (1); the same evaporation material is placed in each chamber (5) of the same line source (1), and different evaporation materials are placed in the chambers (5) of different line sources (1).

2. The multi-product perovskite film vacuum evaporation equipment according to claim 1, characterized in that, The multi-product perovskite film vacuum evaporation equipment also includes a moving part and a bracket; the moving part is located inside the evaporation chamber (10); the bracket is located above the mask plate (2), the bracket is mounted on the moving part and moved by the moving part, and a glass substrate (11) is adsorbed on the side of the bracket facing the mask plate (2).

3. A multi-product perovskite film vacuum evaporation equipment, comprising an evaporation chamber (10) and a line source (1) and a mask plate (2) disposed within the evaporation chamber (10), characterized in that, The bottom of the vapor deposition chamber (10) is provided with multiple cavities (13) that communicate with it; multiple wire sources (1) are provided and multiple wire sources (1) are respectively provided in multiple cavities (13), and each wire source (1) is provided with several partitions (4) and the height of the partitions (4) is higher than the height of the wire source (1) so as to form multiple cavities (5) for placing vapor deposition materials in the wire source (1) at intervals. Each cavity (5) is provided with an air inlet (6) for introducing inert gas; The mask plate (2) is provided with multiple hollow areas at intervals, and each of the hollow areas is respectively provided with multiple line sources (1). Each hollow area is provided with multiple openings (7) at intervals, and each of the multiple openings (7) of the hollow area is respectively provided with multiple chambers (5) of the corresponding line source (1). The multi-product perovskite film vacuum evaporation equipment also includes an inert gas source, which is connected to multiple air inlets (6) through multiple pipes (8), and each pipe (8) is equipped with an electrically controlled flow valve; each partition (4) is detachably connected to the line source (1); the same evaporation material is placed in each chamber (5) of the same line source (1), and different evaporation materials are placed in the chambers (5) of different line sources (1).

4. The multi-product perovskite film vacuum evaporation equipment according to claim 3, characterized in that, The multi-product perovskite film vacuum evaporation equipment also includes a guide rail, and the mask plate (2) moves along the guide rail in the evaporation chamber.

5. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1-4, characterized in that, The multi-product perovskite film vacuum evaporation equipment also includes multiple cover plates (9), which are detachably connected to the openings (7) of multiple line sources (1).

6. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1-4, characterized in that, The shape of the opening (7) is circular or polygonal.

7. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1-4, characterized in that, The vapor deposition chamber (10) is provided with at least one vent (12).

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