Wafer defect detection light source, wafer defect detection equipment and wafer defect detection method

Abstract

The invention relates to the technical field of light source control, and discloses a wafer defect detection light source, wafer defect detection equipment and a wafer defect detection method.According to the wafer defect detection method, an illumination scheme needed by defect detection is analyzed on the basis of form information, clamping form parameters and illumination condition parameters are obtained, a wafer to be detected is detected, working data are continuously collected, and the detection accuracy is improved. The method comprises the following steps: sensing and dynamically adjusting the clamping form and the illumination condition of a wafer in real time to perform illumination parameter correction analysis to obtain a corrected illumination parameter and a corrected clamping parameter, adjusting a wafer clamping structure to a second clamping form, driving a detection light source according to the corrected illumination parameter, and switching to a second illumination mode. Compared with the prior art, the defect detection precision and efficiency are improved, the detection consistency and reliability are ensured, the detection requirements of different wafer forms are met, and the problems of missing detection and false detection caused by unstable performance due to long-time illumination in the prior art are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of light source control, and in particular to a wafer defect detection light source, equipment and a wafer defect detection method. Background Art

[0002] Wafer defect detection is a key link in the semiconductor manufacturing process and directly affects the quality of the final product. When batch inspection of wafers is carried out, the inspection light source is in long-term lighting work. Due to long-term lighting work, there is a potential risk of unstable performance of the inspection light source, which may lead to missed detections and false detections. Summary of the invention

[0003] The purpose of the present invention is to provide a wafer defect detection light source, equipment and wafer defect detection method, aiming to solve the problem in the prior art that long-term illumination leads to unstable performance, resulting in missed detection and false detection.

[0004] The present invention is implemented in this way. In a first aspect, the present invention provides a wafer defect detection light source, comprising: Curved frame structure, several unit light sources and main control terminal; The curved frame structure is in a curved shape with a certain curvature, and a plurality of mounting parts that are compactly abutted against each other are arranged on the inner side of the concave curved surface of the curved frame structure, and each of the unit light sources is respectively arranged on each of the mounting parts; The main control terminal is electrically connected to each of the unit light sources, and is used to issue control instructions to each of the unit light sources, so as to control the light source irradiation work of each of the unit light sources through the control instructions.

[0005] In a second aspect, the present invention provides a wafer defect detection device, comprising: a wafer defect detection light source, a wafer clamping structure, and a lighting effect sensor module as described in the first aspect.

[0006] In a third aspect, the present invention provides a wafer defect detection method, which is applied to a wafer defect detection light source described in the first aspect, comprising: Performing wafer morphology sensing on a wafer to be tested that is disposed on a wafer clamping structure to obtain wafer morphology information of the wafer to be tested; Analyzing the illumination scheme required for defect detection of the wafer to be tested according to the wafer morphology information to obtain the clamping morphology parameters and illumination condition parameters of the wafer to be tested; Adjusting the clamping shape of the wafer clamping structure according to the clamping shape parameters so that the wafer to be tested is in a first clamping shape corresponding to the clamping shape parameters; According to the illumination condition parameter, a plurality of unit light sources specified in the detection light source are driven to switch the detection light source to a first illumination mode corresponding to the illumination condition parameter; Continuously collecting working data of each unit light source in the detection light source to obtain working monitoring feature distribution of the detection light source, and performing multi-dimensional evaluation on the lighting condition parameter according to the working monitoring feature distribution to obtain an execution priority index of the lighting condition parameter; When the execution priority index does not meet the preset threshold, performing illumination parameter correction analysis on the detection light source according to the work monitoring characteristic distribution to obtain a corrected illumination parameter; Performing a reverse analysis of the wafer clamping morphology of the wafer to be tested according to the corrected illumination parameters to obtain corrected clamping parameters of the wafer to be tested corresponding to the corrected illumination parameters; The wafer clamping structure is adjusted to a clamping shape according to the corrected clamping parameters so that the wafer to be tested is in a second clamping shape, and a number of unit light sources specified in the detection light source are driven according to the corrected illumination parameters so that the detection light source is switched to a second illumination mode to perform illumination detection on the wafer to be tested.

[0007] The present invention provides a wafer defect detection method, which has the following beneficial effects: The present invention analyzes the lighting scheme required for defect detection based on morphological information, obtains clamping morphological parameters and lighting condition parameters, detects the wafer to be tested, continuously collects working data to perform lighting parameter correction analysis, obtains corrected lighting parameters and corrected clamping parameters, adjusts the wafer clamping structure to a second clamping shape, drives the detection light source according to the corrected lighting parameters, and switches to the second lighting mode. This method improves the accuracy and efficiency of defect detection by real-time sensing and dynamically adjusting the clamping shape and lighting conditions of the wafer, ensures the consistency and reliability of detection, adapts to the detection requirements of different wafer shapes, and solves the problem of unstable performance caused by long-term illumination in the prior art, resulting in missed detection and false detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a schematic diagram of the steps of a wafer defect detection method provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0009] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0010] The implementation of the present invention is described in detail below in conjunction with specific embodiments.

[0011] Reference Figure 1 As shown, a preferred embodiment of the present invention is provided.

[0012] In a first aspect, the present invention provides a wafer defect detection method, comprising: S1: performing wafer morphology sensing on a wafer to be tested that is disposed on a wafer clamping structure to obtain wafer morphology information of the wafer to be tested; S2: Analyzing the illumination scheme required for defect detection of the wafer to be tested according to the wafer morphology information to obtain the clamping morphology parameters and illumination condition parameters of the wafer to be tested; S3: adjusting the clamping shape of the wafer clamping structure according to the clamping shape parameters, so that the wafer to be tested is in a first clamping shape corresponding to the clamping shape parameters; S4: driving a plurality of unit light sources specified in the detection light source according to the illumination condition parameter, so that the detection light source switches to a first illumination mode corresponding to the illumination condition parameter; S5: continuously collecting working data of each unit light source in the detection light source to obtain working monitoring feature distribution of the detection light source, and performing multi-dimensional evaluation on the lighting condition parameter according to the working monitoring feature distribution to obtain an execution priority index of the lighting condition parameter; S6: When the execution priority index does not meet the preset threshold, performing illumination parameter correction analysis on the detection light source according to the work monitoring characteristic distribution to obtain a corrected illumination parameter; S7: performing reverse analysis of the wafer clamping morphology of the wafer to be tested according to the corrected illumination parameters to obtain corrected clamping parameters of the wafer to be tested corresponding to the corrected illumination parameters; S8: Adjust the clamping shape of the wafer clamping structure according to the corrected clamping parameters so that the wafer to be tested is in a second clamping shape, and drive several unit light sources specified in the detection light source according to the corrected lighting parameters so that the detection light source switches to the second lighting mode to perform lighting detection on the wafer to be tested.

[0013] Specifically, in step S1 of the embodiment provided by the present invention, wafer morphology sensing is performed on the wafer to be tested set on the wafer clamping structure to obtain wafer morphology information of the wafer to be tested. The wafer morphology information is used to describe the size specifications of the wafer to be tested. Wafers of different size specifications have different lighting detection schemes.

[0014] More specifically, the technical solution provided by the present invention involves controlling the orientation and angle of the wafer to be tested so that the wafer to be tested can better receive light detection. Therefore, the wafer to be tested needs to be clamped by a wafer clamping structure.

[0015] Specifically, in step S2 of the embodiment provided by the present invention, the illumination scheme required for defect detection of the wafer to be tested is analyzed according to the wafer morphology information to obtain the clamping morphology parameters and illumination condition parameters of the wafer to be tested.

[0016] More specifically, the clamping shape parameter is the control of the specific orientation and inclination angle of the wafer to be tested by the wafer clamping structure, and the lighting condition parameter is the specific detection light source applied by the detection light source to the wafer to be tested. The detection light source adopted in the present invention is a detection light source composed of a plurality of unit light sources arranged closely, and the main frame of the detection light source is in a curved form, that is, each unit light source is arranged and covered above the wafer to be tested when curved, so as to realize all-round detection light source irradiation of the wafer to be tested.

[0017] More specifically, the wafer clamping structure can control the specific setting position and tilt angle of the wafer to be tested, so that there is an arbitrary receiving relationship between the wafer to be tested and the detection light source. By adjusting this receiving relationship, the effect of the detection light source can be effectively adjusted.

[0018] It can be understood that by controlling the clamping shape parameters and the lighting condition parameters, the wafer to be tested can be tested under the best light source irradiation and receiving shape to obtain the best detection effect.

[0019] Specifically, in steps S3 and S4 of the embodiment provided by the present invention, the clamping shape of the wafer clamping structure is adjusted according to the clamping shape parameters so that the wafer to be tested is in a first clamping shape corresponding to the clamping shape parameters; and several unit light sources specified in the detection light source are driven according to the lighting condition parameters so that the detection light source is switched to the first lighting mode corresponding to the lighting condition parameters.

[0020] More specifically, the clamping shape parameters are a description of the optimal receiving shape of the wafer to be tested, and are also control instructions for the wafer clamping structure. By controlling the wafer clamping structure, the wafer to be tested is placed in a clamping state that meets the clamping shape parameters. The same applies to the lighting condition parameters.

[0021] Specifically, in step S5 of the embodiment provided by the present invention, continuous working data collection is performed on each unit light source in the detection light source to obtain the working monitoring feature distribution of the detection light source, and the lighting condition parameters are evaluated in multiple dimensions based on the working monitoring feature distribution to obtain the execution priority index of the lighting condition parameters.

[0022] It should be noted that the detection light source includes several closely arranged unit light sources. When the detection light source is irradiated on the wafer to be tested, some of them are in working state and the other part is in resting state, and the work intensity of each unit light source in working state is also different. This makes the performance of the unit light source that works continuously become unstable over time. At this time, the lighting mode can be adjusted to allow the non-working unit light source to take over the work, thereby ensuring stable performance.

[0023] More specifically, in order to determine the timing for alternating the working of the unit light sources, it is necessary to continuously monitor the unit light sources of the detection light source to analyze and obtain the execution priority parameters of the current lighting condition parameters, and based on the judgment of the execution priority parameters, analyze whether the current lighting condition parameters of the detection light source need to be alternated.

[0024] Specifically, in steps S6 and S7 of the embodiment provided by the present invention, when the execution priority index does not meet the preset threshold, the detection light source is subjected to illumination parameter correction analysis according to the working monitoring characteristic distribution to obtain corrected illumination parameters; and the wafer clamping morphology is reversely analyzed for the wafer to be tested according to the corrected illumination to obtain corrected clamping parameters corresponding to the corrected illumination parameters of the wafer to be tested.

[0025] More specifically, when the execution priority index does not meet the preset threshold, the correction analysis of the illumination parameters is performed to obtain the corrected illumination parameters, which may involve the adjustment of the light source position, brightness, etc. By correcting the illumination parameters, it is ensured that the illumination conditions can optimize the detection effect of wafer surface defects. This can avoid missed detection or false detection under unsatisfactory illumination conditions.

[0026] More specifically, based on the revised lighting scheme, the wafer clamping shape is reverse analyzed to obtain the revised clamping parameters. Then, the clamping structure is readjusted to put the wafer in a new clamping shape to adapt to the revised lighting scheme. The clamping shape is optimized through reverse analysis to ensure that the wafer can be best fixed and supported under the new lighting conditions, thereby improving the accuracy of detection.

[0027] Specifically, in step S8 of the embodiment provided by the present invention, the clamping shape of the wafer clamping structure is adjusted according to the corrected clamping parameters so that the wafer to be tested is in a second clamping shape, and several unit light sources specified in the detection light source are driven according to the corrected illumination parameters so that the detection light source is switched to the second illumination mode to perform illumination detection on the wafer to be tested.

[0028] It can be understood that the final defect detection is carried out under the corrected lighting and clamping configuration. At this time, the lighting conditions and clamping configuration have been optimized, and the surface defects of the wafer can be detected more accurately. Through the optimized clamping configuration and lighting conditions, the sensitivity and accuracy of defect detection are improved, and false detections and missed detections are reduced, ensuring comprehensive detection of wafer surface defects.

[0029] The present invention provides a wafer defect detection light source, which has the following beneficial effects: The present invention analyzes the lighting scheme required for defect detection based on morphological information, obtains clamping morphological parameters and lighting condition parameters, detects the wafer to be tested, continuously collects working data to perform lighting parameter correction analysis, obtains corrected lighting parameters and corrected clamping parameters, adjusts the wafer clamping structure to a second clamping shape, drives the detection light source according to the corrected lighting parameters, and switches to the second lighting mode. This method improves the accuracy and efficiency of defect detection by real-time sensing and dynamically adjusting the clamping shape and lighting conditions of the wafer, ensures the consistency and reliability of detection, adapts to the detection requirements of different wafer shapes, and solves the problem of unstable performance caused by long-term illumination in the prior art, resulting in missed detection and false detection.

[0030] Preferably, the step of performing wafer morphology sensing on a wafer to be tested disposed on a wafer clamping structure to obtain wafer morphology information of the wafer to be tested includes: S11: when a preset sensing module detects that the wafer to be tested is placed in an initial position, driving the wafer clamping structure to perform a test clamping operation toward the wafer to be tested; wherein the sensing module is a pressure sensor, a visual sensor or a photoelectric sensor; S12: monitoring the force characteristics of the wafer clamping structure in real time, and controlling the position parameters and force parameters of the clamping operation of the wafer clamping structure according to the force characteristics monitored in real time, until the force characteristics monitored in real time meet the expected clamping standards; S13: taking the position parameters and force parameters of the wafer clamping structure corresponding to the real-time monitored force characteristics that meet the expected clamping standard as wafer morphological characteristics, and performing wafer size specification and wafer thickness specification calculation processing on the wafer to be tested based on the wafer morphological characteristics to obtain size specification data and thickness specification data of the wafer to be tested; S14: Combining the size specification data and thickness specification data of the wafer to be tested to obtain wafer morphology information of the wafer to be tested.

[0031] Specifically, a preset sensing module (such as a pressure sensor, a visual sensor or a photoelectric sensor) is used to detect whether the wafer to be tested has been placed in the initial position. The sensing module is responsible for sensing the position of the wafer and ensuring that the wafer is in the correct initial placement position. The selection of the sensing module is based on different detection requirements: the pressure sensor can monitor whether the wafer is in contact with the clamping structure; the visual sensor or the photoelectric sensor is used to confirm the precise position of the wafer.

[0032] More specifically, once it is detected that the wafer has been placed in the initial position, the wafer clamping structure is driven toward the wafer to perform a trial clamping operation. At this time, the clamping structure will perform a preliminary clamping action but will not apply excessive force to the wafer. The purpose of the trial clamping is to ensure that the clamping structure can properly contact and fix the wafer for subsequent precise clamping adjustments.

[0033] More specifically, during the trial clamping process, the force applied to the wafer clamping structure is monitored in real time through the sensor module, and the force data during the clamping process is collected. These data may include information such as pressure, displacement, torque, etc., which can reflect the force characteristics during the clamping process. The force characteristics fed back by the sensor help the system to understand in real time whether the contact between the clamping structure and the wafer is as expected.

[0034] More specifically, based on the force characteristics monitored in real time, the system dynamically adjusts the clamping position and force of the wafer clamping structure until the expected clamping standard is reached. The adjusted parameters include the moving position of the clamping structure and the applied force. The purpose is to ensure that the wafer is firmly fixed without being subjected to excessive pressure or deviating from its original position.

[0035] More specifically, the preset clamping standards include the force tolerance range of the wafer. Excessive pressure may cause the wafer to deform or be damaged, while too little pressure may cause the wafer to not be firmly fixed. The system continuously adjusts until the force characteristics monitored in real time meet these standards.

[0036] More specifically, when the force characteristics of the clamping structure meet the expected standards, the system records the current clamping position parameters and force parameters, which reflect the morphological characteristics of the wafer during the clamping process. The position parameters may include the specific coordinates and angles of the clamp, and the force parameters include the amount of force applied to the wafer.

[0037] More specifically, based on the recorded force characteristics and position parameters of the clamping structure, combined with physical models and geometric calculations, the system further calculates the size specifications (such as diameter) and thickness specifications of the wafer. This calculation usually relies on the contact mechanics relationship between the wafer and the clamping structure. For example, there is a certain correlation between the clamping force and the thickness or shape of the wafer. By measuring the force data during clamping, the actual thickness and size of the wafer can be calculated.

[0038] More specifically, the inferred wafer size specification data and thickness specification data are combined to form complete wafer morphology information, which provides a basis for subsequent defect detection, automated control and wafer analysis. For example, data such as the wafer's diameter, thickness, and surface morphology will help the system accurately identify the wafer's geometric characteristics and prepare for subsequent inspection, classification and processing.

[0039] It can be understood that by real-time monitoring of the force characteristics of the clamping structure, the clamping position and force can be accurately controlled to avoid deformation or loosening of the wafer due to improper clamping, ensuring that the wafer is in a stable and precise clamping state. This method can automatically obtain the size and thickness specifications of the wafer by real-time monitoring and calculation of the mechanical parameters during the wafer clamping process, reducing manual measurement errors and improving detection efficiency and accuracy. Different wafers may have differences in shape, size and thickness. Through precise clamping and mechanical analysis, it can adapt to wafers of different specifications, ensuring that both small and large wafers can be accurately sized and clamped.

[0040] Preferably, the step of analyzing the illumination scheme required for defect detection of the wafer to be tested according to the wafer morphology information to obtain the clamping morphology parameters and illumination condition parameters of the wafer to be tested includes: S21: Substituting the wafer morphology information into a pre-constructed wafer digital simulation model, so that the basic version of the wafer digital simulation model adjusts the model parameters according to the wafer morphology information, so as to obtain a wafer digital simulation model of a to-be-tested version corresponding to the wafer morphology information; S22: combining the preset light source digital simulation model with the wafer digital simulation model to be tested to obtain a lighting effect calculation model; S23: simulating the configuration of working parameters of the wafer clamping structure and the detection light source based on the illumination effect calculation model, and performing illumination effect calculation processing on the simulated configured working parameters according to the illumination effect calculation model to obtain simulation effect characteristics corresponding to the working parameters; S24: performing effect feedback and parameter optimization on the working parameters according to the simulation effect characteristics, so as to obtain the working parameters with the most optimized simulation effect characteristics; S25: Perform instruction conversion processing on the working parameters to execute the device to obtain the clamping shape parameters and lighting condition parameters of the wafer to be tested; wherein the clamping shape parameters are used to control the wafer clamping structure to clamp the wafer to be tested, and the lighting condition parameters are used to control the detection light source to illuminate the wafer to be tested.

[0041] Specifically, based on the wafer morphology information (such as size specifications, thickness, surface condition, etc.) obtained in the previous step, this information is input into a pre-built wafer digital simulation model. This model is usually constructed based on physical and geometric principles and is intended to simulate the actual performance of wafers in different morphologies. The input of wafer morphology information will trigger the adjustment of model parameters, so that the basic version of the wafer digital simulation model is modified accordingly according to the actual wafer characteristics, thereby obtaining the wafer digital simulation model of the version to be tested. This adjustment can simulate the geometric characteristics of the wafer in different morphologies, which is convenient for subsequent analysis of the lighting scheme for defect detection.

[0042] More specifically, the preset digital simulation model of the light source is combined with the digital simulation model of the wafer to be tested. The light source model is usually constructed based on the specification parameters of the detection light source, and is used to feedback the lighting scheme and its effect that the detection light source can apply to the wafer to be tested. Through this combination, a new lighting effect calculation model is generated. The model can simulate the lighting effect after the interaction between the wafer and the light source, for example, simulating the reflection, refraction, scattering and other phenomena of light on the surface of the wafer, or how the light is irradiated to different parts of the wafer, affecting the visibility of defects.

[0043] More specifically, based on the illumination effect calculation model, the working parameters of the clamping structure and the light source are configured. The working parameters include: clamping shape parameters: such as clamping force, clamping angle, clamping position, etc., which control how the wafer clamping structure stably and evenly clamps the wafer; illumination condition parameters: such as the position of the light source, illumination angle, light intensity, light source type, wavelength, etc., which control how the light source irradiates the wafer surface and affect the illumination effect.

[0044] More specifically, the illumination effect calculation is performed on the configured working parameters. When the light source is irradiated to the surface of the wafer to be tested, the light intensity distribution, shadows, bright spots and other characteristics after reflection or refraction, as well as the influence of the wafer surface characteristics on illumination, are simulated. The calculation results can provide a basis for whether defects are visible under different illumination conditions and the display effect of the wafer surface status.

[0045] More specifically, based on the calculated simulation effect characteristics (such as visibility of defects under lighting, surface reflectivity, lighting uniformity, etc.), the working parameters are fed back and optimized. For example, if certain defects are not clear under lighting conditions, the light source angle or intensity needs to be adjusted; if the clamping shape is unstable, the clamping force or position needs to be adjusted. By continuously optimizing the working parameters, the most optimized simulation effect characteristics are found to ensure that the best defect detection effect can be obtained during the actual inspection process.

[0046] More specifically, the optimized working parameters (clamping shape parameters and lighting condition parameters) are processed by command conversion, and these parameters are converted into control instructions for specific execution devices (such as clamps, light sources, cameras, etc.). After the command conversion, the system can apply these optimized parameters to actual hardware devices and perform corresponding control operations. The clamping shape parameters are used to control the wafer clamping structure to ensure that the wafer is stably and accurately clamped during the inspection process. The lighting condition parameters are used to control the inspection light source to ensure that the wafer surface can achieve the best defect visibility under lighting conditions, enhance the lighting effect, and improve the accuracy of inspection.

[0047] Preferably, the first clamping state of the wafer to be tested includes the basic positioning and inclination angle of the wafer to be tested, and the first illumination mode includes the light source illumination, spectral intensity and illumination frequency of several unit light sources specified in the detection light source.

[0048] Specifically, the detection light source received by the wafer to be tested determines the light detection effect. The first clamping form and the first illumination mode jointly determine the detection light source received by the wafer to be tested. Among them, the first clamping form affects the receiving position and state of the wafer to be tested, including the basic positioning and inclination angle. The first illumination mode includes the light source illumination, spectral intensity and illumination frequency of several unit light sources specified in the measurement light source.

[0049] It is understandable that when the detection light source is used to inspect the wafers to be tested, it is often inspected in batches. Therefore, when the detection light source maintains the same lighting mode for a long time, there is a potential risk of instability in the performance of the detection light source, which may lead to missed detection or false detection of wafer defects. Therefore, the detection light source needs to be monitored and adjusted.

[0050] Preferably, the step of continuously collecting working data of each unit light source in the detection light source to obtain the working monitoring characteristic distribution of the detection light source includes: S51: continuously collecting and analyzing the characteristics of the command signal of the detection light source driving each unit light source through an electrical signal sensor electrically connected to the detection light source, so as to obtain the driving stability characteristics of each unit light source in the detection light source, and the driving stability characteristics of each unit light source together constitute the driving stability characteristic distribution of the detection light source; S52: continuously collecting and analyzing the characteristics of the optical signal of the detection light source in the first illumination mode through a pre-set optical signal sensor to obtain the overall illumination effect of the detection light source on the wafer to be tested, and tracing the overall illumination effect to obtain the illumination effect characteristics of each unit light source in the detection light source, and the illumination effect characteristics of each unit light source together constitute the illumination effect characteristic distribution of the detection light source; S53: assigning basic monitoring features to each unit light source of the detection light source according to the pre-collected unit light source working characteristic time curve, so as to obtain the basic monitoring features of each unit light source of the detection light source corresponding to the current moment, and the basic monitoring features of each unit light source together constitute the basic monitoring feature distribution of the detection light source; S54: Comprehensively analyzing the basic monitoring feature distribution, the driving stability feature distribution, and the lighting effect feature distribution to obtain the working monitoring feature distribution of the detection light source.

[0051] Specifically, an electrical signal sensor electrically connected to the detection light source continuously collects command signals for driving each unit light source. These command signals generally include driving current, voltage, frequency, etc., and are used to control the working state of the light source.

[0052] More specifically, the collected command signals are feature analyzed to evaluate the driving stability of each unit light source. For example, it can be detected whether the light source is overheated, overloaded or fluctuating, whether there is an unstable working mode, or whether there is a timing inconsistency.

[0053] More specifically, after analyzing the driving stability characteristics of each unit light source, a stable characteristic distribution is formed, which shows the driving stability level of each unit light source. This distribution reflects the electrical stability of the light source during long-term operation.

[0054] More specifically, in the first illumination mode, the illumination signal from the light source is continuously collected through a pre-set optical signal sensor. The illumination mode refers to different operating states of the light source, such as different light intensities, wavelengths or illumination angles. The collected illumination signals are feature analyzed to evaluate the illumination effect of the light source irradiating the wafer to be tested, including light intensity distribution, spot shape, uniformity, contrast and other aspects.

[0055] More specifically, the collected overall lighting effect is traced back and analyzed to determine the contribution of each unit light source to the overall lighting effect. For example, some unit light sources exhibit higher light intensity, while other parts are attenuated or uneven.

[0056] More specifically, the lighting effect characteristics of each unit light source are integrated to form a lighting effect characteristic distribution of the light source, which reflects the contribution of each unit light source to the lighting effect of the wafer under different working modes.

[0057] More specifically, the working characteristics of each unit light source are collected in time series, focusing on how the stability of the light source changes over time, including the response curve of each unit light source during startup, operation and shutdown, reflecting the changes in light intensity, response time, stability and other characteristics of each unit light source during its working cycle.

[0058] More specifically, basic monitoring characteristics are assigned to each unit light source based on the collected time curve. For example, each unit light source can be assigned a stability score, or the range of variation of its working characteristics can be marked. Combined with the basic monitoring characteristics of each unit light source, a basic monitoring characteristic distribution is generated to show the basic characteristics of each unit light source under different working conditions, such as stability and reliability.

[0059] More specifically, the results of the above collection and analysis (basic monitoring feature distribution, driving stability feature distribution, lighting effect feature distribution) are comprehensively analyzed. This analysis will reveal the overall performance of the light source under different working conditions, as well as the interaction between each unit light source in actual work. Through comprehensive analysis, the working monitoring feature distribution of the detection light source is obtained. This distribution can reflect the overall stability, lighting effect and time stability of the entire light source system during operation, and help identify potential faults or unstable factors.

[0060] Preferably, the step of performing a multi-dimensional evaluation on the lighting condition parameter according to the work monitoring characteristic distribution to obtain an execution priority index of the lighting condition parameter comprises: S55: Analyzing the detection effectiveness of the illumination condition parameter according to the work monitoring characteristic distribution to obtain a detection effectiveness index corresponding to the illumination condition parameter; S56: Analyzing the detection stability of the illumination condition parameter according to the work monitoring characteristic distribution to obtain a detection stability index corresponding to the illumination condition parameter; S57: Perform a weighted analysis on the detection validity index and the detection stability index to obtain an execution priority index of the lighting condition parameter.

[0061] Specifically, based on the obtained working monitoring feature distribution, the working characteristics of the light source under each lighting condition are evaluated, including the stability of the light source, the lighting effect, and the degree of matching with the object to be measured.

[0062] More specifically, the illumination condition parameters are analyzed for detection effectiveness. Specifically, this analysis determines whether the light source under each illumination condition can effectively perform the target detection task by evaluating the degree of impact of each illumination condition on the target wafer (such as illumination intensity, uniformity, attenuation, etc.).

[0063] More specifically, the effectiveness of detection is evaluated based on the performance of the light source (such as whether it can illuminate clearly, whether there is light spot distortion, and whether it causes unnecessary reflections or shadows). For effective lighting conditions, the evaluation index is higher; for ineffective lighting conditions, the evaluation index is lower. The effectiveness analysis results are quantified into a detection effectiveness index, which indicates the effectiveness of the lighting condition in a specific task. The higher the index is, the more effective the lighting condition is in detecting the target.

[0064] More specifically, similarly, based on the distribution of working monitoring characteristics, the stability performance under each lighting condition is analyzed, which includes the working stability of each unit light source in different time periods, whether there are brightness fluctuations, light source attenuation, working inconsistency and other phenomena.

[0065] More specifically, the stability analysis of the lighting conditions is concerned with whether the light source can maintain a stable light output during continuous operation. This analysis evaluates the reliability of the lighting conditions at different times and whether it can stably provide the predetermined light intensity and uniformity. Lighting conditions with poor stability may lead to reduced detection accuracy or inconsistent performance during multiple tests. Based on the results of the stability analysis, the detection stability index is calculated to indicate the ability of the lighting conditions to maintain a stable state in actual work. The higher the stability index, the more reliable the lighting conditions are in long-term or multiple working processes.

[0066] More specifically, the detection effectiveness index and the detection stability index are combined to obtain a comprehensive evaluation index, namely the execution priority index, through weighted analysis. The weighted method can set different weights according to task requirements. For example, some applications may pay more attention to detection stability, while other applications may pay more attention to detection effectiveness.

[0067] More specifically, the weighted result is the execution priority index, which measures the overall performance of the lighting condition. The higher the execution priority index, the higher the execution priority of the lighting condition in the specific task, and this lighting condition should be used first.

[0068] It can be understood that by taking into account the two key indicators of effectiveness and stability, the performance of the lighting conditions can be comprehensively evaluated. The execution priority index obtained provides a quantitative method to compare the priority of different lighting condition parameters. By analyzing this index, the lighting configuration can be optimized and the lighting conditions that are most suitable for the current detection task can be selected, thereby improving the overall detection effect of the light source.

[0069] Preferably, the step of performing illumination parameter correction analysis on the detection light source according to the work monitoring characteristic distribution to obtain the corrected illumination parameters includes: S61: assigning subsequent detection priority weights to each unit light source in the detection light source according to the distribution of the work monitoring characteristics, so as to obtain the subsequent detection priority weights of each unit light source in the detection light source; wherein the subsequent detection priority weights include a first priority weight, a second priority weight and a third priority weight, the first priority weight corresponds to the unit light source that has not participated in the lighting work in the past time period, the second priority weight corresponds to the unit light source whose work monitoring characteristics meet the expected standards in the past time period, and the third priority weight corresponds to the unit light source whose work monitoring characteristics do not meet the expected standards in the past time period; S62: According to the subsequent detection priority weight of each unit light source in the detection light source, the detection light source is divided into priority blocks to obtain a plurality of priority blocks in the detection light source; wherein each priority block has a corresponding priority mark, and the priority block includes a plurality of adjacently arranged unit light sources, and each priority block is in a state of overlapping and containing each other; S63: performing a shift matching process of the illumination condition parameters on each priority block in turn according to the priority mark, so as to obtain a priority block that can achieve the same detection effect as the illumination condition parameters and working parameters of each unit light source in the priority block; S64: Combining the working parameters of each unit light source in the priority block to obtain a corrected lighting parameter.

[0070] Specifically, according to the distribution of work monitoring characteristics, the performance of each unit light source in the past time period is evaluated, and each unit light source is assigned a subsequent detection priority weight. There are three types of weight classifications: the first priority weight: corresponds to the unit light sources that have not participated in the lighting work in the past time period. These light sources did not participate in the lighting, which means that these unit light sources have the highest priority to participate in the new lighting work. The second priority weight: corresponds to the unit light sources whose work monitoring characteristics in the past time period meet the expected standards. Such light sources have performed well in past detections, indicating that their work is stable. The third priority weight: corresponds to the unit light sources whose work monitoring characteristics in the past time period do not meet the expected standards. Usually, these light sources have certain problems, such as unstable brightness or too fast attenuation. Their priority should be lowered, and their recovery should be focused on during the correction process. According to the performance of each unit light source, it is classified as the first, second or third priority weight, which serves as the basis for subsequent correction of lighting parameters.

[0071] More specifically, priority blocks are divided according to the priority weight of each unit light source. Each priority block is composed of several adjacently arranged unit light sources, and there may be overlapping areas between the priority blocks. Each priority block has a clear priority mark. The light sources within the block are considered to have similar importance. Usually, the light sources in the same block have similar correction requirements. The unit light sources in the priority block have similar detection effects when working. The priority blocks overlap and contain each other, which allows different blocks to be alternatingly corrected or dynamically adjusted as needed.

[0072] More specifically, the lighting condition parameters of each priority block are shifted and matched in turn. That is, by adjusting the lighting parameters of different blocks to meet the expected detection effect, the purpose of shifting and matching is to ensure that each priority block can maintain consistent lighting effects in different working environments. For example, the brightness, direction, angle, etc. of the light source of a certain block is adjusted to match other blocks, and the uniformity and stability of the global lighting effect are guaranteed.

[0073] More specifically, ensure that after the lighting parameters of each priority block are adjusted, the detection effect can be the same or close to the original lighting condition parameters. That is, no matter which priority block is responsible for lighting after the adjustment, its lighting effect should be as consistent as possible to avoid the degradation of detection quality due to uneven lighting. After adjusting the parameters of the unit light source in each priority block, record the newly corrected working parameters. These new parameters will serve as the final reference value after the lighting conditions are corrected.

[0074] More specifically, the operating parameters of the unit light sources in each priority block are combined to obtain the final corrected lighting parameters. These parameters include the brightness, angle, attenuation rate, working cycle, etc. of each light source. According to the corrected lighting parameters, the configuration of the entire lighting system is adjusted so that the system can provide the best lighting effects and detection results in new detection tasks.

[0075] It is understandable that, through the division of priority blocks and the shifting and matching of lighting condition parameters, the working parameters of light sources in different areas can be flexibly adjusted to adapt to different detection needs or environmental changes. The system can dynamically adjust the use of each light source according to the priority, thereby improving the stability and adaptability of the overall lighting. By assigning different priority weights to the light sources, the system can reasonably allocate the use of light sources, give priority to mobilizing light sources with good working performance, and repair or delay the use of light sources with poor performance to avoid unnecessary waste of resources. In particular, for light sources that have not been used for a long time or have failed, the system can effectively monitor and make corresponding adjustments to ensure efficient use of resources. The division of priority blocks and the shifting and matching of lighting parameters enable light sources in different areas to work together to ensure uniform lighting effects in the entire lighting area. Through the overlap and coordination between blocks, the lighting transition between light sources is smoother, avoiding local over-brightness or over-darkness, thereby improving the stability of the detection system.

[0076] In a second aspect, the present invention provides a wafer defect detection light source, which is applied to a wafer defect detection method described in any one of the first aspects, comprising: a curved frame structure, a plurality of unit light sources and a main control terminal.

[0077] Specifically, the curved frame structure is in a curved shape with a certain curvature, and a plurality of mounting parts that are compactly abutted against each other are arranged inside the concave curved surface of the curved frame structure, and each unit light source is respectively arranged on each mounting part.

[0078] More specifically, the main control terminal is electrically connected to each unit light source, and is used to issue control instructions to each unit light source to control the light source irradiation work of each unit light source through the control instructions.

[0079] It can be understood that since each unit light source is respectively arranged on the curved frame structure, by controlling the illumination of each unit light source, a specified lighting effect can be applied to the position of the wafer to be tested from any angle in all directions, and this lighting effect can be transferred by adjusting the unit light source, that is, another unit light source takes over the work of the current unit light source to achieve the current lighting effect from another angle.

[0080] In a third aspect, the present invention provides a wafer defect detection device, comprising: a wafer defect detection light source, a wafer clamping structure, and a lighting effect sensor module as described in the second aspect.

[0081] Specifically, the function of the wafer clamping structure is to adjust the specific position and angle of the wafer to be tested. When the wafer defect detection light source uses another unit light source to replace the current unit light source to achieve the current lighting effect from another angle, the wafer clamping structure also needs to make corresponding angle adjustments to the wafer to be tested so that the angle of the lighting effect changes.

[0082] More specifically, the lighting effect sensor module realizes the function of continuously collecting working data of each unit light source in the detection light source to obtain the distribution of working monitoring characteristics of the detection light source.

[0083] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A wafer defect detection light source, characterized in that: include: Curved frame structure, several unit light sources and main control terminal; The curved frame structure is in a curved shape with a certain curvature, and a plurality of mounting parts that are compactly abutted against each other are arranged on the inner side of the concave curved surface of the curved frame structure, and each of the unit light sources is respectively arranged on each of the mounting parts; The main control terminal is electrically connected to each of the unit light sources, and is used to issue control instructions to each of the unit light sources, so as to control the light source irradiation work of each of the unit light sources through the control instructions.

2. A wafer defect detection device, characterized in that: include: A wafer defect detection light source, a wafer clamping structure, and a lighting effect sensor module as described in claim 1.

3. A wafer defect detection method, characterized in that: A wafer defect detection light source as claimed in claim 1, comprising: Performing wafer morphology sensing on a wafer to be tested that is disposed on a wafer clamping structure to obtain wafer morphology information of the wafer to be tested; Analyzing the illumination scheme required for defect detection of the wafer to be tested according to the wafer morphology information to obtain the clamping morphology parameters and illumination condition parameters of the wafer to be tested; Adjusting the clamping shape of the wafer clamping structure according to the clamping shape parameters so that the wafer to be tested is in a first clamping shape corresponding to the clamping shape parameters; According to the illumination condition parameter, a plurality of unit light sources specified in the detection light source are driven to switch the detection light source to a first illumination mode corresponding to the illumination condition parameter; Continuously collecting working data of each unit light source in the detection light source to obtain working monitoring feature distribution of the detection light source, and performing multi-dimensional evaluation on the lighting condition parameter according to the working monitoring feature distribution to obtain an execution priority index of the lighting condition parameter; When the execution priority index does not meet the preset threshold, performing illumination parameter correction analysis on the detection light source according to the work monitoring characteristic distribution to obtain a corrected illumination parameter; Performing a reverse analysis of the wafer clamping morphology of the wafer to be tested according to the corrected illumination parameters to obtain corrected clamping parameters of the wafer to be tested corresponding to the corrected illumination parameters; The wafer clamping structure is adjusted to a clamping shape according to the corrected clamping parameters so that the wafer to be tested is in a second clamping shape, and a number of unit light sources specified in the detection light source are driven according to the corrected illumination parameters so that the detection light source is switched to a second illumination mode to perform illumination detection on the wafer to be tested.

4. The wafer defect detection method according to claim 3, characterized in that: The step of performing wafer morphology sensing on a wafer to be tested disposed on a wafer clamping structure to obtain wafer morphology information of the wafer to be tested includes: When the wafer to be tested is detected to be placed in the initial position through the preset sensor module, the wafer clamping structure is driven to perform a test clamping operation toward the wafer to be tested; wherein the sensor module is a pressure sensor, a visual sensor or a photoelectric sensor; Performing real-time monitoring of the force characteristics of the wafer clamping structure, and controlling the position parameters and force parameters of the clamping operation of the wafer clamping structure according to the real-time monitored force characteristics, until the real-time monitored force characteristics meet the expected clamping standards; The position parameters and force parameters of the wafer clamping structure corresponding to the real-time monitored force characteristics that meet the expected clamping standard are used as wafer morphological characteristics, and the wafer size specifications and wafer thickness specifications of the wafer to be tested are calculated based on the wafer morphological characteristics to obtain the size specification data and thickness specification data of the wafer to be tested; The size specification data and thickness specification data of the wafer to be tested are combined to obtain wafer morphology information of the wafer to be tested.

5. The wafer defect detection method according to claim 3, characterized in that: The step of analyzing the illumination scheme required for defect detection of the wafer to be tested according to the wafer morphology information to obtain the clamping morphology parameters and illumination condition parameters of the wafer to be tested includes: Substituting the wafer morphology information into a pre-built wafer digital simulation model, so that the basic version of the wafer digital simulation model adjusts the model parameters according to the wafer morphology information, so as to obtain a wafer digital simulation model of a to-be-tested version corresponding to the wafer morphology information; Combining the preset light source digital simulation model with the wafer digital simulation model to be tested to obtain a lighting effect calculation model; Based on the illumination effect calculation model, the wafer clamping structure and the detection light source are simulated to configure working parameters, and illumination effect calculation processing is performed on the simulated configured working parameters according to the illumination effect calculation model to obtain simulation effect characteristics corresponding to the working parameters; Performing effect feedback and parameter optimization on the working parameters according to the simulation effect characteristics to obtain the working parameters with the most optimized simulation effect characteristics; The working parameters are processed by executing device command conversion to obtain the clamping shape parameters and lighting condition parameters of the wafer to be tested; wherein the clamping shape parameters are used to control the wafer clamping structure to clamp the wafer to be tested, and the lighting condition parameters are used to control the detection light source to illuminate the wafer to be tested.

6. The wafer defect detection method according to claim 3, characterized in that: The first clamping form of the wafer to be tested includes the basic positioning and inclination angle of the wafer to be tested, and the first illumination mode includes the light source illumination, spectral intensity and illumination frequency of several unit light sources specified in the detection light source.

7. The wafer defect detection method according to claim 3, characterized in that: The step of continuously collecting working data of each unit light source in the detection light source to obtain the working monitoring characteristic distribution of the detection light source includes: The command signal of the detection light source driving each unit light source is continuously collected and feature analyzed by an electrical signal sensor electrically connected to the detection light source, so as to obtain the driving stability feature of each unit light source in the detection light source, and the driving stability features of each unit light source together constitute the driving stability feature distribution of the detection light source; Continuously collect and analyze the characteristics of the optical signal of the detection light source in the first illumination mode through a pre-set optical signal sensor to obtain the overall illumination effect of the detection light source on the wafer to be tested, and perform source tracing analysis on the overall illumination effect to obtain the illumination effect characteristics of each unit light source in the detection light source, and the illumination effect characteristics of each unit light source together constitute the illumination effect characteristic distribution of the detection light source; Assigning basic monitoring features to each unit light source of the detection light source according to the pre-collected unit light source working characteristic time curve to obtain the basic monitoring features of each unit light source of the detection light source corresponding to the current moment, and the basic monitoring features of each unit light source together constitute the basic monitoring feature distribution of the detection light source; The basic monitoring characteristic distribution, the driving stability characteristic distribution and the lighting effect characteristic distribution are comprehensively analyzed to obtain the working monitoring characteristic distribution of the detection light source.

8. The wafer defect detection method according to claim 3, characterized in that: The step of performing a multi-dimensional evaluation on the lighting condition parameter according to the work monitoring feature distribution to obtain an execution priority index of the lighting condition parameter comprises: Analyzing the detection effectiveness of the illumination condition parameter according to the work monitoring characteristic distribution to obtain a detection effectiveness index corresponding to the illumination condition parameter; Analyzing the detection stability of the illumination condition parameter according to the work monitoring characteristic distribution to obtain a detection stability index corresponding to the illumination condition parameter; A weighted analysis is performed on the detection effectiveness index and the detection stability index to obtain an execution priority index of the lighting condition parameter.

9. The wafer defect detection method according to claim 3, characterized in that: The step of performing illumination parameter correction analysis on the detection light source according to the work monitoring characteristic distribution to obtain the corrected illumination parameters comprises: Assigning subsequent detection priority weights to each unit light source in the detection light source according to the distribution of the work monitoring characteristics, so as to obtain the subsequent detection priority weights of each unit light source in the detection light source; wherein the subsequent detection priority weights include a first priority weight, a second priority weight and a third priority weight, the first priority weight corresponds to a unit light source that has not participated in lighting work in a past time period, the second priority weight corresponds to a unit light source whose work monitoring characteristics meet the expected standards in a past time period, and the third priority weight corresponds to a unit light source whose work monitoring characteristics do not meet the expected standards in a past time period; According to the subsequent detection priority weight of each unit light source in the detection light source, the detection light source is divided into priority blocks to obtain a plurality of priority blocks in the detection light source; wherein each priority block has a corresponding priority mark, and the priority block includes a plurality of adjacently arranged unit light sources, and each priority block is in a state of overlapping and containing each other; According to the priority mark, the illumination condition parameters of each priority block are sequentially shifted and matched to obtain a priority block that can achieve the same detection effect as the illumination condition parameters and working parameters of each unit light source in the priority block; The working parameters of each unit light source in the priority block are combined to obtain the corrected illumination parameters.

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