An all-on-chip integrated photonic chip gyroscope

Abstract

The application belongs to the technical field of integrated optics and inertial sensing, and particularly relates to a full-chip-integrated photonic chip gyroscope. Active devices integrated on a silicon-based heterogeneous integrated chip include an SLD light source, a thin-film lithium niobate modulator and a detector. Passive devices integrated on the silicon-based heterogeneous integrated chip include an isolator, a one-to-two coupler, a polarizer, a one-to-two coupler and an on-chip waveguide ring. The silicon-based heterogeneous integrated chip is further integrated with a mode spot converter, a curved waveguide, a curved waveguide and a mode spot converter.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of integrated optics and inertial sensing, and particularly relates to a full-chip-integrated photonic chip gyroscope. BACKGROUND

[0002] As a key component of inertial navigation systems, fiber-optic gyroscopes are widely used in military fields such as aviation, navigation and land navigation systems due to their relatively low cost, fast start-up time and wide precision coverage. The core optical devices of traditional fiber-optic gyroscopes mainly include a light source, a coupler, a modulator, a detector and a fiber ring. The discrete devices are interconnected by fusion splicing, which leads to a complex production process, difficulty in improving quality consistency, and limitations on product size, cost and production capacity. With the increasing demand for miniaturization, low cost and high reliability of inertial navigation systems in weapon systems, traditional fiber-optic gyroscopes cannot meet the usage requirements of next-generation weapon systems. SUMMARY

[0003] The technical problem solved by the application is that the full-chip-integrated photonic chip gyroscope proposed by the application realizes the preparation of active and passive heterogeneous integrated chips through micro-transfer printing technology, eliminates fiber fusion and fiber coil winding processes, greatly reduces the complexity of gyroscope manufacturing processes, and shortens the development cycle. The micro-transfer printing technology used can realize the transfer of patterned small-size III-V materials and thin-film lithium niobate structures, minimize chip size and reduce material waste.

[0004] Technical scheme of the application:

[0005] A full-chip-integrated photonic chip gyroscope integrates all active and passive devices of the gyroscope in a single silicon-based heterogeneous integrated chip.

[0006] Specifically, the active devices integrated on the silicon-based heterogeneous integrated chip include an SLD light source 1-1, a thin-film lithium niobate modulator 1-8 and a detector 1-12.

[0007] The passive devices integrated on the silicon-based heterogeneous integrated chip include an isolator 1-2, a one-to-two coupler I 1-5, a polarizer 1-6, a one-to-two coupler II 1-7 and an on-chip waveguide ring 1-10.

[0008] The silicon-based heterogeneous integrated chip also integrates a mode spot converter I 1-3, a curved waveguide I 1-4, a curved waveguide II 1-9 and a mode spot converter II 1-11.

[0009] The SLD light source 1-1 is connected to the first input end of a one-to-two coupler I1-5 through an isolator 1-2, a mode spot converter I1-3 and a curved waveguide I1-4 in sequence, the output end of the one-to-two coupler I1-5 is connected to a polarizer 1-6, the other side of the polarizer 1-6 is connected to the input end of a one-to-two coupler II1-7; the first output end of the one-to-two coupler II1-7 is connected to the first modulation arm of a thin film lithium niobate modulator 1-8, the second output end of the one-to-two coupler II1-7 is connected to the second modulation arm of the thin film lithium niobate modulator 1-8; the first output end of the thin film lithium niobate modulator 1-8 is connected to the first input end of an on-chip waveguide ring 1-10, the second output end of the thin film lithium niobate modulator 1-8 is connected to the second input end of the on-chip waveguide ring 1-10; the second input end of the one-to-two coupler I1-5 is connected to a detector 1-12 through a mode spot converter II1-11.

[0010] Further,

[0011] The thin film lithium niobate modulator 1-8 comprises, in the order of light transmission, a SiN-lithium niobate double inverted taper structure, a transferred thin film lithium niobate ridge straight waveguide structure and a lithium niobate-SiN double inverted taper structure.

[0012] Further,

[0013] The thin film lithium niobate modulator 1-8 is obtained by the following method:

[0014] First, the thin film lithium niobate is patterned by a photolithography process, and a ridge waveguide, a gold electrode and two inverted taper structures with opposite directions are constructed on the thin film lithium niobate;

[0015] Then, the patterned thin film lithium niobate is removed, and a micro-transfer device is used to transfer it above the SiN waveguide, and the surrounding of the SiN waveguide is filled with an interlayer medium auxiliary material BCB; two inverted taper structures matched with the two inverted taper structures are arranged above the SiN waveguide, thereby forming a SiN-lithium niobate double inverted taper structure and a lithium niobate-SiN double inverted taper structure, respectively;

[0016] Finally, an annealing process is performed to tightly adhere the thin film lithium niobate above the SiN waveguide.

[0017] Further,

[0018] The thickness of the thin film lithium niobate is 300 nm, the etching depth is 180 nm, a 100 nm thick gold film is used as the gold electrode, and the electrode spacing is set to 7 μm.

[0019] Further,

[0020] The wide-spectrum light emitted by the SLD light source 1-1 contains both TE0 and TM0 polarization modes, and the isolator 1-2 prevents the light from being transmitted in the reverse direction along the transmission path to the SLD light source 1-1, effectively suppressing the spectrum modulation; the light is efficiently coupled to the first input end of the one-to-two coupler 1-5 through the mode spot converter 1-3, enters the polarizer 1-6 through the output end of the one-to-two coupler 1-5, and in the polarizer 1-6, the light of the TM0 polarization mode cannot pass normally, and only the light of the TE0 mode passes with low loss; the light of the TE0 mode is equally divided into two parts through the one-to-two coupler 11 1-7, and the two beams of light pass through the two output ends of the one-to-two coupler 11 1-7, are efficiently coupled to the transferred thin-film lithium niobate ridge waveguide through the SiN-lithium niobate double-layer inverted taper structure on the thin-film lithium niobate modulator 1-8, pass through the lithium niobate-SiN double-layer inverted taper on the thin-film lithium niobate modulator 1-8 and the two ends of the on-chip waveguide ring 1-10, propagate in the clockwise and counterclockwise directions in the on-chip waveguide ring 1-10 respectively, and satisfy the coherence condition; the non-reciprocal phase shift is generated by using the gyro closed-loop control modulator to compensate for the Sagnac phase shift caused by rotation, and the rotation angle rate information is obtained by demodulation; the loop light passes through the thin-film lithium niobate modulator 1-8, the one-to-two coupler 11 1-7 and the polarizer 1-6 to reach the one-to-two coupler 1-5; the light at the first input end of the one-to-two coupler 1-5 is blocked by the isolator 1-2, and the light at the second input end of the one-to-two coupler 1-5 passes through the mode spot converter 11 1-11 to reach the detector 1-12.

[0021] Further,

[0022] The connection between the passive devices in the silicon-based heterogeneous integrated chip 1 is realized by a silicon-based SiN waveguide with a large width-to-height ratio, which is greater than 10.

[0023] Further,

[0024] The SLD light source 1-1 and the detector 1-12 in the silicon-based heterogeneous integrated chip 1 are realized by transferring a micro-patterned III-V group material on a silicon-based substrate.

[0025] Further,

[0026] The bend waveguide 1-4 and the bend waveguide 11 1-9 are designed with a bend radius that meets the critical value, and the bend loss is less than or equal to 0.01 dB.

[0027] The on-chip waveguide ring 1-10 is realized by a multi-layer silicon-based SiN waveguide with a large width-to-height ratio, and the interlayer waveguide adopts a double-layer inverted taper structure to realize efficient coupling. The thickness of the on-chip waveguide ring is 0.1 um, and the width of the waveguide is 2 um.

[0028] Further,

[0029] The mode spot converter I1-3 and the mode spot converter II1-11 adopt a linear reverse cone structure, the central wavelength is 1310nm or 1550nm, and mode field matching of the SLD light source 1-1 and the one-to-two coupler I1-5, the one-to-two coupler I1-5 and the reach detector 1-12 is realized respectively;

[0030] The one-to-two coupler I1-5 and the one-to-two coupler II1-7 adopt a 1x2 multimode interference structure, and the input / output waveguides are respectively arranged at the positions of the central offset ±w / 6 relative to the multimode interference region, wherein w is the width of the multimode interference region.

[0031] The integrated photon chip can realize full-chip integration and large-scale batch production of the gyro optical system, greatly reduce the optical path size and manufacturing cost of the gyro, and improve product consistency, reliability and production efficiency, and is an inevitable trend of development of the next generation of optical gyroscopes.

[0032] The full-chip integrated photon chip gyro scheme provided by the application realizes preparation of active and passive heterogeneous integrated chips through micro transfer technology, eliminates optical fiber fusion, tail fiber coiling and other processes, greatly reduces the complexity of the gyro manufacturing process, and shortens the development cycle. The micro transfer technology used can realize transfer of patterned small-size III-V group materials and thin film lithium niobate structures, minimize chip size, and reduce material waste.

[0033] In the application, the heterogeneous integrated chip adopts a COMS compatible semiconductor process, which can greatly improve product consistency, production efficiency and reduce manufacturing cost. The single-chip integration and overall packaging of the gyro optical device, combined with the ASIC circuit, greatly reduce the overall size and cost of the gyro, improve the long-term reliability of the gyro performance, and meet the miniaturization and lightweight requirements of future weapon systems. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 Fig. 1 is a schematic diagram of a full-chip integrated photon chip gyro scheme of the application;

[0035] Figure 2 Fig. 1(a) is a schematic diagram of a light source-waveguide mode spot converter; and Fig. 1(b) is a schematic diagram of a detector-waveguide mode spot converter;

[0036] Figure 3 Fig. 2 is a 1x2 MMI coupler structure;

[0037] Figure 4 Fig. 3 is a schematic diagram of a thin film lithium niobate modulator structure;

[0038] Figure 5 Fig. 4 is a schematic diagram of a double-layer reverse cone structure. DETAILED DESCRIPTION

[0039] In view of the large size, complex process, high cost, low production capacity and other defects caused by the discrete optical path devices of the traditional fiber-optic gyroscope, the application provides a full-chip-integrated photonic chip gyroscope scheme.

[0040] The application is further described in detail in combination with the drawings.

[0041] Referring to Figure 1 The full-chip-integrated photonic chip gyroscope mainly comprises a silicon-based heterogeneous integrated chip 1, a TEC 2 and a control circuit 3. The control circuit is used for applying a modulation signal to the modulator 1-8, simultaneously supplying power to the light source 1-1 and the temperature control module TEC 2 and demodulating the optical signal output by the silicon-based heterogeneous integrated chip 1.

[0042] The silicon-based heterogeneous integrated chip is integrated with an SLD light source 1-1, an isolator 1-2, a mode spot converter I 1-3, a curved waveguide I 1-4, a one-to-two coupler I 1-5, a polarizer 1-6, a one-to-two coupler II 1-7, a thin-film lithium niobate modulator 1-8, a curved waveguide II 1-9, an on-chip waveguide ring 1-10, a mode spot converter II 1-11 and a detector 1-12.

[0043] The SLD light source 1-1 passes through the isolator 1-2 and is connected with the first input end of the one-to-two coupler I 1-5 through the mode spot converter I 1-3 and the curved waveguide I 1-4. The output end of the one-to-two coupler is connected with the polarizer 1-6. The other side of the polarizer 1-6 is connected with the input end of the one-to-two coupler II 1-7. The first output end of the one-to-two coupler II is connected with the first modulation arm of the thin-film lithium niobate modulator 1-8. The second output end of the one-to-two coupler II is connected with the second modulation arm of the thin-film lithium niobate modulator 1-8. The first output end of the thin-film lithium niobate modulator 1-8 is connected with the first input end of the on-chip waveguide ring 1-10. The second output end of the thin-film lithium niobate modulator 1-8 is connected with the second input end of the on-chip waveguide ring 1-10. The other input end of the one-to-two coupler I 1-5 is connected with the detector 1-12 through the mode spot converter II 1-11.

[0044] The wide-spectrum light emitted by the SLD light source 1-1 contains both TE0 and TM0 polarization modes, and the isolator 1-2 prevents the light from being transmitted in the reverse direction along the transmission path to the SLD light source 1-1, effectively suppressing spectral modulation; the light is coupled to the first input end of the 1:2 coupler I1-5 through the mode spot converter I1-3, enters the polarizer 1-6 through the output end of the 1:2 coupler I1-5, and in the polarizer 1-6, only the light of the TE0 mode can pass through with low loss, while the light of the TM0 mode cannot pass through normally; the light of the TE0 mode is equally divided into two parts with a ratio of 50:50 through the 1:2 coupler II1-7, and the two beams of light pass through the two output ends of the 1:2 coupler II1-7, are coupled to the transferred thin-film lithium niobate ridge straight waveguide through the SiN-lithium niobate double-layer inverted taper structure, and enter the thin-film lithium niobate modulator 1-8; the two output ends of the thin-film lithium niobate modulator 1-8 are connected to the two ends of the on-chip waveguide ring 1-10 through the lithium niobate-SiN double-layer inverted taper; the two beams of light propagate in the clockwise and counterclockwise directions in the on-chip waveguide ring 1-10, respectively, and satisfy the coherent condition, and the non-reciprocal phase shift is generated by using the gyro closed-loop control modulator to compensate for the Sagnac phase shift caused by rotation, and the rotation angle rate information is obtained by demodulation; the loop light passes through the thin-film lithium niobate modulator 1-8, the 1:2 coupler II1-7, and the polarizer 1-6 to reach the 1:2 coupler I1-5; the light at the first input end of the 1:2 coupler I1-5 is blocked by the isolator 1-2, and the light at the second input end of the 1:2 coupler I1-5 passes through the mode spot converter II1-11 to reach the detector 1-12.

[0045] The mode spot converter I1-3, the curved waveguide I1-4, the 1:2 coupler I1-5, the polarizer 1-6, the 1:2 coupler II1-7, the curved waveguide II1-9, the on-chip waveguide ring 1-10, and the mode spot converter II1-11 in the silicon-based heterogeneous integrated chip 1 are passive devices, which are realized through silicon-based SiN waveguides with a large width-height ratio ≥10.

[0046] The SLD light source 1-1 and the detector 1-12 in the silicon-based heterogeneous integrated chip 1 are realized by transferring a micro-patterned III-V group material on a silicon-based substrate; and the thin-film lithium niobate modulator 1-8 is realized by transferring a small-size thin-film lithium niobate on a silicon-based SiN waveguide.

[0047] The curved waveguide I1-4 and the curved waveguide II1-9 are designed to have a bending radius that meets a critical value, so that the bending loss is ≤0.01 dB.

[0048] The polarizer 1-6 adopts an absolute single-mode waveguide scheme, and polarization state selection is realized by accurately controlling the waveguide width; in the transmission process, the waveguide width is gradually narrowed to a critical value, so that the TM0 polarization mode light cannot pass normally, only the TE0 mode light passes with low loss, and a high extinction ratio of > 60dB is realized.

[0049] The thin film lithium niobate modulator 1-8 is integrated on a chip by micro transfer technology, and the transfer of a small-size patterned thin film lithium niobate structure is realized, and the size is minimized. Micro transfer can simultaneously transfer multiple structures, and is a large-scale process. The thin film lithium niobate dry etching process incompatible with CMOS is excluded from the large-scale CMOS process.

[0050] The structure diagram of the thin film lithium niobate modulator 1-8 is shown in Figure 4 First, the thin film lithium niobate is patterned by photolithography and etching process to construct a ridge waveguide, then the thin film lithium niobate LNTF is removed by using an appropriate polymer BCB, and is accurately transferred to the upper side of the SiN waveguide by using a micro transfer device, the surrounding of the SiN waveguide is filled with an interlayer dielectric auxiliary material, and finally the thin film lithium niobate is tightly adhered to the upper side of the SiN waveguide by annealing process. In the embodiment of the present application, the thickness of the thin film lithium niobate is 300nm, the etching depth is 180nm, a 100nm thick gold film is used as the electrode, and the electrode spacing is set to 7um.

[0051] The high-efficiency coupling of the thin film lithium niobate modulator 1-8, the SiN on-chip waveguide ring 1-10 and the one-to-two coupler II 1-7 is realized by the SiN-lithium niobate double-layer inverted cone structure, and the coupling efficiency as low as about 2dB can be realized by double-layer overlaying and etching of the SiN waveguide layer and the thin film lithium niobate, and the structure diagram is shown in Figure 5 .

[0052] The thin film lithium niobate modulator 1-8 adopts a ridge straight waveguide as a modulation arm, and the modulation signal applied by the gold electrodes on both sides of the modulation arm directly acts on the thin film lithium niobate material, and the modulation rate can reach GHz, and the modulation efficiency is high.

[0053] The on-chip waveguide ring 1-10 is realized by a large-width-to-height ratio multilayer silicon-based SiN waveguide, and the double-layer inverted cone structure is used to realize high-efficiency coupling. By using a low-loss deposition process of silicon nitride thin film material, the waveguide loss can be as low as 0.01dB / cm after high-temperature annealing, and the silicon nitride waveguide has lower bending loss. In the present embodiment, the thickness of the SiN waveguide ring is 0.1um, and the waveguide width is 2um.

[0054] The overall temperature control of the silicon-based heterogeneous integrated chip 1 is realized by TEC2, the wavelength drift of the SLD light source 1-1 is reduced, and the modulation efficiency of the thin film lithium niobate modulator 1-8 is improved.

[0055] Mode spot converter I1-3, mode spot converter II1-11 adopts linear inverted cone structure, as shown in Figure 2 The center wavelength 1310nm or 1550nm, respectively, realizes the mode field matching of SLD light source 1-1 and one-to-two coupler I1-5, one-to-two coupler I1-5 and reach detector 1-12.

[0056] One-to-two coupler I1-5 and one-to-two coupler II1-7 adopt 1x2 multimode interference MMIs structure, as shown in Figure 3 The input / output waveguide is respectively placed at the center offset ±w / 6 position relative to the MMI multimode interference region, and w is the width of the multimode interference region. By controlling the length of the coupling region, a 50%:50% splitting ratio is realized, and the center wavelength is 1310nm or 1550nm. In the embodiment of the application, the SiN chip waveguide width is 2μm, and the height is 0.1μm.

[0057] The integrated photonic chip can realize the full-chip integration of the gyro optical system and large-scale batch production, greatly reduce the optical path size and manufacturing cost of the gyro, and improve the product consistency, reliability and production efficiency, which is the inevitable trend of the development of the next generation of optical gyroscopes.

[0058] The application provides a full-chip integrated photonic chip gyro scheme, which realizes the preparation of active and passive heterogeneous integrated chips through micro transfer printing technology, eliminates optical fiber fusion, tail fiber coiling and other processes, greatly reduces the complexity of the gyro manufacturing process, and shortens the development cycle. The micro transfer printing technology can realize the transfer of patterned small-size III-V group materials and thin-film lithium niobate structures, minimize the chip size, and reduce material waste.

[0059] In the application, the heterogeneous integrated chip adopts a COMS compatible semiconductor process, which can greatly improve the product consistency, production efficiency and reduce the manufacturing cost. The single-chip integration and overall packaging of the gyro optical device, combined with the ASIC circuit, greatly reduce the overall size and cost of the gyro, improve the long-term reliability of the gyro performance, and meet the miniaturization and lightweight requirements of future weapon systems.

Claims

1. An all-on-chip photonic chip gyroscope, comprising: All active devices and passive devices of the gyroscope are integrated on a single silicon-based heterogeneous integration chip; The active devices integrated on the silicon-based heterogeneous integration chip comprise an SLD light source (1-1), a thin-film lithium niobate modulator (1-8), and a detector (1-12); The passive devices integrated on the silicon-based heterogeneous integration chip comprise an isolator (1-2), a one-to-two coupler I (1-5), a polarizer (1-6), a one-to-two coupler II (1-7), and an on-chip waveguide ring (1-10); The silicon-based heterogeneous integration chip further integrates a mode spot converter I (1-3), a curved waveguide I (1-4), a curved waveguide II (1-9), and a mode spot converter II (1-11); The SLD light source (1-1) is connected to the first input end of the one-to-two coupler I (1-5) through the isolator (1-2), the mode spot converter I (1-3), and the curved waveguide I (1-4) in sequence, the output end of the one-to-two coupler I (1-5) is connected to the polarizer (1-6), and the other side of the polarizer (1-6) is connected to the input end of the one-to-two coupler II (1-7); the first output end of the one-to-two coupler II (1-7) is connected to the first modulation arm of the thin-film lithium niobate modulator (1-8), and the second output end of the one-to-two coupler II (1-7) is connected to the second modulation arm of the thin-film lithium niobate modulator (1-8); the first output end of the thin-film lithium niobate modulator (1-8) is connected to the first input end of the on-chip waveguide ring (1-10), and the second output end of the thin-film lithium niobate modulator (1-8) is connected to the second input end of the on-chip waveguide ring (1-10); the second input end of the one-to-two coupler I (1-5) is connected to the detector (1-12) through the mode spot converter II (1-11); The thin-film lithium niobate modulator (1-8) comprises, in the order of light transmission, a SiN-lithium niobate double-layer inverted taper structure, a transferred thin-film lithium niobate ridge-shaped straight waveguide structure, and a lithium niobate-SiN double-layer inverted taper structure; The thin-film lithium niobate modulator (1-8) is obtained by the following method: First, the thin-film lithium niobate is patterned by a photolithography process, and a ridge-shaped waveguide, a gold electrode, and two inverted taper structures with opposite directions are constructed on the thin-film lithium niobate; Then, the patterned thin-film lithium niobate is removed, and a micro-transfer device is used to transfer it above the SiN waveguide, and the surrounding of the SiN waveguide is filled with an interlayer medium auxiliary material BCB; two inverted taper structures matched with the two inverted taper structures are arranged above the SiN waveguide, thereby forming a SiN-lithium niobate double-layer inverted taper structure and a lithium niobate-SiN double-layer inverted taper structure, respectively; finally, an annealing process is performed to tightly adhere the thin-film lithium niobate to the SiN waveguide; The connection between the passive devices in the silicon-based heterogeneous integration chip 1 is realized by a silicon-based SiN waveguide with a large width-to-height ratio, which is greater than 10; The SLD light source (1-1) and the detector (1-12) in the silicon-based heterogeneous integration chip 1 are realized by transferring a micro-patterned III-V group material on a silicon-based substrate. The bending waveguide I (1-4) and the bending waveguide II (1-9) are designed to have a bending radius satisfying a critical value, so that the bending loss is less than or equal to 0.01 dB; The on-chip waveguide ring (1-10) is implemented by using a large-width-to-height ratio multilayer silicon-based SiN waveguide, and a double-layer inverted taper structure is used between layers to achieve efficient coupling, the thickness of the on-chip waveguide ring is 0.1 um, and the waveguide width is 2 um. 2.The all-on-chip integrated photonic chip gyroscope according to claim 1, wherein The thickness of the thin film lithium niobate is 300 nm, the etching depth is 180 nm, a 100-nm-thick gold film is used as a gold electrode, and the electrode spacing is 7 um. 3.The all-on-chip integrated photonic chip gyroscope according to claim 2, wherein The SLD light source (1-1) emits wide-spectrum light containing TE0 and TM0 polarization modes, the isolator (1-2) prevents the light from being transmitted in the reverse direction to the SLD light source (1-1) along the transmission path, and effectively suppresses the spectrum modulation; the light is efficiently coupled to the first input end of the one-to-two coupler I (1-5) through the mode spot converter I (1-3), enters the polarizer (1-6) through the output end of the one-to-two coupler I (1-5), in the polarizer (1-6), only the TE0 mode light can pass through with low loss, and the TM0 mode light cannot pass through normally; the TE0 mode light is equally divided into two parts through the one-to-two coupler II (1-7), the two beams of light pass through the two output ends of the one-to-two coupler II (1-7), and are efficiently coupled with the transferred thin film lithium niobate ridge waveguide through the SiN-lithium niobate double-layer inverted taper structure on the thin film lithium niobate modulator (1-8); then the two beams of light are connected with the two ends of the on-chip waveguide ring (1-10) through the lithium niobate-SiN double-layer inverted taper on the thin film lithium niobate modulator (1-8); the two beams of light propagate in the clockwise and counterclockwise directions in the on-chip waveguide ring (1-10) respectively, and satisfy the coherence condition, the non-reciprocal phase shift is generated by using the gyroscope closed-loop control modulator to compensate for the Sagnac phase shift caused by rotation, and the rotation angle rate information can be obtained by demodulation; the loop light passes through the thin film lithium niobate modulator (1-8), the one-to-two coupler II (1-7), and the polarizer (1-6) to reach the one-to-two coupler I (1-5); through the one-to-two coupler I (1-5), the light at the first input end of the one-to-two coupler I (1-5) is blocked by the isolator (1-2), and the light at the second input end of the one-to-two coupler I (1-5) passes through the mode spot converter II (1-11) to reach the detector (1-12). 4.The all-on-chip integrated photonic chip gyroscope according to claim 1, wherein The mode spot converter I (1-3) and the mode spot converter II (1-11) adopt a linear inverted taper structure, the center wavelength is 1310 nm or 1550 nm, and the mode field matching of the SLD light source (1-1) and the one-to-two coupler I (1-5), and the one-to-two coupler I (1-5) and the detector (1-12) is realized respectively. The one-to-two coupler I (1-5) and the one-to-two coupler II (1-7) adopt a 1×2 multimode interference structure, and the input / output waveguides are respectively placed at the positions of ±w / 6 offset from the center of the multimode interference region, w being the width of the multimode interference region.

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