Memory fault prediction method and device, chip, equipment and storage medium

By comparing the error position distribution of the memory error correction unit with the reference position distribution of the memory failure model, the probability of UCE in memory is predicted, which solves the problem of poor memory failure prediction timeliness in the prior art, and improves the accuracy and timeliness of prediction.

CN119718732APending Publication Date: 2025-03-28CHENGDU HUAWEI TECH CO LTD
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Patent Information

Application Number
CN202311286869.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-09-28
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The existing memory fault prediction methods are poor in time and require the acquisition of a large amount of correctable error (CE) information, resulting in prediction delay.

Method used

By obtaining the error position distribution of the error correction unit associated with the memory and comparing it with the reference position distribution in the memory failure model, the prediction results are output based on the similarity, indicating the probability of an uncorrectable error (UCE) in the memory.

Benefits of technology

It improves the timeliness of memory failure prediction, and can make predictions when correctable errors occur in memory, without waiting for a large amount of CE information to be collected, which enhances the accuracy of prediction.

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Abstract

The invention discloses a memory fault prediction method and device, a chip, equipment and a storage medium, and belongs to the technical field of computers. The method comprises the steps that error position distribution of an error correction unit associated with a memory is obtained, the memory comprises at least one memory particle, the error correction unit comprises a plurality of data bits obtained from a plurality of storage units of the memory through continuous multiple burst reading, and each data bit corresponds to one storage unit in the memory; the error position distribution is used for indicating the position of an error data bit in a plurality of data bits, and the error position distribution causes the occurrence of CE in the memory; a memory fault model is obtained, the memory fault model comprises at least one reference position distribution, and the reference position distribution is associated with the UCE of the memory; according to the similarity between the error position distribution and the at least one reference position distribution, a prediction result is output, and the prediction result is used for indicating the probability that the UCE occurs in the memory. The method is beneficial to improving the timeliness of memory fault prediction.
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