Simulation analysis method for single-particle electric leakage of wide bandgap semiconductor device

Abstract

The invention discloses a simulation analysis method for single-particle electric leakage of a wide bandgap semiconductor device, and the method comprises the steps: constructing a geometric model of a to-be-simulated power device, calculating the vacancy defect density of the power device, carrying out the two-dimensional modeling and grid division, building an electrical model of the power device, and fitting an electrical curve of the power device; then, a collision ionization model after high-energy particle incidence is introduced, mobility and electric leakage degradation parameters are optimized, and an electric leakage degradation model corresponding to the power device is established; and finally, carrying out damage mechanism analysis, extracting the change of microscopic physical parameters of the power device along with time by changing influence parameters in the radiation process, and carrying out reinforcement and optimization on the power device. According to the method, the physical processes of different particle radiation devices can be accurately simulated, different microscopic physical parameters in the electric leakage process of the wide bandgap semiconductor device are extracted, and a technical basis is provided for radiation effect mechanism analysis and reliability evaluation of the wide bandgap semiconductor device by establishing different electric leakage models.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor device radiation resistance analysis, and in particular to a simulation analysis method for single particle leakage of a wide bandgap semiconductor device. Background Art

[0002] With the development of semiconductor technology, power devices occupy an important position in modern electronic devices, especially in the field of energy conversion and energy management. The main advantages of power devices are reflected in the following aspects: First, power devices have efficient energy conversion capabilities. Whether it is MOSFET or IGBT, they can transmit power with extremely low energy loss, significantly improving the efficiency of the system, especially in applications such as electric vehicles and solar inverters; secondly, power devices can handle high voltage and high current, adapt to high-power application scenarios such as industrial motor drive and grid management, which makes them widely used in high-voltage environments; in addition, power devices also have fast switching speeds, especially devices such as MOSFET, which perform well in high-frequency environments, providing higher performance and response speed for devices such as DC-DC converters; the low heat loss design of power devices is also a major advantage, which helps reduce heat dissipation requirements, extend equipment life, and improve the overall reliability of the system. With the application of wide bandgap semiconductor materials (such as SiC and GaN), power devices have been significantly improved in performance and size, making them perform better in high temperature, high pressure and high frequency environments. They have occupied an irreplaceable position in various electronic and industrial systems, especially in the aerospace field, playing a vital role.

[0003] When power devices are used in deep space exploration environments, the influence of cosmic particles will induce various faults in the equipment in the spacecraft. The main abnormal faults include single particle effect, total dose effect, displacement damage, etc. Compared with power devices made of Si materials, when cosmic rays or high-energy particles (heavy ions) enter power devices made of wide bandgap semiconductor materials, when they collide with the materials in the device, they will cause transient abnormalities or permanent changes in the current or voltage in the local area, which will cause leakage and even cause more serious damage, such as permanent leakage or short circuit. Therefore, it is very important to propose a simulation method for analyzing single particle leakage of power devices.

[0004] At present, the method for monitoring single-particle leakage is mainly to use the ground-based space environment simulation platform, collect current data during irradiation through corresponding in-situ tests, and conduct characterization experiments for analysis. This series of processes is cumbersome, and the experiments or characterization tests are expensive. At the same time, the leakage phenomenon of power devices is a complex process, which is related to many factors such as the position of ion incidence, the direction of incidence, the magnitude of incident energy, and the incidence bias. It is very difficult to carry out a series of experiments and characterizations, and it is impossible to carry out corresponding reinforcement for the damaged location. Therefore, the existing experimental methods have the problems of being too simple in monitoring the single-particle leakage phenomenon of power devices, and the difficulty of designing and verifying device radiation protection, low accuracy, and high research cost. Summary of the invention

[0005] The problem to be solved by the present invention is to provide a simulation and analysis method for single-particle leakage of wide-bandgap semiconductor devices, establish a single-particle leakage model by using TCAD software, simulate the leakage current variation trend of power devices after irradiation, realize the evolution of important electrical parameters such as the internal electric field strength, leakage current density, and temperature of the device over time after particle irradiation, further study the leakage current damage mechanism of power devices in a targeted manner, and thus provide a research basis for the device's resistance to radiation damage.

[0006] The present invention adopts the following technical solution: a simulation analysis method for single-particle leakage of a wide bandgap semiconductor device, comprising the following steps:

[0007] S1. Construct a geometric model of the power device to be simulated and obtain the vacancy defect density of the power device;

[0008] S2. Perform two-dimensional modeling and meshing of the power device to be simulated by using a two-dimensional modeling tool for semiconductor devices; optimize the two-dimensional model of the power device to be simulated, establish an electrical model of the power device, and fit the electrical curve of the power device;

[0009] S3, inputting the vacancy defect density of the power device into the electrical model of step S2, establishing a defect model, introducing an impact ionization model after high-energy particle incidence based on the relationship between the ionization coefficient and the avalanche effect factor, optimizing the mobility and leakage degradation parameters, and establishing a corresponding leakage degradation model for the power device;

[0010] S4. Based on the leakage degradation model of power devices, damage mechanism analysis is carried out. By changing the influencing parameters in the radiation process, the changes of the microscopic physical parameters of the power devices over time are extracted to strengthen and optimize the power devices.

[0011] Preferably, in step S1, the power device is a semiconductor device with different wide bandgap. According to the design and process parameters of the power device to be simulated, a geometric model of the power device is constructed by Monte Carlo software, and a complete cascade collision physics process is used for simulation to simulate the damage process of the power device after particle irradiation, and the vacancy defect density of the power device is calculated.

[0012] The defect density of the power device is calculated as follows: In the Monte Carlo software simulation, based on the defect center near the heterojunction interface and according to the number of vacancies generated by the irradiated particles within a certain depth of the material, the vacancy density at a certain depth is calculated under different radiation fluences to obtain the vacancy defect density at the sensitive position of the power device.

[0013] Preferably, in step S2, the semiconductor device two-dimensional modeling tool is TCAD software, and the two-dimensional model of the power device to be simulated is obtained by TCAD software, and meshing is performed to generate a meshed structure matching the power device structure.

[0014] The generated two-dimensional model of the power device is optimized, the process parameters of the power device are calibrated, the typical electrical curve of the power device is extracted, and the curve is fitted with the corresponding electrical curve in the power device product manual to make the electrical simulation result consistent with the device product manual; the process parameters include: substrate, drift region, channel layer, barrier layer, body region and source region size, concentration; the typical electrical curve includes: transfer characteristic curve, off-state leakage characteristic curve.

[0015] Preferably, the two-dimensional model of the power device is optimized by: changing the process parameters of each area of ​​the power device in a variable manner, judging the influence of each process parameter on the characteristics of the power device by the amplitude of change of the simulation curve, taking the process parameter with the greatest influence as the preferred variable for optimization, and achieving optimal calibration of the simulation results by adjusting the preferred variable.

[0016] Preferably, in step S3, establishing a corresponding leakage degradation model of the power device includes the following sub-steps:

[0017] S3.1. Input the vacancy defect data calculated in step S1 into the electrical model established in step S2, adjust the parameters of heavy ion ionization, and establish a power device defect model;

[0018] S3.2. In the leakage degradation caused by heavy ion incidence, the sensitive position of the power device produces an avalanche effect, causing ionized charge deposition. Under the action of the electric field, the current rises sharply. According to the relationship between the ionization coefficient α and the avalanche effect factor M, an electron-hole generation rate model is constructed based on the power device defect model;

[0019] The ionization coefficient α is expressed as follows:

[0020] α=α n +α p

[0021] Among them, α n , α p represent the electron ionization coefficient and the hole ionization coefficient respectively;

[0022] The avalanche effect factor M is expressed as follows:

[0023]

[0024] Where d represents the length of the area where the electric field acts.

[0025] The electron-hole generation rate model is expressed as follows:

[0026]

[0027] Among them, J n , J p They represent the electron current density and the hole current density respectively, q represents the charge of the electron, and G represents the generation rate of electron-hole pairs.

[0028] S3.3. The leakage value of the power device is proportional to the electron ionization coefficient and the hole ionization coefficient. The material collision ionization coefficient, the critical electric field coefficient and the leakage damage related parameters are optimized, and the collision ionization model after high-energy particle incidence is established, which is expressed as follows:

[0029]

[0030] Among them, A n is the mobility coefficient, B n is the electric field coefficient, n=1,2; E represents the critical electric field coefficient.

[0031] S3.4. After fitting the impact ionization model with the experimental results, the leakage model of the power device is obtained;

[0032] The leakage model of the power device is constructed based on the correlation between the mobility coefficient and the carrier mobility under high electric field, and the correlation between the electric field coefficient and the electric field strength of the activated ionization effect, and is used to simulate the leakage effect of the power device under particles of different energies and different bias voltages; conduct leakage damage mechanism analysis, and realize the evolution process of the internal electrical parameters of the power device after particle irradiation with time by simulating the leakage current change trend of the power device after irradiation; the internal electrical parameters include: electric field strength, leakage current density, and temperature.

[0033] Compared with the prior art, the present invention adopts the above technical solution and has the following technical effects:

[0034] 1. Based on TCAD software, the present invention simulates the single particle leakage effect of power devices caused by space radiation particles, establishes a leakage model of wide bandgap semiconductor devices, and has good consistency with experimental results. Based on this leakage model, the leakage effect of power devices under conditions of particles with different energies and different bias voltages is further simulated, the changes in the microscopic physical parameters inside the device are studied, and further reinforcement measures are proposed.

[0035] 2. Compared with previous methods, the simulation analysis method of single-particle leakage of wide-bandgap semiconductor devices in the present invention solves the problem of high cost of ground-based space simulation experiments or characterization tests, and can flexibly change experimental conditions to carry out corresponding evaluation research on single-particle leakage effects for different wide-bandgap semiconductor devices.

[0036] 3. The simulation analysis method of single-particle leakage of wide-bandgap semiconductor devices of the present invention provides a technical basis for the analysis of the radiation effect mechanism and reliability evaluation of wide-bandgap semiconductor devices, and is of great significance for promoting the application of power devices in the aerospace field. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A flow chart of a simulation analysis method for single particle leakage of a wide bandgap semiconductor device according to the present invention;

[0038] Figure 2 is a SRIM simulation model of the GaN HEMT of the present invention;

[0039] Figure 3 is a TCAD simulation model of the GaN HEMT of the present invention;

[0040] Figure 4 is the transfer characteristic fitted by the GaN HEMT device of the present invention;

[0041] Figure 5 It is the off-state leakage characteristic fitted before irradiation of the GaN HEMT device of the present invention;

[0042] Figure 6 It is the off-state leakage characteristic fitted after irradiation of the GaN HEMT device of the present invention;

[0043] Figure 7 is the change of the gate current of the GaN HEMT with time under different gate biases of the present invention;

[0044] Figure 8 The electric field of the gate of the GaN HEMT changes with time under different gate biases of the present invention. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the application is further elaborated in detail below in conjunction with the accompanying drawings. The described embodiments are only a part of the embodiments involved in the present invention. All non-innovative embodiments of other researchers in the field on this embodiment belong to the protection scope of the present invention. At the same time, for the step numbering in the embodiment of the present invention, it is only set for the convenience of explanation, and the order between the steps is not limited in any way. The execution order of each step in the embodiment can be adaptively adjusted according to the understanding of those skilled in the art.

[0046] When high-energy particles are incident on semiconductor devices, they will produce Rutherford scattering collisions with the semiconductor lattice and lose some energy. The Compton interaction with the nucleus will transfer part of the energy of the high-energy particle to the lattice, causing a large number of electron-hole pairs to be generated inside the device and forming ionization tracks. A large number of electron-hole pairs produce ionized charge deposition at sensitive locations of the device, and cause an increase in current under the action of the electric field. In severe cases, single particle burnout occurs. The current existing methods for studying leakage damage in wide bandgap semiconductor devices are as follows:

[0047] Using ground-based space simulation equipment, we conducted heavy ion irradiation experiments on wide bandgap semiconductor devices and monitored the leakage current curves of the devices after irradiation in situ, such as the drain current curve I ds , Gate current curve I gs If abnormal values ​​are found in the device, it is necessary to carry out corresponding characterization experiments, take electron microscope photos of the wide bandgap semiconductor device, and observe the internal microscopic damage. Although this experimental method measures data more accurately, the process is lengthy and complicated, and ignores the impact of the specific physical process of irradiation on the device, and cannot provide corresponding guidance for subsequent radiation hardening work.

[0048] The simulation analysis method for single-particle leakage of wide-bandgap semiconductor devices described in the present invention can better solve this problem. By using TCAD software, the physical process of different particle radiation devices can be accurately simulated, and different microscopic physical parameters in the leakage process of wide-bandgap semiconductor devices, such as electric field strength, current density, etc., can be extracted. Compared with the experimental method, this method can establish different leakage models for different particles, different incident angles, different biases, etc., saving more time and cost, and can better carry out research on radiation-resistant reinforcement of wide-bandgap semiconductor devices.

[0049] In one embodiment of the present invention, a simulation analysis method for single particle leakage of a wide bandgap semiconductor device is provided. Figure 1 As shown, the following steps are included:

[0050] (1) According to the design and process parameters of the power device to be simulated, a geometric model of the power device is constructed using Monte Carlo software (SRIM, etc.). The complete cascade collision physics process is used to simulate the damage process of the power device after particle irradiation, and the vacancy defect density at the sensitive position of the power device is further extracted.

[0051] (2) According to the design and process parameters of the power device to be simulated, the power device to be simulated is two-dimensionally modeled by a two-dimensional modeling tool of semiconductor devices using TCAD software, and meshing is performed to generate a meshed device structure, where the mesh structure matches the structure of the device.

[0052] (3) Optimize the power device model in step (2), calibrate the device's substrate, drift region, body region, and source region size, concentration and other process parameters, extract the power device's transfer characteristic curve, off-state leakage and other typical electrical curves, and fit them with the corresponding electrical curves in the device product manual, so as to finally make the electrical simulation results consistent with the device product manual.

[0053] (4) The defect density calculated by Monte Carlo software is input into the electrical model established by TCAD in step (3) to obtain the device defect model. The defect model is the basis for establishing the leakage degradation model.

[0054] (5) In the off-state leakage characteristics, the leakage current mechanism of the device is often defined as that after the internal electric field reaches the breakdown electric field strength of the GaN material, the lattice undergoes violent collision ionization to generate a large number of electron-hole pairs, causing the device to undergo an avalanche effect. According to the electron-hole generation rate model: Based on the defect model in step (4), the material collision ionization rate α and critical electric field coefficient E and other parameters related to leakage damage are optimized, and a collision ionization model after high-energy particle incidence is established. After fitting with the experimental results, the leakage model of the power device is obtained. At the same time, according to the research objectives, the relevant influencing parameters in the radiation process are changed in a targeted manner, the microscopic physical parameters inside the device are extracted, the leakage damage mechanism is simulated and analyzed, and theoretical support is provided for strengthening the device.

[0055] Preferably, in one embodiment, a wide bandgap semiconductor device GaN HEMT device is taken as an example to perform a simulation analysis of single particle leakage.

[0056] First, if Figure 2 As shown in the figure, it is a schematic diagram of the structure of GaN HEMT calculated by SRIM software. To ensure a sufficiently small error, a simple device structure is used. The steps are as follows:

[0057] Step 1-1: SRIM platform was set up and the vacancy generation behavior for a wide range of incident ion and target combinations was examined by using the full cascade (FC) and fast calculation damage (QC) options of the stop and material ion range codes;

[0058] Step 1-2: In this embodiment, the GaN HEMT model includes 4 layers.

[0059] The thickness of the AlGaN barrier layer is set to 15 nm, the thickness of the channel layer is set to 200 nm, and the thickness of the buffer layer is set to 2000 nm. 1332 MeV Ta ions are simulated to be incident vertically on the device.

[0060] Step 1-3: In GaN HEMT devices, the 2DEG at the heterojunction interface is the main factor affecting the device.

[0061] In SRIM simulation, it is necessary to consider the defect center near the heterojunction interface. According to the number of vacancies generated by Ta particles within a certain depth of the material, the vacancy density at a certain depth under different radiation fluences can be calculated to provide certain parameter inputs for the leakage model in TCAD. Under 1332MeV Ta ion irradiation, the Ga vacancies in AlGaN near the AlGaN / GaN heterojunction are: When the ion injection volume is 1×10 7 cm -2 The Ga vacancy density generated under this injection is: 5×10 -3 ×10 8 ×1×10 7 =5×10 12 cm -3 .

[0062] Table 1 below shows the number of vacancies generated near the heterojunction interface under Ta ion irradiation.

[0063] Table 1: Number of AlGaN / GaN vacancies in GaN HEMT devices injected with 1332MeV Ta ions

[0064]

[0065] Then, the structural diagram of GaN HEMT calculated by TCAD software is shown as follows: Figure 3 As shown, unit cell simulation is adopted, and the specific steps are as follows:

[0066] Step 2-1: According to the design and process parameters of the GaN HEMT device, the GaN HEMT device is modeled by a semiconductor device two-dimensional modeling tool to obtain a two-dimensional model of the GaN HEMT device, and then meshing is performed to generate a meshed device structure, and the mesh structure matches the structure of the device;

[0067] Step 2-2: Optimize and calibrate the device's substrate, channel layer, barrier layer, electrode size, concentration and other process parameters, ultimately making the electrical simulation results consistent with the device product manual.

[0068] like Figure 4 As shown in FIG. 1 , the transfer characteristic curve obtained by simulating the electrical characteristics of the GaN HEMT device after optimization, the threshold voltage is about 2.5V; Figure 5 As shown, it is the off-state leakage characteristic curve obtained after the GaN HEMT device is optimized. The gate bias voltage is 0V and the leakage current value is about 1μA.

[0069] The specific steps of the optimization method are as follows: the size and doping concentration of each area of ​​the device are changed in a variable manner, and the amplitude of the change in the simulation curve is used to determine whether the parameter has a large impact on the device characteristics, and the parameters with significant impact are found as the preferred variables for optimization, and then these variables are adjusted to achieve simple and efficient optimization calibration of the simulation results.

[0070] Next, the vacancy defect data calculated in step 1 is input into the electrical model established in step 2. At the same time, according to the formula derivation, the parameters related to heavy ion ionization are adjusted to establish the corresponding leakage degradation model of the wide bandgap semiconductor device.

[0071] Step 3-1: In the GaN HEMT device, the vacancy defect calculation results in step 1 are input into the electrical model established in step 2 to obtain the defect model after heavy ion irradiation. The defect model is the basis for establishing the leakage degradation model.

[0072] Step 3-2: In the case of leakage degradation caused by heavy ion injection, the avalanche effect at the sensitive position of the device causes ionized charge deposition, which causes a sharp increase in current under the action of the electric field. According to the ionization coefficient α (α = α n +α p ) and avalanche effect factor The relationship between the leakage current of wide bandgap semiconductor devices and the electron ionization coefficient α n 、Hole ionization coefficient α p Therefore, based on the defect model, the Selberherr Impact Ionization Model is introduced, which is based on the formula:

[0073]

[0074] In the leakage model of wide bandgap semiconductor devices, the mobility coefficient A n Related to the carrier mobility under high electric field, the electric field coefficient B nIt is related to the electric field strength that activates the ionization effect. In the process of radiation particles causing leakage in the device, by optimizing the physical parameters in the single particle leakage model, it can be well fitted with the experimental results, and the leakage model of wide bandgap semiconductor devices is obtained, such as Figure 6 shown.

[0075] Finally, the damage mechanism analysis is carried out based on the leakage degradation model of power devices.

[0076] In this embodiment, based on the leakage model, the changes of microscopic physical parameters under different biases over time are extracted, such as Figure 7 and Figure 8 As shown, Figure 7 is the gate leakage current curve of the device after heavy ion irradiation, Figure 8 This is the gate electric field curve after heavy ion irradiation of the device.

[0077] It can be observed that the greater the gate bias, the greater the radiation damage and the more serious the device leakage. According to the distribution of the electric field, it can be found that the gate area of ​​the device is severely damaged, which is a sensitive area of ​​the device. In subsequent work, this area can be targeted for reinforcement and optimization to improve the device's radiation resistance.

[0078] In summary, the present invention provides a power device leakage current damage simulation method based on TCAD software, targeting the radiation damage caused by heavy ions in space to power devices. The TCAD software is innovatively used to establish a single-particle leakage model. On this basis, the leakage current change trend of the power device after irradiation is simulated, and the evolution process of important electrical parameters such as the internal electric field strength, leakage current density, and temperature of the device after particle irradiation with time is realized. The leakage current damage mechanism of the power device is further studied in a more targeted manner, thereby providing a research basis for the device's resistance to radiation damage.

[0079] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A simulation analysis method for single particle leakage of wide bandgap semiconductor devices, characterized in that: The steps include: S1. Construct a geometric model of the power device to be simulated and obtain the vacancy defect density of the power device; S2. Perform two-dimensional modeling and meshing of the power device to be simulated by using a two-dimensional modeling tool for semiconductor devices; optimize the two-dimensional model of the power device to be simulated, establish an electrical model of the power device, and fit the electrical curve of the power device; S3, inputting the vacancy defect density of the power device into the electrical model of step S2, establishing a defect model, introducing an impact ionization model after high-energy particle incidence based on the relationship between the ionization coefficient and the avalanche effect factor, optimizing the mobility and leakage degradation parameters, and establishing a corresponding leakage degradation model for the power device; S4. Based on the leakage degradation model of power devices, damage mechanism analysis is carried out. By changing the influencing parameters in the radiation process, the changes of the microscopic physical parameters of the power devices over time are extracted to strengthen and optimize the power devices.

2. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 1, characterized in that: In step S1, the power device is a semiconductor device with different wide bandgap. According to the design and process parameters of the power device to be simulated, a geometric model of the power device is constructed by Monte Carlo software, and a complete cascade collision physics process is used for simulation to simulate the damage process of the power device after particle irradiation, and calculate the vacancy defect density of the power device.

3. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 2, characterized in that: The method for calculating the defect density of the power device is as follows: in a Monte Carlo software simulation, based on the defect center near the heterojunction interface and according to the number of vacancies generated by irradiated particles within a certain depth of the material, the vacancy density at a certain depth under different radiation fluences is calculated to obtain the vacancy defect density at the sensitive position of the power device.

4. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 1, characterized in that: In step S2, the semiconductor device two-dimensional modeling tool is TCAD software, and a two-dimensional model of the power device to be simulated is obtained through the TCAD software, and meshing is performed to generate a meshed structure matching the power device structure.

5. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 1, characterized in that: In step S2, the generated two-dimensional model of the power device is optimized, the process parameters of the power device are calibrated, the typical electrical curve of the power device is extracted, and the typical electrical curve is fitted with the corresponding electrical curve in the power device product manual, so that the electrical simulation result is consistent with the device product manual; The process parameters include: substrate, drift region, channel layer, barrier layer, body region and source region size, concentration; the typical electrical curves include: transfer characteristic curve, off-state leakage characteristic curve.

6. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 5, characterized in that: In step S2, the two-dimensional model of the power device is optimized by changing the process parameters of each area of ​​the power device in a variable manner, judging the influence of each process parameter on the characteristics of the power device by the amplitude of change of the simulation curve, taking the process parameter with the greatest influence as the preferred variable for optimization, and achieving optimal calibration of the simulation results by adjusting the preferred variable.

7. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 5, characterized in that: In step S3, a leakage degradation model corresponding to the power device is established, including the following sub-steps: S3.

1. Input the vacancy defect data calculated in step S1 into the electrical model established in step S2, adjust the parameters of heavy ion ionization, and establish a power device defect model; S3.

2. In the leakage degradation caused by heavy ion incidence, the sensitive position of the power device produces an avalanche effect, causing ionized charge deposition. Under the action of the electric field, the current rises sharply. According to the relationship between the ionization coefficient α and the avalanche effect factor M, an electron-hole generation rate model is constructed based on the power device defect model; S3.

3. The leakage value of the power device is proportional to the electron ionization coefficient and the hole ionization coefficient. The material collision ionization coefficient, the critical electric field coefficient and the leakage damage related parameters are optimized to establish a collision ionization model after high-energy particle incidence; S3.

4. After fitting the impact ionization model with the experimental results, the leakage model of the power device is obtained.

8. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 7, characterized in that: In step S3.2, the ionization coefficient α is expressed as follows: α＝α n +α p Among them, α n , α p represent the electron ionization coefficient and the hole ionization coefficient respectively; The avalanche effect factor M is expressed as follows: Where d represents the length of the electric field action area; The electron-hole generation rate model is expressed as follows: Among them, J n , J p They represent the electron current density and the hole current density respectively, q represents the charge of the electron, and G represents the generation rate of electron-hole pairs.

9. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 8, characterized in that: In step S3.3, the collision ionization model is expressed as follows: Among them, A n is the mobility coefficient, B n is the electric field coefficient, n=1,2; E represents the critical electric field coefficient.

10. The simulation analysis method for single particle leakage of wide bandgap semiconductor devices according to claim 8, characterized in that: In step S3.4, the leakage model of the power device is constructed based on the correlation between the mobility coefficient and the carrier mobility under high electric field, and the correlation between the electric field coefficient and the electric field strength of the activated ionization effect, and is used to simulate the leakage effect of the power device under different energy particles and different bias voltage conditions; Conduct leakage damage mechanism analysis, and simulate the leakage current variation trend of power devices after irradiation to realize the evolution of internal electrical parameters of power devices over time after particle irradiation; The internal electrical parameters include: electric field strength, leakage current density, and temperature.

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