Electronic component, electronic equipment and preparation method of electronic component

Abstract

The invention provides an electronic component, electronic equipment and a preparation method of the electronic component, the electronic equipment comprises a first device, a second device and at least two leads, the first device comprises a first bonding pad, and the second device comprises a second bonding pad. The at least two leads comprise a first lead and a second lead, the first lead is welded between the first bonding pad and the second bonding pad, and the second lead is also welded between the first bonding pad and the second bonding pad. The first lead and the second lead are connected in parallel, so that parasitic inductance caused by the leads is reduced, the operation bandwidth of the electronic assembly is improved, the signal transmission rate of the electronic assembly is improved, and the electronic assembly has good performance. A welding spot between the first lead and the first bonding pad and a welding spot between the second lead and the first bonding pad are stacked. The size of the first bonding pad can be designed to be small, which is beneficial for increasing the density of the bonding pad of the first device and increasing the density of the signal transmission line of the first device.

Description

Technical Field

[0001] The present application relates to the technical field of electronic equipment, and in particular to an electronic component, an electronic device, and a method for preparing the electronic component. Background Art

[0002] In the semiconductor field, many chips and substrates are packaged to form chip modules, which are applied to electronic devices in the form of modules. In the process of chip packaging, wire bonding is used to connect chips to chips and chips to substrates. Specifically, wire bonding is a process in the chip packaging industry, which is usually a technology that uses thinner metal wires to connect chips to chips or chips to substrates to transmit signals through metal wires.

[0003] As communication rates get higher and higher, high-frequency signals are prone to parasitic inductance at the lead position, affecting the quality of high-frequency signals. In the field of optoelectronic packaging, parasitic inductance can reduce the operating bandwidth of driver chips and semiconductor lasers, thereby affecting the performance of optoelectronic devices.

[0004] Traditional solutions to the problem of parasitic inductance include increasing the lead diameter, reducing the lead length, connecting multiple leads in parallel, etc., but these solutions also bring limitations. For example, increasing the lead diameter will increase the wire bonding process parameters, and the requirements for the pads and substrate layer materials will also increase simultaneously. Connecting multiple leads in parallel will inevitably increase the required lead pad area, resulting in an increase in the overall size of the device, which does not meet the requirements of miniaturization. Summary of the invention

[0005] The present application provides an electronic component, an electronic device and a method for preparing the electronic component, which reduces the parasitic inductance caused by the lead wire, improves the operating bandwidth of the electronic component, reduces the pad size, improves the pad density of the first device, and increases the number of signals transmitted by the first device.

[0006] In the first aspect, the present application provides an electronic component. The electronic device includes a first device, a second device and at least two leads, the first device includes a first pad, and the second device includes a second pad. The lead is welded between the first pad and the second pad to achieve electrical connection between the first device and the second device. Specifically, the at least two leads include a first lead and a second lead, the first lead is welded between the first pad and the second pad, the second lead is also welded between the first pad and the second pad, and the first lead and the second lead are connected in parallel, thereby reducing the parasitic inductance caused by the lead, improving the operating bandwidth of the electronic component, improving the signal transmission rate of the electronic component, etc., so that the electronic component has better performance. In this solution, the diameter of the lead can be designed to be smaller, thereby reducing the risk of damage to the first pad. The solder joint between the first lead and the first pad and the solder joint between the second lead and the first pad are stacked. In this solution, the size of the first pad can be designed to be smaller, which is conducive to increasing the density of the pads of the first device, increasing the number of signals transmitted by the first device, and increasing the density of the signal transmission line of the first device.

[0007] In a further technical solution, the solder joint between the first lead and the second pad and the solder joint between the second lead and the second pad are stacked. In this solution, the size of the second pad can be designed to be smaller, and the density of the pads provided on the second device can be higher, which is conducive to increasing the number of signals transmitted by the second device and increasing the density of the signal transmission line of the second device.

[0008] In another technical solution, the solder joint between the first lead and the second pad and the solder joint between the second lead and the second pad are arranged side by side on the surface of the second pad. The solder joints between at least two leads and the second pad are arranged in a row on the surface of the second pad. This solution is conducive to simplifying the wire bonding process of the first device and the second device.

[0009] Specifically, the lead wire includes a linear body and a solder ball, the solder ball and the linear body are an integrally formed structure, and the solder ball is located at one end of the linear body, the end of the lead wire with the solder ball is a first bonding point, and the other end is a second bonding point. Using the metal lead wire for wire bonding is conducive to improving the bonding strength.

[0010] When the first device and the second device are connected by welding using the lead wire having the solder ball and the linear body, the lead wire can have a variety of arrangements. For example, in a specific technical solution, the first bonding point of the first lead wire is welded to the first pad, and the first bonding point of the second lead wire is welded to the first pad. Of the two adjacent leads, the first bonding point of one lead wire is welded to the first pad, and the first bonding point of the other lead wire is welded to the first pad.

[0011] In another specific technical solution, of two adjacent leads, the first bonding point of one lead is welded to the first pad, and the second bonding point is welded to the second pad; the second bonding point of the other lead is welded to the first pad, and the first bonding point is welded to the second pad. The first bonding points of multiple leads are stacked on the first pad, and the second bonding points of multiple leads are welded to the second pad.

[0012] In order to improve the reliability of the connection between the first device and the second device. When the second bonding point is directly welded to the first pad, there is a welding bump between the second bonding point and the first pad. When the second bonding point is directly welded to the second pad, there is a welding bump between the second bonding point and the second pad. In short, the second bonding point of the lead is the end of the linear body away from the solder ball, which is small in size. Direct welding to the pad can easily cause damage to the pad. In the technical solution of the present application, the second bonding point is welded to the pad via a welding bump, which is conducive to improving the reliability of welding between the second bonding point of the lead and the pad.

[0013] When the lead is specifically formed, the linear body is tilted toward the first pad within a preset length of the side where the linear body is connected to the solder ball, so that the lead is relatively flat above the solder ball, which facilitates stacking and welding other leads above the first bonding point of the lead without causing skewness. This improves the reliability of welding between adjacent leads, and prevents short circuits from occurring when stacking the leads.

[0014] In addition, the arc height of the linear body of the lead is less than or equal to 50um. The lower the arc height of the lead, the smaller the parasitic inductance, which is also conducive to improving the operating bandwidth of the electronic component, improving the signal transmission rate of the electronic component, etc., so that the electronic component has better performance. In addition, this solution makes the lead relatively flat near the second bonding point, which is convenient for stacking and welding other leads above the second bonding point of the lead, and it is not easy to be skewed. It is conducive to improving the reliability of welding between adjacent leads, and short circuits are not easy to occur when stacking wires.

[0015] In the optional technical solutions, there are multiple options for the types of the first device and the second device in the electronic component. In one technical solution, the first device is a photodetector and the second device is a transimpedance amplifier; or, the first device is a driver and the second device is a modulator; or, the first device is a transimpedance amplifier and the second device is an optical chip; or, the first device is a chip and the second device is a substrate.

[0016] In a second aspect, the present application provides an electronic device. The electronic device includes a circuit board, an electronic device, and the electronic assembly provided in the first aspect above, the electronic device is electrically connected to the electronic assembly, and the electronic device and the electronic assembly are arranged on the circuit board. The electronic assembly has a wide bandwidth and good performance, so the performance of the electronic device is also high.

[0017] In a third aspect, the present application further provides a method for preparing an electronic device, wherein the electronic component prepared by the preparation method comprises a first device, a second device, a first lead and a second lead, wherein the first device comprises a first pad, and the second device comprises a second pad. The preparation method specifically comprises:

[0018] One end of the first lead is welded to the first pad to form a first solder joint, and the other end is welded to the second pad to form a second solder joint; one end of the second lead is welded to the first solder joint, and the other end is welded to the second solder joint; the first lead and the second lead are connected in parallel. The preparation method is used to reduce the parasitic inductance caused by the lead, improve the operating bandwidth of the electronic component, improve the signal transmission rate of the electronic component, etc., so that the electronic component has better performance. In this scheme, the diameter of the lead can be designed to be smaller, thereby reducing the risk of damage to the first pad. There is a solder joint between a lead and the first pad, and the above-mentioned solder joints of at least two leads are stacked. In this scheme, the size of the first pad can be designed to be smaller, which is conducive to increasing the density of the pads of the first device, increasing the number of signals transmitted by the first device, and increasing the density of the signal transmission line of the first device.

[0019] In a fourth aspect, the present application further provides a method for preparing an electronic component, wherein the electronic component prepared by the preparation method comprises a first device, a second device, a first lead and a second lead, wherein the first device comprises a first pad, and the second device comprises a second pad; the preparation method specifically comprises:

[0020] One end of the first lead is welded to the first pad to form a first welding point, and the other end is welded to the second pad to form a second welding point; one end of the second lead is welded to the first welding point, and the other end is welded to the second pad to form a third welding point, and the second welding point and the third welding point are arranged side by side on the surface of the second pad; the first lead and the second lead are connected in parallel. While reducing the parasitic inductance of the lead, the difficulty of the bonding process can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of the structure of an electronic component in an embodiment of the present application;

[0022] Figure 2 A schematic diagram of the structure of an electronic device in an embodiment of the present application;

[0023] Figure 3 It is an eye diagram comparison diagram for electronic equipment;

[0024] Figure 4 A working status comparison diagram of an electronic component;

[0025] Figure 5 A schematic diagram of the structure of an electronic component in an embodiment of the present application;

[0026] Figure 6 A schematic diagram of a top view of the structure of an electronic component in an embodiment of the present application;

[0027] Figure 7 A schematic diagram of a top view of the structure of an electronic component in an embodiment of the present application;

[0028] Figure 8 A schematic diagram of the structure of an electronic component in an embodiment of the present application;

[0029] Fig. 9 A schematic diagram of the structure of a lead wire in an embodiment of the present application;

[0030] Fig.10 A schematic diagram of a preparation process of an electronic component in an embodiment of the present application;

[0031] Fig.11 A schematic diagram of a preparation process of an electronic component in an embodiment of the present application;

[0032] Fig.12 A schematic diagram of a preparation process of an electronic component in an embodiment of the present application;

[0033] Fig.13 This is a schematic diagram of a preparation process of an electronic component in an embodiment of the present application.

[0034] Reference numerals:

[0035] 1-first device; 11-first pad;

[0036] 2-a second device; 21-a second pad;

[0037] 3-lead; 31-linear body;

[0038] 32- solder ball; 33- first lead;

[0039] 34-second lead; 4-welding bump;

[0040] 41-a first welding bump; 42-a second welding bump;

[0041] 01-first welding point; 02-second welding point;

[0042] 03-The third welding point. DETAILED DESCRIPTION

[0043] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

[0044] The terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to be limiting of the present application. As used in the specification and appended claims of the present application, the singular expressions "a", "an", "said", "above", "the" and "this" are intended to also include expressions such as "one or more", unless there is a clear contrary indication in the context.

[0045] References to "one embodiment" or "a specific embodiment" described in this specification mean that one or more embodiments of the present application include a particular feature, structure or characteristic described in conjunction with the embodiment. The terms "include", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized.

[0046] In order to facilitate understanding of the electronic components, electronic devices and methods for preparing electronic components provided in the embodiments of the present application, their application scenarios are first introduced below.

[0047] The electronic device in the embodiment of the present application can be a communication device (such as a router), a computing device (such as a server), a network device (such as a switch) or a storage device (such as a storage array) or other electronic devices, or it can also be an electronic device such as an optical module, a vehicle-mounted device or a terminal device. The present application does not limit the specific type of electronic device, as long as the electronic device includes electronic components connected by wire bonding technology, the technical solution provided by the present application can be adopted.

[0048] In a specific embodiment, the electronic device includes a circuit board, an electronic device and an electronic assembly, the electronic device and the electronic assembly are electrically connected, and the electronic device and the electronic assembly are arranged on the circuit board to realize the functions of the electronic device. The electronic assembly includes a first device and a second device, and the first device and the second device are connected by a wire bonding process.

[0049] The types of the first device and the second device included in the electronic assembly provided in the present application have a variety of options and combinations. For example, in one embodiment, the above-mentioned first device is a photodetector, and the second device is a transimpedance amplifier, and the above-mentioned photodetector and the transimpedance amplifier are connected by wires through a wire bonding process. Or, in one embodiment, the above-mentioned first device is a driver, and the second device is a modulator, and the above-mentioned driver and modulator are connected by wires through a wire bonding process. Or, in one embodiment, the above-mentioned first device is a transimpedance amplifier, and the second device is an electrical chip (ODSP), and the above-mentioned transimpedance amplifier and the electrical chip are connected by wires through a wire bonding process. In the above-mentioned several specific embodiments, the first device and the second device are both chip-type devices. In other embodiments, the above-mentioned first device is an optical chip, and the second device is a substrate, or the above-mentioned first device is an electrical chip, and the second device is a substrate. In short, the above-mentioned chip and the substrate are connected by wires through a wire bonding process, that is, the first device and the second device in the embodiment of the present application can also be a chip and a substrate, respectively, and the chip and the substrate can be connected using the above-mentioned wire bonding scheme.

[0050] Figure 1 is a schematic diagram of the structure of an electronic component in an embodiment of the present application, such as Figure 1As shown, in one embodiment, the electronic component includes a first device 1, a second device 2 and at least two leads 3. The first device 1 includes a first pad 11, and the second device 2 includes a second pad 21. The lead 3 is welded between the first pad 11 and the second pad 21. Specifically, the lead 3 includes a first lead 33 and a second lead 34, the first lead 33 is welded between the first pad 11 and the second pad 21, and the second lead 34 is also welded between the first pad 11 and the second pad 21. One end of the lead 3 is welded to the first pad 11, and the other end is welded to the second pad 21 to achieve electrical connection between the first device 1 and the second device 2, for example, signal transmission can be achieved between the first device 1 and the second device 2. The at least two leads 3 are connected in parallel to reduce the parasitic inductance caused by the lead 3, improve the operating bandwidth of the electronic component, improve the signal transmission rate of the electronic component, etc., so that the electronic component has better performance. In this solution, the diameter of the lead 3 can be designed to be smaller, thereby reducing the risk of damage to the first pad 11. Further, the solder joints between at least two leads 3 and the first pad 11 are stacked in sequence, specifically, the solder joints between the first lead 33 and the first pad 11 and the solder joints between the second lead 34 and the first pad 11 are stacked. The solder joints between the above-mentioned leads 3 and the first pad 11 do not refer to solder joints generated by directly welding the lead 3 to the first pad 11, but solder joints at one end of the lead 3 used for welding to the first pad 11. In this solution, the size of the first pad 11 can be designed to be smaller, which is conducive to increasing the density of the pads of the first device 1, increasing the number of signals transmitted by the first device 1, and increasing the density of the signal transmission line of the first device 1.

[0051] Please continue to refer to Figure 1 In one embodiment, on one side of the second pad 21, the solder joints between at least two leads 3 and the second pad 21 are also stacked in sequence, so that the at least two leads 3 are arranged in sequence in a direction perpendicular to the surface of the first pad 11. There is a solder joint between one lead 3 and the second pad 21, and the solder joints of at least two leads 3 are stacked. Specifically, the solder joint between the first lead 33 and the second pad 21 is stacked with the solder joint between the second lead 34 and the second pad 21. The solder joint between the lead 3 and the second pad 21 does not refer to the solder joint generated by directly welding the lead 3 to the second pad 21, but the solder joint at one end of the lead 3 used for welding to the second pad 21. The size of the second pad 21 can be designed to be smaller, and the density of the pads set on the second device 2 can be higher, which is conducive to increasing the number of signals transmitted by the second device 2 and increasing the density of the signal transmission line of the second device 2.

[0052] Figure 2 is a schematic diagram of a structure of an electronic device in an embodiment of the present application, such as Figure 2As shown, taking the electronic device as an optical module as an example, the optical module includes a digital signal processor, a transimpedance amplifier, a photodetector, a driver and a modulator, wherein the photodetector, the transimpedance amplifier and the digital signal processor are connected in sequence, and the digital signal processor, the driver group and the modulator are connected in sequence. The photodetector and the transimpedance amplifier are respectively used as the first device and the second device, and are connected by leads using the above scheme. In addition, the driver group and the modulator can also be used as the first device and the second device, and are connected by leads using the above scheme. Figure 3 It is an eye diagram comparison diagram for electronic equipment, such as Figure 3 As shown, the eye diagram of the optical module in the prior art is shown in the left figure, and the eye diagram provided by the embodiment of the present application is shown in the right figure. It can be seen that the technical solution of the present application has a relatively obvious improvement in the eye diagram.

[0053] Figure 4 A comparison chart of the working status of electronic components, such as Figure 4 As shown in the figure, the dotted line is a schematic diagram of a working state of the electronic component in the prior art, and the solid line is a schematic diagram of a working state of the electronic component in the embodiment of the present application. It can be seen that the cutoff frequency of the electronic component is increased from 80 GHz to 120 GHz, and the working bandwidth is significantly improved.

[0054] Figure 5 is a schematic diagram of the structure of an electronic component in an embodiment of the present application, Figure 6 is a schematic diagram of a top view of the electronic component in an embodiment of the present application, such as Figure 5 and Figure 6 As shown, in one embodiment, on one side of the first pad 11, the solder joints between at least two of the above-mentioned leads 3 and the first pad 11 are stacked in sequence. On one side of the second pad 21, the solder joints between at least two of the above-mentioned leads 3 and the second pad 21 are lined up on the surface of the second pad 21. That is, the solder joints between the first lead 33 and the first pad 11 and the solder joints between the second lead 34 and the first pad 11 are stacked, and the solder joints between the first lead 33 and the second pad 21 and the solder joints between the second lead 34 and the second pad 21 are side by side. In some application scenarios, if the size of the second pad 21 is relatively large, this solution can also be adopted to simplify the wire bonding process of the first device 1 and the second device 2.

[0055] like Figure 6 As shown, in a specific embodiment, the direction in which the solder joints between the at least two leads 3 and the second pad 21 are arranged in a line on the surface of the second pad 21 is basically consistent with the extension direction of the lead 3, or in other words, the direction in which the solder joints between the at least two leads 3 and the second pad 21 are arranged in a line on the surface of the second pad 21 is consistent with the arrangement direction of the first device 1 and the second device 2, so that the leads 3 remain arranged in a direction perpendicular to the surface of the first pad 11.

[0056] Figure 7 is a schematic diagram of a top view of the electronic component in an embodiment of the present application, such as Figure 7 As shown, in another embodiment, the direction in which the solder joints between the at least two leads 3 and the second pad 21 are arranged in a line on the surface of the second pad 21 forms a certain angle with the arrangement direction of the first device 1 and the second device 2. In a possible embodiment, the certain angle may be 90°, and in other embodiments, the certain angle may also be 30°, 35°, 38°, 40°, 42°, 45°, 50°, 55°, 60°, 65°, 68°, 70°, 73°, 75°, 80° or 85°, etc. In short, the wire bonding connection can be performed according to the actual structure or layout of the product.

[0057] Please refer to Figure 1 and Figure 5 The lead 3 in the present application includes a linear body 31 and a solder ball 32. The solder ball 32 and the linear body 31 are an integrally formed structure, and the solder ball 32 is located at one end of the linear body 31. Specifically, the linear body 31 can be generated by stretching from a spherical metal ball to form a metal lead. One end of the lead 3 having the solder ball 32 is a first bonding point, and the other wedge-shaped end is a second bonding point. Specifically, the second bonding point is located at one end of the linear body 31 away from the solder ball 32.

[0058] Please refer to Figure 1 In one embodiment, when the above-mentioned lead 3 is used to connect the first pad 11 and the second pad 21, of the two adjacent leads 3, the first bonding point of one lead 3 is welded to the first pad 11, and the second bonding point is welded to the second pad 21. The second bonding point of the other lead 3 is welded to the first pad 11, and the first bonding point is connected to the second pad 21. For example, the first bonding point of the first lead 33 is welded to the first pad 11, and the second bonding point is welded to the second pad 21; the first bonding point of the second lead 34 is welded to the first pad 11, and the second bonding point is welded to the second pad 21. In this embodiment, in the same pad, the first bonding points and the second bonding points of multiple leads 3 are alternately stacked and welded in sequence.

[0059] Figure 8 is a schematic diagram of the structure of an electronic component in an embodiment of the present application, such as Figure 8 As shown, in one embodiment, of two adjacent leads, the first bonding point of one lead 3 is welded to the first pad 11, and the second bonding point is welded to the second pad 21; the first bonding point of the other lead 3 is also welded to the first pad 11, and the second bonding point is welded to the second pad 21. The first bonding points of multiple leads are stacked on the first pad 11, and the second bonding points of multiple leads 3 are welded to the second pad 21.

[0060] Since the size of the second bonding point is small, when the second bonding point of the lead 3 is directly welded to the first pad 11, there is a welding bump between the second bonding point of the lead 3 and the first pad 11, and the welding bump is welded to the first pad 11, thereby improving the reliability of welding between the second bonding point and the first pad 11. Alternatively, the second bonding point of the lead 3 can also be welded to the first pad 11 through the solder ball 32 of the adjacent lead 3. In short, there is a certain connection between the second bonding point of any lead 3 and the first pad 11, rather than being directly welded to the first pad 11.

[0061] Similarly, when the second bonding point of the lead 3 is directly welded to the second pad 21, there is a welding bump between the second bonding point of the lead 3 and the second pad 21, and the welding bump is welded to the second pad 21, thereby improving the reliability of the welding between the second bonding point and the second pad 21. Alternatively, the second bonding point of the lead 3 can also be welded to the second pad 21 through the solder ball 32 of the adjacent lead 3. In short, there is a certain connection between the second bonding point of any lead 3 and the second pad 21, rather than being directly welded to the first pad 11.

[0062] Fig. 9 Schematic diagram of a structure of a lead wire in an embodiment of the present application, such as Fig. 9 As shown, in one embodiment, the solder ball 32 of the lead 3 is welded to the first pad 11, and within the preset length of the side where the linear body 31 is connected to the solder ball 32, the linear body 31 is inclined toward the first pad 11. Specifically, when forming the lead 3, the welding head of the wire bonding machine moves in multiple steps to form the inclined structure of the linear body 31, so that the lead 3 is relatively flat above the solder ball 32, which is convenient for stacking and welding other leads 3 above the first bonding point of the lead 3, and is not prone to skew. The reliability of welding between adjacent leads 3 is improved, and short circuits are not prone to occur when stacking wires.

[0063] Please continue to refer to Fig. 9 In a specific embodiment, the arc height h of the linear body 31 of the lead 3 is less than or equal to 50 μm. In this solution, the arc height of the lead 3 is low and the parasitic inductance is small. This solution is also beneficial to improving the operating bandwidth of the electronic component, improving the signal transmission rate of the electronic component, etc., so that the electronic component has better performance. In addition, this solution makes the lead 3 relatively flat near the second bonding point, which is convenient for stacking and welding other leads 3 above the second bonding point of the lead 3, and it is not easy to be skewed. It is beneficial to improve the reliability of welding between adjacent leads 3, and short circuit is not easy to occur when stacking wires.

[0064] Based on the same inventive concept, the present application also provides a method for preparing an electronic component, wherein the electronic component prepared by the preparation method includes a first device 1, a second device 2, a first lead 33, and a second lead 34, wherein the first device 1 includes a first pad 11, and the second device 2 includes a second pad 21. Specifically, the electronic component prepared by the preparation method is the electronic component shown in the above embodiment. Fig.10 is a schematic diagram of a preparation process of an electronic component in an embodiment of the present application, such as Fig.10 As shown, the above preparation method specifically comprises:

[0065] One end of the first lead 33 is welded to the first pad 11 to form a first welding point 01, and the other end is welded to the second pad 21 to form a second welding point 02;

[0066] One end of the second lead wire 34 is welded to the first welding point 01, and the other end is welded to the second welding point 02;

[0067] The first lead line 33 and the second lead line 34 are connected in parallel.

[0068] In the electronic component prepared by this scheme, two leads 3 are connected in parallel to reduce the parasitic inductance caused by the leads 3, improve the operating bandwidth of the electronic component, improve the signal transmission rate of the electronic component, etc., so that the electronic component has better performance. In this scheme, the diameter of the lead 3 can be designed to be smaller, thereby reducing the risk of damage to the first pad 11. Furthermore, the two leads 3 are stacked in sequence at the solder joints of the first pad 11 and stacked in sequence at the solder joints of the second pad 21. The size of the first pad 11 and the second pad 21 can be designed to be smaller, which is conducive to increasing the density of the pads of the first device 1, and increasing the density of the pads of the second device 2, increasing the number of signals transmitted by the first device 1 and the second device 2, and increasing the density of the signal transmission lines of the first device 1 and the second device 2.

[0069] In one embodiment, the lead 3 includes the linear body 31 and a sphere, the solder ball 32 of the first lead 33 is welded to the first pad 11 , and one end of the linear body 31 away from the solder ball 32 is welded to the second pad 21 . Fig.11 is a schematic diagram of a preparation process of an electronic component in an embodiment of the present application, such as Fig.11 As shown, one end of the first lead 33 is welded to the first pad 11 to form a first welding point 01, and the other end is welded to the second pad 21 to form a second welding point 02; the above also includes:

[0070] A solder bump is soldered to the second pad 21 .

[0071] One end of the first lead 33 is welded to the first solder pad 11 to form a first solder point 01, and the other end is welded to the second solder pad 21 to form a second solder point 02. Specifically, one end of the first lead 33 having a solder ball 32 is welded to the first solder pad 11 to form the first solder point 01, and one end of the linear body 31 of the first lead 33 away from the solder ball 32 is welded to the solder bump of the second solder pad 21 to form the second solder point 02, so as to improve the reliability of welding between the linear body 31 and the second solder pad 21.

[0072] In another embodiment, the lead 3 includes the linear body 31 and the sphere, the solder ball 32 of the first lead 33 is welded to the second pad 21, and one end of the linear body 31 away from the solder ball 32 is welded to the first pad 11. Similarly, one end of the first lead 33 is welded to the first pad 11 to form a first solder joint 01, and the other end is welded to the second pad 21 to form a second solder joint 02; the above also includes:

[0073] A solder bump is soldered to the first pad 11 .

[0074] One end of the first lead 33 is welded to the first solder pad 11 to form a first solder point 01, and the other end is welded to the second solder pad 21 to form a second solder point 02, specifically including: welding the end of the linear body 31 of the first lead 33 away from the solder ball 32 to the solder bump of the first solder pad 11 to form the first solder point 01, and welding the end of the first lead 33 with the solder ball 32 to the second solder pad 21 to form the second solder point 02, so as to improve the reliability of welding the linear body 31 and the first solder pad 11.

[0075] Based on the same inventive concept, the present application also provides a method for preparing an electronic component, wherein the electronic component prepared by the preparation method includes a first device 1, a second device 2, a first lead 33, and a second lead 34, wherein the first device 1 includes a first pad 11, and the second device 2 includes a second pad 21. Specifically, the electronic component prepared by the preparation method is the electronic component shown in the above embodiment. Fig.12 is a schematic diagram of a preparation process of an electronic component in an embodiment of the present application, such as Fig.12 As shown, the above preparation method specifically comprises:

[0076] One end of the first lead 33 is welded to the first pad 11 to form a first welding point 01, and the other end is welded to the second pad 21 to form a second welding point 02;

[0077] One end of the second lead 34 is welded to the first welding point 01, and the other end is welded to the second welding pad 21 to form a third welding point 03, and the second welding point 02 and the third welding point 03 are arranged side by side on the surface of the second welding pad 21;

[0078] The first lead line 33 and the second lead line 34 are connected in parallel.

[0079] Specifically, the second solder joint 02 and the third solder joint 03 are arranged side by side. In some application scenarios, if the size of the second solder pad 21 is relatively large, this solution can also be adopted to simplify the wire bonding process of the first device 1 and the second device 2.

[0080] In one embodiment, the lead 3 includes the linear body 31 and a sphere, the solder ball 32 of the first lead 33 is welded to the first pad 11 , and one end of the linear body 31 away from the solder ball 32 is welded to the second pad 21 . Fig.13 is a schematic diagram of a preparation process of an electronic component in an embodiment of the present application, such as Fig.13 As shown, one end of the first lead 33 is welded to the first pad 11 to form a first welding point 01, and the other end is welded to the second pad 21 to form a second welding point 02; the above also includes:

[0081] A first welding bump 41 and a second welding bump 42 are welded to the second welding pad 21 , and the first welding bump 41 and the second welding bump 42 are arranged side by side.

[0082] One end of the first lead 33 is welded to the first solder pad 11 to form a first solder point 01, and the other end is welded to the second solder pad 21 to form a second solder point 02, specifically including: welding one end of the first lead 33 having the solder ball 32 to the first solder pad 11 to form the first solder point 01, and welding one end of the linear body 31 of the first lead 33 away from the solder ball 32 to the first solder bump 41 of the second solder pad 21 to form the second solder point 02, so as to improve the reliability of the welding between the linear body 31 and the second solder pad 21.

[0083] One end of the second lead 34 is welded to the first welding point 01 , and the other end is welded to the second welding pad 21 to form the third welding point 03 , specifically including: one end of the second lead 34 is welded to the first welding point 01 , and the other end is welded to the second welding bump 42 of the second welding pad 21 to form the third welding point 03 .

[0084] In another embodiment, the lead 3 includes the linear body 31 and the sphere, the solder ball 32 of the first lead 33 is welded to the second pad 21, and one end of the linear body 31 away from the solder ball 32 is welded to the first pad 11. Similarly, one end of the first lead 33 is welded to the first pad 11 to form a first solder joint 01, and the other end is welded to the second pad 21 to form a second solder joint 02; the above also includes:

[0085] A third solder bump is soldered to the first solder pad 11 .

[0086] One end of the first lead 33 is welded to the first solder pad 11 to form a first solder point 01, and the other end is welded to the second solder pad 21 to form a second solder point 02, specifically including: welding the end of the linear body 31 of the first lead 33 away from the solder ball 32 to the solder bump of the first solder pad 11 to form the first solder point 01, and welding the end of the first lead 33 with the solder ball 32 to the second solder pad 21 to form the second solder point 02, so as to improve the reliability of welding the linear body 31 and the first solder pad 11.

[0087] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. An electronic component, characterized in that: The device comprises a first device, a second device and at least two leads, wherein the first device comprises a first pad, the second device comprises a second pad, and the at least two leads comprise a first lead and a second lead; The first lead is welded between the first pad and the second pad, the second lead is also welded between the first pad and the second pad, and the first lead and the second lead are connected in parallel; A solder joint between the first lead and the first pad and a solder joint between the second lead and the first pad are stacked.

2. The electronic component according to claim 1, wherein: A solder joint between the first lead and the second pad and a solder joint between the second lead and the second pad are stacked.

3. The electronic component according to claim 1, wherein: A welding point between the first lead and the second pad and a welding point between the second lead and the second pad are arranged side by side on a surface of the second pad.

4. The electronic component according to any one of claims 1 to 3, characterized in that: The lead wire comprises a linear body and a solder ball, wherein the solder ball and the linear body are an integrally formed structure, and the solder ball is located at one end of the linear body, and the lead wire has one end of the solder ball as a first bonding point and the other end as a second bonding point.

5. The electronic component according to claim 4, characterized in that The first bonding point of the first lead is welded to the first pad, and the first bonding point of the second lead is welded to the first pad.

6. The electronic component according to claim 4, wherein: The first bonding point of the first lead is welded to the first pad, and the second bonding point of the second lead is welded to the first pad.

7. The electronic component according to any one of claims 4 to 6, characterized in that: When the second bonding point is directly welded to the first pad, a welding bump is provided between the second bonding point and the first pad; when the second bonding point is directly welded to the second pad, a welding bump is provided between the second bonding point and the second pad.

8. The electronic component according to any one of claims 4 to 7, characterized in that: Within a preset length of one side of the linear body connected to the solder ball, the linear body is inclined toward the first solder pad.

9. The electronic component according to any one of claims 4 to 8, characterized in that: The arc height of the linear body is less than or equal to 50 um.

10. The electronic component according to any one of claims 1 to 9, characterized in that: The first device is a photodetector, and the second device is a transimpedance amplifier; Alternatively, the first device is a driver and the second device is a modulator; Alternatively, the first device is a transimpedance amplifier, and the second device is an electronic chip; Alternatively, the first device is an optical chip, and the second device is a substrate.

11. An electronic device, characterized in that: It comprises a circuit board, an electronic device and the electronic component according to any one of claims 1 to 10, wherein the electronic device is electrically connected to the electronic component, and the electronic device and the electronic component are arranged on the circuit board.

12. A method for preparing an electronic component, characterized in that: The electronic component comprises a first device, a second device, a first lead and a second lead, the first device comprises a first pad, and the second device comprises a second pad; the preparation method comprises: Welding one end of the first lead to the first pad to form a first welding point, and welding the other end to the second pad to form a second welding point; Welding one end of the second lead to the first welding point, and the other end to the second welding point; The first lead and the second lead are connected in parallel.

13. A method for preparing an electronic component, characterized in that: The electronic component comprises a first device, a second device, a first lead and a second lead, the first device comprises a first pad, and the second device comprises a second pad; the preparation method comprises: Welding one end of the first lead to the first pad to form a first welding point, and welding the other end to the second pad to form a second welding point; Welding one end of the second lead to the first welding point, and welding the other end to the second pad to form a third welding point, wherein the second welding point and the third welding point are arranged side by side on the surface of the second pad; The first lead and the second lead are connected in parallel.

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