A dual linear polarization independent control low profile reflectarray antenna with gain filtering characteristics

Abstract

The application discloses a low-profile reflective array antenna with gain filtering characteristics and dual linear polarization independent control. The application comprises a planar reflective array composed of a plurality of reflective units, a horn antenna; the reflective unit comprises a magnetic electric dipole loaded with a split ring resonator, an x polarization feeding part and a y polarization feeding part, each feeding part comprises an independent feeding arm and an open metal microstrip line patch, the feeding arm and the open metal microstrip line patch are connected through a metallized via hole, the energy received by the magnetic electric dipole can be coupled to the feeding arm within the working band, the energy is transmitted from the feeding arm to the open metal microstrip line patch through the metallized via hole, and reflection occurs at the open metal microstrip line patch, so the reflection phase can be changed by adjusting the length of the open metal microstrip line patch. At a low frequency, a radiation zero point is introduced by using the characteristics of the magnetic electric dipole, and at a high frequency, a radiation zero point is introduced by using the half-wave resonance characteristics of the split ring resonator, so that the filtering characteristics are realized.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of microwave and antenna technology, and relates to a low-profile reflective array antenna with gain filtering characteristics and double linear polarization independent control. BACKGROUND

[0002] In the 5G era, miniaturization of communication systems is required. In traditional radio frequency communication systems, a filter and an antenna are two indispensable parts. However, in the traditional design process, the design of the antenna and the filter is usually independent of each other. After the design of the antenna and the filter is completed, the corresponding functions are realized by cascading. However, both parts need to occupy a certain volume in the radio frequency communication system, and the cascading method will introduce additional loss. In order to solve this problem, an integrated design method of the antenna and the filter is proposed, that is, a filter antenna, which can well reduce the volume of the system and reduce the loss by integrating the filtering characteristics into the antenna.

[0003] However, most existing filter antennas work in the form of a single antenna. In the 5G era, a large amount of data needs to be transmitted over a long distance. Long-distance transmission requires the antenna to provide high gain. However, it is difficult for a single antenna structure to achieve high gain. Therefore, some works introduce filtering characteristics into phased array antennas. Although introducing filtering performance into phased array antennas can achieve high gain, phased array antennas require complex feeding structures, and the feeding structure will introduce additional loss. Reflective array antennas use a spatial feeding structure. Introducing filtering functions into reflective array antennas can avoid the problems of complex feeding structures and the loss caused by complex feeding structures, while achieving high gain and meeting the needs of long-distance data transmission.

[0004] However, the current reflective array antennas with filtering functions only work in single polarization mode. Compared with single polarization antennas, double linear polarization independent reflective array antennas have stronger data transmission capacity and can better meet the needs of the 5G era. Therefore, how to introduce filtering functions into reflective array antennas that can achieve double linear polarization independent control is a key problem. SUMMARY

[0005] The purpose of the present application is to provide a low-profile reflective array antenna with gain filtering characteristics and double linear polarization independent control to overcome the shortcomings of the prior art.

[0006] The technical solution of the present application to solve the above technical problems is:

[0007] A low-profile reflective array antenna with gain filtering characteristics and double linear polarization independent control, the main part comprising:

[0008] a planar reflective array as a reflecting surface;

[0009] A horn antenna as a feed source is located directly above the planar reflectarray and can rotate around a central axis; the central axis is perpendicular to the planar reflectarray;

[0010] Wherein, by rotating the horn antenna 0° and 90° relative to the planar reflectarray, the x-polarization working state and the y-polarization working state of the antenna are realized.

[0011] The planar reflectarray comprises a plurality of periodically distributed reflecting units, each reflecting unit sequentially comprises a first metal layer, a first dielectric layer, a first adhesive layer, a second metal layer, a second dielectric layer, a third metal layer, a second adhesive layer, a third dielectric layer and a fourth metal layer from top to bottom.

[0012] The second metal layer comprises four metal open ring patches, a first strip-shaped metal patch, a second strip-shaped metal patch and a third strip-shaped metal patch; wherein, the four metal open ring patches are arranged in a central symmetry, and there is a gap between adjacent metal open ring patches; the first strip-shaped metal patch is located in the gap of the four metal open ring patches parallel to the width direction of the first dielectric layer, the second strip-shaped metal patch and the third strip-shaped metal patch are located in the gap of the four metal open ring patches parallel to the length direction of the first dielectric layer, and are respectively located on both sides of the first strip-shaped metal patch and have a distance from the first strip-shaped metal patch.

[0013] Both ends of the first metal layer are connected with the second strip-shaped metal patch and the third strip-shaped metal patch of the second metal layer through two first metallized vias; the first metallized vias penetrate the first dielectric layer and the first adhesive layer.

[0014] The four metal open ring patches are connected with the third metal layer through four second metallized vias penetrating the second dielectric layer.

[0015] A magnetoelectric dipole is formed by the four metal open ring patches, the second metallized vias and the third metal layer.

[0016] The third metal layer has a first cutout and a second cutout.

[0017] The first strip-shaped metal patch is connected with the fourth metal layer through a fourth metallized via; the fourth metallized via penetrates the second dielectric layer, the second cutout of the third metal layer, the second adhesive layer and the third dielectric layer; the size of the second cutout is larger than the diameter of the fourth metallized via, so that the fourth metallized via does not contact the third metal layer.

[0018] The second strip-shaped metal patch is connected with the fourth metal layer through a fifth metalized via; the fifth metalized via penetrates through the second dielectric layer, the first hole of the third metal layer, the second adhesive layer and the third dielectric layer; the size of the first hole is larger than the diameter of the fifth metalized via, so that the fifth metalized via is not in contact with the third metal layer.

[0019] The fourth metal layer comprises a first open-circuit metal microstrip patch and a second open-circuit metal microstrip patch.

[0020] The first metal layer, the second strip-shaped metal patch and the third strip-shaped metal patch are connected through a first metalized via to form a y-polarized feeding arm of a magnetoelectric dipole, the first strip-shaped metal patch is an x-polarized feeding arm of the magnetoelectric dipole, the x-polarized feeding arm is connected with the first open-circuit metal microstrip patch through a fifth metalized via, the y-polarized feeding arm is connected with the second open-circuit metal microstrip patch through a fourth metalized via, the length of the first open-circuit metal microstrip patch is adjusted to adjust the reflection phase of x-polarization, the length of the second open-circuit metal microstrip patch is adjusted to adjust the reflection phase of y-polarization, so as to realize independent control of dual linear polarization.

[0021] Preferably, the first metal layer adopts a rectangular metal patch, and the length and width dimensions of the rectangular metal patch are much smaller than the length and width dimensions of the first dielectric layer.

[0022] Preferably, the first strip-shaped metal patch, the second strip-shaped metal patch and the third strip-shaped metal patch are all not in contact with the four metal split ring patches.

[0023] Preferably, the openings of the metal split ring patches are all outwardly arranged.

[0024] Preferably, the first open-circuit metal microstrip patch comprises a first metal microstrip, a second metal microstrip and a third metal microstrip; the first metal microstrip is mainly used to adjust the reflection phase by adjusting the length, the second metal microstrip is used to connect the first metal microstrip and also plays a role of impedance matching, and the third metal microstrip is used to be connected with the fifth metalized via.

[0025] Preferably, each metal split ring patch adopts a square split ring, the opening of the square split ring is located at a top corner position, the opening of the square split ring is inwardly bent, and a rectangular metal patch is arranged in the space inside the square split ring opposite to the opening; two adjacent sides of the rectangular metal patch are connected with the square split ring, and the other two adjacent sides face the space inside the square split ring.

[0026] Preferably, the openings of the four metal split ring patches are respectively located at four diagonal positions of the first dielectric layer, and there is a distance between the openings and the edges of the first dielectric layer and the second dielectric layer.

[0027] As a preference, the planar reflectarray is gapped from the horn antenna.

[0028] As a preference, the wide mouth of the horn antenna is directed towards the planar reflectarray.

[0029] As a preference, the planar reflectarray is shaped as a circle; the reflectarray elements are shaped as squares.

[0030] As a preference, the first open-circuit metal microstrip line patch of all reflectarray elements in the planar reflectarray are identical, or not identical, or not completely identical.

[0031] As a preference, the second open-circuit metal microstrip line patch of all reflectarray elements in the planar reflectarray are identical, or not identical, or not completely identical.

[0032] The application provides a low-profile reflectarray antenna with gain filtering characteristics and dual linear polarization independent control, the proposed reflectarray antenna is based on a magneto-electric dipole antenna loaded with split-ring resonators, the profile thickness corresponds to the center frequency of the antenna working, x polarization and y polarization beams are respectively directed to ±25° directions, in the x working state, a maximum gain of 21.77dBi can be realized, the corresponding aperture efficiency is 35.1%, the 3dB gain bandwidth is 19.3%, the selectivity is 0.5, in the y working state, a maximum gain of 21.93dBi can be realized, the corresponding aperture efficiency is 36.4%, the 3dB gain bandwidth is 18.5%, and the selectivity is 0.52. The application can introduce filtering performance in the dual linear polarization independent controllable reflectarray antenna, and better meets the demand for the volume and transmission data amount of radio frequency communication in the 5G era. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to more clearly illustrate the technical solutions of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings described in the following are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative labor.

[0034] Figure 1 It is a reflectarray element structure side view of the low-profile reflectarray antenna with gain filtering characteristics and dual linear polarization independent control.

[0035] Figure 2 It is an explosion view of the reflectarray element structure of the low-profile reflectarray antenna with gain filtering characteristics and dual linear polarization independent control.

[0036] Figure 3 It is a structure schematic diagram of the first dielectric layer and the first metal layer in the reflectarray element of the low-profile reflectarray antenna with gain filtering characteristics and dual linear polarization independent control.

[0037] Figure 4 Figure 2 is a structural diagram of the second dielectric layer, the second metal layer and the third metal layer in the reflecting unit of the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application.

[0038] Figure 4 Figure 3 is a structural diagram of the first dielectric layer and the second metal layer in the reflecting unit of the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application. Figure 4 Figure 4 is a size marking diagram corresponding to Figure 2.

[0039] Figure 5 Figure 5 is a structural diagram of the third metal layer in the reflecting unit of the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application.

[0040] Figure 6 Figure 6 is a structural diagram of the third dielectric layer and the fourth metal layer in the reflecting unit of the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application.

[0041] Figure 6 Figure 7 is a structural diagram of the second dielectric layer and the fourth metal layer in the reflecting unit of the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application. Figure 6 Figure 8 is a size marking diagram corresponding to Figure 6.

[0042] Figure 7 Figure 9 is a reflection amplitude and reflection phase curve diagram of the eight x-polarized 3bit units proposed by the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application under x-polarized electromagnetic wave incidence.

[0043] Figure 7 Figure 10 is a reflection amplitude and reflection phase curve diagram of the eight y-polarized 3bit units proposed by the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application under y-polarized electromagnetic wave incidence.

[0044] Figure 8 Figure 11 is a reflection amplitude and reflection phase curve diagram of the x-polarized reflection phase-90° unit proposed by the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application under x-polarized electromagnetic wave incidence when the y-polarized reflection phase is-90°, 0° and 90°, respectively.

[0045] Figure 8 Figure 12 is a reflection amplitude and reflection phase curve diagram of the y-polarized reflection phase-90° unit proposed by the low-profile reflectarray antenna with gain filtering and dual linear polarization independent control according to the present application under y-polarized electromagnetic wave incidence when the x-polarized reflection phase is-90°, 0° and 90°, respectively.

[0046] Figure 9Fig. 1 (a) is a schematic diagram of the overall array of the low-profile reflectarray antenna with gain filtering characteristics of the invention with double linear polarization independent control, in which the feed horn is rotated by 0°.

[0047] Figure 9 Fig. 1 (b) is a schematic diagram of the overall array of the low-profile reflectarray antenna with gain filtering characteristics of the invention with double linear polarization independent control, in which the feed horn is rotated by 90°.

[0048] Figure 10 Fig. 2 is a structural schematic diagram of the horn antenna used in the invention; wherein (a) is a bottom view, (b) is a side view, and (c) is a front view.

[0049] Figure 11 Fig. 3 (a) is an E-plane normalized radiation pattern of the low-profile reflectarray antenna with gain filtering characteristics of the invention with double linear polarization independent control in the x polarization working state at 9.5 GHz.

[0050] Figure 11 Fig. 3 (b) is an H-plane normalized radiation pattern of the low-profile reflectarray antenna with gain filtering characteristics of the invention with double linear polarization independent control in the x polarization working state at 9.5 GHz.

[0051] Figure 12 Fig. 4 (a) is an E-plane normalized radiation pattern of the low-profile reflectarray antenna with gain filtering characteristics of the invention with double linear polarization independent control in the y polarization working state at 9.5 GHz.

[0052] Figure 12 Fig. 4 (b) is an H-plane normalized radiation pattern of the low-profile reflectarray antenna with gain filtering characteristics of the invention with double linear polarization independent control in the y polarization working state at 9.5 GHz.

[0053] Figure 13 Fig. 5 is a result diagram of the simulated gain and aperture efficiency of the low-profile reflectarray antenna with gain filtering characteristics of the invention with double linear polarization independent control in different polarization working states.

[0054] Label in the figure: 1, first metal layer; 101, rectangular metal patch; 2, second metal layer; 21, metal open loop patch; 211, square open loop; 212, rectangular metal patch; 22, first strip metal patch; 23, second strip metal patch; 24, third strip metal patch; 3, third metal layer; 31, first hole; 32, second hole; 4, fourth metal layer; 41, first open metal microstrip line patch; 411, first metal microstrip line patch; 412, second metal microstrip line; 413, third metal microstrip line; 42, second open metal microstrip line patch; 421, fourth metal microstrip line; 422, fifth metal microstrip line; 423, sixth metal microstrip line; 5, first dielectric layer; 51, first metalized via; 6, second dielectric layer; 61, second metalized via; 7, third dielectric layer; 8, first adhesive layer; 9, second adhesive layer; 10, fourth metalized via; 11, fifth metalized via; 12, planar reflective array; 13, horn antenna; 1301, first metal sheet; 1302, second metal sheet; 1303, first metal column; 1304, second metal column; 1305, third metal column; 1306, fourth metal column; 1307, fifth metal column; 1308, sixth metal column; 1309, first metal surface; 1310, second metal surface. DETAILED DESCRIPTION

[0055] The application will be further analyzed in combination with specific embodiments below, but the specific examples here are only used to explain this application, and are not limited to the specific examples presented here.

[0056] A low-profile reflective array antenna with gain filtering characteristics and dual linear polarization independent control, as shown in Figure 9 FIG. (a), Figure 9The main body part shown in the middle (b) figure comprises: a planar reflective array 12, a horn antenna 13; wherein the x-polarization working state and the y-polarization working state of the antenna are realized by rotating the horn antenna 13 by 120° and 90° relative to the planar reflective array 12. The planar reflective array 12 is shaped like a circle, as a reflecting surface, it comprises a plurality of periodically and seamlessly distributed reflecting units, each reflecting unit is shaped like a square, and the reflecting units can produce different reflection phases when subjected to x-polarized and y-polarized incident waves, thereby forming the required beam direction of different polarized incident waves. The reflecting unit comprises a magneto-electric dipole loaded split-ring resonator, an x-polarized feeding part and a y-polarized feeding part, each feeding part comprises an independent feeding arm and an independent open-circuit metal microstrip line patch, the feeding arm and the open-circuit metal microstrip line patch are connected through a metallized via hole, the energy received by the magneto-electric dipole can be effectively coupled to the feeding arm within the working band, and can be transmitted from the feeding arm to the open-circuit metal microstrip line patch through the metallized via hole, and reflection occurs at the open-circuit metal microstrip line patch. Therefore, the reflection phase can be changed by adjusting the length of the open-circuit metal microstrip line patch. At low frequencies, the characteristics of the magneto-electric dipole are used to introduce a radiation zero point, and at high frequencies, the half-wavelength resonance characteristics of the split-ring resonator are used to introduce a radiation zero point, thereby realizing filtering characteristics. Two polarization-independent 3-bit units are designed by reasonably selecting the lengths of the two open-circuit metal microstrip line patches in the bottom layer, and a double-polarization-independent controllable reflective array antenna is composed by arranging the designed two polarization 3-bit units, thereby realizing different reflection beams for x-polarized incident waves and y-polarized incident waves, and thereby realizing a double-polarization-independent controllable low-profile reflective array antenna with gain filtering characteristics.

[0057] The horn antenna 13 as a feed source is located directly above the planar reflective array 12 and can rotate around the central axis; the central axis is perpendicular to the planar reflective array 12; there is a gap between the horn antenna 13 and the planar reflective array 12, and the wide opening faces the planar reflective array 12; as Figure 10 the middle (a) figure, Figure 10 the middle (b) figure, Figure 10As shown in Figure (c), the horn antenna 13 is a broadband horn antenna, including a horn structure channel, a first metal sheet 1301, a second metal sheet 1302, a first metal surface 1309, a second metal surface 1310, and six metal pillars (i.e., a first metal pillar 1303, a second metal pillar 1304, a third metal pillar 1305, a fourth metal pillar 1306, a fifth metal pillar 1307, and a sixth metal pillar 1308); the narrow opening of the horn structure channel is a closed opening, and the wide opening is an open end; the wide opening of the horn structure channel faces the planar reflective array 12; the first metal surface 1309 and the second metal surface 1310 are respectively provided on the symmetrical sides of the wide opening of the horn structure channel. The second metal surface 1310; the wide end of the speaker structure channel is also provided with a first metal sheet 1301 and a second metal sheet 1302 symmetrical around the central axis; the first metal sheet 1301 and the second metal sheet 1302 are located between the first metal surface 1309 and the second metal surface 1310, and one side of each is connected to the first metal surface 1309 and the second metal surface 1310 respectively; there is a gap between the first metal sheet 1301 and the second metal sheet 1302; three equally spaced metal columns are respectively provided on the other two symmetrical sides of the wide mouth of the speaker structure channel, and the two ends of the metal columns are connected to the side edges of the first metal surface 1309 and the second metal surface 1310.

[0058] The wide aperture plane of the horn antenna 13 is parallel to the aperture plane of the planar reflectarray 12 and the distance between them is 172 mm. When the long side of the wide aperture plane of the feed horn antenna 5 is parallel to the y-axis, that is, the rotation angle of the horn antenna is 0°, the low-profile reflectarray antenna with independent dual-linear polarization control and gain filtering characteristics operates in the x-polarization state; when the long side of the aperture plane of the feed horn antenna 5 is parallel to the x-axis, that is, the rotation angle of the horn antenna is 90°, the single-layer broadband reflectarray antenna with independent dual-linear polarization control operates in the y-polarization state, that is, the working state of the low-profile reflectarray antenna with independent dual-linear polarization control and gain filtering characteristics is switched by rotating the feed horn antenna around the z-axis to generate independently controllable x-polarization and y-polarization reflection beams.

[0059] like Figures 1-2 As shown, each reflection unit comprises, from top to bottom, a first metal layer 1, a first dielectric layer 5, a first adhesive layer 8, a second metal layer 2, a second dielectric layer 6, a third metal layer 3, a second adhesive layer 9, a third dielectric layer 7 and a fourth metal layer 4.

[0060] like Figure 3 As shown, the first metal layer 1 adopts a rectangular metal patch 101, whose length and width are much smaller than those of the first dielectric layer 5; the half length of the rectangular metal patch 101 is l9 and the width is W7.

[0061] like Figure 4As shown in FIG. a, the second metal layer 2 includes four metal open loop patches 21, a first strip-shaped metal patch 22, a second strip-shaped metal patch 23 and a third strip-shaped metal patch 24; wherein the four metal open loop patches 21 are in a center-symmetrical structure of 2x2 matrix distribution, and there is a gap between adjacent metal open loop patches 21; the first strip-shaped metal patch 22 is located in the gap of the four metal open loop patches 21 parallel to the width direction of the first dielectric layer 5, the second strip-shaped metal patch 23 and the third strip-shaped metal patch 24 are located in the gap of the four metal open loop patches 21 parallel to the length direction of the first dielectric layer 5, and are respectively located on the two sides of the first strip-shaped metal patch 22, and are both away from the first strip-shaped metal patch 22.

[0062] The first strip-shaped metal patch 22, the second strip-shaped metal patch 23 and the third strip-shaped metal patch 24 are all not in contact with the four metal open loop patches 21.

[0063] Each metal open loop patch 21 adopts a square open loop 211, the openings of the square open loop 211 are all outwardly arranged, and are located at the top corner positions, and the openings of the square open loop 211 are inwardly bent, and a rectangular metal patch 212 is arranged at a position opposite to the opening in the inner space of the square open loop 211; two adjacent sides of the rectangular metal patch 212 are connected with the square open loop 211, and the other two adjacent sides face the inner space of the square open loop 211.

[0064] The openings of the open loops of the four metal open loop patches 21 are respectively located at four diagonal positions of the first dielectric layer 5, and are away from the edges of the first dielectric layer 5 and the second dielectric layer 6.

[0065] The two ends of the first metal layer 1 are connected with the second strip-shaped metal patch 23 and the third strip-shaped metal patch 24 of the second metal layer 2 through two first metallized vias 51; the first metallized via 51 penetrates the first dielectric layer 5 and the first adhesive layer 8; the distance from the first metallized via 51 to the short side of the rectangular metal patch 101 is d2, and the diameter of the first metallized via 51 is r1.

[0066] The four metal open loop patches 21 are respectively connected with the third metal layer 3 through four second metallized vias 61 penetrating the second dielectric layer 6.

[0067] As shown in FIG. b, the length of the longest side of the metal open loop patch 21 is Figure 4 As shown in FIG. b, the length of the longest side of the metal open loop patch 21 is 3, the width is w2, the length of the second longest side is 4, the width is w2, and the length of the short side is 5, the width is w3, and the rectangular metal patch 212 with a width of w1 is connected to the second metalized via hole 61 close to the center of the unit, the distance between the second metalized via hole 61 and the edge of the square opening ring 211 is d1, and the distance from the center of the unit is d. The length of the first strip-shaped metal patch 22 in the longer y-axis direction (width direction) is 2, the length in the shorter y-axis direction (width direction) is 1, the width is w4, the length of the second strip-shaped metal patch 23 is l10, the width is w4, the length of the third strip-shaped metal patch 24 is l11, the width is w4, and the distance between the first metalized via hole 51 and the short side of the first strip-shaped metal patch 22 and the third strip-shaped metal patch 24 close to the center of the unit is d4.

[0068] As Figure 5 The third metal layer 3 is a ground metal surface, and the first and second cutouts 31 and 32 are formed in the third metal layer 3.

[0069] The first strip-shaped metal patch 22 is connected to the fourth metal layer 4 through the fourth metalized via hole 10, the fourth metalized via hole 10 penetrates the second dielectric layer 6, the second cutout 32 of the third metal layer 3, the second adhesive layer 9, and the third dielectric layer 7, the size of the second cutout 32 is greater than the diameter of the fourth metalized via hole 10, and the fourth metalized via hole 10 is not in contact with the third metal layer 3.

[0070] The second strip-shaped metal patch 23 is connected to the fourth metal layer 4 through the fifth metalized via hole 11, the fifth metalized via hole 11 penetrates the second dielectric layer 6, the first cutout 31 of the third metal layer 3, the second adhesive layer 9, and the third dielectric layer 7, the size of the first cutout 31 is greater than the diameter of the fifth metalized via hole 11, and the fifth metalized via hole 11 is not in contact with the third metal layer 3.

[0071] As Figure 6 shown in (a) of the drawings, the fourth metal layer 4 includes a first open-circuit metal microstrip patch 41 and a second open-circuit metal microstrip patch 42.

[0072] The first open-circuit metal microstrip patch 41 includes a first metal microstrip line 411, a second metal microstrip line 412, and a third metal microstrip line 413; the first metal microstrip line 411 is mainly used to adjust the reflection phase by adjusting the length, the second metal microstrip line 412 is used to connect the first metal microstrip line 411 and also serves as impedance matching, and the third metal microstrip line 413 is used to be connected to the fifth metalized via hole 11.

[0073] The second open-circuit metal microstrip patch 42 includes a fourth metal microstrip 421, a fifth metal microstrip 422, and a sixth metal microstrip 423; the fourth metal microstrip 421 is mainly used to adjust the reflection phase by adjusting the length, the fifth metal microstrip 422 is used to connect the fourth metal microstrip 421 and also plays a role of impedance matching, and the sixth metal microstrip 423 is used to be connected with the fourth metalized via hole 10.

[0074] Figure 6 As shown in the middle (b) of the figure, the distance between the fourth metalized via hole 10 and the fifth metalized via hole 11 and the short side of the fifth rectangular metal patch 412 and the fifth metal microstrip 422 is l12, the width of the fifth rectangular metal patch 412 and the fifth metal microstrip 422 is w5, the length is l6, the width of the sixth rectangular metal patch 413 and the sixth metal microstrip 423 is w6, the length is l7, the first metal microstrip patch 411 is composed of eight metal patches with different lengths, the lengths are l120, l121, l122, l123, l124, l125, l126 and l127 respectively, the second metal microstrip patch 421 is composed of eight metal patches with different lengths, the lengths are l20, l21, l22, l23, l24, l25, l26 and l27 respectively, and the width of the first metal microstrip patch 411 and the second metal microstrip patch 421 is l9.

[0075] The metal open loop patch 21 is connected with the third metal surface 3 through the second metalized via hole 61 penetrating the second dielectric layer 6 to form a magnetic electric dipole. The second rectangular metal patch 22, as a feeding arm of the x polarization direction of the magnetic electric dipole, is connected with the second open-circuit metal microstrip patch 42 through the fourth metalized via hole 10 penetrating the second metal layer 2, the second dielectric layer 6, the second hole 32, the second adhesive layer 9 and the third dielectric layer 7, and the reflection phase of the x polarization is adjusted by adjusting the length of the second metal microstrip patch 421. The first rectangular metal patch 101, the third rectangular metal patch 23 and the fourth rectangular metal patch 24 are connected through the first metalized via hole 51 penetrating the first dielectric layer 5 and the first adhesive layer 8 as the feeding arm of the y polarization direction of the magnetic electric dipole, and are connected with the first open-circuit metal microstrip patch 41 through the fifth metalized via hole 11 penetrating the second metal layer 2, the second dielectric layer 6, the first circular hole 31, the second adhesive layer 9 and the third dielectric layer 7, and the reflection phase of the y polarization is adjusted by adjusting the length of the first metal microstrip patch 411. The reflection phase of the x polarization is adjusted by adjusting the length of the first open-circuit metal microstrip patch 41, and the reflection phase of the y polarization is adjusted by adjusting the length of the second open-circuit metal microstrip patch 42, so as to realize independent control of the dual linear polarization.

[0076] The distance between the centers of adjacent reflection units is p; p can be 6.5 mm.

[0077] The first open-circuit metal microstrip line patch 41 of all the reflecting units in the planar reflecting array 12 are completely identical, or not identical, or not completely identical.

[0078] The second open-circuit metal microstrip line patch 42 of all the reflecting units in the planar reflecting array 12 are completely identical, or not identical, or not completely identical.

[0079] The dielectric substrate used in the first dielectric layer 1 is Rogers 4313B, with a relative dielectric constant of 3.66, a loss tangent angle of 0.0037, and a thickness h1 of 0.254 mm.

[0080] The dielectric substrate used in the second dielectric layer 2 is Rogers 4313B, with a relative dielectric constant of 3.66, a loss tangent angle of 0.0037, and a thickness h2 of 1.524 mm.

[0081] The dielectric substrate used in the third dielectric layer 3 is Rogers 4313B, with a relative dielectric constant of 3.66, a loss tangent angle of 0.0037, and a thickness h3 of 0.138 mm.

[0082] The dielectric substrate used in the first adhesive layer 8 and the second adhesive layer 9 is Rogers 4413F, with a relative dielectric constant of 3.7, a loss tangent angle of 0.004, and a thickness of 0.1 mm.

[0083] The first metal layer 1, the second metal layer 2, the third metal layer 3, and the fourth metal layer 4 are made of copper with a thickness of 0.036 mm.

[0084] In summary, the preferred selection is d = 1.4, d1 = 0.9, d2 = 0.3, d3 = 0.3, d4 = 0.3, h1 = 0.254, h2 = 1.524, h3 = 0.138, l1 = 1.3, l2 = 2.2, l3 = 2.5, l4 = 2.3, l5 = 1.2, l6 = 1, l7 = 2.6, l8 = 0.1, l9 = 1.05, l10 = 1.1, l11 = 1.4, l12 = 0.3, p = 6.5, r1 = 0.4, r2 = 0.8, w1 = 1.2, w2 = 0.5, w3 = 0.3, w4 = 0.6, w5 = 0.9, w6 = 0.7, w7 = 0.6, which constitute the reflecting unit. The planar transmitting array 13 has a diameter of 221 mm and includes 912 reflecting units.

[0085] As Figure 7As shown in Figure (a), by optimizing the lengths of eight groups of fourth metal microstrip lines 421, eight x-polarization reflection phase difference units of 45° are realized at 9.5 GHz, and the reflection amplitude is above -1.5 dB except for the 90° unit within the frequency range of 8-11 GHz.

[0086] like Figure 7 As shown in Figure (b), by optimizing the lengths of eight groups of first metal microstrip line patches 411, eight units with a y-polarization reflection phase difference of 45° are realized at 9.5 GHz, and the reflection amplitude is above -1.5 dB within the frequency range of 8-11 GHz except for the 90° unit.

[0087] like Figure 8 As shown in Figure (a), when the incident electromagnetic wave is x-polarized, the reflection phase of x-polarization is fixed at -90°. When the reflection phase of y-polarization changes between -90°, 0° and 90°, the emission phase of x-polarization does not change, as shown in Figure 1. Figure 8 As shown in Figure (b), when the incident electromagnetic wave is y-polarized, the reflection phase of the y-polarization is fixed at -90°. When the reflection phase of the x-polarization changes between -90°, 0° and 90°, the emission phase of the y-polarization does not change. This shows that the designed unit can produce different reflection phases for electromagnetic waves of different polarizations and can achieve independent controllable dual linear polarization.

[0088] This embodiment also provides a phase control method for the above-mentioned dual-polarization independently controlled low-profile reflectarray antenna with gain filtering characteristics, including the following steps:

[0089] Step 1: First, design a reflection unit that can generate independent phase responses to x-polarized incident waves and y-polarized incident waves. This reflection unit adopts a 3-bit design method, that is, eight units with a phase difference of 45°.

[0090] Step 2: Calculate the phase compensation required for the x-polarized incident wave and the y-polarized incident wave according to the directions of the x-polarized wave and the y-polarized wave as required and the distance from the horn antenna 13 to the planar reflective array 12 .

[0091] Step 3: According to the required phase compensation corresponding to the phase compensation that can be provided by the eight units, the unit that can provide the phase compensation closest to the calculated phase compensation is selected as the actual unit, and all units are selected to form the reflection array surface.

[0092] Depend on Figure 11 Figure (a) and Figure 11As shown in Figure (b), the single-layer broadband reflectarray antenna with independent dual-polarization control operates in the x-polarization state, with an E-plane main beam direction of 25°, as expected. The E-plane sidelobe level and cross-polarization are less than -14 dB and -29 dB, respectively. The H-plane sidelobe level and cross-polarization are less than -18 dB and -26 dB, respectively.

[0093] Depend on Figure 12 Figure (a) and Figure 12 As shown in Figure (b), the single-layer broadband reflectarray antenna with independent dual-polarization control operates in the y-polarization state, with an E-plane main beam direction of 25°, as expected. The E-plane sidelobe level and cross-polarization are less than -15 dB and -29 dB, respectively. The H-plane sidelobe level and cross-polarization are less than -18 dB and -29 dB, respectively.

[0094] Depend on Figure 13 It can be seen that when this example is in the x-polarization working state, the maximum gain of 21.77dBi can be achieved, the corresponding aperture efficiency is 35.1%, the 3dB gain bandwidth is 19.3%, and the selectivity is 0.5. In the y-polarization working state, the maximum gain of 21.93dBi can be achieved, the corresponding aperture efficiency is 36.4%, the 3dB gain bandwidth is 18.5%, and the selectivity is 0.52.

[0095] In summary, the dual-polarization independently controlled low-profile reflectarray antenna with gain filtering characteristics of the present invention produces filtering characteristics by utilizing the characteristics of the ME dipole to generate a radiation zero point at a low frequency, and by forming a split ring resonator through an open ring to generate a radiation zero point at a high frequency, and independently adjusts the reflection phase of the x-polarized and y-polarized electromagnetic waves by adjusting the length of the two independent metal microstrip lines, thereby achieving independent control of the dual-polarization.

[0096] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A low-profile reflectarray antenna with dual linear polarization independent control and gain filtering characteristics, the main body comprising: a planar reflective array (12) serving as a reflective surface; A horn antenna (13) serving as a feed source, located directly above the planar reflective array (12) and rotatable about a central axis; the central axis is perpendicular to the planar reflective array (12); The x-polarization working state and the y-polarization working state of the antenna are realized by rotating the horn antenna (13) by 0° and 90° respectively relative to the central axis of the planar reflective array (12); The feature is that the planar reflective array (12) comprises a plurality of periodically distributed reflective units, each reflective unit comprising, from top to bottom, a first metal layer (1), a first dielectric layer (5), a first adhesive layer (8), a second metal layer (2), a second dielectric layer (6), a third metal layer (3), a second adhesive layer (9), a third dielectric layer (7) and a fourth metal layer (4); The first metal layer (1) is a rectangular metal patch, the length and width of which are smaller than those of the first dielectric layer (5); The second metal layer (2) comprises four metal open ring patches (21), a first strip metal patch (22), a second strip metal patch (23) and a third strip metal patch (24); wherein the four metal open ring patches (21) are arranged in a central symmetrical manner, their openings are all arranged outward, and there is a gap between adjacent metal open ring patches (21); the first strip metal patch (22) is located in the gap of the four metal open ring patches (21) parallel to the width direction of the first metal layer (1), and the second strip metal patch (23) and the third strip metal patch (24) are located in the gap of the four metal open ring patches (21) parallel to the length direction of the first metal layer (1), and are respectively located on both sides of the first strip metal patch (22), and are both spaced apart from the first strip metal patch (22); The two ends of the first metal layer (1) are connected to the second strip-shaped metal patch (23) and the third strip-shaped metal patch (24) of the second metal layer (2) through two first metalized vias (51); the first metalized vias (51) penetrate the first dielectric layer (5) and the first adhesive layer (8); The four metal open ring patches (21) are respectively connected to the third metal layer (3) through four second metallized vias (61) penetrating the second dielectric layer (6); The third metal layer (3) is provided with a first hole (31) and a second hole (32); The first strip-shaped metal patch (22) is connected to the fourth metal layer (4) through a fourth metalized via (10); the fourth metalized via (10) penetrates the second dielectric layer (6), the second hole (32) of the third metal layer (3), the second adhesive layer (9), and the third dielectric layer (7), and the fourth metalized via (10) does not contact the third metal layer (3); The second strip-shaped metal patch (23) is connected to the fourth metal layer (4) through a fifth metalized via (11); the fifth metalized via (11) penetrates the second dielectric layer (6), the first excavated hole (31) of the third metal layer (3), the second adhesive layer (9), and the third dielectric layer (7), and the fifth metalized via (11) does not contact the third metal layer (3); The fourth metal layer (4) includes a first open-circuit metal microstrip line patch (41) and a second open-circuit metal microstrip line patch (42); A magnetoelectric dipole is formed by four metal open ring patches (21), a second metalized via (61), and a third metal layer (3); the first metal layer (1), the second strip metal patch (23), and the third strip metal patch (24) are connected through a first metalized via (51) to form a y-polarized feeding arm of the magnetoelectric dipole; the first strip metal patch (22) is an x-polarized feeding arm of the magnetoelectric dipole; the x-polarized feeding arm is connected to a first open-circuit metal microstrip line patch (41) through a fourth metalized via (10); and the second strip metal patch (23) is connected to a second open-circuit metal microstrip line patch (42) through a fifth metalized via (11).

2. The low-profile reflectarray antenna according to claim 1, wherein: The first strip-shaped metal patch (22), the second strip-shaped metal patch (23) and the third strip-shaped metal patch (24) are not in contact with the four metal open ring patches (21).

3. The low-profile reflectarray antenna according to claim 1, wherein: The reflection phase of the x-polarization is adjusted by adjusting the length of the first open-circuit metal microstrip line patch (41), and the reflection phase of the y-polarization is adjusted by adjusting the length of the second open-circuit metal microstrip line patch (42), thereby achieving independent control of the dual-line polarization.

4. The low-profile reflectarray antenna according to claim 1, wherein: Each metal open ring patch (21) adopts a square open ring (211), the opening of the square open ring (211) is located at a top corner position, and the opening of the square open ring (211) is bent inward, and a rectangular metal patch (212) is provided in the ring space of the square open ring (211) at a position opposite to the opening; two adjacent sides of the rectangular metal patch (212) are connected to the square open ring (211), and the other two adjacent sides face the ring space of the square open ring (211).

5. The low-profile reflectarray antenna according to claim 1, wherein: The open ring openings of the four metal open ring patches (21) are respectively located at four diagonal positions of the first dielectric layer (5), and are spaced apart from the edges of the first dielectric layer (5) and the second dielectric layer (6).

6. The low-profile reflectarray antenna according to claim 1, wherein: There is a gap between the planar reflection array (12) and the horn antenna (13).

7. The low-profile reflectarray antenna according to claim 1, wherein: The wide mouth of the horn antenna (13) faces the planar reflection array (12).

8. The low-profile reflectarray antenna according to claim 1, wherein: The first open-circuit metal microstrip line patches (41) of all the reflective units in the planar reflective array (12) are completely identical, completely different, or not completely identical; The second open-circuit metal microstrip line patches (42) of all the reflection units in the planar reflection array (12) are completely identical, completely different, or not completely identical.

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