Packaging method of two-dimensional polariton sequence terahertz micro-nano device

Abstract

The invention discloses a packaging method of a two-dimensional polariton sequence terahertz micro-nano device, and relates to the technical field of the two-dimensional polariton sequence terahertz micro-nano device. The packaging method comprises the following steps: bonding a silicon substrate layer of a device with the bottom of a silicon lens to obtain an integrated module; a first metal shell is arranged on the outer side of the silicon lens; a second metal shell is arranged on the outer side of the first metal shell, and the second metal shell comprises a first metal pin and a second metal pin; respectively communicating a source metal electrode, a gate metal electrode and a drain metal electrode with the first metal pin, the second metal pin and the second metal shell; filling a gap between the integrated module and the second metal shell with an insulating sealant; and a third metal shell is arranged below the second metal shell. According to the invention, lossless packaging of the emerging two-dimensional material polariton sequence structure detection device can be realized, and the photoelectric response performance and the stability of the device can be improved, and the service life of the device can be prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of two-dimensional polaritons-ordered micro-nano devices, and in particular to a packaging method for two-dimensional polaritons-ordered terahertz micro-nano devices. Background Art

[0002] Terahertz (THz) science and technology connects macroscopic classical electromagnetic wave theory and microscopic quantum theory, and is an emerging interdisciplinary subject. Electromagnetic waves in the terahertz frequency band are between the infrared frequency band and the millimeter wave frequency band. The most widely defined frequency range is 0.1THz to 10THz, and the corresponding wavelength (λ = c / f) range is 30μm to 3000μm, and the wave number (k / 2π = 1 / λ) range is 3.33cm -1 ~333cm -1 , the photon energy (E=hν) ranges from 0.413meV to 41.3meV, and the corresponding photon temperature (T=hν / kB) is 4.8K to 480K. From the perspective of the electromagnetic spectrum, from low-frequency to the radio frequency band and millimeter wave band of electronics, to the infrared band, visible light band, ultraviolet band, and X-ray band of high-frequency photonics, most of the spectrum resources of electromagnetic waves have been comprehensively studied and developed, and related technologies and applications have been applied to all aspects of life. At present, only the terahertz band has not been fully recognized and developed. The main reason is the lack of effective terahertz radiation sources and detection technologies, as well as effective theoretical guidance. In theory, classical electromagnetic theory is generally used in the electronics frequency band, while quantum theory is generally used in the photonics frequency band. Since both electronics and photonics have many technical bottlenecks due to physical constraints in the terahertz frequency band, such as the difficulty in improving the power and efficiency of the terahertz source, the difficulty in controlling the terahertz frequency band, the low sensitivity of the terahertz detector, and the inability to work at room temperature, the terahertz frequency band is called the "terahertz gap."

[0003] Terahertz detection technology is one of the key technologies of terahertz technology and the main component of terahertz system. It plays an important role in promoting the large-scale industrial application of terahertz technology. Existing terahertz detection technologies are mainly divided into thermal detection technology, photon detection technology, electronic detection technology and new detection technology based on low-dimensional materials. Thermal detection technology is based on the absorption of terahertz waves by thermal materials to cause changes in the physical properties of the device itself to achieve terahertz detection. It has high sensitivity and a wide response spectrum range, but its disadvantage is that the response speed is slow. Photon detection technology is based on the intra-band transition and inter-band transition of semiconductor materials to achieve terahertz detection. Its advantages are high responsiveness and fast response speed. However, the room temperature noise of semiconductor materials is relatively high, which leads to the need for low-temperature working conditions for the device, making it difficult to apply the device on a large scale in industry, and the corresponding spectrum range is greater than 1THz. Electronic detection technology is based on the nonlinear effect of terahertz waves and free electrons in high-mobility semiconductors to achieve terahertz detection. It has the characteristics of fast response speed and high responsiveness, but the disadvantage is that the operating frequency of the device is less than 1THz. The new detection technology based on low-dimensional materials is an emerging terahertz detection technology in recent years, which has the advantages of fast response speed, high responsiveness and wide response spectrum. Therefore, the new detection technology based on low-dimensional materials is expected to solve the bottleneck problem of terahertz and play an important role in promoting the development of terahertz technology. However, the signal stability and sensitivity of low-dimensional material detection technology are relatively poor at present. The main reason is that there is relatively little research on terahertz packaging technology. The packaging technology of traditional thermal, photon and electronic detection technologies is not suitable for two-dimensional material detection technology. Therefore, the development of packaging technology suitable for low-dimensional material detection technology is the key to promoting the industrial application of low-dimensional material detection technology.

[0004] At present, there are relatively few reports on the packaging technology of terahertz detection technology. The existing packaging technology of terahertz detection technology is based on the packaging of traditional thermosensitive materials or semiconductor materials, which is the packaging technology of infrared devices or microwave devices. These packaging technologies are not suitable for the packaging of two-dimensional material detection technology, and are even less suitable for the packaging of terahertz micro-nano devices based on two-dimensional polaritons. The main reasons are as follows: 1) The current packaging process will affect the performance and integrity of the two-dimensional material, thereby affecting the performance of the detection device; 2) The existing packaging technology is mainly vacuum packaging or the introduction of Fabry resonant cavity to enhance the performance of the detector, but it does not consider further enhancing the performance of the device by designing a silicon lens; 3) The existing packaging technology does not consider the electromagnetic interference of the environment, which reduces the performance of the device; 4) The terahertz transmittance of the current packaging technology is relatively low, thereby reducing the performance of the terahertz device; 5) The thickness of the two-dimensional material is relatively thin, and it is greatly affected by the dielectric environment, especially based on the two-dimensional polaritons The terahertz micro-nano device needs to design a stable dielectric environment and a resonant structure to improve the stability and performance of the device. Based on this, the present invention designs and packages terahertz micro-nano devices based on two-dimensional polaritons to solve the above technical problems. Summary of the invention

[0005] The purpose of the present invention is to overcome the shortcomings of the prior art and provide a packaging method for a two-dimensional polaritons-ordered terahertz micro-nano device. The present invention can achieve lossless packaging of emerging two-dimensional material polaritons-ordered detection devices, and can improve the photoelectric response performance of the device, the stability of the device, and the life of the device.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] The present invention provides a packaging method for a two-dimensional polariton-ordered terahertz micro-nano device, comprising the following steps:

[0008] (1) preparing a terahertz micro-nano device based on a two-dimensional polaritons structure, wherein the structure of the terahertz micro-nano device based on a two-dimensional polaritons structure includes a gate metal electrode, a hafnium oxide or aluminum oxide dielectric layer, a source metal electrode, a drain metal electrode, a two-dimensional polaritons structure material layer, a silicon oxide insulating layer, and a silicon substrate layer;

[0009] (2) bonding the silicon substrate layer of the terahertz micro-nano device based on the two-dimensional polaritons to the bottom of the silicon lens to obtain an integrated module;

[0010] (3) a first metal housing is provided on the outer side of the silicon lens for fixing the integrated module;

[0011] (4) disposing a second metal shell on a side of the first metal shell close to the micro-nano device, wherein the second metal shell includes a first metal pin and a second metal pin;

[0012] (5) connecting the source metal electrode to the first metal pin through a first metal lead, connecting the gate metal electrode to the second metal pin through a second metal lead, and connecting the drain metal electrode to the second metal housing through a third metal lead;

[0013] (6) filling the gap between the integrated module and the second metal housing with insulating sealant to fix the first metal lead, the second metal lead, and the third metal lead;

[0014] (7) A third metal shell is disposed below the second metal shell.

[0015] More preferably, in step (1), the thickness of the gate metal electrode is 20-50 nm.

[0016] More preferably, in step (1), the thickness of the source metal electrode is 20-200 nm, preferably 100 nm.

[0017] More preferably, in step (1), the thickness of the drain metal electrode is 20-200 nm, preferably 100 nm.

[0018] More preferably, in step (1), the thickness of the hafnium oxide or aluminum oxide dielectric layer is 20-200 nm, preferably 30 nm.

[0019] The present invention controls the thickness of the hafnium oxide or aluminum oxide dielectric layer to be 20-200nm, thereby ensuring uniform film quality, preventing the layer from being too thin to cause grid leakage, and ensuring that the grid is more easily able to regulate the plasmon polariton center resonance frequency of the detection device.

[0020] More preferably, in step (1), the thickness of the two-dimensional polariton-ordered material layer is no more than 10 nm.

[0021] More preferably, in step (1), the thickness of the silicon oxide insulating layer is 300 nm.

[0022] More preferably, in step (1), the thickness of the silicon substrate layer is 500 μm.

[0023] The thickness of the silicon oxide insulating layer and the silicon substrate layer of the present invention is specifically determined according to the focal length of the silicon lens, and it is necessary to ensure that the focus of the silicon lens passes through the silicon / silicon oxide and falls on the sequenced material.

[0024] Preferably, in step (2), the silicon lens is a hemispherical silicon lens or a super hemispherical silicon lens.

[0025] Preferably, in step (5), the diameters of the first metal lead, the second metal lead and the third metal lead are all 18-80 μm, preferably 60 μm, and are made of alloy wire or gold wire.

[0026] The present invention controls the diameter of the metal lead wire within the above range, thereby improving the success rate of the lead wire and reducing the production cost of the detector.

[0027] Preferably, in step (6), the insulating sealant includes at least one of polyimide, polyurethane glue, and epoxy resin. The insulating sealant is a sealant with low thermal conductivity and weak terahertz absorption, which is beneficial to reducing the heat loss of the detection device and improving the device performance.

[0028] Preferably, an anti-reflection film is provided on the surface of the silicon lens, and the material of the anti-reflection film includes polyethylene or polyparaxylene.

[0029] The present invention improves the focusing efficiency of terahertz waves and the performance of the detection unit by arranging an anti-reflection film on the outer side of the silicon lens.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] (1) The silicon lens of the present invention does not directly contact the surface of the two-dimensional polaritons-ordered micro-nano device, thereby avoiding the influence of the lens on the performance of the micro-nano detection device due to the sensitivity of the two-dimensional polaritons-ordered material to the medium environment.

[0032] (2) The metal shell can not only shield electromagnetic interference and reduce the noise of the two-dimensional material detection device, but also serve as a grounding terminal to achieve electrostatic protection.

[0033] (3) The gate of the packaged device can reflect the transmitted terahertz wave, enhancing the performance of the detector. The central detection frequency of the detector can also be controlled by voltage regulation.

[0034] (4) The packaging technology of the present invention does not require vacuum packaging, but isolating the air by filling with insulating sealant, thereby reducing processing costs and improving the stability and repeatability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a schematic diagram of the structure of a terahertz micro-nano device based on a two-dimensional polariton sequence.

[0036] Figure 2 This is a schematic diagram of the structure after the two-dimensional polariton sequence detection device is bonded to the silicon lens.

[0037] Figure 3 It is a structural schematic diagram after the first metal shell and the integrated module are fixed.

[0038] Figure 4 It is a schematic diagram of the structure after the second metal shell is fixed to the integrated module.

[0039] Figure 5 It is a schematic diagram of the structure after the source, drain, gate of the micro-nano device is connected and turned on with the source, drain, gate of the metal cathode.

[0040] Figure 6 It is a schematic diagram of the structure after filling with insulating sealant.

[0041] Figure 7 It is a schematic diagram of the packaging structure of a two-dimensional polariton-ordered terahertz micro-nano device obtained by the method of the present invention.

[0042] Figure 1-7 In the figure: 1 is the gate metal electrode; 2 is the hafnium oxide dielectric layer; 3 is the source metal electrode; 4 is the drain metal electrode; 5 is the material layer based on the two-dimensional polaritons structure; 6 is the silicon oxide insulating layer; 7 is the silicon substrate layer; 8 is the silicon lens; 9 is the anti-reflection film; 10 is the first metal shell; 11 is the second metal shell; 12 is the first metal pin; 13 is the second metal pin; 14 is the insulating protection layer of the metal pin; 15 is the first metal lead; 16 is the second metal lead; 17 is the third metal lead; 18 is the insulating sealant layer; 19 is the third metal shell. DETAILED DESCRIPTION

[0043] In order to better illustrate the purpose, technical solutions and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments, but the protection scope and implementation methods of the present invention are not limited thereto.

[0044] Unless otherwise specified, the materials and reagents used in the following examples are commercially available.

[0045] Example 1

[0046] A packaging method for a two-dimensional polariton-ordered terahertz micro-nano device comprises the following steps:

[0047] (1) Preparation of terahertz micro-nano devices based on two-dimensional polaritons: Figure 1 As shown, the terahertz micro-nano device based on the two-dimensional polariton structure includes a gate metal electrode 1 with a thickness of 50nm, a hafnium oxide dielectric layer 2 with a thickness of 30nm, a source metal electrode 3 with a thickness of 100nm, a drain metal electrode 4 with a thickness of 100nm, a two-dimensional polariton structure material layer 5 with a thickness of 10nm, a silicon oxide insulating layer 6 with a thickness of 300nm, and a silicon substrate layer 7 with a thickness of 500μm.

[0048] Among them, the main function of the hafnium oxide dielectric layer is to isolate the contact between the two-dimensional polariton order material and the air, realizing the first step of packaging of the two-dimensional polariton order terahertz micro-nano device. Then the gate metal electrode on the back also serves as a metal reflective layer, which can reflect the terahertz wave to enhance the absorption of the order structure to the terahertz wave, and at the same time shield the influence of the environmental electromagnetic wave on the device for the first time, reducing the device noise. The two-dimensional polariton order material is a two-dimensional material with polariton effect that has been micro-nano processed into an ordered array structure. In addition, the size of the two-dimensional polariton order material can be selected and adjusted according to the actual application requirements.

[0049] (2) Figure 2 As shown, an anti-reflection film 9 is provided on the surface of the silicon lens 8. The provision of the anti-reflection film 9 can increase the light-gathering efficiency of the silicon lens. The material of the anti-reflection film is polyethylene, and in other embodiments, it can be polyparaxylene. Then, a direct bonding or adhesive bonding process is used, wherein the adhesive bonding process is to spin-coat an adhesive material (benzocyclobutene adhesive) on the bottom of a hemispherical or super-hemispherical silicon lens coated with an anti-reflection film, and the silicon substrate layer 7 of the terahertz micro-nano device based on the two-dimensional polaritons sequence is bonded to the bottom plane of the silicon lens 8, so as to obtain an integrated module.

[0050] Since the refractive index of the silicon lens and the silicon substrate are consistent, the structure of the silicon lens bonded to the bottom of the micro-nano device allows the incident terahertz radiation to be efficiently focused on the surface of the structured material. Compared with the existing microlens directly bonded to the detection material structure, the advantage of this structure is that the lens does not directly contact the material, thus avoiding the influence of the lens surface on the device performance: first, the roughness of the lens surface is relatively low, much lower than the single-atom level flatness of the structured material based on the two-dimensional material, so it is easy to destroy the integrity of the two-dimensional structure after direct bonding, thereby introducing defects and reducing device performance; second, there will be more dangling bonds on the lens surface, and the direct bonding of the two-dimensional polariton structured material on the lens surface will increase the carrier scattering rate of the structured material and reduce the performance of the device; and, since the central resonance frequency of the two-dimensional polariton structured material is related to the medium environment, the direct contact of the lens with the two-dimensional polariton structured material will cause the central resonance frequency of the detection device to shift. The bonding process of the silicon lens to the bottom of the micro-nano device makes the terahertz focus of the silicon lens fall on the two-dimensional polariton order material, that is, the hemispherical or hyper-hemispherical silicon lens coated with an anti-reflection film is used to efficiently focus the incident terahertz electromagnetic field on the surface of the two-dimensional polariton order, further enhancing the material's absorption of terahertz waves.

[0051] In addition, the general diameter size of the hemispherical silicon lens is 1 inch, and the size can be adjusted according to different application requirements.

[0052] (3) Figure 3As shown, a first metal shell 10 is arranged outside the silicon lens 8 to fix the silicon lens 8 and the terahertz micro-nano device based on the two-dimensional polariton sequence, and plays the role of electromagnetic shielding to reduce the noise of the detection device.

[0053] (4) Figure 4 As shown, a second metal shell 11 is arranged on one side of the first metal shell 10 close to the terahertz micro-nano device based on the two-dimensional polariton sequence. The second metal shell 11 includes a first metal pin 12 and a second metal pin 13 and an insulating protective layer 14 surrounding the first metal pin and the second metal pin. The insulating protective layer is arranged to prevent the metal pin from being conductive to the metal shell. The second metal shell 11 is arranged to provide a circuit for reading the photoelectric signal of the micro-nano detection device and to play an electromagnetic shielding role.

[0054] (5) Figure 5 As shown, a spot welding machine is used to connect the source metal electrode 3 and the first metal pin 12 through the first metal lead 15, the gate metal electrode 1 and the second metal pin 13 are connected through the second metal lead 16, and the drain metal electrode 4 and the second metal shell 11 are connected through the third metal lead 17; the diameters of the first metal lead 15, the second metal lead 16 and the third metal lead 17 are all 60μm, and the material is alloy wire, which can be gold wire in other embodiments.

[0055] The purpose of setting the metal lead is to connect the source, drain and gate of the micro-nano detection device and the source, drain and gate of the metal cathode respectively, wherein the drain of the device is directly connected to the second metal shell and serves as a common ground terminal.

[0056] (6) Figure 6 As shown, an insulating sealant is filled into the gap between the integrated module and the second metal shell 11 to form an insulating sealant layer 18, which is used to fix the first metal lead 15, the second metal lead 16 and the third metal lead 17, remove air, and fix the silicon lens and the micro-nano detection chip to improve the mechanical stability and working performance stability of the device. In this embodiment, the insulating sealant is polyimide, and in other embodiments it can be polyurethane glue or epoxy resin.

[0057] (7) Figure 7 As shown, a third metal shell 19 is disposed below the second metal shell 11 . The third metal shell 19 is the bottom structure of the packaging structure and plays a role in sealing and electromagnetic shielding.

[0058] Comparative Example 1

[0059] The difference from Example 1 is that in step (2), the silicon lens is directly bonded to the surface of the micro-nano device material to obtain an integrated module.

[0060] If the silicon lens is directly bonded to the surface of the micro-nano device material, it is easy to destroy the integrity of the two-dimensional structure, thereby introducing defects and reducing device performance. In addition, since the central resonance frequency of the two-dimensional polaritons structure material is related to the medium environment, the direct contact of the lens with the two-dimensional polaritons structure material will cause the central resonance frequency of the detection device to shift.

[0061] Comparative Example 2

[0062] The difference from Example 1 is that in step (1), the thickness of the two-dimensional polariton structured material layer is greater than 10 nm.

[0063] In this comparative example, the thickness of the material layer based on the two-dimensional polaritons structure is too large to produce the polaritons effect.

[0064] Comparative Example 3

[0065] The difference from Example 1 is that in step (1), the thickness of the hafnium oxide dielectric layer is 10 nm.

[0066] In this comparative example, the thickness of the hafnium oxide dielectric layer is too small, which easily leads to gate leakage and makes it impossible for the gate to well regulate the plasmon polariton center resonance frequency of the detection device.

[0067] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A packaging method for a two-dimensional polaritons structured terahertz micro-nano device, characterized in that: The following steps are involved: (1) preparing a terahertz micro-nano device based on a two-dimensional polaritons structure, wherein the structure of the terahertz micro-nano device based on a two-dimensional polaritons structure includes a gate metal electrode, a hafnium oxide or aluminum oxide dielectric layer, a source metal electrode, a drain metal electrode, a two-dimensional polaritons structure material layer, a silicon oxide insulating layer, and a silicon substrate layer; (2) bonding the silicon substrate layer to the bottom of the silicon lens to obtain an integrated module; (3) a first metal housing is provided on the outer side of the silicon lens for fixing the integrated module; (4) disposing a second metal shell on a side of the first metal shell close to the micro-nano device, wherein the second metal shell includes a first metal pin and a second metal pin; (5) connecting the source metal electrode to the first metal pin through a first metal lead, connecting the gate metal electrode to the second metal pin through a second metal lead, and connecting the drain metal electrode to the second metal housing through a third metal lead; (6) filling the gap between the integrated module and the second metal housing with insulating sealant to fix the first metal lead, the second metal lead, and the third metal lead; (7) A third metal shell is disposed below the second metal shell.

2. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (1), the thickness of the gate metal electrode is 20-50 nm, the thickness of the source metal electrode is 20-200 nm, and the thickness of the drain metal electrode is 20-200 nm.

3. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (1), the thickness of the hafnium oxide or aluminum oxide dielectric layer is 20-200 nm.

4. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (1), the thickness of the two-dimensional polariton-structured material layer is no more than 10 nm.

5. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (1), the thickness of the silicon oxide insulating layer is 300 nm.

6. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (1), the thickness of the silicon substrate layer is 500 μm.

7. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (2), the silicon lens is a hemispherical silicon lens or a super hemispherical silicon lens.

8. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (5), the diameters of the first metal lead, the second metal lead and the third metal lead are all 18-80 μm.

9. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: In step (6), the insulating sealant includes at least one of polyimide, polyurethane glue, and epoxy resin.

10. The packaging method of the two-dimensional polaritons structured terahertz micro-nano device according to claim 1, characterized in that: An anti-reflection film is provided on the surface of the silicon lens.

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