Optical isolation power controller for controlling large current output by low current and structure thereof

Abstract

The invention provides an optical isolation power controller for controlling large current output by low current and a structure thereof. Comprising an input circuit module, an isolation driving circuit and an output power module, the input circuit module is connected with a Ctl terminal and a Bis terminal, driving energy is provided through the Bis terminal, the Ctl terminal triggers the driving energy in a low-current control mode, an electric signal is input into the isolation driving circuit, and the output power module is connected with the isolation driving circuit. The isolation driving circuit carries out electric-optical-electric conversion on the electric signals and then inputs the electric signals to the output power module to control on-off of the field effect transistor. The isolation driving circuit comprises a light-emitting diode D1 and a photovoltaic diode array E1 which are opposite to each other and a light-emitting diode D2 and a photovoltaic diode array E2 which are opposite to each other. The input module with small current and the output module with large current are arranged to be of a stacked structure, so that the large current and the small current are isolated, and electromagnetic interference is avoided; and the field effect transistor, the optical coupler assembly and the peripheral assembly are respectively arranged at different heights for physical isolation, so that mutual interference among chips is reduced.

Description

Technical Field

[0001] The invention relates to an optical isolation power controller for controlling high current output with low current and its structure. Background Art

[0002] There are three types of packaging for common power controllers: plastic packaging, metal packaging, and ceramic metal packaging. The plastic packaging structure uses a metal frame to bond the chip, and the external plastic packaging material is thermoformed to achieve the corresponding power control function. The advantages of this structure are small size, light weight, low cost, and mass production; the disadvantages are poor thermal stability, poor corrosion resistance, poor moisture resistance, poor heat dissipation, low long-term reliability, and a narrow operating temperature range. The metal packaging structure uses a metal shell to package chips or components to achieve the power controller function. The advantages of this structure are good thermal conductivity, moisture resistance, corrosion resistance, impact resistance, good shielding, and a wide operating temperature range. The disadvantages are heavy weight, high material cost, and difficulty in processing. The ceramic metal packaging structure uses a ceramic metal shell to encapsulate chips or components to realize the relay function. The advantages of this structure are good insulation performance, wear resistance, corrosion resistance, impact resistance, light weight, small size, low material cost, better thermal conductivity than plastic-sealed devices, good shielding, and a large operating temperature range. The disadvantages are that it is fragile, not impact-resistant, has a higher on-resistance than plastic sealing, is difficult to process, and has a long processing cycle. Summary of the invention

[0003] In order to solve the above technical problems, the invention provides an optical isolation power controller and its structure for controlling high current output with low current.

[0004] The invention is achieved through the following technical solutions.

[0005] The present invention provides an optical isolation power controller for controlling a large current output with a low current; the controller comprises an input circuit module, an isolation driving circuit and an output power module, wherein the input circuit module is respectively connected to a Ctl terminal and a Bais terminal, and driving energy is provided through the Bais terminal; the Ctl terminal triggers the driving energy through a low current control mode, and an electric signal is input to the isolation driving circuit; the isolation driving circuit converts the electric signal from electric to optical to electric, and then inputs the electric signal to the output power module to control the on and off of a field effect tube; the isolation driving circuit comprises a relative light emitting diode D1 and a photovoltaic diode array E1, and a relative light emitting diode D2 and a photovoltaic diode array E2.

[0006] The input circuit module includes a field effect transistor V1, a source, a drain and a gate of the field effect transistor V1 are respectively connected to a resistor R1, a Bais terminal and a resistor R2, the other ends of the resistors R1 and R2 are connected to the anode of a light-emitting diode D1, the cathode of the light-emitting diode D1 is connected to the anode of a light-emitting diode D2, the cathode of the light-emitting diode D2 is connected to the cathode of a voltage-stabilizing diode D3, the anode of the voltage-stabilizing diode D3 is connected to the collector of the transistor V2, a resistor R4 and a capacitor C1 are connected in parallel at both ends of the base and emitter of the transistor V2, a resistor R3 is connected in series between the base and Ctl terminal of the transistor V2, the emitter of the transistor V2 is connected to the anode of the diode D4, and the cathode of the diode D4 is connected to the Gnd terminal.

[0007] The output power module includes a field effect transistor V3, the drain of which is connected to the OUT+ terminal, the source of which is connected to the OUT- terminal, the gate of which is connected to the resistor R5, the other end of which is connected to the cathode of the Zener diode D5, the anode of the Zener diode D5 is connected to the source of the field effect transistor V3, and the photovoltaic diode array E1 and the photovoltaic diode array E2 are connected in series and then connected in parallel at both ends of the Zener diode D5.

[0008] The input circuit module is mounted on the lower end surface of the ceramic substrate, the ceramic substrate is mounted on the upper end of the shell, the output power module is mounted on the bottom end of the shell, the bottom of the shell is equipped with lead terminals connected to the input circuit module and the output power module, and the top of the shell is equipped with a cover plate.

[0009] A square hole is processed at one end of the bottom of the shell, and a photovoltaic platform is provided along its side wall at the other end. A support platform is processed at the upper end of the inner side wall of the shell. The photovoltaic diode array E shell and the photovoltaic diode array E edge ring are installed on the photovoltaic platform. The voltage regulator diode D molybdenum-copper alloy sheet and the resistor R lead-out terminal are installed on the bottom plate of the shell. The field effect tube V cover plate is installed on the molybdenum-copper alloy sheet. The molybdenum-copper alloy sheet is fixed and closed under the square hole. The photovoltaic diode array E shell, the photovoltaic diode array E edge ring, the voltage regulator diode D molybdenum-copper alloy sheet, the resistor R lead-out terminal, and the field effect tube V cover plate are connected by bonding wires; the ceramic substrate is installed on the support platform.

[0010] The photovoltaic station is processed with a transfer groove along the side wall of the shell, and a metal sheet is arranged in the transfer groove to connect with the lead-out terminal at the bottom of the shell; the drain of the field effect tube E cover is attached to the molybdenum-copper alloy sheet, and the source is connected to the metal sheet through an aluminum wire.

[0011] One end of the ceramic substrate is provided with an anti-reverse protrusion, and the lower end surface of the other end is provided with three connecting terminals. The anti-reverse protrusion is assembled in a positioning groove processed at one end of the support platform, and the three connecting terminals are respectively connected to the three lead plates of the other end of the support platform. The three connecting terminals are connected to the input circuit module, and the three lead plates are respectively connected to the lead-out terminals at the bottom of the shell.

[0012] The anti-reverse protrusion is processed with a metallized area, and the end surface of the ceramic substrate is vacant and processed with a plurality of circular holes.

[0013] The lead-out terminals include an OUT+ terminal, an OUT- terminal, a Bais terminal, a Ctl terminal, and a GND terminal. The OUT+ terminal is arranged on a molybdenum-copper alloy sheet at one end of the bottom of the shell, and the OUT- terminal and the Bais terminal, the Ctl terminal, and the GND terminal are arranged at the other end of the lead-out terminals, and the Bais terminal, the Ctl terminal, and the GND terminal are arranged in parallel along one side edge of the shell.

[0014] The beneficial effects of the invention are as follows: by arranging the input module for a small current and the output module for a large current into a stacked structure, the large and small currents are isolated and electromagnetic interference is avoided; the field effect tube, the optical coupler component and the peripheral components are installed at different heights for physical isolation, thereby reducing mutual interference between chips; the field effect tube is directly installed on the copper-molybdenum-copper alloy sheet and used directly as a terminal, which can reduce the on-resistance of the product from 4mΩ to 1mΩ, reduce the power consumption of the product itself, and can stably operate at a current of 20A without a heat sink. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of the circuit principle of the invention;

[0016] Figure 2 It is a schematic diagram of the cross-sectional structure of the invention;

[0017] Figure 3 It is a schematic diagram of the structure of the output power module of the invention;

[0018] Figure 4 It is a schematic diagram of the structure of the input circuit module of the invention;

[0019] Figure 5 It is a schematic diagram of the cover structure of the invention;

[0020] Figure 6 It is a schematic diagram of the terminal arrangement of the invention;

[0021] In the figure: 1-housing, 11-square hole, 12-bottom plate, 13-photovoltaic platform, 14-support platform, 15-positioning groove, 16-adapter groove, 17-lead plate, 2-edge sealing ring, 3-cover plate, 4-ceramic substrate, 41-connecting terminal, 42-metallized area, 43-anti-reverse protrusion, 5-molybdenum-copper alloy sheet, 6-lead terminal, 7-bonding wire. DETAILED DESCRIPTION

[0022] The technical solution of the invention is further described below, but the scope of protection claimed is not limited to the above.

[0023] The present invention provides an optical isolation power controller for controlling a large current output with a low current; the controller comprises an input circuit module, an isolation driving circuit and an output power module, wherein the input circuit module is respectively connected to a Ctl terminal and a Bais terminal, and driving energy is provided through the Bais terminal; the Ctl terminal triggers the driving energy through a low current control mode, and an electric signal is input to the isolation driving circuit; the isolation driving circuit converts the electric signal from electric to optical to electric, and then inputs the electric signal to the output power module to control the on and off of a field effect tube; the isolation driving circuit comprises a relative light emitting diode D1 and a photovoltaic diode array E1, and a relative light emitting diode D2 and a photovoltaic diode array E2.

[0024] Furthermore, the input circuit module includes a field effect transistor V1, the source, drain and gate of the field effect transistor V1 are respectively connected to the resistor R1, the Bais terminal and the resistor R2, the other ends of the resistors R1 and R2 are connected and connected to the anode of the light-emitting diode D1, the cathode of the light-emitting diode D1 is connected to the anode of the light-emitting diode D2, the cathode of the light-emitting diode D2 is connected to the cathode of the voltage-stabilizing diode D3, the anode of the voltage-stabilizing diode D3 is connected to the collector of the transistor V2, the base and emitter of the transistor V2 are connected in parallel with the resistor R4 and the capacitor C1, the base of the transistor V2 and the Ctl terminal are connected in series with the resistor R3, the emitter of the transistor V2 is connected to the anode of the diode D4, and the cathode of the diode D4 is connected to the Gnd terminal.

[0025] Furthermore, the output power module includes a field effect transistor V3, the drain of which is connected to the OUT+ terminal, the source of which is connected to the OUT- terminal, the gate of which is connected to the resistor R5, the other end of the resistor R5 is connected to the cathode of the Zener diode D5, the anode of the Zener diode D5 is connected to the source of the field effect transistor V3, and the photovoltaic diode array E1 and the photovoltaic diode array E2 are connected in series and then connected in parallel at both ends of the Zener diode D5.

[0026] Depletion-type field effect transistor V1, resistor R1, and resistor R2 form a very simple constant current circuit, which can be used for but not limited to a constant current in the range of 5V to 60V; resistor R3, resistor R4, capacitor C1, switch diode D4, and transistor V2 form a low current control circuit that prevents reverse damage, and the control current is less than 1mA, which can realize direct control of the microprocessor; photovoltaic diode array E1, photovoltaic diode array E2, voltage regulator diode D5, resistor R5, and field effect transistor V3 form a power output part, photovoltaic diode array E1 and photovoltaic diode array E2 increase the driving voltage, resistor R5 prevents field effect transistor V3 from high-frequency self-oscillation, and voltage regulator diode D5 prevents electrostatic damage.

[0027] The input circuit module is mounted on the lower end surface of the ceramic substrate 4, the ceramic substrate 4 is mounted on the upper end of the housing 1, the output power module is mounted on the bottom end of the housing 1, the bottom of the housing 1 is equipped with a lead terminal 6 connected to the input circuit module and the output power module, and the top of the housing 1 is equipped with a cover plate 3. The metal paste and the resistor paste are printed on the ceramic substrate using a thick film process; the depletion field effect transistor V1, the capacitor C1, the infrared light emitting diode D1, the infrared light emitting diode D2, the voltage regulator diode D3, the switch diode D4, and the triode V2 are all bare chips to reduce the product height and improve the integration; the surface is printed with glass encapsulation paste for pad plasticity and conduction band protection.

[0028] The output power component and the input circuit module adopt an upper and lower structure. The infrared light-emitting diode D1 and the infrared light-emitting diode D2 are respectively perpendicular to the photovoltaic diode array E1 and the photovoltaic diode array E2 to improve the light receiving efficiency; the field effect tube V3 adopts a gold-tin solder sheet sintered on a copper-molybdenum-copper alloy sheet, which can reduce the product's on-resistance from 4mΩ to 1mΩ, thereby improving the product's current carrying capacity; the metal paste and the resistor paste are printed on the ceramic substrate using a thick film process; the depletion-type field effect tube V1, the capacitor C1, the infrared light-emitting diode D1, the infrared light-emitting diode D2, the voltage-stabilizing diode D3, the switching diode D4, and the transistor V2 all adopt bare chips to reduce the product height and improve the integration; the surface is printed with glass encapsulation paste for pad plasticity and conduction band protection.

[0029] A square hole 11 is processed at one end of the bottom of the shell 1, and a photovoltaic platform 13 is provided along its side wall at the other end. A support platform 14 is processed at the upper end of the inner wall of the shell 1. The photovoltaic diode array E shell 1 and the photovoltaic diode array E edge ring 2 are installed on the photovoltaic platform 13, the voltage regulator diode D molybdenum-copper alloy sheet 5 and the resistor R lead terminal 6 are installed on the bottom plate of the shell 1, and the field effect tube V cover plate 3 is installed on the molybdenum-copper alloy sheet 5. The molybdenum-copper alloy sheet 5 is fixed and closed under the square hole 11, so that the field effect tube can directly use the molybdenum-copper alloy sheet as the output terminal. The photovoltaic diode array E shell 1, the photovoltaic diode array E edge ring 2, the voltage regulator diode D molybdenum-copper alloy sheet 5, the resistor R lead terminal 6, and the field effect tube V cover plate 3 are connected by bonding wires 7; the ceramic substrate 4 is installed on the support platform 14.

[0030] The photovoltaic platform 13 is processed with a transfer groove 16 along the side wall of the shell 1, and a metal sheet is arranged in the transfer groove 16 to connect with the lead-out terminal 6 at the bottom of the shell 1; the drain of the field effect tube E cover plate 3 is attached to the molybdenum-copper alloy sheet 5, and the source is connected to the metal sheet through an aluminum wire.

[0031] One end of the ceramic substrate 4 is provided with an anti-reverse protrusion 43, and the lower end surface of the other end is provided with three connecting terminals 41, the anti-reverse protrusion 43 is assembled in the positioning groove 15 processed at one end of the support platform 14, and the three connecting terminals 41 are respectively connected to the three lead plates 17 at the other end of the support platform 14, and the three connecting terminals 41 are connected to the input circuit module, and the three lead plates 17 are respectively connected to the lead-out terminals 6 at the bottom of the shell 1.

[0032] The anti-reverse protrusion 43 is processed with a metallized area 42, and the end surface of the ceramic substrate 4 is vacant and processed with a plurality of circular holes.

[0033] The lead-out terminal 6 includes an OUT+ terminal, an OUT- terminal, a Bais terminal, a Ctl terminal, and a GND terminal. The OUT+ terminal is arranged at a molybdenum-copper alloy sheet 5 at one end of the bottom of the housing 1. The OUT- terminal and the Bais terminal, the Ctl terminal, and the GND terminal are arranged at the other end of the lead-out terminal 6, and the Bais terminal, the Ctl terminal, and the GND terminal are arranged parallel to one side edge of the housing 1. The output end of the output power component adopts a copper-molybdenum-copper alloy sheet to reduce the power consumption of the product itself, and can work at a current of 20A without a heat sink. This power chip eliminates the ceramic layer by sintering gold-tin solder, reduces the internal thermal resistance of the product, and improves the heat dissipation capacity of the product.

Claims

1. An optical isolation power controller for controlling high current output with low current, characterized in that: It includes an input circuit module, an isolation drive circuit, and an output power module. The input circuit module is connected to the Ctl terminal and the Bais terminal respectively, and provides driving energy through the Bais terminal. The Ctl terminal triggers the driving energy through a low current control method, and inputs the electrical signal to the isolation drive circuit. The isolation drive circuit converts the electrical signal into electricity, light, and electricity, and then inputs it into the output power module to control the on and off of the field effect tube. The isolation drive circuit includes a relative light-emitting diode D1 and a photovoltaic diode array E1 and a relative light-emitting diode D2 and a photovoltaic diode array E2.

2. The optical isolation power controller for controlling high current output with low current as claimed in claim 1, characterized in that: The input circuit module includes a field effect transistor V1, a source, a drain and a gate of the field effect transistor V1 are respectively connected to a resistor R1, a Bais terminal and a resistor R2, the other ends of the resistors R1 and R2 are connected to the anode of a light-emitting diode D1, the cathode of the light-emitting diode D1 is connected to the anode of a light-emitting diode D2, the cathode of the light-emitting diode D2 is connected to the cathode of a voltage-stabilizing diode D3, the anode of the voltage-stabilizing diode D3 is connected to the collector of the transistor V2, a resistor R4 and a capacitor C1 are connected in parallel at both ends of the base and emitter of the transistor V2, a resistor R3 is connected in series between the base and Ctl terminal of the transistor V2, the emitter of the transistor V2 is connected to the anode of the diode D4, and the cathode of the diode D4 is connected to the Gnd terminal.

3. The optical isolation power controller for controlling high current output with low current as claimed in claim 1, characterized in that: The output power module includes a field effect transistor V3, the drain of which is connected to the OUT+ terminal, the source of which is connected to the OUT- terminal, the gate of which is connected to the resistor R5, the other end of which is connected to the cathode of the Zener diode D5, the anode of the Zener diode D5 is connected to the source of the field effect transistor V3, and the photovoltaic diode array E1 and the photovoltaic diode array E2 are connected in series and then connected in parallel at both ends of the Zener diode D5.

4. The structure of an optically isolated power controller according to any one of claims 1 to 3, comprising a housing (1), characterized in that: The input circuit module is mounted on the lower end surface of a ceramic substrate (4), the ceramic substrate (4) is mounted on the upper end of the housing (1), the output power module is mounted on the bottom end of the housing (1), a lead terminal (6) is mounted on the bottom of the housing (1) and is connected to the input circuit module and the output power module, and a cover plate (3) is mounted on the top of the housing (1).

5. The structure of an optical isolation power controller as claimed in claim 1, characterized in that: A square hole (11) is machined at one end of the bottom of the shell (1), and a photovoltaic platform (13) is arranged along the side wall of the other end; a support platform (14) is machined at the upper end of the inner side wall of the shell (1); the photovoltaic diode array E shell (1) and the photovoltaic diode array E edge sealing ring (2) are mounted on the photovoltaic platform (13); the voltage regulator diode D molybdenum-copper alloy sheet (5) and the resistor R lead terminal (6) are mounted on the bottom plate of the shell (1); the field effect transistor V cover plate (3) is mounted on the molybdenum-copper alloy sheet (5); the molybdenum-copper alloy sheet (5) is fixed and sealed below the square hole (11); the photovoltaic diode array E shell (1), the photovoltaic diode array E edge sealing ring (2), the voltage regulator diode D molybdenum-copper alloy sheet (5), the resistor R lead terminal (6), and the field effect transistor V cover plate (3) are connected by bonding wires (7); and the ceramic substrate (4) is mounted on the support platform (14).

6. The structure of an optical isolation power controller as claimed in claim 5, characterized in that: A transfer groove (16) is machined on the side wall of the outer shell (1) beside the photovoltaic platform (13), and a metal sheet is arranged in the transfer groove (16) to be connected to the lead-out terminal (6) at the bottom of the outer shell (1); the drain electrode of the field effect tube E cover plate (3) is attached to the molybdenum-copper alloy sheet (5), and the source electrode is connected to the metal sheet via an aluminum wire.

7. The structure of an optical isolation power controller as claimed in claim 1, characterized in that: One end of the ceramic substrate (4) is provided with an anti-reverse protrusion (43), and the lower end surface of the other end is provided with three connection terminals (41); the anti-reverse protrusion (43) is assembled in a positioning groove (15) processed at one end of the support platform (14); the three connection terminals (41) are respectively connected to three lead plates (17) at the other end of the support platform (14); the three connection terminals (41) are connected to the input circuit module; and the three lead plates (17) are respectively connected to the lead-out terminals (6) at the bottom of the housing (1).

8. The structure of an optical isolation power controller as claimed in claim 7, characterized in that: The anti-reflection protrusion (43) is processed with a metallized area (42), and a plurality of circular holes are processed and left vacant on the end surface of the ceramic substrate (4).

9. The structure of an optical isolation power controller as claimed in claim 7, characterized in that: The lead-out terminal (6) comprises an OUT+ terminal, an OUT- terminal, a Bais terminal, a Ctl terminal, and a GND terminal; the OUT+ terminal is arranged on a molybdenum-copper alloy sheet (5) at one end of the bottom of the housing (1); the OUT- terminal and the Bais terminal, the Ctl terminal, and the GND terminal are arranged at the other end of the lead-out terminal (6); and the Bais terminal, the Ctl terminal, and the GND terminal are arranged in parallel along a side edge of the housing (1).

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