Radiation hardening circuit capable of rapidly discharging radiation charges

Abstract

The invention discloses a radiation hardening circuit capable of rapidly discharging radiation charges, and relates to the field of semiconductor integrated circuit design. The invention aims to solve the problems that an existing circuit-level anti-radiation hardening mode is large in area and high in power consumption and cannot be applied to anti-radiation hardening design of an analog circuit. The voltage generation circuit is used for providing voltage for the charge discharge circuit to trigger the charge discharge circuit, so that charges radiated to the output node of the charge discharge circuit are discharged. When positive charge pulses generated by radiation particles make positive voltage pulses appear at the output end, positive voltage pulses appear at the grid electrode of the positive charge discharge tube, the positive charge discharge tube is conducted, and the negative charge discharge tube is closed, so that positive charges radiated to the output end are discharged; when the negative charge pulse generated by the radiation particles causes the negative voltage pulse to appear at the output end, the negative voltage pulse appears at the grid electrode of the negative charge discharge tube, the negative charge discharge tube is conducted, and the positive charge discharge tube is closed, so that the negative charge radiated to the output end is discharged.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor integrated circuit design. Background Art

[0002] There are various radiation sources in the universe, such as protons, neutrons, electrons, heavy ions and high-energy rays. When a spacecraft flies in the universe, it will interact with the high-energy charged particles emitted by the radiation sources. When the advanced microelectronic circuits and systems in the spacecraft are bombarded by high-energy charged particles, the radiation effects produced will cause instantaneous or permanent failures.

[0003] From the 1970s to the mid-1980s, satellite failures caused by space radiation accounted for 71% of the total failures. Many satellite anomalies and failures are related to abnormal charging and discharging of sensitive circuit nodes and degradation of device electrical characteristics caused by space particle radiation. Therefore, the radiation effects of circuits or devices caused by high-energy particle radiation in space have become the main factor affecting the reliable application of integrated circuits in space, and it is necessary to carry out radiation hardening design for integrated circuits in these application scenarios.

[0004] Radiation hardening can be divided into process-level, layout-level, circuit-level and system-level hardening. Usually, process-level hardening requires the participation of manufacturers and incurs high costs, while layout-level, circuit-level or system-level hardening does not require any modification to the existing process or violation of design rules. Circuit-level radiation hardening is generally achieved by adding redundant structures, but this method often brings about a large area and power consumption, and redundant structures are difficult to apply in the radiation hardening design of analog circuits. Therefore, a circuit-level radiation hardening method that consumes less circuit area and power and can be applied to analog circuits is urgently needed. Summary of the invention

[0005] The present invention aims to solve the problems that the existing circuit-level radiation-resistant reinforcement methods have large area, high power consumption, and cannot be applied to the radiation-resistant reinforcement design of analog circuits. An radiation-resistant reinforcement circuit is provided that generates charges by quickly discharging radiation, thereby realizing radiation-resistant reinforcement of circuit nodes.

[0006] An anti-radiation hardening circuit for rapidly discharging radiation charges comprises a voltage generating circuit and a charge discharging circuit, wherein the voltage generating circuit is used to provide a voltage to the charge discharging circuit to trigger the charge discharging circuit so that the charges radiated to the output node of the charge discharging circuit are discharged.

[0007] Further, the voltage generating circuit is a bias circuit, and the charge discharge circuit includes positive and negative charge discharge circuits;

[0008] The bias voltage output terminal of the bias circuit is respectively connected to the bias voltage input terminals of the positive and negative charge discharge circuits, and the output terminals of the positive and negative charge discharge circuits are connected and serve as output nodes of the anti-radiation reinforcement circuit.

[0009] Further, the bias circuit comprises: a bias voltage source VSP, a bias resistor RP, a bias voltage source VSN and a bias resistor RN;

[0010] The negative electrodes of the bias voltage source VSP and the bias voltage source VSN are both connected to the power ground.

[0011] The positive electrode of the bias voltage source VSP is connected to the voltage input terminal of the negative charge discharge circuit, and the bias resistor RP is connected in series between the bias voltage source VSP and the negative charge discharge circuit;

[0012] The positive electrode of the bias voltage source VSN is connected to the voltage input terminal of the positive charge discharge circuit, and the bias resistor RN is connected in series between the bias voltage source VSN and the positive charge discharge circuit.

[0013] Furthermore, the positive charge discharge circuit includes: a coupling capacitor CN and a positive charge discharge tube N1;

[0014] One end of the coupling capacitor CN serves as a bias voltage input end of the positive charge discharge circuit, the other end of the coupling capacitor CN is connected to the gate of the positive charge discharge tube N1, the source of the positive charge discharge tube N1 is connected to the power ground, and the drain of the positive charge discharge tube N1 and one end of the coupling capacitor CN are commonly connected to the output node of the anti-radiation hardening circuit.

[0015] Furthermore, the positive charge discharge tube N1 is an NMOS transistor.

[0016] Furthermore, the negative charge discharge circuit includes: a coupling capacitor CP and a negative charge discharge tube P1;

[0017] One end of the coupling capacitor CP and the gate of the negative charge discharge tube P1 are used together as the bias voltage input end of the negative charge discharge circuit, the other end of the coupling capacitor CP and the drain of the negative charge discharge tube P1 are connected to the output node of the anti-radiation hardening circuit, and the source of the negative charge discharge tube P1 is connected to the power supply end.

[0018] Furthermore, the negative charge discharge tube P1 is a PMOS transistor.

[0019] The beneficial effects of the technical solution provided by the present invention are:

[0020] In order to achieve anti-radiation reinforcement of circuit nodes under the condition of consuming less circuit area and power consumption, the anti-radiation reinforcement circuit for quickly discharging radiation charge described in the present invention can achieve anti-radiation reinforcement of circuit nodes by quickly discharging the charge generated by radiation particles at circuit nodes. The area and power consumption are small, and the impact on the circuit performance of the node is also small. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 The structure block diagram of a radiation hardening circuit for rapidly discharging radiation charge is shown;

[0022] Figure 2 A specific circuit structure diagram of an anti-radiation reinforcement circuit for rapidly discharging radiation charge;

[0023] Figure 3 The figure is a comparison diagram of the discharge effect of the anti-radiation hardening circuit on a positive charge pulse of a circuit node. a represents the response of the circuit node to the positive charge pulse when the anti-radiation hardening circuit is not added, and b represents the response of the circuit node to the positive charge pulse when the anti-radiation hardening circuit is added;

[0024] Figure 4 This is a comparison diagram of the discharge effect of the anti-radiation hardening circuit on a negative charge pulse of a circuit node. a represents the response of the circuit node to the negative charge pulse when the anti-radiation hardening circuit is not added, and b represents the response of the circuit node to the negative charge pulse when the anti-radiation hardening circuit is added. DETAILED DESCRIPTION

[0025] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work belong to the scope of protection of the present invention. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

[0026] Reference Figures 1 to 4 The present embodiment is specifically described. The present embodiment describes an anti-radiation hardening circuit for rapidly discharging radiation charges, including: a bias circuit, a positive charge discharging circuit, and a negative charge discharging circuit.

[0027] like Figure 1 As shown, the output end of the bias circuit is respectively connected to the input end of the positive charge discharge circuit and the negative charge discharge circuit to provide them with correct bias voltage; the output end of the positive charge discharge circuit and the output end of the negative charge discharge circuit are connected to serve as the output end OUT of the anti-radiation hardening circuit.

[0028] like Figure 2 As shown, the bias circuit includes: a positive charge discharge circuit bias voltage source VSN, a positive charge discharge circuit bias resistor RN, a negative charge discharge circuit bias voltage source VSP and a negative charge discharge circuit bias resistor RP; the negative electrode of the positive charge discharge circuit bias voltage source VSN is connected to the ground potential, the positive electrode is connected to one end of the positive charge discharge circuit bias resistor RN, and the other end of RN serves as an output terminal VBN of the bias circuit; the negative electrode of the negative charge discharge circuit bias voltage source VSP is connected to the ground potential, the positive electrode is connected to one end of the negative charge discharge circuit bias resistor RP, and the other end of RP serves as another output terminal VBP of the bias circuit.

[0029] The positive charge discharge circuit includes: a positive charge coupling capacitor CN and a positive charge discharge NMOS tube N1. The source of the positive charge discharge NMOS tube N1 is connected to the ground potential, one end of the positive charge coupling capacitor CN serves as the bias voltage input end of the positive charge discharge circuit, the other end of the positive charge coupling capacitor CN is connected to the gate of the positive charge discharge NMOS tube N1, the source of the positive charge discharge NMOS tube N1 is connected to the power supply ground, and the drain of the positive charge discharge NMOS tube N1 and one end of the positive charge coupling capacitor CN are commonly connected to the output node of the anti-radiation reinforcement circuit.

[0030] The negative charge discharge circuit includes: a negative charge coupling capacitor CP and a positive charge discharge PMOS tube P1. The source of the negative charge discharge PMOS tube P1 is connected to the power supply potential, the gate of the negative charge discharge PMOS tube P1 and one end of the negative charge coupling capacitor CP are commonly connected to the VBP end of the bias circuit, and the drain of the negative charge discharge PMOS tube P1 and the other end of the negative charge coupling capacitor CP are commonly connected to the output end OUT of the anti-radiation hardening circuit.

[0031] The principle of the radiation hardening circuit for rapidly discharging radiation charge described in this embodiment is as follows:

[0032] The positive charge discharge circuit bias voltage source VSN of the bias circuit provides a suitable DC bias voltage to the positive charge discharge circuit, so that the positive charge discharge tube N1 in the positive charge discharge circuit is in a state that is easily triggered by a positive voltage pulse, and the static leakage current in the non-triggering state is small; the positive charge discharge circuit bias resistor RN can isolate VSN from the positive charge discharge circuit, so that the positive charge discharge circuit can better couple the radiation particles to generate a positive voltage pulse; the negative charge discharge circuit bias voltage source VSP of the bias circuit provides a suitable DC bias voltage to the negative charge discharge circuit, so that the negative charge discharge tube P1 in the negative charge discharge circuit is in a state that is easily triggered by a negative voltage pulse, and the static leakage current in the non-triggering state is small; the negative charge discharge circuit bias resistor RP can isolate VSP from the negative charge discharge circuit, so that the negative charge discharge circuit can better couple the radiation particles to generate a negative voltage pulse. In the actual circuit, the bias circuit can be implemented with any suitable voltage generating circuit.

[0033] When the positive charge pulse generated by the radiation particles causes a positive voltage pulse to appear at the circuit node, i.e., the OUT node, the positive charge discharge circuit causes a positive voltage pulse to appear at the gate of the positive charge discharge tube N1 through the internal coupling capacitor CN. During the generation of this pulse, the positive charge discharge tube N1 is turned on, while the negative charge discharge tube P1 in the negative charge discharge circuit is turned off, so that the positive charge radiated to the OUT node can be quickly discharged; when the negative charge pulse generated by the radiation particles causes a negative voltage pulse to appear at the OUT node, the negative charge discharge circuit causes a negative voltage pulse to appear at the gate of the negative charge discharge tube P1 through the internal coupling capacitor CP. During the generation of this pulse, the negative charge discharge tube P1 is turned on, while the positive charge discharge tube N1 in the positive charge discharge circuit is turned off, so that the negative charge radiated to the OUT node can be quickly discharged.

[0034] When there is no radiation particle incident on the circuit, the positive charge discharge tube N1 in the positive charge discharge circuit is in a cut-off state due to the bias voltage VBN generated by the bias circuit, so there is only a small leakage current, which can be considered to be in a high-resistance state, so it will not generate a large power consumption, and at the same time, because the coupling capacitor CN is also small, the impact on the reinforced circuit node is also small; the negative charge discharge tube P1 in the negative charge discharge circuit is in a cut-off state due to the bias voltage VBP generated by the bias circuit, so there is only a small leakage current, which can be considered to be in a high-resistance state, so it will not generate a large power consumption, and at the same time, because the coupling capacitor CP is also small, the impact on the reinforced circuit node is also small. At the same time, because the bias resistor RN, the bias resistor RP, the coupling capacitor CN, the coupling capacitor CP, the positive charge discharge tube N1 and the negative charge discharge tube P1 do not need to be large to achieve the above functions, the area consumption is also small.

[0035] Although the present invention is described herein with reference to specific embodiments, it should be understood that these embodiments are merely examples of the principles and applications of the present invention. It should therefore be understood that many modifications may be made to the exemplary embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the various dependent claims and features described herein may be combined in a manner different from that described in the original claims. It should also be understood that the features described in conjunction with a single embodiment may be used in other described embodiments.

Claims

1. A radiation hardening circuit for rapidly discharging radiation charge, characterized in that: The invention comprises a voltage generating circuit and a charge discharging circuit, wherein the voltage generating circuit is used for providing a voltage to the charge discharging circuit to trigger the charge discharging circuit, so that the charge radiated to the output node of the charge discharging circuit is discharged.

2. The anti-radiation hardening circuit for rapidly discharging radiation charge according to claim 1, characterized in that: The voltage generating circuit is a bias circuit, and the charge discharge circuit includes positive and negative charge discharge circuits; The bias voltage output terminal of the bias circuit is respectively connected to the bias voltage input terminals of the positive and negative charge discharge circuits, and the output terminals of the positive and negative charge discharge circuits are connected and serve as output nodes of the anti-radiation reinforcement circuit.

3. The anti-radiation hardening circuit for rapidly discharging radiation charge according to claim 2, characterized in that: The bias circuit includes: a bias voltage source VSP, a bias resistor RP, a bias voltage source VSN and a bias resistor RN; The negative electrodes of the bias voltage source VSP and the bias voltage source VSN are both connected to the power ground. The positive electrode of the bias voltage source VSP is connected to the voltage input terminal of the negative charge discharge circuit, and the bias resistor RP is connected in series between the bias voltage source VSP and the negative charge discharge circuit; The positive electrode of the bias voltage source VSN is connected to the voltage input terminal of the positive charge discharge circuit, and the bias resistor RN is connected in series between the bias voltage source VSN and the positive charge discharge circuit.

4. The anti-radiation hardening circuit for rapidly discharging radiation charge according to claim 2, characterized in that: The positive charge discharge circuit includes: a coupling capacitor CN and a positive charge discharge tube N1; One end of the coupling capacitor CN serves as a bias voltage input end of the positive charge discharge circuit, the other end of the coupling capacitor CN is connected to the gate of the positive charge discharge tube N1, the source of the positive charge discharge tube N1 is connected to the power ground, and the drain of the positive charge discharge tube N1 and one end of the coupling capacitor CN are commonly connected to the output node of the anti-radiation hardening circuit.

5. The anti-radiation hardening circuit for rapidly discharging radiation charge according to claim 4, characterized in that: The positive charge discharge tube N1 is an NMOS transistor.

6. The anti-radiation hardening circuit for rapidly discharging radiation charge according to claim 2, characterized in that: The negative charge discharge circuit includes: a coupling capacitor CP and a negative charge discharge tube P1; One end of the coupling capacitor CP and the gate of the negative charge discharge tube P1 are used together as the bias voltage input end of the negative charge discharge circuit, the other end of the coupling capacitor CP and the drain of the negative charge discharge tube P1 are connected to the output node of the anti-radiation hardening circuit, and the source of the negative charge discharge tube P1 is connected to the power supply end.

7. The anti-radiation hardening circuit for rapidly discharging radiation charge according to claim 6, characterized in that: The negative charge discharge tube P1 is a PMOS transistor.

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