A radiation-hardened circuit for fast discharge of radiation charges

Abstract

The application discloses a kind of anti-radiation reinforcement circuits of fast radiation charge, it is related to the field of semiconductor integrated circuit design.The present application is to solve the problem of large area, large power consumption of existing circuit level anti-radiation reinforcement mode, and cannot be applied in the anti-radiation reinforcement design of analog circuit.The voltage generating circuit of the present application is used to provide voltage for charge discharge circuit to trigger charge discharge circuit, so that the charge radiated to the output node of charge discharge circuit is discharged.When the positive voltage pulse of output end appears due to the positive charge pulse generated by radiation particle, the gate of positive charge discharge tube appears positive voltage pulse, the positive charge discharge tube is turned on, and the negative charge discharge tube is closed, so that the positive charge radiated to the output end is discharged;When the negative voltage pulse of output end appears due to the negative charge pulse generated by radiation particle, the gate of negative charge discharge tube appears negative voltage pulse, the negative charge discharge tube is turned on, and the positive charge discharge tube is closed, so that the negative charge radiated to the output end is discharged.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor integrated circuit design. BACKGROUND

[0002] There are various radiation sources such as protons, neutrons, electrons, heavy ions and high-energy rays in the cosmic space. When a spacecraft flies in the cosmic space, the high-energy charged particles emitted by the radiation sources will interact with the spacecraft. After the advanced microelectronic circuits and systems in the spacecraft are subjected to the bombardment of the high-energy charged particles, the radiation effects will cause transient or permanent failure.

[0003] From the 1970s to the mid-1980s, the space radiation caused 71% of the total number of failures of the launched satellites. Many anomalies and failures of the satellites are related to the abnormal charging and discharging of the sensitive junctions of the circuits and the degradation of the electrical characteristics of the devices caused by the space particle radiation. Therefore, the radiation effects of the circuits or devices caused by the space high-energy particle radiation have become a major factor affecting the reliable application of the integrated circuits in space, and the integrated circuits in these scenarios need to be designed for radiation hardening.

[0004] The radiation hardening can be divided into process-level, layout-level, circuit-level and system-level hardening. Generally, the process-level hardening needs the participation of the manufacturer and high cost, while the layout-level, circuit-level or system-level hardening does not need to modify the existing process or violate the design rules. The circuit-level radiation hardening is generally achieved by increasing the redundant structure, but this method often brings great area and power consumption, and the redundant structure is difficult to apply to the radiation hardening design of analog circuits, so a circuit-level radiation hardening method with small area and power consumption and applicable to analog circuits is urgently needed. SUMMARY

[0005] The present application is to solve the problems of the existing circuit-level radiation hardening methods, such as large area, high power consumption and inability to be applied to the radiation hardening design of analog circuits, and provides a radiation hardening circuit for quickly discharging the radiation-generated charges, so as to realize the radiation hardening of the circuit nodes.

[0006] A radiation hardening circuit for quickly discharging the radiation charges, comprising a voltage generating circuit and a charge discharging circuit, the voltage generating circuit is used to provide voltage for the charge discharging circuit to trigger the charge discharging circuit, so that the charges radiated to the output node of the charge discharging circuit are discharged.

[0007] Further, the voltage generating circuit is a bias circuit, and the charge discharging circuit comprises positive and negative charge discharging circuits.

[0008] The bias voltage output ends of the bias circuit are connected to the bias voltage input ends of the positive and negative charge leakage circuits respectively, and the output ends of the positive and negative charge leakage circuits are connected and serve as the output nodes of the anti-radiation reinforcement circuit.

[0009] Further, the bias circuit comprises a bias voltage source VSP, a bias resistor RP, a bias voltage source VSN and a bias resistor RN.

[0010] The negative poles of the bias voltage source VSP and the bias voltage source VSN are connected to the power supply ground,

[0011] The positive pole of the bias voltage source VSP is connected to the voltage input end of the negative charge leakage circuit, and the bias resistor RP is connected in series between the bias voltage source VSP and the negative charge leakage circuit.

[0012] The positive pole of the bias voltage source VSN is connected to the voltage input end of the positive charge leakage circuit, and the bias resistor RN is connected in series between the bias voltage source VSN and the positive charge leakage circuit.

[0013] Further, the positive charge leakage circuit comprises a coupling capacitor CN and a positive charge leakage tube N1.

[0014] One end of the coupling capacitor CN serves as the bias voltage input end of the positive charge leakage circuit, the other end of the coupling capacitor CN is connected to the gate of the positive charge leakage tube N1, the source of the positive charge leakage tube N1 is connected to the power supply ground, and the drain of the positive charge leakage tube N1 is connected to the output nodes of the anti-radiation reinforcement circuit together with one end of the coupling capacitor CN.

[0015] Further, the positive charge leakage tube N1 is an NMOS transistor.

[0016] Further, the negative charge leakage circuit comprises a coupling capacitor CP and a negative charge leakage tube P1.

[0017] One end of the coupling capacitor CP and the gate of the negative charge leakage tube P1 together serve as the bias voltage input end of the negative charge leakage circuit, the other end of the coupling capacitor CP and the drain of the negative charge leakage tube P1 are connected to the output nodes of the anti-radiation reinforcement circuit together, and the source of the negative charge leakage tube P1 is connected to the power supply end.

[0018] Further, the negative charge leakage tube P1 is a PMOS transistor.

[0019] The technical scheme provided by the application has the beneficial effects that:

[0020] In order to realize the anti-radiation reinforcement of the circuit node with less circuit area and power consumption, the anti-radiation reinforcement circuit for rapidly discharging the radiation charge can realize the anti-radiation reinforcement of the circuit node by rapidly discharging the charge generated by the radiation particle at the circuit node, the area and power consumption are less, and the influence on the circuit performance of the node is also less. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 It is a structure block diagram of the anti-radiation reinforcement circuit for rapidly discharging the radiation charge;

[0022] Figure 2 It is a specific circuit structure diagram of the anti-radiation reinforcement circuit for rapidly discharging the radiation charge;

[0023] Figure 3 It is a comparison diagram of the discharge effect of the anti-radiation reinforcement circuit on the positive charge pulse of a circuit node, a represents the response of the circuit node to the positive charge pulse without the anti-radiation reinforcement circuit, and b represents the response of the circuit node to the positive charge pulse with the anti-radiation reinforcement circuit;

[0024] Figure 4 It is a comparison diagram of the discharge effect of the anti-radiation reinforcement circuit on the negative charge pulse of a circuit node, a represents the response of the circuit node to the negative charge pulse without the anti-radiation reinforcement circuit, and b represents the response of the circuit node to the negative charge pulse with the anti-radiation reinforcement circuit. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0026] REFERENCE Figures 1 to 4 For specifically describing the present embodiment, the anti-radiation reinforcement circuit for rapidly discharging the radiation charge comprises a bias circuit, a positive charge discharge circuit and a negative charge discharge circuit.

[0027] As Figure 1 shown, the output ends of the bias circuit are connected to the input ends of the positive charge discharge circuit and the negative charge discharge circuit respectively to provide correct bias voltage for them; the output end of the positive charge discharge circuit and the output end of the negative charge discharge circuit are connected to serve as the output end OUT of the anti-radiation reinforcement circuit.

[0028] AsFigure 2 As shown, the bias circuit includes: a positive charge leakage circuit bias voltage source VSN, a positive charge leakage circuit bias resistor RN, a negative charge leakage circuit bias voltage source VSP and a negative charge leakage circuit bias resistor RP; the negative pole of the positive charge leakage circuit bias voltage source VSN is connected to the ground potential, the positive pole is connected to one end of the positive charge leakage circuit bias resistor RN, the other end of RN is an output end VBN of the bias circuit; the negative pole of the negative charge leakage circuit bias voltage source VSP is connected to the ground potential, the positive pole is connected to one end of the negative charge leakage circuit bias resistor RP, the other end of RP is another output end VBP of the bias circuit.

[0029] The positive charge leakage circuit includes: a positive charge coupling capacitor CN and a positive charge leakage NMOS tube N1. The source of the positive charge leakage NMOS tube N1 is connected to the ground potential, one end of the positive charge coupling capacitor CN is an input end of the bias voltage of the positive charge leakage circuit, the other end of the positive charge coupling capacitor CN is connected to the gate of the positive charge leakage NMOS tube N1, the source of the positive charge leakage NMOS tube N1 is connected to the power supply ground, and the drain of the positive charge leakage NMOS tube N1 and one end of the positive charge coupling capacitor CN are commonly connected to the output node of the radiation hardening circuit.

[0030] The negative charge leakage circuit includes: a negative charge coupling capacitor CP and a positive charge leakage PMOS tube P1. The source of the positive charge leakage PMOS tube P1 is connected to the power supply potential, the gate of the positive charge leakage PMOS tube P1 and one end of the negative charge coupling capacitor CP are commonly connected to the VBP end of the bias circuit, and the drain of the positive charge leakage PMOS tube P1 and the other end of the negative charge coupling capacitor CP are commonly connected to the output end OUT of the radiation hardening circuit.

[0031] The principle of the radiation hardening circuit for quickly leaking radiation charges according to the embodiment is as follows:

[0032] The positive charge leakage circuit bias voltage source VSN provides suitable DC bias voltage for the positive charge leakage circuit, so that the positive charge leakage tube N1 in the positive charge leakage circuit is in a state easily triggered by positive voltage pulse, and the static leakage current in the non-trigger state is small; the positive charge leakage circuit bias resistor RN can isolate VSN from the positive charge leakage circuit, so that the positive charge leakage circuit can better couple the positive voltage pulse generated by the radiation particle; the negative charge leakage circuit bias voltage source VSP provides suitable DC bias voltage for the negative charge leakage circuit, so that the negative charge leakage tube P1 in the negative charge leakage circuit is in a state easily triggered by negative voltage pulse, and the static leakage current in the non-trigger state is small; the negative charge leakage circuit bias resistor RP can isolate VSP from the negative charge leakage circuit, so that the negative charge leakage circuit can better couple the negative voltage pulse generated by the radiation particle. In the actual circuit, the bias circuit can be realized by any suitable voltage generating circuit.

[0033] When the positive charge pulse generated by the radiation particle causes the circuit node, i.e. the OUT node, to appear a positive voltage pulse, the positive charge leakage circuit causes the gate of the positive charge leakage tube N1 to also appear a positive voltage pulse through the internal coupling capacitor CN, and during the generation of the pulse, the positive charge leakage tube N1 is turned on, while the negative charge leakage tube P1 in the negative charge leakage circuit is turned off, so that the positive charge radiated to the OUT node can be quickly discharged; when the negative charge pulse generated by the radiation particle causes the OUT node to appear a negative voltage pulse, the negative charge leakage circuit causes the gate of the negative charge leakage tube P1 to also appear a negative voltage pulse through the internal coupling capacitor CP, and during the generation of the pulse, the negative charge leakage tube P1 is turned on, while the positive charge leakage tube N1 in the positive charge leakage circuit is turned off, so that the negative charge radiated to the OUT node can be quickly discharged.

[0034] When the circuit is not incident to the radiation particle, the positive charge leakage tube N1 in the positive charge leakage circuit is in a cut-off state due to the bias voltage VBN generated by the bias circuit, so only a small leakage current exists, which can be considered as a high resistance state, so that no large power consumption is generated, and at the same time, since the coupling capacitor CN is also small, the influence on the hardened circuit node is also small; the negative charge leakage tube P1 in the negative charge leakage circuit is in a cut-off state due to the bias voltage VBP generated by the bias circuit, so only a small leakage current exists, which can be considered as a high resistance state, so that no large power consumption is generated, and at the same time, since the coupling capacitor CP is also small, the influence on the hardened circuit node is also small. At the same time, since the bias resistor RN, the bias resistor RP, the coupling capacitor CN, the coupling capacitor CP, the positive charge leakage tube N1 and the negative charge leakage tube P1 do not need to be very large to achieve the above functions, the consumption of the area is also small.

[0035] While the application has been described with reference to particular embodiments thereof, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present application. It will be apparent to those skilled in the art that numerous modifications can be made within the scope of the present application as defined by the appended claims. It is intended that all such modification fall within the spirit and scope of the present application. It will be understood that the features described in connection with one embodiment can be used in connection with another embodiment.

Claims

1. A radiation-hardened circuit for fast discharge of a radiation charge, characterized by, The voltage generating circuit is a biasing circuit, and the charge leakage circuit comprises positive and negative charge leakage circuits. The biasing circuit comprises a biasing voltage source VSP, a biasing resistor RP, a biasing voltage source VSN and a biasing resistor RN. The negative poles of the biasing voltage source VSP and the biasing voltage source VSN are connected to a power supply ground. The positive pole of the biasing voltage source VSP is connected to a voltage input end of the negative charge leakage circuit, and the biasing resistor RP is connected in series between the biasing voltage source VSP and the negative charge leakage circuit. The positive pole of the biasing voltage source VSN is connected to a voltage input end of the positive charge leakage circuit, and the biasing resistor RN is connected in series between the biasing voltage source VSN and the positive charge leakage circuit. The positive charge leakage circuit comprises a coupling capacitor CN and a positive charge leakage transistor N1. One end of the coupling capacitor CN serves as a biasing voltage input end of the positive charge leakage circuit, the other end of the coupling capacitor CN is connected to a gate of the positive charge leakage transistor N1, a source of the positive charge leakage transistor N1 is connected to a power supply ground, and a drain of the positive charge leakage transistor N1 is connected to an output node of the anti-radiation reinforcement circuit. The negative charge leakage circuit comprises a coupling capacitor CP and a negative charge leakage transistor P1. One end of the coupling capacitor CP and a gate of the negative charge leakage transistor P1 serve as a biasing voltage input end of the negative charge leakage circuit, the other end of the coupling capacitor CP and a drain of the negative charge leakage transistor P1 are connected to an output node of the anti-radiation reinforcement circuit, and a source of the negative charge leakage transistor P1 is connected to a power supply end. The positive charge leakage transistor N1 is an NMOS transistor. The negative charge leakage transistor P1 is a PMOS transistor.

2. The radiation-hardened circuit for fast discharge of a radiation charge according to claim 1, characterized in that ​ 3. The radiation-hardened circuit of claim 1, wherein, ​

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