Circuit board and method for implementing irradiation annealing in orbit, and single-machine module

Abstract

The invention discloses a circuit board and method for implementing irradiation annealing on orbit and a single machine module, and the circuit board comprises an annealing circuit, and further comprises a first wiring layer; the at least one middle wiring layer is arranged on one side of the first wiring layer; the second wiring layer is arranged on one side, far away from the first wiring layer, of the at least one middle wiring layer; a to-be-annealed device is connected with the second wiring layer, the heating coil is located on the at least one middle wiring layer and / or the second wiring layer, and the orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the to-be-annealed device on the second wiring layer. The device to be annealed is heated and annealed, so that the performance of the device to be annealed is improved, and the on-orbit life of a satellite is prolonged.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of integrated circuit reliability, and in particular to a circuit board, method and stand-alone module for implementing radiation annealing on-orbit. Background Art

[0002] As the satellite's in-orbit working time increases, the internal components of the satellite will experience performance degradation and failure due to the space radiation environment. Currently, there are no effective measures to deal with this type of in-orbit performance degradation / failure, and it is usually alleviated by using radiation-resistant components and adding backup systems. The market for radiation-resistant components is small and the cost is very high. Currently, most commercial satellites cannot afford it; the use of backup systems can alleviate the problem to a certain extent, but even for a single unit that is not working in orbit, its components will still be affected by space radiation, resulting in performance degradation. At the same time, adding backup systems will inevitably increase the requirements for quality and power consumption, and increase the cost of developing the entire satellite. Summary of the invention

[0003] The present invention provides a circuit board, method and stand-alone module for implementing radiation annealing on orbit, which realizes heating annealing of a device to be annealed, thereby improving the performance of the device to be annealed, thereby extending the on-orbit life of the satellite, and does not require the addition of additional radiation-resistant components or assemblies for the design and manufacture of the circuit board, and can be applicable to various devices to be annealed that are susceptible to radiation.

[0004] In a first aspect, an embodiment of the present invention provides a circuit board for implementing radiation annealing on-track, comprising: an annealing circuit, the annealing circuit comprising a heating coil, a switch unit, a temperature sensing unit, a power supply unit, and a control unit;

[0005] The first end of the heating coil is connected to the first end of the switch unit; the second end of the switch unit is connected to the first pole of the power supply unit; the second pole of the power supply unit is connected to the second end of the heating coil; the control unit is respectively connected to the control end of the switch unit and the power supply unit; the temperature sensing unit is connected to the control unit;

[0006] The circuit board also includes:

[0007] A first wiring layer;

[0008] At least one intermediate wiring layer, disposed on one side of the first wiring layer;

[0009] A second wiring layer is arranged on a side of the at least one intermediate wiring layer away from the first wiring layer; the device to be annealed is connected to the second wiring layer, wherein the heating coil is located at the at least one intermediate wiring layer and / or the second wiring layer, and the orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the device to be annealed on the second wiring layer.

[0010] Optionally, the second wiring layer includes an annealing heating zone, and the orthographic projection of the device to be annealed on the second wiring layer is located within the orthographic projection of the annealing heating zone on the second wiring layer;

[0011] The orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the annealing heating zone on the second wiring layer.

[0012] Optionally, the heating coil is located on the middle wiring layer adjacent to the second wiring layer.

[0013] Optionally, the circuit board subjected to on-track radiation annealing further comprises a heat-conducting layer;

[0014] The heat-conducting layer is disposed on the same layer as the heating coil; and / or the heat-conducting layer is disposed on the same layer as the intermediate wiring layer between the heating coil and the second wiring layer;

[0015] The orthographic projection of the heat-conducting layer on the second wiring layer at least covers the orthographic projection of the annealing heating zone on the second wiring layer.

[0016] Optionally, when the heat conducting layer and the heating coil are arranged on the same layer,

[0017] An orthographic projection of the heat-conducting layer on the second wiring layer does not overlap with an orthographic projection of the heating coil on the second wiring layer.

[0018] Optionally, the second wiring layer further includes a segmentation area, and the segmentation area is located on a side adjacent to the annealing heating area;

[0019] An overlapping area of ​​an orthographic projection of the heat conducting layer on the second wiring layer and an orthographic projection of the dividing area on the second wiring layer is smaller than an overlapping area of ​​an orthographic projection of the heat conducting layer on the second wiring layer and an orthographic projection of the annealing heating area on the second wiring layer.

[0020] Optionally, the temperature sensing unit is connected to the second wiring layer, and the temperature sensing unit is arranged adjacent to the device to be annealed.

[0021] In a second aspect, an embodiment of the present invention provides a method for implementing radiation annealing on-orbit, which is performed by an annealing circuit, wherein the annealing circuit includes a heating coil, a switch unit, a temperature sensing unit, a power supply unit, and a control unit;

[0022] The control unit sends a first control signal to the control terminal of the switch unit to turn on the switch unit;

[0023] The control unit controls the current output by the power supply unit according to the temperature of the heating coil detected by the temperature sensing unit, so that the temperature of the heating coil is constant at the annealing temperature;

[0024] The heating coil is heated for a first preset time, and the control unit sends a second control signal to the control end of the switch unit to put the switch unit into a cut-off state.

[0025] Optionally, after the heating coil is heated for a preset time, the control unit sends a second control signal to the control end of the switch unit to put the switch unit into a cut-off state, the method further includes:

[0026] If the recovery of the device to be annealed does not meet the requirement, the control unit sends the first control signal to the control end of the switch unit again;

[0027] Before the control unit sends the first control signal to the control end of the switch unit again, the control unit also determines whether the annealing time of the heating coil heating the device to be annealed is greater than a second preset time. If it is greater than the second preset time, the annealing recovery of the device to be annealed will be stopped.

[0028] In a third aspect, an embodiment of the present invention provides a stand-alone module, including a circuit board for on-orbit radiation annealing as described in any of the embodiments of the present invention.

[0029] The circuit board for implementing radiation annealing on-orbit provided by the embodiment of the present invention, by arranging a heating coil on at least one intermediate wiring layer and / or the second wiring layer of the circuit board, the heating coil is used as a heating unit for the device to be annealed, and the orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the device to be annealed on the second wiring layer. Therefore, when the heating coil is heated and heated, heat can be conducted to the device to be annealed through space, the insulating layer and the corresponding wiring layer, so as to achieve heating annealing of the device to be annealed, thereby improving the performance of the device to be annealed, thereby extending the on-orbit life of the satellite, and no additional radiation-resistant components or assemblies are required for the design and manufacture of the circuit board, and the circuit board can be applicable to various devices to be annealed that are susceptible to radiation. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of the structure of an annealing circuit for performing radiation annealing on-orbit provided by an embodiment of the present invention;

[0031] Figure 2 A schematic diagram of the cross-sectional structure of a circuit board for on-track radiation annealing provided by an embodiment of the present invention;

[0032] Figure 3 A schematic diagram of the cross-sectional structure of another circuit board for on-track radiation annealing provided by an embodiment of the present invention;

[0033] Figure 4 A schematic diagram of the cross-sectional structure of another circuit board for on-track radiation annealing provided by an embodiment of the present invention;

[0034] Figure 5 A schematic diagram of a top view of a circuit board for on-track radiation annealing provided by an embodiment of the present invention;

[0035] Figure 6 A schematic diagram of the cross-sectional structure of another circuit board for on-track radiation annealing provided by an embodiment of the present invention;

[0036] Figure 7 A method for implementing radiation annealing on-orbit provided in an embodiment of the present invention;

[0037] Figure 8 Another method for performing radiation annealing on-orbit is provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] Figure 1 A schematic diagram of the structure of an annealing circuit for implementing radiation annealing on-orbit provided by an embodiment of the present invention, see Figure 1 The circuit board for on-track radiation annealing includes at least one annealing circuit, the annealing circuit includes a heating coil 110, a switch unit 120, a temperature sensing unit 130, a power supply unit 150 and a control unit 140;

[0040] The first end of the heating coil 110 is connected to the first end of the switch unit 120; the second end of the switch unit 120 is connected to the first pole + of the power supply unit 150; the second pole - of the power supply unit 150 is connected to the second end of the heating coil 110; the control unit 140 is respectively connected to the control end of the switch unit 120 and the power supply unit 150; the temperature sensing unit 130 is connected to the control unit 140;

[0041] Specifically, the heating coil 110 and the switch unit 120 are connected in series. When the switch unit 120 is in the on state, the heating coil 110 is connected to the power supply unit 150. The power supplied by the power supply unit 150 can heat the heating coil 110. Exemplarily, the heating coil 110 can be a resistance wire. Therefore, the heating coil 110 will generate heat after being powered on. The temperature of the location of the heating coil 110 can be adjusted by adjusting the current passing through the heating coil 110. In other words, the device to be annealed is heated to the annealing temperature by the heating coil 110, so as to restore the performance of the device to be annealed. Among them, the coil resistance, heating power and other parameters of the heating coil 110 can be selected and set according to the annealing requirements of the device to be annealed.

[0042] Exemplarily, the working process of the annealing circuit: when the device to be annealed is annealed, the control unit 140 sends a first control signal to the switch unit 120, so that the switch unit 120 is adjusted to the on state. The heating coil 110 generates heat after being powered on, and the temperature sensing unit 130 detects the temperature at the location of the heating coil 110. When the temperature sensing unit 130 detects that the heating coil 110 is heated to the annealing temperature, the control unit 140 can control the power supply unit 150 to output a constant current to keep the temperature of the heating coil 110 constant. Exemplarily, the annealing temperature can be between 70°C and 100°C, for example, the annealing temperature can be 70°C, 75°C, 80°C, 85°C, 90°C, 95°C or 100°C. The device to be annealed is annealed by the heating coil 110 for a first preset time, and the first preset time can be 1 to 7 days, for example, the first preset time can be 1 day, 3 days, 5 days or 7 days. After the device to be annealed is annealed for the first preset time, the control unit 140 sends a second control signal to the switch unit 120 to adjust the switch unit 120 to the cut-off state. After waiting for the temperature to drop, the performance recovery of the device to be annealed can be detected and evaluated. Exemplarily, a control device such as an onboard computer and a power controller can be used as the control unit 140 to control the switch unit 120, thereby reducing the number of new devices. The annealing circuit is independent of the original circuit on the circuit board, so as not to affect the original function and reliability of the circuit board.

[0043] Figure 2 A schematic diagram of a cross-sectional structure of a circuit board for on-track radiation annealing provided by an embodiment of the present invention, see Figure 2 , the circuit board also includes:

[0044] A first wiring layer 210;

[0045] At least one intermediate wiring layer 220, disposed on one side of the first wiring layer 210;

[0046] The second wiring layer 230 is arranged on a side of at least one intermediate wiring layer 220 away from the first wiring layer 210; the device to be annealed is connected to the second wiring layer 230, wherein the heating coil 110 is located at at least one intermediate wiring layer 220 and / or the second wiring layer 230, and the orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed on the second wiring layer 230.

[0047] Specifically, the circuit board can be a printed circuit board (PCB), which includes a first wiring layer 210, at least one intermediate wiring layer 220, and a second wiring layer 230, wherein an insulating layer 240 is provided between each wiring layer to achieve insulation isolation between the wiring layers. Exemplarily, the insulating layer 240 can be a fiberglass board. The first wiring layer 210, the intermediate wiring layer 220, and the second wiring layer 230 can include at least one trace 201, which is used for signal conduction of other functional circuits in the circuit board.

[0048] The device 202 to be annealed is usually mounted on a circuit board and is electrically connected to the traces 201 in the wiring layer. For example, the first wiring layer 210 can be the bottom wiring layer of the circuit board, and the second wiring layer 230 can be the top wiring layer of the circuit board, or the first wiring layer 210 is the top wiring layer of the circuit board, and the second wiring layer 230 is the bottom wiring layer of the circuit board. Depending on the design position of the device 202 to be annealed on the circuit board, it can be mounted on the first wiring layer 210 or the second wiring layer 230. In the embodiment of the present invention, the first wiring layer 210 is the bottom wiring layer of the circuit board, the second wiring layer 230 is the top wiring layer of the circuit board, and the device 202 to be annealed is mounted on the second wiring layer 230 as an example for description. Figure 2 In the embodiment, at least one intermediate wiring layer 220 includes two layers of intermediate wiring layers 220. In other embodiments, at least one intermediate wiring layer 220 may include more layers of intermediate wiring layers 220 according to the circuit design of the circuit board, which is not specifically limited here.

[0049] The heating coil 110 can be arranged on at least one intermediate wiring layer 220 and / or the second wiring layer 230, wherein the heating coil 110 has no circuit connection with the wiring 201 of the intermediate wiring layer 220 and the second wiring layer 230, so that the heating coil 110 will not affect the normal operation of the circuit board.

[0050] For example, the heating coil 110 may be disposed on any one or more layers of the intermediate wiring layer 220. Figure 2The exemplary heating coil 110 is located on the middle wiring layer 220 adjacent to the second wiring layer 230, and the orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed 202 on the second wiring layer 230, that is, in the stacking direction, the heating coil 110 at least partially overlaps with the projection of the device to be annealed 202. Therefore, when the heating coil 110 is heated and heated, heat can be conducted to the device to be annealed 202 through the insulating layer 240 and the corresponding wiring layer between the heating coil 110 and the device to be annealed 202, thereby achieving heating and annealing of the device to be annealed 202.

[0051] Figure 3 A schematic diagram of a cross-sectional structure of another circuit board for on-track radiation annealing provided by an embodiment of the present invention, see Figure 3 In some embodiments, the heating coil 110 may also be disposed on the second wiring layer 230. The heating coil 110 may be disposed around the device to be annealed 202. The heating coil 110 avoids the electrical connection lines of the device to be annealed 202 to avoid affecting the device to be annealed 202. The orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed 202 on the second wiring layer 230, that is, in the stacking direction, the heating coil 110 at least partially overlaps with the projection of the device to be annealed 202. Therefore, when the heating coil 110 is heated and heated, the heat can be conducted to the device to be annealed 202 through the insulating layer 240 and the second wiring layer 230, thereby achieving heating and annealing of the device to be annealed 202.

[0052] Figure 4 A schematic diagram of a cross-sectional structure of another circuit board for on-track radiation annealing provided by an embodiment of the present invention, see Figure 4 In some embodiments, the heating coil 110 may also be arranged on at least one intermediate wiring layer 220 and the second wiring layer 230, and the orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed 202 on the second wiring layer 230. Therefore, when the heating coil 110 is heated and heated, heat can be conducted to the device to be annealed 202 through the insulating layer 240 and the corresponding wiring layer, thereby achieving heating and annealing of the device to be annealed 202.

[0053] Based on the above embodiment, the location of the heating coil 110 can be comprehensively considered based on the annealing temperature of the device 202 to be annealed, the heating rate, and the circuit design on the circuit board. For example, when the heating rate requirement is low, the heating coil 110 can be set on the middle wiring layer 220 relatively close to the first wiring layer 210 to reduce the heating rate, and at the same time, the space occupied by the circuit traces 201 of the device 202 to be annealed on the second wiring layer 230 or other devices on the circuit board can be reduced. When the heating rate requirement is high, the heating coil 110 can be set on the middle wiring layer 220 adjacent to the second wiring layer 230. At this time, the distance between the heating coil 110 and the device 202 to be annealed in the stacking direction is small, and the heating coil 110 can be quickly conducted to the device 202 to be annealed when heating, which can also reduce the space occupied by the circuit traces 201 of the device 202 to be annealed on the second wiring layer 230 or other devices on the circuit board. When the heating coil 110 is disposed on the second wiring layer 230 , although it occupies the space of the wiring 201 , the annealing device 202 can be annealed and heated relatively directly, thereby improving the annealing and heating effect.

[0054] The circuit board for implementing radiation annealing on-orbit provided by the embodiment of the present invention, by arranging a heating coil 110 on at least one intermediate wiring layer 220 and / or the second wiring layer 230 of the circuit board, using the heating coil 110 as a heating unit for the device 202 to be annealed, and the orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device 202 to be annealed on the second wiring layer 230. Therefore, when the heating coil 110 is heated and heated, heat can be conducted to the device 202 to be annealed through space and the insulating layer 240 and the corresponding wiring layer, so as to achieve heating annealing of the device 202 to be annealed, thereby improving the performance of the device 202 to be annealed, thereby extending the on-orbit life of the satellite, and no additional radiation-resistant components or assemblies are required for the design and manufacture of the circuit board, and the circuit board can be applied to various devices 202 to be annealed that are susceptible to radiation.

[0055] Figure 5 A schematic diagram of a top view of a circuit board for on-track radiation annealing provided by an embodiment of the present invention, see Figure 5 The second wiring layer 230 includes an annealing heating zone 310, and the orthographic projection of the device 202 to be annealed on the second wiring layer 230 is located within the orthographic projection of the annealing heating zone 310 on the second wiring layer 230; the orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the annealing heating zone 310 on the second wiring layer 230.

[0056] Specifically, the second wiring layer 230 is provided with an annealing heating zone 310, which is a surface area delineated on the second wiring layer 230, wherein the orthographic projection of the device 202 to be annealed on the second wiring layer 230 is located within the orthographic projection of the annealing heating zone 310 on the second wiring layer 230, which means that the devices 202 to be annealed on the circuit board that are susceptible to radiation are concentrated in the annealing heating zone 310, and the heating coil 110 at least partially overlaps with the projection of the annealing heating zone 310 in the stacking direction, so when the heating coil 110 is heated and heated, heat can be conducted to the annealing heating zone 310 through the insulating layer 240 and the second wiring layer 230, thereby affecting the device 202 to be annealed, and realizing batch heating annealing of the devices 202 to be annealed. Optionally, the orthographic projection of the heating coil 110 on the second wiring layer 230 can all be located within the orthographic projection of the annealing heating zone 310 on the second wiring layer 230, so as to reduce the temperature impact on other areas on the circuit board.

[0057] Exemplarily, based on the annealing temperature of the device 202 to be annealed, the heating rate, and the circuit design on the circuit board, multiple devices 202 to be annealed in the annealing heating zone 310 may correspond to a group of heating coils 110, or one device 202 to be annealed may correspond to a group of heating coils 110. For different devices 202 to be annealed, their corresponding heating coils 110 may be arranged in different wiring layers, that is, they may be arbitrarily arranged on at least one intermediate wiring layer 220 and / or the second wiring layer 230.

[0058] Continue to see Figure 2 Optionally, the heating coil 110 is located on the middle wiring layer 220 adjacent to the second wiring layer 230. Specifically, the heating coil 110 is located on the middle wiring layer 220 adjacent to the second wiring layer 230. At this time, the distance between the heating coil 110 and the device to be annealed 202 in the stacking direction is small. When the heating coil 110 is heated, it can be quickly conducted to the device to be annealed 202. By relying on the difference in thermal conductivity between the insulating layer 240 and the wiring layer in the circuit board, the impact of the heating coil 110 on the devices in other areas when heated can be reduced, and the space occupied by the circuit traces 201 of the device to be annealed 202 on the second wiring layer 230 or other devices on the circuit board can be reduced. Exemplarily, the connection end of the heating coil 110 can be led out through a through hole, and the through hole passes through the insulating layer 240 adjacent to the second wiring layer 230 to achieve the connection between the heating coil 110 and the switch unit 120. The switch unit 120 and the heating coil 110 may be arranged on a circuit board, or may be arranged on other circuit boards, and the switch unit 120 and the heating coil 110 may be connected by a wiring harness.

[0059] Figure 6 A schematic diagram of a cross-sectional structure of another circuit board for on-track radiation annealing provided by an embodiment of the present invention, see Figure 6 The circuit board subjected to radiation annealing on the track further includes a heat-conducting layer 410; the heat-conducting layer 410 is used to improve the thermal conductivity of the circuit board, wherein the heat-conducting layer 410 can be made of copper material. The heat-conducting layer 410 can be arranged on the same layer as the heating coil 110, for example, arranged on the second wiring layer 230 or the middle wiring layer 220. Figure 6 The heat conductive layer 410 and the heating coil 110 are arranged in the same layer in the middle wiring layer 410 adjacent to the second wiring layer 230. Optionally, when the heat conductive layer 410 and the heating coil 110 are arranged in the same layer, the orthographic projection of the heat conductive layer 410 on the second wiring layer 230 does not overlap with the orthographic projection of the heating coil 110 on the second wiring layer 230, that is, the heat conductive layer 410 can be laid between the gaps between the heating coils 110, thereby improving the thermal conductivity of the insulating layer 240 adjacent to the heating coil 110 and improving the heating uniformity in the annealing heating zone 310. Among them, the orthographic projection of the heat conductive layer 410 on the second wiring layer 230 at least covers the orthographic projection of the annealing heating zone 310 on the second wiring layer 230, so the heat conductive layer 410 can improve the thermal conductivity of the corresponding position of the annealing heating zone 310 without affecting other wiring areas on the circuit board, thereby reducing the impact on the performance of the circuit board.

[0060] In some other embodiments, the heat-conducting layer 410 can also be arranged in the same layer as the intermediate wiring layer 220 between the heating coil 110 and the second wiring layer 230, that is, the heat-conducting layer 410 and the heating coil 110 are arranged in different layers. In this case, the heat-conducting layer 410 can be arranged on the intermediate wiring layer 220 between the heating coil 110 and the second wiring layer 230, that is, on the intermediate wiring layer 220 between the heating coil 110 and the device to be annealed 202. At this time, the orthographic projection of the heat-conducting layer 410 on the second wiring layer 230 overlaps with the orthographic projection of the heating coil 110 on the second wiring layer 230. The heat-conducting layer 410 can be used to increase the heat-conducting area and improve the thermal conductivity of the circuit board. Similarly, the orthographic projection of the heat-conducting layer 410 on the second wiring layer 230 at least covers the orthographic projection of the annealing heating zone 310 on the second wiring layer 230. Therefore, the heat-conducting layer 410 can improve the thermal conductivity of the corresponding position of the annealing heating zone 310, and improve the heating uniformity in the annealing heating zone 310, and reduce the performance impact on other wiring areas on the circuit board. It should be noted that there is no circuit connection between the heat conducting layer 410 and the trace 201 , so as to prevent the heat conducting layer 410 from affecting the signal conduction of the trace 201 .

[0061] Continue to see Figure 5The second wiring layer 230 further includes a partitioning area 320, which is a surface area delineated on the second wiring layer 230. The partitioning area 320 is located on an adjacent side of the annealing heating area 310, and is used to partition the annealing heating area 310 and other device areas on the circuit board. In order to reduce the influence of the heating coil 110 heating on other device areas of the circuit board, the overlapping area of ​​the orthographic projection of the heat-conducting layer 410 on the second wiring layer 230 and the orthographic projection of the partitioning area 320 on the second wiring layer 230 needs to be as small as possible, that is, by reducing the overlapping area of ​​the projection of the heat-conducting layer 410 and the partitioning area 320, the thermal conductivity of the partitioning area 320 is reduced to reduce the temperature influence on other device areas. Therefore, by limiting the overlapping area between the orthographic projection of the heat-conducting layer 410 on the second wiring layer 230 and the orthographic projection of the partition area 320 on the second wiring layer 230 to be smaller than the overlapping area between the orthographic projection of the heat-conducting layer 410 on the second wiring layer 230 and the orthographic projection of the annealing heating zone 310 on the second wiring layer 230, the overlapping area of ​​the projection of the heat-conducting layer 410 and the partition area 320 is reduced as much as possible, thereby reducing the thermal conductivity of the partition area 320 and reducing the temperature impact on other device areas.

[0062] Continue to see Figure 5 Optionally, the temperature sensing unit 130 is connected to the second wiring layer 230 , and the temperature sensing unit 130 is disposed adjacent to the device to be annealed 202 .

[0063] Specifically, the temperature sensing unit 130 is connected to the wiring 201 circuit of the second wiring layer 230. The temperature sensing unit 130 can be set on a side adjacent to the device to be annealed 202. The temperature sensing unit 130 is used to detect the corresponding position of the device to be annealed 202 and the real-time temperature in the annealing heating zone 310. Therefore, the temperature sensing unit 130 can be used to monitor the heating temperature of the device to be annealed 202 during the annealing process, and then the control unit 140 is used to control the heating current and heating power in real time, thereby improving the accuracy of the annealing heating of the device to be annealed 202. Exemplarily, the temperature sensing unit 130 can use a conventional chip-type temperature sensor, whose operating temperature (-40°C to +125°C) can cover the temperature required for annealing the device to be annealed 202. The chip-type temperature sensor is small in size and will not affect the original design, production and functional performance of the stand-alone module.

[0064] The embodiment of the present invention also provides a stand-alone module, which is a functional modular component of a satellite or spacecraft. The stand-alone module includes a circuit board for on-orbit irradiation annealing according to any embodiment of the present invention, and the circuit board is fixed to a structural frame and assembled to form a stand-alone module, and the stand-alone module is installed inside a satellite or spacecraft. Because the stand-alone module includes the circuit board for on-orbit irradiation annealing according to any embodiment of the present invention, it has the same beneficial effects and will not be described in detail here. Among them, for a stand-alone module with a backup, both the main stand-alone module and the backup stand-alone module can include a circuit board for on-orbit irradiation annealing according to any embodiment of the present invention.

[0065] Figure 7 A method for implementing radiation annealing on-orbit is provided in an embodiment of the present invention. This embodiment can be applied to the performance recovery of devices affected by radiation in a single module of an on-orbit satellite or spacecraft. The method can be performed by an annealing circuit, which includes a heating coil 110, a switch unit 120, a temperature sensing unit 130 and a control unit 140. The method specifically includes the following steps:

[0066] S110, the control unit 140 sends a first control signal to the control terminal of the switch unit 120, so that the switch unit 120 is in a conducting state;

[0067] Specifically, after the satellite or spacecraft enters orbit, under normal conditions, the control unit 140 controls the switch unit 120 to be in the off state, and the heating coil 110 is in the non-operating state. After the satellite or spacecraft has been in orbit for a period of time, it can be determined whether annealing is required based on the telemetry parameters of the stand-alone module.

[0068] When a stand-alone module needs to be annealed, the control unit 140 corresponding to the stand-alone module can control the switch unit 120 to be in a conducting state. For example, the control unit 140 can use a control device such as an onboard computer or a power controller as the control unit 140 to control the switch unit 120, thereby reducing the number of new devices.

[0069] S120, the control unit 140 controls the current output by the power supply unit 150 according to the temperature of the heating coil 110 detected by the temperature sensing unit 130, so that the temperature of the heating coil 110 is constant at the annealing temperature;

[0070] Specifically, the heating coil 110 generates heat after being powered on, and the temperature sensing unit 130 detects the temperature at the location of the heating coil 110. When the temperature sensing unit 130 detects that the heating coil 110 is heated to the annealing temperature, the control unit 140 can control the power supply unit 150 to output a constant current to keep the temperature of the heating coil 110 constant. Exemplarily, the annealing temperature can be between 70°C and 100°C, for example, the annealing temperature can be 70°C, 75°C, 80°C, 85°C, 90°C, 95°C or 100°C. The device 202 to be annealed is annealed by the heating coil 110 for a first preset time, and exemplary, the first preset time can be 1 to 7 days, for example, the first preset time can be 1 day, 3 days, 5 days or 7 days.

[0071] S130: The heating coil 110 heats for a first preset time, and the control unit 140 sends a second control signal to the control end of the switch unit 120 to put the switch unit 120 into a cut-off state.

[0072] Specifically, after the annealing device 202 is annealed for the first preset time, the control unit 140 sends a second control signal to the switch unit 120 to adjust the switch unit 120 to the cut-off state. After waiting for the temperature to drop, the performance recovery of the annealing device 202 can be detected and evaluated.

[0073] Optionally, after the heating coil 110 heats for a preset time, the control unit 140 sends a second control signal to the control terminal of the switch unit 120 to put the switch unit 120 in a cut-off state, the method further includes:

[0074] If the recovery of the device to be annealed 202 does not meet the requirement, the control unit 140 sends the first control signal to the control terminal of the switch unit 120 again;

[0075] Specifically, while waiting for the temperature of the circuit board to drop to the operating temperature range, the performance recovery degree of the device to be annealed 202 can be detected. If the requirements are met, the annealing process is terminated. If the recovery of the device to be annealed 202 does not meet the requirements, the control unit 140 again sends the first control signal to the control end of the switch unit 120 to perform the annealing process again.

[0076] Optionally, before the control unit 140 sends the first control signal to the control end of the switch unit 120 again, the control unit 140 further determines whether the annealing time of the heating coil 110 heating the device to be annealed 202 is greater than the second preset time, and if it is greater than the second preset time, the annealing recovery of the device to be annealed 202 will be stopped. In other words, if the annealing time of the device to be annealed 202 reaches the maximum time, that is, the annealing time of the device to be annealed 202 annealed and heated multiple times is greater than the second preset time, and still cannot meet the recovery requirement of the device to be annealed 202, the annealing recovery of the device to be annealed 202 will be stopped to avoid multiple heating of the circuit board and affecting the performance of other devices.

[0077] Figure 8 Another method for implementing radiation annealing on-orbit provided by an embodiment of the present invention is shown in Figure 8 ,include:

[0078] S1. After a satellite or spacecraft has been in orbit for a period of time, it can be determined whether annealing is required based on the telemetry parameters of the stand-alone module. If the stand-alone module needs to be annealed, S2. For a stand-alone module with a backup, if the main stand-alone module needs to be annealed, the main stand-alone module can be switched to the backup stand-alone module first, and then the main stand-alone module can be powered off. For a single stand-alone module, it can be powered off when the stand-alone module is not in working state.

[0079] S3. After determining that the single-machine module is powered off, the control unit 140 sends a first control signal to the control end of the switch unit 120 to make the switch unit 120 in the on state. The heating coil 110 generates heat after being powered on, and heats the element to be annealed to the annealing temperature. The temperature sensing unit 130 detects the temperature at the location of the heating coil 110. The control unit 140 can control the power supply unit 150 to output a constant current to keep the temperature of the heating coil 110 constant.

[0080] S4, judging whether the annealing time of the device to be annealed 202 meets the first preset time, and if not, continuing to energize and generate heat.

[0081] If yes, then S5, the control unit 140 sends a second control signal to the switch unit 120, so that the switch unit 120 is adjusted to the cut-off state, waiting for the temperature of the circuit board to drop to the operating temperature range.

[0082] S6, the stand-alone module is turned on to determine the performance recovery degree of the device to be annealed 202. If the recovery requirement is met, S7, the stand-alone module operates normally, and the annealing process ends.

[0083] If the recovery of the device to be annealed 202 does not meet the requirement, S8, determining whether the annealing time for the heating coil 110 to heat the device to be annealed 202 is greater than a second preset time.

[0084] If not, the process returns to step S2 and performs the annealing heating process again.

[0085] If yes, it means that the annealing time of the multiple heating of the annealing device 202 reaches the maximum time sum, that is, the annealing time of the multiple annealing heating of the annealing device 202 is greater than the second preset time, and still cannot meet the recovery requirement of the annealing device 202, then the annealing recovery of the annealing device 202 is stopped to avoid multiple heating of the circuit board and affecting the performance of other devices. S9, single module degradation work.

[0086] The method for implementing radiation annealing on-orbit provided by the embodiment of the present invention can also be directly applied to the corresponding functional circuits. For example, two circuits with the same function are set inside a single module, and the two circuits are cold backup circuits for each other. Annealing the devices in the circuit that are not in working state can realize the performance recovery of the corresponding devices, thereby reducing or eliminating the need for additional configuration of backup single module.

[0087] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A circuit board for on-track radiation annealing, characterized in that: include: An annealing circuit, the annealing circuit comprising a heating coil, a switch unit, a temperature sensing unit, a power supply unit and a control unit; The first end of the heating coil is connected to the first end of the switch unit; the second end of the switch unit is connected to the first pole of the power supply unit; the second pole of the power supply unit is connected to the second end of the heating coil; the control unit is respectively connected to the control end of the switch unit and the power supply unit; the temperature sensing unit is connected to the control unit; The circuit board also includes: A first wiring layer; At least one intermediate wiring layer, disposed on one side of the first wiring layer; A second wiring layer is arranged on a side of the at least one intermediate wiring layer away from the first wiring layer; the device to be annealed is connected to the second wiring layer, wherein the heating coil is located at the at least one intermediate wiring layer and / or the second wiring layer, and the orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the device to be annealed on the second wiring layer.

2. The circuit board for on-track radiation annealing according to claim 1, characterized in that: The second wiring layer comprises an annealing heating zone, and the orthographic projection of the device to be annealed on the second wiring layer is located within the orthographic projection of the annealing heating zone on the second wiring layer; The orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the annealing heating zone on the second wiring layer.

3. The circuit board for on-track radiation annealing according to claim 2, characterized in that: The heating coil is located on the intermediate wiring layer adjacent to the second wiring layer.

4. The circuit board for on-track radiation annealing according to claim 2, characterized in that: Also includes a thermally conductive layer; The heat-conducting layer is disposed on the same layer as the heating coil; and / or the heat-conducting layer is disposed on the same layer as the intermediate wiring layer between the heating coil and the second wiring layer; The orthographic projection of the heat-conducting layer on the second wiring layer at least covers the orthographic projection of the annealing heating zone on the second wiring layer.

5. The circuit board for on-track radiation annealing according to claim 4, characterized in that: When the heat conducting layer and the heating coil are arranged on the same layer, An orthographic projection of the heat-conducting layer on the second wiring layer does not overlap with an orthographic projection of the heating coil on the second wiring layer.

6. The circuit board for on-track radiation annealing according to claim 4, characterized in that: The second wiring layer further includes a segmentation area, and the segmentation area is located on a side adjacent to the annealing heating area; An overlapping area of ​​an orthographic projection of the heat conducting layer on the second wiring layer and an orthographic projection of the dividing area on the second wiring layer is smaller than an overlapping area of ​​an orthographic projection of the heat conducting layer on the second wiring layer and an orthographic projection of the annealing heating area on the second wiring layer.

7. The circuit board for on-track radiation annealing according to claim 2, characterized in that: The temperature sensing unit is connected to the second wiring layer, and the temperature sensing unit is arranged adjacent to the device to be annealed.

8. A method for implementing radiation annealing on-orbit, characterized in that: The annealing circuit includes a heating coil, a switch unit, a temperature sensing unit, a power supply unit and a control unit. The control unit sends a first control signal to the control terminal of the switch unit to turn on the switch unit; The control unit controls the current output by the power supply unit according to the temperature of the heating coil detected by the temperature sensing unit, so that the temperature of the heating coil is constant at the annealing temperature; The heating coil is heated for a first preset time, and the control unit sends a second control signal to the control end of the switch unit to put the switch unit into a cut-off state.

9. The method for implementing radiation annealing on-orbit according to claim 8, characterized in that: After the heating coil is heated for a preset time, the control unit sends a second control signal to the control end of the switch unit to turn the switch unit off, and further includes: If the recovery of the device to be annealed does not meet the requirement, the control unit sends the first control signal to the control end of the switch unit again; Before the control unit sends the first control signal to the control end of the switch unit again, the control unit also determines whether the annealing time of the heating coil heating the device to be annealed is greater than a second preset time. If it is greater than the second preset time, the annealing recovery of the device to be annealed will be stopped.

10. A stand-alone module, characterized in that: A circuit board for on-track radiation annealing comprising any one of claims 1-7.

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