Polarization sensitive neuromorphic vision sensor and method of making the same

Abstract

The application belongs to the field of semiconductor optoelectronic devices, and discloses a polarization-sensitive neuromorphic vision sensor and a preparation method thereof.The polarization-sensitive neuromorphic vision sensor comprises, from bottom to top, a control gate, a bottom gate dielectric, a floating gate layer, a tunneling layer dielectric and a semiconductor channel layer, and a source electrode and a drain electrode are further arranged on the semiconductor channel layer, wherein the semiconductor channel layer is an in-plane anisotropic semiconductor channel layer.By using the in-plane anisotropic semiconductor channel layer as the semiconductor channel layer, the device as a whole can realize polarization light sensing function and achieve polarization-sensitive characteristics.The device can selectively perceive and process visual information, avoiding the calculation load and interference caused by the unnecessary information processing process of the redundant data flowing into the rear end on the image recognition task.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor optoelectronic devices, and more particularly, relates to a polarization-sensitive neuromorphic vision sensor and a preparation method thereof. BACKGROUND

[0002] With the development of artificial intelligence, image recognition technology is gradually popularized, and its importance is increasingly prominent. The current image recognition scheme is to first collect data through a vision sensor, usually requiring the electrical signal obtained after photoelectric conversion to be transmitted to an external circuit for analog-to-digital conversion, and then input into a computing module for image processing, analysis and recognition. In this process, the sensor indiscriminately collects visual information, making the subsequent recognition process need to process a large amount of redundant information; in addition, due to the separation of the sensing module and the computing module, there is inevitably a delay in the transmission process. These factors will lead to redundant learning in the recognition process, resulting in poor real-time performance and low interactivity of image recognition. Unlike traditional vision sensors, emerging neuromorphic vision sensors have sensing, storage and computing functions, and can simultaneously process, compute and store visual information when collecting it, which will greatly improve the efficiency of information processing. Therefore, the emergence of neuromorphic vision sensors will greatly promote the development of artificial vision technology. Even so, the problem of redundant information caused by indiscriminate collection of visual information still exists, which will occupy a large amount of computing resources, which is contrary to the goal of low energy consumption and high energy efficiency of image recognition technology. Therefore, it is urgent to develop a vision sensor that can selectively extract key visual information in the sensing stage to meet the growing demand for rapid processing of visual information and efficient execution of recognition tasks by artificial vision systems. SUMMARY

[0003] In view of the above defects or improvement needs of the prior art, the purpose of the present application is to provide a polarization-sensitive neuromorphic vision sensor and a preparation method thereof, wherein by using an in-plane anisotropic semiconductor channel layer as a semiconductor channel layer, the device as a whole can realize polarization light sensing function and achieve polarization-sensitive characteristics. The present application device can selectively perceive and process visual information, avoiding unnecessary information processing caused by the inflow of redundant data into the backend, which causes computational load and interference to the image recognition task.

[0004] To achieve the above-mentioned purpose, according to one aspect of the present application, a polarization-sensitive neuromorphic vision sensor is provided, which comprises, from bottom to top, a control gate, a bottom gate dielectric, a floating gate layer, a tunnel layer dielectric, a semiconductor channel layer, and a source electrode and a drain electrode are further provided on the semiconductor channel layer, wherein,

[0005] The tunnel layer dielectric covers not only the upper surface of the floating gate layer, but also the four surrounding sides of the floating gate layer;

[0006] The semiconductor channel layer is an in-plane anisotropic semiconductor channel layer, and includes one of an in-plane anisotropic two-dimensional layered semiconductor material monocrystal, a strip patterned in-plane isotropic two-dimensional layered semiconductor material monocrystal, and a strip patterned in-plane anisotropic two-dimensional layered semiconductor material monocrystal; the strip pattern is an equidistantly distributed and equal-width strip pattern.

[0007] As a further preferred embodiment of the present application, for the in-plane anisotropic two-dimensional layered semiconductor material monocrystal and the strip patterned in-plane anisotropic two-dimensional layered semiconductor material monocrystal, the semiconductor material used is one of rhenium disulfide (ReS2), rhenium diselenide (ReSe2), palladium disulfide (PdS2), palladium diselenide (PdSe2), tin sulfide (SnS), tin selenide (SnSe), germanium sulfide (GeS), germanium selenide (GeSe), germanium arsenide (GeAs), germanium disulfide (GeS2), germanium diarsenide (GeAs2), black phosphorus (BP), gallium telluride (GaTe), silicon phosphide (SiP), and germanium phosphide (GeP).

[0008] As a further preferred embodiment of the present application, for the strip patterned in-plane isotropic two-dimensional layered semiconductor material monocrystal, the semiconductor material used is one of molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).

[0009] As a further preferred embodiment of the present application, the thickness of the semiconductor channel layer is 5-15 nm.

[0010] As a further preferred embodiment of the present application, in the strip pattern, the width of any one strip is 50-100 nm, and the distance between the edges of any two adjacent strips is 50-100 nm.

[0011] As a further preferred embodiment of the present application, the bottom gate dielectric is one or more of silicon dioxide (SiO2), zirconium dioxide (ZrO2), and hafnium dioxide (HfO2).

[0012] The floating gate layer is a conductor, and has a thickness of 5-15 nm.

[0013] The tunneling layer dielectric is an insulator, and has a thickness of 10-20 nm.

[0014] According to another aspect of the present application, the present application provides a preparation method of the polarization-sensitive neuromorphic vision sensor, including the following steps:

[0015] S1: using a semiconductor process to sequentially construct a bottom gate dielectric, a floating gate layer, and a tunneling layer dielectric on the control gate, to obtain a structure from bottom to top of the control gate, the bottom gate dielectric, the floating gate layer, and the tunneling layer dielectric.

[0016] S2: constructing a planar anisotropic semiconductor channel layer on the tunneling layer medium;

[0017] S3: constructing a source electrode and a drain electrode on the surface of the planar anisotropic semiconductor channel layer.

[0018] As a further preferred aspect of the present application, the planar anisotropic semiconductor channel layer is one of a planar isotropic two-dimensional layered semiconductor material monocrystal in a strip pattern and a planar anisotropic two-dimensional layered semiconductor material monocrystal in a strip pattern;

[0019] Correspondingly, step S2 is to process a planar anisotropic semiconductor channel layer on the tunneling layer medium by using electron beam exposure (EBL) and inductively coupled plasma (ICP) processes.

[0020] According to still another aspect of the present application, the present application provides an application of the above-mentioned polarization-sensitive neuromorphic vision sensor in vision sensing, the polarization-sensitive neuromorphic vision sensor being sensitive to polarization information of light and being capable of selectively collecting vision information according to the polarization state of light.

[0021] As a further preferred aspect of the present application, the polarization-sensitive neuromorphic vision sensor is capable of reacting polarization information in real time through source-drain current.

[0022] Compared with the prior art, the polarization-sensitive neuromorphic vision sensor in the present application includes a control gate, a bottom gate medium, a floating gate layer, a tunneling layer medium, a planar anisotropic semiconductor channel layer, a source electrode and a drain electrode, wherein, similar to the floating gate transistor reported in the prior art, the floating gate layer is used to realize a storage function, and the tunneling layer medium is used to realize charge tunneling and charge blocking, but different from the prior art, the present application sets the planar anisotropic semiconductor channel layer, so that the whole device can realize a polarized light sensing function and achieve polarization-sensitive characteristics. The planar anisotropic semiconductor channel layer in the present application can be a planar anisotropic two-dimensional layered semiconductor material monocrystal, a planar isotropic two-dimensional layered semiconductor material monocrystal in a strip pattern (strip patterning is to process the material into a strip shape with equal spacing and equal width by using a semiconductor process; the whole semiconductor channel layer exhibits planar anisotropy through strip patterning), or a planar anisotropic two-dimensional layered semiconductor material monocrystal in a strip pattern.

[0023] Specifically, the present application can achieve the following beneficial effects:

[0024] (1) The present application provides a polarization-sensitive neuromorphic vision sensor, which integrates sensing, storage and computing functions simultaneously, can process visual information synchronously when collecting visual information, and avoids the delay caused by visual data transmission;

[0025] (2) The device of the present application exhibits polarization sensitivity while integrating sensing, storage and computing functions, and can selectively collect and process visual information according to the polarization state of light, effectively solving the unnecessary information processing process caused by the inflow of redundant data in the prior art, which causes the computational load and interference of image recognition tasks. The present application inherits the advantages of the non-volatile, high charge storage density, and frequent erasing of the floating gate structure of the existing floating gate transistor, and has stable and reliable performance. At the same time, the device of the present application can be sensitive to polarization information, and as a neuromorphic vision sensor, the polarization state change in the photoelectric conversion process is easier to distinguish. Using the device of the present application, visual information can be selectively collected according to the polarization state of light, avoiding the computational pressure and interference caused by redundant information in the sensing stage to subsequent recognition tasks. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is a preparation method flow chart of a polarization-sensitive neuromorphic vision sensor provided by the present application.

[0027] Figure 2 is a vertical structure schematic diagram of a polarization-sensitive neuromorphic vision sensor provided by the present application.

[0028] Figure 3 is a top view of the polarization-sensitive neuromorphic vision sensor obtained by the present application embodiment 1 and embodiment 2, wherein, Figure 3 (a) in corresponds to the optical microscope image of the polarization-sensitive neuromorphic vision sensor obtained by embodiment 1, Figure 3 (b) in corresponds to the scanning electron microscope image of the polarization-sensitive neuromorphic vision sensor obtained by embodiment 2.

[0029] Figure 4 is the source-drain current-time characteristic curve of the polarization-sensitive neuromorphic vision sensor obtained by embodiment 1 with the change of the polarization angle.

[0030] Figure 5 is a comparison diagram of the conductance-polarization angle relationship curve of the polarization-sensitive neuromorphic vision sensor obtained by embodiment 1 and the polarization absorption spectrum of the "graphite / h-BN / ReS2" heterostructure.

[0031] Figure 6 is a band structure schematic diagram of the polarization-sensitive neuromorphic vision sensor when a polarized light stimulus is applied.

[0032] Figure 7Source-drain current-time characteristic curves of the polarization-sensitive neuromorphic vision sensor obtained in Example 1 of the present application at initial phases of 0°, -45°, -90° and -135°.

[0033] Figure 8 Imaging results of the polarization-sensitive neuromorphic vision sensor obtained in Example 2 of the present application at initial phases of 0°, -45°, -90° and -135°.

[0034] Figure 2 The meanings of the reference numerals in the drawings are as follows: 200 is a control gate, 201 is a bottom gate dielectric, 202 is a floating gate layer, 203 is a tunneling layer dielectric, 204 is a semiconductor channel layer, and 205 and 206 are a source and a drain, respectively. DETAILED DESCRIPTION

[0035] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and examples. It should be understood that the specific examples described herein are only used to explain the present application and do not limit the present application. In addition, the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0036] In the description of the present application, it should be noted that the terms "upper", "lower", "vertical", "horizontal" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0037] In addition, many specific details of the present application are described below, such as the structure, materials, dimensions, processing and technology of the device, in order to more clearly understand the present application. However, as those skilled in the art can understand, the present application can be implemented without these specific details. Unless specifically indicated below, each part in the device can be composed of materials known to those skilled in the art, or materials with similar functions developed in the future can be used.

[0038] Example 1

[0039] As Figure 1 shown, according to one aspect of the present application, a preparation method of a polarization-sensitive neuromorphic vision sensor is provided, comprising the following steps S1-S3.

[0040] S1: using a semiconductor process to construct a control gate 200, a bottom gate dielectric 201, a floating gate layer 202 and a tunneling layer dielectric 203 in turn from bottom to top.

[0041] In the construction, the control gate 200, the bottom gate dielectric 201, the floating gate layer 202, and the tunneling layer dielectric 203 can be constructed from bottom to top by using standard semiconductor processes, such as ALD, thermal oxidation, CVD, etc.

[0042] The bottom gate dielectric 201 can be an insulating layer of SiO2, ZrO2, HfO2, or a stack of several of them as the gate dielectric; the floating gate layer 202 can be a conductor material of graphite, Au, Pt, Ni, Pd, etc.; and the tunneling layer dielectric 203 can be an insulating material of h-BN, Al2O3, ZrO2, etc.

[0043] In this embodiment, the control gate is heavily doped P-type single crystal silicon, the bottom gate dielectric is SiO2, and the graphite floating gate layer and the h-BN tunneling layer dielectric are sequentially constructed thereon.

[0044] Specifically, the graphite floating gate layer is obtained by mechanically exfoliating a bulk graphite and then transferring the obtained flake to the SiO2 bottom gate dielectric, with a flake thickness of 5 nm; and the h-BN tunneling layer dielectric is obtained by mechanically exfoliating a bulk h-BN and then transferring the obtained flake to the graphite floating gate layer, with a flake thickness of 12 nm.

[0045] S2: constructing an in-plane anisotropic semiconductor channel layer 204 on the tunneling layer dielectric to achieve polarization-sensitive characteristics.

[0046] In this embodiment, the ReS2 in-plane anisotropic semiconductor channel layer is constructed on the h-BN tunneling layer dielectric.

[0047] Specifically, the ReS2 semiconductor channel layer is obtained by mechanically exfoliating a bulk ReS2 and then transferring the obtained flake to the h-BN tunneling layer dielectric, with a flake thickness of 5 nm.

[0048] S3: constructing a source electrode 205 and a drain electrode 206 on the surface of the in-plane anisotropic semiconductor channel layer.

[0049] In this embodiment, the source electrode and the drain electrode are defined by EBL, and then formed by electron beam evaporation.

[0050] The polarization-sensitive neuromorphic vision sensor prepared by the above method has a vertical structure as shown in Figure 2 .

[0051] Embodiment 2

[0052] As shown in Figure 1As shown, according to one aspect of the present application, a preparation method of a polarization-sensitive neuromorphic vision sensor is provided, comprising the following steps S1-S3.

[0053] S1: a control gate 200, a bottom gate dielectric 201, a floating gate layer 202, and a tunneling layer dielectric 203 are sequentially constructed from bottom to top by using a semiconductor process.

[0054] In this embodiment, heavily doped P-type single crystal silicon is used as the control gate, and SiO2 is used as the bottom gate dielectric, on which a graphite floating gate layer and an h-BN tunneling layer dielectric are sequentially constructed.

[0055] Specifically, a PMMA solution (parameters: 600 rpm, 5 s; 1000 rpm, 10 s; 4000 rpm, 60 s) is spin-coated on a copper-based graphene film (size: 1 cm x 1 cm, graphene thickness: 5 nm), and then dried (parameters: 150°C, 5 min); the dried copper-based graphene film is placed in a 1 mol·L -1 FeCl3solution to etch the copper and obtain a graphene film suspended on the surface of the solution, and then a polished quartz glass sheet is used to gently drag the graphene film suspended on the surface of the solution out of the solution and into deionized water to keep it floating, and then soaked for 10 min, and then moved to clean deionized water for soaking for 10 min, and then repeated for 3 times; the graphene film suspended on the surface of the solution is transferred from the deionized water to the heavily doped P-type single crystal silicon with the SiO2 bottom gate dielectric to obtain a SiO2-based graphene film; after defining an array pattern using EBL, the SiO2-based graphene film is etched using RIE process (etching parameters: gas selected as Ar / O2, flow rate of 40 / 10 sccm, power of 50 W, 30 s) to obtain an arrayed graphite floating gate layer.

[0056] Specifically, the h-BN tunneling layer dielectric is obtained by mechanically exfoliating a bulk h-BN and then transferring the obtained sheet to the arrayed graphite floating gate layer so that the h-BN completely covers the graphite floating gate layer.

[0057] S2: a planar anisotropic semiconductor channel layer 204 is constructed on the tunneling layer dielectric to realize polarization-sensitive characteristics.

[0058] In this embodiment, a ReS2 planar anisotropic semiconductor channel layer is constructed on the h-BN tunneling layer dielectric.

[0059] Specifically, a PMMA solution (parameters in turn: 600 rpm, 5 s; 1000 rpm, 10 s; 4000 rpm, 60 s) was spin-coated on a fluorophlogopite-based ReS2 film (size: 1 cm x 1 cm, ReS2 thickness: 5 nm), and dried (parameters: 150°C, 5 min); the dried fluorophlogopite-based ReS2 film was placed in deionized water and left to stand for 24 h until the ReS2 film was suspended on the surface of the deionized water; the ReS2 film suspended on the surface of the deionized water was transferred to the h-BN tunneling layer medium; after the array pattern was defined using EBL, the ReS2 film transferred to the h-BN tunneling layer medium was etched using an inductively coupled plasma (ICP) process (etching parameters: gas selected from Ar / BCl3, flow rate of 36 / 14 sccm, power of 500 W, 20 s), to obtain an arrayed ReS2 semiconductor channel layer.

[0060] S3: constructing a source electrode 205 and a drain electrode 206 on the surface of the in-plane anisotropic semiconductor channel layer.

[0061] In this embodiment, the source electrode and the drain electrode are defined by EBL, and then formed by electron beam evaporation.

[0062] The polarization-sensitive neuromorphic vision sensor prepared by the above method has a vertical structure as shown in Figure 2 .

[0063] Figure 3 (a) and (b) in FIG. 1 are an optical microscope image of the polarization-sensitive neuromorphic vision sensor in Example 1 and a scanning electron microscope image of the polarization-sensitive neuromorphic vision sensor in Example 2, respectively, wherein the ReS2 semiconductor channel layer and the graphite floating gate layer are completely separated by the h-BN tunneling layer medium.

[0064] A read voltage of 0.5 V was applied across the source electrode and the drain electrode, and a polarized light pulse stimulus was applied to the polarization-sensitive neuromorphic vision sensor in Example 1, with a light wavelength of 532 nm, a light power of 10 mW·cm -2 , a pulse interval of 0.5 s, and a pulse width of 0.5 s, and a polarization angle defined as the included angle between the b-axis direction of the ReS2 semiconductor channel layer (i.e., the b-axis direction of the ReS2 crystal) and the polarization direction, to obtain a series of source-drain current-time characteristic curves varying with the polarization angle and gradually accumulated with the number of pulses, as shown in Figure 4 . This indicates that the polarization-sensitive neuromorphic vision sensor can make a differential response to a polarized light stimulus. Figure 4The device has obvious neuromorphic, that is, the device has neuromorphic and can realize more extensive artificial vision related applications, and can selectively extract information according to a polarization state and directly process the information when the information is perceived.

[0065] The Figure 4 maximum current is extracted, and a conductance-polarization angle relationship is drawn, as shown in the conductance-polarization angle relationship curve in Figure 5 Meanwhile, a "graphite / h-BN / ReS2" heterostructure (that is, a heterostructure composed of graphite, h-BN and ReS2 from bottom to top) is prepared, and a polarization absorption spectrum of the "graphite / h-BN / ReS2" heterostructure is measured, and an absorbance-polarization angle relationship curve is obtained, as shown in Figure 5 From Figure 5 it can be seen that the conductance-polarization angle relationship curve and the absorbance-polarization angle relationship curve have consistent trends and good matching. The test wavelength of the polarization absorption spectrum is 532 nm. The conductance changes with the polarization angle in a trend similar to the polarization absorption, and has a maximum value when the polarization direction is parallel to the b-axis of the ReS2 semiconductor channel layer and a minimum value when the polarization direction is perpendicular to the b-axis of the ReS2 semiconductor channel layer.

[0066] Further, in order to analyze the polarization-dependent photoelectric response generated by the polarization-sensitive neuromorphic vision sensor, the energy band structure thereof when light stimulation is applied is given, as shown in Figure 6 As shown in Figure 6 (a) in the drawings, when a polarized light pulse acts on the device, electron-hole pairs are formed in the ReS2 semiconductor channel layer. The photo-generated holes undergo Fowler-Nordheim tunneling under the action of the confined electrons in the graphite floating gate layer, enter the graphite floating gate layer, and neutralize the negative charges therein. At this time, the modulation effect of the graphite floating gate layer on the ReS2 semiconductor channel layer is weakened. As shown in Figure 6 (b), as the polarization direction gradually deviates from the b-axis of the ReS2 semiconductor channel layer, the concentration of photo-generated holes decreases with the decrease of light absorption, and therefore the number of photo-generated holes subjected to Fowler-Nordheim tunneling decreases. In contrast, the modulation effect of the floating gate is stronger, and the photocurrent is smaller.

[0067] In order to show the ability of the polarization-sensitive neuromorphic vision sensor in embodiment 1 to selectively extract visual information according to a polarization state, source-drain current-time characteristic curves are obtained at initial phases of 0°, -45°, -90° and -135°, as shown in Figure 7The initial phase is defined as the angle between the b-axis direction of the ReS2 semiconductor channel layer and the polarization direction, and the negative sign indicates the opposite direction of rotation of the polarization; the polarization angle is defined as the angle of rotation from the initial phase. The test results show that, under different initial phases, the maximum and minimum values appear at different positions, which is the basis for the polarization-sensitive neuromorphic visual sensor to selectively extract visual information.

[0068] The polarization-sensitive neuromorphic visual sensor given in Embodiment 2 is an array, which can be directly applied to imaging, such as Figure 8 As shown in the figure. Under a certain initial phase, the letter pattern is selectively enhanced with the increase of the number of pulses; for the same number of pulses, different initial phases will lead to different letter patterns, which shows that the polarization-sensitive neuromorphic visual sensor can selectively extract visual information according to the polarization state and process it synchronously, reducing the input and interference of the back-end data.

[0069] The above embodiments are only examples, for example, the polarization angle can also be defined as the angle between other directions (such as the a-axis, c-axis, etc. of the crystal) in the plane of the in-plane anisotropic semiconductor channel layer and the polarization direction; other anisotropic semiconductor materials (such as ReSe2, PdS2, PdSe2, SnS, SnSe, GeS, GeSe, GeAs, GeS2, GeAs2, BP, GaTe, SiP, GeP) can also be used to form the in-plane anisotropic semiconductor channel layer; and for isotropic semiconductor materials (such as MoS2, MoSe2, MoTe2, WS2, WSe2), the in-plane anisotropic semiconductor channel layer can be constructed by forming a strip patterned in-plane isotropic two-dimensional layered semiconductor material monocrystal (the strip pattern is an equidistantly distributed and equal-width strip, and the width of any one strip can be, for example, 50-100 nm, and the spacing between the edges of adjacent two strips can be, for example, 50-100 nm). In addition, the thickness of the in-plane anisotropic semiconductor channel layer in the present application, as well as the materials, thicknesses, etc. of other layers, can be selected according to the floating gate transistor (for example, the floating gate layer can also be other conductor materials, and the thickness can be, for example, 5-15 nm; the tunneling layer dielectric can also be other insulator materials, and the thickness can be, for example, 10-20 nm).

[0070] Those skilled in the art will readily understand that the above description is only the preferred embodiments of the present application, and is not intended to limit the present application, and any modifications, equivalent replacements and improvements made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A polarization sensitive neuromorphic vision sensor, characterized in that, From bottom to top, it comprises a control gate (200), a bottom gate dielectric (201), a floating gate layer (202), a tunneling layer dielectric (203), a semiconductor channel layer (204), and a source electrode (205) and a drain electrode (206) are further arranged on the semiconductor channel layer (204), wherein, The tunneling layer dielectric (203) covers not only the upper surface of the floating gate layer (202), but also the four surrounding sides of the floating gate layer (202); The semiconductor channel layer (204) is a planar anisotropic semiconductor channel layer, which comprises one of a planar anisotropic two-dimensional layered semiconductor material single crystal, a strip patterned planar isotropic two-dimensional layered semiconductor material single crystal, and a strip patterned planar anisotropic two-dimensional layered semiconductor material single crystal; the strip pattern is an equidistantly distributed and equal-width strip pattern; The bottom gate dielectric (201) is one or more of silicon dioxide (SiO2), zirconium dioxide (ZrO2), and hafnium dioxide (HfO2); The floating gate layer (202) is a conductor with a thickness of 5-15 nm; The tunneling layer dielectric (203) is an insulator with a thickness of 10-20 nm.

2. The polarization sensitive neuromorphic vision sensor of claim 1, wherein, For the planar anisotropic two-dimensional layered semiconductor material single crystal and the strip patterned planar anisotropic two-dimensional layered semiconductor material single crystal, the semiconductor material used is one of rhenium disulfide (ReS2), rhenium diselenide (ReSe2), palladium disulfide (PdS2), palladium diselenide (PdSe2), tin sulfide (SnS), tin selenide (SnSe), germanium sulfide (GeS), germanium selenide (GeSe), germanium arsenide (GeAs), germanium disulfide (GeS2), germanium diarsenide (GeAs2), black phosphorus (BP), gallium telluride (GaTe), silicon phosphide (SiP), and germanium phosphide (GeP).

3. The polarization sensitive neuromorphic vision sensor of claim 1, wherein, For the strip patterned planar isotropic two-dimensional layered semiconductor material single crystal, the semiconductor material used is one of molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).

4. The polarization sensitive neuromorphic vision sensor of claim 1, wherein, The thickness of the semiconductor channel layer (204) is 5-15 nm.

5. The polarization sensitive neuromorphic vision sensor of claim 1, wherein, In the strip pattern, the width of any one strip is 50-100 nm, and the distance between the edges of adjacent two strips is 50-100 nm.

6. The method of claim 1-5, wherein the polarization sensitive neuromorphic vision sensor is prepared by, The steps include: S1: using a semiconductor process to sequentially construct a bottom gate dielectric, a floating gate layer, and a tunneling layer dielectric on the control gate, to obtain a structure from bottom to top, which is a control gate, a bottom gate dielectric, a floating gate layer, and a tunneling layer dielectric; S2: constructing a planar anisotropic semiconductor channel layer on the tunneling layer dielectric; S3: constructing a source electrode and a drain electrode on the surface of the planar anisotropic semiconductor channel layer.

7. The production method according to claim 6, wherein The planar anisotropic semiconductor channel layer is one of a strip patterned planar isotropic two-dimensional layered semiconductor material single crystal and a strip patterned planar anisotropic two-dimensional layered semiconductor material single crystal. Correspondingly, step S2 is to process and construct an in-plane anisotropic semiconductor channel layer on the tunneling layer medium by using electron beam exposure (EBL) and inductively coupled plasma (ICP) processes.

8. Use of a polarization sensitive neuromorphic vision sensor according to any of claims 1 to 5 in vision sensing, characterized in that, The polarization-sensitive neuromorphic vision sensor is sensitive to polarization information of light and can selectively collect vision information according to a polarization state of the light.

9. Use according to claim 8, wherein the compound is ###0002### The polarization-sensitive neuromorphic vision sensor can react to polarization information in real time through source-drain current.

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