An InGaN-based wide spectrum detector and its preparation method and application

Abstract

The present invention discloses an InGaN-based broadband detector and its preparation method and application. The InGaN-based broadband detector sequentially includes a back electrode layer, a Si substrate layer, a (GaN / InGaN / InN) / In2X3 core-shell structure nanorod layer, and a surface electrode layer from bottom to top; the (GaN / InGaN / InN) / In2X3 core-shell structure nanorod layer includes a GaN / InGaN / InN nanorod array and an In2X3 compound, and the In2X3 compound is wrapped on the surface of the GaN / InGaN / InN nanorods; the GaN / InGaN / InN nanorods are sequentially GaN nanorods, InGaN nanorods, and InN nanorods from bottom to top; the X element in the In2X3 compound is one or more of sulfur, selenium, and tellurium elements. The InGaN-based broadband detector of the present invention has low dark current and higher and wider spectral response.

Description

Technical Field

[0001] The invention belongs to the field of InGaN-based detectors, and in particular relates to an InGaN-based wide-spectrum detector and a preparation method and application thereof. Background Art

[0002] Wide-spectrum detectors are able to detect a wide range of electromagnetic spectrum segments, from visible light to infrared and ultraviolet light. This capability makes them useful in a variety of fields, including astronomy, earth sciences, life sciences, and materials research. For example, in astronomy, wide-spectrum detectors can observe radiation of different wavelengths from various celestial bodies in the universe, helping scientists understand the structure and evolution of the universe; in earth sciences, they can be used for remote sensing and environmental monitoring; in life sciences, they can be used to analyze the spectral characteristics of biological molecules, etc.

[0003] The size of traditional Si-based detectors continues to decrease, the density of transistors is growing exponentially, and the short channel effect of transistors limits the further improvement of their own performance. Compared with Si-based detectors, new two-dimensional detectors have the advantages of small size, easy to carry, easy to integrate, and high breakdown electric field, which promotes the further development of visible light detectors. As a new type of two-dimensional van der Waals semiconductor material, III-VI compounds have the characteristics of high carrier mobility, high thermal stability, good chemical stability, and adjustable bandgap width with the number of layers. They can achieve an adjustable bandgap width of 2-2.7 eV, which corresponds to the detection of visible light with a wavelength of 460-620 nm, such as InGaN-based detectors. However, existing InGaN-based detectors have problems such as low light absorption performance, narrow spectral response range and low detection efficiency.

[0004] Therefore, it is of great significance to develop an InGaN-based detector with wider spectral response, higher light intensity and lower dark current. Summary of the invention

[0005] In order to overcome the shortcomings and deficiencies of the prior art, an object of the present invention is to provide an InGaN-based wide spectrum detector and a preparation method and application thereof.

[0006] The present invention adopts MBE to prepare GaN / InGaN / InN nanocolumn array, combines CVD low temperature annealing self-reaction to form (GaN / InGaN / InN) / In2X3 core-shell heterojunction nanocolumn array, and can flexibly adjust the band gap of InGaN by flexibly adjusting the content of In component, and combines In2X3 material to achieve higher responsiveness and wider response range, especially in short-wave and long-wave band response. At the same time, the surface state and defects of GaN / InGaN / InN nanocolumns are reduced by CVD low temperature annealing, and the material quality of nanocolumns is improved. Chemical vapor deposition can also realize the growth preparation of large-area materials, ensure the uniformity of nanocolumns, and can control the content ratio of In2X3 by adjusting the annealing time; through chalcogen element annealing, In2X3 material completely wraps GaN / InGaN / InN nanocolumns, forming a one-dimensional nanocolumn core-shell heterostructure, and the one-dimensional nanocolumn core-shell heterostructure can cover a wider spectral response range from ultraviolet to near infrared. The heterojunction nanocolumns of the core-shell structure are not only conducive to the rapid separation of photogenerated electron-hole pairs, but also greatly improve the transmission rate of carriers, which is conducive to significantly improving the responsiveness of the detector. The energy levels of the type II band structure formed by (GaN / InGaN / InN) / In2X3 are more matched, which helps to promote the rapid separation of photogenerated carriers, reduce recombination, and ultimately reduce dark current, enhance responsiveness and detection rate, and have a wider spectral responsivity, which improves the response speed and detection performance of the device in a wide spectral range. In terms of preparation method, this two-step method of MBE combined with CVD is simple and easy to operate, and it is easy to achieve wafer-level material structure. There is no need to deposit new materials through coating equipment. The core-shell structure contact interface formed after the reaction has high quality and low defect density. In summary, the method of the present invention is simple and easy to operate.

[0007] The purpose of the present invention is achieved through the following technical solutions.

[0008] An InGaN-based wide spectrum detector, comprising, from bottom to top, a back electrode layer, a Si substrate layer, a (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer and a surface electrode layer;

[0009] The (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer includes a GaN / InGaN / InN nanocolumn array and an In2X3 compound, wherein the In2X3 compound is wrapped on the surface of the GaN / InGaN / InN nanocolumn;

[0010] The GaN / InGaN / InN nanocolumns are GaN nanocolumns, InGaN nanocolumns and InN nanocolumns from bottom to top;

[0011] The atomic content of the In component in the InGaN nanocolumn is 10% to 80%;

[0012] The X element in the In2X3 compound is one or more of sulfur (S), selenium (Se), and tellurium (Te) elements (chalcogens);

[0013] The (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer is obtained by annealing in a nitrogen atmosphere using a GaN / InGaN / InN nanocolumn array with a single substance powder of X as a precursor. The spectral response range of the detector is 300-1200nm, which is wider than that of the InGaN / In2S3 detector, and the dark current is reduced by 60%-90% compared with a simple GaN / InGaN / InN array structure detector; the responsivity of the detector is 400~800 A / W in the range of 300-1200 nm, which is 20 A / W higher than that of a simple GaN / InGaN / InN array structure detector.

[0014] The present invention adopts a chemical vapor deposition method, uses a single substance powder of X as a precursor, reacts the surface layer of the GaN / InGaN / InN nanocolumn array to form an In2X3 compound, and controls the content of In2X3 by controlling the reaction time.

[0015] The reaction process is InGaN+InN+X→GaN+In2X3+N2, wherein N2 escapes in the form of gas, and the InGaN and InN materials only react on the surface to form In2X3, and their interior does not participate in the reaction.

[0016] Preferably, the Si substrate layer is a Si wafer substrate layer;

[0017] Further preferably, the diameter of the Si wafer substrate layer is 2 inches to 6 inches, and the thickness is 300 μm to 500 μm;

[0018] Preferably, the GaN / InGaN / InN nanocolumns are arranged upright on the Si substrate layer;

[0019] Preferably, the GaN / InGaN / InN nanorods are arranged on the Si substrate layer to completely cover the Si substrate layer;

[0020] Preferably, the (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer completely covers the Si substrate layer;

[0021] Preferably, the upper layer of the (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer is a surface electrode layer; the surface electrode layer is only in contact with the In2X3 compound and not in contact with the GaN / InGaN / InN nanocolumns.

[0022] Preferably, the back electrode layer is a Ti / Al / Ni / Au metal electrode with a total thickness of 20-400 nm; the surface electrode layer is a Ti / Al / Ni / Au metal electrode with a total thickness of 20-400 nm.

[0023] Further preferably, the Ti / Al / Ni / Au metal electrode includes a first electrode layer Ti with a thickness of 6-10 nm; a second electrode layer Al with a thickness of 6-20 nm; a third electrode layer Ni with a thickness of 4-12 nm; and a fourth electrode layer Au with a thickness of 80-100 nm.

[0024] The method for preparing the above-mentioned InGaN-based wide spectrum detector comprises the following steps:

[0025] (1) GaN nanorods, InGaN nanorods, and InN nanorods are grown sequentially on a Si substrate layer by molecular beam epitaxy (MBE) to obtain a GaN / InGaN / InN nanorod array;

[0026] (2) Annealing in a nitrogen atmosphere;

[0027] (3) Using the single substance powder of X as a precursor, annealing in a nitrogen atmosphere to obtain a (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer;

[0028] (4) Preparing a back electrode layer on the back side of the Si substrate layer;

[0029] (5) A surface electrode layer is prepared on the surface of the (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer to obtain an InGaN-based wide spectrum detector.

[0030] Preferably, in step (1), the Si substrate layer is ultrasonically cleaned in sequence with acetone, isopropanol, and deionized water, and then blown dry with nitrogen;

[0031] Further preferably, the ultrasonic cleaning time of acetone, isopropanol and deionized water is 5 to 10 min respectively.

[0032] Preferably, in step (1), the rotation speed of the Si substrate layer is controlled to be 5-10 r / min, and the plasma power is 200-400 W; the GaN nanocolumns are grown: the Ga beam equivalent pressure is 1.0×10 -8 ~2.0×10 -7 Torr, nitrogen flow rate is 1~20sccm, time is 0.5h~3h; growth of InGaN nanocolumns: Ga beam equivalent pressure is 1.0×10 -8 ~2.0×10 - 7 Torr, the equivalent pressure of In beam is 1.0×10 -8~3.5×10 -7 Torr, nitrogen flow rate is 1~10 sccm, time is 0.5 hour~3 hours; growth of InN nanocolumns: In beam equivalent pressure is 1.0×10 -8 ~3.0×10 -7 Torr, nitrogen flow rate is 1~20sccm, and time is 0.5 hour~3 hours.

[0033] Preferably, the annealing temperature in step (2) is 300-400°C and the annealing time is 10-60 min;

[0034] Preferably, the nitrogen atmosphere in step (2) is a nitrogen atmosphere at standard atmospheric pressure;

[0035] Preferably, the annealing temperature in step (3) is 120-200° C. and the annealing time is 2-40 min.

[0036] Preferably, the nitrogen atmosphere in step (3) is a nitrogen atmosphere at standard atmospheric pressure;

[0037] Preferably, step (5) of preparing the surface electrode layer comprises:

[0038] Positive photoresist is spin-coated on the surface of the (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer, and the electrode deposition area is photolithographically formed; Ti / Al / Ni / Au metal electrodes are evaporated in the electrode deposition area using molecular beam evaporation coating technology, and the unphotolithographic positive photoresist is stripped off.

[0039] The above-mentioned InGaN-based wide spectrum detector is used in light detection.

[0040] The photodetector with this structure has stronger light absorption and energy absorption, better carrier separation and transmission efficiency, and wider wavelength response range.

[0041] Compared with the prior art, the present invention has the following advantages:

[0042] (1) The spectral response range of the detectors in the prior art is concentrated in the range of 460 nm-620 nm, while the spectral response range of the InGaN-based wide-spectrum detector of the present invention is 300-1200 nm, which greatly broadens the spectral response in the visible light and near-infrared range.

[0043] (2) The InGaN-based wide spectrum detector of the present invention has low dark current, higher and wider responsivity and detection rate. The dark current can be reduced by 60%-90% compared with a simple GaN / InGaN / InN array structure detector, and the responsivity can reach 400~800 A / W in the range of 300-1200nm.

[0044] (3) The present invention utilizes molecular beam epitaxy to prepare GaN / InGaN / InN nanocolumn arrays. The nanocolumns have good morphology and are evenly distributed, and can realize large-area material growth and preparation. According to the different decomposition temperatures of InGaN, InN and GaN compounds, chemical vapor deposition technology is used to react the surface InGaN and InN compounds to form In2X3 compounds. On the one hand, the formation of highly uniform core-shell nanocolumns is ensured. GaN / InGaN / InN is wrapped with In2X3 compounds, which reduces the surface state of GaN / InGaN / InN nanocolumns and limits their one-dimensional carrier transport to a smaller diameter range. The (GaN / InGaN / InN) / In2X3 heterojunction forms a type II band structure, which can promote the rapid separation of photogenerated carriers, ultimately reducing dark current and enhancing responsiveness. On the other hand, chemical vapor deposition can also realize large-area material growth and preparation, ensuring the uniformity of nanocolumns, and the content ratio of In2X3 can be controlled by adjusting the sulfurization time.

[0045] (4) The preparation method of the present invention is simple and easy to operate, and can realize the preparation of large-area wafer-level uniform materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 It is a schematic diagram of the structure of the InGaN-based wide spectrum detector of the present invention.

[0047] Figure 2 This is a SEM characterization image of the Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn array prepared in Example 1 of the present invention.

[0048] Figure 3 The dark current curves of the detectors prepared in Example 1 of the present invention and Comparative Example 1 are shown.

[0049] Figure 4 The response curves of the detectors prepared in Example 2 of the present invention and Comparative Example 1 under 300-1200 nm light illumination. DETAILED DESCRIPTION

[0050] The implementation of the present invention is further described below in conjunction with the accompanying drawings and examples, but the implementation and protection of the present invention are not limited thereto. It should be noted that if there are any details not particularly described below, they can be implemented or understood by those skilled in the art with reference to the prior art.

[0051] The present invention provides an InGaN-based wide spectrum detector, such as Figure 1As shown, from bottom to top, it includes a Ti / Al / Ni / Au back electrode layer 1, a Si substrate 2, a GaN / InGaN / InN nanorod 3, an In2X3 surface material 4 (In2X3 compound wrapped on the surface of the GaN / InGaN / InN nanorod, X is a chalcogen element) and a Ti / Al / Ni / Au surface electrode layer 5.

[0052] Example 1

[0053] This embodiment provides an InGaN-based wide spectrum detector and a method for preparing the same, comprising the following steps:

[0054] (1) The Si substrate is ultrasonically cleaned with acetone, isopropanol, and deionized water in sequence to obtain a cleaned Si substrate, which is then blown dry with nitrogen.

[0055] (2) The Si substrate dried by nitrogen was placed in a molecular beam epitaxy (MBE) device to grow GaN / InGaN / InN nanorod arrays. The rotation speed of the Si substrate was controlled to be 10 r / min. Process 1: The equivalent pressure of the Ga beam was 1.0×10 -8 Torr, nitrogen flow rate is 5 sccm, growth time is 30 minutes; Process 2: Ga beam equivalent pressure is 1.5×10 -8 Torr, the equivalent pressure of In beam is 1.5×10 -8 Torr, nitrogen flow rate is 5 sccm, and growth time is 60 minutes; Process 3: In beam equivalent pressure is 1.5×10 -7 Torr, nitrogen flow rate is 10 sccm, growth time is 120 minutes, plasma power is 200 W, and GaN / In films are prepared on Si substrates. x Ga 1-x N / InN nanorods, In x Ga 1-x The atomic content X of the In component in the N nanorods is 10%.

[0056] (3) The prepared Si-based GaN / InGaN / InN nanocolumn array was annealed at 300°C for 20 min in a standard atmospheric pressure N2 atmosphere; then, sulfur powder was used as a precursor and annealed at 200°C for 40 min to react the In element on the surface of the InGaN and InN nanocolumns to form In2S3, thus obtaining a Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn array. (From Figure 2From the SEM structure shown in the figure, In2S3 material connected to the nanopillars is formed on the surface of the nanopillars, indicating that in the actual low-temperature annealing, the In element is not always attached to the surface of the nanopillars, but will form the atomic state of In metal and diffuse, so there will also be In2S3 material on the GaN nanopillars.

[0057] (4) Ti / Al / Ni / Au metal electrodes were evaporated on the Si surface on the back side of the sample to prepare the back electrode layer. The electrode layer included a first electrode layer Ti with a thickness of 6 nm; a second electrode layer Al with a thickness of 10 nm; a third electrode layer Ni with a thickness of 4 nm; and a fourth electrode layer Au with a thickness of 80 nm.

[0058] (5) Spin-coat positive photoresist on the sample surface and photolithograph the electrode deposition area in the desired shape on the surface.

[0059] (6) Molecular beam evaporation coating technology is used to evaporate Ti / Al / Ni / Au metal electrodes in the deposition area (same as step 4), and the unexposed photoresist is stripped off to obtain a Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn wide spectrum detector.

[0060] Comparative Example 1

[0061] The preparation method of the Si / (GaN / InGaN / InN) nanocolumn detector in this comparative example is the same as that in Example 1, except that sulfur atmosphere annealing is not performed in step (3).

[0062] Performance test: The dark current of the detectors prepared in Example 1 and Comparative Example 1 was tested. The test results are as follows: Figure 3 As shown in the figure, the dark current of the GaN / InGaN / InN array structure detector without sulfur atmosphere annealing is obvious. After using sulfur powder as a precursor and annealing at 200 °C for 40 minutes to prepare Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn array, the dark current of the device is reduced by about 90% at a voltage of 4V.

[0063] Example 2

[0064] This embodiment provides an InGaN-based wide spectrum detector and a method for preparing the same, comprising the following steps:

[0065] (1) The Si substrate is ultrasonically cleaned with acetone, isopropanol, and deionized water in sequence to obtain a cleaned Si substrate, which is then blown dry with nitrogen.

[0066] (2) The Si substrate dried by nitrogen was placed in a molecular beam epitaxy (MBE) device to grow GaN / InGaN / InN nanorod arrays. The rotation speed of the Si substrate was controlled to be 10 r / min. Process 1: The equivalent pressure of the Ga beam was 1.0×10 -8 Torr, nitrogen flow rate is 5 sccm, growth time is 30 minutes; Process 2: Ga beam equivalent pressure is 1.5×10 -8 Torr, the equivalent pressure of In beam is 1.0×10 -7 Torr, nitrogen flow rate is 10 sccm, and growth time is 60 minutes; Process 3: In beam equivalent pressure is 2.0×10 -7 Torr, nitrogen flow rate is 15 sccm, growth time is 120 minutes, plasma power is 400 W, and GaN / In is prepared on Si substrate x Ga 1-x N / InN nanorods, In x Ga 1-x The atomic content of In component in N nanorods is 20%.

[0067] (3) The prepared Si-based GaN / InGaN / InN nanocolumn array was annealed at 400 °C for 30 min in a N2 atmosphere at standard atmospheric pressure. It was then annealed at 200 °C for 8 min using sulfur powder as a precursor to react the In element on the surface of the InGaN and InN nanocolumns to form In2S3, thereby obtaining a Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn array.

[0068] (4) Ti / Al / Ni / Au metal electrodes were evaporated on the Si surface on the back side of the sample to prepare the back electrode layer. The electrode layer included a first electrode layer Ti with a thickness of 10 nm; a second electrode layer Al with a thickness of 8 nm; a third electrode layer Ni with a thickness of 12 nm; and an Au electrode with a thickness of 80 nm.

[0069] (5) Spin-coat positive photoresist on the sample surface and photolithograph the electrode deposition area in the desired shape on the surface.

[0070] (6) Molecular beam evaporation coating technology is used to evaporate Ti / Al / Ni / Au metal electrodes in the deposition area (same as step 4), and the unexposed photoresist is stripped off to obtain a Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn wide spectrum detector.

[0071] Depend on Figure 4It can be seen that the core-shell structured nanocolumn device after annealing for 8 minutes maintains a high responsiveness (>400 A / W) in the range of 300~1200 nanometers under illumination, and is significantly higher than the unannealed GaN / InGaN / InN nanocolumn device in comparative example 1 in the range of 400~1200 nanometers.

[0072] Comparative Example 2

[0073] The preparation method of the InGaN / In2S3 nanocolumn detector in this comparative example is the same as that in Example 2, except that in step (2), the Si substrate after being dried by nitrogen is placed in a molecular beam epitaxy device (MBE) to grow only the InGaN nanocolumn array, and the growth parameters are the same as those in process 2.

[0074] The responsivity range of the detector prepared in Comparative Example 2 is concentrated in the range of 460 nm-620 nm, while the spectral response range of the wide-spectrum detector prepared in Example 2 is 300-1200 nm, which greatly broadens the spectral response in the near-infrared range.

[0075] Example 3

[0076] This embodiment provides an InGaN-based wide spectrum detector and a method for preparing the same, comprising the following steps:

[0077] (1) The Si substrate is ultrasonically cleaned with acetone, isopropanol, and deionized water in sequence to obtain a cleaned Si substrate, which is then blown dry with nitrogen.

[0078] (2) The Si substrate dried with nitrogen was placed in a molecular beam epitaxy (MBE) device to grow GaN / InGaN / InN nanorod arrays. The rotation speed of the Si substrate was controlled to be 10 r / min. Process 1: The equivalent pressure of the Ga beam was 2.0×10 -7 Torr, nitrogen flow rate is 10 sccm, growth time is 30 minutes; Process 2: Ga beam equivalent pressure is 1.0×10 -8 Torr, the equivalent pressure of In beam is 3.0×10 -7 Torr, nitrogen flow rate is 10 sccm, and growth time is 60 minutes; Process 3: In beam equivalent pressure is 1.5×10 -7 Torr, nitrogen flow rate is 15 sccm, growth time is 120 minutes, plasma power is 400 W, and GaN / In is prepared on Si substrate x Ga 1-x N / InN nanorods, In x Ga 1-x The atomic content of In component in N nanorods is 80%.

[0079] (3) The prepared Si-based GaN / InGaN / InN nanocolumn array was annealed at 300 °C for 30 min in a N2 atmosphere at standard atmospheric pressure. It was then annealed at 200 °C for 40 min using sulfur powder as a precursor to react the In element on the surface of the InGaN and InN nanocolumns to form In2S3, thereby obtaining a Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn array.

[0080] (4) Ti / Al / Ni / Au electrodes were evaporated on the Si surface on the back side of the sample to prepare the back electrode layer. The electrode layer included a first electrode layer Ti with a thickness of 10 nm; a second electrode layer Al with a thickness of 20 nm; a third electrode layer Ni with a thickness of 10 nm; and an Au electrode with a thickness of 100 nm.

[0081] (5) Spin-coat positive photoresist on the sample surface and photolithograph the electrode deposition area in the desired shape on the surface.

[0082] (6) Molecular beam evaporation coating technology is used to evaporate Ti / Al / Ni / Au metal electrodes in the deposition area (same as step 4), and the unexposed photoresist is stripped off to obtain a Si / (GaN / InGaN / InN) / In2S3 core-shell nanocolumn wide spectrum detector.

[0083] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principle of the present invention shall be equivalent replacement modes and shall be included in the protection scope of the present invention.

Claims

1. An InGaN-based wide spectrum detector, characterized in that: From bottom to top, it includes a back electrode layer, a Si substrate layer, a (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer and a surface electrode layer. The spectral response range of the detector is 300 nanometers to 1200 nanometers. The (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer includes a GaN / InGaN / InN nanocolumn array and an In2X3 compound, wherein the In2X3 compound is wrapped on the surface of the GaN / InGaN / InN nanocolumn; The GaN / InGaN / InN nanocolumns are GaN nanocolumns, InGaN nanocolumns and InN nanocolumns from bottom to top, and are obtained by sequentially growing GaN nanocolumns, InGaN nanocolumns and InN nanocolumns on a Si substrate layer by molecular beam epitaxy. The GaN / InGaN / InN nanorods are arranged vertically on the Si substrate layer; The (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer completely covers the Si substrate layer; The surface electrode layer is in contact with the In2X3 compound only, and not in contact with the GaN / InGaN / InN nanocolumns; The atomic content of the In component in the InGaN nanocolumn is 10% to 80%; The X element in the In2X3 compound is one or more of sulfur, selenium, and tellurium; The (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer is obtained by annealing a GaN / InGaN / InN nanocolumn array using a single substance powder of X as a precursor in a nitrogen atmosphere.

2. The InGaN-based wide spectrum detector according to claim 1, characterized in that: The Si substrate layer is a Si wafer substrate layer; the diameter of the Si wafer substrate layer is 2 inches to 6 inches, and the thickness is 300 μm to 500 μm.

3. The InGaN-based wide spectrum detector according to claim 1, characterized in that: The back electrode layer is a Ti / Al / Ni / Au metal electrode with a total thickness of 20-400 nm; the surface electrode layer is a Ti / Al / Ni / Au metal electrode with a total thickness of 20-400 nm.

4. The InGaN-based wide spectrum detector according to claim 3, characterized in that: The Ti / Al / Ni / Au metal electrode comprises a first electrode layer Ti with a thickness of 6-10 nm; a second electrode layer Al with a thickness of 6-20 nm; a third electrode layer Ni with a thickness of 4-12 nm; and a fourth electrode layer Au with a thickness of 80-100 nm.

5. The method for preparing the InGaN-based wide spectrum detector according to any one of claims 1 to 4, characterized in that: The following steps are involved: (1) GaN nanocolumns, InGaN nanocolumns, and InN nanocolumns are grown sequentially on a Si substrate layer by molecular beam epitaxy to obtain a GaN / InGaN / InN nanocolumn array; (2) Annealing in a nitrogen atmosphere; (3) Using the single substance powder of X as a precursor, annealing in a nitrogen atmosphere to obtain a (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer; (4) Preparing a back electrode layer on the back side of the Si substrate layer; (5) A surface electrode layer is prepared on the surface of the (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer to obtain an InGaN-based wide spectrum detector.

6. The preparation method according to claim 5, characterized in that: Step (1) The Si substrate layer is ultrasonically cleaned with acetone, isopropanol, and deionized water in sequence, and then blown dry with nitrogen; The ultrasonic cleaning time of acetone, isopropanol and deionized water was 5 to 10 min respectively.

7. The preparation method according to claim 5, characterized in that: In step (1), the rotation speed of the Si substrate layer is controlled to be 5-10 r / min, and the plasma power is 200-400 W; the GaN nanocolumns are grown: the Ga beam equivalent pressure is 1.0×10 -8 ~2.0×10 -7 Torr, nitrogen flow rate is 1~20 sccm, time is 0.5~3 hours; growth of InGaN nanocolumns: Ga beam equivalent pressure is 1.0×10 -8 ~2.0×10 -7 Torr, the equivalent pressure of In beam is 1.0×10 -8 ~3.5×10 -7 Torr, nitrogen flow rate is 1~10 sccm, time is 0.5~3 hours; growth of InN nanorods: In beam equivalent pressure is 1.0×10 -8 ~3.0×10 -7 Torr, nitrogen flow rate is 1~20 sccm, and time is 0.5~3 hours.

8. The preparation method according to claim 5, characterized in that: The annealing temperature in step (2) is 300-400°C and the annealing time is 10-60 minutes; The annealing temperature in step (3) is 120-200°C and the annealing time is 2-40 minutes.

9. The preparation method according to claim 5, characterized in that: Step (5) of preparing the surface electrode layer comprises: Positive photoresist is spin-coated on the surface of the (GaN / InGaN / InN) / In2X3 core-shell structure nanocolumn layer, and the electrode deposition area is photolithographically formed; Ti / Al / Ni / Au metal electrodes are evaporated in the electrode deposition area using molecular beam evaporation coating technology, and the unphotolithographic positive photoresist is stripped off.

10. Use of the InGaN-based wide spectrum detector according to any one of claims 1 to 4 in light detection.

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