InGaN red light LED device based on variable Al component electron barrier layer to enhance polarization effect and preparation method thereof
By controlling the Al component content and thickness of the p-type AlGaN electron barrier layer, the polarization effect is enhanced, and the problems of low luminescence efficiency and difficulty in achieving long-wavelength emission in the InGaN red LED are solved, and the long-wavelength emission and high luminescence intensity of the low In component active region are achieved.
CN119730492AActive Publication Date: 2025-03-28TSINGHUA UNIVERSITY +1
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Patent Information
- Application Number
- CN202411800089.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-09
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2044-12-09
AI Technical Summary
Technical Problem
The existing InGaN red LEDs have low luminous efficiency and are difficult to achieve long-wavelength emission, mainly due to poor quality of the active region of high In components and the decomposition of InN at high temperatures.
Method used
By controlling the Al component content and thickness in the p-type AlGaN electron barrier layer, the polarization effect is enhanced, and the long wavelength emission of the active region of the low In component is achieved.
Benefits of technology
The luminescence wavelength and luminescence intensity of InGaN red LED are improved, and the problem of poor crystal quality in the active region of high In component is avoided, and a high luminescence efficiency is achieved.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses an InGaN red light LED device based on a variable Al component electron barrier layer to enhance a polarization effect and a preparation method thereof. The InGaN red light LED device sequentially comprises a substrate, a low-temperature buffer layer, a high-temperature buffer layer, a non-doped GaN layer, an n-type doped GaN layer, a superlattice layer and / or a low-temperature GaN layer, a quantum well active region, a p-type AlGaN electron barrier layer and a p-type region from bottom to top, wherein the atomic percentage content of Al in the p-type AlGaN electron barrier layer is 22%-30%, and the thickness of the p-type AlGaN electron barrier layer is 5 nm to 15 nm. By controlling the p-type AlGaN electron barrier layer, long-wavelength emission of the low-In-component active region can be achieved, and the problems that a high-In-component active region of an existing long-wavelength InGaN red light LED is poor in crystal quality and difficult to obtain and the like are solved.
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