Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises a first electrode, one or more functional layers and a second electrode, the material of at least one functional layer comprises a nanometer material, the functional layer is combined with a modification layer, the material of the modification layer comprises an organic Lewis acid compound, and the modification layer has the following structural formula: # imgabs0 # M comprises a group IIIA element, r1, R2 and R3 are respectively selected from H, substituted or unsubstituted alkyl and substituted or unsubstituted hetero-alkyl, and the number of main chain carbon atoms of at least one of R1, R2 and R3 is 15-30. The organic Lewis acid compound has the characteristic of electron deficiency and can passivate the defects of the nano material; the number of main chain carbon atoms of at least one of R1, R2 and R3 is 15-30, a compact hydrophobic layer can be formed on the surface of the nano material, and the influence of water and oxygen is avoided, so that the stability of a functional layer is improved, and the luminous efficiency of a photoelectric device is further improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device, a method for preparing the optoelectronic device, and a display device including the optoelectronic device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence, and have become a strong competitor to OLEDs in recent years.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the light-emitting diode and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] At present, the luminous efficiency of optoelectronic devices is relatively low and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a photoelectric device, aiming to improve the problem of low luminous efficiency of existing photoelectric devices.

[0006] The embodiment of the present application is implemented as follows: an optoelectronic device includes a first electrode, one or more functional layers, and a second electrode that are stacked; wherein the material of at least one of the functional layers includes a nanomaterial, and a modification layer is combined on the functional layer containing the nanomaterial, and the material of the modification layer includes an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I):

[0007]

[0008] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from H, a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0009] Optionally, in some embodiments of the present application, the functional layer includes a light-emitting layer, the modified layer includes a first modified layer, the first modified layer is arranged between the light-emitting layer and the second electrode, and the material of the light-emitting layer includes a first nanomaterial; and / or

[0010] The functional layer comprises a first carrier functional layer and a light-emitting layer sequentially stacked on the first electrode, the modified layer comprises a second modified layer, the second modified layer is arranged between the first carrier functional layer and the light-emitting layer, and the material of the first carrier functional layer comprises a second nanomaterial; and / or

[0011] The functional layer comprises a light-emitting layer and a second carrier functional layer which are sequentially stacked on the first electrode, the modified layer comprises a third modified layer, the third modified layer is arranged between the second carrier functional layer and the second electrode, and the material of the second carrier functional layer comprises a third nanomaterial;

[0012] The materials of the first modified layer, the second modified layer and the third modified layer independently include one or more of the structural formulas shown in formula (I):

[0013]

[0014] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from hydroxyl, substituted or unsubstituted hydrocarbon group, substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0015] Optionally, in some embodiments of the present application, the M is selected from one of B and Al; and / or

[0016] The substituted or unsubstituted hydrocarbon group includes a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group; and / or

[0017] The substituted or unsubstituted heteroalkyl group includes substituted or unsubstituted heteroalkyl, substituted or unsubstituted heteroalkenyl, substituted or unsubstituted heteroalkynyl; and / or

[0018] The substituents in the substituted hydrocarbon group and the substituents in the substituted heterohydrocarbon group independently include basic groups, and the basic groups include one or more of amino groups, nitro groups, and halogen atoms; and / or

[0019] The heteroatoms in the heteroalkyl group include one or more of nitrogen, oxygen and sulfur; and / or

[0020] The main chain carbon number of at least one of R1, R2 and R3 is 22-25.

[0021] Optionally, in some embodiments of the present application, the hydrocarbon group includes one of hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, heneicosyl, heptadecenyl, octadecenyl, nonadecenyl, eicosyl, hexaynyl, heptadecenyl, octaynyl, nonadecenyl, eicosyl; and / or

[0022] The heteroalkyl group includes one of methoxyethyl, ethoxypropyl, propoxyethyl, 3,6-dioxaheptyl, n-octadecylthio, n-dodecylthio, n-butylethylthio, di(N-propyl)diazenyl, and di(2-methylpropyl)diazenyl.

[0023] Optionally, in some embodiments of the present application, the materials of the first modification layer, the second modification layer and the third modification layer independently include one or more of tri-n-hexadecyl borate, triethyl borate amine stearate, aluminum monostearate, aluminum distearate, and aluminum stearate.

[0024] Optionally, in some embodiments of the present application, the average particle size of the first nanomaterial is 3nm to 7nm; and / or

[0025] The first nanomaterial includes quantum dots and first ligands connected to the surface of the quantum dots; and / or

[0026] The average particle sizes of the second nanomaterial and the third nanomaterial are 7nm to 16nm respectively; and / or

[0027] The second nanomaterial includes a first carrier functional material and a second ligand connected to the surface of the first carrier functional material; and / or

[0028] The third nanomaterial includes a second carrier functional material and a third ligand connected to the surface of the second carrier functional material; and / or

[0029] The thicknesses of the first modified layer, the second modified layer and the third modified layer are 5 nm to 10 nm respectively.

[0030] Optionally, in some embodiments of the present application, the main chain carbon number of the first ligand is 2 to 13; and / or

[0031] The first ligand, the second ligand and the third ligand independently include Lewis bases, the Lewis bases include one or more of thiol ligands, phosphate ligands and amine ligands, the thiol ligands include one or more of mercaptopropionic acid and thioglycolic acid, the phosphate ligands include one or more of triethyl phosphate and trioctylphosphine, and the amine ligands include one or more of glycine and alanine; and / or

[0032] The first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer, or the second carrier functional layer is a hole functional layer, and the first carrier functional layer is an electron functional layer; and / or

[0033] The first carrier functional material includes a hole functional material, and the second carrier functional material includes an electron functional material, or the second carrier functional material includes a hole functional material, and the first carrier functional material includes an electron functional material.

[0034] Optionally, in some embodiments of the present application, the quantum dots include one or more of single-structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials, and the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots and the shell materials of the core-shell structure quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, the II-VI group compounds include one or more of ZnO, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, and ZnSTe, the IV-VI group compounds include one or more of SnS, SnSe, SnTe, SnSeS, SnSeTe, and SnSTe, the III-V group compounds include GaN, GaP, GaAs, GaSb, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaN P, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMY3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, Y is a halogen anion, including Cl - Br - ,I - One or more of; and / or

[0035] The electronic functional material comprises one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5, the metal oxide in the first doped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5 and Al2O3, the doping element in the first doped metal oxide particle comprises one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In and Ga, the IIB-VIA semiconductor material comprises one or more of ZnS, ZnSe and CdS, the IIIA-VA semiconductor material comprises one or more of InP and GaP, the IB-IIIA-VIA semiconductor material comprises one or more of CuInS and CuGaS; and / or

[0036] The hole functional material includes one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or

[0037] The first electrode and the second electrode each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0038] Accordingly, an embodiment of the present application further provides a method for preparing a photoelectric device, comprising:

[0039] Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode;

[0040] Forming one or more functional layers on the first electrode, wherein the material of at least one of the functional layers comprises a nanomaterial; forming a modification layer on a side of the functional layer containing the nanomaterial away from the first electrode;

[0041] forming a second electrode on the functional layer farthest from the first electrode;

[0042] Wherein, the material of the modification layer includes an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I):

[0043]

[0044] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from hydroxyl, substituted or unsubstituted hydrocarbon group, substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0045] Optionally, in some embodiments of the present application, the functional layer includes a light-emitting layer, the material of the light-emitting layer includes a first nanomaterial; the modified layer includes a first modified layer, and the method for forming the first modified layer includes: providing a first modified material, disposing the first modified material on the light-emitting layer to form the first modified layer; and / or

[0046] The functional layer includes a first carrier functional layer, the material of the first carrier functional layer includes a second nanomaterial; the modified layer includes a second modified layer, and the method for forming the second modified layer includes: providing a second modified material, and arranging the second modified material on the first carrier functional layer to form the second modified layer; and / or

[0047] The functional layer includes a light-emitting layer and a second carrier functional layer, the second carrier functional layer is arranged on a side of the light-emitting layer away from the first electrode, and the material of the second carrier functional layer includes a third nanomaterial; the modified layer includes a third modified layer, and the method for forming the third modified layer includes: providing a third modified material, and arranging the third modified material on the second carrier functional layer to form the third modified layer;

[0048] The first modifying material, the second modifying material and the third modifying material each independently include an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I):

[0049]

[0050] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from hydroxyl, substituted or unsubstituted hydrocarbon group, substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0051] Optionally, in some embodiments of the present application, the M is selected from one of B and Al; and / or

[0052] The substituted or unsubstituted hydrocarbon group includes a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group; and / or

[0053] The substituted or unsubstituted heteroalkyl group includes substituted or unsubstituted heteroalkyl, substituted or unsubstituted heteroalkenyl, substituted or unsubstituted heteroalkynyl; and / or

[0054] The substituents in the substituted hydrocarbon group and the substituents in the substituted heterohydrocarbon group independently include basic groups, and the basic groups include one or more of amino groups, nitro groups, and halogen atoms; and / or

[0055] The heteroatoms in the heteroalkyl group include one or more of nitrogen, oxygen and sulfur; and / or

[0056] The hydrocarbon group includes one of hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, heneicoenyl, heptaenyl, octaenyl, nonadecenyl, eicosyl, hexaynyl, heptaynyl, octaynyl, nonadecinyl, eicosyl; and / or

[0057] The heteroalkyl group includes one of methoxyethyl, ethoxypropyl, propoxyethyl, 3,6-dioxaheptyl, n-octadecylthio, n-dodecylthio, n-butylethylthio, di(N-propyl)diazenyl, and di(2-methylpropyl)diazenyl; and / or

[0058] The main chain carbon number of at least one of R1, R2 and R3 is 22 to 25; and / or

[0059] The materials of the first modification layer, the second modification layer and the third modification layer independently include one or more of tri-n-hexadecyl borate, triethylamine borate stearate, aluminum monostearate, aluminum distearate and aluminum stearate.

[0060] Optionally, in some embodiments of the present application, the method for forming the first modification layer includes: mixing the first modification material and a solvent to obtain a modification material dispersion, and disposing the modification material dispersion on the light-emitting layer to form the first modification layer.

[0061] Optionally, in some embodiments of the present application, the solvent includes one or more of diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol; and / or

[0062] In the modifying material dispersion, the mass concentration of the first modifying material is 3.5 mg / mL to 5 mg / mL.

[0063] Optionally, in some embodiments of the present application, after forming the first modification layer and / or forming the second modification layer and / or forming the third modification layer, annealing is further included; the annealing temperature is 100° C. to 120° C., and the annealing time is 20 min to 30 min.

[0064] Correspondingly, an embodiment of the present application further provides a display device, comprising the above-mentioned optoelectronic device, or comprising the optoelectronic device manufactured by the above-mentioned manufacturing method.

[0065] The photoelectric device provided by the present application comprises a functional layer and a modification layer combined with the functional layer, wherein the modification layer comprises an organic Lewis acid compound having an electron-deficient characteristic and can attract electrons in a nanomaterial, thereby passivating defects in the nanomaterial and reducing its activity; and at least one of R1, R2 and R3 has a main chain carbon atom number of 15 to 30, which can form a dense hydrophobic layer on the surface of the nanomaterial to avoid the influence of water and oxygen on the nanomaterial, thereby improving the stability of the functional layer, and then improving the luminous efficiency of the photoelectric device and extending the service life of the photoelectric device. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0067] Figure 1 is a schematic diagram of the structure of the optoelectronic device provided in an embodiment of the present application;

[0068] Figure 2 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0069] Figure 3 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0070] Figure 4 It is a flow chart of the method for preparing a photoelectric device provided in an embodiment of the present application.

[0071] Reference numerals:

[0072] first electrode 10 ; first carrier functional layer 20 ; fourth carrier functional layer 201 ; light emitting layer 30 ; second carrier functional layer 40 ; third carrier functional layer 401 ; second electrode 50 ; first modified layer 60 ; second modified layer 70 ; third modified layer 80 . DETAILED DESCRIPTION

[0073] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0074] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0075] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0076] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0077] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0078] In the prior art, inorganic particles are often used as materials for the light-emitting layer or the carrier functional layer, but the inorganic particles are very easy to agglomerate, which leads to a sharp decline in the performance of the light-emitting layer or the carrier functional layer; and the inorganic particles are easily affected by water, causing fluorescence quenching in the light-emitting layer, or reducing the carrier migration performance of the carrier functional layer. The current conventional solution is to introduce a large number of short-chain organic ligand groups on the surface of the inorganic particles to enhance the stability and dispersibility of the inorganic particles. Commonly used organic ligand groups include thiol ligands, amine ligands, phosphate ligands, carboxylic acid ligands, and hydroxyl ligands, which can improve the above problems to a certain extent, but these ligands are all short-chain structures, and are all Lewis bases, with high reaction activity, and are easily affected by the surrounding environment such as water, oxygen, temperature, etc., which leads to ligand shedding, and it is difficult to effectively improve the agglomeration of inorganic particles.

[0079] The technical solution of this application is as follows:

[0080] First, see Figure 1 The embodiment of the present application provides a photoelectric device, comprising a first electrode 10, one or more functional layers and a second electrode 50 arranged in a stacked manner; wherein the material of at least one of the functional layers comprises a nanomaterial, and a modification layer is combined on the functional layer containing the nanomaterial, and the material of the modification layer comprises an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I):

[0081]

[0082] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from hydroxyl, substituted or unsubstituted hydrocarbon group, substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0083] The photoelectric device provided by the present application comprises a functional layer and a modification layer combined with the functional layer, wherein the modification layer comprises an organic Lewis acid compound having an electron-deficient characteristic and can attract electrons in a nanomaterial, thereby passivating defects in the nanomaterial and reducing its activity; and at least one of R1, R2 and R3 has a main chain carbon atom number of 15 to 30, which can form a dense hydrophobic layer on the surface of the nanomaterial to avoid the influence of water and oxygen on the nanomaterial, thereby improving the stability of the functional layer, and then improving the luminous efficiency of the photoelectric device and extending the service life of the photoelectric device.

[0084] In some embodiments, the functional layer includes a light-emitting layer 30 , the modified layer includes a first modified layer 60 , the first modified layer 60 is disposed between the light-emitting layer 30 and the second electrode 50 , and the material of the light-emitting layer 30 includes a first nanomaterial.

[0085] In some embodiments, the functional layer includes a first carrier functional layer 20 and a light-emitting layer 30 stacked in sequence on the first electrode 10, the modified layer includes a second modified layer 70, the second modified layer 70 is arranged between the first carrier functional layer 20 and the light-emitting layer 30, and the material of the first carrier functional layer 20 includes a second nanomaterial.

[0086] In some embodiments, the functional layer includes a light-emitting layer 30 and a second carrier functional layer 40 stacked in sequence on the first electrode 10, the modified layer includes a third modified layer 80, the third modified layer 80 is arranged between the second carrier functional layer 40 and the second electrode 50, and the material of the second carrier functional layer 40 includes a third nanomaterial.

[0087] In at least one embodiment, the optoelectronic device includes a first electrode 10, a first carrier functional layer 20, a second modified layer 70, a light emitting layer 30, a first modified layer 60, a second carrier functional layer 40, a third modified layer 80 and a second electrode 50 stacked in sequence.

[0088] In some embodiments, the materials of the first modification layer, the second modification layer and the third modification layer independently include one or more of the structural formulas shown in formula (I):

[0089]

[0090] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from hydroxyl, substituted or unsubstituted hydrocarbon group, substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0091] In some embodiments, the M is selected from one of B and Al.

[0092] In some embodiments, the substituted or unsubstituted hydrocarbon group includes substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl.

[0093] In some embodiments, the substituted or unsubstituted heteroalkyl includes substituted or unsubstituted heteroalkyl, substituted or unsubstituted heteroalkenyl, substituted or unsubstituted heteroalkynyl.

[0094] In some embodiments, the substituents in the substituted alkyl group and the substituents in the substituted heteroalkyl group each independently include a basic group.

[0095] Furthermore, the basic group includes one or more of an amino group, a nitro group, and a halogen atom.

[0096] In some embodiments, the heteroatom in the heteroalkyl group includes one or more of nitrogen, oxygen, and sulfur.

[0097] In some embodiments, the hydrocarbon group includes one of hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, heneicosyl, heptadecenyl, octadecenyl, nonadecenyl, eicosyl, hexaynyl, heptadecenyl, octadecyl, nonadecenyl, eicosyl, hexadecyl, heptadecenyl, octadecyl, nonadecenyl, eicosyl.

[0098] In some embodiments, the heteroalkyl group includes one of methoxyethyl, ethoxypropyl, propoxyethyl, 3,6-dioxaheptyl, n-octadecylthio, n-dodecylthio, n-butylethylthio, di(N-propyl)diazenyl, and di(2-methylpropyl)diazenyl.

[0099] In some embodiments, at least one of R1, R2 and R3 has a main chain carbon number of 18 to 28.

[0100] In some embodiments, at least one of R1, R2 and R3 has a main chain carbon number of 20-26.

[0101] In some embodiments, at least one of R1, R2 and R3 has a main chain carbon number of 22-25.

[0102] In some embodiments, the materials of the first modification layer 60, the second modification layer 70 and the third modification layer 80 independently include one or more of tri-n-hexadecyl borate, triethylamine borate stearate, aluminum monostearate, aluminum distearate and aluminum stearate.

[0103] Among them, tristearate ethyl borate amine ester is prepared by ester exchange reaction of stearic acid ethanolamide and triisopropyl borate. The specific synthesis method is: add 0.025 mol of triisopropyl borate and 0.06 mol of stearic acid ethanolamide into a three-necked flask, heat at 100°C for 3h to 4h, and continuously remove the generated isopropanol by vacuum distillation until no isopropanol is evaporated, and the reaction is completed to obtain tristearate ethyl borate amine ester.

[0104] In some embodiments, the average particle size of the first nanomaterial is 3 nm to 7 nm, for example, 4 nm, 5 nm, 6 nm, etc.

[0105] In some embodiments, the first nanomaterial includes quantum dots and first ligands attached to the surfaces of the quantum dots.

[0106] In some embodiments, the first ligand comprises a Lewis base.

[0107] In some embodiments, the number of carbon atoms in the main chain of the first ligand is 2 to 13, for example, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0108] In some embodiments, the Lewis base of the first ligand includes one or more of a thiol ligand, a phosphate ligand, and an amine ligand.

[0109] Furthermore, the thiol ligand includes one or more of mercaptopropionic acid and thioglycolic acid.

[0110] The phosphate ligand includes one or more of triethyl phosphate and trioctylphosphine.

[0111] The amine ligands include one or more of glycine and alanine.

[0112] It can be understood that the main chain carbon atoms of the first ligand are relatively small, resulting in a higher activity of the quantum dots, which makes the first nanomaterial unstable and affects the photoelectric performance of the photoelectric device. Using the modified material of this proposal, on the one hand, the first ligand is a Lewis base, which has the performance of providing electrons, and the material of the modified layer includes an organic Lewis acid compound, which has the performance of absorbing electrons. Through the combination of Lewis acid and Lewis base, the defects of the first ligand are passivated; on the other hand, the main chain carbon atoms of the first ligand are relatively small, and the main chain carbon atoms of at least one of R1, R2 and R3 are 15 to 30, which can form a dense hydrophobic layer to avoid the influence of water and oxygen and improve stability.

[0113] In some embodiments, the material of the first modification layer 60 is connected to the first nanomaterial through the electron pairing effect between the M and the first ligand.

[0114] In some embodiments, the material of the quantum dots includes one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0115] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots can be respectively selected from but not limited to one or more of the group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2.

[0116] As an example, the core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0117] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or

[0118] [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

[0119] In some embodiments, the thickness of the first modification layer 60 is 5 nm to 10 nm, for example, 6 nm, 7 nm, 8 nm, 9 nm, etc.

[0120] In some embodiments, the first carrier functional layer 20 is a hole functional layer or an electron functional layer.

[0121] Furthermore, the hole functional layer includes one or more of a hole injection layer and a hole transport layer.

[0122] The electronic functional layer includes one or more of an electron injection layer and an electron transport layer.

[0123] In some embodiments, the average particle size of the second nanomaterial is 7 nm to 16 nm, for example, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, etc.

[0124] Furthermore, when the first carrier functional layer 20 is a hole functional layer, the average particle size of the second nanomaterial is 10 nm to 16 nm, for example, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, etc.

[0125] When the first carrier functional layer 20 is an electronic functional layer, the average particle size of the second nanomaterial is 7 nm to 15 nm, for example, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, etc.

[0126] In some embodiments, the second nanomaterial includes a first carrier functional material and a second ligand connected to the surface of the first carrier functional material.

[0127] In some embodiments, the second ligand comprises a Lewis base.

[0128] In some embodiments, the number of carbon atoms in the main chain of the second ligand is 2 to 13, for example, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0129] In some embodiments, the Lewis base of the second ligand includes one or more of a thiol ligand, a phosphate ligand, and an amine ligand.

[0130] Furthermore, the thiol ligand includes one or more of mercaptopropionic acid and thioglycolic acid.

[0131] The phosphate ligand includes one or more of triethyl phosphate and trioctylphosphine.

[0132] The amine ligands include one or more of glycine and alanine.

[0133] It can be understood that the main chain carbon atoms of the second ligand are relatively small, resulting in a higher activity of the quantum dots, which makes the second nanomaterial unstable and affects the photoelectric performance of the photoelectric device. Using the modified material of this proposal, on the one hand, the first ligand is a Lewis base, which has the performance of providing electrons, and the material of the modified layer includes an organic Lewis acid compound, which has the performance of absorbing electrons. Through the combination of Lewis acid and Lewis base, the defects of the second ligand are passivated; on the other hand, the main chain carbon atoms of the second ligand are relatively small, and the main chain carbon atoms of at least one of R1, R2 and R3 are 15 to 30, which can form a dense hydrophobic layer to avoid the influence of water and oxygen and improve stability.

[0134] In some embodiments, the material of the second modification layer 70 is connected to the second nanomaterial through the electron pairing effect between the M and the second ligand.

[0135] In some embodiments, the first carrier functional material includes an electron functional material or a hole functional material.

[0136] In some embodiments, the electronic functional material includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS.

[0137] In some embodiments, the hole functional material includes one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0138] In some embodiments, the thickness of the second modification layer 70 is 5 nm to 10 nm, for example, 6 nm, 7 nm, 8 nm, 9 nm, etc.

[0139] The third modified layer 80 and the third nanomaterial may refer to the second modified layer 70 and the second nanomaterial, which will not be described in detail herein.

[0140] Wherein, the third nanomaterial includes a second carrier functional material and a third ligand connected to the surface of the second carrier functional material. The third ligand may be the second ligand, which will not be described in detail here.

[0141] It can be understood that when the first carrier functional layer 20 is a hole functional layer, the second carrier functional layer 40 is an electron functional layer. When the second carrier functional layer 40 is an electron functional layer, the first carrier functional layer 20 is a hole functional layer.

[0142] Please note that Figure 2 When the optoelectronic device includes the first modification layer 60 and / or the second modification layer 70 but does not include the third modification layer 80 , the optoelectronic device may further include a third carrier functional layer 401 , which is disposed between the light emitting layer 30 and the second electrode 50 .

[0143] The third carrier functional layer 401 is a hole functional layer or an electron functional layer.

[0144] In some embodiments, when the third carrier functional layer 401 is an electronic functional layer, the material of the electronic functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials, and IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, and the metal oxide in the first doped metal oxide particles includes ZnO, TiO 2. One or more of SnO2, ZrO2, Ta2O5, and Al2O3, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS, the IIIA-VA group semiconductor materials include one or more of InP and GaP, and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0145] In some embodiments, when the third carrier functional layer 401 is a hole functional layer, the material of the hole functional layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-diphenyl (4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazolyl-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctyl Fluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] , copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide, metal selenide and metal nitride, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

[0146] Understandable, see Figure 3 When the optoelectronic device includes the first modification layer 60 and / or the third modification layer 80 but does not include the second modification layer 70 , the optoelectronic device may further include a fourth carrier functional layer 201 , which is disposed between the first electrode 10 and the light-emitting layer 30 .

[0147] The fourth carrier functional layer 201 is a hole functional layer or an electron functional layer. The materials of the hole functional layer and the electron functional layer can refer to the third carrier functional layer 401, which will not be described in detail here.

[0148] In some embodiments, the first electrode 10 and the second electrode 50 each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. Here, “ / ” represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0149] Second, see Figure 4 The present application also provides a method for preparing a photoelectric device, comprising:

[0150] S11, providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode 10;

[0151] S12, forming one or more functional layers on the first electrode 10, wherein the material of at least one of the functional layers includes a nanomaterial; and forming a modified layer on a side of the functional layer containing the nanomaterial away from the first electrode 10;

[0152] S13, forming a second electrode 50 on the functional layer farthest from the first electrode 10;

[0153] Wherein, the material of the modification layer includes an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I):

[0154]

[0155] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from hydroxyl, substituted or unsubstituted hydrocarbon group, substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0156] It should be noted that, in some embodiments, after forming the modification layer, the second electrode 50 can be formed on the surface of the modification layer away from the first electrode 10; in other embodiments, after forming the modification layer, another functional layer can be formed on the surface of the modification layer away from the first electrode 10, and then the second electrode 50 can be formed on the surface of the other functional layer away from the first electrode 10.

[0157] In some embodiments, the functional layer includes a light-emitting layer 30, and the material of the light-emitting layer 30 includes a first nanomaterial; the modification layer includes a first modification layer 60, and the method for forming the first modification layer 60 includes: providing a first modification material, and disposing the first modification material on the light-emitting layer 30 to form the first modification layer 60.

[0158] In some embodiments, the functional layer includes a first carrier functional layer 20, and the material of the first carrier functional layer 20 includes a second nanomaterial; the modified layer includes a second modified layer 70, and the method for forming the second modified layer 70 includes: providing a second modified material, and setting the second modified material on the first carrier functional layer 20 to form a second modified layer 70.

[0159] In some embodiments, the functional layer includes a light-emitting layer and a second carrier functional layer 40, the second carrier functional layer 40 is arranged on the side of the light-emitting layer 30 away from the first electrode, and the material of the second carrier functional layer 40 includes a third nanomaterial; the modification layer includes a third modification layer 80, and the method for forming the third modification layer 80 includes: providing a third modification material, and setting the third modification material on the second carrier functional layer 40 to form the third modification layer 80.

[0160] Wherein, the first modifying material, the second modifying material and the third modifying material each independently include an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I):

[0161]

[0162] Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from hydroxyl, substituted or unsubstituted hydrocarbon group, substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

[0163] It can be understood that the method of forming the first modification layer 60 , the second modification layer 70 , and the third modification layer 80 may adopt conventional technical means in the art.

[0164] In at least one embodiment, the method for forming the first modification layer 60 is a solution method, including: mixing the first modification material and a solvent to obtain a modification material dispersion, and placing the modification material dispersion on the first electrode 10 to form the first modification layer 60 .

[0165] In some embodiments, the solvent includes one or more of diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0166] In some embodiments, in the modification material dispersion, the mass concentration of the first modification material is 3.5 mg / mL to 5 mg / mL, for example, 3.8 mg / mL, 4 mg / mL, 4.2 mg / mL, 4.5 mg / mL, 4.8 mg / mL, etc.

[0167] The method of forming the second modification layer 70 and the third modification layer 80 is similar to the method of forming the first modification layer 60 , and will not be described in detail herein.

[0168] In some embodiments, after forming the first modification layer 60 , the second modification layer 70 , and the third modification layer 80 , annealing is further included.

[0169] Furthermore, the annealing temperature is 100°C to 120°C, for example, 102°C, 105°C, 108°C, 110°C, 112°C, 115°C, 118°C, etc.

[0170] The annealing time is 20 min to 30 min, for example, 21 min, 22 min, 23 min, 24 min, 25 min, 26 min, 27 min, 28 min, 29 min, etc.

[0171] Thus, within the time range of annealing and temperature, the solvent is fully removed and the formation of the modified layer is promoted.

[0172] The first electrode 10 , the first carrier functional layer 20 , the light emitting layer 30 , the second carrier functional layer 40 , and the second electrode 50 are as described above and will not be described in detail herein.

[0173] In a third aspect, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0174] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0175] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0176] Example 1

[0177] This embodiment provides a photoelectric device, and the preparation method is as follows:

[0178] Provide ITO glass, wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye, then use deionized water, acetone, ethanol, and isopropanol for ultrasonic cleaning for 15 minutes, then blow dry with nitrogen, and irradiate with UV for 15 minutes to form an ITO anode;

[0179] PEDOT:PSS was spin-coated on the ITO anode at a speed of 3500 rpm, followed by heating at 150 °C for 30 min to form a 25 nm hole injection layer;

[0180] TFB was spin-coated on the hole injection layer at a speed of 3000 rpm, followed by heating at 150°C for 30 min to form a 27 nm hole transport layer;

[0181] The hole injection layer was spin-coated with quantum dots with CdSe as the core and ZnS as the shell, and the surface of which had mercaptopropionic acid. The spin-coating speed was 2800 rpm, and then heated at 100°C for 5 minutes to form a 12 nm light-emitting layer.

[0182] Hexadecyl borate was spin-coated on the light-emitting layer at a speed of 1500 rpm, and then heated at 100° C. for 30 min to form a first modification layer of 8 nm;

[0183] ZnO was spin-coated on the third modified layer at a spin-coating speed of 4000 rpm, and then heated at 100°C for 10 min to form a 31 nm electron transport layer;

[0184] On the electron transport layer, turn on the Ag target. The cathode is formed by evaporation at a rate of 100 nm to a thickness of 100 nm;

[0185] The photoelectric device is encapsulated by acrylic resin.

[0186] Example 2

[0187] This embodiment is basically the same as embodiment 1, except that the first modification layer is not prepared in this embodiment, the surface of ZnO has thioglycolic acid, hexadecyl borate is spin-coated on the electron transport layer at a spin coating speed of 1500 rpm, and then heated at 100°C for 30 minutes to form a second modification layer of 8 nm, and a cathode is formed on the second modification layer.

[0188] Example 3

[0189] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, the first modification layer is not prepared, and nickel oxide is spin-coated on the hole injection layer, and a surface of the nickel oxide has glycine at a speed of 3000 rpm, followed by heating at 150°C for 30 min to form a 27 nm hole transport layer, and hexadecyl borate is spin-coated on the hole transport layer at a speed of 1500 rpm, followed by heating at 100°C for 30 min to form a third modification layer of 8 nm, and a light-emitting layer is formed on the third modification layer.

[0190] Example 4

[0191] This embodiment is basically the same as embodiment 1, except that in this embodiment, hexadecyl borate is spin-coated on the electron transport layer at a spin coating speed of 1500 rpm, followed by heating at 100° C. for 30 min to form a second modified layer of 8 nm, and a cathode is formed on the second modified layer.

[0192] Example 5

[0193] This embodiment is basically the same as Embodiment 1, with the only difference being that, in this embodiment, nickel oxide is spin-coated on the hole injection layer at a speed of 3000 rpm, followed by heating at 150°C for 30 min to form a 27 nm hole transport layer, hexadecyl borate is spin-coated on the hole transport layer at a speed of 1500 rpm, followed by heating at 100°C for 30 min to form an 8 nm third modification layer, and a light-emitting layer is formed on the third modification layer.

[0194] Example 6

[0195] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, the first modification layer is not prepared, nickel oxide is spin-coated on the hole injection layer at a speed of 3000 rpm, followed by heating at 150°C for 30 min to form a 27 nm hole transport layer, hexadecyl borate is spin-coated on the hole transport layer at a speed of 1500 rpm, followed by heating at 100°C for 30 min to form an 8 nm third modification layer, a light-emitting layer and an electron transport layer are formed on the third modification layer, hexadecyl borate is spin-coated on the electron transport layer at a speed of 1500 rpm, followed by heating at 100°C for 30 min to form an 8 nm second modification layer, and a cathode is formed on the second modification layer.

[0196] Example 7

[0197] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, nickel oxide is spin-coated on the hole injection layer at a speed of 3000 rpm, followed by heating at 150°C for 30 min to form a 27 nm hole transport layer, hexadecyl borate is spin-coated on the hole transport layer at a speed of 1500 rpm, followed by heating at 100°C for 30 min to form a third modification layer of 8 nm, a light-emitting layer and an electron transport layer are formed on the third modification layer, hexadecyl borate is spin-coated on the electron transport layer at a speed of 1500 rpm, followed by heating at 100°C for 30 min to form a second modification layer of 8 nm, and a cathode is formed on the second modification layer.

[0198] Example 8

[0199] This embodiment is substantially the same as embodiment 1, except that in this embodiment, hexadecyl borate is replaced by aluminum stearate.

[0200] Example 9

[0201] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the thickness of the first modification layer is 5 nm.

[0202] Example 10

[0203] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the thickness of the first modification layer is 10 nm.

[0204] Embodiment 11

[0205] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, light emitting layer, first modification layer, hole transport layer, hole injection layer and anode.

[0206] Example 12

[0207] This embodiment is basically the same as Embodiment 2, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, second modification layer, light emitting layer, hole transport layer, hole injection layer and anode.

[0208] Example 13

[0209] This embodiment is basically the same as Embodiment 3, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, light-emitting layer, hole transport layer, third modification layer, hole injection layer and anode.

[0210] Embodiment 14

[0211] This embodiment is basically the same as Embodiment 4, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, second modification layer, light-emitting layer, first modification layer, hole transport layer, hole injection layer and anode.

[0212] Embodiment 15

[0213] This embodiment is basically the same as Embodiment 5, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, light-emitting layer, first modified layer, hole transport layer, third modified layer, hole injection layer and anode.

[0214] Example 16

[0215] This embodiment is basically the same as Embodiment 6, except that in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, second modification layer, light-emitting layer, hole transport layer, third modification layer, hole injection layer and anode.

[0216] Embodiment 17

[0217] This embodiment is basically the same as Embodiment 7, except that, in this embodiment, an inverted photoelectric device is prepared in the order of cathode, electron transport layer, second modified layer, light-emitting layer, first modified layer, hole transport layer, third modified layer, hole injection layer and anode.

[0218] Comparative Example 1

[0219] This comparative example is substantially the same as Example 1, except that no first modification layer is provided in this comparative example.

[0220] Comparative Example 2

[0221] This comparative example is substantially the same as Example 3, except that hexadecyl borate is replaced by aluminum oxide in this comparative example.

[0222] Comparative Example 3

[0223] This comparative example is substantially the same as Example 11, except that no first modification layer is provided in this comparative example.

[0224] The external quantum efficiency EQE and T95@1k nit tests were performed on the optoelectronic devices of Examples 1 to 17 and Comparative Examples 1 to 3. The test results are shown in Table 1.

[0225] Among them, the detection method of external quantum efficiency is:

[0226] The ratio of the number of electron-hole pairs injected into quantum dots to the number of emitted photons, expressed in %, is an important parameter for measuring the quality of electrophotoelectric devices and can be obtained by measuring with an EQE optical test instrument. The specific calculation formula is as follows:

[0227]

[0228] Where ηe is the light output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons that generate photons to the total number of excitons, and K R is the radiation process rate, K NR is the rate of the non-radiative process.

[0229] Test conditions: carried out at room temperature, air humidity is 30-60%.

[0230] The test method of T95@1k nit is:

[0231] The time required for the device to reduce its brightness to a certain percentage of the maximum brightness when driven by a constant current or voltage. The time it takes for the brightness to drop to 95% of the maximum brightness is defined as T95, and this life is the measured life. In order to shorten the test cycle, the device life test is usually carried out at high brightness by accelerating device aging, and the life under high brightness is obtained by fitting the extended exponential decay brightness attenuation fitting formula. For example, the life under 1000nit is calculated as T95@1000nit. The specific calculation formula is as follows:

[0232]

[0233] Among them, T95 L For lifespan at low brightness, T95 H is the measured lifetime under high brightness, L H To accelerate the device to the highest brightness, L L is 1000nit, A is the acceleration factor, and this experiment measured the lifespan of several groups of green QLED devices at rated brightness and found that the A value was 1.7.

[0234] Table 1

[0235]

[0236]

[0237] From Table 1, we can see that:

[0238] It can be seen from Examples 1 to 7 and Comparative Example 1 that the modified layer, whether it is a light-emitting layer, an electron functional layer, or a hole functional layer, or any two of the functional layers, or all three functional layers are modified at the same time, significantly improves the luminous efficiency of the optoelectronic device and prolongs the service life of the optoelectronic device compared with Comparative Example 1; in particular, the optoelectronic device of Example 7 has an luminous efficiency increased by about 4 times and a service life increased by about 3 times, and has excellent optoelectronic performance;

[0239] It can be seen from Example 3 and Comparative Example 2 that the use of aluminum stearate to modify the nickel oxide hole transport layer has a higher luminous efficiency and a longer service life than the use of aluminum oxide to modify the nickel oxide hole transport layer; in the prior art, Al(OR)3 is used as a raw material for the modification layer and is spin-coated on the luminescent transport layer, and an aluminum oxide modification layer is formed after sintering. During the high-temperature sintering process, the organic long chains in Al(OR)3 fall off, thereby failing to effectively modify the hole transport layer;

[0240] It can be seen from Examples 8 to 10 and Comparative Example 1 that hexadecyl borate or aluminum stearate as the material of the modification layer has little effect on the optoelectronic device. Within the thickness range of the modification layer provided in the present application, the performance of the optoelectronic device is improved more significantly when the thickness is moderate. The luminous efficiency and service life of the optoelectronic devices of Examples 8 to 10 are significantly improved compared with Comparative Example 1.

[0241] It can be seen from Examples 11 to 18 and Comparative Example 3 that, for inverted photoelectric devices, using a modification layer to modify the functional layer can also improve the performance of the photoelectric device. The luminous efficiency of the photoelectric devices of Examples 11 to 18 is significantly higher than that of the photoelectric device of Comparative Example 3, and the service life is also significantly longer than that of the photoelectric device of Comparative Example 3.

[0242] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: The invention comprises a first electrode, one or more functional layers and a second electrode which are stacked; wherein the material of at least one of the functional layers comprises a nano material, and a modification layer is combined on the functional layer containing the nano material, and the material of the modification layer comprises an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I): Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from H, a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

2. The optoelectronic device according to claim 1, characterized in that The functional layer includes a light-emitting layer, the modified layer includes a first modified layer, the first modified layer is arranged between the light-emitting layer and the second electrode, and the material of the light-emitting layer includes a first nanomaterial; and / or The functional layer comprises a first carrier functional layer and a light-emitting layer sequentially stacked on the first electrode, the modified layer comprises a second modified layer, the second modified layer is arranged between the first carrier functional layer and the light-emitting layer, and the material of the first carrier functional layer comprises a second nanomaterial; and / or The functional layer comprises a light-emitting layer and a second carrier functional layer which are sequentially stacked on the first electrode, the modified layer comprises a third modified layer, the third modified layer is arranged between the second carrier functional layer and the second electrode, and the material of the second carrier functional layer comprises a third nanomaterial; The materials of the first modified layer, the second modified layer and the third modified layer independently include one or more of the structural formulas shown in formula (I): Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from H, a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

3. The optoelectronic device according to claim 1, characterized in that The M is selected from one of B and Al; and / or The substituted or unsubstituted hydrocarbon group includes a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group; and / or The substituted or unsubstituted heteroalkyl group includes substituted or unsubstituted heteroalkyl, substituted or unsubstituted heteroalkenyl, substituted or unsubstituted heteroalkynyl; and / or The substituents in the substituted hydrocarbon group and the substituents in the substituted heterohydrocarbon group independently include basic groups, and the basic groups include one or more of amino groups, nitro groups, and halogen atoms; and / or The heteroatoms in the heteroalkyl group include one or more of nitrogen, oxygen and sulfur; and / or The main chain carbon number of at least one of R1, R2 and R3 is 22-25.

4. The optoelectronic device according to claim 3, characterized in that The hydrocarbon group includes one of hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, heneicoenyl, heptaenyl, octaenyl, nonadecenyl, eicosyl, hexaynyl, heptaynyl, octaynyl, nonadecinyl, eicosyl; and / or The heteroalkyl group includes one of methoxyethyl, ethoxypropyl, propoxyethyl, 3,6-dioxaheptyl, n-octadecylthio, n-dodecylthio, n-butylethylthio, di(N-propyl)diazenyl, and di(2-methylpropyl)diazenyl.

5. The optoelectronic device according to claim 2, characterized in that The materials of the first modification layer, the second modification layer and the third modification layer independently include one or more of tri-n-hexadecyl borate, triethylamine borate stearate, aluminum monostearate, aluminum distearate and aluminum stearate.

6. The optoelectronic device according to claim 2, characterized in that The average particle size of the first nanomaterial is 3nm to 7nm; and / or The first nanomaterial includes quantum dots and first ligands connected to the surface of the quantum dots; and / or The average particle sizes of the second nanomaterial and the third nanomaterial are 7nm to 16nm respectively; and / or The second nanomaterial includes a first carrier functional material and a second ligand connected to the surface of the first carrier functional material; and / or The third nanomaterial includes a second carrier functional material and a third ligand connected to the surface of the second carrier functional material; and / or The thicknesses of the first modified layer, the second modified layer and the third modified layer are 5 nm to 10 nm respectively.

7. The optoelectronic device according to claim 6, characterized in that The main chain carbon number of the first ligand is 2 to 13; and / or The first ligand, the second ligand and the third ligand independently include Lewis bases, the Lewis bases include one or more of thiol ligands, phosphate ligands and amine ligands, the thiol ligands include one or more of mercaptopropionic acid and thioglycolic acid, the phosphate ligands include one or more of triethyl phosphate and trioctylphosphine, and the amine ligands include one or more of glycine and alanine; and / or The first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer, or the second carrier functional layer is a hole functional layer, and the first carrier functional layer is an electron functional layer; and / or The first carrier functional material includes a hole functional material, and the second carrier functional material includes an electron functional material, or the second carrier functional material includes a hole functional material, and the first carrier functional material includes an electron functional material.

8. The optoelectronic device according to claim 7, characterized in that The quantum dots include one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials. The materials of the single structure quantum dots, the core materials of the core-shell structure quantum dots and the shell materials of the core-shell structure quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include one or more of ZnO, ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe and ZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, SnSeS, SnSeTe and SnSTe. The III-V group compounds include GaN, GaP, GaAs, GaSb, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, One or more of GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound comprises one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material comprises a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2+ Cr 2+ , Mn 2 + 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMY3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Sn 2+ , Cu 2+ 、Ni 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, Y is a halogen anion, including Cl - Br - ,I - One or more of; and / or The electronic functional material comprises one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the material of the first undoped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5, the metal oxide in the first doped metal oxide particle comprises one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5 and Al2O3, the doping element in the first doped metal oxide particle comprises one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In and Ga, the IIB-VIA semiconductor material comprises one or more of ZnS, ZnSe and CdS, the IIIA-VA semiconductor material comprises one or more of InP and GaP, the IB-IIIA-VIA semiconductor material comprises one or more of CuInS and CuGaS; and / or The hole functional material includes one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or The first electrode and the second electrode each independently include one or more of a metal, a carbon material and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

9. A method for preparing a photoelectric device, characterized in that: include: Providing a photoelectric device preform, wherein the photoelectric device preform comprises a first electrode; Forming one or more functional layers on the first electrode, wherein the material of at least one of the functional layers comprises a nanomaterial; forming a modification layer on a side of the functional layer containing the nanomaterial away from the first electrode; forming a second electrode on the functional layer farthest from the first electrode; Wherein, the material of the modification layer includes an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I): Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from H, a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

10. The preparation method according to claim 9, characterized in that: The functional layer includes a light-emitting layer, the material of the light-emitting layer includes a first nanomaterial; the modified layer includes a first modified layer, and the method for forming the first modified layer includes: providing a first modified material, disposing the first modified material on the light-emitting layer to form the first modified layer; and / or The functional layer includes a first carrier functional layer, the material of the first carrier functional layer includes a second nanomaterial; the modified layer includes a second modified layer, and the method for forming the second modified layer includes: providing a second modified material, and arranging the second modified material on the first carrier functional layer to form the second modified layer; and / or The functional layer includes a light-emitting layer and a second carrier functional layer, the second carrier functional layer is arranged on a side of the light-emitting layer away from the first electrode, and the material of the second carrier functional layer includes a third nanomaterial; the modified layer includes a third modified layer, and the method for forming the third modified layer includes: providing a third modified material, and arranging the third modified material on the second carrier functional layer to form the third modified layer; The first modifying material, the second modifying material and the third modifying material each independently include an organic Lewis acid compound, and the organic Lewis acid compound has a structural formula as shown in formula (I): Wherein, M includes a Group IIIA element, R1, R2 and R3 are independently selected from H, a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted heterohydrocarbon group, and the main chain carbon number of at least one of R1, R2 and R3 is 15 to 30.

11. The preparation method according to claim 10, characterized in that: The M is selected from one of B and Al; and / or The substituted or unsubstituted hydrocarbon group includes a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group; and / or The substituted or unsubstituted heteroalkyl group includes substituted or unsubstituted heteroalkyl, substituted or unsubstituted heteroalkenyl, substituted or unsubstituted heteroalkynyl; and / or The substituents in the substituted hydrocarbon group and the substituents in the substituted heterohydrocarbon group independently include basic groups, and the basic groups include one or more of amino groups, nitro groups, and halogen atoms; and / or The heteroatoms in the heteroalkyl group include one or more of nitrogen, oxygen and sulfur; and / or The hydrocarbon group includes one of hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, heneicoenyl, heptaenyl, octaenyl, nonadecenyl, eicosyl, hexaynyl, heptaynyl, octaynyl, nonadecinyl, eicosyl; and / or The heteroalkyl group includes one of methoxyethyl, ethoxypropyl, propoxyethyl, 3,6-dioxaheptyl, n-octadecylthio, n-dodecylthio, n-butylethylthio, di(N-propyl)diazenyl, and di(2-methylpropyl)diazenyl; and / or The main chain carbon number of at least one of R1, R2 and R3 is 22 to 25; and / or The materials of the first modification layer, the second modification layer and the third modification layer independently include one or more of tri-n-hexadecyl borate, triethylamine borate stearate, aluminum monostearate, aluminum distearate and aluminum stearate.

12. The preparation method according to claim 10, characterized in that: The method for forming the first modification layer comprises: mixing the first modification material and a solvent to obtain a modification material dispersion, and disposing the modification material dispersion on the light-emitting layer to form the first modification layer.

13. The preparation method according to claim 12, characterized in that: The solvent includes one or more of diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol; and / or In the modifying material dispersion, the mass concentration of the first modifying material is 3.5 mg / mL to 5 mg / mL.

14. The preparation method according to claim 10, characterized in that: After forming the first modified layer and / or the second modified layer and / or the third modified layer, annealing is further performed; the annealing temperature is 100° C. to 120° C., and the annealing time is 20 min to 30 min.

15. A display device, characterized in that: The invention comprises the optoelectronic device according to any one of claims 1 to 8, or comprises the optoelectronic device prepared by the preparation method according to any one of claims 9 to 14.

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