Light-emitting screen body, method for preparing light-emitting screen body and light-emitting device
By setting up overlap conductive layer and overlap groove in the luminous area of the OLED screen body, the heating problems caused by small contact area and concentrated current are solved, and the luminous brightness is improved.
Patent Information
- Application Number
- CN202411988125.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-03-28
AI Technical Summary
The overlapping area of the existing OLED screen body generates heat due to small contact area and concentrated current, and the resistance value of the overlapping area is large, resulting in low luminance.
A lap conductive layer is provided on one side of the light emitting region of the light emitting screen body, at least one electrode layer of the light emitting region extends to and overlaps it to form a lap conductive layer, and a plurality of lap grooves are opened on the lap area to increase the contact area and reduce contact resistance.
By increasing the contact area between the cathode layer and the overlap conductive layer, reducing the contact resistance, reducing the heat generated by current concentration, and improving the luminous brightness, the problems of heat generation and low brightness of the screen are effectively solved.
Smart Images
Figure CN119730630A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of organic light-emitting technology, and in particular to a light-emitting screen, a method for preparing a light-emitting screen, and a light-emitting device. Background Art
[0002] The overlap area of the OLED screen is a specific area located at the edge of the screen. It mainly serves as a transition between the electrodes inside the screen (such as pixel electrodes, common electrodes, etc.) and external circuits (such as flexible circuit boards, driver chips, etc.). From a physical structure point of view, it is the interface area between the internal circuits of the screen and the external connection components, and is a key part for realizing the transmission of signals, power, etc. The overlap area of existing OLED screens generally includes a stacked overlap electrode layer (mostly a cathode layer) and an electrode lead layer. This overlap method easily causes the screen to heat up. Summary of the invention
[0003] The purpose of the present application is to address the above problems and to provide a light-emitting screen, a method for preparing a light-emitting screen, and a light-emitting device that can improve the overlapping effect and increase the product yield.
[0004] In a first aspect, the present application provides a light-emitting screen, comprising a light-emitting area, wherein the light-emitting area comprises two electrode layers and a light-emitting layer located between the two electrode layers; a lap conductive layer is provided on one side of the light-emitting area, at least one electrode layer of the light-emitting area extends to one side of the lap conductive layer, and overlaps with the lap conductive layer to form a lap area of the lap conductive layer, and at least one lap groove is provided on the lap area.
[0005] According to the technical solutions provided in certain embodiments of the present application, the overlapping area is provided with a plurality of overlapping groove groups distributed along a first direction, each of the overlapping groove groups includes a plurality of overlapping grooves distributed along a second direction, and the second direction intersects with the first direction; two adjacent overlapping groove groups are staggeredly arranged.
[0006] According to the technical solution provided in certain embodiments of the present application, the overlapping groove group includes a first overlapping groove and a second overlapping groove, the cross-sectional shape of the first overlapping groove is a circle or a convex polygon; the cross-sectional shape of the second overlapping groove is a convex polygon; the first overlapping groove and the second overlapping groove are arranged in sequence along the second direction.
[0007] According to the technical solutions provided in certain embodiments of the present application, the overlapping conductive layer includes a main conductive layer and an auxiliary conductive layer which are stacked; the overlapping groove is located on the auxiliary conductive layer, or the overlapping groove is an opening that passes through the auxiliary conductive layer.
[0008] According to the technical solutions provided in certain embodiments of the present application, the distance between two adjacent overlapping grooves is greater than 10um.
[0009] According to the technical solution provided in certain embodiments of the present application, the overlapping area has a groove area for arranging the overlapping groove, and the distance between the edge of the groove area close to the light-emitting area and the edge of the overlapping area close to the light-emitting area is greater than 5um and less than 50um; the distance between the edge of the groove area away from the light-emitting area and the edge of the overlapping area away from the light-emitting area is greater than 100um.
[0010] According to the technical solutions provided in some embodiments of the present application, the main conductive layer is made of indium tin oxide material; and the auxiliary conductive layer is made of conductive metal material.
[0011] According to the technical solutions provided in certain embodiments of the present application, the thickness of the main conductive layer is 10nm~500nm; the thickness of the auxiliary conductive layer is 100nm~1000nm; the thickness of the electrode layer extending to one side of the overlapping conductive layer is 100nm~5000nm.
[0012] In a second aspect, the present application provides a method for preparing the above-mentioned light-emitting screen, comprising: forming an anode layer and a main conductive layer; forming an auxiliary electrode layer on the main conductive layer; forming an insulating layer on the anode layer in the non-luminous area except for the overlapping area; forming an isolation column layer between the main conductive layer and the anode layer and between the light-emitting pixels; forming a light-emitting layer in the light-emitting area; and forming a whole cathode layer.
[0013] In a third aspect, the present application provides a light-emitting device, comprising the light-emitting screen as described above.
[0014] Compared with the prior art, the beneficial effects of the present application are as follows: the light-emitting screen provided by the present application includes a light-emitting area, the light-emitting area includes two electrode layers and a light-emitting layer located between the two electrode layers, a lapped conductive layer is provided on one side of the light-emitting area, at least one electrode layer of the light-emitting area extends to one side of the lapped conductive layer, and overlaps with the lapped conductive layer to form a lapped conductive area of the lapped conductive layer, and at least one lapped groove is provided on the lapped conductive area. The present application provides a lapped conductive layer on one side of the light-emitting area, at least one electrode layer of the light-emitting area extends to the lapped conductive layer and overlaps with the lapped conductive layer to form a lapped conductive area, and a lapped groove is provided on the lapped conductive area. When the light-emitting screen is working, the contact area between the cathode layer and the lapped conductive layer can be increased, and the contact resistance between the two can be reduced. On the one hand, the heat generated by current concentration can be greatly reduced, and the heating phenomenon of the screen can be effectively reduced; on the other hand, since the potential difference between the side of the lapped area 2 close to the bonding area and the side close to the cathode layer 13 is reduced, the problem of low brightness of the screen can be effectively solved.
[0015] It should be understood that the description of technical features, technical solutions, beneficial effects or similar language in this application does not imply that all features and advantages can be realized in any single embodiment. On the contrary, it is understood that the description of features or beneficial effects means that specific technical features, technical solutions or beneficial effects are included in at least one embodiment. Therefore, the description of technical features, technical solutions or beneficial effects in this specification does not necessarily refer to the same embodiment. Furthermore, the technical features, technical solutions and beneficial effects described in the present embodiment can also be combined in any appropriate manner. Those skilled in the art will understand that the embodiment can be realized without one or more specific technical features, technical solutions or beneficial effects of a specific embodiment. In other embodiments, additional technical features and beneficial effects can also be identified in a specific embodiment that does not embody all embodiments. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0017] Figure 1 A schematic diagram of the cross-sectional structure of the light-emitting screen provided in an embodiment of the present application; Figure 2 A schematic diagram of the structure of the light-emitting screen provided in an embodiment of the present application; Figure 3 A schematic diagram of the structure of a first overlapping area of a light-emitting screen provided in an embodiment of the present application; Figure 4 A schematic diagram of the structure of the second overlapping area of the light-emitting screen provided in an embodiment of the present application; Figure 5 A schematic diagram of the structure of the third overlapping area of the light-emitting screen provided in the embodiment of the present application; Figure 6 This is a schematic structural diagram of the fourth overlapping area of the light-emitting screen provided in an embodiment of the present application.
[0018] The text annotations in the figure represent: 1. Light-emitting area; 11. Anode layer; 12. Light-emitting layer; 13. Cathode layer; 2. Overlapping area; 21. Groove area; 22. Overlapping groove; 3. Overlapping conductive layer; 31. Main conductive layer; 32. Auxiliary conductive layer; 4. Isolation column layer. DETAILED DESCRIPTION
[0019] In order to enable those skilled in the art to better understand the technical solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings. The description in this section is only exemplary and explanatory and should not have any limiting effect on the protection scope of the present application. Specifically, the described embodiments are only embodiments of a part of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work should fall within the scope of protection of the present application.
[0020] It should be noted that similar reference numerals and letters represent similar items in the following figures, so once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0021] The light-emitting area of a light-emitting screen (such as an OLED screen) generally includes two electrode layers and a light-emitting layer located between the two electrode layers. In order for the power supply outside the screen to supply power to the electrode layer of the light-emitting area inside the screen, the electrode layer needs to be electrically connected to the external power supply. Existing light-emitting screens mostly adopt a common cathode design, that is, in an OLED screen, the cathode electrode layer is a whole layer of electrodes, all pixels are connected to the same cathode electrode layer, and each pixel has its own independent anode electrode. For such a light-emitting screen with a whole layer of electrode layers, an overlap area needs to be set to overlap the whole layer of electrode layers with the lead wires, so as to lead them to the bonding area for bonding. The overlapping area of an existing OLED screen generally includes a stacked whole electrode layer (mostly a cathode layer) and an overlapping electrode layer overlapping therewith. In this overlapping method, on the one hand, the overlapping area is relatively small compared to the whole electrode layer, that is, the contact area between the whole electrode layer and the overlapping electrode layer is limited, and the OLED screen is generally driven by a constant current. When working, the current of the whole electrode layer will converge to the overlapping area, resulting in a large current in the overlapping area. The OLED screen generates a lot of heat during operation, which can easily cause the screen to heat up. On the other hand, the resistance of the overlapping area is relatively large, resulting in a large potential difference between the overlapping area close to the bonding area and the cathode layer 13, which can easily cause the screen to emit low brightness.
[0022] To solve the above problems, refer to Figure 1 and Figure 2The present application proposes a light-emitting screen, including a light-emitting area 1, the light-emitting area 1 includes two electrode layers and a light-emitting layer 12 located between the two electrode layers; a lap conductive layer 3 is provided on one side of the light-emitting area 1, at least one electrode layer of the light-emitting area 1 extends to one side of the lap conductive layer 3, and overlaps with the lap conductive layer 3 to form a lap area 2 of the lap conductive layer 3, and at least one lap groove 22 is provided on the lap area 2.
[0023] Specifically, Figure 1 The right half of the figure is a longitudinal cross-sectional view of the light-emitting area 1, which includes two electrode layers, namely an anode layer 11 and a cathode layer 13, a light-emitting layer 12 is provided between the anode layer 11 and the cathode layer 13, and in order to divide the light-emitting area 1 into different pixel units, an isolation column layer 4 is also provided in the light-emitting area 1, and the isolation column layer 4 is made of photoresist; on the other hand, in order to prevent the anode layer 11 and the cathode layer 13 from short-circuiting, an insulating layer is provided on the anode layer 13 in the non-light-emitting area except for the overlapping area, and the thickness is 50nm~5000nm; preferably, the thickness is 1500nm~2500nm. Figure 1 The left half of the figure is the overlapping area 2, and an overlapping conductive layer 3 is provided on one side of the light-emitting area 1. In the present embodiment, the electrode layer used for overlapping is the cathode layer 13, and the cathode layer 13 extends to the top of the overlapping conductive layer 3, and overlaps and overlaps with it to form the overlapping area 2. The overlapping area 2 has a plurality of overlapping grooves 22 on one side close to the cathode layer 13. In addition to contacting the surface of the overlapping conductive layer 3, the cathode layer 13 also contacts the inner walls (including the side walls and the bottom wall) of each overlapping groove 22.
[0024] In this embodiment, the arrangement of the overlapping groove 22 on the overlapping area 2 can increase the contact area between the cathode layer 13 and the overlapping conductive layer 3 and reduce the contact resistance therebetween when the light-emitting screen is working. On the one hand, it can greatly reduce the heat generated by current concentration and effectively reduce the heating phenomenon of the screen. On the other hand, since the potential difference between the overlapping area 2 close to the bonding area and the side close to the cathode layer 13 is reduced, the problem of low brightness of the screen can be effectively solved.
[0025] Furthermore, the overlapping area 2 is provided with a plurality of overlapping groove groups distributed along a first direction, each overlapping groove group includes a plurality of overlapping grooves 22 distributed along a second direction, the second direction intersects the first direction; and two adjacent overlapping groove groups are staggered.
[0026] Specifically, refer to Figures 3 to 6, the first direction is the horizontal direction in the figure, the second direction intersects with the first direction, and the angle formed by the intersection of the two can be an acute angle or a right angle. In this embodiment, the angle formed by the intersection of the two is a right angle, that is, the second direction is perpendicular to the first direction, and the second direction is the vertical direction in the figure. The multiple overlapping groove groups distributed along the first direction provide an initial shunt channel for the current from the electrode layer (i.e., cathode layer 13) of the light-emitting area 1. Each overlapping groove group also includes overlapping grooves 22 distributed along the second direction, which further increases the contact area between the cathode layer 13 and the overlapping conductive layer 3.
[0027] Furthermore, the overlapping groove group includes a first overlapping groove and a second overlapping groove, the cross-sectional shape of the first overlapping groove is circular or polygonal; the cross-sectional shape of the second overlapping groove is polygonal; preferably, the cross-sectional shape of the first overlapping groove is circular or a convex polygon; the cross-sectional shape of the second overlapping groove is a convex polygon; the first overlapping groove and the second overlapping groove are arranged sequentially along the second direction.
[0028] Specifically, each overlapping groove group includes a first overlapping groove and a second overlapping groove arranged alternately in sequence along the second direction. The cross-sectional shape of the first overlapping groove and the cross-sectional shape of the second overlapping groove can be of the same type or of different types. Optionally, the cross-sectional shape of the first overlapping groove and the cross-sectional shape of the second overlapping groove are both convex polygons. Alternatively, the cross-sectional shape of the first overlapping groove is circular, and the cross-sectional shape of the second overlapping groove is a convex polygon, wherein the convex polygon can be a triangle, a rhombus, a square, a regular hexagon, a regular octagon, etc. This arrangement allows more overlapping grooves 22 to be arranged within the limited area of the overlapping region 2. Preferably, setting the overlapping groove 22 to a regular hexagon under the same area can increase the maximum contact area.
[0029] Next, several overlapping areas with different structures are introduced as examples.
[0030] Figure 3 Schematic diagram of the structure of the first overlapping area. In the figure, six overlapping groove groups are distributed along the first direction. The cross-sectional shapes of the first overlapping groove and the second overlapping groove of the overlapping groove group are the same, both are square.
[0031] Figure 4Schematic diagram of the structure of the second overlapping area, in which five overlapping groove groups are distributed along the first direction, and the cross-sectional shapes of the first overlapping groove and the second overlapping groove of the overlapping groove group are the same, both of which are regular hexagons. Among the two adjacent overlapping groove groups, one includes three overlapping grooves 22 distributed along the second direction, and the other includes two overlapping grooves 22 distributed along the second direction. Any overlapping groove 22 is parallel to a group of adjacent sides of other overlapping grooves 22 adjacent thereto. In addition, in order to further increase the contact area between the cathode layer 13 and the overlapping conductive layer 3, the ends of the overlapping groove groups containing fewer overlapping grooves 22 are filled with trapezoids.
[0032] Figure 5 This is a structural schematic diagram of the third overlapping area. In the figure, five overlapping groove groups are distributed along the first direction. The cross-sectional shapes of the first overlapping groove and the second overlapping groove of the overlapping groove group are different. The cross-sectional shape of the first overlapping groove is circular, and the cross-sectional shape of the second overlapping groove is square. The first overlapping groove and the second overlapping groove in two adjacent overlapping groove groups are correspondingly arranged adjacent to each other.
[0033] Figure 6 This is a structural schematic diagram of the fourth overlapping area. In the figure, five overlapping groove groups are distributed along the first direction. The cross-sectional shapes of the first overlapping groove and the second overlapping groove of the overlapping groove group are different. The cross-sectional shape of the first overlapping groove is circular, and the cross-sectional shape of the second overlapping groove is triangular. The first overlapping groove and the second overlapping groove in two adjacent overlapping groove groups are correspondingly arranged adjacent to each other.
[0034] Furthermore, the overlapping conductive layer 3 includes a main conductive layer 31 and an auxiliary conductive layer 32 which are stacked; the overlapping groove 22 is located on the auxiliary conductive layer 32 , or the overlapping groove 22 is an opening penetrating the auxiliary conductive layer 32 .
[0035] For details, please refer to Figure 1 The main conductive layer 31 and the anode layer 11 are prepared in the same layer to simplify the process. The two can be made of the same material, generally indium tin oxide, which has a relatively large resistance. Therefore, an auxiliary conductive layer 32 is provided on the surface of the main conductive layer 31 to reduce the resistance value of the overlapping conductive layer 3. The overlapping groove 22 can be formed on the auxiliary conductive layer 32 alone, that is, the overlapping groove 22 is formed by directly grooved on the side of the auxiliary conductive layer 32 away from the main conductive layer 31; the overlapping groove 22 can also be formed by the auxiliary conductive layer 32 and the main conductive layer together, that is, a through opening is provided on the auxiliary conductive layer 32, and the main conductive layer 31 is located on the side of the opening away from the cathode layer 13, and the two together form the overlapping groove 22.
[0036] Furthermore, the distance between two adjacent overlapping grooves 22 is greater than or equal to 5 um, and may be 10 um, 15 um, 20 um, 30 um, 40 um, 50 um or 100 um, etc.
[0037] Specifically, if the two adjacent overlapping grooves 22 are parallel to each other, that is, the distances at all locations are equal, then the spacing is the distance at any position on the sides close to each other; if the distances at all locations on the two adjacent overlapping grooves 22 are not equal, then the spacing refers to the distance at the minimum distance on the sides close to each other. Figures 3 to 6 In the figure, a represents the spacing between two adjacent overlapping grooves 22. By setting the spacing to be greater than or equal to 5um, the potential difference in the overlapping area can be reduced, reducing the risk of short circuit. If the spacing value is too small, the height difference between the top and bottom of the overlapping groove 13 is large, which is easy to cause breakage during the preparation of the cathode layer 13, resulting in poor overlapping effect.
[0038] Furthermore, the overlapping area 2 has a groove area 21 for arranging an overlapping groove 22, and the distance b between the edge of the groove area 21 close to the light-emitting area 1 and the edge of the overlapping area 2 close to the light-emitting area 1 is greater than 5um and less than 50um, and can be 10um, 20um, 30um, 40um, or 50um; the distance c between the edge of the groove area 21 away from the light-emitting area 1 and the edge of the overlapping area 2 away from the light-emitting area 1 is greater than 100um.
[0039] For details, please refer to Figure 1 and Figure 2 The overlapping area 2 refers to the area formed by the overlapping conductive layer 3 and the electrode layer (i.e., the cathode layer 13) extending from the light-emitting area 1. The edge of the overlapping area 2 close to the light-emitting area 1 is the inner edge, and the edge of the overlapping area 2 close to the bonding area (i.e., away from the light-emitting area 1) is the outer edge. The area on the overlapping area 2 for arranging the overlapping groove 22 is the groove area 21. On the one hand, by setting the distance between the edge of the groove area 21 close to the light-emitting area 1 and the inner edge of the overlapping area 2 to be greater than 5um, a buffer plane can be formed between the edge of the groove area 21 and the inner edge of the overlapping area 2, thereby reducing the risk of cathode fracture. On the other hand, by setting the distance between the edge of the groove area 21 close to the light-emitting area 1 and the inner edge of the overlapping area 2 to be less than 50um, the aperture ratio of the light-emitting screen can be improved under the premise of reducing the risk of cathode fracture. Similarly, the purpose of setting the distance between the edge of the groove area 21 close to the bonding area (i.e., away from the light-emitting area 1) and the outer edge to be greater than 100um is also to reduce the risk of cathode fracture and improve the overlapping effect.
[0040] Furthermore, the main conductive layer 31 is made of indium tin oxide material; and the auxiliary conductive layer 32 is made of conductive metal material.
[0041] Specifically, the main conductive layer 31 is made of indium tin oxide, the same material as the anode layer 11 , the auxiliary conductive layer 32 is made of metal materials such as copper, aluminum, or molybdenum, and the cathode layer 13 is made of materials such as aluminum, magnesium, or silver.
[0042] Furthermore, the thickness of the auxiliary electrode layer 32 is greater than the thickness of the electrode layer extending to one side of the overlapping conductive layer 3 .
[0043] Furthermore, the thickness of the main conductive layer 31 is 10nm~500nm; preferably, the thickness is 130nm~170nm; the thickness of the auxiliary conductive layer 32 is 100nm~1000nm; preferably, the thickness is 450nm~650nm; the thickness of the electrode layer extending to one side of the overlapping conductive layer 3 is 100nm~5000nm; preferably, the thickness is 150nm~250nm.
[0044] Specifically, the thickness of the main conductive layer 31 is, for example, 50nm, 100nm, 200nm, 300nm, or 400nm; the thickness of the auxiliary conductive layer 32 is, for example, 150nm, 300nm, 500nm, 600nm, or 800nm; the thickness of the electrode layer extending to one side of the overlapping conductive layer 3 is, for example, 150nm, 500nm, 1000nm, 2000nm, 3000nm or 4000nm.
[0045] The present application also provides a method for preparing the above-mentioned luminous screen, comprising: An anode layer 11 and a main conductive layer 31 are formed on a substrate; forming an auxiliary electrode layer 32 on the main conductive layer 31; forming an insulating layer on the anode layer 11 in the non-luminescent region except the overlapping region 2; An isolation column layer 4 is formed between the main conductive layer 31 and the anode layer 11 and between the light-emitting pixels; forming a light-emitting layer 12 in the light-emitting region 1; The entire cathode layer 13 is formed.
[0046] The present application also provides a light-emitting device, comprising the light-emitting screen as described above.
[0047] This article uses specific examples to illustrate the principles and implementation methods of this application. The description of the above embodiments is only used to help understand the method and its core ideas of this application. The above is only the preferred implementation method of this application. It should be pointed out that due to the limitations of textual expression and the objective existence of infinite specific structures, ordinary technicians in this technical field can make several improvements, modifications or changes without departing from the principles of the present invention, and can also combine the above technical features in an appropriate manner; these improvements, modifications, changes or combinations, or the direct application of the inventive concept and technical solution to other occasions without improvement, should be regarded as the scope of protection of this application.
Claims
1. A light-emitting screen, characterized in that: It includes a light-emitting area, which includes two electrode layers and a light-emitting layer located between the two electrode layers; a lapped conductive layer is provided on one side of the light-emitting area, at least one electrode layer of the light-emitting area extends to one side of the lapped conductive layer and overlaps with the lapped conductive layer to form an lapped area of the lapped conductive layer, and at least one lapped groove is provided on the lapped area.
2. The light-emitting screen according to claim 1, characterized in that: The overlapping area is provided with a plurality of overlapping groove groups distributed along a first direction, each of the overlapping groove groups includes a plurality of overlapping grooves distributed along a second direction, the second direction intersects the first direction; and two adjacent overlapping groove groups are staggered.
3. The light-emitting screen according to claim 2, characterized in that: The overlapping groove group includes a first overlapping groove and a second overlapping groove, the cross-sectional shape of the first overlapping groove is a circle or a convex polygon; the cross-sectional shape of the second overlapping groove is a convex polygon; the first overlapping groove and the second overlapping groove are arranged in sequence along the second direction.
4. The light-emitting screen according to claim 1, characterized in that: The overlapping conductive layer comprises a main conductive layer and an auxiliary conductive layer which are stacked; the overlapping groove is located on the auxiliary conductive layer, or the overlapping groove is an opening that penetrates the auxiliary conductive layer.
5. The light-emitting screen according to claim 1, characterized in that: The distance between two adjacent overlapping grooves is greater than 5um.
6. The light-emitting screen according to claim 1, characterized in that: The overlapping area has a groove area for arranging the overlapping groove, and the distance between the edge of the groove area close to the light-emitting area and the edge of the overlapping area close to the light-emitting area is greater than 5um and less than 50um; the distance between the edge of the groove area away from the light-emitting area and the edge of the overlapping area away from the light-emitting area is greater than 100um.
7. The light-emitting screen according to claim 4, characterized in that: The main conductive layer is made of indium tin oxide material; the auxiliary conductive layer is made of conductive metal material.
8. The light-emitting screen according to claim 4, characterized in that: The thickness of the main conductive layer is 10nm-500nm; the thickness of the auxiliary conductive layer is 100nm-1000nm; the thickness of the electrode layer extending to one side of the overlapping conductive layer is 100nm-5000nm.
9. A method for preparing the light-emitting screen according to any one of claims 1 to 8, characterized in that: include: forming an anode layer and a main conductive layer; forming an auxiliary electrode layer on the main conductive layer; forming an insulating layer on the anode layer in the non-luminescent region except for the overlapping region; forming an isolation column layer between the main conductive layer and the anode layer and between the light-emitting pixels; forming a light-emitting layer in the light-emitting region; An entire cathode layer is formed.
10. A light emitting device, characterized in that: It comprises the light-emitting screen body as described in any one of claims 1 to 8.