Transparent heater for improving epitaxial reactor productivity

Abstract

A method and apparatus for heating a transparent component within a semiconductor processing chamber is described. The transparent member is heated using a transparent heater coupled to the transparent member. The transparent heater comprises a supporting seat, an electrode layer and a covering layer. The electrode layer is a heating element. The transparent heater has an optical transparency of greater than about 80% at a wavelength emitted by the one or more radiation sources within the processing chamber. The transparent heater is a flexible transparent heater or is formed by a plurality of sub-heaters.

Description

Technical Field

[0001] Embodiments of the present invention generally relate to apparatus and methods for manufacturing semiconductor devices. More specifically, the apparatus disclosed herein relates to heating a transparent surface on an outer surface of a reactor body of an epitaxial deposition processing chamber using one or more resistive heating elements. Methods of using the apparatus are also disclosed.

[0002] Description of the Prior Art

[0003] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. A method of substrate processing includes depositing a material, such as a dielectric material or a conductive material, on an upper surface of a substrate in a processing chamber. For example, epitaxy is a deposition process that grows a thin, ultrapure layer, typically silicon or germanium, on a surface of a substrate. The material may be deposited in a lateral flow chamber by flowing a process gas parallel to the surface of a substrate positioned on a support, and thermally decomposing the process gas to deposit material from the process gas onto the substrate surface.

[0004] During epitaxial deposition, the processing space is separated into an upper region and a lower region. In the upper region, the processing gas flows over the top surface of the substrate and the susceptor. The lower region is purged to reduce the amount of processing gas flowing into the lower region. However, the upper region and the lower region are not isolated from each other. When the processing gas inadvertently flows into the lower region, a film may be formed on the lower transmissive member within the processing space. The temperature of the lower transmissive member determines the amount of particle / film deposition on the lower transmissive member and the film etching rate during the processing chamber cleaning. Due to the non-uniform temperature of the lower transmissive member, the film coating on the lower transmissive member becomes non-uniform over time and causes a decrease in the predictability of deposition on the substrate.

[0005]

[0006] Therefore, a need exists for improved temperature control of transmissive components within a processing chamber. Summary of the invention

[0006] In one embodiment, a heater assembly configured for use during semiconductor manufacturing includes a chamber component; a transparent heater coupled to the chamber component, and the transparent heater includes: a support base; and an electrode disposed on the support base.

[0007] In another embodiment, a heater assembly configured for use during semiconductor manufacturing includes a transmissive window; a transparent heater coupled to the transmissive window, and the transparent heater includes: a support base; and an electrode disposed on the support base.

[0008] In another embodiment, a processing chamber configured for use during semiconductor processing includes: a chamber body; an upper transmissive window disposed within the chamber body; a lower transmissive window disposed within the chamber body; a substrate support disposed between the upper transmissive window and the lower transmissive window; and a transparent heater coupled to one of the upper transmissive window or the lower transmissive window.

[0009] Brief description of the attached figure

[0010] In order that the above-described features of the present invention can be understood in detail, a more particular description of the present invention, briefly summarized above, may be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are not therefore to be considered limiting of the scope of the present invention, and the drawings may allow for other equally effective embodiments.

[0011] Figure 1A to Figure 1B is a schematic diagram of a deposition chamber according to an embodiment of the present case.

[0012] Figure 2 for Figure 1A Schematic close-up of a portion of a deposition chamber.

[0013] Figure 3 is a schematic cross-sectional view of a transparent heater according to an embodiment of the present case.

[0014] FIG. 4A to FIG. 4D Schematic plan view of each heater according to an embodiment of the present case.

[0015] Figure 5 is a schematic plan view of a substrate transfer robot having a transparent heater disposed thereon according to an embodiment of the present case.

[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0017] The present invention is directed to heating a transparent surface on the outer surface of a reactor body of an epitaxial deposition processing chamber using one or more resistive heating elements. More specifically, an upper transmissive member and a lower transmissive member of an epitaxial deposition processing chamber may have one or more transparent heaters located thereon to reduce the effects of cold spots on film formation and removal on the transmissive members. The transparent heaters are configured to allow radiation from a lamp or other radiation device within the processing chamber to pass therethrough, and the transparent heaters are also flexible to allow the transparent heaters to be located on curved or irregular surfaces, such as near the neck of a transmissive member.

[0018] In deposition processes, such as epitaxial deposition processes, high process temperatures are often utilized. Therefore, the heaters discussed herein are configured to withstand high process temperatures, adhere to irregular and curved surfaces, maintain optical transparency within a desired wavelength range, and quickly and accurately achieve location-specific heating of transmissive components. The use of heaters as described herein on chamber components, such as optically transparent components, reduces temperature gradients across the optically transparent components, and thus achieves more control over film deposition and etching on the optically transparent components.

[0019] It has been found that lower temperatures at certain portions of the transmissive member within the processing chamber result in increased condensation of deposition precursors (such as epitaxial deposition precursors) on portions of the transmissive member while reducing etching efficiency at those same portions of the transmissive member. Thus, location-specific heating of the transmissive member simultaneously reduces undesired film deposition while increasing the efficiency of etching that will remove deposited films.

[0020] Figure 1A to Figure 1B is a schematic diagram of a deposition chamber 100 having various transparent heaters disposed therein. Figure 1A FIG. 1 is a schematic diagram of a first embodiment of a deposition chamber 100 . Figure 1B 1 is a schematic diagram of a second embodiment of a deposition chamber 100. The deposition chamber 100 is used to grow epitaxial films on a substrate such as a substrate 102. The deposition chamber 100 generates a cross flow of precursors across a top surface 150 of the substrate 102.

[0021] The deposition chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. A substrate support 106, an upper transmission window 108, a lower transmission window 110, a plurality of upper lamps 141, and a plurality of lower lamps 143 are disposed within the chamber body. As shown, a controller 120 is in communication with the deposition chamber 100 and is used to control processes such as those described herein. The substrate support 106 is disposed between the upper transmission window 108 and the lower transmission window 110. The plurality of upper lamps 141 are disposed between the upper transmission window 108 and a cover 154. The cover 154 includes a plurality of sensors 153 disposed therein for measuring the temperature within the deposition chamber 100. The plurality of lower lamps 143 are disposed between the lower transmission window 110 and the bottom plate 152. The plurality of lower lamps 143 form a lower lamp assembly 145.

[0022] The processing space 136 is formed between the upper transmission window 108 and the lower transmission window 110. The upper transmission window 108 may have a dome shape and may be referred to as an upper dome. The upper transmission window 108 has an upper dome portion 109 and a support ring 111, which is sometimes referred to as a central window portion in embodiments in which the upper dome portion 109 is not dome-shaped. The support ring 111 is coupled to the outer edge of the upper dome portion 109 and is disposed between the upper body 156 and the flow module 112. The lower transmission window 110 may also be dome-shaped, so that the lower transmission window 100 has a lower dome portion 113, which is sometimes referred to as a central window portion in embodiments in which the lower dome portion 113 is not dome-shaped, wherein the central opening 123 is located at the center of the lower dome portion 113 so that the shaft 118 of the substrate support 106 passes through the central opening. The hollow transmissive member shaft 115 extends from the central opening 123 in the lower dome portion 113 of the lower transmissive window 110 along the length of the shaft 118. The hollow transmissive member shaft 115 is connected to the lower dome portion 113 at the neck 117 of the lower transmissive window 110. The lower dome portion 113 of the lower transmissive window 100 is connected to the support ring 119 at the outer edge of the lower dome portion 113. The support ring 119 is disposed between the lower body 148 and the flow module 112.

[0023] The processing volume 136 has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to the shaft 118. The shaft is connected to the motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136. The motion assembly 121 includes a rotary actuator 122 that rotates the shaft 118 and / or the substrate support 106 about the longitudinal axis A of the deposition chamber 100. The motion assembly 121 further includes a vertical actuator 124 to raise and lower the substrate support 106 in the z-axis direction. The motion assembly includes a tilt adjustment device 126 for adjusting the planar orientation of the substrate support 106 , and a lateral adjustment device 128 for adjusting the position of the shaft 118 and the substrate support 106 side to side within the processing volume 136 .

[0024] The substrate support 106 may include a lift pin hole 107 disposed therein. The lift pin hole 107 is sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from the processing position to the transfer position.

[0025] The flow module 112 includes a plurality of process gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust outlets 116. The plurality of process gas inlets 114 and the plurality of purge gas inlets 164 are disposed on a side of the flow module 112 opposite to the one or more exhaust outlets 116. One or more flow guides 146 are disposed below the plurality of process gas inlets 114 and the one or more exhaust outlets 116. The flow guide 146 is disposed above the purge gas inlet 164. The liner 163 is disposed on an inner surface of the flow module 112 and protects the flow module 112 from the reaction gas used during the deposition process. The process gas inlet 114 and the purge gas inlet 164 are positioned so that the gas flows parallel to the top surface 150 of the substrate 102 disposed in the processing space 136. The process gas inlet 114 is fluidly connected to the process gas source 151. The purge gas inlet 164 is fluidly connected to the purge gas source 162. The one or more exhaust outlets 116 are fluidly connected to the exhaust pump 157. Each of the process gas source 151 and the purge gas source 162 may be configured to supply one or more precursors or process gases into the processing volume 136 .

[0026] One or more heaters are coupled to an outer surface of one or both of the upper transmissive window 108 or the lower transmissive window 110. The one or more heaters are optically transparent to radiation of wavelengths emitted by the plurality of upper lamps 141 and the plurality of lower lamps 143. Various configurations of heaters may be utilized. Figure 1A A first embodiment of how one or more transparent heaters 175 may be used within the deposition chamber 100 is illustrated. The one or more transparent heaters 175 are attached to the lower transmissive window 110 at an outer surface 172. The outer surface 172 is opposite the surface exposed to the processing volume 136. The one or more transparent heaters 175 are flexible and are coupled to the outer surface 172 between the lower dome portion 113 and the neck 117 of the lower transmissive window 110. The one or more transparent heaters 175 are located over a portion of the lower transmissive window 110 that would typically have a cold spot.

[0027] In some embodiments, there is a single transparent heater 175 wrapped around the neck 117 of the lower transmissive window 110 so that the transparent heater 175 forms a ring or a partial ring. The ring formed by the transparent heater 175 can be split on one side so that the transparent heater 175 can be assembled around the hollow transmissive member shaft 115. Alternatively, the transparent heater 175 has no split and is assembled on the hollow transmissive shaft member 115 and slides into place around the neck 117 of the lower transmissive window 110.

[0028] In other embodiments, the one or more transparent heaters 175 are a plurality of transparent heaters 175 tiled together to form a ring, such as two or more transparent heaters 175 forming a ring or three or more transparent heaters 175 forming a ring.

[0029] Figure 1B A second embodiment of how transparent heaters 175, 176, 177, 178 may be used within a deposition chamber 100 is shown. In addition to one or more transparent heaters 175 attached to the lower transmissive window 110, Figure 1B The deposition chamber 100 further includes one or more transmissive member shaft heaters 178, one or more neck heaters 177, and one or more upper transmissive member heaters 176 disposed on the outer surface 174 of the upper transmissive window 108. Each of the transparent heater 175, the neck heater 177, the transmissive member shaft heater 178, and the upper transmissive member heater 176 are similar in composition, but can be independently controlled to provide temperature control of different areas of the upper and lower transmissive windows 108, 110. Each of the transparent heater 175, the neck heater 177, the transmissive member shaft heater 178, and the upper transmissive member heater 176 can also be further divided into smaller areas of different heaters, which can be independently controlled to provide fine adjustment of the upper and lower transmissive windows 108, 110.

[0030] One or more transmissive member shaft heaters 178 are disposed on the outer surface 172 at the hollow transmissive member shaft 115 so that the one or more transmissive member shaft heaters 178 extend downward from the neck 117 toward the motion assembly 121. One or more neck heaters 177 are disposed on the outer surface 172 at the neck 117 of the lower transmissive window 110. An upper transmissive member heater 176 is disposed on the outer surface 174 of the upper dome portion 109. In some embodiments, the upper transmissive member heater 176 covers most of the outer surface 174 on the upper dome portion 109, such as covering 75% of the outer surface 174 of the upper dome portion 109, such as covering 90% of the outer surface 174 of the upper dome portion 109.

[0031] exist Figure 1B In the embodiment of the present invention, one or more transparent heaters 175 can also be configured to Figure 1A The embodiment of covers a larger portion of the lower transmissive window 110. Figure 1B In the deposition chamber 100 , the one or more transparent heaters 175 cover almost the entire outer surface 172 of the lower dome portion 113 of the lower transmission window 110 , such as more than 90% of the surface area of ​​the outer surface 172 of the lower dome portion 112 .

[0032] Figure 2 for Figure 1A A schematic close-up view of a portion of a deposition chamber 100 is shown. Figure 2As shown in the close-up of , one or more transparent heaters 175 are directly coupled to the outer surface 172 of the lower transmissive window 110 at a contact surface 204 of the transparent heater 175. The contact surface 204 is flush with the outer surface 172 of the lower transmissive window 110 and may have an adhesive disposed thereon.

[0033] The adhesive is configured to adhere the transparent heater 175 to the lower transmissive window 110. The adhesive may be heat activated. The adhesive itself is also optically transparent to prevent radiation from entering and leaving the transparent heater 175. Alternatively, it is contemplated that the optical adhesive may be omitted depending on the processing temperature requirements. In the example described, a support base 304 (see FIG. 1 ) for the transparent heater 175 is provided. Figure 3 ) and / or the encapsulation layer 308 may be formed of mica. In the example, the transparent heater 175 may be held in place using a small glass tab that is directly bonded to the lower transmissive window 110 (or upper transmissive window, if desired) by an ozone plasma treatment. The tab may support the transmissive window 110 or may facilitate adhesion between the transmissive window 110 and the transparent heater 175. The support base 304 and the encapsulation layer 308 may contact each other at their edges (thereby encapsulating the electrode 306), and the support base 304 and the encapsulation layer may be adhered to each other directly or via adhesion to the electrode 306. In yet another example, if the support base 304 and / or the encapsulation layer 308, one or both of the support base 304 and / or the encapsulation layer 308 may be directly bonded to the transparent window using an ozone plasma treatment.

[0034] In some embodiments, the outer surface 172 of the lower transmissive window 110 and the contact surface 204 of the transparent heater 175 are bonded using a vacuum ultraviolet (VUV) irradiation process, wherein one of the transparent heater 175 or the transmissive window 110 is exposed to oxygen radicals and ozone to react with one of the contact surface 204 or the outer surface 172. Bonding the lower transmissive window 110 and the transparent heater 175 reduces the number of boundaries through which radiation passes, and also reduces the potential energy lost through an additional adhesive layer, compared to using an adhesive.

[0035] The lead wire 206 is connected to at least a portion of the transparent heater 175. The lead wire 206 is an electric wire or a cable connecting the transparent heater 175 to the controller 120. The lead wire 206 may extend along the outer side of the lower transmission window 110.

[0036] Each of the transparent heaters 176, 177, 178 is further coupled to its respective upper or lower transmissive window 108, 110 using an adhesive or bonding techniques similar to those used to bond the transparent heater 175 to the lower transmissive window 175. Each of the transparent heaters 176, 177, 178 may be further coupled to the controller 120 via one or more leads 206.

[0037] Figure 3 is a schematic cross-sectional view of the transparent heater 175. The composition of each of the transparent heaters 176, 177, 178 is similar to that of the transparent heater 175. The transparent heater 175 includes a support 304, an electrode 306, and an encapsulation layer 308. The electrode 306 may be further referred to as a heating element, and may function as a resistive heating element.

[0038] The support base 304 is a transparent support base and is disposed on the side of the electrode 306 opposite to the lower transmission window 110. The support base 304 is an optically transparent material and does not degrade at high processing temperatures, such as a temperature greater than about 400° C., such as a temperature greater than about 500° C., such as a temperature greater than about 600° C., and such as a temperature greater than about 700° C. The support base 304 is the thickest layer of the transparent heater 175 among the support base 304, the electrode 306, and the encapsulation layer 308.

[0039] The support base 304 has an optical transparency of greater than about 80% at a desired radiation wavelength, such as an optical transparency of greater than about 85%, such as an optical transparency of greater than about 90%, such as an optical transparency of greater than about 95%, such as an optical transparency of greater than about 97%, such as an optical transparency of greater than about 99%. The desired radiation wavelength is a wavelength emitted by one or more radiation sources in the deposition chamber 100. In some embodiments, the desired radiation wavelength is an infrared (IR) wavelength. In some embodiments, the desired radiation wavelength is less than about 5000nm, such as about 300nm to about 5000nm, such as about 500nm to about 3000nm, such as about 500nm to about 2500nm, such as about 500nm to about 2000nm, such as about 500nm to about 1500nm, such as about 500nm to about 1000nm.

[0040] The support base 304 is formed of a flexible material so that the support base 304 can be bent along the curvature of one of the upper transmission window 108 or the lower transmission window 110. The flexibility of the support base 304 allows the transparent heater 177 to be placed on the neck of the lower transmission window 110. The support base 304 may have a Young's modulus of less than about 150 GPa, such as about 0.1 GPa to about 150 GPa, such as about 0.1 GPa to about 100 GPa, such as about 0.5 GPa to 75 GPa, such as about 1 GPa to about 50 GPa.

[0041] The support base 304 can be formed of one material or a combination of multiple materials. In some embodiments, the support base 304 is a mica material, such as a muscovite material or a fluorite mica. The mica material is flexible and can be heated to a high processing temperature without damaging the support base 304. In some embodiments, commercially available materials can be used to form the support base 304, such as Manufactured Glass or Glass.

[0042] In some embodiments, a non-flexible material is used for the support base 304, and a plurality of transparent heaters 175 are assembled together to form a transparent heater assembly. Each of the transparent heaters 175 within the transparent heater assembly can be mechanically and electrically coupled together. In some embodiments, infrared (IR) grade fused silica is used. Tiling a plurality of transparent heaters 175 together enables a wider range of materials to be used for the support base 304 and improves conformity with the outer surface 172 of the lower transmission window 110.

[0043] Electrode 306 is formed between support base 304 and encapsulation layer 308. Electrode 306 has a sheet resistance of 1 ohm / square to 1000 ohm / square, such as 1 ohm / square to 1000 ohm / square, or such as 100 ohm / square to 8000 ohm / square. The resistivity of electrode 306 enables transparent heater 175 to generate heat. Electrode 306 can be configured to output about 100 W / m 2 Up to 5000W / m 2 Power, such as about 1000W / m 2 About 2500W / m 2 , or such as about 2500 W / cm 2 About 5000W / m 2 of power.

[0044] The electrode 306 is formed of an optically transparent material so that the electrode has an optical transparency of greater than about 80% at a desired radiation wavelength, such as an optical transparency of greater than about 85%, such as an optical transparency of greater than about 90%, such as an optical transparency of greater than about 95%, such as an optical transparency of greater than about 97%, such as an optical transparency of greater than about 97%. The desired radiation wavelength is a wavelength emitted by one or more radiation sources within the deposition chamber 100. In some embodiments, the desired radiation wavelength is an infrared (IR) wavelength. In some embodiments, the desired radiation wavelength is less than about 5000 nm, such as about 300 nm to about 5000 nm, such as about 500 nm to about 3000 nm, such as about 500 nm to about 2500 nm, such as about 500 nm to about 2000 nm, such as about 500 nm to about 1500 nm, such as about 500 nm to about 1000 nm.

[0045] Electrode 306 is flexible and can be stretched in a similar manner as support base 304. Electrode 306 has a Young's modulus of less than about 150 GPa, such as about 0.1 GPa to about 150 GPa, such as about 0.1 GPa to about 100 GPa, such as about 0.5 GPa to 75 GPa, such as about 1 GPa to about 50 GPa.

[0046] In some embodiments, electrode 306 is formed of a transparent conductive oxide, such as a metal oxide or a transition metal oxide. Exemplary conductive oxides include indium tin oxide, indium gallium zinc oxide, or perovskite CaVO3. In some embodiments, electrode 306 is formed of a nanowire network, such as a metal nanowire network. The nanowire network may be one or a combination of a silver nanowire network, an aluminum nanowire network, a gold nanowire network, or a copper nanowire network. The nanowire network is a covering network of wires having a diameter less than about 250 nm, such as less than about 50 nm, such as less than about 25 nm. In one example, the diameter of the wire is about 25 nm to about 250 nm.

[0047] Due to the optical transparency of the nanowire network and the flexibility of the nanowire network, the nanowire network is advantageous for use as an electrode 306 within a transparent heater, such as transparent heater 175. The nanowire network has been found to be flexible and easy to print onto a base substrate, such as support 304. The nanowire network can also be very durable when exposed to high temperatures, such as those used during epitaxial deposition processes.

[0048] The electrode 306 is coupled to one or more leads 206 so that the electrode 306 has a positive terminal 302a and a negative terminal 302b. The positive terminal 302a and the negative terminal 302b are used to allow current to flow through the electrode 306 to heat the electrode 306. The positive terminal 302a can be maintained at a higher voltage than the negative terminal 302b. The positive terminal 302a and the negative terminal 302b are metal wires. One or more contacts can also be set on either side of the electrode 306.

[0049] The encapsulation layer 308 is disposed on the electrode 306 and is configured to separate the electrode 306 from the lower transmission window 110. The encapsulation layer 308 may be an adhesive or may be used as an adhesive to bond the transparent heater 175 to the lower transmission window 110. In some embodiments, the encapsulation layer 308 is a resin. The encapsulation layer 308 may be the same or similar material as the support base 304. Therefore, the support base 304 is a mica material, such as a white mica material or a fluorite mica. The mica material is flexible and can be heated to a high processing temperature without damaging the encapsulation layer 308. In some embodiments, commercially available materials such as Manufactured Glass or In another example, both the encapsulation layer 308 and the support base 304 are formed of glass, and the encapsulation layer 308 and the support base 304 are bonded to each other via an ozone plasma treatment. In some embodiments, it is contemplated that the encapsulation layer 308 may be omitted if the electrode 306 is compatible with the environmental process.

[0050] The encapsulation layer 308 is formed of an optically transparent material so that the encapsulation layer 308 has an optical transparency of greater than about 80% at a desired radiation wavelength, such as an optical transparency of greater than about 85%, such as an optical transparency of greater than about 90%, such as an optical transparency of greater than about 95%, such as an optical transparency of greater than about 97%, such as an optical transparency of greater than about 97%. The desired radiation wavelength is a wavelength emitted by one or more radiation sources in the deposition chamber 100. In some embodiments, the desired radiation wavelength is an infrared (IR) wavelength. In some embodiments, the desired radiation wavelength is less than about 5000 nm, such as about 300 nm to about 5000 nm, such as about 500 nm to about 3000 nm, such as about 500 nm to about 2500 nm, such as about 500 nm to about 2000 nm, such as about 500 nm to about 1500 nm, such as about 500 nm to about 1000 nm.

[0051] The encapsulation layer 308 is flexible and can be stretched in a similar manner as the support base 304. The electrode 306 has a Young's modulus of less than about 150 GPa, such as about 0.1 GPa to about 150 GPa, such as about 0.1 GPa to about 100 GPa, such as about 0.5 GPa to 75 GPa, such as about 1 GPa to about 50 GPa.

[0052] The encapsulation layer 308 electrically isolates the electrode 306 from the lower transmissive window 110. The encapsulation layer 308 is thermally conductive so that the heat generated by the electrode 306 can be quickly dissipated throughout the encapsulation layer 308 and reach the lower transmissive window 110. Having a high resistivity reduces the possibility of arcing or current leakage from the electrode 306. The resistivity of the encapsulation layer is about 10 10 Ωm or greater, such as about 10 12 Ωm or greater, such as about 10 14 Ωm or greater, such as about 10 15 The thermal conductivity is about 0.5 W / m K or more, such as about 3 W / m K or more, such as about 50 W / m K or more, such as about 100 W / m K or more. Having a higher thermal conductivity enables the temperature of a portion of the lower transmission window 110 to be adjusted more quickly.

[0053] The electrode 306 includes a first surface 310 and a second surface 316 opposite to the first surface 310. The packaging layer 308 is disposed on the first surface 310 so that the electrode contact surface 312 of the packaging layer 308 contacts the first surface 310. The electrode 306 is disposed on the support base 304 so that the second surface 316 of the electrode 306 contacts the support surface 314 of the support base 304.

[0054] In the embodiments described herein, the assembled transparent heater 304 has an optical transparency of greater than about 80% at a desired radiation wavelength, such as greater than about 85%, such as greater than about 90%, such as greater than about 95%, such as greater than about 97%, such as greater than about 99%. The desired radiation wavelength is less than about 5000nm, such as about 300nm to about 5000nm, such as about 500nm to about 3000nm, such as about 500nm to about 2500nm, such as about 500nm to about 2000nm, such as about 500nm to about 1500nm, such as about 500nm to about 1000nm.

[0055] FIG. 4A to FIG. 4D 17 is a schematic plan view of the configuration of each of the transparent heaters 175, 176, 177, and 178. Figure 4AAs shown in FIG. 1 , a single rectangular transparent heater 175 is disposed on the outer surface 172 of the lower transmissive window 110. Both the positive terminal 302a and the negative terminal 302b extend from the transparent heater 175 in the same direction. When the support base 304 and other components of the transparent heater 175 are flexible, or when the transparent heater 175 is disposed on a flat portion of the device, such as on one of the upper transmissive window 108 or the lower transmissive window 110, a transparent heater 175 may be used. Figure 4A Embodiment of the invention. Figure 4A The configuration of the transparent heater 175 shown in FIG. 1 may be similar to the transparent heater 176 used on the upper transmissive window 108 .

[0056] exist Figure 4B In the embodiment of the transparent heater 175, the transparent heater 175 is formed by a group 402 of a plurality of sub-heaters 404. The plurality of sub-heaters 404 may be rectangular in shape and may form a portion of the transparent heater 175. The plurality of sub-heaters 404 are similar in composition to the transparent heater 175. Figure 3 The transparent heater 175 is a single transparent heater 175. However, each of the transparent heaters 175 can be slightly actuated relative to each other so that the plurality of sub-heaters 404 can achieve a greater range of flexibility in the application of the transparent heater 175. The use of multiple sub-heaters 404 further enables the use of additional materials within the support seat 304, the electrode 306, and the encapsulation layer 308, because the material may be more rigid and less flexible. However, because one or more sub-heaters 404 can be oriented in different directions relative to other sub-heaters 404, the transparent heater 175 can be disposed on a curved surface, such as a curved portion of the upper transmission window 108 or the lower transmission window 110. Each of the sub-heaters 404 is electrically connected so that the power line is disposed through each of the sub-heaters 404 and each of the sub-heaters 404 is connected to the positive terminal 302a and the negative terminal 302b. The sub-heaters 404 can be connected in parallel or in series. In some embodiments, the sub-heaters 404 may be further grouped so that some sub-heaters 404 form a first heating zone while other sub-heaters 404 form a second heating zone corresponding to a portion of one of the upper transmission window 108 or the lower transmission window 110 that is different from the first heating zone.

[0057] exist Figure 4CIn an embodiment of the invention, the transparent heater 175 is a ring heater 410 or a plurality of ring heaters. The ring heater 410 is disposed on the lower transmission window 110. The ring heater 410 is disposed around the shaft opening 406 of the lower transmission window 110. The shaft 118 of the substrate support 106 is disposed inside the shaft opening 406. The ring heater 410 may be open at one end so that the ring heater 410 has a joint 411, and both ends of the ring heater 410 can be coupled and decoupled at the joint 411 when the ring heater 410 is mounted on the lower transmission window 110 or maintained. In some embodiments, the ring heater 410 slides on the hollow transmission member shaft 115 so that the joint 411 is not used. In an embodiment where the ring heater 410 is separated at the joint 411, the ring heater 410 is flexible so that the ring heater 410 can be opened at the joint 411 and placed around the hollow transmission member shaft 115.

[0058] Positive terminal 302a is provided at a first end of annular heater 410, and negative terminal 302b is provided at a second end of annular heater 410. Transparent heater 175 has an electrode such as electrode 306 provided through transparent heater 175 and connecting positive terminal 302a and negative terminal 302b.

[0059] In some embodiments, the annular heater 410 is divided into a plurality of annular heaters, the plurality of annular heaters including an inner annular heater and an outer annular heater. The inner annular heater is radially disposed inside the outer annular heater so that the inner annular heater is disposed inside the inner surface of the outer annular heater. Both the inner annular heater and the outer annular heater are disposed radially outside the shaft 118 of the substrate support 106.

[0060] exist Figure 4D In the embodiment of the present invention, the transparent heater 175 is similar to Figure 4C The embodiment of the present invention is shown in FIG. 1 , but the ring heater 410 is divided into a plurality of sub-heaters 412. The plurality of sub-heaters 412 are arranged to form a ring. Figure 4B 4. Each of the sub-heaters 412 is connected and can be adjusted to be in a different orientation relative to any of the other sub-heaters 412. In some embodiments, multiple sub-heaters 412 enable the use of less flexible or non-flexible materials within the transparent heater 175 while still conforming the transparent heater 175 to the shape of the object to which it is coupled, such as the lower transmissive window 110.

[0061] Figure 51 is a schematic plan view of a substrate transfer robot 500 having a transparent heater 175 disposed thereon. The transparent heater 175 is disposed on one or more blades 506 of the substrate transfer robot 500. The one or more blades 506 are part of a robot head 504. The robot head 504 is coupled to a robot arm 502. The robot arm 502 is configured to actuate the robot head 504 and a substrate supported on the blade 506 of the robot head 504. One or more leads 206 pass through the robot arm 502 or are disposed on the robot arm 502, and are coupled to the transparent heater 175. One or more transparent heaters 175 are disposed on each blade 506 of the substrate transfer robot 500, such as a plurality of transparent heaters 175 disposed on each of the blades 506.

[0062] The use of the transparent heater 175 with the substrate transfer robot 500 can reduce thermal shock when a substrate is placed on one of the blades 506 of the robot head 504. In some cases, a substrate may break or become damaged when a hot substrate contacts a cold blade, such as one of the blades 506. Heating the substrate transfer robot 500 with the transparent heater 175 can reduce substrate cooling time within the processing chamber and allow for faster substrate-blade relative motion while starting or stopping contact with the substrate.

[0063] The transparent heater 175 can be used in various semiconductor applications and various semiconductor devices. When the transparent heater 175 is applied to a chamber window, such as the upper transmission window 108, the lower transmission window 110, and the viewing port (not shown), the transparent heater 175 may be useful. Variations of the transparent heater 175 can also be applied to a substrate transfer arm or a cassette. It is also contemplated that the transparent heater 175 can be used with other optically transparent components within a semiconductor device chamber.

[0064] The use of a transparent heater, such as one of transparent heaters 175, 176, 177, 178, enables more precise and accurate regulation of component temperatures within a semiconductor processing chamber, such as a deposition chamber, such as an epitaxial deposition chamber. The flexibility of the transparent heater as described herein provides the ability to mold the transparent heater to a non-planar surface. Alternatively, multiple non-flexible transparent heaters are used and applied individually to the non-planar surface.

[0065] Transparent heaters can correct for local variations in temperature on transparent surfaces within semiconductor processing chambers. Local variations in temperature have been shown to form films on surfaces of components facing the substrate processing space. The films are formed from cold spots where additional deposition occurs and etch rates are lower.

[0066] The transparent heaters described herein enable more controlled heating while not blocking the field of view of the pyrometer or radiation from lamps disposed within the processing chamber.

[0067] While the foregoing is directed to various embodiments of the present invention, other and further embodiments of the present invention may be devised without departing from the basic scope thereof, and the scope of the present invention is determined by the following claims.

Claims

1. A heater assembly configured for use during semiconductor manufacturing, comprising: Chamber components; a transparent heater coupled to the chamber component and comprising: a support base; and The electrode is arranged on the support seat.

2. The heater assembly of claim 1, a cover layer disposed on a side of the electrode opposite the support base. The heater assembly of claim 2 , wherein the cover layer is bonded to the chamber component.

4. The heater assembly of claim 1, wherein the transparent heater has an optical transparency greater than about 80% at wavelengths less than about 5000 nm.

5. The heater assembly of claim 1, wherein the chamber component is optically transparent and comprises one of a lower transmissive window, an upper transmissive window, or a robotic arm.

6. The heater assembly of claim 5, wherein the chamber component is a lower transmissive window and further comprises: A hollow transmissive member shaft; The dome portion; and A neck portion connects the hollow transmissive member shaft to the dome portion.

7. The heater assembly of claim 5, wherein the chamber component is the upper transmissive window and further comprises: The dome portion; and A support ring is disposed around the dome portion.

8. The heater assembly of claim 1, wherein the chamber component is the robotic arm and the transparent heater is disposed on one or more blades of the robotic arm.

9. A heater assembly configured for use during semiconductor manufacturing, comprising: Transmission window; a transparent heater coupled to the transmission window and comprising: a support base; and The electrode is arranged on the support seat.

10. The heater assembly of claim 9, wherein the electrode is a heating element.

11. The heater assembly of claim 10, wherein the electrode has a power rating of about 100 W / m 2 About 5000W / m 2 Resistivity within the range of .

12. The heater assembly of claim 9, wherein the support base is a mica material.

13. The heater assembly of claim 12, wherein the mica material is one or a combination of muscovite or fluorite mica.

14. The heater assembly of claim 9, wherein the electrode is a metal nanowire network.

15. The heater assembly of claim 14, wherein a cover layer is disposed on the electrode.

16. The heater assembly of claim 15, wherein the cover layer is bonded to the transmissive window.

17. The heater assembly of claim 15, wherein the cover layer is coupled to the transmissive window using an adhesive.

18. A processing chamber configured for use during semiconductor processing, comprising: Chamber body; an upper transmission window, disposed within the chamber body; A lower transmission window is disposed inside the chamber body; A substrate support member, disposed between the upper transmission window and the lower transmission window; as well as A transparent heater is coupled to one of the upper transmission window or the lower transmission window.

19. The processing chamber of claim 18, wherein the transparent heater further comprises: Support seat; An electrode, disposed on the support seat; and A covering layer is disposed on the electrode.

20. The processing chamber of claim 19, wherein a controller is coupled to the transparent heater and the electrode is a heating element.

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