Semiconductor device processing method, system and equipment

Abstract

The invention discloses a semiconductor device processing method, system and equipment, and the method comprises the steps: grinding a workpiece at an original height after the workpiece is ground to a target thickness at two grinding mechanisms, and eliminating a sub-surface damage layer on the surface of the workpiece as far as possible, thereby reducing the microcracks on the surface of the workpiece, and improving the machining precision of the semiconductor device. And meanwhile, wafer buckling deformation caused by internal stress of the sub-surface damage layer is reduced, the warping condition of the wafer is reduced, and the probability of wafer cracking is reduced. Meanwhile, after cleaning, whether heating treatment is carried out or not is determined according to the warping condition by detecting the warping condition of the workpiece, the working efficiency can be effectively improved, and when the warping condition of the workpiece does not meet the requirement, internal stress is eliminated through heating, so that the working efficiency is improved. The warping condition is improved, and it can be effectively guaranteed that the warping condition of the workpiece meets the requirement of being transferred into a material box.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a semiconductor device processing method, system and processing equipment. Background Art

[0002] Thinning is an important process in the processing of semiconductor devices such as wafers. Therefore, various automated thinning equipment has been developed to achieve the corresponding purpose.

[0003] The patent document with application publication number CN115338717A discloses a multi-station thinning machine.

[0004] Since wafers are brittle materials, they may break and warp due to various reasons during thinning, especially when 12-inch wafers are thinned.

[0005] The fragmentation is mainly caused by the fact that the grinding wheel will produce a sub-surface damage layer on the surface of the wafer during grinding. The microcracks in the sub-surface damage layer will sharply reduce the critical strength of fragmentation. At the same time, after the wafer stage unloads the adsorption force, the internal stress of the sub-surface damage layer, the internal stress of other areas of the wafer, and the tension of the film (before thinning, a film will be attached to the back of the wafer) and other factors combine to cause the wafer to bend, further increasing the fragmentation rate.

[0006] Wafer warpage not only increases the fragmentation rate, but also affects the wafer adsorption, transfer and boxing operations. Therefore, it is very important to control wafer warpage during the thinning process.

[0007] The prior art with application publication number CN115763286A provides a method for detecting the warpage during grinding and improving the RIE etching speed accordingly.

[0008] This method cannot be used to control the warping problem during thinning by grinding. Summary of the invention

[0009] The purpose of the present invention is to solve the above problems existing in the prior art and to provide a semiconductor device processing method, system and processing equipment.

[0010] The purpose of the present invention is achieved through the following technical solutions: A semiconductor device processing method comprises the following steps: S1, transferring the wafer carrier with the workpiece fixed thereon to the first grinding mechanism for grinding, and measuring the thickness of the workpiece in real time through the thickness measuring structure of the first grinding mechanism; S2, when it is determined that the workpiece reaches the first target thickness, the grinding wheel of the first grinding mechanism is maintained at the current height and continues to grind for a first predetermined time, and then lifted and reset; S3, moving the wafer stage to the second grinding mechanism for grinding and measuring the thickness of the workpiece in real time through a thickness measuring structure at the second grinding mechanism; S4, when it is determined that the workpiece reaches the second target thickness, the grinding wheel of the second grinding mechanism is maintained at the current height and continues to grind for a second predetermined time, and then lifted and reset; S5, moving the wafer table to a loading and unloading position, and transferring the workpiece to a cleaning machine for cleaning by a transfer robot; S6, through the warping detection mechanism to detect the warping of the workpiece cleaning machine to complete the cleaning, if the warping of the workpiece meets the requirements, then execute S7, if the warping of the workpiece does not meet the requirements, then execute S8; S7, transferring the workpiece from the cleaning machine to the material box by a loading and unloading robot; S8, execute S6 after heat treating the workpiece.

[0011] Preferably, the rebound percentage of the film attached to the workpiece does not exceed 35%.

[0012] Preferably, the grinding wheel of the first grinding mechanism grinds according to a constant speed grinding process after coming into contact with the workpiece, and the grinding wheel of the second grinding mechanism grinds according to a constant force grinding process after coming into contact with the workpiece.

[0013] Preferably, during the grinding process, the internal grinding wheel coolant and / or the external cooling cleaning liquid are kept at a constant temperature and constant amount.

[0014] Preferably, the external cooling cleaning fluid is sprayed toward the entry point of the grinding wheel.

[0015] Preferably, in S6, the warping of the workpiece is detected by a laser interferometer, and the moving speed of the laser interferometer is between 1 mm / s and 5 mm / s.

[0016] Preferably, in S6, when the loading and unloading robot adsorbs the workpiece, its three adsorption force application points are evenly distributed around the axis of the workpiece, and the three adsorption force application points are located between the diameter of 190-196 mm.

[0017] Preferably, before tearing off the film on the workpiece, the workpiece is subjected to a heat treatment at 50-60°C.

[0018] Semiconductor device processing system, including: A first grinding unit is used to transfer the wafer carrier with the workpiece fixed thereon to the first grinding mechanism for grinding and to measure the thickness of the workpiece in real time through a thickness measuring structure at the first grinding mechanism; A first internal stress elimination unit is used to make the grinding wheel of the first grinding mechanism maintain the current height and continue grinding for a first predetermined time before lifting and resetting when it is determined that the workpiece reaches a first target thickness; A second grinding unit is used to move the wafer carrier to the second grinding mechanism for grinding and measure the thickness of the workpiece in real time through a thickness measuring structure at the second grinding mechanism; A second internal stress elimination unit is used to make the grinding wheel of the second grinding mechanism maintain the current height and continue grinding for a second predetermined time before lifting and resetting when it is determined that the workpiece reaches a second target thickness; A cleaning and transfer unit is used to move the wafer table to a loading and unloading position, and to transfer the workpiece to a cleaning machine for cleaning by a transfer robot; The warping detection and unloading unit is used to detect the warping condition of the workpiece that has been cleaned in the cleaning machine through a warping detection mechanism; if the warping condition meets the requirements, the workpiece is transferred from the cleaning machine to a material box through a loading and unloading robot; if the warping does not meet the requirements, the workpiece is heat treated and then transferred to the material box through a loading and unloading robot.

[0019] A semiconductor device processing device comprises a memory and a processor, wherein the memory stores a program executable by the processor, and when the program is executed, any of the semiconductor device processing methods described above is implemented.

[0020] The advantages of the technical solution of the present invention are mainly reflected in: After the workpiece is ground to the target thickness at two grinding mechanisms, the present invention continues to grind at the original height, which can eliminate the sub-surface damage layer on the workpiece surface as much as possible, thereby reducing the microcracks on the workpiece surface, and at the same time reducing the wafer warping deformation caused by the internal stress of the sub-surface damage layer, which is beneficial to reducing the warping of the wafer and reducing the probability of cracking. At the same time, after cleaning, by detecting the warping of the workpiece, it is determined whether to perform heating treatment according to the warping condition, which can effectively improve the work efficiency. When the warping condition of the workpiece does not meet the requirements, the internal stress is eliminated by heating to improve the warping condition, which can effectively ensure that the warping condition of the workpiece meets the requirements for transfer to the material box.

[0021] The present invention effectively reduces the internal stress of the workpiece during the thinning process and fully reduces the warping of the wafer by selecting a film and further designing the feed speed, grinding force, coolant flow, temperature and injection point at different grinding mechanisms during the grinding process.

[0022] The present invention can effectively ensure the adequacy of adsorption by designing the position of the adsorption force application point of the adsorption arm, while minimizing the bending of the workpiece due to gravity as much as possible, thereby ensuring the safety and stability of loading the workpiece into the material box.

[0023] The present invention heats the workpiece first during subsequent film tearing, which can further alleviate the warping caused by film tension and intracrystalline stress, and facilitates safe and reliable separation of the film from the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a top view of the thinning device of the present invention; Figure 2 is a schematic diagram of a cleaning machine of the present invention; Figure 3 It is a process schematic diagram of the method of the present invention; Figure 4 is a three-dimensional view of the liquid injection hole inside the main shaft of the present invention; Figure 5 It is a partial structural schematic diagram of the transfer robot of the present invention; Figure 6 is a partial schematic diagram of the adsorption arm of the present invention; Figure 7 It is a top view of the relative position between the adsorption arm and the workpiece when the adsorption arm of the present invention adsorbs the workpiece. DETAILED DESCRIPTION

[0025] The purpose, advantages and features of the present invention will be illustrated and explained by the non-limiting description of the following preferred embodiments. These embodiments are only typical examples of the application of the technical solution of the present invention, and any technical solution formed by equivalent replacement or equivalent transformation falls within the scope of protection claimed by the present invention.

[0026] In the description of the scheme, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience and simplification of description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0027] Example 1 The semiconductor device processing method disclosed by the present invention is described below in conjunction with the accompanying drawings. Figure 1As shown, the semiconductor device processing method is based on a thinning device. The specific structure of the thinning device can refer to the structure disclosed in the patent cited in the background technology. The difference from the existing thinning device is that: the present invention is also provided with a warping detection mechanism for detecting the warping of the workpiece A at the cleaning machine 100, and the warping detection mechanism includes a laser interferometer 200. The laser interferometer 200 is connected to a translation drive mechanism 300 for driving its translation. The translation drive mechanism 300 can drive the laser interferometer 200 to move in only one direction. Preferably, the translation drive mechanism 300 is arranged on a side of the cleaning machine away from the transfer robot, and the transfer robot is used to transport the workpiece from the wafer stage to the cleaning machine, and the translation drive mechanism 300 drives the laser interferometer 200 to move horizontally along a first direction X, and the first direction X is perpendicular to the second direction Y, and the second direction Y is the extension direction of the line connecting the centers of the table surfaces of the two wafer stages 600 located at the first grinding mechanism 400 and the second grinding mechanism 500 of the thinning device. Of course, in other embodiments, the translation driving mechanism 300 may also drive the laser interferometer 200 to move horizontally along the first direction X and the second direction Y.

[0028] At the same time, if attached Figure 2 As shown, in order to handle the wafer warpage in time when it is found that the wafer warpage does not meet the requirements, the thinning equipment also integrates a heating component 122 for heating the vacuum adsorption disk 121 for adsorbing the workpiece on the rotating adsorption table 120 at the cleaning machine 100. The rotating adsorption table 120 integrated with the heating component can adopt a known feasible structure. For example, the heating component 122 is a resistance wire, an electric heating rod, an electric heating film, etc. arranged at the bearing platform above the hollow rotating table. The bearing platform 123 is arranged on the hollow turntable 124 and the bearing platform 123 is connected to the external pipes and wires through the gas-electric integrated slip ring 125 corresponding to the center hole of the hollow turntable below it, so as to power the heating component and connect with the external pipe to realize vacuum extraction. The specific connection technology of the gas-electric integrated slip ring and its connection with the heating component, the gas path on the bearing platform and the external gas path and wires is a known technology and will not be described here. Correspondingly, the vacuum adsorption disk is preferably a ceramic suction cup with good thermal conductivity, such as an aluminum nitride ceramic suction cup and a silicon carbide ceramic suction cup.

[0029] In order to ensure the cleaning quality, the present invention further improves the structure of the cleaning machine 100. Figure 2As shown, like the prior art, the cleaning machine 100 includes a cleaning tank 110 and a rotating adsorption platform 120 disposed in the cleaning tank 110. The rotating adsorption platform 120 can adsorb the workpiece A thereon and drive it to rotate. The difference from the prior art cleaning machine 100 is that in this embodiment, the cleaning machine 100 also includes a top cover 130 connected to the top of the cleaning tank 110 and capable of automatically opening and closing relative to the cleaning tank 110. The specific structure of the top cover 130 capable of automatically opening and closing relative to the cleaning tank 110 is a known technology, which is not an innovation of the present invention and will not be elaborated here.

[0030] As attached Figure 2 As shown, the swing arm cleaning mechanism 140 is provided on the top cover 130, and correspondingly, the swing arm cleaning mechanism 140 may include a height adjustment device 141 located outside the top cover 130. The height adjustment device 141, for example, adopts a known servo module, and of course, it may also be other devices with the same specific functions. The servo module is connected to a rotary cylinder 142 and drives the rotary cylinder 142 to move up and down. The rotary cylinder 142 may also be replaced by a turntable, etc., and it may also be connected to a limit assembly 143 outside the top cover 130. Of course, the limit assembly 143 is not necessary and may be omitted. The turntable of the rotary cylinder 142 is connected to a rotating shaft 144 that is penetrated through the top cover 130 and can rotate and retract relative to the top cover 130. The top cover 130 may also be provided with a sealing sleeve and / or a shaft sleeve (not shown in the figure) that is sleeved on the periphery of the rotating shaft 144. One end of the rotating shaft 144 extending to the inner side of the top cover 130 is connected to a horizontal swing arm 145 , and a liquid nozzle 146 and a gas nozzle 147 are provided on the horizontal swing arm 145 .

[0031] Therefore, during cleaning, the height of the horizontal swing arm 145 can be adjusted according to the thickness of the semiconductor device after thinning, so that the liquid nozzle 146 and the gas nozzle 147 can maintain the same gap with the workpiece A of different thicknesses, so that uniform cleaning parameters can be used to ensure cleaning consistency.

[0032] Correspondingly, as attached Figure 3 As shown, the semiconductor device processing method includes the following steps: S1, transferring the wafer stage 600 with the workpiece A fixed thereon to the first grinding mechanism 400 for grinding, and measuring the thickness of the workpiece A in real time through the thickness measuring structure of the first grinding mechanism 400; S2, when it is determined that the workpiece A reaches the first target thickness, the grinding wheel of the first grinding mechanism 400 is maintained at the current height and continues to grind for a first predetermined time, and then lifted and reset; S3, moving the wafer stage 600 to the second grinding mechanism 500 for grinding and measuring the thickness of the workpiece A in real time through the thickness measuring structure of the second grinding mechanism 500; S4, when it is determined that the workpiece A reaches the first target thickness, the grinding wheel of the second grinding mechanism 500 is maintained at the current height and continues to grind for a second predetermined time before being lifted and reset; S5, moving the wafer stage 600 to the loading and unloading position, and transferring the workpiece A to the cleaning machine 100 for cleaning by the transfer robot 700; S6, through the warping detection mechanism to detect the cleaning machine 100 to complete the warping of the workpiece A, if the warping of the workpiece A meets the requirements, then execute S7, if the warping of the workpiece A does not meet the requirements, then execute S8; S7, transferring the workpiece A from the cleaning machine 100 to the material box 900 by the loading and unloading robot 800; S8, execute S6 after heat treating the workpiece A.

[0033] During thinning, a film is first pasted on the back of the chip to be ground as workpiece A, and then the thinning process of workpiece A is performed. During the processing, the thickness of the chip becomes smaller and smaller, and the stress and tension of the film itself cause the entire workpiece A to bend. Therefore, in order to reduce the force of the film, when pasting the film, a film with weaker rebound ability is selected for pasting. Preferably, the rebound percentage of the film does not exceed 35%.

[0034] The specific grinding process of the workpiece A at the first grinding mechanism 400 and the second grinding mechanism 500 can refer to the prior art. Preferably, in order to reduce the stress generated during the grinding process as much as possible, the grinding wheel of the first grinding mechanism 400 grinds according to a constant speed grinding process after contacting the workpiece A, and the grinding wheel of the second grinding mechanism 500 grinds using a constant force grinding process after contacting the workpiece A. The constant speed grinding means that the grinding wheel feeds the workpiece A at a fixed feed speed, for example, the grinding wheel feeds and grinds the workpiece A at a feed speed of 0.1-0.3 microns / second. The constant force grinding process is, for example, the method disclosed in the patent document with the authorization announcement number CN117415730B, which will not be described in detail here.

[0035] Furthermore, during the grinding process, the cooling of the grinding wheel and the workpiece A is also an important factor affecting the internal stress of the workpiece A. In order to avoid insufficient cooling causing overheating of the grinding wheel and the wafer, thereby causing the internal stress of the workpiece A to increase, during the grinding process, the internal grinding wheel coolant and / or the external cooling and cleaning liquid are kept at a constant temperature and constant amount. In specific implementation, the technology for achieving a constant temperature and constant amount of the coolant is a known technology and is not described in detail here. In this embodiment, as shown in the attached figure, Figure 4As shown, the internal grinding wheel coolant is sprayed from the top of the grinding wheel to the grinding wheel through the spray hole 002 inside the spindle of the first grinding mechanism 400 and the second grinding mechanism 500 to cool the grinding wheel. The external cooling cleaning liquid is sprayed from the bamboo tube outside the grinding wheel to the contact position between the grinding wheel and the workpiece A for flushing and cooling. The temperature of the internal grinding wheel coolant and the external cooling cleaning liquid is the same and controlled between 20-25°C. The flow rate of the internal grinding wheel coolant and the external cooling cleaning liquid is not less than 3 liters / minute.

[0036] Further, as attached Figure 1 As shown, in order to improve the cooling effect of the external cooling cleaning liquid, the external cooling cleaning liquid sprayed from the cleaning liquid nozzle 001 is sprayed toward the entry point of the grinding wheel and the axis of the cleaning liquid nozzle 001 passes through the entry point, i.e., the two points where the grinding wheel and the edge of the workpiece intersect. During the rotation of the grinding wheel, a point on the grinding wheel that has not contacted the workpiece passes through the point first, so that the external cooling cleaning liquid can be carried to the area between the grinding wheel and the workpiece A, so that the external cooling cleaning liquid can better cover the contact area between the grinding wheel and the workpiece A, thereby achieving cooling in a wider range.

[0037] In S2 and S4, the first predetermined time and the second predetermined time may be the same or different. Preferably, they are the same and between 8 and 15 seconds, preferably about 10 seconds. The reason for staying for this time is that the inventors have found that this can not only remove the sub-surface damage layer as much as possible, but also effectively avoid the problem of over-grinding of workpiece A causing the thickness of workpiece A to fail to meet the standard.

[0038] In S5, in order to prevent deformation of workpiece A from affecting the stable adsorption of the suction cup 710 of the transfer robot 700 when taking workpiece A from the wafer table 600, when the transfer robot 700 adsorbs, the adsorption of workpiece A by the wafer table 600 is stopped after it is determined that the suction cup 710 is in full contact with the workpiece A, and back-blowing is performed and the workpiece A is taken away from the wafer table 600. When determining whether the suction cup 710 is in full contact with the workpiece A, a first pressure sensor 750 can be set on the transfer robot 700 for detection. Specifically, as shown in the attached figure, Figure 5As shown, the suction cup 710 is connected to the rotating arm 720 through a guide shaft 730 that can move up and down relative to the rotating arm 720. A spring 740 and the first pressure sensor 750 are arranged between the suction cup 710 and the rotating arm 720. When the suction cup 710 just starts to contact with the workpiece A, the first pressure sensor 750 is not triggered. When the suction cup 710 continues to move downward, the suction cup 710 begins to be subjected to pressure, so that the first pressure sensor 750 begins to detect the pressure value. At this time, the downward movement of the suction cup 710 can be stopped immediately, and it is determined whether the vacuum degree of the suction cup 710 meets the requirements. If it meets the requirements, it is determined that the suction cup 710 adsorbs the workpiece A.

[0039] When the transfer robot 700 transfers the workpiece A to the vacuum adsorption plate of the cleaning machine 100, and also when the first pressure sensor 750 starts to generate a pressure value, the suction cup 710 immediately stops moving down. At this time, the suction cup 710 of the transfer robot 700 stops vacuuming, and the vacuum adsorption plate is vacuumed for adsorption. After determining that the vacuum degree of the vacuum adsorption plate meets the requirements, the suction cup 710 of the transfer robot 700 moves up and resets.

[0040] When cleaning at the cleaning machine 100 , the top surface of the workpiece A may be cleaned using a known method.

[0041] After cleaning is completed, the vacuum adsorption plate of the cleaning machine 100 stops adsorption. At this time, the warping condition of the workpiece A is detected by the laser interferometer 200.

[0042] In S6, it is preferred to drive the laser interferometer 200 to translate through the translation drive mechanism 300, and make the laser interferometer 200 move from one side edge of the workpiece A along a straight line through the center of the workpiece A to the edge of the other side of the workpiece A, then the vacuum adsorption plate adsorbs the workpiece A and drives the workpiece A to rotate 90°. After the rotation, the vacuum adsorption plate stops adsorption, and the translation drive mechanism 300 drives the laser interferometer 200 to move in the opposite direction and move from one side edge of the workpiece A to the other side edge of the workpiece A along a straight line again. The moving speed of the laser interferometer 200 is between 1 mm / s and 5 mm / s, preferably 1 mm / s, and the sampling frequency is between 50 milliseconds and 150 milliseconds. The data of the laser interferometer 200 during the two movements are obtained, and it is determined whether the maximum difference of the measured distance values ​​exceeds the threshold value. If so, it is determined that the warping condition of the workpiece A does not meet the requirements. If not, it is determined that the warping condition of the workpiece A meets the requirements. Of course, in other embodiments, the vacuum adsorption plate may also drive the workpiece A to rotate at multiple angles and perform detection.

[0043] In S7, when the loading and unloading robot 800 adsorbs the workpiece A, the vacuum adsorption plate can be made to maintain adsorption of the workpiece A first, and when it is determined that the three adsorption force points 811 on the adsorption arm 810 of the loading and unloading robot 800 are in contact with the workpiece A, the vacuum adsorption plate stops adsorbing the workpiece A. At this time, the vacuum adsorption arm starts adsorption and determines whether the vacuum degree of the adsorption arm meets the requirements. If the requirements are met, the vacuum adsorption arm moves to transfer the workpiece A. In specific implementation, as shown in the attached figure, Figure 6 As shown, the three adsorption force application points 811 on the adsorption arm 810 protrude from the lower surface of the adsorption arm and are made of soft materials. A second pressure sensor 820 is also provided on the lower surface of the adsorption arm, and the bottom of the detection point 821 of the second pressure sensor 820 is flush with the bottom of the adsorption force application point 811. Therefore, when the second pressure sensor 820 begins to detect pressure, it can be determined that the adsorption arm and the workpiece A are in full contact.

[0044] As attached Figure 7 As shown, when the loading and unloading robot 800 adsorbs the workpiece A, the three adsorption force points 811 of its adsorption arm are evenly distributed in a circle around the axis of the workpiece A. For a 12-inch wafer, the three adsorption force points 811 are located at a diameter between 190-196 mm, preferably around 192 mm, so as to overcome the deformation caused by gravity as much as possible.

[0045] In S8, the heating treatment is directly performed on the vacuum adsorption plate. During the specific heating, the vacuum adsorption plate adsorbs and fixes the workpiece A, and then performs the heat treatment at a temperature of 50-60°C. The treatment time can be determined according to specific needs, for example, between 5-15 minutes. After the heat treatment, the workpiece A is allowed to stand for 2-3 minutes and then the warping detection is performed again.

[0046] After thinning is completed, the film on the workpiece A needs to be torn off the wafer. When implementing this, it can be achieved through a film tearing machine. Specifically, after the material box 900 is filled with the thinned workpiece A, the material box 900 can be moved to the film tearing machine by known handling equipment, such as an overhead crane handling system or an AGV handling system. At the film tearing machine, the film can be torn off manually or automatically. Moreover, before tearing off the film, for the workpiece A that is determined to have a large warping during inspection, the workpiece A can be subjected to a heat treatment of 50-60°C on the workpiece carrier of the film tearing machine before the film is torn off.

[0047] Example 2 This embodiment discloses a semiconductor device processing system, including: A first grinding unit is used to transfer the wafer carrier 600 with the workpiece A fixed thereon to the first grinding mechanism 400 for grinding and to measure the thickness of the workpiece A in real time through the thickness measuring structure of the first grinding mechanism 400; A first internal stress elimination unit is used to make the grinding wheel of the first grinding mechanism 400 maintain the current height and continue grinding for a first predetermined time and then lift and reset when it is determined that the workpiece A reaches a first target thickness; A second grinding unit is used to move the wafer stage 600 to the second grinding mechanism 500 for grinding and measure the thickness of the workpiece A in real time through a thickness measuring structure at the second grinding mechanism 500; A second internal stress elimination unit is used to make the grinding wheel of the second grinding mechanism 500 maintain the current height and continue grinding for a second predetermined time before lifting and resetting when it is determined that the workpiece A reaches the first target thickness; A cleaning and transfer unit is used to move the wafer table 600 to a loading and unloading position, and to transfer the workpiece A to the cleaning machine 100 for cleaning by means of a transfer robot 700; A warpage detection unit, used to detect the warpage of the workpiece A that has been cleaned at the cleaning machine 100 through a warpage detection mechanism, and if the warpage of the workpiece A meets the requirements, communicate with the unloading unit, and if the warpage of the workpiece A does not meet the requirements, communicate with the heat treatment unit; A material unloading unit, used to transfer the workpiece A from the cleaning machine 100 to the material box 900 through the unloading and loading robot 800; The heat treatment unit is used to communicate with the warping detection unit after heat treatment of the workpiece A.

[0048] Example 3 This embodiment discloses a semiconductor device processing equipment, including a memory and a processor, wherein the memory stores a program executable by the processor, and when the program is executed, the semiconductor device processing method as described above is implemented.

[0049] There are many implementation methods of the present invention, and all technical solutions formed by equivalent transformation or equivalent transformation fall within the protection scope of the present invention.

Claims

1. A semiconductor device processing method, characterized in that: The steps include: S1, transferring the wafer carrier with the workpiece fixed thereon to the first grinding mechanism for grinding, and measuring the thickness of the workpiece in real time through the thickness measuring structure of the first grinding mechanism; S2, when it is determined that the workpiece reaches the first target thickness, the grinding wheel of the first grinding mechanism is maintained at the current height and continues to grind for a first predetermined time, and then lifted and reset; S3, moving the wafer stage to the second grinding mechanism for grinding and measuring the thickness of the workpiece in real time through a thickness measuring structure at the second grinding mechanism; S4, when it is determined that the workpiece reaches the second target thickness, the grinding wheel of the second grinding mechanism is maintained at the current height and continues to grind for a second predetermined time, and then lifted and reset; S5, moving the wafer table to a loading and unloading position, and transferring the workpiece to a cleaning machine for cleaning by a transfer robot; S6, through the warping detection mechanism to detect the warping of the workpiece cleaning machine to complete the cleaning, if the warping of the workpiece meets the requirements, then execute S7, if the warping of the workpiece does not meet the requirements, then execute S8; S7, transferring the workpiece from the cleaning machine to the material box by a loading and unloading robot; S8, execute S6 after heat treating the workpiece.

2. The semiconductor device processing method according to claim 1, characterized in that: The rebound percentage of the film attached to the workpiece does not exceed 35%.

3. The semiconductor device processing method according to claim 1, characterized in that: The grinding wheel of the first grinding mechanism grinds according to a constant speed grinding process after contacting the workpiece, and the grinding wheel of the second grinding mechanism grinds according to a constant force grinding process after contacting the workpiece.

4. The semiconductor device processing method according to claim 1, characterized in that: During the grinding process, the internal grinding wheel coolant and / or the external cooling cleaning fluid are kept at a constant temperature and volume.

5. The semiconductor device processing method according to claim 4, characterized in that: The external cooling cleaning fluid is sprayed toward the entry point of the grinding wheel.

6. The semiconductor device processing method according to claim 1, characterized in that: In S6, the warping of the workpiece is detected by a laser interferometer, and the moving speed of the laser interferometer is between 1 mm / s and 5 mm / s.

7. The semiconductor device processing method according to claim 1, characterized in that: In S6, when the loading and unloading robot adsorbs the workpiece, its three adsorption force application points are evenly distributed around the axis of the workpiece, and the three adsorption force application points are located between the diameter of 190-196 mm.

8. The semiconductor device processing method according to any one of claims 1 to 7, characterized in that: Before tearing off the film on the workpiece, the workpiece is subjected to a heat treatment at 50-60°C.

9. A semiconductor device processing system, characterized in that: include: A first grinding unit is used to transfer the wafer carrier with the workpiece fixed thereon to the first grinding mechanism for grinding and to measure the thickness of the workpiece in real time through a thickness measuring structure at the first grinding mechanism; A first internal stress elimination unit is used to make the grinding wheel of the first grinding mechanism maintain the current height and continue grinding for a first predetermined time before lifting and resetting when it is determined that the workpiece reaches a first target thickness; A second grinding unit is used to move the wafer carrier to the second grinding mechanism for grinding and measure the thickness of the workpiece in real time through a thickness measuring structure at the second grinding mechanism; A second internal stress elimination unit is used to make the grinding wheel of the second grinding mechanism maintain the current height and continue grinding for a second predetermined time before lifting and resetting when it is determined that the workpiece reaches a second target thickness; A warpage detection unit, used to detect the warpage of the workpiece cleaned by the cleaning machine through a warpage detection mechanism, and if the warpage of the workpiece meets the requirements, communicate with the unloading unit, and if the warpage of the workpiece does not meet the requirements, communicate with the heat treatment unit; A material unloading unit, used for transferring the workpiece from the cleaning machine to the material box through a loading and unloading robot; The heat treatment unit is used to communicate with the warping detection unit after heat treatment of the workpiece.

10. A processing device comprising a memory and a processor, wherein the memory stores a program executable by the processor, wherein: When the program is executed, the semiconductor device processing method according to any one of claims 1 to 8 is implemented.

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