Deposition device and deposition equipment

Abstract

The invention relates to the technical field of semiconductors or photovoltaics, in particular to a deposition device and deposition equipment, and aims at solving the problems that the deposition equipment is large in occupied area and low in productivity. In the deposition device, the upper part of the process chamber accommodates the upper end of the carrier plate, and the lower part of the process chamber accommodates the lower end of the carrier plate, so that the carrier plate can be in a vertical state in the process chamber, the size of the process chamber in the first direction is relatively small, and the occupied area of the deposition device is reduced. Moreover, the carrier plate can be in a vertical state in the process chamber, so that the first side and the second side of the carrier plate can stably bear the substrates, and the gas uniformizing assembly can provide the process gas to the two sides of the carrier plate, so that the deposition device can process the substrates on the two sides of the carrier plate at the same time, and the productivity of the deposition device is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor or photovoltaic technology, and in particular to a deposition device and a deposition equipment. Background Art

[0002] In the semiconductor or photovoltaic industry, deposition equipment is a key tool for performing thin film deposition processes to form thin films on substrates.

[0003] However, existing deposition equipment is horizontal, and when the carrier carries the substrate in the process chamber of the deposition equipment for processing, the carrier is in a horizontal state. This deposition equipment occupies a large area, and during the process, the carrier can only use the upward side to carry the substrate, and the production capacity of the deposition equipment is low. Summary of the invention

[0004] In view of this, an embodiment of the present application provides a deposition device and a deposition equipment to solve the problem that the deposition equipment occupies a large area and has low production capacity.

[0005] In a first aspect, an embodiment of the present application provides a deposition device, comprising: a process chamber, the process chamber having a process chamber, the process chamber being configured to accommodate at least one carrier, the upper portion of the process chamber and the lower portion of the process chamber being arranged relative to each other along a first direction, the upper portion of the process chamber being configured to accommodate the upper end of the carrier, and the lower portion of the process chamber being configured to accommodate the lower end of the carrier, wherein the first side of the carrier and the second side of the carrier are arranged relative to each other, the first side of the carrier and the second side of the carrier each having at least one bearing area, and the bearing area is used to place a substrate; a gas homogenizing component, arranged in the process chamber, and configured to provide process gas to the first side of the carrier and the second side of the carrier; and a gas extraction component, arranged in the process chamber and relative to the gas homogenizing component along the first direction, for extracting the process gas in the process chamber.

[0006] In combination with the first aspect, in certain implementations of the first aspect, the air uniforming component has a plurality of air uniforming holes, and the air uniforming holes are arranged toward the air pumping component.

[0007] In combination with the first aspect, in certain implementations of the first aspect, the gas equalizing assembly has a first gas equalizing portion and a second gas equalizing portion arranged at intervals along a second direction, the second direction is perpendicular to the first direction, at least a portion of the carrier can be arranged in the interval between the first gas equalizing portion and the second gas equalizing portion, the first gas equalizing portion is configured to provide process gas to a first side of the carrier, and the second gas equalizing portion is configured to provide process gas to a second side of the carrier.

[0008] In combination with the first aspect, in some implementations of the first aspect, the carrier can move in a process chamber along a third direction, and the third direction is perpendicular to the first direction and the second direction; wherein the deposition device also includes: a first guide component, arranged in the process chamber, for guiding the movement of the upper end of the carrier along the third direction; wherein the gas uniformity component is arranged in the upper part of the process chamber, and the gas uniformity component includes: a first sub-gas uniformity component, forming a first gas uniformity portion, and having a plurality of first gas uniformity holes, the first gas uniformity holes are located below the first guide component, and when the carrier is placed in the process chamber, the first gas uniformity holes are located above the bearing area of ​​the first side of the carrier, and are configured to provide process gas to the first side of the carrier; a second sub-gas uniformity component, forming a second gas uniformity portion, and having a plurality of second gas uniformity holes, the second gas uniformity holes are located below the first guide component, and when the carrier is placed in the process chamber, the second gas uniformity holes are located above the bearing area of ​​the second side of the carrier, and are configured to provide process gas to the second side of the carrier.

[0009] In combination with the first aspect, in certain implementations of the first aspect, the exhaust assembly is arranged at the lower part of the process chamber, and the exhaust assembly has a first exhaust section, a second exhaust section and a first connecting section, the first exhaust section and the second exhaust section are spaced apart along the second direction, and the first connecting section connects the first exhaust section and the second exhaust section, wherein, when the carrier is placed in the process chamber, the first connecting section is located below the lower end of the carrier, the first exhaust section is located on the first side of the carrier, and the second exhaust section is located on the second side of the carrier.

[0010] In combination with the first aspect, in certain implementations of the first aspect, the exhaust assembly has a plurality of first through holes, and the deposition device further includes: a plurality of connecting shafts, the connecting shafts being arranged in the process chamber, the first ends of the connecting shafts passing through the first through holes; a plurality of first guide wheels, arranged at intervals along a third direction, the plurality of first guide wheels being respectively mounted on the first ends of the plurality of connecting shafts, and the first guide wheels being used to guide the movement of the lower end of the carrier along the third direction.

[0011] In combination with the first aspect, in some implementations of the first aspect, the process chamber has a first side wall and a second side wall arranged opposite to each other along a second direction, and when the carrier is placed in the process chamber, the carrier is located between the first side wall and the second side wall; wherein, the first side wall has at least one first protrusion on the side facing the second side wall, and the orthographic projection of the first protrusion on the carrier can at least cover at least one bearing area on the first side of the carrier, and the first protrusion, the first gas equalizing portion and the first gas extraction portion can form a first sub-chamber with the first side of the carrier; and / or, the second side wall has at least one second protrusion on the side facing the first side wall, and the orthographic projection of the second protrusion on the carrier can at least cover at least one bearing area on the second side of the carrier, and the second protrusion, the second gas equalizing portion and the second gas extraction portion can form a second sub-chamber with the second side of the carrier.

[0012] In combination with the first aspect, in certain implementations of the first aspect, when the first side wall has at least one first protrusion, the deposition device further includes: a first flow focusing member extending along a third direction, the first flow focusing member having a first connecting port and a first port relatively arranged along the first direction, the first connecting port being connected to a plurality of first air-distributing holes, and a flow area of ​​the first port being smaller than a flow area of ​​the first connecting port, and the first port extending into the first sub-chamber; and / or, when the second side wall has at least one second protrusion, the deposition device further includes: a second flow focusing member extending along the third direction, the second flow focusing member having a second connecting port and a second port relatively arranged along the first direction, the second connecting port being connected to a plurality of second air-distributing holes, and a flow area of ​​the second port being smaller than a flow area of ​​the second connecting port, and the second port extending into the second sub-chamber.

[0013] In combination with the first aspect, in certain implementations of the first aspect, when the first sidewall has at least one first protrusion, the deposition device further includes: two first baffles, which are arranged on the first protrusion, are arranged opposite to each other along a third direction, and are located on a side of the first protrusion facing the first sub-chamber, and the two first baffles are configured to slow down the outflow rate of the process gas in the first sub-chamber; and / or when the second sidewall has at least one second protrusion, the deposition device further includes: two second baffles, which are arranged on the second protrusion, are arranged opposite to each other along a third direction, and are located on a side of the second protrusion facing the second sub-chamber, and the two second baffles are configured to slow down the outflow rate of the process gas in the second sub-chamber.

[0014] In combination with the first aspect, in some implementations of the first aspect, the process chamber has an opening, and the opening is used for allowing the carrier to enter and exit the process chamber.

[0015] In a second aspect, an embodiment of the present application provides a deposition device, comprising: at least one carrier, a first side of the carrier and a second side of the carrier are arranged opposite to each other, the first side of the carrier and the second side of the carrier each have at least one carrying area, and the carrying area is used to set a substrate; the deposition device mentioned in any one of the first aspects has a process chamber, and the process chamber is configured to accommodate at least one carrier.

[0016] In the deposition device provided in this embodiment, the upper part of the process chamber and the lower part of the process chamber are arranged relative to each other along the first direction, the upper part of the process chamber is configured to accommodate the upper end of the carrier, and the lower part of the process chamber is configured to accommodate the lower end of the carrier, so that the carrier can be in an upright state in the process chamber, and the size of the process chamber in the first direction is small, thereby reducing the footprint of the deposition device. Under the same footprint, the number of deposition devices can be set more relative to the horizontal device. In addition, since the carrier can be in an upright state in the process chamber, the first side and the second side of the carrier can both stably carry the substrate, and since the gas homogenizing component can provide process gas to both sides of the carrier, the deposition device can simultaneously process the substrates on both sides of the carrier, thereby improving the production capacity of the deposition device.

[0017] In addition, the gas uniformization component and the exhaust component are arranged relative to each other along the first direction, which further reduces the footprint of the deposition device. This arrangement makes it unnecessary for the process gas to go around to the other side of the carrier and then be extracted by the exhaust component, thereby reducing the obstruction of the process gas flow, helping to increase the gas flow speed and improve the deposition efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] By describing the embodiments of the present application in more detail in conjunction with the accompanying drawings, the above and other purposes, features and advantages of the present application will become more apparent. The accompanying drawings are used to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application. In the accompanying drawings, the same reference numerals generally represent the same components or steps.

[0019] Figure 1 Shown is a schematic structural diagram of a deposition device provided in one embodiment of the present application.

[0020] Figure 2 Shown is a schematic structural diagram of a deposition device provided in another embodiment of the present application.

[0021] Figure 3 Shown is a right side view of a deposition device provided in one embodiment of the present application.

[0022] Figure 4 Shown is a schematic structural diagram of a deposition device provided in yet another embodiment of the present application.

[0023] Figure 5 The present invention provides an embodiment of the present invention. Figure 4 A partial enlarged view of point A in the middle.

[0024] Figure 6 The present invention provides an embodiment of the present invention. Figure 5 A partial enlarged view of point B in the middle.

[0025] Figure 7The present invention provides an embodiment of the present invention. Figure 5 A partial enlarged view of point C in the middle.

[0026] Figure 8 Shown is a schematic structural diagram of a carrier board provided in one embodiment of the present application.

[0027] Fig. 9 The figure shows a schematic diagram of the structure of a gas homogenizing component, a first flow focusing component and a second flow focusing component provided in one embodiment of the present application.

[0028] Fig.10 The figure shows a schematic structural diagram of a first sub-gas homogenizing component and a first flow focusing element provided in one embodiment of the present application.

[0029] Fig.11 The figure shows an exploded view of the first sub-gas uniforming component and the first flow focusing member provided in one embodiment of the present application.

[0030] Fig.12 The present invention provides an embodiment of the present invention. Fig.11 A partial enlarged view of point D in the middle.

[0031] Fig.13 Shown is a schematic structural diagram of an air extraction assembly provided in one embodiment of the present application.

[0032] Fig.14 Shown is a schematic structural diagram of a second guide assembly and a cut-open air extraction assembly provided in one embodiment of the present application.

[0033] Reference numerals:

[0034] 1. Deposition equipment; 10. Deposition device; 11. Process chamber; 110. Process chamber; 111. Opening; 112. Blocking plate; 113. First side wall; 1130. First protrusion; 1131. First chamber door; 114. Second side wall; 1140. Second protrusion; 115. First sub-chamber; 116. Second sub-chamber; 12. Gas equalizing assembly; 120. Gas equalizing hole; 121. First gas equalizing section; 122. Second gas equalizing section; 123. First sub-gas equalizing assembly; 1230. First gas equalizing hole ; 1231, first gas-uniform pipeline; 1232, first gas-uniform box; 1233, first gas-uniform plate; 1234, third through hole; 124, second sub-gas-uniform assembly; 13, air-exhaust assembly; 130, air-exhaust hole; 131, first air-exhaust part; 132, second air-exhaust part; 133, first connecting part; 134, first through hole; 14, first guide assembly; 140, magnetic member; 15, second guide assembly; 150, connecting shaft; 1500, first end of connecting shaft; 1501, second end of connecting shaft;

[0035] 151, first guide wheel; 16, first flow focusing member; 160, first communication port; 161, first port;

[0036] 162, first accommodating space; 17, second flow focusing member; 170, second port; 18, first baffle;

[0037] 19. second baffle; 20. carrier; 21. upper end of carrier; 22. lower end of carrier; 23. first side of carrier; 24. second side of carrier; 25. bearing area; 30. gas supply device; 40. vacuum device; 50. gas purification device; 60. drive assembly; X1. first direction; X2. second direction;

[0038] X3, third direction. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0040] Figure 1 Shown is a schematic structural diagram of a deposition device provided in one embodiment of the present application. Figure 2 Shown is a schematic structural diagram of a deposition device provided in another embodiment of the present application. Figure 3 Shown is a right side view of a deposition device provided in one embodiment of the present application. Figure 4 Shown is a schematic structural diagram of a deposition device provided in yet another embodiment of the present application. Figure 5 The present invention provides an embodiment of the present invention. Figure 4 A partial enlarged view of point A in the middle. Figure 6 The present invention provides an embodiment of the present invention. Figure 5 A partial enlarged view of point B in the middle. Figure 7 The present invention provides an embodiment of the present invention. Figure 5 A partial enlarged view of point C in the middle. Figure 8 FIG. 1 is a schematic diagram of the structure of a carrier provided in an embodiment of the present application. Figures 1 to 8 As shown, the deposition device 10 includes a process chamber 11 , a gas homogenizing component 12 and a gas extraction component 13 .

[0041] The process chamber 11 has a process chamber 110. The process chamber 110 is configured to accommodate at least one carrier 20. The upper portion of the process chamber 110 and the lower portion of the process chamber 110 are arranged opposite to each other along a first direction X1. The upper portion of the process chamber 110 is configured to accommodate an upper end 21 of the carrier. The lower portion of the process chamber 110 is configured to accommodate a lower end 22 of the carrier. The first side 23 of the carrier and the second side 24 of the carrier are arranged opposite to each other. The first side 23 of the carrier and the second side 24 of the carrier each have at least one carrying area 25. The carrying area 25 is used to place a substrate (not shown in the figure).

[0042] The gas homogenizing assembly 12 is disposed in the process chamber 11 and is configured to provide process gas to the first side 23 of the carrier and the second side 24 of the carrier. The gas extraction assembly 13 is disposed in the process chamber 11 and is disposed opposite to the gas homogenizing assembly 12 along the first direction X1, and is used to extract the process gas in the process chamber 110.

[0043] The substrate can be any sheet material that needs to be coated. Exemplarily, the substrate can include at least one of a silicon wafer, a battery cell, a wafer and a glass plate. Specifically, the carrier 20 is used as a carrier to carry the substrate. The deposition device 10 is used to perform a deposition process on the substrate carried by the carrier 20. Exemplarily, the deposition device 10 can be used to perform a physical vapor deposition process or a chemical vapor deposition process. Exemplarily, the deposition device 10 can be used to perform an atomic layer deposition (ALD) process.

[0044] The process chamber 110 is used to accommodate at least one carrier 20. When the carrier 20 carries a substrate for processing in the process chamber 110, the upper end 21 of the carrier is located at the upper part of the process chamber 110, and the lower end 22 of the carrier is located at the lower part of the process chamber 110, and the carrier 20 is in an upright state in the process chamber 110. The first side 23 of the carrier and the second side 24 of the carrier are both provided with a carrying area 25, so that the carrier 20 can carry at least two substrates. The side of the substrate to be deposited faces away from the carrier 20. The gas homogenizing component 12 can simultaneously provide process gas to the first side 23 of the carrier and the second side 24 of the carrier, so as to perform a deposition process on the substrates carried on both sides of the carrier 20. The exhaust component 13, which is arranged opposite to the gas uniforming component 12 along the first direction X1, extracts the process gas from the process chamber 110, so that the process gas can flow from the gas uniforming component 12 through the first side 23 of the carrier and the second side 24 of the carrier and flow to the exhaust component 13, so that the process gas can cover the first side 23 of the carrier and the second side 24 of the carrier, and the substrates on both sides of the carrier 20 can be deposited at the same time.

[0045] For example, the gas homogenizing assembly 12 may be further configured to alternately provide process gas and cleaning gas to both the first side 23 and the second side 24 of the carrier simultaneously. The cleaning gas is used to clean the gas homogenizing assembly 12 and the process chamber 110. The cleaning gas may include an inert gas, such as nitrogen.

[0046] Specifically, when the carrier 20 is placed in the process chamber 110, the upper end 21 of the carrier and the lower end 22 of the carrier are arranged relative to each other along the first direction X1. Exemplarily, the first direction X1 may be a vertical direction. Exemplarily, the gas equalizing component 12 may be arranged at the upper part of the process chamber 110, and the gas extraction component 13 may be arranged at the lower part of the process chamber 110. Exemplarily, the gas equalizing component 12 may be arranged at the lower part of the process chamber 110, and the gas extraction component 13 may be arranged at the upper part of the process chamber 110. Exemplarily, the extension direction of the gas equalizing component 12 is parallel to the extension direction of the gas extraction component 13. Exemplarily, when the carrier 20 is placed in the process chamber 110, the extension direction of the gas equalizing component 12 is parallel to the extension direction of the upper end 21 of the carrier, and the extension direction of the gas extraction component 13 is parallel to the extension direction of the lower end 22 of the carrier.

[0047] Exemplarily, the first side 23 of the carrier may connect the upper end 21 of the carrier and the lower end 22 of the carrier. The second side 24 of the carrier may connect the upper end 21 of the carrier and the lower end 22 of the carrier. In some embodiments, the process chamber 11 may be connected to the upper end 21 of the carrier and the lower end 22 of the carrier to fix the carrier 20 in the process chamber 110. In other embodiments, the carrier 20 can move relative to the process chamber 11.

[0048] Specifically, the first side 23 of the carrier and the second side 24 of the carrier may each have one or more carrying areas 25. The carrying area 25 may be set based on the area of ​​the first side 23 of the carrier or the second side 24 of the carrier corresponding to the carrying area 25 and the area of ​​the side to be deposited of the substrate. Figure 1 and Figure 8 As shown, the first side 23 of the carrier may have four bearing areas 25. The second side 24 of the carrier may also have four bearing areas 25.

[0049] For example, the process chamber 110 may be configured to accommodate a plurality of carriers 20. The plurality of carriers 20 are arranged at intervals, and both sides of each carrier 20 may carry substrates.

[0050] In the deposition device 10 provided in this embodiment, the upper part of the process chamber 110 and the lower part of the process chamber 110 are arranged relative to each other along the first direction X1, the upper part of the process chamber 110 is configured to accommodate the upper end 21 of the carrier, and the lower part of the process chamber 110 is configured to accommodate the lower end 22 of the carrier, so that the carrier 20 can be in an upright state in the process chamber 110, and the size of the process chamber 11 in the first direction X1 is small, thereby reducing the footprint of the deposition device 10. Under the same footprint, the number of deposition devices 10 can be set more relative to the horizontal device. In addition, since the carrier 20 can be in an upright state in the process chamber 110, the first side 23 of the carrier and the second side 24 of the carrier can both stably carry the substrate, and since the gas homogenizing component 12 can provide process gas to both sides of the carrier 20, the deposition device 10 can process the substrates on both sides of the carrier 20 at the same time, thereby improving the production capacity of the deposition device 10.

[0051] In addition, the gas homogenizing assembly 12 and the gas extraction assembly 13 are arranged opposite to each other along the first direction X1, which further reduces the floor space of the deposition device 10.

[0052] In some application scenarios, in a horizontal deposition device, the carrier is placed horizontally, the substrate is located on the upper side of the carrier, the gas equalization device is arranged above the carrier, the gas extraction device is arranged below the carrier, and the process gas is blown toward the substrate in a direction perpendicular to the substrate. In this embodiment, the gas equalization component 12 and the gas extraction component 13 are arranged relative to each other along the first direction X1, so that the process gas does not need to go around to the other side of the carrier 20 and then be extracted by the gas extraction component 13, which reduces the obstruction of the process gas flow, helps to increase the gas flow speed, and improves the deposition efficiency.

[0053] Fig. 9 The figure shows a schematic diagram of the structure of a gas homogenizing component, a first flow focusing component and a second flow focusing component provided in one embodiment of the present application. Fig.10 The figure shows a schematic structural diagram of a first sub-gas homogenizing component and a first flow focusing element provided in one embodiment of the present application. Fig.11 The figure shows an exploded view of the first sub-gas uniforming component and the first flow focusing member provided in one embodiment of the present application. Fig.12 The present invention provides an embodiment of the present invention. Fig.11 A partial enlarged view of point D in the middle. Fig.13 Shown is a schematic structural diagram of an air extraction assembly provided in one embodiment of the present application.

[0054] Fig.14 Shown is a schematic structural diagram of a second guide assembly and a cut-open air extraction assembly provided in one embodiment of the present application.

[0055] In the above-mentioned horizontal deposition equipment, the process gas is blown toward the substrate in a direction perpendicular to the substrate, which may cause turbulent air flow in the chamber and poor uniformity of the coating. Figures 8 to 12As shown, the gas uniformity component 12 has a plurality of gas uniformity holes 120, and the gas uniformity holes 120 are arranged toward the gas extraction component 13. This arrangement makes the flow direction of the process gas parallel to the first direction X1, and the process gas is mainly distributed in a laminar flow in the process chamber 110 during the process, and the process gas can flow uniformly from one end of the carrier 20 to the other end of the carrier 20, for example, from the upper end 21 of the carrier to the lower end 22 of the carrier, which is conducive to improving the uniformity of the thin film deposited on the substrate.

[0056] For example, the multiple gas-leveling holes 120 on the gas-leveling component 12 may be of the same size or of different sizes. The multiple gas-leveling holes 120 may be evenly arranged or not evenly arranged. For example, when the carrier 20 is placed in the process chamber 110, the multiple gas-leveling holes 120 are respectively located on the first side 23 of the carrier and the second side 24 of the carrier.

[0057] For example, Fig.13 and Fig.14 As shown, the exhaust assembly 13 has a plurality of exhaust holes 130. The exhaust holes 130 are arranged toward the uniform air holes 120. Exemplarily, the uniform air holes 120 and the exhaust holes 130 are arranged correspondingly. Exemplarily, the plurality of exhaust holes 130 may be of the same size or of different sizes. The plurality of exhaust holes 130 may be evenly arranged or may not be evenly arranged. Exemplarily, when the carrier 20 is placed in the process chamber 110, the plurality of exhaust holes 130 are respectively located on the first side 23 of the carrier and the second side 24 of the carrier.

[0058] In some embodiments, Figure 5 and Figure 6 As shown, the gas homogenizing assembly 12 has a first gas homogenizing portion 121 and a second gas homogenizing portion 122 arranged at intervals along a second direction X2. The second direction X2 is perpendicular to the first direction X1. At least a portion of the carrier 20 can be arranged in the interval between the first gas homogenizing portion 121 and the second gas homogenizing portion 122. The first gas homogenizing portion 121 is configured to provide process gas to the first side 23 of the carrier, and the second gas homogenizing portion 122 is configured to provide process gas to the second side 24 of the carrier.

[0059] Since there is a gap between the first gas equalizing section 121 and the second gas equalizing section 122, the carrier 20 can be arranged in the gap, so that the gas equalizing component 12 can extend to the bearing area 25 of the first side 23 of the carrier and the bearing area 25 of the second side 24 of the carrier, so that the first gas equalizing section 121 can be closer to the bearing area 25 of the first side 23 of the carrier, and the second gas equalizing section 122 can be closer to the bearing area 25 of the second side 24 of the carrier, thereby reducing the flow path of the process gas and improving the deposition efficiency.

[0060] Specifically, when the carrier 20 is placed in the process chamber 110, the first side 23 of the carrier and the second side 24 of the carrier are arranged opposite to each other along the second direction X2. The interval between the first gas uniformizing portion 121 and the second gas uniformizing portion 122 is used to arrange at least a portion of the carrier 20. For example, Figure 6 As shown, the gas homogenizing assembly 12 can be disposed at the upper portion of the process chamber 110, and the interval between the first gas homogenizing portion 121 and the second gas homogenizing portion 122 can be used to dispose the upper end 21 of the carrier. In other examples, the gas homogenizing assembly 12 can be disposed at the lower portion of the process chamber 110, and the interval between the first gas homogenizing portion 121 and the second gas homogenizing portion 122 can be used to dispose the lower end 22 of the carrier.

[0061] Exemplarily, the first gas homogenizing section 121 and the second gas homogenizing section 122 both have gas homogenizing holes 120. The gas homogenizing holes 120 are arranged toward the gas extraction assembly 13. Exemplarily, the first gas homogenizing section 121 can be configured to alternately provide process gas and cleaning gas to the first side 23 of the carrier, and the second gas homogenizing section 122 is configured to alternately provide process gas and cleaning gas to the second side 24 of the carrier.

[0062] Exemplarily, a ratio of a size of the process chamber 11 along the first direction X1 to a size of the process chamber 11 along the second direction X2 is greater than or equal to 2. Exemplarily, the shape of the process chamber 11 may include a cuboid.

[0063] In some embodiments, Figures 1 to 8 As shown, the carrier 20 can move along the third direction X3 in the process chamber 110, and the third direction X3 is perpendicular to the first direction X1 and the second direction X2. Specifically, when the carrier 20 is placed in the process chamber 110, the upper end 21 and the lower end 22 of the carrier both extend along the third direction X3.

[0064] The deposition device 10 further includes a first guide assembly 14. The first guide assembly 14 is disposed in the process chamber 11. The first guide assembly 14 is used to guide the movement of the upper end 21 of the carrier along the third direction X3. For example, the first guide assembly 14 may include second guide wheels disposed at intervals along the third direction X3. For example, Figure 6 As shown, the upper end 21 of the carrier may be magnetic. The first guide assembly 14 includes two magnetic members 140 spaced apart along the second direction X2. The two magnetic members 140 have the same magnetic properties and are the same or different from the magnetic properties of the upper end 21 of the carrier. When the carrier 20 is placed in the process chamber 110, the upper end 21 of the carrier is located between the two magnetic members 140.

[0065] In some embodiments, Figure 5 , Figure 6 as well as Figures 9 to 12As shown, the gas homogenizing assembly 12 is disposed at the upper portion of the process chamber 110. The gas homogenizing assembly 12 includes: a first sub-gas homogenizing assembly 123 and a second sub-gas homogenizing assembly 124.

[0066] The first sub-gas homogenizing assembly 123 forms the first gas homogenizing portion 121 and has a plurality of first gas homogenizing holes 1230. The first gas homogenizing holes 1230 are located below the first guide assembly 14. When the carrier 20 is placed in the process chamber 110, the first gas homogenizing holes 1230 are located above the carrying area 25 of the first side 23 of the carrier. The first gas homogenizing holes 1230 are configured to provide process gas to the first side 124 of the carrier.

[0067] The second sub-gas homogenizing assembly 124 forms a second gas homogenizing portion 122 and has a plurality of second gas homogenizing holes (not shown in the figure). The second gas homogenizing holes are located below the first guide assembly 14. When the carrier 20 is placed in the process chamber 110, the second gas homogenizing holes are located above the carrying area 25 of the second side 24 of the carrier. The second gas homogenizing holes are configured to provide process gas to the second side 24 of the carrier.

[0068] The gas leveling component 12 is arranged at the upper part of the process chamber 110, which is conducive to the downward flow of the process gas. The upper end 21 of the carrier is accommodated in the upper part of the process chamber 110, and the first guide component 14 is used to guide the movement of the upper end 21 of the carrier along the third direction X3. Since the gas leveling component 12 can be composed of two sub-gas leveling components, namely the first sub-gas leveling component 123 and the second sub-gas leveling component 124, the first gas leveling hole 1230 and the second gas leveling hole are located below the first guide component 14, when the first gas leveling hole 1230 and the second gas leveling hole blow air to both sides of the carrier 20, the influence of the first guide component 14 on the flow of the process gas can be avoided, the air flow turbulence can be avoided, and the deposition uniformity can be improved. In addition, such a setting can reduce the distance between the first gas leveling hole 1230 and the second gas leveling hole and the exhaust component 13, respectively, reduce the flow path of the process gas, and improve the deposition efficiency.

[0069] Specifically, the first sub-gas equalizing component 123 and the second sub-gas equalizing component 124 are arranged at intervals along the second direction X2. The interval between the first sub-gas equalizing component 123 and the second sub-gas equalizing component 124 is used to set the carrier 20. Exemplarily, when the carrier 20 is placed in the process chamber 110, the first sub-gas equalizing component 123 is located on the first side 23 of the carrier, and the second sub-gas equalizing component 124 is located on the second side 24 of the carrier. Exemplarily, as described above, the first guide component 14 includes two magnetic members 140 arranged at intervals along the second direction X2. When the carrier 20 is placed in the process chamber 110, the upper end 21 of the carrier passes through the interval between the first sub-gas equalizing component 123 and the second sub-gas equalizing component 124, and extends between the two magnetic members 140.

[0070] For example, Fig. 9 As shown, the gas uniformizing component 12 extends along the third direction X3. The first sub-gas uniformizing component 123 and the second sub-gas uniformizing component 124 both extend along the third direction X3. Exemplarily, the gas uniformizing hole 120 includes a first gas uniformizing hole 1230 and a second gas uniformizing hole. Exemplarily, the first sub-gas uniformizing component 123 and the second sub-gas uniformizing component 124 are both located below the first guide component 14. Exemplarily, the first guide component 14 is connected to the top of the process chamber 110, and the first sub-gas uniformizing component 123 and the second sub-gas uniformizing component 124 can be arranged on the first guide component 14 and are both connected to the first guide component 14. Such an arrangement can simplify the connection between the gas uniformizing component 12 and the process chamber 11.

[0071] For example, Fig.10 and Fig.11 As shown, the first sub-gas equalizing component 123 includes a first gas equalizing pipeline 1231 and a first gas equalizing box 1232. The first gas equalizing pipeline 1231 has a first gas equalizing hole 1230 at one end facing the gas extraction component 13. The first gas equalizing box 1232 accommodates at least one end of the first gas equalizing pipeline 1231 facing the gas extraction component 13, and the first gas equalizing box 1232 has a plurality of second through holes (not shown in the figure) on the side facing the gas extraction component 13. The plurality of second through holes are connected to the first gas equalizing hole 1230, and are used to blow the process gas in the first gas equalizing hole 1230 toward the first side 23 of the carrier. Exemplarily, the first sub-gas equalizing component 123 also includes a first gas equalizing plate 1233. The first gas equalizing plate 1233 is arranged in the first gas equalizing box 1232, located on the side of the first gas equalizing hole 1230 facing the gas extraction component 13, and has a plurality of third through holes 1234. By providing the first gas homogenizing plate 1233 , the process gas can be homogenized multiple times, so that the distribution of the process gas is more uniform.

[0072] Exemplarily, the second sub-gas equalizing component 124 includes a second gas equalizing pipeline and a second gas equalizing box. The second gas equalizing pipeline has a second gas equalizing hole at one end facing the exhaust component 13. The second gas equalizing box accommodates at least one end of the second gas equalizing pipeline facing the exhaust component 13, and the second gas equalizing box has a plurality of fourth through holes on the side facing the exhaust component 13. The plurality of fourth through holes are connected to the second gas equalizing holes, and are used to blow the process gas in the second gas equalizing holes toward the second side 24 of the carrier. Exemplarily, the second sub-gas equalizing component also includes a second gas equalizing plate. The second gas equalizing plate is arranged in the second gas equalizing box, located on the side of the second gas equalizing hole facing the exhaust component 13, and has a plurality of fifth through holes. By arranging the second gas equalizing plate, the process gas can be equalized multiple times, so that the distribution of the process gas is more uniform.

[0073] In some embodiments, the deposition apparatus 1 includes a process chamber and a plurality of other chambers. The other chambers may be a pre-processing chamber, a post-processing chamber, a buffer chamber, etc. The carrier 20 may be moved between the process chamber and the plurality of other chambers.

[0074] In some embodiments, the process chamber 11 has two openings, which are arranged opposite to each other. One opening is used for the carrier 20 to enter the process chamber 110 , and the other opening is used for the carrier 20 to leave the process chamber 110 .

[0075] In other embodiments, Figure 1 As shown, the process chamber 11 has an opening 111. The opening 111 is used for the carrier 20 to enter and exit the process chamber 110. This arrangement allows the carrier 20 to enter and leave the process chamber 110 by only providing one opening 111, which is beneficial to improving the sealing of the process chamber 110. Exemplarily, the deposition device 10 is applied to the deposition device 1. The deposition device 1 also includes a valve cavity (not shown in the figure), which is arranged on a side of the process chamber 11 with the opening 111. A valve is provided in the valve cavity, and the valve is used to open or seal the opening 111. Exemplarily, the process chamber 11 has a blocking plate 112, and the opening 111 is arranged on the blocking plate 112. The blocking plate 112 is used to reduce the overflow of process gas and reduce the space of the process chamber 110.

[0076] In some embodiments, Figure 5 , Figure 7 and Fig.13 As shown, the exhaust assembly 13 is disposed at the lower part of the process chamber 110. The exhaust assembly 13 has a first exhaust portion 131, a second exhaust portion 132 and a first connecting portion 133. The first exhaust portion 131 and the second exhaust portion 132 are arranged at intervals along the second direction X2, and the first connecting portion 133 connects the first exhaust portion 131 and the second exhaust portion 132. When the carrier 20 is placed in the process chamber 110, the first connecting portion 133 is located below the lower end 22 of the carrier, the first exhaust portion 131 is located at the first side 23 of the carrier, and the second exhaust portion 132 is located at the second side 24 of the carrier.

[0077] The exhaust assembly 13 is disposed at the lower part of the process chamber 110, so that the exhaust assembly 13 can fully exhaust the space at the lower part of the process chamber 110, thereby improving the exhaust efficiency. The space surrounded by the first exhaust section 131, the second exhaust section 132 and the first connecting section 133 is used to accommodate the lower end 22 of the carrier. When the carrier 20 is placed in the process chamber 110, the first connecting section 133 is located below the lower end 22 of the carrier, the first exhaust section 131 is located on the first side 23 of the carrier, and the second exhaust section 132 is located on the second side 24 of the carrier. This arrangement allows the first exhaust section 131 and the second exhaust section 132 to be closer to the lower part of the bearing area 25 of the carrier 20, thereby reducing the flow path of the process gas and improving the deposition efficiency.

[0078] For example, Fig.13 and Fig.14As shown, the exhaust component 13 extends along the third direction X3. Exemplarily, the first exhaust section 131 and the second exhaust section 132 both extend along the third direction X3. Exemplarily, the first exhaust section 131 and the second exhaust section 132 are both provided with a plurality of exhaust holes 130. Exemplarily, the exhaust holes 130 of the first exhaust section 131 and the exhaust holes 130 of the second exhaust section 132 are both oriented toward the uniform gas component 12. Exemplarily, when the carrier 20 is placed in the process chamber 110, the exhaust holes 130 of the first exhaust section 131 are located below the bearing area 25 of the first side 23 of the carrier, and the exhaust holes 130 of the second exhaust section 132 are located below the bearing area 25 of the second side 24 of the carrier. Exemplarily, the first connecting portion 133 also has a plurality of exhaust holes 130 on the side facing the carrier 20.

[0079] In some embodiments, Figure 5 , Figure 7 and Fig.14 As shown, the deposition device 10 further includes a second guide assembly 15. The second guide assembly 15 is disposed in the process chamber 11, and is used to guide the movement of the lower end 22 of the carrier along the third direction X3. The first guide assembly 14 guides the movement of the upper end 21 of the carrier along the third direction X3, and the second guide assembly 15 guides the movement of the lower end 22 of the carrier along the third direction X3, so that the carrier 20 can move more smoothly, and avoid the carrier 20 from hitting the process chamber 11, so that the process chamber 110 can be set smaller, the deposition efficiency is improved, and the floor space occupied by the deposition device 10 is reduced.

[0080] In some embodiments, Figure 7 , Fig.13 and Fig.14 As shown, the exhaust assembly 13 has a plurality of first through holes 134. The deposition device 10 also includes: a plurality of connecting shafts 150 and a plurality of first guide wheels 151. The plurality of connecting shafts 150 are disposed in the process chamber 11, and the first ends 1500 of the connecting shafts pass through the first through holes 134. The plurality of first guide wheels 151 are arranged at intervals along the third direction X3. The plurality of first guide wheels 151 are respectively mounted on the first ends 1500 of the plurality of connecting shafts. The first guide wheels 151 are used to guide the movement of the lower end 22 of the carrier along the third direction X3.

[0081] By setting a plurality of connecting shafts 150 and a plurality of first guide wheels 151, the movement of the lower end 22 of the carrier plate along the third direction X3 can be guided. The exhaust assembly 13 has a plurality of first through holes 134 for the first ends 1500 of the connecting shafts to pass through, and the first guide wheels 151 mounted on the first ends 1500 of the connecting shafts guide the lower end 22 of the carrier plate. This arrangement can avoid interference between the exhaust assembly 13 and the connecting shafts 150 and the first guide wheels 151, so that the exhaust assembly 13 can be set relatively high and closer to the uniform gas assembly 12, which is conducive to reducing the size of the process chamber 11 along the first direction X1, and reducing the flow path of the process gas, thereby improving the deposition efficiency.

[0082] For example, Fig.14 As shown, the interior of the air extraction component 13 is a hollow structure. The first end 1500 of the connecting shaft and the first guide wheel 151 are located in the internal space of the air extraction component 13. Exemplarily, a plurality of connecting shafts 150 and a plurality of first guide wheels 151 are used to form the second guide component 15. Exemplarily, the first guide wheel 151 can be a V-shaped guide wheel.

[0083] In some embodiments, the first guide wheel 151 is also used to drive the carrier 20 to move along the third direction X3. The deposition device 10 also includes a driving assembly 60. The driving assembly 60 is connected to the second end 1501 of the connecting shaft to drive the first guide wheel 151 to rotate, so that the first guide wheel 151 drives the carrier 20 to move by friction.

[0084] In some embodiments, Figures 5 to 7 As shown, the process chamber 11 has a first side wall 113 and a second side wall 114 disposed opposite to each other along the second direction X2. When the carrier 20 is placed in the process chamber 110, the carrier 20 is located between the first side wall 113 and the second side wall 114.

[0085] Exemplarily, the first side wall 113, the first gas equalizing portion 121 and the first gas extraction portion 131 can form a first sub-chamber 115 with the first side 23 of the carrier. The first sub-chamber 115 can be used as a space for processing a substrate located on the first side 23 of the carrier. Exemplarily, the second side wall 114, the second gas equalizing portion 122 and the second gas extraction portion 132 can form a second sub-chamber 116 with the second side 24 of the carrier. The second sub-chamber 116 can be used as a space for processing a substrate located on the second side 24 of the carrier. Exemplarily, the process chamber 11 has a plurality of pairs of first side walls 113 and second side walls 114 arranged opposite to each other along the second direction X2. The carrier 20 can be arranged on each pair of first side walls 113 and second side walls 114.

[0086] In some embodiments, Figures 5 to 7As shown, the first side wall 113 has at least one first protrusion 1130 on the side facing the second side wall 114, and the orthographic projection of the first protrusion 1130 on the carrier 20 can at least cover at least one bearing area 25 of the first side 23 of the carrier. The first protrusion 1130, the first air homogenizing portion 121, and the first air extraction portion 131 can form a first sub-chamber 115 with the first side 23 of the carrier.

[0087] By arranging the first protrusion 1130 on the side of the first side wall 113 facing the second side wall 114, and the orthographic projection of the first protrusion 1130 on the carrier 20 can at least cover at least one bearing area 25 of the first side 23 of the carrier, so that in the bearing area 25, the distance between the first protrusion 1130 and the first side 23 of the carrier is small, the volume of the first sub-chamber 115 can be designed to be smaller, which is beneficial to reducing the amount of process gas used. In a smaller space, the process gas can more quickly contact the substrate carried by the first side 23 of the carrier, thereby improving the deposition efficiency.

[0088] Exemplarily, the first side 23 of the carrier has a plurality of bearing areas 25, and the first side wall 113 facing the second side wall 114 may have a plurality of first protrusions 1130, and the first protrusions 1130 correspond to the bearing areas 25 one by one. Figure 1 As shown, the first side 23 of the carrier has a plurality of bearing areas 25, and the first side wall 113 may have a first protrusion 1130 on the side facing the second side wall 114, and the orthographic projection of the first protrusion 1130 on the carrier 20 can cover the plurality of bearing areas 25 on the first side 23 of the carrier. This arrangement is conducive to the process gas flowing smoothly through the surface of the first protrusion 1130, and the first protrusion 1130 is also easy to clean.

[0089] Exemplarily, the first raised portion 1130 may be a hollow structure. Exemplarily, the first raised portion 1130 may be formed by splicing a plurality of plates, and the plurality of plates may enclose a hollow structure. Exemplarily, a heating assembly (not shown) may also be provided inside the first raised portion 1130, and the heating assembly is configured to heat the substrate carried by the first side 23 of the carrier. This arrangement makes the heating assembly less likely to be contaminated by the process gas, and the structure of the deposition device 10 is more compact, reducing the footprint.

[0090] Exemplarily, a portion of the first sidewall 113 forms a first chamber door 1131. Exemplarily, the first chamber door 1131 has at least one first protrusion 1130. This facilitates opening the first chamber door 1131 and cleaning the thin film deposited on the first protrusion 1130.

[0091] In some embodiments, Figure 5 and Figure 8As shown, the second side wall 114 has at least one second protrusion 1140 on one side facing the first side wall 113, and the orthographic projection of the second protrusion 1140 on the carrier 20 can at least cover at least one bearing area 25 of the second side 24 of the carrier. The second protrusion 1140, the second air homogenizing portion 122, and the second air extraction portion 132 can form a second sub-chamber 116 with the second side 24 of the carrier.

[0092] By arranging a second protrusion 1140 on the side of the second side wall 114 facing the first side wall 113, and the orthographic projection of the second protrusion 1140 on the carrier 20 can at least cover at least one bearing area 25 of the second side 24 of the carrier, so that in the bearing area 25, the distance between the second protrusion 1140 and the second side 24 of the carrier is small, the volume of the second sub-chamber 116 can be designed to be smaller, which is beneficial to reducing the amount of process gas used. In a smaller space, the process gas can more quickly contact the substrate carried by the second side 24 of the carrier, thereby improving the deposition efficiency.

[0093] Exemplarily, the second side 24 of the carrier has a plurality of bearing areas 25, and the second side wall 114 facing the first side wall 113 may have a plurality of second protrusions 1140, and the second protrusions 1140 correspond to the bearing areas 25 one by one. Figure 5 and Figure 8 As shown, the second side 24 of the carrier has a plurality of bearing areas 25, and the second side wall 114 may have a second protrusion 1140 on the side facing the first side wall 113, and the orthographic projection of the second protrusion 1140 on the carrier 20 can cover the plurality of bearing areas 25 on the second side 24 of the carrier. This arrangement is conducive to the process gas flowing smoothly through the surface of the second protrusion 1140, and the second protrusion 1140 is also easy to clean.

[0094] Exemplarily, the second raised portion 1140 may be a hollow structure. Exemplarily, the second raised portion 1140 may be formed by splicing a plurality of plates, and the plurality of plates may enclose a hollow structure. Exemplarily, a heating assembly (not shown) may also be provided inside the second raised portion 1140, and the heating assembly is configured to heat the substrate carried by the second side 24 of the carrier. This arrangement makes the heating assembly less likely to be contaminated by the process gas, and the structure of the deposition device 10 is more compact, reducing the footprint.

[0095] Exemplarily, a portion of the second sidewall 114 forms a second chamber door (not shown). Exemplarily, the second chamber door has at least one second protrusion 1140. This makes it easy to open the second chamber door and clean the film deposited on the second protrusion 1140.

[0096] For example, the first sub-chamber 115 and the second sub-chamber 116 may not be a closed space. For example, the first sub-chamber 115 and the second sub-chamber 116 may be connected. For example, the first sub-chamber 115 and the second sub-chamber 116 may both be connected to the process chamber 110.

[0097] In some embodiments, Figure 6 as well as Figures 9 to 11 As shown, in the case where the first side wall 113 has at least one first protrusion 1130, the deposition device 10 further includes a first flow focusing member 16. The first flow focusing member 16 extends along the third direction X3. The first flow focusing member 16 has a first connecting port 160 and a first port 161 that are arranged opposite to each other along the first direction X1. The first connecting port 160 is connected to a plurality of first gas-uniform holes 1230, and the flow area of ​​the first port 161 is smaller than the flow area of ​​the first connecting port 160. The first port 161 extends into the first sub-chamber 115.

[0098] The first sub-gas equalizing component 123 is usually composed of a gas equalizing pipeline. Due to the diameter and arrangement of the gas equalizing pipeline, the size of the first sub-gas equalizing component 123 along the second direction is usually 4 cm to 8 cm when it is designed to be small. By setting the first flow concentrator 16, the process gas flowing out of the first gas equalizing hole 1230 can be concentrated to the first sub-chamber 115, so that the distance between the first protrusion 1130 and the first side 23 of the carrier can be designed to be small, and the volume of the first sub-chamber 115 can also be small, which is conducive to reducing the amount of process gas used. In a smaller space, the process gas can more quickly contact the substrate carried by the first side 23 of the carrier, thereby improving the deposition efficiency.

[0099] For example, Figure 6 As shown, the first port 161 can extend between the first protrusion 1130 and the first side 23 of the carrier. Fig.11 As shown, the first flow concentrator 16 has a first accommodating space 162 for accommodating at least part of the first sub-gas homogenizing assembly 123. The first flow concentrator 16 is provided with a first communication port 160 and a first port 161 in the direction from the first accommodating space 162 toward the gas extraction assembly 13.

[0100] In some embodiments, Figure 6 and Fig. 9As shown, in the case where the second side wall 114 has at least one second protrusion 1140, the deposition device 10 further includes a second flow focusing member 17. The second flow focusing member 17 extends along the third direction X3. The second flow focusing member 17 has a second connecting port (not shown in the figure) and a second port 170 that are arranged opposite to each other along the first direction X1. The second connecting port is connected to a plurality of second uniform gas holes, and the flow area of ​​the second port 170 is smaller than the flow area of ​​the second connecting port. The second port 170 extends into the second sub-chamber 116.

[0101] Similarly, by providing a second flow focusing member 17, the process gas flowing out of the second uniform gas hole can be focused to the second sub-chamber 116, so that the distance between the second protrusion 1140 and the second side 24 of the carrier can be designed to be smaller, and the volume of the second sub-chamber 116 can also be smaller, which is beneficial to reducing the amount of process gas used. In a smaller space, the process gas can more quickly contact the substrate carried by the second side 24 of the carrier, thereby improving the deposition efficiency.

[0102] For example, Figure 6 As shown, the second port 170 can extend between the second protrusion 1140 and the second side 24 of the carrier. Exemplarily, the second flow focusing member 17 has a second accommodating space (not shown in the figure), and the second accommodating space is used to accommodate at least part of the second sub-gas homogenizing component 124. The second flow focusing member 17 is provided with a second communication port and a second port 170 in sequence in the direction of the second accommodating space toward the gas extraction component 13.

[0103] In some embodiments, Figure 1 and Figure 6 As shown, in the case where the first sidewall 113 has at least one first protrusion 1130, the deposition device 10 further includes two first baffles 18. The two first baffles 18 are disposed on the first protrusion 1130, are disposed opposite to each other along the third direction X3, and are located on the side of the first protrusion 1130 facing the first sub-chamber 115. The two first baffles 18 are configured to slow down the outflow speed of the process gas in the first sub-chamber 115.

[0104] By arranging two first baffles 18 on the first protrusion 1130, relatively arranged along the third direction X3, and located on the side of the first protrusion 1130 facing the first sub-chamber 115, the two first baffles 18 can prevent the process gas from flowing out of the first sub-chamber 115 along the third direction X3, thereby slowing down the outflow speed of the process gas in the first sub-chamber 115, which is beneficial to reducing the amount of process gas used, allowing the process gas to remain in the first sub-chamber 115 more during the process, which is beneficial to improving the deposition efficiency.

[0105] Exemplarily, the two first baffles 18 extend along the first direction X1. Exemplarily, the two first baffles 18 are respectively arranged on opposite sides of the first protrusion 1130 along the third direction X3. The two first baffles 18, the first protrusion 1130, the first gas homogenizing portion 121 and the first gas extraction portion 131 can form a first sub-chamber 115 with the first side 23 of the carrier. This arrangement further reduces the volume of the first sub-chamber 115, which is conducive to further reducing the amount of process gas used and improving deposition efficiency.

[0106] In some embodiments, Figure 6 As shown, in the case where the second sidewall 114 has at least one second protrusion 1140, the deposition device 10 further includes two second baffles 19. The two second baffles 19 are disposed on the second protrusion 1140, are disposed opposite to each other along the third direction X3, and are located on the side of the second protrusion 1140 facing the second sub-chamber 116. The two second baffles 19 are configured to slow down the outflow speed of the process gas in the second sub-chamber 116.

[0107] By arranging two second baffles 19 on the second protrusion 1140, relatively arranged along the third direction X3, and located on the side of the second protrusion 1140 facing the second sub-chamber 116, the two second baffles 19 can prevent the process gas from flowing out of the second sub-chamber 116 along the third direction X3, thereby slowing down the outflow speed of the process gas in the second sub-chamber 116, which is beneficial to reducing the amount of process gas used, allowing the process gas to remain in the second sub-chamber 116 more during the process, which is beneficial to improving the deposition efficiency.

[0108] Exemplarily, the two second baffles 19 extend along the first direction X1. Exemplarily, the two second baffles 19 are respectively arranged on both sides of the second protrusion 1140 along the third direction X3. The two second baffles 19, the second protrusion 1140, the second gas homogenizing portion 122 and the second gas extraction portion 132 can form a second sub-chamber 116 with the second side 24 of the carrier. This arrangement further reduces the volume of the second sub-chamber 116, which is conducive to further reducing the amount of process gas used and improving deposition efficiency.

[0109] The above describes in detail the embodiment of the deposition device 10 of the present application, and the following describes in detail the embodiment of the deposition device 1 of the present application. It should be understood that the description of the embodiment of the deposition device 10 corresponds to the description of the embodiment of the deposition device 1, and therefore, the parts not described in detail can refer to the above embodiment of the deposition device 10.

[0110] like Figure 5 and Figure 6 As shown, the deposition equipment 1 includes: at least one carrier plate 20 and the deposition device 10 mentioned in any of the above embodiments.

[0111] The first side 23 of the carrier and the second side 24 of the carrier are arranged opposite to each other. The first side 23 of the carrier and the second side 24 of the carrier each have at least one carrying area 25, and the carrying area 25 is used to place the substrate. The deposition device 10 has a process chamber 110, and the process chamber 110 is configured to accommodate at least one carrier 20.

[0112] Exemplarily, the deposition device 1 may further include a gas supply device 30. The gas supply device 30 is connected to the gas uniforming component 12 of the deposition device 10, and is used to provide process gas to the gas uniforming component 12. Exemplarily, the deposition device 1 may further include a vacuum device 40 and a gas purification device 50. The vacuum device 40 is connected to the gas extraction component 13 of the deposition device 10, and is used to provide suction force for the gas extraction component 13. Exemplarily, the gas purification device 50 is arranged between the gas extraction component 13 and the vacuum device 40, and is connected to the gas extraction component 13 and the vacuum device 40, and is used to purify the gas extracted from the process chamber.

[0113] In the deposition device 1 provided in this embodiment, the upper part of the process chamber 110 and the lower part of the process chamber 110 are arranged relative to each other along the first direction X1, the upper part of the process chamber 110 is configured to accommodate the upper end 21 of the carrier, and the lower part of the process chamber 110 is configured to accommodate the lower end 22 of the carrier, so that the carrier 20 can be in an upright state in the process chamber 110, and the size of the process chamber 11 in the first direction X1 is small, thereby reducing the footprint of the deposition device 10. Under the same footprint, the number of deposition devices 10 can be set more relative to the horizontal device. In addition, since the carrier 20 can be in an upright state in the process chamber 110, the first side 23 of the carrier and the second side 24 of the carrier can both stably carry the substrate, and since the gas homogenizing component 12 can provide process gas to both sides of the carrier 20, the deposition device 10 can process the substrates on both sides of the carrier 20 at the same time, thereby improving the production capacity of the deposition device 10.

[0114] In addition, the gas homogenizing component 12 and the exhaust component 13 are arranged relative to each other along the first direction X1, which further reduces the footprint of the deposition device 10. This arrangement makes it unnecessary for the process gas to go around to the other side of the carrier 20 and then be extracted by the exhaust component 13, thereby reducing the obstruction of the process gas flow, helping to increase the gas flow speed and improve the deposition efficiency.

[0115] The basic principles of the present application are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present application are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present application. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, not for limitation, and the above details do not limit the present application to being implemented by adopting the above specific details.

[0116] The block diagrams of the devices, apparatuses, equipment, and systems involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagrams. As will be appreciated by those skilled in the art, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "provided with", "having", etc. are open words, referring to "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used here refer to the words "and / or" and can be used interchangeably with them, unless the context clearly indicates otherwise. The word "such as" used here refers to the phrase "such as but not limited to", and can be used interchangeably with it.

[0117] It should also be noted that in the apparatus, device and method of the present application, each component or each step can be decomposed and / or recombined. Such decomposition and / or recombination should be regarded as equivalent solutions of the present application.

[0118] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0119] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims

1. A deposition device, characterized in that: include: A process chamber, wherein the process chamber has a process chamber, the process chamber is configured to accommodate at least one carrier, the upper portion of the process chamber and the lower portion of the process chamber are arranged opposite to each other along a first direction, the upper portion of the process chamber is configured to accommodate the upper end of the carrier, and the lower portion of the process chamber is configured to accommodate the lower end of the carrier, wherein the first side of the carrier and the second side of the carrier are arranged opposite to each other, and the first side of the carrier and the second side of the carrier each have at least one carrying area, and the carrying area is used to place a substrate; A gas homogenizing component, disposed in the process chamber, configured to provide process gas to the first side of the carrier and the second side of the carrier; The gas extraction component is arranged in the process chamber and is arranged opposite to the gas homogenizing component along the first direction, and is used to extract the process gas in the process chamber.

2. The deposition device according to claim 1, characterized in that: The gas uniformizing component has a plurality of gas uniformizing holes, and the gas uniformizing holes are arranged toward the gas extraction component.

3. The deposition device according to claim 1, characterized in that: The gas equalizing component comprises a first gas equalizing portion and a second gas equalizing portion which are spaced apart along a second direction, wherein the second direction is perpendicular to the first direction, and at least a portion of the carrier can be arranged in the interval between the first gas equalizing portion and the second gas equalizing portion, wherein the first gas equalizing portion is configured to provide the process gas to a first side of the carrier, and the second gas equalizing portion is configured to provide the process gas to a second side of the carrier.

4. The deposition device according to claim 3, characterized in that: The carrier plate is movable in the process chamber along a third direction, wherein the third direction is perpendicular to the first direction and the second direction; The process chamber has an opening, and the opening is used for the carrier to enter and exit the process chamber; Wherein, the deposition device also includes: a first guide assembly, disposed in the process chamber, for guiding the movement of the upper end of the carrier along the third direction; Wherein, the gas uniformizing component is arranged at the upper part of the process chamber, and the gas uniformizing component comprises: a first sub-gas uniforming assembly, forming the first gas uniforming portion and having a plurality of first gas uniforming holes, wherein the first gas uniforming holes are located below the first guide assembly, and when the carrier is placed in the process chamber, the first gas uniforming holes are located above the carrying area on the first side of the carrier, and are configured to provide the process gas to the first side of the carrier; A second sub-gas equalizing assembly forms the second gas equalizing portion and has a plurality of second gas equalizing holes, wherein the second gas equalizing holes are located below the first guide assembly. When the carrier is placed in the process chamber, the second gas equalizing holes are located above the carrying area on the second side of the carrier and are configured to provide the process gas to the second side of the carrier.

5. The deposition device according to claim 4, characterized in that: The exhaust assembly is arranged at the lower part of the process chamber, and the exhaust assembly has a first exhaust part, a second exhaust part and a first connecting part, the first exhaust part and the second exhaust part are arranged at intervals along the second direction, and the first connecting part connects the first exhaust part and the second exhaust part, wherein, when the carrier is placed in the process chamber, the first connecting part is located below the lower end of the carrier, the first exhaust part is located on the first side of the carrier, and the second exhaust part is located on the second side of the carrier.

6. The deposition device according to claim 5, characterized in that: The exhaust assembly has a plurality of first through holes, and the deposition device further comprises: A plurality of connecting shafts, wherein the connecting shafts are arranged in the process chamber, and the first ends of the connecting shafts pass through the first through holes; A plurality of first guide wheels are arranged at intervals along the third direction, and the plurality of first guide wheels are respectively mounted on the first ends of the plurality of connecting shafts, and the first guide wheels are used to guide the movement of the lower end of the carrier plate along the third direction.

7. The deposition device according to claim 5, characterized in that: The process chamber has a first side wall and a second side wall arranged opposite to each other along the second direction, and when the carrier is placed in the process chamber, the carrier is located between the first side wall and the second side wall; wherein the first side wall has at least one first protrusion on a side facing the second side wall, the orthographic projection of the first protrusion on the carrier can at least cover at least one of the bearing areas on the first side of the carrier, and the first protrusion, the first air uniforming portion and the first air extraction portion can form a first sub-chamber with the first side of the carrier; and / or, The second side wall has at least one second protrusion on the side facing the first side wall, and the orthographic projection of the second protrusion on the carrier can at least cover at least one of the bearing areas on the second side of the carrier, and the second protrusion, the second air uniforming portion and the second air pumping portion can form a second sub-chamber with the second side of the carrier.

8. The deposition device according to claim 7, characterized in that: In the case where the first side wall has at least one first protrusion, the deposition device further includes: a first flow focusing member extending along the third direction, the first flow focusing member having a first connecting port and a first port arranged opposite to each other along the first direction, the first connecting port being connected to a plurality of the first gas uniforming holes, and a flow area of ​​the first port being smaller than a flow area of ​​the first connecting port, and the first port extending into the first sub-chamber; and / or, In the case where the second side wall has at least one second protrusion, the deposition device further includes: a second flow focusing member extending along the third direction, the second flow focusing member having a second connecting port and a second port arranged opposite to each other along the first direction, the second connecting port being connected to a plurality of the second gas uniforming holes, and a flow area of ​​the second port being smaller than a flow area of ​​the second connecting port, and the second port extending into the second sub-chamber.

9. The deposition device according to claim 7, characterized in that: In the case where the first sidewall has at least one first protrusion, the deposition device further includes: two first baffles, which are arranged on the first protrusion, are arranged opposite to each other along the third direction, and are located on a side of the first protrusion facing the first sub-chamber, and the two first baffles are configured to slow down the outflow speed of the process gas in the first sub-chamber; and / or In the case where the second side wall has at least one second protrusion, the deposition device further includes: two second baffles, which are arranged on the second protrusion, are arranged opposite to each other along the third direction, and are located on the side of the second protrusion facing the second sub-chamber, and the two second baffles are configured to slow down the outflow speed of the process gas in the second sub-chamber.

10. A deposition device, characterized in that: include: At least one carrier, wherein a first side of the carrier and a second side of the carrier are arranged opposite to each other, and each of the first side of the carrier and the second side of the carrier has at least one carrying area, and the carrying area is used to place a substrate; The deposition device according to any one of claims 1 to 9 comprises a process chamber, wherein the process chamber is configured to accommodate at least one of the carrier plates.

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