Processing method and structure of substrate

Abstract

The invention relates to the technical field of chip packaging, and discloses a substrate processing method and structure, and the method comprises the steps: S100, carrying out the circuit manufacturing of one surface or two surfaces of a glass wafer, and cutting the glass wafer to obtain a plurality of glass plate units; s200, a plurality of first positioning targets and a plurality of mounting cavities are manufactured on the core board frame; s300, a bonding layer is attached to the bottom face of the core plate frame, glass plate units are attached to the portions, in the mounting cavities, of the bonding layer according to the positioning targets, and the glass plate units correspond to the mounting cavities one to one; step S400, covering one or two surfaces of the glass plate unit with a sealing glue layer and pressing; and S500, a first signal export hole in signal connection with the glass plate unit is formed in the sealing glue layer. The problem that an existing glass plate is fragile in the machining process is effectively solved, and the utilization rate of a glass wafer material is increased.

Description

Technical Field

[0001] The present invention relates to the technical field of chip packaging, and in particular to a processing method and structure of a substrate. Background Art

[0002] With the development of high-performance chips, traditional organic material substrates have shown certain limitations in the packaging applications of high-performance chips. As the number of chips fixed on the substrate increases, the total number of transistors integrated in the entire chip also increases accordingly. Organic material substrates are easy to process and have low production costs, and have been used in the field of chip packaging for many years. However, with the increase in demand for chip computing, signal transmission speed, power transmission efficiency, and the stability of the packaging substrate have become particularly critical, and organic material substrates face capacity limits. Glass IC substrates led by Intel have become materials suitable for the next generation of advanced packaging. Samsung, AMD, Apple and other internationally renowned technology chip companies have stated that they will introduce or explore glass substrate chip packaging technology. However, in existing technologies, the processing of packaging substrates with glass as the core material generally faces the problems of fragile glass processing and low glass material utilization. These problems not only increase production costs, but also limit the widespread application and further development of glass IC substrate technology.

[0003] Therefore, ensuring the yield rate and utilization rate of glass plate processing during the packaging process has become an urgent problem to be solved. Summary of the invention

[0004] The main purpose of the present invention is to provide a processing method and structure of a substrate, aiming to solve the technical problem of fragile glass plate processing during packaging.

[0005] To achieve the above-mentioned purpose, the present invention provides a processing method for a substrate, comprising: step S100: making circuits on one side or both sides of a glass wafer, and then cutting to obtain a plurality of glass plate units; step S200: making a plurality of first positioning targets and a plurality of installation cavities on a core plate frame; step S300: attaching an adhesive layer to the bottom surface of the core plate frame, and attaching the glass plate unit to the adhesive layer in the installation cavity according to the first positioning target, and the glass plate unit corresponds to the installation cavity one by one; step S400: covering one side or both sides of the glass plate unit with a sealing layer and pressing them together; step S500: setting a first signal lead-out hole in the sealing layer that is connected to the signal of the glass plate unit.

[0006] Preferably, in step S100, a second positioning target is set on the glass wafer before cutting.

[0007] Preferably, in step S200, each installation cavity is provided with a group of the first positioning targets; and the glass plate units are arranged one by one in the corresponding installation cavity by aligning the second positioning targets with the first positioning targets.

[0008] Preferably, step S410 is also included between step S400 and step S500: finding the second positioning target by laser drilling in the sealing layer, locating the position coordinates of the first signal export hole by the second positioning target, and making the first signal export hole by laser burning and copper electroplating processes in sequence.

[0009] Preferably, between step S300 and step S400, step S310 is further included: copper plating is performed on the surface of the glass plate unit on the core plate frame.

[0010] Preferably, in step S400, a first sealing layer is covered on the top surface of the core board frame and the first pressing and curing is performed, and the first sealing layer wraps the side edges of the top surface of the glass plate unit; the adhesive layer is peeled off, and a second sealing layer is covered on the bottom surface of the core board frame and the second pressing and curing is performed, and the second sealing layer wraps the side edges of the bottom surface of the glass plate unit.

[0011] Preferably, step S210 is further included between step S200 and step S300: performing UV laser treatment and browning treatment on the core plate frame and the glass plate unit in sequence.

[0012] Preferably, step S220 is further included between step S210 and step S300: a plurality of process expansion and contraction holes are provided on the core plate frame, and metal copper is filled in the process expansion and contraction holes.

[0013] Preferably, after step S500, the method further includes S510, wherein a first protective layer is attached to the bottom end of the sealing layer, an extension hole connected to the first signal lead-out hole is drilled in the first protective layer, and metal copper is filled in the extension hole to be electrically connected to the first signal lead-out hole; a second protective layer is attached to the top of the sealing layer, a connecting hole is drilled in the sealing layer along the extension hole, a second signal lead-out hole connected to the connecting hole is drilled in the second protective layer, and the connecting hole and the second signal lead-out hole are filled with metal copper in sequence.

[0014] The present invention also provides a substrate structure, comprising:

[0015] Several glass plate units are cut from the same glass wafer, and one or both sides of the glass plate unit are provided with a circuit layer; a core plate frame, the core plate frame is provided with a first positioning target and an installation cavity for burying the glass plate unit, the first positioning target corresponds to the installation cavity one by one, and the glass plate unit is installed in the corresponding installation cavity through the first positioning target; a first sealing layer, covering the top surface of the core plate frame, and the first sealing layer is adhered to the top surface of the glass plate unit; a second sealing layer, covering the bottom surface of the core plate frame, and the second sealing layer is adhered to the bottom surface of the glass plate unit; a first signal lead-out hole, penetrated by the second sealing layer, and the first signal lead-out hole is filled with metal copper connected to the circuit layer for realizing signal lead-out of the circuit layer of the glass plate unit.

[0016] In the solution of the present invention, by embedding glass plates cut from the same glass wafer into the same core plate frame to form a glass substrate, the problem of fragility in the existing glass plate processing process is effectively solved, and in this process, the glass wafer material is utilized to the greatest extent, ensuring that each glass plate can be fully utilized, thereby improving the utilization rate of the glass wafer material. The innovative PNL (Panel) level embedded glass plate technology can effectively increase production capacity, because multiple glass plates can be processed simultaneously in a core plate frame, reducing processing steps and material waste, and significantly reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] One or more embodiments are exemplarily described by corresponding drawings, which do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and the figures in the drawings do not constitute proportional limitations unless otherwise stated.

[0018] Figure 1 A schematic flow chart of an embodiment of a method for processing a substrate of the present invention;

[0019] Figure 2 A schematic diagram of a processing structure of an embodiment of a novel glass substrate structure of the present invention;

[0020] Figure 3 A schematic diagram of a processing structure of an embodiment of a novel glass substrate structure of the present invention;

[0021] Figure 4 A schematic diagram of the processing structure of an embodiment of the novel glass substrate structure of the present invention;

[0022] Figure 5 A schematic diagram of a processing structure of an embodiment of a novel glass substrate structure of the present invention;

[0023] Figure 6A schematic diagram of the processing structure of an embodiment of the novel glass substrate structure of the present invention;

[0024] Figure 7 A schematic diagram of the processing structure of an embodiment of the novel glass substrate structure of the present invention;

[0025] Figure 8 A schematic diagram of the processing structure of an embodiment of the novel glass substrate structure of the present invention;

[0026] Fig. 9 A schematic diagram of the processing structure of an embodiment of the novel glass substrate structure of the present invention;

[0027] Fig.10 for Figure 2 Schematic diagram of the cutaway structure at A in the middle;

[0028] Fig.11 for Fig.10 Schematic diagram of the cutaway structure at B in the middle;

[0029] Fig.12 A schematic diagram of the processing structure of an embodiment of the novel glass substrate structure of the present invention;

[0030] Fig.13 This is a schematic diagram of the processing structure of an embodiment of the novel glass substrate structure of the present invention.

[0031] In the figure: 1. glass wafer; 2. glass plate unit; 3. core plate frame; 31. mounting cavity; 32. process expansion and contraction hole; 4. adhesive layer; 5. sealing layer; 51. first sealing layer; 52. second sealing layer; 6. first signal lead-out hole; 7. interlocking unit; 81. first protective layer; 811. extension hole; 82. second protective layer; 9. connection hole; 10. second signal lead-out hole. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present invention, the present invention is described in more detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that when an element is described as "fixed to" another element, it can be directly on another element, or there can be one or more centered elements therebetween. When an element is described as "connected" to another element, it can be directly connected to another element, or there can be one or more centered elements therebetween. The terms "vertical", "horizontal", "left", "right", "inside", "outside" and similar expressions used in this specification are only for illustrative purposes. In the description of the present invention, the terms "first" and "second" are used only for descriptive purposes and cannot be understood as indicating relative importance or implicitly indicating the number of technical features indicated. Therefore, unless otherwise specified, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features; the meaning of "multiple" is two or more. The term "include" and any variation thereof means non-exclusive inclusion, and one or more other features, integers, steps, operations, units, components and / or combinations thereof may be present or added.

[0033] In addition, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, an indirect connection through an intermediate medium, or a connection between two components. All technical and scientific terms used in this specification have the same meaning as those generally understood by technicians in the technical field of the present invention. The terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used in this specification includes any and all combinations of one or more related listed items.

[0034] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0035] Please refer to Figures 1 to 11 The present invention provides a processing method for a substrate, comprising: step S100: making a circuit on one side or both sides of a glass wafer 1, and then cutting to obtain a plurality of glass plate units 2; step S200: making a plurality of first positioning targets and a plurality of mounting cavities 31 on a core plate frame 3; step S300: attaching an adhesive layer 4 to the bottom surface of the core plate frame 3, and attaching the glass plate unit 2 to the adhesive layer 4 in the mounting cavity 31 according to the first positioning target, so that the glass plate unit 2 corresponds to the mounting cavity 31 one by one; step S400: covering one side or both sides of the glass plate unit 2 with a sealing layer 5 and pressing them; step S500: setting a first signal lead-out hole 6 in the sealing layer 5 for connecting the signal of the glass plate unit 2.

[0036] Before cutting, one or both sides of the glass wafer 1 are etched, a second positioning target is drilled, and copper is sputtered in the positioning hole and then electroplated to complete the circuit production. The sputtering copper process can form a uniform and dense copper film on the surface of the glass wafer 1. The copper film, as a conductive substrate, can ensure that the copper ions in the electroplating solution are uniformly deposited on the surface of the glass wafer 1 under the action of the electric field to form a thicker copper layer, which not only enhances the conductive performance of the circuit on the surface of the glass plate unit 2, but also improves the mechanical strength and corrosion resistance; when processing the glass wafer 1, high-precision glass plate cutting equipment and bonding equipment are used, and the first positioning target is made on the chip frame by mechanical drilling, laser drilling or etching. The glass plate cut from the same glass wafer 1 is embedded in the same core plate frame 3 to make a glass substrate, which effectively reduces the problem of fragility in the existing glass plate processing process, and in this process, the glass wafer 1 material is utilized to the greatest extent, ensuring that each glass plate unit 2 can be fully utilized, and improving the utilization rate of the glass wafer 1 material. The innovative PNL (Panel) level embedded glass panel unit 2 technology can effectively improve production capacity, and multiple glass panel units 2 can be processed simultaneously in one core panel frame 3, reducing processing steps and material waste, and significantly reducing production costs.

[0037] Please refer to Figure 1 to Figure 2 In this embodiment, in step S100, a second positioning target is set on the glass wafer 1 before cutting. The second positioning target can also be made on the chip frame by mechanical drilling, laser drilling or etching. During the entire packaging process, the second positioning target is used to position and guide the glass plate unit 2, guide the glass plate unit 2 to be mounted to the designated installation cavity 31, or instruct the equipment to process the designated circuit position in the glass plate unit 2.

[0038] Please refer to Figure 1 to Figure 2 In this embodiment, in step S200, each installation cavity 31 is provided with a set of first positioning targets; the glass plate units 2 are arranged one by one in the corresponding installation cavity 31 by aligning the second positioning targets with the first positioning targets. The alignment process of the second positioning targets with the first positioning targets ensures the precise position of the glass plate unit 2 in the installation cavity 31, reducing the error in the assembly process.

[0039] Please refer to Figure 7 In this embodiment, step S210 is further included between step S200 and step S300: UV laser and browning treatment are performed on the core plate frame 3 and the glass plate unit 2 in sequence. UV laser can ensure the precise cutting and positioning of the core plate frame 3 and the glass plate, and the browning treatment helps to ensure that the adhesive layer 4 can be firmly adhered to the core plate frame 3 and the glass plate by changing the chemical and physical properties of the surface of the core plate frame 3 and the glass plate, thereby improving the stability and reliability of the entire structure.

[0040] Please refer to Figures 2 to 7 In this embodiment, step S410 is also included between step S400 and step S500: finding the second positioning target in the sealing layer 5 by laser drilling, locating the position coordinates of the first signal lead-out hole 6 by the second positioning target, and forming the first signal lead-out hole 6 by laser burning and copper electroplating processes in sequence.

[0041] Please refer to Figures 9 and 10 In this embodiment, step S310 is further included between step S300 and step S400: copper plating is performed on the surface of the glass plate unit 2 on the core plate frame 3. The laser drilling and laser burning techniques ensure high-precision positioning during the processing of the first signal lead-out hole 6. At the same time, the copper plating process forms a uniform copper layer with good conductivity on the hole wall, ensuring the stability and reliability of signal transmission during the working process of the signal lead-out hole.

[0042] Please refer to Figures 7 to 9 In this embodiment, in step S400, a first sealing layer 51 is coated on the top surface of the core plate frame 3 and the first pressing and curing is performed, and the first sealing layer 51 wraps the top side of the glass plate unit 2; the adhesive layer 4 is peeled off, and a second sealing layer 52 is coated on the bottom surface of the core plate frame 3 and the second pressing and curing is performed, and the second sealing layer 52 wraps the bottom side of the glass plate unit 2.

[0043] Please refer to Fig.11 In this embodiment, after step S500, step S510 is further included, wherein a first protective layer 81 is attached to the bottom end of the sealing layer 5, an extension hole 811 connected to the first signal lead-out hole 6 is drilled in the first protective layer 81, and metal copper is filled in the extension hole 811 to be electrically connected to the first signal lead-out hole 6; a second protective layer 82 is attached to the top of the sealing layer 5, a connection hole 9 is drilled in the sealing layer 5 along the extension hole 811, a second signal lead-out hole 10 connected to the connection hole 9 is drilled in the second protective layer 82, and the connection hole 9 and the second signal lead-out hole 10 are filled with metal copper in sequence. The first protective layer 81 and the second protective layer 82 are wrapped around the upper and lower surfaces of the core plate frame 3 and are made of insulating protective material. The first signal lead-out hole 6 is filled with metal material to complete the electrical connection with the external circuit at the bottom through the extension hole 811 connected to it; and a connecting hole 9 can also be drilled in the sealing layer 5 and a second signal lead-out hole 10 can be drilled in the second protective layer 82. After filling with metal material, the electrical connection between the second signal lead-out hole 10 and the first signal lead-out hole 6 can be achieved, so that the circuit signal in the glass plate unit 2 in the interlocking unit 7 is guided to the top layer of the interlocking unit 7, which is convenient for subsequent circuit connection.

[0044] Please refer to Figure 12 to Figure 13In this embodiment, step S220 is further included between step S210 and step S300: a plurality of process expansion and contraction holes 32 are provided on the core plate frame 3, and metal copper is filled in the process expansion and contraction holes 32. The process expansion and contraction holes 32 are located between the interlocking units 7 (the packaging structure of the single glass plate unit 2 and the mounting cavity 31), and the multiple interlocking units 7 are placed between them and deformed due to the extrusion caused by the expansion and contraction changes. Metal copper, as a good thermal and electrical conductive material, can effectively transfer heat and current. The expansion and contraction holes filled with metal copper also enhance the mechanical strength of the core plate frame 3 and improve its ability to resist deformation and damage.

[0045] Please refer to Figures 9 to 12 The present invention also provides a substrate structure, comprising:

[0046] Several glass plate units 2 are cut from the same glass wafer 1, and a circuit layer is provided on one or both sides of the glass plate unit 2; a core plate frame 3, the core plate frame 3 is provided with a first positioning target and an installation cavity 31 for burying the glass plate unit 2, the first positioning target corresponds to the installation cavity 31 one by one, and the glass plate unit 2 is installed in the corresponding installation cavity 31 through the first positioning target; a first sealing layer 51 is covered on the top surface of the core plate frame 3, and the first sealing layer 51 is adhered to the top surface of the glass plate unit 2; a second sealing layer 52 is covered on the bottom surface of the core plate frame 3, and the second sealing layer 52 is adhered to the bottom surface of the glass plate unit 2; a first signal lead-out hole 6 is penetrated in the second sealing layer 52, and the first signal lead-out hole 6 is filled with metal copper connected to the circuit layer for realizing the signal lead-out of the circuit layer of the glass plate unit 2. This structure embeds a glass plate cut from the same glass wafer 1 into the same core plate frame 3 to form a glass substrate, effectively reducing the problem of fragility of the existing glass plate processing process and making maximum use of the glass wafer 1 material in this process.

[0047] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. Under the concept of the present invention, the technical features in the above embodiments or different embodiments may also be combined, the steps may be implemented in any order, and there are many other changes in different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity. Although the present invention has been described in detail with reference to the above embodiments, a person of ordinary skill in the art should understand that the technical solutions described in the above embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for processing a substrate, characterized in that: include: Step S100: fabricating circuits on one or both sides of a glass wafer (1), and then cutting the glass wafer (1) to obtain a plurality of glass plate units (2); Step S200: making a plurality of first positioning targets and a plurality of installation cavities (31) on the core plate frame (3); Step S300: affixing an adhesive layer (4) on the bottom surface of the core plate frame (3), and affixing the glass plate unit (2) on the adhesive layer (4) in the installation cavity (31) according to the first positioning target, so that the glass plate unit (2) corresponds to the installation cavity (31) one by one; Step S400: Covering one or both sides of the glass plate unit (2) with a sealing layer (5) and pressing them together; Step S500: a first signal derivation hole (6) connected to the signal of the glass plate unit (2) is provided on the sealing layer (5).

2. The method for processing a substrate according to claim 1, characterized in that: In step S100, a second positioning target is set on the glass wafer (1) before cutting.

3. The method for processing a substrate according to claim 2, characterized in that: In step S200, each of the installation cavities (31) is provided with a group of the first positioning targets; The glass plate units (2) are arranged one by one in the corresponding installation cavity (31) by aligning the second positioning target with the first positioning target.

4. The method for processing a substrate according to claim 3, characterized in that: The method further includes step S410 between step S400 and step S500: finding the second positioning target by laser drilling in the sealing layer (5), locating the position coordinates of the first signal lead-out hole (6) by the second positioning target, and sequentially forming the first signal lead-out hole (6) by laser drilling and copper electroplating processes.

5. The method for processing a substrate according to claim 4, characterized in that: The method further includes step S310 between step S300 and step S400: copper plating is performed on the surface of the glass plate unit (2) on the core plate frame (3).

6. The method for processing a substrate according to claim 1 or 5, characterized in that: In step S400, a first sealing layer (51) is applied to the top surface of the core plate frame (3) and subjected to a first pressing and curing process, wherein the first sealing layer (51) wraps around the top surface side edge of the glass plate unit (2); The adhesive layer (4) is peeled off, and a second sealing layer (52) is applied to the bottom surface of the core plate frame (3) for a second pressing and curing, wherein the second sealing layer (52) wraps the bottom side of the glass plate unit (2).

7. The method for processing a substrate according to claim 6, characterized in that: Also included between step S200 and step S300 is step S210: sequentially performing UV laser treatment and browning treatment on the core plate frame (3) and the glass plate unit (2).

8. The method for processing a substrate according to claim 7, characterized in that: Also included between step S210 and step S300 is step S220: a plurality of process expansion and contraction holes (32) are provided on the core plate frame (3), and metal copper is filled in the process expansion and contraction holes (32).

9. The method for processing a substrate according to claim 8, characterized in that: After step S500, the method further includes step S510, wherein a first protective layer (81) is attached to the bottom end of the sealing layer (5), an extension hole (811) connected to the first signal lead-out hole (6) is drilled in the first protective layer (81), and metal copper is filled in the extension hole (811) to be electrically connected to the first signal lead-out hole (6); A second protective layer (82) is attached to the top of the sealing layer (5), a connecting hole (9) is drilled in the sealing layer (5) along the extension hole (811), a second signal lead-out hole (10) connected to the connecting hole (9) is drilled in the second protective layer (82), and the connecting hole (9) and the second signal lead-out hole (10) are filled with metal copper in sequence.

10. A substrate structure, characterized in that: include: A plurality of glass plate units (2) cut from a same glass wafer (1), wherein one or both sides of the glass plate unit (2) are provided with a circuit layer; A core plate frame (3), the core plate frame (3) being provided with a first positioning target and a mounting cavity (31) for embedding the glass plate unit (2), the first positioning target corresponding to the mounting cavity (31) one by one, and the glass plate unit (2) being mounted in the corresponding mounting cavity (31) via the first positioning target; A first sealing glue layer (51) is covered on the top surface of the core plate frame (3), and the first sealing glue layer (51) is attached to the top surface of the glass plate unit (2); A second sealing glue layer (52) is covered on the bottom surface of the core plate frame (3), and the second sealing glue layer (52) is attached to the bottom surface of the glass plate unit (2); A first signal derivation hole (6) is provided through the second sealing glue layer (52), and the first signal derivation hole (6) is filled with metal copper connected to the circuit layer for realizing signal derivation of the circuit layer of the glass plate unit (2).

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