Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus which can remove processing liquid remaining on opposite surfaces of a plate to maintain the cleanliness of the plate. The substrate processing apparatus includes: a rotating body configured to rotate a substrate held by a holding portion; a processing liquid supply unit that supplies a processing liquid to the surface to be processed of the substrate; a plate provided at a position facing the surface to be processed; a heating unit that is provided on the plate and heats the processing liquid supplied to the surface to be processed of the substrate; and a cleaning unit that cleans a facing surface that faces the surface to be processed of the plate. The cleaning unit includes: a liquid supply unit that supplies a cleaning liquid to the facing surface; a wiping unit that is in contact with the facing surface and wipes the cleaning liquid supplied by the liquid supply unit; a pillar that supports the wiping part so as to be rotatable about a shaft extending in a direction parallel to the facing surface as a rotation shaft; and a moving mechanism that moves the wiping part along the facing surface.

Description

Technical Field

[0001] The invention relates to a substrate processing device. Background Art

[0002] As a wet etching device that etches a film stacked on a substrate such as a semiconductor wafer with a processing liquid, there is a batch type substrate processing device that immerses multiple substrates in the processing liquid at one time. Such a batch type substrate processing device can process multiple substrates at one time, so the productivity is high.

[0003] However, a batch-type substrate processing apparatus immerses a plurality of substrates in a processing liquid under common conditions, and therefore it is difficult to finely adjust the etching depth, etc. for each substrate according to differences in the film thickness, etc. formed on each substrate. Therefore, a single-chip substrate processing apparatus is used, which rotates the substrate while supplying a processing liquid for etching near the rotation center of the processed surface of the substrate, and spreads the processing liquid on the processed surface of the substrate, thereby processing the substrates one by one.

[0004] As a treatment liquid for etching, an acidic liquid such as hydrofluoric acid, phosphoric acid, or sulfuric acid is used. For example, in a substrate having an oxide film and a nitride film stacked thereon, when etching the nitride film, there is a substrate processing device that uses an aqueous solution of phosphoric acid (phosphoric acid solution) as a treatment liquid. The higher the temperature of the phosphoric acid solution, the higher the etching rate. If the temperature of the phosphoric acid solution decreases, the etching rate decreases. Therefore, in order to obtain the desired etching rate, the phosphoric acid solution must be maintained at a high temperature. For example, the nitride film is etched by heating the phosphoric acid solution to 150°C to 160°C and supplying it to the substrate.

[0005] However, the thermal conductivity of substrates such as silicon wafers is high. Therefore, the heat of the phosphoric acid solution supplied to the processed surface of the substrate escapes through the substrate, and the temperature tends to drop. That is, the phosphoric acid solution supplied near the rotation center maintains a high temperature, but as it moves toward the periphery of the substrate, the temperature of the phosphoric acid solution drops due to heat dissipation.

[0006] In this way, if the temperature of the phosphoric acid solution varies depending on the position on the processed surface of the substrate, the etching rate will differ depending on the position of the substrate, making it difficult to uniformly process the entire processed surface of the substrate. In order to cope with this problem, there is a substrate processing device that performs etching while maintaining the temperature of the phosphoric acid solution on the processed surface of the substrate (see Patent Document 1).

[0007] The substrate processing device is provided with a plate facing the processed surface of the substrate and having a built-in heater, and the plate is brought close to the processed surface of the substrate to supply a high-temperature phosphoric acid solution to the processed surface of the substrate. The distance between the substrate and the plate is, for example, about several millimeters, and the phosphoric acid solution flows on the processed surface of the substrate while being heated by the plate. Thus, the etching rate of the phosphoric acid solution can be maintained.

[0008] However, in the processing process of Patent Document 1, the processing liquid is supplied to the processed surface of the substrate while the plate is brought close to the substrate, so the processing liquid adheres to the opposite surface of the plate that faces the processed surface of the substrate. If the processing liquid remaining on the opposite surface of the plate dries, it may become a source of particles.

[0009] In order to cope with this situation, there is a substrate processing apparatus provided with a cleaning unit for removing the processing liquid remaining on the facing surface of the plate by ejecting compressed air or using a soft object such as a sponge (Patent Document 2).

[0010] [Prior art literature]

[0011] [Patent Document]

[0012] [Patent Document 1] International Publication No. 2011 / 090141

[0013] [Patent Document 2] Japanese Patent Application Publication No. 2004-259734 Summary of the invention

[0014] [Problems to be solved by the invention]

[0015] However, if the remaining treatment liquid is removed by ejecting compressed air, there is a risk that the droplets of treatment liquid or cleaning liquid remaining on the facing surface of the plate due to the ejection of gas will be scattered. In addition, before the droplets are removed from the facing surface of the plate by the ejection of gas, that is, before the droplets move to the outside of the facing surface of the plate, the temperature of the facing surface of the plate may be lowered by the attached droplets. On the other hand, when the droplets on the facing surface of the plate are removed by using a soft object such as a sponge, there is a risk that precipitates generated by the drying of the treatment liquid will remain on the facing surface of the plate.

[0016] An embodiment of the present invention is proposed to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus capable of removing processing liquid remaining on a facing surface of a plate to maintain the cleanliness of the plate.

[0017] [Technical means to solve the problem]

[0018] A substrate processing device according to an embodiment of the present invention comprises: a rotating body, which rotates a substrate held by a holding portion; a processing liquid supply portion, which supplies processing liquid to a processed surface of the substrate; a plate, which is arranged at a position opposite to the processed surface; a heating portion, which is arranged on the plate, which heats the processing liquid supplied to the processed surface of the substrate; and a cleaning portion, which cleans an opposing surface of the plate opposite to the processed surface, the cleaning portion comprising: a liquid supply portion, which supplies cleaning liquid to the opposing surface; a wiping portion, which contacts the opposing surface to wipe the cleaning liquid supplied by the liquid supply portion; a support, which supports the wiping portion so that it can rotate with an axis extending in a direction parallel to the opposing surface as a rotation axis; and a moving mechanism, which moves the wiping portion along the opposing surface.

[0019] [Effects of the Invention]

[0020] According to the embodiment of the present invention, the processing liquid remaining on the facing surfaces of the plate can be removed to maintain the cleanliness of the plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is an overall configuration diagram showing a state in which a panel of the substrate processing apparatus according to the embodiment is located at a standby position.

[0022] Figure 2 Yes means Figure 1 An overall structural diagram of a substrate processing state of a substrate processing device.

[0023] Figure 3 It means using the cleaning unit to Figure 1 An overall structural diagram of a substrate processing device in a state where a plate is being cleaned.

[0024] Figure 4 Yes means Figure 1 An overall structural diagram of a substrate cleaning state of a substrate processing device.

[0025] Figure 5 It is a plan view showing the cleaning section.

[0026] Figure 6 It means cleaning department Figure 5 AA cross-section diagram.

[0027] Figure 7 It means cleaning department Figure 5 BB cross-section diagram.

[0028] Figure 8 It means cleaning department Figure 5 CC cross-section diagram.

[0029] Fig. 9 It is a bottom view showing the cleaning operation of the cleaning unit.

[0030] Fig.10 It is a flowchart showing the processing flow of the substrate processing apparatus according to the embodiment.

[0031] Fig.11 This is a cross-sectional view of the cleaning portion showing another embodiment (a support is provided on the other end side of the wiping portion, and an adjusting portion is provided on both end sides of the wiping portion).

[0032] Fig.12 This is a cross-sectional view of a cleaning portion showing another embodiment (the adjustment portion is a movable pin).

[0033] Fig.13 This is a cross-sectional view showing a cleaning portion according to another embodiment (a support is provided on one end side of the wiping portion, and an adjusting portion is provided on the other end side of the wiping portion).

[0034] Fig.14 This is a cross-sectional view showing a cleaning portion according to another embodiment (a support column and one adjustment portion are provided at the center of the wiping portion).

[0035] [Explanation of Symbols]

[0036] 1: Substrate processing equipment

[0037] 10: Rotating body

[0038] 11: Workbench

[0039] 12: Cup

[0040] 12a: Drainage port

[0041] 20: Rotating mechanism

[0042] 21: Driving source

[0043] 30: Maintaining

[0044] 31: Holding pin

[0045] 40: Supply Department

[0046] 41a: Liquid tank

[0047] 41b: Supply pipe

[0048] 41c, 41e, 92c: valve

[0049] 41d: Flow meter

[0050] 50: Plate

[0051] 50a: Spout

[0052] 50b: Flange

[0053] 51: Facing surface

[0054] 60: Heating unit

[0055] 61: Heater

[0056] 70: Inspection Department

[0057] 80: Drive unit

[0058] 81: Support Department

[0059] 82, 95a: Arm

[0060] 83: Advance and Retreat Mechanism

[0061] 90: Cleaning Department

[0062] 91: Support

[0063] 92: Liquid supply department

[0064] 92a: Supply port

[0065] 92b: Branch management

[0066] 93: Wiping Department

[0067] 93a: Contact part

[0068] 93b: Cover

[0069] 93c: Support part

[0070] 93e: Bearing

[0071] 94: Liquid receiving part

[0072] 94a: discharge hole

[0073] 94b: discharge pipe

[0074] 95: Mobile mechanism

[0075] 95b: Swinging part

[0076] 96: Pillar

[0077] 97: Adjustment Department

[0078] 97a: Inclined part

[0079] 97b: Fixed part

[0080] 100: Control Department

[0081] 110: Institutional Control Department

[0082] 120: Heating control unit

[0083] 411: Processing liquid supply unit

[0084] 412: Cleaning fluid supply unit

[0085] d: interval

[0086] Le: Treatment fluid

[0087] Lp, Lw: cleaning fluid

[0088] S01, S02, S03, S04, S05, S06, S07, S08, S09, S10, S11, S12, S13, S14, S15, S16: Steps

[0089] W: substrate DETAILED DESCRIPTION

[0090] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0091] [summary]

[0092] like Figure 1 and Figure 2 As shown, the substrate processing apparatus 1 of this embodiment processes the processed surface by supplying the heated processing liquid Le to one surface of the substrate W (hereinafter referred to as the processed surface) in the supply unit 40 while rotating the substrate W together with the rotating body 10. Figure 2 As shown, the driving unit 80 brings the plate 50 having the heating unit 60 close to the processed surface of the substrate W, narrows the space between the plate 50 and the substrate W, thereby making it difficult for heat to escape and heating the substrate W to suppress the temperature drop of the processing liquid Le. The plate 50 is non-contact with the substrate W and can move forward and backward relative to the substrate W.

[0093] Furthermore, if Figure 3 As shown, the substrate processing apparatus 1 raises the plate 50 to a position away from the substrate W, and supplies the cleaning liquid Lp to the facing surface 51 facing the substrate W by the cleaning unit 90 (see Figure 7 ) The cleaning liquid Lp and the processing liquid Le are wiped from the facing surface 51, thereby suppressing the temperature drop of the plate 50. Then, as Figure 4 As shown, in a state where the plate 50 is kept away from the substrate W, the cleaning liquid Lw is supplied from the supply unit 40 to the processing surface of the rotating substrate W, whereby the processing surface of the substrate W is cleaned.

[0094] The substrate W processed in this embodiment is, for example, a silicon wafer having a nitride film formed thereon. As the processing liquid Le for processing the substrate W, for example, phosphoric acid (H 3 PO 4) aqueous solution (hereinafter referred to as phosphoric acid solution). In addition, pure water (deionized water (DIW)) is used as a cleaning liquid Lw for cleaning the substrate W. Pre-heated warm pure water may also be used as the cleaning liquid Lw. In addition, the cleaning liquid Lw is not limited to pure water. For example, hydrofluoric acid (aqueous solution of hydrogen fluoride) may also be used.

[0095] [structure]

[0096] like Figure 1 to Figure 4 As shown, the substrate processing apparatus 1 includes a rotating body 10 , a rotating mechanism 20 , a holding unit 30 , a supply unit 40 , a plate 50 , a heating unit 60 , a detection unit 70 , a driving unit 80 , a cleaning unit 90 , and a control unit 100 .

[0097] (rotating body)

[0098] The rotating body 10 rotates the substrate W held by the holding unit 30. The rotating body 10 has a table 11 facing the substrate W held by the holding unit 30 with a gap therebetween. The rotating body 10 has a cylindrical shape with one end closed by the table 11. The table 11 is a circular surface with a diameter larger than that of the substrate W.

[0099] The rotating body 10 is formed of a material resistant to the treatment liquid Le. For example, the rotating body 10 is preferably formed of a fluorine-based resin such as polytetrafluoroethylene (PTFE) or polychlorotrifluoroethylene (PCTFE). Although not shown in the figure, such a rotating body 10 can be rotatably set on a fixed base fixed to the installation surface or a stand set on the installation surface by a rotating mechanism 20 described later.

[0100] In addition, a cup 12 is provided around the rotating body 10. The cup 12 is a cylindrical body bent in a manner that the diameter of the upper portion is narrowed. A discharge port 12a for discharging the processing liquid Le and the cleaning liquid Lw is provided on the bottom surface of the cup 12. The cup 12 receives various processing liquids Le and cleaning liquids Lw scattered from the rotating substrate W from around the substrate W. The processing liquid Le and cleaning liquid Lw received by the cup 12 are discharged to a recovery path not shown in the figure through the discharge port 12a.

[0101] (Rotation mechanism)

[0102] The rotating mechanism 20 is a mechanism for rotating the rotating body 10. The rotating mechanism 20 has a driving source 21. The driving source 21 is fixed to a fixed base and is a hollow motor having a hollow rotor and a stator for rotating the rotor. The driving source 21 rotates the rotating body 10 together with the rotor by energizing the coil of the stator.

[0103] (Maintaining part)

[0104] The holding portion 30 holds the substrate W in parallel with the worktable 11 and at a distance therefrom. The holding portion 30 includes a holding pin 31. The holding pin 31 is eccentrically rotated about an axis parallel to the axis of the rotating body 10 by a driving mechanism (not shown) to move between a holding position where the substrate W is held in contact with the edge of the substrate W and a release position where the substrate W is released by being separated from the edge of the substrate W.

[0105] (Supply Department)

[0106] like Figure 2 As shown, the supply unit 40 supplies the processing liquid Le or the cleaning liquid Lw to the processed surface of the substrate W, that is, the surface of the substrate W held by the holding unit 30 opposite to the surface facing the workbench 11. The supply unit 40 includes a processing liquid supply unit 411 for supplying the processing liquid Le and a cleaning liquid supply unit 412 for supplying the cleaning liquid Lw.

[0107] The treatment liquid supply unit 411 supplies a phosphoric acid solution as the treatment liquid Le. The cleaning liquid supply unit 412 supplies pure water as the cleaning liquid Lw. The treatment liquid supply unit 411 and the cleaning liquid supply unit 412 have a liquid tank 41 a storing the treatment liquid Le and the cleaning liquid Lw, respectively.

[0108] Each liquid tank 41a is connected to a supply pipe 41b. The front end of the supply pipe 41b faces the substrate W held by the holding unit 30. Thus, the processing liquid Le from each liquid tank 41a is supplied to the processing surface of the substrate W through the supply pipe 41b.

[0109] A valve 41c and a flow meter 41d are provided in each supply pipe 41b. The valve 41c has a flow rate regulating function and an ON / OFF function. Each valve 41c adjusts the amount of the processing liquid Le and the cleaning liquid Lw flowing from the corresponding liquid tank 41a to the supply pipe 41b. In addition, a valve 41e is also provided in the supply pipe 41b of the cleaning liquid Lw from the liquid tank 41a of the cleaning liquid supply part 412 toward the substrate W. The valve 41e has a flow rate regulating function and an ON / OFF function. The valve 41e adjusts the ejection amount of the cleaning liquid Lw near the ejection port 50a described later. The amount of the processing liquid Le and the cleaning liquid Lw flowing in each supply pipe 41b is detected by the corresponding flow meter 41d. In addition, the generation device and generation method of the processing liquid Le and the cleaning liquid Lw stored in each liquid tank 41a are not limited to a specific generation device and generation method.

[0110] (plate)

[0111] The plate 50 is a member that is disposed at a position facing the processed surface of the substrate W and is movable in a direction of advance and retreat relative to the substrate W. The surface of the plate 50 that faces the substrate W and the workbench 11 is a facing surface 51. The plate 50 is a circular plate, and its bottom surface is a circular flat facing surface 51. The facing surface 51 is concentric with the rotation center of the substrate W and has a larger diameter than the substrate W. That is, the facing surface 51 is of a size that covers the entire processed surface of the substrate W in a non-contact manner. The plate 50 is formed of quartz. A flange 50b that expands outward is formed on the periphery of the upper portion of the plate 50.

[0112] In order to achieve both heat resistance and liquid resistance, the plate 50 may have a double-layer structure. That is, the base may be formed of a heat-resistant material, and the periphery thereof may be covered with a material resistant to the treatment liquid Le. For example, quartz may be used as the base, and a cover of a fluorine-based resin such as PTFE or PCTFE may be formed around the base to form the plate 50.

[0113] The plate 50 is provided with two ejection ports 50a through which the front ends of the two supply pipes 41b are inserted and which are exposed toward the substrate W. The two ejection ports 50a are offset from the axis of rotation of the rotating body 10. This is because as the substrate W rotates, the portion of the substrate W facing the ejection ports 50a changes gradually, thereby contributing to uniformization of the temperature of the processing liquid Le.

[0114] (Heating unit)

[0115] The heating unit 60 is provided on the plate 50 to heat the processing liquid Le supplied to the processing surface of the substrate W. The heating unit 60 of this embodiment is a heater 61 that generates heat by energizing. A plurality of heaters 61 are provided at different positions in the horizontal direction of the plate 50. For example, the heater 61 includes three heating plates that can control the heat generation individually. That is, Fig. 9 As shown, three circular heating plates with different diameters are arranged concentrically. According to this heater 61, by controlling the heat generation of the three concentrically arranged heating plates individually, the temperature of the heater 61 can be changed for each part of the concentric circle, and the temperature distribution of the processing liquid Le can be changed. In addition, in order to suppress the temperature drop on the outer peripheral side of the substrate W, the diameter of the heating part 60 is preferably a size covering the substrate W, that is, greater than the diameter of the substrate W (equal to or larger than the diameter). In addition, the so-called heating of the processing liquid Le supplied to the processed surface of the substrate W also includes the form of heating the substrate W and indirectly heating the processing liquid Le via the substrate W.

[0116] (Detection Department)

[0117] The detection unit 70 detects the temperature of the plate 50. As the detection unit 70, for example, a thermocouple, a temperature measuring resistor, etc. can be used. The detection unit 70 is provided in the heating unit 60 built into the plate 50. A plurality of detection units 70 are provided at different positions in the radial direction of the plate 50. For example, three detection units 70 are provided corresponding to the three heating plates of the heater 61.

[0118] (Driver)

[0119] The driving part 80 is a mechanism for advancing and retreating the plate 50 relative to the substrate W. The driving part 80 includes a support part 81, an arm 82, and an advancing and retreating mechanism 83. The support part 81 is an annular member, and the plate 50 is inserted into the inner side thereof, and the flange 50b abuts against the upper part, thereby horizontally supporting the plate 50. The arm 82 is a member having one end fixed to the support part 81 and extending in the horizontal direction.

[0120] The advance / retract mechanism 83 is erected on the stage and is a mechanism for moving the plate 50 in a direction close to and away from the substrate W via the arm 82. The advance / retract mechanism 83 of this embodiment has a movable portion that moves in a direction parallel to the axis of the rotating body 10, and the other end of the arm 82 is attached to the movable portion. The advance / retract mechanism 83 can be applied to various mechanisms that move the movable portion, such as a cylinder and a ball screw mechanism, but the details are omitted.

[0121] The advance and retreat mechanism 83 moves the plate 50 to a standby position, a cleaning position, and a processing position. Figure 1 As shown in FIG. 1 , the standby position is a position where the gap between the facing surface 51 and the rotating body 10 allows the substrate W to be carried in and out. Figure 3 As shown in FIG. 1 , the cleaning position is a position where the cleaning portion 90 can be inserted into the gap between the facing surface 51 and the rotating body 10 and the contact portion 93a can contact the facing surface 51. Figure 4 As shown, the cleaning position is a position where the cleaning liquid Lw supplied to the substrate W does not adhere to the facing surface 51 .

[0122] like Figure 2 As shown in FIG. 1 , the processing position is a position where the processing liquid Le flows between the facing surface 51 and the processed surface, and the processed surface is processed while being heated by the heating unit 60. In the present embodiment, the plate 50 is lowered to a position where a gap d is formed between the plate 50 and the processed surface of the substrate W. The gap d is, for example, less than 4 mm, but is maintained to leave a gap of about 2 mm between the plate 50 and the processed surface.

[0123] Furthermore, the processing liquid Le is heated to a preset temperature by a heating device (not shown) in the supply unit 40, supplied to the substrate W, and heated by the heating unit 60. Thus, the processing liquid Le supplied to the substrate W can be spread over the entire processing surface of the substrate W while maintaining the preset temperature. In particular, by setting the heater 61 on the peripheral side to a high temperature, the temperature of the processing liquid Le on the peripheral side of the substrate W, which is prone to temperature drop, can be increased.

[0124] (Cleaning Department)

[0125] The cleaning unit 90 cleans the facing surface 51 of the plate 50 that faces the processed surface. The cleaning unit 90 cleans the facing surface 51 between the rotating body 10 that holds the substrate W by the holding unit 30 and the plate 50. That is, the cleaning unit 90 of this embodiment cleans the facing surface 51 of the plate 50 at a cleaning position that is common to the processing position where the substrate W is processed and the position in the horizontal direction.

[0126] like Figures 5 to 9 As shown in FIG. 1 , the cleaning section 90 includes a support 91, a liquid supply section 92, a wiping section 93, a liquid receiving section 94, a moving mechanism 95, a support 96, and an adjustment section 97. Figure 5 In the embodiment, the wiping portion 93 described later is omitted. Figure 5 As shown in the plan view of , the support 91 is a rod-shaped member arranged parallel to the facing surface 51 of the plate 50. The support 91 supports the liquid supply part 92 described later. The length direction of the support 91 is longer than the diameter of the facing surface 51. The support 91 is formed of a material having heat resistance and liquid resistance, such as Polyether Ether Ketone (PEEK).

[0127] The liquid supply unit 92 supplies the cleaning liquid Lp to the facing surface 51. Figure 5 As shown in FIG. 5 , the liquid supply section 92 has a plurality of supply ports 92a arranged in a direction parallel to the facing surface 51. Figure 7 As shown, the supply port 92a is a nozzle arranged in parallel with the wiping portion 93 between a pair of wiping portions 93 described later and blows pure water as the cleaning liquid Lp toward the facing surface 51. The plurality of supply ports 92a are arranged at equal intervals. Therefore, the liquid supply portion 92 can blow the cleaning liquid Lp uniformly in the linear direction.

[0128] like Figure 3As shown, the supply port 92a is connected to the liquid tank 41a of the cleaning liquid supply unit 412, and is connected to the liquid tank 41a from the supply pipe 41b via the branch pipe 92b. A valve 92c is provided on the branch pipe 92b. The valve 92c has a flow rate adjustment function and an ON / OFF function. The valve 92c controls the start and stop of the supply of the cleaning liquid Lp, the ejection height of the cleaning liquid Lp, and the ejection amount. In addition, the cleaning liquid Lp is not limited to pure water. For example, it can also be hydrofluoric acid (aqueous solution of hydrogen fluoride) and the like. In addition, the cleaning liquid Lp can also be different from the cleaning liquid Lw supplied by the supply unit 40. In this way, when the cleaning liquid Lp supplied is different from the cleaning liquid Lw, a cleaning liquid supply unit for supplying the cleaning liquid Lp is provided separately from the cleaning liquid supply unit 412 for supplying the cleaning liquid Lw.

[0129] like Figure 3 As shown, the wiping portion 93 contacts the facing surface 51 to wipe the cleaning liquid Lp supplied by the liquid supply portion 92. In addition, the wiping portion 93 contacts the facing surface 51 to wipe the processing liquid Le and the cleaning liquid Lp together. The wiping portion 93 extends in a direction parallel to the facing surface 51, and has a length that is in contact with the full length of the facing surface 51. The full length of the facing surface 51 mentioned here is the diameter of the circular facing surface 51. That is, the length direction of the wiping portion 93 is a length greater than the diameter of the facing surface 51. The wiping portion 93 is configured to be movable by a moving mechanism 95 described later, but is arranged in front and behind the liquid supply portion 92 in the moving direction. That is, a pair of wiping portions 93 are arranged parallel to the length direction, separated by a plurality of supply ports 92a arranged in the length direction of the support body 91. In the present embodiment, the wiping portion 93 performs reciprocating motion based on swinging in one direction and swinging in the opposite direction. However, the front and rear wiping portions 93 are opposite in the swinging in one direction and the swinging in the opposite direction.

[0130] like Figure 6 and Figure 7 As shown, a pair of wiping parts 93 respectively include a contact part 93a, a cover part 93b, and a support part 93c. The contact part 93a contacts by imitating the deformation of the facing surface 51. As a result, the contact part 93a in contact with the facing surface 51 has a slight inclination or deformation on either or both of the facing surface 51 and can contact the facing surface 51 over the entire length even when the two are not completely parallel. The contact part 93a of this embodiment is a mesh component. The contact part 93a is formed of a mesh of fluororesin. The cover part 93b has a U-shaped cross-section and is a component that covers the support part 93c and supports the contact part 93a. The contact part 93a is supported in a manner that covers the cover part 93b. Therefore, the contact part 93a faces the facing surface 51 with a curved surface and contacts the facing surface 51 near the vertex of the curved surface.

[0131] Furthermore, the net used for the contact portion 93a is a sheet-like member and can be easily replaced. When the net is deteriorated or particles wiped from the facing surface 51 accumulate after being used a predetermined number of times, it can be replaced immediately, thereby preventing the net from becoming a particle source.

[0132] The cover portion 93b has elasticity, and when the contact portion 93a is pushed to the facing surface 51 and contacts, it deforms together with the contact portion 93a. Since the contact portion 93a is a sheet-like member, there is a limit to the amount of deformation of the contact portion 93a alone. In contrast, in the present embodiment, the contact portion 93a is supported by the support portion 93c via the deformed cover portion 93b, so compared with the case where the contact portion 93a is directly supported by the support portion 93c, the amount of deformation of the contact portion 93a can be increased, and the contact portion 93a can be brought into close contact with the facing surface 51.

[0133] like Figure 6 As shown in the cross-sectional view of , a support portion 93c is provided in the wiping portion 93. The support portion 93c is a rod-shaped member having an elliptical cross-section and extending in a direction parallel to the facing surface 51, and having a length in the longitudinal direction greater than the diameter of the facing surface 51. A pair of support portions 93c are provided at positions across the liquid supply portion 92. The support portion 93c is formed of a heat-resistant and liquid-resistant material, such as PEEK (Polyether Ether Ketone).

[0134] The support portion 93c directly or indirectly supports the contact portion 93a and the cover portion 93b. Figure 8 As shown, a bearing portion 93e which is engaged with the support column 96 described later is provided at the center of the length direction of the support portion 93c. The bearing portion 93e is a semicircular recess. By engaging the bearing portion 93e with the support column 96, the wiping portion 93 can be supported rotatably with the support column 96 extending in a direction parallel to the facing surface 51 as a rotation axis.

[0135] The liquid receiving portion 94 receives the cleaning liquid Lp from the liquid supply portion 92 and the wiping portion 93, and prevents the cleaning liquid Lp from falling onto the substrate W. Figures 5 to 8 As shown in FIG. 1 , the liquid receiving portion 94 is a box-shaped member that accommodates the support body 91, the liquid supply portion 92, the wiping portion 93, the support column 96, and the adjustment portion 97 described later. The liquid receiving portion 94 is a rectangular parallelepiped container with an upper opening, and the support body 91 is arranged inside so as to form a gap into which the cleaning liquid Lp dropped from the wiping portion 93 flows. Figure 5 As shown, a discharge hole 94a and a discharge pipe 94b for discharging the cleaning liquid Lp are provided in the liquid receiving portion 94. The discharge pipe 94b is a pipe connected to the discharge hole 94a provided at the lower portion of the liquid receiving portion 94, and is connected to a discharge flow path not shown. In addition, it is preferable that the side surface of the liquid receiving portion 94 is made higher than the supply port 92a in order to reduce the scattering or leakage of the cleaning liquid Lp.

[0136] The moving mechanism 95 moves the wiping portion 93 along the facing surface 51. The moving mechanism 95 includes an arm 95a and a swinging portion 95b. The arm 95a is a member extending in a direction parallel to the facing surface 51, and one end of the liquid receiving portion 94 is attached to one end. Therefore, the moving mechanism 95 of this embodiment moves the support 91, the liquid supply portion 92, the wiping portion 93, the support column 96, and the adjustment portion 97 provided inside the liquid receiving portion 94 along the facing surface 51.

[0137] The swinging portion 95b is provided at a position deviated from the facing surface 51, and causes the wiping portion 93 to swing in a circular arc trajectory with the end portion of the other end of the arm 95a being mounted as an axis. More specifically, the swinging portion 95b causes the wiping portion 93 to reciprocate in parallel with the facing surface 51 until it reaches a turning position outside the facing surface 51 from a retreat position deviated from the facing surface 51 in a plan view through a portion facing the outer periphery of the facing surface 51, and then moves in the opposite direction and returns to the retreat position.

[0138] The swinging part 95b has a support shaft extending from the other end of the arm 95a in a direction perpendicular to the facing surface 51, and a motor (not shown) as a driving source for swinging around the support shaft. When the arm 95a is not cleaning the facing surface 51, it is positioned so that the wiping part 93 is in the retreat position. In addition, the wiping part 93 is supported by the moving mechanism 95 at a height that contacts the facing surface 51 of the plate 50 located at the cleaning position.

[0139] like Figure 5 , Figure 6 and Figure 8 As shown, the support 96 is a round rod-shaped member provided at the center in the longitudinal direction of the wiping portion 93. Figure 6 As shown, the support 96 is supported by the upper part of the support body 91 and the inner side surface of the liquid receiving part 94, and preferably a gap is left between the support 96 and the bottom surface of the liquid receiving part 94. The cleaning liquid Lp dropped from the wiping part 93 flows into the gap, and the cleaning liquid Lp can be easily discharged to the discharge hole 94a and the discharge pipe 94b. Figure 8 As shown, the support 96 supports the wiping portion 93 so as to be rotatable about an axis extending in a direction parallel to the facing surface 51. That is, the support 96 is engaged with the bearing portion 93e and supported in a state where the wiping portion 93 is rotatable so as to be in contact with the facing surface 51 in parallel with the support 96 as a fulcrum.

[0140] The adjusting portion 97 is adjusted so that the facing surface 51 and the contact portion 93a of the wiping portion 93 are in parallel contact with each other by the rotation of the wiping portion 93. The adjusting portion 97 includes an elastic member that rotates the wiping portion 93 by elastic force. Figure 5 and Figure 8As shown, the adjustment part 97 is provided on the lower surface of the support part 93c at both ends of each wiping part 93. The adjustment part 97 is provided with an inclined part 97a and a fixing part 97b. The inclined part 97a is a plate-shaped member, which is inclined from the lower surface of the support part 93c toward the bottom surface of the liquid receiving part 94. The inclined part 97a is arranged at a position where its upper end can be connected to / separated from the lower surface of the support part 93c. The fixing part 97b fixes the lower end of the inclined part 97a. Figure 7 As shown in FIG. 1 , the fixing portion 97b is supported by the side surface of the support body 91 and the inner side surface and bottom surface of the liquid receiving portion 94. In addition, the adjusting portion 97 is preferably provided with a gap between the lower end of the inclined portion 97a and the bottom surface of the liquid receiving portion 94. The cleaning liquid Lp dropped from the wiping portion 93 flows into the gap, and the cleaning liquid Lp can be easily discharged to the discharge hole 94a and the discharge pipe 94b.

[0141] (Control Department)

[0142] The control unit 100 controls each unit of the substrate processing apparatus 1. In order to realize various functions of the substrate processing apparatus 1, the control unit 100 includes a processor for executing a program, a memory for storing various information such as a program or operation conditions, and a drive circuit for driving each element. That is, the control unit 100 includes a mechanism control unit 110 for controlling the rotating mechanism 20, the holding unit 30, the supply unit 40, the heating unit 60, the driving unit 80, the cleaning unit 90, etc.

[0143] In addition, the control unit 100 of the present embodiment has a heating control unit 120. The heating control unit 120 controls the temperature of the heating unit 60 according to the temperature of the plate 50 measured by the detection unit 70. That is, the heating control unit 120 performs feedback control to control the output of the heater 61 according to the temperature of the plate 50. For example, when the average value of the temperatures measured by the plurality of detection units 70 is lower than a predetermined temperature, the temperature of the heater 61 is increased. Furthermore, when the temperature measured by each detection unit 70 is lower than a predetermined temperature, the temperature of the heater 61 corresponding to the detection unit 70 may also be increased. In this case, for example, each detection unit 70 corresponds to the heater 61 to which the detection unit 70 is respectively provided.

[0144] [action]

[0145] In the Figures 1 to 9 Based on Fig.10 The operation of the substrate processing apparatus 1 according to the present embodiment described above is explained in the flowchart. In addition, a substrate processing method and a substrate manufacturing method for processing a substrate W according to the following flow are also one aspect of the present embodiment.

[0146] First, if Figure 1As shown, the plate 50 is located at the upper standby position. At this time, a gap is provided between the plate 50 and the stage 11 into which a substrate W supported by a hand of a transfer robot (not shown) can be carried.

[0147] In addition, by energizing the heater 61 of the heating unit 60 in advance, the facing surface 51 of the plate 50 is heated and maintained at a predetermined temperature (for example, a temperature within a temperature range of 180° C. to 225° C.). In addition, for example, the peripheral area of ​​the substrate W has the largest temperature drop due to heat dissipation, so the heater 61 in the peripheral area can be heated to a higher temperature than other areas.

[0148] In this state, in the previous process, the substrate W loaded with pure water on the surface to be processed is carried between the plate 50 and the rotating body 10 by the hand of the transfer robot, and its edge is supported by a plurality of holding pins 31, thereby being held on the workbench 11 of the rotating body 10 (step S01). At this time, the center of the substrate W is positioned so as to coincide with the axis of rotation of the rotating body 10.

[0149] The rotating body 10 rotates at a relatively low predetermined speed (for example, about 50 rpm). As a result, the substrate W rotates together with the holding part 30 at the predetermined speed (step S02). Figure 2 As shown, the plate 50 is lowered to a processing position where a predetermined distance d (for example, 4 mm or less) is formed between the plate 50 and the processing surface of the substrate W (step S03).

[0150] The processing liquid supply unit 411 supplies the processing liquid Le to the processing surface of the substrate W, and starts to measure the temperature of the plate 50 using the detection unit 70 (step S04). The temperature measurement is always performed during the supply of the processing liquid Le. As described above, the processing liquid Le is heated in advance in the supply unit 40. As the processing liquid Le moves sequentially toward the outer periphery of the rotating substrate W, the pure water on the processing surface of the substrate W is replaced by the phosphoric acid solution as the processing liquid Le, and the nitride film is removed by etching.

[0151] The heat of the processing liquid Le supplied to the vicinity of the center of the substrate W is easily dissipated as it moves toward the periphery of the substrate W. However, in this embodiment, the plate 50 is close to the substrate W by a distance d, so the processing liquid Le is heated by the heater 61, and the decrease in the processing rate due to the temperature drop can be suppressed. For example, the temperature of the phosphoric acid solution as the processing liquid Le is preferably maintained at about 150° C. to 160° C.

[0152] As described above, the temperature of the plate 50 being processed is measured by the detection unit 70. Based on the measured temperature, the heating control unit 120 controls the temperature of the heater 61. That is, when the average value of the temperature detected by the detection unit 70 decreases, the temperature of all the heaters 61 is increased. Alternatively, the temperature of the heater 61 in the area where the temperature detected by the detection unit 70 decreases is increased.

[0153] When the predetermined processing time has elapsed (YES in step S05), the processing liquid supply unit 411 stops supplying the processing liquid Le (step S06). Figure 3 As shown, the plate 50 rises to a cleaning position above the processing position (step S07).

[0154] Then, if Fig. 9 As shown in FIG. 1 , the swinging portion 95b of the moving mechanism 95 swings the arm 95a, thereby performing a cleaning process in which the wiping portion 93 reciprocates to wipe the facing surface 51 (step S08). That is, while the supply port 92a of the liquid supply portion 92 sprays the cleaning liquid Lp, the wiping portion 93 in contact with the facing surface 51 swings together. The wiping portion 93 wipes the entire facing surface 51 from the outside of the facing surface 51 and moves to the outside of the facing surface 51, thereby wiping the processing liquid Le and the cleaning liquid Lp on the facing surface 51 at the same time.

[0155] In order to wipe the processing liquid Le and the cleaning liquid Lp from the facing surface 51, if the wiping portion 93 is brought as a whole close to the facing surface 51, then assuming that the wiping portion 93 is inclined relative to the facing surface 51, the portion of the wiping portion 93 close to the facing surface 51 first hits the facing surface 51. Thereafter, if the wiping portion 93 is brought further close to the facing surface 51, the adjusting portion 97 on the side in contact with the facing surface 51 is elastically deformed to prevent the wiping portion 93 in contact with the facing surface 51 from further approaching the facing surface 51. In this state, if the wiping portion 93 is brought as a whole close to the facing surface 51, only the side of the wiping portion 93 away from the facing surface 51 moves toward the facing surface 51, and as a result, the wiping portion 93 rotates with the side that first abuts against the facing surface 51 as a force point, and the inclination of the wiping portion 93 relative to the facing surface 51 is eliminated and the wiping portion 93 is located in a position parallel to the facing surface.

[0156] When the wiping unit 93 repeats the reciprocating motion and a predetermined time has elapsed (Yes in step S09 ), the discharge of the cleaning liquid Lp from the supply port 92 a is stopped, and the wiping unit 93 moves to the retreat position and stops (step S10 ).

[0157] Then, if Figure 4 As shown, the cleaning liquid supply unit 412 supplies the cleaning liquid Lw from the plate 50 located at the cleaning position to the processed surface of the substrate W (step S11). When the cleaning liquid Lw is supplied to the processed surface of the rotating substrate W, the cleaning liquid Lw moves sequentially toward the outer periphery of the substrate W, thereby washing away the processing liquid Le on the processed surface of the substrate W. Then, when the prescribed cleaning time has passed (yes in step S12), the cleaning liquid supply unit 412 stops supplying the cleaning liquid Lw (step S13).

[0158] The substrate W stops rotating (step S14), and the plate 50 rises to the standby position (step S15). Then, the hand of the transport robot is inserted under the substrate W, the holding portion 30 releases the substrate W, and the hand of the transport robot carries out the substrate W (step S16).

[0159] In addition, the cleaning position and the standby position do not necessarily need to be different. When the cleaning liquid Lw is supplied to the substrate W, the position of the plate 50 may be located at the standby position, and when the substrate W is carried in and out, the position of the plate 50 may be located at the cleaning position. That is, the two positions may not be clearly distinguished, and the carrying in and out of the substrate W, the supply of the cleaning liquid Lw, and the wiping of the facing surface 51 may be performed at the same position.

[0160] [Effect]

[0161] (1) As described above, the substrate processing device 1 of the present embodiment comprises: a rotating body 10, which rotates the substrate W held by the holding portion 30; a processing liquid supply portion 411, which supplies the processing liquid Le to the processed surface of the substrate W; a plate 50, which is arranged at a position opposite to the processed surface; a heating portion 60, which is arranged on the plate 50, which heats the processing liquid Le supplied to the processed surface of the substrate W; and a cleaning portion 90, which cleans the opposing surface 51 of the plate 50 that is opposite to the processed surface.

[0162] The cleaning portion 90 includes: a liquid supply portion 92 for supplying cleaning liquid Lp to the opposing surface 51; a wiping portion 93 for contacting the opposing surface 51 to wipe the cleaning liquid Lp supplied by the liquid supply portion 92; a support 96 for supporting the wiping portion 93 so that it can rotate around an axis extending in a direction parallel to the opposing surface 51; and a moving mechanism 95 for moving the wiping portion 93 along the opposing surface 51.

[0163] Therefore, after the substrate W is processed by the processing liquid Le supplied from the processing liquid supply unit 411, the cleaning liquid Lp is supplied to the facing surface 51 by the liquid supply unit 92, and the moving mechanism 95 makes the wiping unit 93 contact with the facing surface 51 and moves along the facing surface 51, thereby wiping the processing liquid Le and the cleaning liquid Lp together. Therefore, the processing liquid Le remaining on the facing surface 51 of the plate 50 can be removed to maintain the cleanliness of the plate 50. In addition, the temperature drop of the facing surface 51 caused by the residue of the processing liquid Le and the cleaning liquid Lp can be suppressed. Therefore, after the cleaning of the plate 50, the drop in the processing rate can be suppressed in the processing of the next substrate W. In this way, the temperature change of the plate 50 for each substrate W to be processed can be suppressed, and the change of the processing rate of each substrate W caused by the temperature change of the plate 50 can be suppressed.

[0164] In addition, the support 96 supports the wiping part 93 so that it can rotate about an axis extending in a direction parallel to the facing surface 51. Therefore, compared with the case where the wiping part 93 is fixed, the wiping part 93 can be brought into contact with the facing surface 51 evenly, and the facing surface 51 can be cleaned evenly.

[0165] (2) The adjusting portion 97 is adjusted so that the facing surface 51 and the contact portion 93a of the wiping portion 93 are in parallel contact with each other by the rotation of the wiping portion 93. Therefore, the entire facing surface 51 can be brought into contact with the wiping portion 93 with a small load, thereby suppressing damage to the cleaning portion 90. In addition, the adjusting portion 97 is adjusted so that the facing surface 51 and the contact portion 93a are in parallel contact with each other according to the inclination of the facing surface 51 or the wiping portion 93, so that the wiping portion 93 can be brought into contact with the facing surface 51 more uniformly.

[0166] (3) The adjusting portion 97 has an elastic member, which is provided on the wiping portion 93 and rotates the wiping portion 93 by elastic force. Therefore, the inclination of the wiping portion 93 can be adjusted by elastic force while wiping the droplets on the facing surface 51, so the cleaning efficiency of the facing surface 51 of the plate is improved. In addition, the adjusting portion 97 rotates the wiping portion 93 so that the facing surface 51 and the contact portion 93a are in parallel contact by the elastic force of the elastic member, so the process of detecting the inclination can be simplified.

[0167] (4) The support column 96 is provided at the center in the longitudinal direction of the wiping portion 93. Therefore, regardless of the inclination direction of the facing surface 51 or the wiping portion 93, the inclination of the wiping portion 93 can be easily adjusted with a constant pressure.

[0168] (5) A plurality of wiping parts 93 are provided. Therefore, a plurality of wiping parts 93 can perform wiping multiple times in one wiping action, so that the cleanliness of the plate 50 can be further improved.

[0169] (6) The moving mechanism 95 moves the liquid supply unit 92 along the facing surface 51, and the wiping unit 93 is arranged at a position further behind the liquid supply unit 92 in the moving direction based on the moving mechanism 95. Therefore, the wiping unit 93 wipes and removes the cleaning liquid Lp and the processing liquid Le together immediately after the cleaning liquid Lp is supplied by the liquid supply unit 92 moving along the facing surface 51. In this way, the cleaning liquid Lp can be removed immediately after it is supplied, thereby shortening the time that the cleaning liquid Lp is in contact with the facing surface 51, and preventing the temperature of the plate 50 from decreasing. In addition, if it is evaporated and dried, the temperature decreases due to the evaporation heat, but by wiping the attached cleaning liquid Lp, the temperature decrease can be suppressed.

[0170] [Modifications]

[0171] (1) Fig.11As shown, the support 96 may also be provided at the other end of the wiping portion 93 in the longitudinal direction of the wiping portion 93. In this case, the moving mechanism 95 supports one end side of the wiping portion 93 and moves it along the facing surface 51. In this way, when the wiping portion 93 is supported by one end side, the wiping portion 93 tilts more as it moves away from the moving mechanism 95. Therefore, by providing the support 96 at the other end of the wiping portion 93 in such a manner that the distance between the position (point of action) with a large tilt and the support 96 (fulcrum) becomes closer, the adjustment portion 97 can easily adjust the tilt with a minimum elastic force.

[0172] (2) The member of the adjustment portion 97 is not limited to an elastic member. Fig.12 As shown in the figure, the following structure may be adopted: the inclination of the wiping part 93 is detected in advance by a sensor or the like, and according to the detected inclination, only one end of a movable pin provided at the lower end of the wiping part 93 is raised or lowered, thereby adjusting the inclination. In addition, the movable pin may be raised or lowered by a linear actuator such as a ball screw, for example. In this way, the inclination of the wiping part 93 can be adjusted more accurately.

[0173] (3) There is no limitation on the location or number of the adjustment unit 97. Fig.13 As shown in FIG. 1 , when the moving mechanism 95 supports one end side of the wiping portion 93 so that it swings, a support 96 may be provided at one end side of the wiping portion 93, and an adjustment portion 97 may be provided at the other end side of the wiping portion 93. In this case, it is preferred that the wiping portion 93 is preliminarily formed with an inclination such that the height increases from one end side of the wiping portion 93 toward the other end side. Fig.14 As shown, when the moving mechanism 95 supports one end side of the wiping portion 93 and swings, the adjustment portion 97 may be provided only on one end side of the wiping portion 93. In this case, it is preferred that the wiping portion 93 is preliminarily formed with an inclination that decreases in height from one end side of the wiping portion 93 toward the other end side.

[0174] (4) The shape of the adjustment portion 97 is not limited to the shape exemplified above, and may be, for example, a Z-shape or a spring shape (compression coil spring, leaf spring, etc.).

[0175] (5) The location of the liquid supply unit 92 is not limited. For example, the liquid supply unit 92 may be disposed outside the facing surface 51 of the plate 50 in a plan view and may be disposed so as to eject the cleaning liquid Lp forward of the wiping unit 93 relative to the moving direction of the wiping unit 93.

[0176] (6) A plurality of pillars 96 may be provided corresponding to the plurality of wiping parts 93. In addition, the plurality of pillars 96 may be provided at different positions in a direction perpendicular to the longitudinal direction of the wiping part 93. Thus, the plurality of wiping parts 93 corresponding to the plurality of pillars 96 provided at different positions can easily wipe the processing liquid Le and the cleaning liquid Lp according to various inclinations of the facing surface 51 or the wiping part 93, thereby reducing leakage during wiping.

[0177] (7) The wiping portion 93 may not include any of the contact portion 93a, the cover portion 93b, and the support portion 93c. For example, the contact portion 93a may be directly attached to the support portion 93c. This makes it possible to easily replace the contact portion 93a.

[0178] (8) The wiping portion 93 only needs to be disposed at a position further rearward than the liquid supply portion 92 in the moving direction by the moving mechanism 95. For example, the wiping portion 93 in front of the liquid supply portion 92 in the moving direction of the pair of wiping portions 93 in the above-described form may be omitted. In this case, after the wiping portion 93 is moved from one peripheral end of the facing surface 51 to the other peripheral end, it is temporarily separated from the facing surface 51 and returned to one peripheral end, and then the wiping portion 93 is brought into contact with the facing surface 51 again and moved from one peripheral end to the other peripheral end, thereby wiping can be repeated.

[0179] In addition, regarding the wiping performed by the wiping unit 93 in the above-described embodiment and the modified example, for processing a substrate W, only one reciprocation (two wipings) may be performed, or only one wiping in one direction may be performed without reciprocation. That is, for example, the processing of the Nth substrate may be performed by clockwise swinging, and the processing of the N+1th substrate may be performed by counterclockwise swinging, and the wiping may be performed once for each processing of the substrate W. In addition, instead of completing the wiping by one reciprocation (= two times), the wiping may be performed three times or an odd number of times.

[0180] In addition, as in the above-described embodiment, even if the wiping section 93 is provided both in front and in the rear of the liquid supply section 92, wiping may be performed in one direction without reciprocating. In this case, the wiping section 93 at the rear is always in contact with the facing surface 51 after receiving the supply of the cleaning liquid Lp. By wiping by the wiping section 93 at the rear, the cleaning operation can be terminated, so that the processing liquid can be prevented from attaching to the facing surface 51 from the wiping section 93 again.

[0181] (9) The cleaning process of wiping the cleaning liquid Lp on the facing surface 51 does not need to be performed immediately after the substrate W is processed with the processing liquid Le. For example, the cleaning process of the facing surface 51 may be performed after the substrate W is processed with the processing liquid Le and before the next substrate W to be processed is loaded.

[0182] (10) The wiping action of the wiping portion 93 may not be swinging. For example, the wiping portion 93 may be moved from one peripheral end of the facing surface 51 to the other peripheral end by a moving mechanism that supports both ends of the liquid receiving portion 94 and moves linearly parallel to the facing surface 51.

[0183] (11) A plurality of cleaning sections 90 may be provided. For example, a plurality of cleaning sections 90 swinging about different axes may be used to clean the entire facing surface 51. In this case, even if the wiping section 93 is not long enough to cover the entire length of the facing surface 51, it is sufficient as long as the entire facing surface 51 can be wiped by the plurality of wiping sections 93.

[0184] (12) The heating section 60 may also be a structure in which each heater 61 includes a heat spreader. In addition, the heating section 60 may also use a heating section that heats the substrate W or the processing liquid Le using light from a halogen lamp or a light emitting diode (LED). The number of heaters 61 in the heating section 60 and the number of detection sections 70 are not limited to the above-described form, and may be one, two, or more than four. In the above-described form, by respectively providing detection sections 70 corresponding to the plurality of heating sections 60, the area where the temperature is measured is made consistent with the area where the temperature is heated, but the number of heating sections 60 and the number of detection sections 70 may not necessarily correspond.

[0185] (13) The processing of the substrate processing apparatus 1 is not limited to the above-mentioned processing contents and processing liquid Le as long as the temperature of the processing liquid Le and the substrate W affects the processing rate. The substrate W and film to be processed are also not limited to the above-mentioned substrates and films.

[0186] [Other embodiments]

[0187] The above describes the embodiments of the present invention and the variations of each part, but the embodiments or variations of each part are provided as an example and are not intended to limit the scope of the invention. The novel embodiments can be implemented in various other ways, and various omissions, substitutions, combinations, and changes can be made without departing from the scope of the invention. These embodiments or their variations are included in the scope or the main idea of ​​the invention, and are included in the invention described in the claims.

Claims

1. A substrate processing device, comprising: a rotating body that rotates the substrate held by the holding portion; A processing liquid supplying unit supplies processing liquid to the processed surface of the substrate; A plate, arranged at a position facing the treated surface; a heating unit provided on the plate and heating the processing liquid supplied to the processed surface of the substrate; and A cleaning section cleans the surface of the plate facing the treated surface. The cleaning unit comprises: A liquid supplying part, supplying cleaning liquid to the facing surfaces; a wiping portion contacting the facing surface to wipe the cleaning liquid supplied by the liquid supply portion; A support supporting the wiping portion so as to be rotatable about an axis extending in a direction parallel to the facing surface as a rotation axis; as well as The moving mechanism moves the wiping part along the facing surface. 2 . The substrate processing apparatus according to claim 1 , further comprising an adjustment unit configured to make the facing surface contact with a contact portion of the wiping unit in parallel by the rotation of the wiping unit.

3. The substrate processing apparatus according to claim 2, wherein: The adjusting portion has an elastic member, The elastic member is provided on the wiping portion, and causes the wiping portion to rotate by elastic force.

4. The substrate processing apparatus according to claim 3, wherein: The support column is provided at the center in the longitudinal direction of the wiping portion.

5. The substrate processing apparatus according to claim 3, wherein: The moving mechanism supports one end side of the wiping portion and moves it along the facing surface. The support column is disposed near the other end of the wiping portion in the length direction of the wiping portion.

6. The substrate processing apparatus according to claim 1, wherein: The wiping part is provided in plurality.

7. The substrate processing apparatus according to claim 1, wherein: The moving mechanism moves the liquid supply portion along the facing surface. The wiping portion is provided behind the liquid supply portion in a moving direction by the moving mechanism.

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