Graphite base disc capable of wirelessly measuring temperature and manufacturing method thereof

Abstract

The invention discloses a graphite base plate capable of wireless temperature measurement and a manufacturing method thereof, and the graphite base plate is used for semiconductor epitaxial equipment, and comprises an upper protection layer, a lower protection layer, a third protection layer and a fourth protection layer, the lower protection layer is positioned below the upper protection layer; the circuit carrier layer is positioned between the upper protection layer and the lower protection layer; and the circuit carrier layer performs wireless temperature measurement on the wafer. The graphite base plate can still carry out wireless temperature measurement on the wafer in the wafer machining process, when the wafer rotates along with the graphite base plate, the temperature measuring thermocouples on the graphite base plate coaxially rotate, the temperature measuring thermocouples can measure the temperature of the wafer at different positions on the circumference of the graphite base plate, and the wafer temperature measuring accuracy is improved. The circuit carrier layer is formed by adopting semiconductor manufacturing processes of photoetching, etching and deposition, so that the processing precision of components of the circuit carrier layer is ensured, and the graphite base plate can perform wireless temperature measurement on the wafer more accurately.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a graphite substrate capable of wireless temperature measurement and a manufacturing method thereof. Background Art

[0002] In the semiconductor manufacturing process, non-contact infrared pyrometers are used to measure temperature in quartz process chambers such as semiconductor chemical vapor deposition (CVD) or epitaxial growth (Epi). However, non-contact pyrometers will have temperature measurement deviations over time. Moreover, as the process progresses, a large amount of by-products are deposited around the quartz chamber, especially on the top and bottom of the quartz chamber, which will cause the non-contact infrared pyrometer to partially lose its optical measurement window when measuring the temperature of the wafer, resulting in non-realistic measurement results and greatly reduced process performance.

[0003] In addition, during the wafer processing process, the pyrometer is fixed, but the wafer rotates with the graphite substrate, so the existing technology still has the problem of difficulty in accurately measuring the temperature of one or several points on the wafer surface. Summary of the invention

[0004] The purpose of the present invention is to provide a graphite substrate capable of wireless temperature measurement and a manufacturing method thereof, so as to solve the problem that in the process of wafer processing, the wafer rotates with the graphite substrate, and it is difficult to accurately measure the surface temperature of the wafer in the prior art.

[0005] To achieve the above object, the present invention is implemented through the following technical solutions:

[0006] In one aspect, the present invention provides a graphite substrate capable of wireless temperature measurement, which is used in semiconductor epitaxial equipment, comprising:

[0007] An upper protective layer, the upper surface of which is used to support the wafer;

[0008] a lower protective layer, which is located below the upper protective layer;

[0009] A circuit carrier layer is located between the upper protective layer and the lower protective layer; the circuit carrier layer performs wireless temperature measurement on the wafer.

[0010] Preferably, the circuit carrier layer comprises: a substrate and a plurality of groups of circuits located in the substrate, and the plurality of groups of circuits are evenly arranged in the substrate.

[0011] Preferably, each group of the circuits comprises:

[0012] power supply;

[0013] A memory, connected to the power supply and used to store temperature data;

[0014] A plurality of temperature measuring thermocouples are connected in series and connected to the memory to transfer the measured temperature data to the memory.

[0015] Preferably, the power supply and the memory are both arranged in the edge area of ​​the graphite substrate, and the plurality of temperature measuring thermocouples are arranged in the bearing area of ​​the graphite substrate.

[0016] Preferably, in each group of the circuits: the power supply and the memory are connected via a first connecting line; the memory and the temperature measuring thermocouple, and a plurality of the temperature measuring thermocouples are connected via a second connecting line.

[0017] Preferably, one of the several temperature measuring thermocouples is arranged at the center of the graphite substrate, and the remaining temperature measuring thermocouples are evenly distributed on a plurality of circles concentric with the center of the graphite substrate, and the distance between two adjacent circles is the same.

[0018] Preferably, the circuits are divided into two groups, and the temperature measuring thermocouples in the two groups of the circuits are arranged alternately and at intervals on corresponding circles.

[0019] Preferably, the plurality of temperature measuring thermocouples are all located on a diameter of the graphite base disk.

[0020] Preferably, the circuits are divided into two groups, and the components except the temperature measuring thermocouples in the two groups of circuits are distributed in a centrally symmetrical manner, and the power supply and the memory in each group of circuits form an angle of 90 degrees in the circumferential direction.

[0021] Preferably, the storage is weighted according to the weight of the power supply.

[0022] Preferably, a first counterweight line is provided between different groups of the power supplies and the storage.

[0023] Preferably, a second counterweight wire is provided between two temperature measuring thermocouples in different groups and located at respective ends of the circuit.

[0024] Preferably, the power source is a curved battery.

[0025] On the other hand, the present invention also provides a method for manufacturing a graphite substrate capable of wireless temperature measurement, which is used to manufacture the above-mentioned graphite substrate capable of wireless temperature measurement, and the method comprises:

[0026] forming a lower protective layer;

[0027] forming a circuit carrier layer over the lower protective layer;

[0028] An upper protective layer is deposited over the circuit carrier layer.

[0029] Preferably, an intermediate layer is deposited on top of the lower protective layer, and a plurality of groups of circuits are formed in the intermediate layer by photolithography, etching and deposition to obtain the circuit carrier layer.

[0030] A semiconductor epitaxial device, comprising:

[0031] Cavity;

[0032] The above-mentioned graphite substrate capable of wireless temperature measurement is arranged in the cavity, and is used to carry the wafer and perform wireless temperature measurement on the wafer.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] The present invention provides a graphite substrate capable of wireless temperature measurement and a manufacturing method thereof. A circuit carrier layer is arranged in the graphite substrate, so that the graphite substrate can still accurately measure the temperature of each point of a wafer during wafer processing. When the wafer rotates along with the graphite substrate, the temperature measuring thermocouple on the graphite substrate rotates coaxially, so that the temperature measuring thermocouple can measure the wafer temperature at different positions on its circumference and analyze the uniformity of temperature distribution on the wafer. In addition, the center of gravity is arranged at the center of the circle, and swaying is not easy to occur. In addition, the circuit carrier layer is formed by using semiconductor manufacturing processes of photolithography, etching and deposition, so as to ensure the miniaturization of components of the circuit carrier layer and facilitate manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0036] Figure 1 A schematic diagram of the structure of a graphite substrate capable of wireless temperature measurement provided by an embodiment of the present invention;

[0037] Figure 2a to Figure 2c A top view of each layer in a graphite substrate provided in one embodiment of the present invention;

[0038] Figure 3 A schematic diagram of the structure of a circuit carrier layer provided by an embodiment of the present invention;

[0039] Figure 4 A schematic diagram of a counterweight structure in a circuit carrier layer provided in one embodiment of the present invention;

[0040] Figure 5 A schematic diagram of temperature measurement by a temperature measuring thermocouple during a wafer processing process provided by an embodiment of the present invention;

[0041] Figure 6 A schematic structural diagram of a semiconductor epitaxial device provided in one embodiment of the present invention.

[0042] Explanation of the reference numerals: 100-cavity; 111-upper outer ring heating lamp group; 112-upper inner ring heating lamp group; 121-lower outer ring heating lamp group; 122-lower inner ring heating lamp group; 131-upper dome; 132-lower dome; 150-pyrometer; 161-upper fixing member; 162-lower fixing member; 171-intake member; 172-exhaust member; 181-lining; 182-preheating ring; 190-rotating support member; 200-graphite substrate; 201-upper protective layer; 202-circuit carrier layer; 203-lower protective layer; 210-power supply; 220-first connecting line; 230-memory; 240-second connecting line; 250-temperature measuring thermocouple; 260-first counterweight line; 270-counterweight block; 280-second counterweight line, 290-substrate. DETAILED DESCRIPTION

[0043] The following is combined with Figure 1-6 The graphite substrate capable of wireless temperature measurement and its manufacturing method proposed in the present invention are further described in detail with specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and are not in precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation methods of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that can be produced by the present invention and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0044] On the one hand, reference Figure 1 As shown, this embodiment provides a graphite substrate 200 capable of wireless temperature measurement, which is used in semiconductor epitaxial equipment, and the graphite substrate 200 includes: an upper protective layer 201, whose upper surface is used to carry a wafer, and the surface of the upper protective layer 201 is provided with a pit for carrying the wafer; a lower protective layer 203, which is located below the upper protective layer 201; a circuit carrier layer 202, which is located between the upper protective layer 201 and the lower protective layer 203; the circuit carrier layer 202 performs wireless temperature measurement on the wafer. Preferably, the graphite substrate 200 is circular, the pit is circular, and the center of the pit is concentric with the center of the graphite substrate 200.

[0045] Figure 2a FIG. 2 is a top view of a lower protective layer 203 of a graphite substrate 200 capable of wireless temperature measurement provided by an embodiment, wherein the lower protective layer 203 is a protective layer made of Si (silicon). Figure 2b A top view of a circuit carrier layer of a graphite substrate 200 capable of wireless temperature measurement provided by an embodiment. Figure 2c FIG. 2 is a top view of an upper protective layer 201 of a graphite substrate 200 capable of wireless temperature measurement provided by an embodiment, wherein the upper protective layer 201 is a protective layer made of Si material. Figure 2b As shown, the circuit carrier layer 202 includes: a substrate 290 and a plurality of groups of circuits located in the substrate 290, each group of circuits is independent of each other, and the plurality of groups of circuits are evenly arranged in the substrate 290, that is, the center of gravity of all groups of circuits is located at the center of the graphite substrate 200. The circuits are evenly arranged in the substrate 290 to prevent the graphite substrate 200 from swaying when rotating, thereby avoiding uneven heating of the wafer.

[0046] refer to Figure 3 As shown, each group of the circuits includes: a power supply 210; a memory 230, which is connected to the power supply 210 and used to store temperature data; a plurality of temperature measuring thermocouples 250, which are connected in series and connected to the memory 230 to transfer the measured temperature data to the memory 230. The areas divided on the graphite substrate 200 include: an edge area, which is annular and located at the circumferential edge of the graphite substrate 200; a bearing area, which is located at the center of the edge area, and the bearing area is circular, that is, the area corresponding to the pit on the surface of the upper protective layer 201, which is used to carry the wafer. In this embodiment, the power supply 210 and the memory 230 are both arranged in the edge area of ​​the graphite substrate 200, and the plurality of temperature measuring thermocouples 250 are arranged in the bearing area of ​​the graphite substrate 200. The heat generated by the power supply 210 and the memory 230 will not affect the wafer, which is conducive to ensuring the thermal uniformity of the wafer in the bearing area and the uniform distribution of the center of gravity.

[0047] In each group of the circuits: the power source 210 is connected to the memory 230 via a first connection line 220; the memory 230 is connected to the temperature measuring thermocouple 250, and a plurality of the temperature measuring thermocouples 250 are connected via a second connection line 240. Preferably, the first connection line 220 is arranged in the edge area and extends along the circumferential direction of the edge area, and the second connection line 240 is arranged in the bearing area and extends along the radial direction of the bearing area.

[0048] In this embodiment, one of the temperature measuring thermocouples 250 is arranged at the center (or center of the circle) of the graphite substrate 200, and the remaining temperature measuring thermocouples 250 are evenly distributed on a plurality of circles concentric with the center of the graphite substrate 200, and the distance between two adjacent circles is the same. Preferably, the temperature measuring thermocouples 250 are distributed along the radial direction of the graphite substrate 200, and the temperature measuring thermocouples of different circuits are distributed crosswise at intervals. This ensures that the temperature measuring thermocouples evenly measure the temperature of the wafer on the surface of the graphite substrate 200, and can measure the temperature distribution of the entire wafer, and is conducive to stabilizing the center of gravity at the center of the circle.

[0049] refer to Figure 5 As shown, preferably, the circuit is divided into two groups, the temperature measuring thermocouples are distributed along the radial direction, the number of temperature measuring thermocouples in one circuit is the same as the number of temperature measuring thermocouples in the other circuit, the temperature measuring thermocouples in one circuit and the temperature measuring thermocouples in the other circuit are distributed in a radially spaced and cross-distributed manner, the memory 230 is located in the same radial direction as the temperature measuring thermocouples, and the temperature measuring thermocouples in one circuit are located at the center of the circle. In this embodiment, preferably, three temperature measuring thermocouples 250 are provided in each group, and in the group of the circuits on the left, the rightmost temperature measuring thermocouple 250 is located at the center of the graphite base disk 200, and the other five temperature measuring thermocouples 250 in the two groups of the circuits are evenly distributed on multiple circumferences concentric with the center of the graphite base disk 200, and the distance between two adjacent circumferences is the same.

[0050] The circuit has two groups, and the temperature measuring thermocouples 250 in the two groups are alternately arranged on the corresponding circumference. The circuit has two independent groups, and the positions of the two power supplies 210 and the two memories 230 in the two groups are opposite, and the second connecting lines 240 in the two groups are on the same line.

[0051] Continue to refer Figure 5 As shown, the circuit is divided into two groups, and a plurality of the temperature measuring thermocouples 250 are all located on a diameter of the graphite substrate 200. The components except the temperature measuring thermocouples 250 in the two groups of the circuit are centrally symmetrically distributed, and the power supply 210 and the memory 230 in each group of the circuit form an angle of 90 degrees in the circumferential direction. In this way, the center of gravity of the graphite substrate 200 is ensured to be at the center of the circle when it rotates.

[0052] In order to ensure the stability of the graphite substrate 200 during the rotation process and prevent it from shaking, the circuit carrier layer 202 is weighted in this embodiment. Since the weight of the power source 210 is heavier than the weight of the memory 230, it is necessary to add a weight to the memory 230. The memory 230 is weighted according to the weight of the power source 210. Figure 4As shown, two counterweights 270 are symmetrically arranged on both sides of each storage 230, so that the sum of the weights of the storage 230 and the counterweights 270 on both sides is the same as the power supply 210. Figure 4 As shown, a first counterweight line 260 is provided between the power source 210 and the memory 230 in different groups. A second counterweight line 280 is provided between the two temperature measuring thermocouples 250 at the end of the circuit in different groups. The center of gravity of the graphite base plate 200 is adjusted to the center of its circle by counterweighting to ensure the stability of the rotation process. It should be noted that the first counterweight line 260 and the second counterweight line 280 are only used for counterweighting and do not have any circuit connection with other components in the circuit.

[0053] In this embodiment, the power source 210 is a curved battery. The curved battery has a better center of gravity distribution, so that the graphite substrate 200 is more stable when rotating.

[0054] On the other hand, this embodiment further provides a method for manufacturing a graphite substrate 200 capable of wireless temperature measurement, which is used to manufacture the above-mentioned graphite substrate 200 capable of wireless temperature measurement, and the method comprises:

[0055] Step S1: forming a lower protection layer 203 .

[0056] Step S2: forming a circuit carrier layer 202 on the lower protective layer 203. Specifically, it includes: depositing an intermediate layer on the lower protective layer 203, forming a plurality of circuits in the intermediate layer by photolithography, etching and deposition, and obtaining the circuit carrier layer 202. The circuit carrier layer 202 is formed by using a semiconductor manufacturing process of photolithography, etching and deposition, so as to ensure the miniaturization of components of the circuit carrier layer 202 and facilitate manufacturing. At the same time, the photolithography and etching processes have good repeatability and consistency, which can improve the production efficiency of the graphite substrate 200 in this embodiment.

[0057] Step S3: depositing an upper protective layer 201 on the circuit carrier layer 202. The deposition may be carried out by CVD.

[0058] refer to Figure 6 As shown, this embodiment also provides a semiconductor device, Figure 1-Figure 5 The graphite substrate 200 may be applied to the semiconductor device.

[0059] This article takes the epitaxial device as an example, and the epitaxial device includes: a chamber 100, an upper heating lamp, a lower heating lamp and a graphite substrate 200. The graphite substrate 200 is arranged in the chamber 100, and is used to carry the wafer W and measure the temperature of the wafer W. The upper heating lamp is arranged above the chamber 100, and the lower heating lamp is arranged below the chamber 100, and is used to provide thermal radiation to the wafer W. The chamber 100 includes an upper dome 131, a lower dome 132, a side wall, a liner 181, a preheating ring 182, an upper fixture 161 and a lower fixture 162. The side wall, the upper fixing member 161 and the lower fixing member 162 are all roughly annular, the upper dome 131 is a convex circular shape, and the lower dome 132 is funnel-shaped. The upper dome 131 and the lower dome 132 are both made of transparent quartz. The upper dome 131 is fixed to the top of the side wall by the upper fixing member 161, and the lower dome 132 is fixed to the bottom of the side wall by the lower fixing member 162. The lining 181 is arranged on the inner surface of the side wall; the graphite substrate 200 is supported by the rotating support member 190 and is horizontally arranged in the cavity 100. The rotating support member 190 is used to drive the graphite substrate 200 to rotate and rise and fall; the preheating ring 182 is arranged on the inner surface of the lining 181 and is arranged around the graphite substrate 200. An air inlet is provided on one side of the cavity 100, and an exhaust port opposite to the air inlet is provided on the other side. The air inlet is provided with an air inlet piece 171 for introducing process gas into the cavity 100, and the exhaust port is provided with an exhaust piece 172 for connecting to a pump to discharge the process gas after the process out of the cavity 100.

[0060] The upper heating lamp includes an upper inner ring heating lamp group 112 and an upper outer ring heating lamp group 111. Both the upper inner ring heating lamp group 112 and the upper outer ring heating lamp group 111 are annular. The two rings are concentrically arranged. The center of the circle is concentric with the center of the graphite substrate 200. The upper inner ring heating lamp group 112 is used to heat the inner ring of the wafer, and the upper outer ring heating lamp group 111 is used to heat the outer ring of the wafer. The lower heating lamp includes a lower inner ring heating lamp group 122 and a lower outer ring heating lamp group 121. Both the lower inner ring heating lamp group 122 and the lower outer ring heating lamp group 121 are annular. The two rings are concentrically arranged. The center of the circle is concentric with the center of the graphite substrate 200. The lower inner ring heating lamp group 122 is used to heat the inner ring of the wafer, and the lower outer ring heating lamp group 121 is used to heat the outer ring of the wafer. Pyrometers 150 are also provided above and below the cavity 100 for detecting the process temperature and controlling the power of the upper heating lamp and the lower heating lamp. The pyrometer 150 can be used independently for temperature measurement or used together with the graphite substrate 200.

[0061] During the process, the pyrometer 150 monitors the process temperature of the wafer W in real time and drives the heating lamp to adjust the power. The graphite substrate 200 is set in the chamber 100 to measure the temperature of the wafer in real time and record the temperature data through the memory 230. After the process, the graphite substrate 200 is taken out, and the uniformity of the temperature distribution on the wafer W is analyzed according to the previously recorded temperature data, and the accuracy of the pyrometer 150 can also be judged.

[0062] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0063] In the description of the present invention, it should be understood that the terms "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0064] In the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0065] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0066] In addition, the functional modules in the various embodiments of this document may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0067] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A graphite substrate capable of wireless temperature measurement, characterized in that: It is used for semiconductor epitaxial equipment, including: an upper protective layer, the upper surface of which is used to carry a wafer; a lower protective layer, which is located below the upper protective layer; A circuit carrier layer is located between the upper protective layer and the lower protective layer; the circuit carrier layer performs wireless temperature measurement on the wafer.

2. The graphite substrate capable of wireless temperature measurement according to claim 1, characterized in that: The circuit carrier layer comprises: a substrate and a plurality of groups of circuits located in the substrate, wherein the plurality of groups of circuits are evenly arranged in the substrate.

3. The graphite substrate capable of wireless temperature measurement as claimed in claim 2, characterized in that: Each set of said circuits comprises: power supply; A memory, connected to the power supply and used to store temperature data; A plurality of temperature measuring thermocouples are connected in series and connected to the memory to transfer the measured temperature data to the memory.

4. The graphite substrate capable of wireless temperature measurement as claimed in claim 3, characterized in that: The power source and the memory are both arranged at the edge area of ​​the graphite substrate, and the plurality of temperature measuring thermocouples are arranged at the bearing area of ​​the graphite substrate.

5. The graphite substrate capable of wireless temperature measurement as claimed in claim 3, characterized in that: In each group of the circuits: the power supply is connected to the memory via a first connecting line; the memory and the temperature measuring thermocouple, and a plurality of the temperature measuring thermocouples are connected via a second connecting line.

6. The graphite substrate capable of wireless temperature measurement as claimed in claim 3, characterized in that: One of the temperature measuring thermocouples is arranged at the center of the graphite substrate, and the remaining temperature measuring thermocouples are evenly distributed on a plurality of circles concentric with the center of the graphite substrate, and the distance between two adjacent circles is the same.

7. The graphite substrate capable of wireless temperature measurement according to claim 6, characterized in that: The circuits are divided into two groups, and the temperature measuring thermocouples in the two groups are arranged alternately and at intervals on corresponding circles.

8. The graphite substrate capable of wireless temperature measurement as claimed in claim 7, characterized in that: A plurality of the temperature measuring thermocouples are all located on a diameter of the graphite base disk.

9. The graphite substrate capable of wireless temperature measurement as claimed in claim 3, characterized in that: The circuits are divided into two groups, and the components except the temperature measuring thermocouples in the two groups of circuits are distributed symmetrically with respect to the center, and the power supply and the memory in each group of circuits form an angle of 90 degrees in the circumferential direction.

10. The graphite substrate capable of wireless temperature measurement according to claim 9, characterized in that: The storage is weighted according to the weight of the power source.

11. The graphite substrate capable of wireless temperature measurement according to claim 9, characterized in that: A first counterweight line is arranged between the power supplies and the storage devices of different groups.

12. The graphite substrate capable of wireless temperature measurement according to claim 9, characterized in that: A second counterweight wire is arranged between two temperature measuring thermocouples of different groups and located at respective ends of the circuit.

13. The graphite substrate capable of wireless temperature measurement as claimed in claim 3, characterized in that: The power source is an arc-shaped battery.

14. A method for manufacturing a graphite substrate capable of wireless temperature measurement, characterized in that: It is used to manufacture a graphite substrate capable of wireless temperature measurement as described in any one of claims 1 to 13, and the method comprises: forming a lower protective layer; forming a circuit carrier layer above the lower protective layer; An upper protective layer is deposited over the circuit carrier layer.

15. The method for manufacturing a graphite substrate capable of wireless temperature measurement according to claim 14, characterized in that: An intermediate layer is deposited on the lower protective layer, and a plurality of groups of circuits are formed in the intermediate layer by photolithography, etching and deposition to obtain the circuit carrier layer.

16. A semiconductor epitaxial device, characterized in that: include: Cavity; The graphite substrate capable of wireless temperature measurement as described in any one of claims 1-13 is arranged in the cavity, and is used to carry the wafer and perform wireless temperature measurement on the wafer.

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