Transfer plate, light emitting diode transfer intermediate, light emitting diode transfer method
By using a transfer plate with patterned conductive layer and positioning holes in the manufacturing process of the light emitting diode display panel, the problem of low productivity of the electronic component transfer step in the prior art is solved, and a one-time and efficient transfer of a large number of light emitting diodes is achieved.
Patent Information
- Application Number
- CN202311420330.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-27
- Filing Date
- 2023-10-30
- Publication Date
- 2025-04-01
AI Technical Summary
Prior Art In the manufacturing process of light emitting diode display panels, the productivity of the electronic component transfer step is low, making it difficult to be applicable to the one-time transfer of a large number of light emitting diodes.
A transfer plate including a substrate and a patterned conductive layer is adopted. The patterned conductive layer has a pad area and a positioning area, and the positioning hole is matched with the carrier pin to achieve efficient transfer of the light emitting diode.
This method can realize one-time efficient transfer of a large number of light emitting diodes, simplifying the transfer process and improving production efficiency.
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Figure CN119742266A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to an electronic component transfer plate, an electronic component transfer intermediate, and an electronic component transfer method, and in particular to a light emitting diode transfer plate, a light emitting diode transfer intermediate, and a light emitting diode transfer method. Background Art
[0002] In the manufacturing process of electronic products, there are often related electronic component transfer steps. For example, in the manufacturing process of light-emitting diode display panels (LED displays), corresponding connection terminals are often formed on the light-emitting diode dies first; then, the light-emitting diodes are sequentially placed on a thin-film transistor array substrate (TFT array substrate) through a pick-and-place apparatus, and then the light-emitting diodes on the thin-film transistor array substrate are fixed and electrically connected to the thin-film transistor array substrate.
[0003] However, the above method may have low throughput and is difficult to be applied to the one-time transfer of a large number of light emitting diodes. Summary of the invention
[0004] The present invention is directed to a transfer plate, a light emitting diode transfer intermediate and a light emitting diode transfer method, which are applicable to the transfer of light emitting diodes.
[0005] According to an embodiment of the present invention, the transfer plate includes a substrate and a patterned conductive layer. The patterned conductive layer is located on the substrate. The substrate is made of polyimide.
[0006] According to an embodiment of the present invention, the transfer plate includes a substrate and a patterned conductive layer. The patterned conductive layer is located on the substrate. The substrate includes a positioning hole. The patterned conductive layer includes a pad area and a positioning area. The positioning hole corresponds to the positioning area.
[0007] According to an embodiment of the present invention, a method for transferring an LED includes the following steps: providing a transfer plate, which includes a substrate and a patterned conductive layer located on the substrate; configuring an LED on the transfer plate so that the LED is connected to a pad in the patterned conductive layer; placing the transfer plate with the LED configured thereon on a carrier; removing the substrate on the carrier to expose the pad connected to the LED to the outside; and bonding the pad on the LED to the substrate.
[0008] According to an embodiment of the present invention, the material of the substrate is polyimide, and the step of removing the substrate is performed by removing the substrate through a solvent.
[0009] According to an embodiment of the present invention, the substrate includes a positioning hole.
[0010] According to an embodiment of the present invention, the carrier has pins, and when the transfer plate having the light emitting diodes disposed thereon is placed on the carrier, the pins are inserted into the positioning holes.
[0011] According to one embodiment of the present invention, the patterned conductive layer further includes a positioning area, and the positioning hole corresponds to the positioning area.
[0012] According to an embodiment of the present invention, the carrier has a recessed placement unit, and the light emitting diodes correspond to the placement unit during the process of placing the transfer plate on the carrier.
[0013] According to an embodiment of the present invention, before removing the substrate, there is a first distance between two adjacent LEDs; after bonding the pad to the substrate, there is a second distance between the two adjacent LEDs; and the second distance is greater than the first distance.
[0014] According to an embodiment of the present invention, the light emitting diode transfer intermediate comprises the aforementioned transfer plate and a light emitting diode. The light emitting diode is disposed on the patterned conductive layer.
[0015] Based on the above, the present invention provides a transfer plate, a light emitting diode transfer intermediate and a light emitting diode transfer method, which can be applied to the one-time transfer of a large number of light emitting diodes. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1A is a top schematic diagram of a transfer plate according to an embodiment of the present invention;
[0017] Figure 1B is a partial top view schematically showing a transfer plate according to an embodiment of the present invention;
[0018] Figure 1C is a partial top view schematically showing a transfer plate according to an embodiment of the present invention;
[0019] Figure 2 is a partial cross-sectional schematic diagram of a transfer plate according to an embodiment of the present invention;
[0020] Figures 3 to 7 It is a partial cross-sectional schematic diagram of a light emitting diode transfer method or a corresponding intermediate according to an embodiment of the present invention.
[0021] Description of Reference Numerals
[0022] 100: transfer plate;
[0023] 300, 400A, 400B, 500A, 500B, 600A, 600B, 600C: light emitting diode transfer intermediates;
[0024] 110: base material;
[0025] 110c: positioning hole;
[0026] 120: patterned conductive layer;
[0027] 120a: pad area;
[0028] 122: pad;
[0029] 123: Depression or round hole;
[0030] 120b: counterpoint area;
[0031] 120c: positioning area;
[0032] 200: light emitting diode;
[0033] 810, 820, 820b, 820c: carrier;
[0034] 811: Pin;
[0035] 812: Placement unit;
[0036] 730: substrate;
[0037] 700: electronic devices;
[0038] D5, D6: spacing;
[0039] R1, R2: area. DETAILED DESCRIPTION
[0040] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.
[0041] The present invention is more fully described with reference to the accompanying drawings of the present embodiment. However, the present invention may be embodied in various forms and should not be limited to the embodiments described herein. The thickness of layers and regions in the drawings are exaggerated for clarity. The same or similar reference numerals represent the same or similar components, and the following paragraphs will not be repeated one by one. In addition, for the sake of clarity, some layers or components may be omitted in the drawings.
[0042] The above and other technical contents, features and effects of the present invention will be clearly presented in the detailed description of the embodiments with reference to the accompanying drawings. The directional terms mentioned in the following embodiments, such as "up" or "down", etc., are only used to refer to the directions of the attached drawings. Therefore, the directional terms used are used for explanation, not for limitation of the present invention.
[0043] Figure 1A It is a top schematic diagram of a transfer plate according to an embodiment of the present invention. Figure 1B It is a partial top view of a transfer plate according to an embodiment of the present invention. Figure 1C It is a partial top view of a transfer plate according to an embodiment of the present invention. Figure 2 It is a partial cross-sectional schematic diagram of a transfer plate according to an embodiment of the present invention. Figure 1B Can correspond to Figure 1A In region R1, Figure 1C Can correspond to Figure 1B Region R2 in the. Figure 2 Can correspond to Figure 1B The A-A' section line in.
[0044] Please refer to Figure 1A to Figure 2 The transfer plate 100 may include a substrate 110 and a patterned conductive layer 120 located on the substrate 110 .
[0045] The material used for the substrate 110 may be suitable for being dissolved by a suitable solvent.
[0046] In one embodiment, the substrate 110 may be a polymer material. In one embodiment, the polymer material used for the substrate 110 may be suitable for being dissolved by a suitable solvent. In one embodiment, the material of the substrate 110 may be polyimide (PI).
[0047] The patterned conductive layer 120 may be formed by performing photolithography, laser scribing or other suitable methods on a corresponding conductive layer (eg, a copper layer or a copper foil).
[0048] The patterned conductive layer 120 may have a pad region 120 a. The pad region 120 a is suitable for connecting with a corresponding electronic component (eg, a light emitting diode) via an appropriate method (eg, welding).
[0049] In one embodiment, the pad area 120a may have a corresponding depression or circular hole 123. The roughness or unevenness of the pad area 120a in the depression or circular hole 123 may improve the bonding between the pad area 120a and the corresponding electronic component (e.g., the light emitting diode 200). In addition, for simplicity, not all depressions or circular holes 123 are marked one by one in the drawings.
[0050] In one embodiment, taking the patterned conductive layer 120 formed by lithography as an example, the circular hole in the pad area 120a can be formed by the same or similar lithography method (e.g., complete etching); and / or, the circular hole in the pad area 120a can be formed by a similar lithography method (e.g., partial etching).
[0051] In one embodiment, taking the patterned conductive layer 120 formed by laser scribing as an example, the circular hole in the pad area 120a can be formed by the same or similar laser scribing method (e.g., complete scribing); and / or, the recess in the pad area 120a can be formed by a similar laser scribing method (e.g., partial scribing).
[0052] That is to say, Figure 1C The recesses or holes 123 are shown schematically, but the shape, number and / or distribution of the recesses or holes 123 are not limited. In addition, the recesses or holes 123 located in the pad area 120a can exist alone (e.g., only recesses, only holes) or in parallel (e.g., part of the recesses and part of the holes).
[0053] In one embodiment, the patterned conductive layer 120 may further include an alignment region 120 b. The alignment region 120 b may include an appropriate pattern (eg, an alignment mark) to facilitate the position or direction determination of the transfer plate 100 or its derivatives.
[0054] In one embodiment, the substrate 110 may have a positioning hole 110c. In subsequent steps, the positioning hole 110c may be suitable for positioning the transfer plate 100 or its derivative at an appropriate location.
[0055] In one embodiment, the substrate 110 may have a positioning hole 110c, and the patterned conductive layer 120 may further have a positioning area 120c. The positioning area 120c of the patterned conductive layer 120 corresponds to the positioning hole 110c of the substrate 110. In the process of positioning the transfer plate 100 or its derivative at an appropriate location through the positioning hole 110c of the substrate 110, the positioning area 120c of the patterned conductive layer 120 can reduce the damage or destruction of the substrate 110 in the positioning hole 110c.
[0056] In one embodiment, the transfer plate 100 may be referred to as a single-sided board, but the present invention is not limited thereto. In an embodiment not shown, a transfer plate similar to the transfer plate 100 may be a double-sided board.
[0057] In one embodiment, the transfer plate 100 may be suitable for transferring light emitting diodes and may be referred to as a light emitting diode transfer plate.
[0058] Figures 2 to 7 It is a partial cross-sectional schematic diagram of a light emitting diode transfer method according to an embodiment of the present invention. Figures 3 to 6C It can be a partial cross-sectional schematic diagram of the corresponding intermediate body in the light-emitting diode transfer process. It is worth noting that Figures 3 to 6C Different but possibly similar embodiments may be included, and different but possibly similar embodiments are described in detail as follows.
[0059] Please refer to Figures 2 to 3 , the light emitting diode (a type of electronic component) 200 is bonded to the transfer plate 100. For example, appropriate electrodes (such as positive electrodes and / or negative electrodes) in the light emitting diode 200 can be connected to corresponding pads 122 (such as positive pads and / or negative pads) in the pad area 120a by appropriate means (such as welding or a method similar to flip-chip bonding). The number of pads 122 can be adjusted according to design requirements. For example, there can be more than 20×20 groups of pads 122 (one group includes a positive pad and a negative pad); or even 20×20 groups; or even 100×100 groups; or even more. In addition, for the sake of simplicity, not all pads 122 are marked one by one in the accompanying drawings.
[0060] For simplicity, Figure 3 The structure shown may be referred to as a light emitting diode transfer intermediate 300 .
[0061] Please refer to Figures 3 to 4A , the light emitting diode transfer intermediate 300 can be flipped upside down and placed on the carrier 810. Figure 4A For example, in one embodiment, the carrier 810 may be a shipping tray or other suitable fixtures. In one embodiment, the carrier 810 may have a suitable pin 811, and the pin 811 may be inserted into the positioning hole 110c to position the light emitting diode transfer intermediate 300 in a suitable place.
[0062] In one embodiment, the carrier 810 may have a corresponding placement unit 812 . The placement unit 812 may be, for example, a groove corresponding to the light emitting diode 200 .
[0063] In one embodiment, a temporary adhesive layer (not shown) may be provided between the light emitting diode 200 and the carrier 810 , so that the light emitting diode 200 can be fixed on the carrier 810 .
[0064] For simplicity, Figure 4A The structure shown may be referred to as a light emitting diode transfer intermediate 400A.
[0065] Please refer to Figures 3 to 4B , the light emitting diode transfer intermediate can be turned upside down and placed on the carrier 820. Figure 4BFor example, in one embodiment, the carrier 820 may be a plate or sheet. The plate may include but is not limited to a glass plate, a metal plate, a plastic plate, a fiberglass plastic plate or the like. The sheet may include but is not limited to a polymer film (such as blue tape, but not limited to).
[0066] In one embodiment, a temporary adhesive layer (not shown) may be provided between the light emitting diode 200 and the carrier 820 , so that the light emitting diode 200 can be fixed on the carrier 820 .
[0067] For simplicity, Figure 4B The structure shown may be referred to as a light emitting diode transfer intermediate 400B.
[0068] Please refer to FIG. 4A to FIG. 5A , the substrate 110 in the light emitting diode transfer intermediate 400A can be removed by etching. FIG. 4B to FIG. 5B , the substrate 110 in the LED transfer intermediate 400B can be removed by etching. In addition, when the substrate 110 is removed, other patterned conductive layers 120 (such as the alignment area 120b and / or the positioning area 120c) that are not connected to the LED 200 can also be transferred together. After the substrate 110 is removed, the pads 122 connected to the LED 200 can be exposed to the outside.
[0069] The reagent suitable for removing the substrate 110 will not substantially affect the light-emitting diode 200 , the metal (eg, the composition of the patterned conductive layer 120 ), and the carrier 810 and / or the carrier 820 .
[0070] Taking the material of the substrate 110 as polyimide as an example, the polyimide can be softened and then dissolved by a lactam solvent (such as 2-pyrrolidin-2-one, N-methylpyrrolidone or the above-mentioned co-solvent).
[0071] For simplicity, Figure 5A The structure shown may be referred to as a light emitting diode transfer intermediate 500A. Figure 5B The structure shown may be referred to as a light emitting diode transfer intermediate 500B.
[0072] Please refer to FIG. 5A to FIG. 6A , so that the pad 122 on the light-emitting diode 200 is bonded to the substrate 730. For example, the pad 122 on the light-emitting diode 200 can be connected to the corresponding position in the substrate 730 by an appropriate method (such as welding or a method similar to flip-chip bonding).
[0073] In one embodiment, the substrate 730 is, for example, a functional substrate 730 having corresponding electrical functions, such as a common circuit board, a thin film transistor array substrate 730 (TFT-Array substrate) or the like on the market. In addition, for the sake of simplicity, the present invention does not describe or illustrate the structure or function of the substrate 730 in detail.
[0074] For the same or similar FIG. 5B to FIG. 6B , so that the pad 122 on the light emitting diode 200 is bonded to the substrate 730. In one embodiment, as Figure 6C As shown, taking the carrier 820 b (a type of carrier 820 ) as a hard plate as an example, the distance between two adjacent light emitting diodes 200 does not change much before and after being bonded to the substrate 730 .
[0075] For the same or similar FIG. 5B to FIG. 6C , so that the pad 122 on the light emitting diode 200 is bonded to the substrate 730. In one embodiment, as Figure 6C As shown, taking the carrier 820c (a type of carrier 820) as a polymer film (e.g., blue tape) as an example, before the pads 122 on the LED 200 are bonded to the substrate 730, the polymer film can be stretched to increase the distance between two adjacent LEDs 200. In other words, the distance D6 in the LED transfer intermediate 600C is greater than the distance D5 in the LED transfer intermediate 500B.
[0076] For simplicity, Fig. 6A The structure shown may be referred to as a light emitting diode transfer intermediate 600A. Figure 6B The structure shown may be referred to as a light emitting diode transfer intermediate 600B. Figure 6C The structure shown can be referred to as an LED transfer intermediate 600C. It is worth noting that the orientation of the LED transfer intermediate 600A, the LED transfer intermediate 600B or the LED transfer intermediate 600C is not limited to the drawings, but can be turned upside down according to manufacturing requirements.
[0077] Please refer to FIG. 6A to FIG. 7 , FIG. 6B to FIG. 7 or FIG. 6C to FIG. 7 , the light emitting diode 200 can be separated from the carrier 810 / carrier 820 to form a Figure 7 The electronic device 700 is shown. The electronic device 700 is, for example, a light emitting diode display.
[0078] The corresponding light emitting diode transfer intermediate can be formed by the above-mentioned method. However, it should be noted that the present invention only illustrates the formation method of the light emitting diode transfer intermediate at each stage and the corresponding application by way of example but not limitation.
[0079] In summary, a large number of light emitting diodes can be transferred at one time through the transfer plate, the light emitting diode transfer intermediate and the light emitting diode transfer method of the present invention. Moreover, the transfer method is relatively simple.
[0080] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A transfer plate, characterized in that: include: Base material; as well as The patterned conductive layer is located on the substrate, wherein the substrate is made of polyimide.
2. A transfer plate, characterized in that: include: Base material; as well as A patterned conductive layer is disposed on the substrate, wherein: The substrate includes a positioning hole; The patterned conductive layer includes a pad area and a positioning area; and The positioning hole corresponds to the positioning area.
3. A light emitting diode transfer method, characterized in that: include: Providing a transfer plate, which includes a substrate and a patterned conductive layer located on the substrate; Disposing a light emitting diode on the transfer plate so that the light emitting diode is connected to a pad in the patterned conductive layer; placing the transfer plate having the light emitting diodes arranged thereon on a carrier; removing the substrate on the carrier to expose the pads connected to the light emitting diodes; and The pad on the light emitting diode is joined to a substrate.
4. The light emitting diode transfer method according to claim 3, characterized in that: The material of the substrate is polyimide, and the step of removing the substrate is performed by removing the substrate through a solvent.
5. The light emitting diode transfer method according to claim 3, characterized in that: The substrate includes positioning holes.
6. The light emitting diode transfer method according to claim 5, characterized in that: The carrier has a pin, and when the transfer plate with the light emitting diodes arranged thereon is placed on the carrier, the pin is inserted into the positioning hole.
7. The light emitting diode transfer method according to claim 6, characterized in that: The patterned conductive layer further includes a positioning area, and the positioning hole corresponds to the positioning area.
8. The light emitting diode transfer method according to claim 3, characterized in that: The carrier has a recessed placement unit, and the light emitting diode corresponds to the placement unit when the transfer plate is placed on the carrier.
9. The light emitting diode transfer method according to claim 3, characterized in that: in: Before the substrate is removed, there is a first distance between two adjacent light emitting diodes; After the pad is bonded to the substrate, a second distance exists between two adjacent light emitting diodes; and The second distance is greater than the first distance.
10. A light emitting diode transfer intermediate, characterized in that: include: The transfer plate as claimed in claim 1 or 2; as well as The light emitting diode is arranged on the patterned conductive layer.