Base of semiconductor equipment

Abstract

The present invention provides a base of a semiconductor device, comprising: a circular main body provided with an upper surface and a lower surface, the circular main body comprising: a central region disposed in the center of the circular main body; the edge area is arranged on the circumferential edge of the circular main body; the bearing area is arranged between the central area and the edge area; wherein the roughness of the lower surface of the circular main body bearing area is lower than that of the lower surface of the central area. The low-roughness area is arranged on the lower surface of the bearing area, so that the heat distribution of the base is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to the technical field of a base of semiconductor equipment. Background Art

[0002] In the process of semiconductor chip processing, semiconductor processing equipment is required, such as etching equipment, photolithography equipment, and thin film equipment.

[0003] Taking epitaxial equipment as an example, the wafer needs to be supported by a susceptor, but only the edge area of ​​the wafer contacts the susceptor, which leads to uneven heat distribution of the wafer. In addition, since the thermal stress of the susceptor and the distribution of the process gas flow need to be configured, a pattern is set on the surface of the susceptor to solve this problem, but the pattern will further increase the uneven heat distribution. Summary of the invention

[0004] The object of the present invention is to provide a base to solve the above-mentioned problem of uneven temperature distribution.

[0005] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0006] The present invention provides a base for a semiconductor device, comprising:

[0007] A circular body, wherein the circular body is provided with an upper surface and a lower surface, and the circular body comprises:

[0008] A central area, the central area is arranged at the center of the circular body;

[0009] an edge region, the edge region being arranged at a circumferential edge of the circular body;

[0010] A bearing area, wherein the bearing area is arranged between the central area and the edge area;

[0011] Wherein, the roughness of the lower surface of the circular body bearing area is lower than the roughness of the lower surface of the central area.

[0012] Optionally, the roughness of the lower surface of the edge area of ​​the circular body is higher than the roughness of the lower surface of the central area.

[0013] Optionally, a slope is provided on the upper surface of the bearing area of ​​the circular body, and the slope is inclined downward from the edge area to the central area.

[0014] Optionally, the lower surface of the bearing area includes a plurality of annular sub-areas, and each of the annular sub-areas has a different roughness.

[0015] Optionally, the roughness of the annular sub-area increases gradually from the edge area to the central area.

[0016] Optionally, there are two annular sub-areas.

[0017] Optionally, the circular body is provided with an upper layer, a middle layer and a lower layer stacked from top to bottom, the upper layer is a graphite layer, and the middle layer and the lower layer are both silicon carbide layers.

[0018] Optionally, a plurality of radially extending protrusions are provided on the lower surface of the upper layer, and the interval between two adjacent protrusions in the circumferential direction is the same.

[0019] Optionally, the intermediate layer is grown on the lower surface of the upper layer by deposition.

[0020] Optionally, the height of the protrusion on the lower surface of the upper layer is 100-200um.

[0021] Optionally, the bearing area of ​​the lower layer is formed by shielding the central area and the edge area with photoresist, and depositing a silicon carbide single crystal layer in the bearing area.

[0022] The present invention also provides a semiconductor device, comprising:

[0023] Cavity;

[0024] an upper heating lamp, wherein the upper heating lamp is arranged above the cavity;

[0025] A lower heating lamp, wherein the lower heating lamp is arranged below the cavity;

[0026] The above-mentioned base is arranged in the cavity.

[0027] Compared with the prior art, the present invention has the following advantages:

[0028] 1. The base of the present invention is provided with a low roughness area on the lower surface of the bearing area, which improves the heat distribution of the base and avoids excessive temperature at the edge of the wafer.

[0029] 2. The base of the present invention is provided with multiple layers, and protrusions are provided on the lower surface of the upper layer, which can ensure that the base does not deform or warp. At the same time, by providing an intermediate layer and a lower layer, the protrusions are covered to ensure the flatness of the lower surface of the base and avoid uneven heat distribution caused by the pattern structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0031] Figure 1It is a structural schematic diagram of the epitaxial device of the present invention;

[0032] Figure 2 It is a structural schematic diagram of the base of the present invention;

[0033] Figure 3 It is another structural schematic diagram of the base of the present invention;

[0034] Figure 4 It is another structural schematic diagram of the base of the present invention;

[0035] Figure 5 It is a bottom view of the upper layer of the present invention. DETAILED DESCRIPTION

[0036] The scheme proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the accompanying drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0037] Figure 1 The schematic diagram of the structure of the semiconductor device of the present invention is shown, taking the epitaxial device as an example. Figure 1As shown, the epitaxial device includes: a chamber 100, an upper heating lamp, a lower heating lamp and a base 200. The base 200 is arranged in the chamber 100 for carrying the wafer W. The upper heating lamp is arranged above the chamber, and the lower heating lamp is arranged below the chamber to provide thermal radiation to the wafer W. The chamber 100 includes an upper dome 131, a lower dome 132, a side wall, a liner 181, a preheating ring 182, an upper fixing member 161 and a lower fixing member 162. The side wall, the upper fixing member and the lower fixing member are all roughly annular, the upper dome is a convex circular shape, and the lower dome is funnel-shaped. The upper dome 131 and the lower dome 132 are both made of transparent quartz. The upper dome 131 is fixed to the top of the side wall by the upper fixing member 161, and the lower dome 132 is fixed to the bottom of the side wall by the lower fixing member 162. The liner 181 is arranged on the inner surface of the side wall; the base 200 is supported by a rotating support and is arranged horizontally in the cavity, and the rotating support is used to drive the base to rotate and rise and fall; the preheating ring 182 is arranged on the inner surface of the liner 181 and is arranged around the base 200. An air inlet is arranged on one side of the cavity 100, and an exhaust port opposite to the air inlet is arranged on the other side. The air inlet is provided with an air inlet 171 for introducing process gas into the cavity, and the exhaust port is provided with an exhaust member 172 for connecting with a pump to discharge the process gas after the process out of the cavity.

[0038] The upper heating lamp includes an upper inner ring heating lamp group and an upper outer ring heating lamp group, both of which are annular, and the two rings are concentrically arranged, and the center of the circle is concentric with the center of the base. The upper inner ring heating lamp group is used to heat the inner ring of the wafer, and the upper outer ring heating lamp group is used to heat the outer ring of the wafer. The lower heating lamp includes a lower inner ring heating lamp group and a lower outer ring heating lamp group, both of which are annular, and the two rings are concentrically arranged, and the center of the circle is concentric with the center of the base. The lower inner ring heating lamp group is used to heat the inner ring of the wafer, and the upper outer ring heating lamp group is used to heat the outer ring of the wafer. Pyrometers 150 are also arranged above and below the cavity 100 to detect the process temperature and control the power of the upper and lower heating lamps.

[0039] Figure 2 It is a schematic diagram of the structure of the base of the present invention, as shown in Figure 2 As shown, the base 200 includes a circular body, the circular body is provided with an upper surface and a lower surface, and the circular body includes: a central area 210, an edge area 230 and a bearing area 220,

[0040] The central area 210 is arranged at the center of the circular body; the edge area 230 is arranged at the circumferential edge of the circular body; the bearing area 220 is arranged between the central area and the edge area; wherein the central area is circular, the edge area and the bearing area are annular, and the centers of the central area, the edge area and the bearing area are concentric. The bearing area is an area supporting the circumferential edge of the wafer W, and a circular groove is arranged on the upper surface of the circular body, and the circular groove is used to place the wafer W. The edge of the circular groove is arranged with a slope, that is, a slope is arranged on the upper surface of the bearing area of ​​the circular body, and the slope is inclined downward from the edge area to the central area, and the circumferential edge of the wafer is arranged on the slope.

[0041] The roughness of the lower surface of the circular body bearing area 220 is lower than that of the lower surface of the central area 210. Lower roughness leads to lower temperature, thus reducing the temperature of the edge of the wafer, thereby ensuring the thermal uniformity of the entire wafer.

[0042] Preferably, the roughness of the lower surface of the circular body edge region 230 is higher than the roughness of the lower surface of the central region 210. Since the edge region 230 receives less heat radiation from the heating lamp, the high roughness is conducive to ensuring the temperature of the edge region of the susceptor, and further ensuring the temperature of the process gas just entering the chamber.

[0043] Figure 3 Another structural schematic diagram of the base of the present invention is shown, as shown in FIG. Figure 3 As shown, the lower surface of the bearing area includes a plurality of annular sub-areas. Figure 3 Three annular sub-areas are shown exemplarily, namely annular sub-area 221, annular sub-area 222 and annular sub-area 223, and the roughness of the lower surface of each annular sub-area is different. Optionally, the roughness of the annular sub-area increases from the edge area to the central area. Since the edge of the wafer is generally arranged in the annular sub-area close to the edge area 230, its roughness is the lowest, which is conducive to ensuring that the temperature of the wafer edge is not accidentally increased. At the same time, due to the presence of the slope, the change in roughness can ensure uniform temperature distribution. Preferably, there are two annular sub-areas.

[0044] Figure 4-5 Another structural schematic diagram of the base is shown, such as Figure 4-5 As shown above Figure 2-3The circular body may be provided with an upper layer 231, an intermediate layer 232 and a lower layer 233 stacked from top to bottom, wherein the upper layer 231 is a graphite layer, and the intermediate layer 232 and the lower layer 233 are both silicon carbide layers. A plurality of radially extending protrusions 2310 are provided on the lower surface of the upper layer 231, and the intervals between two adjacent protrusions 2310 in the circumferential direction are the same, that is, the protrusions 2310 are evenly arranged in the circumferential direction. The protrusions are only provided on the lower surface of the central area 210, and the width of the protrusions increases from the edge area to the central area. The provision of the protrusions is conducive to preventing the base from deformation and warping under high temperature conditions. Optionally, the height of the protrusions on the lower surface of the upper layer is 100-200um.

[0045] The intermediate layer is grown on the lower surface of the upper layer by deposition, and the protrusion is covered in the intermediate layer. This arrangement ensures the flatness of the entire lower surface of the base and does not affect the heat distribution.

[0046] The lower layer is grown on the lower surface of the middle layer by deposition. The bearing area of ​​the lower layer is formed by: photoresist shielding the central area and the edge area, and depositing a silicon carbide single crystal layer in the bearing area. The single crystal layer is conducive to reducing the roughness and forming the above-mentioned low roughness.

[0047] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements. In addition, the term "connection" herein means that A and B are directly connected, or that A and B are indirectly connected, such as A and B are connected through C, or even through more components such as C and D, and A and B can be connected in one piece, or in separate pieces, or removable, or fixed. The term "optional" herein means that the technical feature can be combined or not combined with any feature in the text.

[0048] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A base for a semiconductor device, characterized in that: include: A circular body, wherein the circular body is provided with an upper surface and a lower surface, and the circular body comprises: A central area, the central area is arranged at the center of the circular body; an edge region, the edge region being arranged at a circumferential edge of the circular body; A bearing area, wherein the bearing area is arranged between the central area and the edge area; Wherein, the roughness of the lower surface of the circular body bearing area is lower than the roughness of the lower surface of the central area.

2. A base for a semiconductor device as claimed in claim 1, characterized in that: The roughness of the lower surface of the edge area of ​​the circular body is higher than the roughness of the lower surface of the central area.

3. A base for semiconductor equipment according to claim 1, characterized in that: A slope is arranged on the upper surface of the bearing area of ​​the circular body, and the slope is inclined downward from the edge area to the central area.

4. A base for semiconductor equipment as claimed in claim 3, characterized in that: The lower surface of the bearing area includes a plurality of annular sub-areas, and each of the annular sub-areas has a different roughness.

5. A base for semiconductor equipment as claimed in claim 4, characterized in that: The roughness of the annular sub-area increases gradually from the edge area to the central area.

6. A base for semiconductor equipment as claimed in claim 4, characterized in that: There are two annular sub-areas.

7. A base for semiconductor equipment according to any one of claims 1 to 6, characterized in that: The circular body is provided with an upper layer, a middle layer and a lower layer stacked from top to bottom, the upper layer is a graphite layer, and the middle layer and the lower layer are both silicon carbide layers.

8. A base for semiconductor equipment as claimed in claim 7, characterized in that: A plurality of radially extending protrusions are arranged on the lower surface of the upper layer, and the intervals between two adjacent protrusions in the circumferential direction are the same.

9. A base for semiconductor equipment as claimed in claim 8, characterized in that: The intermediate layer is grown on the lower surface of the upper layer by deposition.

10. A base for semiconductor equipment according to claim 8, characterized in that: The height of the protrusions on the lower surface of the upper layer is 100-200 um.

11. A base for semiconductor equipment according to claim 9, characterized in that: The lower layer bearing area is formed by shielding the central area and the edge area with photoresist, and depositing a silicon carbide single crystal layer in the bearing area.

12. A semiconductor device, characterized in that: include: Cavity; an upper heating lamp, wherein the upper heating lamp is arranged above the cavity; A lower heating lamp, wherein the lower heating lamp is arranged below the cavity; The base as described in any one of claims 1-11 is arranged in the cavity.

Images