Wafer bonding equipment

Abstract

The present application provides a wafer bonding device. The wafer bonding device includes a bonding chamber and a first carrier, a second carrier and a driving assembly located in the bonding chamber. The first carrier is arranged opposite to the second carrier. The first carrier includes a bearing portion and a limiting portion arranged around the bearing portion. The bearing portion is used to bear a wafer, and the limiting portion is used to limit the position of the wafer carried by the bearing portion. The driving assembly includes a first driving portion, and the first driving portion is used to drive the first carrier and / or the second carrier to move so that two wafers located between the bearing portion and the first carrier are bonded. The limiting portion can limit the position of the wafer to avoid the position of the wafer from being offset, which is beneficial to improving the bonding accuracy of the wafer and improving the bonding quality.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a wafer bonding device. Background Art

[0002] Wafer bonding device is a special equipment used to tightly bond wafers and is widely used in semiconductor manufacturing, microelectronics, micro-electromechanical systems and other fields.

[0003] In the process of placing wafers in the existing wafer bonding device, the wafers are easily offset, resulting in reduced alignment accuracy of the two wafers, thereby affecting the quality of wafer bonding. Summary of the invention

[0004] The present application provides a wafer bonding device, which includes a bonding chamber and a first carrier, a second carrier and a driving assembly located in the bonding chamber;

[0005] The first carrier is arranged opposite to the second carrier; the first carrier comprises a bearing portion and a limiting portion arranged around the bearing portion; the bearing portion is used to bear the wafer; the limiting portion is used to limit the wafer carried by the bearing portion;

[0006] The driving assembly includes a first driving unit, and the first driving unit is used to drive the first stage and / or the second stage to move so that two wafers located between the bearing unit and the first stage are bonded.

[0007] In one embodiment, the wafer separation device also includes a wafer separation component, and the driving assembly also includes a second driving unit; the second driving unit is configured to: after placing the first wafer on the supporting unit, drive the wafer separation component to extend to the side of the supporting unit away from the supporting unit where the wafer supported by the supporting unit is away from the supporting unit; after the second wafer is placed on the side of the wafer separation component away from the supporting unit, drive the wafer separation assembly to move to the side of the supporting unit so that the two wafers are in contact.

[0008] In one embodiment, the limiting portion is provided with a receiving groove, and the receiving groove is used to receive the wafer separation component when the wafer separation member moves to the side of the supporting portion.

[0009] In one embodiment, the second carrier includes a bonding portion, and the orthographic projection of the bonding portion on the plane where the surface of the bearing portion facing the second carrier is located falls within the orthographic projection of the limiting portion on the plane; the first driving portion can drive the first carrier and / or the second carrier to move so that the bonding portion enters the limiting portion.

[0010] In one embodiment, the first carrier includes a carrier body, and the limiting portion is fixedly disposed on the carrier body; the limiting portion is in a circular ring shape and is an integrated structure.

[0011] In one embodiment, the limiting portion includes a plurality of sub-limiting portions arranged at intervals along the circumferential direction, and each of the sub-limiting portions can move in the horizontal direction;

[0012] The limiting portion has a first state and a second state; in the first state, the distance between each of the sub-limiting portions and the bearing portion is smaller than the distance between each of the sub-limiting portions and the bearing portion in the second state;

[0013] The driving assembly further includes a third driving part; the third driving part is used to drive each of the sub-limiting parts to move, so that the limit part switches between the first state and the second state.

[0014] In one embodiment, when the limiting portion is in the first state, a side surface of each sub-limiting portion is in contact with a side surface of the sub-limiting portion adjacent thereto.

[0015] In one embodiment, when the limiting portion is in the first state, there is a gap between at least two adjacent sub-limiting portions.

[0016] In one embodiment, at least one of the first stage and the second stage is provided with a heating element;

[0017] The second carrier includes a bonding portion, the orthographic projection of the bonding portion on the plane where the surface of the bearing portion facing the first carrier is located falls within the orthographic projection of the limiting portion on the plane, and when the bonding portion enters the limiting portion, the side surface of the bonding portion is fitted with the limiting portion, so that the bearing portion, the limiting portion and the bonding portion are enclosed to form an annealing space.

[0018] In one embodiment, the limiting portion, the bearing portion and the bonding portion are respectively provided with heating elements.

[0019] The wafer bonding device provided in the embodiment of the present application sets the wafer on the carrying part of the first carrier, and then, driven by the first driving part, the first carrier and the second carrier are brought closer to each other, so that the two wafers located between the carrying part and the second carrier are bonded; in the process of moving the wafer into the wafer bonding device, the limiting part surrounding the carrying part can contact the edge of the wafer, thereby limiting the wafer located on the carrying part to prevent the position of the wafer from being greatly offset. Such a setting is conducive to improving the alignment accuracy of the two wafers, thereby improving the bonding quality.

[0020] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0022] Figure 1 A schematic structural diagram of a wafer bonding device provided in one embodiment of the present application;

[0023] Figure 2 for Figure 1 A top view of a first stage of a wafer bonding apparatus provided in the illustrated embodiment;

[0024] Figure 3 A schematic structural diagram of a wafer bonding device provided in another embodiment of the present application;

[0025] Figure 4 for Figure 3 The illustrated embodiment provides a top view of a first stage of a wafer bonding apparatus. DETAILED DESCRIPTION

[0026] Here, the technical solutions in the embodiments (or "implementations") of the present application will be described clearly and completely in conjunction with the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0027] If there are terms involving directional indications or positional relationships in the embodiments of the present application (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings); if the specific posture changes, the directional indication or positional relationship will also change accordingly. In addition, the terms "first", "second", etc. involved in the embodiments of the present application are only used for the purpose of convenience of description and cannot be understood as indicating or implying relative importance.

[0028] The wafer bonding device of the embodiment of the present application is described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the features of the following embodiments and implementations can complement or combine with each other.

[0029] The present application embodiment provides a wafer bonding device 100, such as Figure 1 and Figure 3 As shown, the wafer bonding apparatus 100 includes a bonding chamber 40 and a first stage 10 , a second stage 20 and a driving assembly 30 located in the bonding chamber.

[0030] The first carrier 10 is arranged opposite to the second carrier 20. The first carrier 10 includes a carrying portion 11 and a limiting portion 12 arranged around the carrying portion 11. The carrying portion 11 is used to carry the wafer 200, and the limiting portion 12 is used to limit the wafer 200 carried by the carrying portion 11.

[0031] The driving assembly 30 includes a first driving unit 31, which is used to drive the first stage 10 or the second stage 20 to move, or to drive the first stage 10 and the second stage 20 to move at the same time, so that two wafers 200 located between the supporting unit 11 and the first stage 10 are bonded.

[0032] In the wafer bonding device provided in the embodiment of the present application, after the wafer 200 is placed on the bearing portion 11 of the first carrier 10, the first carrier 10 and the second carrier 20 are driven by the first driving portion 31 to move closer, so that the two wafers 200 located between the bearing portion 11 and the second carrier 20 are bonded. In the process of moving the wafer 200 into the wafer bonding device, the limiting portion 12 surrounding the bearing portion 11 can contact the edge of the wafer 200, thereby limiting the position of the wafer 200 located on the bearing portion 11 to prevent the position of the wafer 200 from being greatly offset. Such a setting is conducive to improving the alignment accuracy of the two wafers, thereby improving the bonding quality.

[0033] In one embodiment, the wafer bonding device also includes an air pump, which is connected to the bonding chamber 40. The air pump can be used to extract the air in the bonding chamber 40 and fill the bonding chamber 40 with inert gas to form a clean and stable bonding environment in the bonding chamber 40.

[0034] In one embodiment, Figure 1 and Figure 3 As shown, the wafer separation device 100 further includes a wafer separation member 50, and the driving assembly 30 further includes a second driving unit. The second driving unit is configured to: after placing the first wafer 201 on the carrying portion 11, drive the wafer separation member 50 to extend to the side of the first wafer 201 carried by the carrying portion 11 away from the carrying portion 11, and after placing the second wafer 202 on the side of the wafer separation member 50 away from the carrying portion 11, drive the wafer separation member 50 to move to the side of the carrying portion 11 to make the two wafers contact. Before wafer bonding, the wafer separation piece 50 extends between the first wafer 201 and the second wafer 202 to prevent the surfaces of the two wafers from sticking together. When the bonding chamber 40 is evacuated, the wafer separation piece 50 can separate the first wafer 201 and the second wafer 202 by a certain distance, so that the air pump can completely extract the air between the two wafers, thereby preventing bubbles from existing between the first wafer 201 and the second wafer 202 and affecting the bonding quality of the wafers.

[0035] Due to the friction between the wafer separation piece 50 and the second wafer 202, when the wafer separation piece 50 is pulled out from between the first wafer 201 and the second wafer 202, the second wafer 202 may be displaced. At this time, the limiting portion 12 abuts against the edge of the second wafer 202, which can avoid the position of the second wafer 202 from being shifted, which is beneficial to improving the bonding accuracy of the wafers.

[0036] In one embodiment, Figure 2 and Figure 4 As shown, the limiting portion 12 is provided with a receiving groove 121, and the receiving groove 121 is used to receive the wafer separation component 50 when the wafer separation component 50 moves to the side of the carrying portion 11. When the wafer separation component 50 is moved out from between the first wafer 201 and the second wafer 202, the receiving groove 121 can provide a suitable storage space for the wafer separation component 50 to avoid interference between the wafer separation component 50 and the limiting portion 12. In addition, the receiving groove 121 is provided on the limiting portion 12, so that the space in the bonding chamber can be better utilized, making the layout of each component more compact and reasonable.

[0037] In one embodiment, the accommodating groove 121 is a groove provided on the side of the limiting portion 12 facing the bearing portion 11 , or the accommodating groove 121 is a through groove penetrating the limiting portion 12 .

[0038] In one embodiment, Figure 1 and Figure 3 As shown, the second stage 20 includes a bonding portion 21, the orthographic projection of the bonding portion 21 on the plane where the surface of the carrying portion 11 facing the second stage 20 is located falls within the orthographic projection of the limiting portion 12 on the plane, and the first driving portion 31 can drive the first stage 10 or the second stage 20 to move, or drive a stage 10 and the second stage 20 to move together, so that the bonding portion 21 enters the limiting portion 12. With such a design, when the bonding portion 21 abuts against the surface of the second wafer 202 and the wafer is bonded, physical interference between the bonding portion 21 and the limiting portion 12 can be avoided, thereby avoiding the risk of equipment damage or bonding failure.

[0039] In one embodiment, Figure 1 and Figure 2 As shown, the first carrier 10 includes a carrier body 101 , and the limiting portion 12 is fixedly disposed on the carrier body 101 .

[0040] Furthermore, the limiting portion 12 is in the shape of a circular ring and is an integrated structure. The integrated circular ring-shaped limiting portion 12 has strong structural stability, which can avoid the problem of the limiting portion 12 failing due to structural looseness or breakage. The integrated structural design can also simplify the manufacturing process and reduce the assembly complexity of the wafer bonding device, which is conducive to reducing production costs and improving production efficiency. In some other embodiments, the limiting portion 12 may also include a plurality of limiting structures arranged at intervals along the circumferential direction, and the plurality of limiting structures are fixedly arranged on the carrier body 101 to limit the wafer 200.

[0041] In one embodiment, Figure 3 and Figure 4 As shown, the limiting portion 12 includes a plurality of sub-limiting portions 122 arranged at intervals along the circumferential direction, and each of the sub-limiting portions 122 can move in the horizontal direction. The limiting portion 12 has a first state and a second state: in the first state, the distance between each of the sub-limiting portions 122 and the bearing portion 11 is less than the distance between each of the sub-limiting portions 122 and the bearing portion 11 in the second state. The driving assembly 30 also includes a third driving portion, and the third driving portion is used to drive each of the sub-limiting portions 122 to move, so that the limiting portion 12 switches between the first state and the second state. In some embodiments, in the first state, each of the sub-limiting parts 122 can abut against the wafer; before the wafer 200 is placed on the carrying part 11, the third driving part drives each of the sub-limiting parts 122 away from the carrying part 11 until the limiting part 12 is in the second state, at which time there is a large space between each of the sub-limiting parts 122 and the carrying part 11, which is convenient for moving the wafer 200 above the carrying part 11, and avoiding the wafer 200 from colliding with the limiting part 12 during the placement process. After the wafer 200 is placed on the carrying part 11, the third driving part drives each of the sub-limiting parts 122 to move toward the direction close to the carrying part 11 until the limiting part 12 is in the first state, at which time each of the sub-limiting parts 122 abuts against the edge of the wafer 200 toward the side of the carrying part 11, avoiding displacement of the wafer 200 during bonding or other processes.

[0042] In this embodiment, in the second state, there is a gap between each of the sub-limiting portions 122 and the carrying portion 11; and the area enclosed by all the sub-limiting portions 122 is larger than the area covered when the wafer 200 is placed on the carrying portion 11, as long as each sub-limiting portion 122 does not exceed the edge of the carrier body 101.

[0043] In the first state, each sub-limiting portion 122 abuts against the edge of the wafer 200. In the first state, the position of each sub-limiting portion 122 can be adjusted, so that the limiter 12 can adapt to wafers of different sizes, thereby improving the versatility of the wafer bonding device. In some embodiments, a pressure sensor can be provided on the side of each sub-limiting portion 122 facing the bearing portion 11, and the pressure sensor is used to detect whether the limiter 12 is in the first state.

[0044] In one embodiment, the third driving unit can drive each of the sub-limiting parts 122 to move in a plane parallel to the surface of the carrying part 11 facing the second carrier 20. There can be multiple third driving units, each of which drives one sub-limiting part 122 to move. Figure 4 In the illustrated embodiment, the limiting portion 12 includes two sub-limiting portions 122. In other embodiments, the number of the sub-limiting portions 122 may be three, four or more. The number of the sub-limiting portions 122 may be specifically set according to actual needs.

[0045] In one embodiment, when the limiting part 12 is in the first state, the side surface of each sub-limiting part fits with the side surface of the sub-limiting part adjacent to it. In this way, in the first state, each sub-limiting part 122 can enclose and form a complete limiting circle to ensure the position accuracy of the wafer during the process. In addition, when each sub-limiting part 122 is closely arranged together, a more stable limiting effect can be provided for the wafer 200, avoiding the adverse effect of the wafer on the wafer caused by the small displacement or vibration of the sub-limiting part.

[0046] exist Figure 4 In the illustrated embodiment, the limiting portion 12 includes two semicircular sub-limiting portions 122 . When the limiting portion 12 is in the first state, the ends of the two sub-limiting portions 122 fit together to form a limiting circular ring surrounding the wafer 200 .

[0047] In one embodiment, when the limiting portion 12 is in the first state, there is a gap between at least two adjacent sub-limiting portions 122. The gap between the sub-limiting portions 122 can be adjusted according to the actual size of the wafer 200, so that the limiting portion 12 can be suitable for wafers of different diameters. In addition, the existence of the gap can reduce the contact area between each sub-limiting portion 122 and the edge of the wafer 200, thereby reducing the risk of the wafer edge being scratched by the limiting portion. In this embodiment, the sub-limiting portion 122 can be block-shaped or rod-shaped, and only form point contact with the edge of the wafer 200. The sub-limiting portion 122 can also prevent the position of the wafer from shifting by limiting multiple points on the circumference of the wafer 200.

[0048] In one embodiment, Figure 1 and Figure 3As shown, at least one of the first carrier 10 and the second carrier 20 is provided with a heating element. When the bonding portion 21 enters the limiting portion 12, the side surface of the bonding portion 21 is fitted with the limiting portion 12, so that the bearing portion 11, the limiting portion 12 and the bonding portion 21 are enclosed to form an annealing space. After the bonding portion 21 cooperates with the bearing portion 11 to bond the wafer 200, the wafer 200 is enclosed in the annealing space. In the annealing space, the wafer can receive heat from the heating element, thereby performing an annealing process, so that the bonded wafer reaches the desired physical and chemical state, which is conducive to eliminating the stress of the bonding surface. The wafer bonding device can perform an annealing process on the wafer 200 in the bonding chamber 40 through the cooperation of various components, which simplifies the process flow, reduces the number of wafer transfers, and improves production efficiency.

[0049] It should be noted that, in this embodiment, in order to form a closed annealing space, when the limiting portion 12 is fixedly arranged on the carrier body 101, the limiting portion 12 is an integrated structure in a circular ring shape; when the limiting portion 12 includes a plurality of sub-limiting portions 122, when the plurality of sub-limiting portions 122 are in the first state, the side surface of each sub-limiting portion is in contact with the side surface of the sub-limiting portion adjacent to it.

[0050] In this embodiment, the bonding portion 21 can enter the limiting portion 12 to bond the wafer 200, so the height of the limiting portion 12 is at least higher than the surface of the second wafer 202 away from the first carrier 10. In some other embodiments, after the second wafer 202 is placed on the wafer separation member 50, the height of the limiting portion 12 is at least higher than the bottom surface of the second wafer 202 facing the first carrier 10, so that the limiting portion 12 can limit the position of the second wafer 202.

[0051] In one embodiment, the limiting portion 12, the bearing portion 11 and the bonding portion 21 are respectively provided with a heating element. In this way, the heating element can provide uniform heat to the wafer 200, ensuring uniform temperature distribution in the annealing space, so that each part of the wafer 200 can reach the same annealing condition.

[0052] It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without causing conflicts. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the drawings; all modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application should be included in the scope of protection of this application.

Claims

1. A wafer bonding device, characterized in that: The wafer bonding device comprises a bonding chamber and a first carrier, a second carrier and a driving assembly located in the bonding chamber; The first carrier is arranged opposite to the second carrier; the first carrier comprises a bearing portion and a limiting portion arranged around the bearing portion; the bearing portion is used to bear the wafer; the limiting portion is used to limit the wafer carried by the bearing portion; The driving assembly includes a first driving unit, and the first driving unit is used to drive the first stage and / or the second stage to move so that two wafers located between the bearing unit and the first stage are bonded.

2. The wafer bonding device according to claim 1, characterized in that: The wafer separation device also includes a wafer separation component, and the driving assembly also includes a second driving unit; the second driving unit is configured to: after the first wafer is placed on the supporting unit, drive the wafer separation component to extend to the side of the supporting unit away from the first wafer supported by the supporting unit; after the second wafer is placed on the side of the wafer separation component away from the supporting unit, drive the wafer separation component to move to the side of the supporting unit to make the two wafers contact.

3. The wafer bonding device according to claim 2, characterized in that: The limiting portion is provided with a receiving groove, and the receiving groove is used to receive the wafer separation component when the wafer separation member moves to the side of the bearing portion.

4. The wafer bonding device according to claim 1, characterized in that: The second carrier includes a bonding portion, and the orthographic projection of the bonding portion on the plane where the surface of the bearing portion facing the second carrier is located falls within the orthographic projection of the limiting portion on the plane; the first driving portion can drive the first carrier and / or the second carrier to move so that the bonding portion enters the limiting portion.

5. The wafer bonding device according to claim 1, characterized in that: The first carrier includes a carrier body, and the limiting portion is fixedly arranged on the carrier body; the limiting portion is in a circular ring shape and is an integrated structure.

6. The wafer bonding device according to claim 1, characterized in that: The limiting portion includes a plurality of sub-limiting portions arranged at intervals along the circumferential direction, and each of the sub-limiting portions can move in the horizontal direction; The limiting portion has a first state and a second state; in the first state, the distance between each of the sub-limiting portions and the bearing portion is smaller than the distance between each of the sub-limiting portions and the bearing portion in the second state; The driving assembly further includes a third driving part; the third driving part is used to drive each of the sub-limiting parts to move, so that the limit part switches between the first state and the second state.

7. The wafer bonding device according to claim 6, characterized in that: When the limiting portion is in the first state, the side surface of each sub-limiting portion is in contact with the side surface of the sub-limiting portion adjacent to it.

8. The wafer bonding device according to claim 6, characterized in that: When the limiting portion is in the first state, there is a gap between at least two adjacent sub-limiting portions.

9. The wafer bonding device according to claim 5 or 7, characterized in that: At least one of the first carrier and the second carrier is provided with a heating element; The second carrier includes a bonding portion, the orthographic projection of the bonding portion on the plane where the surface of the bearing portion facing the first carrier is located falls within the orthographic projection of the limiting portion on the plane, and when the bonding portion enters the limiting portion, the side surface of the bonding portion is fitted with the limiting portion, so that the bearing portion, the limiting portion and the bonding portion are enclosed to form an annealing space.

10. The wafer bonding device according to claim 9, characterized in that: The limiting portion, the bearing portion and the bonding portion are respectively provided with heating elements.

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