Super-symmetric matching topology protection semiconductor laser array

Abstract

The invention provides a super-symmetric matching topology protection semiconductor laser array, and relates to the technical field of semiconductor lasers. The super-symmetric matching topology protection semiconductor laser array comprises a topology main array used for generating an output light beam through pumping; the super-symmetric partner array is arranged to be in coupling connection with the topology main array; wherein the coupling distance between the topological main array and the super-symmetric partner array is regulated and controlled, so that the high-order mode in the light beam is coupled into the super-symmetric partner array from the topological main array through an evanescent wave coupling mechanism, and the lasing threshold value of the high-order mode is regulated and controlled.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor lasers, and more particularly, to a supersymmetric matched topologically protected semiconductor laser array. Background Art

[0002] Compared with a single laser unit, semiconductor laser arrays have significant advantages in high power output, thermal management capabilities, and integrated design. However, with the increase in output power, the coupling effect between units becomes more significant, leading to the emergence of multiple supermodes, which in turn reduces the beam quality. At the same time, due to the phase mismatch between individual laser units, the existence of reverse modes will lead to an increase in the far-field divergence angle and an unsatisfactory spot size, which seriously affects the quality and application range of the beam. Therefore, achieving stable co-directional, single-side mode output of the array has great prospects and significance. Summary of the invention

[0003] In view of this, the present disclosure provides a supersymmetric matched topologically protected semiconductor laser array including: a topological main array, used to generate an output light beam by pumping; and a supersymmetric companion array, arranged to be coupled and connected with the topological main array; wherein, by regulating the coupling distance between the topological main array and the supersymmetric companion array, the high-order mode in the light beam is coupled from the topological main array to the supersymmetric companion array through the evanescent wave coupling mechanism, and the lasing threshold of the high-order mode is regulated.

[0004] According to an embodiment of the present disclosure, the first Hamiltonian of the topological main array and the second Hamiltonian of the supersymmetric companion array are in a supersymmetric transformation relationship.

[0005] According to an embodiment of the present disclosure, a supersymmetric companion array includes: a plurality of lossy waveguides.

[0006] According to an embodiment of the present disclosure, the number of supersymmetric partner arrays includes one or two.

[0007] According to an embodiment of the present disclosure, when the number of supersymmetric companion arrays is two, the two supersymmetric companion arrays are configured with the topological main array as the center, and mirror images are distributed on both sides of the topological main array.

[0008] According to an embodiment of the present disclosure, the coupling distances between the two supersymmetric companion arrays and the topological main array are the same.

[0009] According to an embodiment of the present disclosure, the topological main array includes: a central waveguide; and two array-arranged waveguide units, which are configured with the central waveguide as the center and mirror-distributed on both sides of the central waveguide, and each waveguide unit includes a gain waveguide and a loss waveguide.

[0010] According to an embodiment of the present disclosure, the coupling distance between the gain waveguide and the loss waveguide in each waveguide unit is smaller than or larger than the coupling distance between two adjacent waveguide units.

[0011] According to an embodiment of the present disclosure, the topology main array includes a mediocre topology array or a non-mediocre topology array.

[0012] According to an embodiment of the present disclosure, it also includes: a P-type side electrode, an insulating layer, a P-type side waveguide, an active layer, an N-type side waveguide and an N-type side electrode arranged in sequence from top to bottom; wherein the topological main array and the supersymmetric companion array are arranged between the insulating layer and the P-type side waveguide.

[0013] The supersymmetric matched topologically protected semiconductor laser array provided in the embodiments of the present disclosure has at least the following beneficial effects:

[0014] By regulating the coupling distance between the topological main array and the supersymmetric companion array, the high-order modes are loss modulated, the lasing threshold of the high-order modes is increased, the stable emission of the fundamental mode is achieved, and the quality of the emitted light beam is improved.

[0015] Supersymmetric matched topologically protected semiconductor laser arrays do not require secondary epitaxial growth technology, reducing process costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0017] Figure 1 The structure diagram of the topologically protected semiconductor laser array with unilateral supersymmetric pair matching according to an embodiment of the present disclosure is schematically shown;

[0018] Figure 2 The structure diagram of the bilateral supersymmetric matching topologically protected semiconductor laser array according to the embodiment of the present disclosure is schematically shown;

[0019] Figure 3 A schematic diagram of the structure of a topological main array of an embodiment of the present disclosure is schematically shown;

[0020] Figure 4 A schematic diagram shows a central partial enlarged view of a planar mode field diagram of a topological mode according to an embodiment of the present disclosure;

[0021] Figure 5 A diagram schematically shows the relationship between the coupling strength between the single-sided supersymmetric companion array and the double-sided supersymmetric companion array and the topological main array and the minimum threshold gain difference between the fundamental mode and the high-order mode according to an embodiment of the present disclosure;

[0022] Figure 6aThe schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 300m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0023] Figure 6b The schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 485m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0024] Figure 6c The schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 600m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0025] Figure 6d The schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 700m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0026] Figure 7a The schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 400m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0027] Figure 7b The schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 600m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0028] Figure 7c The schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 880m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0029] Figure 7d The schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 1000m -1 The relationship between the imaginary part of the propagation constant and the detuning amount of the propagation constant when ;

[0030] Figure 8Schematically showing the distribution of the number of minimum threshold gain differences between the fundamental mode and the higher-order mode in 20 equidistant intervals of 20,000 random error calculations of the topologically protected semiconductor laser array with unilateral supersymmetric matching (a) and the topologically protected semiconductor laser array with bilateral supersymmetric matching (b) according to an embodiment of the present disclosure;

[0031] Description of reference numerals:

[0032] 1. P-type side electrode; 2. Insulating layer; 3. Waveguide in the topological main array region; 31. Central waveguide; 32. Loss waveguide of the waveguide unit of the topological main array; 33. Gain waveguide of the waveguide unit of the topological main array; 4- Waveguide in the supersymmetric companion array region; 5. P-type side waveguide; 6. Active layer; 7. N-type side waveguide; 8. N-type side electrode; n. Coupling distance between the gain waveguide and the loss waveguide in each waveguide unit; m. Coupling distance between two adjacent waveguide units; A1. Topological main array under unilateral supersymmetric matching; A2 , supersymmetric partner array under unilateral supersymmetric matching; B1, left supersymmetric partner array under bilateral supersymmetric matching; B2, topological main array under bilateral supersymmetric matching; B3, right supersymmetric partner array under bilateral supersymmetric matching; w0, coupling distance between the topological main array and the supersymmetric partner array under unilateral supersymmetric matching; w1, coupling distance between the topological main array and the left supersymmetric partner array under bilateral supersymmetric matching; w2, coupling distance between the topological main array and the right supersymmetric partner array under bilateral supersymmetric matching. DETAILED DESCRIPTION

[0033] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known systems and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0034] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0035] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0036] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0037] Figure 1 The structure diagram of the topologically protected semiconductor laser array with unilateral supersymmetric matching according to an embodiment of the present disclosure is schematically shown.

[0038] like Figure 1 As shown, the present disclosure provides a supersymmetric matched topologically protected semiconductor laser array, comprising: a topological main array A1 and a supersymmetric companion array A2.

[0039] Among them, the topological main array A1 is used to generate an output light beam through pumping.

[0040] The supersymmetric companion array A2 is arranged to be coupled with the topological main array.

[0041] By adjusting the coupling distance w0 between the topological main array and the supersymmetric companion array, the high-order modes in the output beam can be coupled from the topological main array to the supersymmetric companion array through the evanescent wave coupling mechanism, and the lasing threshold of the high-order modes can be adjusted.

[0042] In the embodiments of the present disclosure, the topological main array usually generates a fundamental mode of a localized topological boundary state, which can remain stable in the presence of defects or disorder, providing a highly robust mode. In addition, the generated fundamental mode is mainly concentrated at the central defect in the topological main array, and can preferentially obtain gain and start oscillation at a lower pump power.

[0043] However, in practical applications, the topological main array generates a certain proportion of high-order mode components while generating the fundamental mode. At this time, the minimum threshold gain difference between the fundamental mode and the high-order mode is small, which limits the stability and range of single-mode operation.

[0044] Based on this, this embodiment introduces supersymmetry theory based on the topological array. By setting a supersymmetric companion array coupled to the topological main array, when the magnitude of the injected current exceeds the preset value, the loss of the high-order mode can be increased to improve the threshold gain difference between the fundamental mode and the high-order mode, thereby ensuring the stability of single-mode operation in a wider current range. Specifically, by regulating the coupling distance between the topological main array and the supersymmetric companion array, the evanescent wave coupling intensity is controlled, so that the high-order mode in the output beam is efficiently transferred from the topological main array to the supersymmetric companion array through the evanescent wave coupling mechanism, thereby improving the lasing threshold of the high-order mode, effectively suppressing the emission of the high-order mode, and achieving stable output of the fundamental mode.

[0045] Compared with the traditional semiconductor laser array structure, this embodiment reduces the lateral divergence angle of the array structure and improves the quality of the light beam, expanding the range of single-mode operation. At the same time, no secondary epitaxy technology is required, and traditional semiconductor processing technology can be used for preparation, thereby reducing process costs.

[0046] According to an embodiment of the present disclosure, the first Hamiltonian of the topological main array and the second Hamiltonian of the supersymmetric companion array are in a supersymmetric transformation relationship.

[0047] In an embodiment of the present disclosure, an orthogonal matrix Q and an upper triangular matrix R are obtained by performing QR decomposition on the first Hamiltonian corresponding to the topological main array, a second Hamiltonian of supersymmetric matching is determined, and a supersymmetric companion array is determined based on the determined second Hamiltonian.

[0048] According to an embodiment of the present disclosure, a supersymmetric companion array includes: a plurality of lossy waveguides, which can increase the energy loss of high-order modes.

[0049] According to an embodiment of the present disclosure, the number of supersymmetric companion arrays includes one or two. The number of supersymmetric companion arrays can be set as needed. When the number is one, the prepared laser array has a simple structure and a smaller size, and is suitable for fields with slightly lower performance.

[0050] Figure 2 The structure diagram of the bilateral supersymmetric matching topologically protected semiconductor laser array according to an embodiment of the present disclosure is schematically shown.

[0051] like Figure 2As shown, according to an embodiment of the present disclosure, when the number of supersymmetric companion arrays is two, the two supersymmetric companion arrays B1 and B3 are configured with the topological main array B2 as the center, and are mirrored on both sides of the topological main array. The supersymmetric companion array on one side is obtained by performing QR decomposition on the first Hamiltonian corresponding to the topological main array to obtain an orthogonal matrix Q and an upper triangular matrix R, determining the second Hamiltonian of supersymmetric matching, and determining it based on the determined second Hamiltonian. The supersymmetric companion array on the other side is obtained by mirroring the supersymmetric companion array on the one side.

[0052] In the embodiment of the present disclosure, the number of supersymmetric companion arrays is two, which can achieve a higher threshold gain difference between the fundamental mode and the high-order mode, and has higher stability. The coupling distances w1 and w2 between the two supersymmetric companion arrays and the topological main array are the same. By setting the coupling distances between the two supersymmetric companion arrays and the topological main array to be the same, it can be ensured that energy is evenly transferred from the topological main array to the supersymmetric companion arrays on both sides, reducing phase mismatch, improving the overall stability and single-mode of the system, and simplifying the design and manufacture of the structure.

[0053] Figure 3 The structural diagram of the topological main array of the embodiment of the present disclosure is schematically shown.

[0054] like Figure 3 As shown, according to an embodiment of the present disclosure, the topological main array includes: a central waveguide 31 and two waveguide units arranged in an array, wherein the central waveguide 31 may be a gain waveguide.

[0055] The two array-arranged waveguide units are configured with the central waveguide as the center, and the mirror images are distributed on both sides of the central waveguide. Each waveguide unit includes a gain waveguide 33 and a loss waveguide 32.

[0056] In the embodiments of the present disclosure, a stable fundamental mode emission is achieved by forming a fundamental mode of a localized topological boundary state at the central waveguide. The gain waveguide is used to enable the fundamental mode of the topological boundary state to be excited and maintain a stable laser output, and the loss waveguide is used to increase the energy loss of the high-order mode. In the topological main array, the mode fields in adjacent waveguides can be coupled through evanescent waves by regulating the coupling distance between adjacent waveguides.

[0057] At the same time, the waveguide unit is composed of a gain waveguide and a loss waveguide, and the selective pumping maintains the PT (parity-time) symmetry, that is, the parity-time symmetry. The periodic arrays on both sides can be mediocre SSH (Su–Schrieffer–Heeger) model arrays, that is, there are two alternating coupling distances between the waveguides in the periodic array that satisfy the SSH model, ensuring that the topological mode will not be localized on both sides of the main array.

[0058] According to the embodiments of the present disclosure, the coupling distance m between the gain waveguide and the loss waveguide in each waveguide unit is less than or greater than the coupling distance n between two adjacent waveguide units. A fundamental mode of topological properties can be generated in the topological main array with high robustness.

[0059] According to the embodiments of the present disclosure, the topological main array can be a mediocre topological array, a non-mediocre topological array or other topological array structures, wherein the supersymmetric companion array is obtained by performing a supersymmetric transformation on the corresponding topological main array.

[0060] In the embodiment of the present disclosure, when the topology main array is a mediocre topology array, such as Figure 3 As shown, the coupling distances between the two waveguide units close to the central waveguide in the two waveguide unit arrays and the central waveguide are equal to the coupling distance between the two adjacent waveguide units, both of which are n, ensuring that the topological defect state is localized in the central waveguide. In addition, the coupling distance m between the gain waveguide and the loss waveguide in each waveguide unit is smaller than the coupling distance n between the two adjacent waveguide units.

[0061] When the topological main array is a non-trivial topological array, the coupling distances between the two waveguide units close to the central waveguide in the two waveguide unit arrays and the central waveguide are equal to the coupling distance between the gain waveguide and the loss waveguide in each waveguide unit. And the coupling distance m between the gain waveguide and the loss waveguide in each waveguide unit is greater than the coupling distance n between two adjacent waveguide units.

[0062] In some possible embodiments, the etching depths of the gain waveguide and the loss waveguide in the topological main array and the etching depth of the loss waveguide in the supersymmetric companion array are the same.

[0063] The widths of the gain waveguide and the loss waveguide in the topological primary array and the width of the loss waveguide in the supersymmetric companion array are the same.

[0064] In some possible embodiments, the mode fields of adjacent waveguides in the topological main array and the mode fields of adjacent waveguides in the supersymmetric companion array are coupled through evanescent waves, and the coupling strength can be controlled by controlling the distance between adjacent waveguides.

[0065] According to an embodiment of the present disclosure, a supersymmetric matched topologically protected semiconductor laser array includes: a P-type side electrode 1, an insulating layer 2, a P-type side waveguide 5, an active layer 6, an N-type side waveguide 7 and an N-type side electrode 8 arranged in sequence from top to bottom; wherein the topological main array and the supersymmetric companion array are coupled and connected and arranged between the P-type side waveguide 5 and the insulating layer 2.

[0066] In the examples disclosed herein, the P-type side electrode 1 and the N-type side electrode 8 are used for current injection; the insulating layer 2 is used to form an electrode window between the gain waveguide in the array and the P-type side electrode 1, or to form electrical isolation at the top of the loss waveguide in the array; the ridge waveguide 3 in the topological main array and the ridge waveguide 4 in the supersymmetric companion array are used to guide the refractive index of the light field, wherein the top of the electrode window forms an ohmic contact with the P-type side electrode 1; the active layer 6 is used for carrier recombination to generate photons and provide gain; the P-type side waveguide 5 and the N-type side waveguide 7 are used to expand the mode field and jointly confine carriers and photons in the active layer 6.

[0067] In the embodiment of the present disclosure, adjacent waveguides in the topological main array and adjacent waveguides in the supersymmetric companion array are coupled and connected via an isolation region. The high-doped layer in the isolation region is etched away, so that the lateral diffusion of the current is hindered, thereby ensuring the comparison of gain and loss.

[0068] In some possible embodiments, the materials of the P-type side waveguide and the N-type side waveguide may include but are not limited to GaN, GaAs, InP or GaSb.

[0069] The structure of the active layer may include, but is not limited to, a single quantum well, multiple quantum wells, quantum dots, or a superlattice structure.

[0070] In some possible embodiments, the etching depth of the ridge waveguide 3 in the topological main array region and the ridge waveguide 4 in the supersymmetric pair companion array region can be 1.6 μm, so that the top high-doping layer of the isolation region between adjacent waveguides is etched away, limiting the lateral diffusion of the injected current in the gain waveguide. In addition, the refractive index guidance provided by the etching depth of 1.6 μm can better limit the mode field and improve the optical confinement factor without increasing the loss due to being too close to the active layer 6.

[0071] The width of the ridge waveguide 3 in the topological main array area and the ridge waveguide 4 in the supersymmetric companion array area can be 3μm. This width ensures that the confinement factors of the fundamental mode and the higher-order mode are greatly different, resulting in a large threshold difference, which can ensure single-side mode lasing of a single waveguide.

[0072] The number of waveguide units in the two array-arranged waveguide units in the topological main array can be 5, that is, 5 waveguide units are mirror-distributed on both sides of the central waveguide. The number of ridge waveguides arranged in the array in the supersymmetric companion array on the corresponding generated side is 20. It should be noted that the number of waveguide units is not limited to this and can be set as needed.

[0073] In the topological main array, the alternating coupling distances can be 1.3μm and 2.6μm, that is, the coupling distance between the gain waveguide and the loss waveguide in the waveguide unit is 1.3μm, and the coupling distance between two adjacent waveguide units is 2.6μm. In the supersymmetric companion array, the coupling distances from the waveguide close to the topological main array to the waveguide far away from the topological main array are 1.3μm, 2.6μm, 1.3μm, 2.6μm, 1.3μm, 2.6μm, 1.3μm, 2.66μm, 1.25μm, 3.9μm, 1.3μm, 2.6μm, 1.3μm, 2.6μm, 1.3μm, 2.6μm, 1.3μm, 2.6μm, 1.3μm, 2.6μm, 1.3μm, 2.67μm and 1.24μm.

[0074] It should be noted that the etching depth of 1.6 μm is a preferred embodiment, but is not limited thereto, and the waveguide width of 3 μm is a preferred embodiment, but is not limited thereto.

[0075] Figure 4 A central partial enlarged diagram of a planar mode field diagram of a topological mode according to an embodiment of the present disclosure is schematically shown.

[0076] like Figure 4 As shown, it can be seen that this topological mode is localized in the central area of ​​the topological main array, and its mode field is localized in a unit in the periodic waveguides on both sides, which reflects its topological properties.

[0077] Figure 5 The diagram schematically shows the relationship between the coupling strength between the single-sided supersymmetric companion array and the double-sided supersymmetric companion array and the topological main array respectively and the minimum threshold gain difference between the fundamental mode and the high-order mode according to the embodiments of the present disclosure.

[0078] like Figure 5 As shown, the coupling strength κ between the topological main array and the supersymmetric companion array is controlled by the coupling distance w0 under unilateral supersymmetric matching and the coupling distances w1 and w2 under bilateral supersymmetric matching.

[0079] For unilateral supersymmetric matching, the coupling strength is 336 m -1 and 637m -1 There are steps in the range, which keeps the threshold gain difference at a large value, but the threshold gain difference will drop sharply on both sides of the step, which will affect the stability of the device, so that experimental errors and defects may have a greater impact on the device and reduce the yield.

[0080] For bilateral supersymmetric matching, although its peak threshold gain difference is slightly inferior to that of unilateral supersymmetric matching, its step region range has been expanded, which is more than three times that of unilateral supersymmetric matching, so its robustness will be improved.

[0081] Figure 6aThe schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 300m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0082] Figure 6b The schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 485m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0083] Figure 6c The schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 600m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0084] Figure 6d The schematic diagram shows that the coupling strength between the unilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 700m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0085] Depend on Figure 6a , Figure 6b , Figure 6c and Figure 6d As shown, for unilateral supersymmetric matching, outside the step region, if the coupling strength is 300m -1 and 700m -1 When the high-order side mode gains, its mode field will be distributed and enhanced in the gain waveguide area, and the mode field limitation factor will increase, resulting in a decrease in the threshold, so that the minimum threshold gain difference between the fundamental mode and other high-order modes will decrease. Therefore, for the stability of the device, the coupling strength can be set to 485m -1 , corresponding to a coupling distance w0 of 3.2μm.

[0086] Figure 7a The schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 400m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0087] Figure 7b The schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 600m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0088] Figure 7cThe schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 880m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0089] Figure 7d The schematic diagram shows that the coupling strength between the bilateral supersymmetric companion array and the topological main array according to the embodiment of the present disclosure is 1000m -1 The relationship between the imaginary part of the propagation constant and the detuning of the propagation constant when .

[0090] Depend on Figure 7a , Figure 7b , Figure 7c and Figure 7d As shown, the stability of bilateral supersymmetric matching is improved compared with unilateral supersymmetric matching, and the coupling strength can be set to 880m -1 , corresponding to the coupling distances w1 and w2 being 2.5 μm, the performance of the corresponding device is more stable.

[0091] Figure 8 The figure schematically shows the distribution of the number of equidistant intervals of 20 of the minimum threshold gain difference between the fundamental mode and the higher-order mode of the topologically protected semiconductor laser array with single-sided supersymmetric matching and the topologically protected semiconductor laser array with double-sided supersymmetric matching according to the embodiment of the present disclosure, after 20,000 random error calculations.

[0092] like Figure 8 As shown, (a) is a single-sided supersymmetric matching, and (b) is a double-sided supersymmetric matching. The experimental error distribution is considered to be a Gaussian distribution, and a total of 20,000 random error calculations are performed randomly, and the minimum threshold gain difference between the fundamental mode and other high-order modes is statistically calculated.

[0093] It can be seen that the unilateral supersymmetric matching model and the bilateral supersymmetric matching model have different distributions. The average results show that the minimum threshold gain difference between the fundamental mode and other high-order modes under unilateral supersymmetric matching and bilateral supersymmetric matching is 10.20m -1 and 12.67m -1 .

[0094] Therefore, the bilateral supersymmetric matching design has better stability than the unilateral supersymmetric matching. However, the unilateral supersymmetric matching has a smaller size and has certain application scenarios when the performance requirements are not very strict. Therefore, the appropriate choice can be made according to the application requirements.

[0095] It will be appreciated by those skilled in the art that the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways, even if such combinations and / or combinations are not explicitly described in the present disclosure. In particular, the features described in the various embodiments and / or claims of the present disclosure may be combined and / or combined in a variety of ways without departing from the spirit and teachings of the present disclosure. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0096] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. The scope of the present disclosure is defined by the attached claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A supersymmetric matched topologically protected semiconductor laser array, characterized in that: include: a topological master array for generating an output beam by pumping; as well as A supersymmetric companion array is arranged to be coupled and connected with the topological main array; By adjusting the coupling distance between the topological main array and the supersymmetric companion array, the high-order mode in the light beam is coupled from the topological main array to the supersymmetric companion array through the evanescent wave coupling mechanism, and the lasing threshold of the high-order mode is adjusted.

2. The supersymmetric matched topologically protected semiconductor laser array according to claim 1, characterized in that: The first Hamiltonian of the topological main array and the second Hamiltonian of the supersymmetric companion array are in a supersymmetric transformation relationship.

3. The supersymmetric matched topologically protected semiconductor laser array according to claim 2, characterized in that: The supersymmetric companion array includes: a plurality of lossy waveguides.

4. The supersymmetric matched topologically protected semiconductor laser array according to claim 3, characterized in that: The number of the supersymmetric partner arrays includes one or two.

5. The supersymmetric matched topologically protected semiconductor laser array according to claim 4, characterized in that: When the number of the supersymmetric companion arrays is two, the two supersymmetric companion arrays are configured with the topological main array as the center, and mirror images are distributed on both sides of the topological main array.

6. The supersymmetric matched topologically protected semiconductor laser array according to claim 5, characterized in that: The coupling distances between the two supersymmetric companion arrays and the topological main array are the same.

7. The supersymmetric matched topologically protected semiconductor laser array according to claim 6, characterized in that: The topology main array includes: a central waveguide; and Two array-arranged waveguide units are configured with the central waveguide as the center and mirror images are distributed on both sides of the central waveguide. Each of the waveguide units includes a gain waveguide and a loss waveguide.

8. The supersymmetric matched topologically protected semiconductor laser array according to claim 7, characterized in that: The coupling distance between the gain waveguide and the loss waveguide in each of the waveguide units is smaller than or larger than the coupling distance between two adjacent waveguide units.

9. The supersymmetric matched topologically protected semiconductor laser array according to claim 7, characterized in that: The topology main array includes a mediocre topology array or a non-mediocre topology array.

10. The supersymmetric matched topologically protected semiconductor laser array according to claim 9, characterized in that: Also includes: A P-type side electrode, an insulating layer, a P-type side waveguide, an active layer, an N-type side waveguide and an N-type side electrode are arranged in sequence from top to bottom; wherein the topological main array and the supersymmetric companion array are arranged between the insulating layer and the P-type side waveguide.

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