Electronic chip heat dissipation mechanism, heat dissipation circuit processing method and electrical equipment

Abstract

The invention provides an electronic chip heat dissipation mechanism, a heat dissipation circuit processing method and electrical equipment, and relates to the technical field of electrical equipment heat dissipation. According to the electronic chip heat dissipation mechanism, a double-face copper-clad plate piece with a first copper-clad layer, a heat conduction insulating substrate and a second copper-clad layer arranged in sequence is adopted; the first copper-clad layer is processed to form a circuit structure and is welded with the chip, the second copper-clad layer is connected with the heat pipe, the heat-conducting insulating substrate has heat-conducting and insulating functions, the structural composition is simpler, the heat dissipation path of the chip is shortened, and the heat dissipation efficiency of the chip is improved. In the processing method of the heat dissipation circuit, the heat pipe is firstly brazed and connected, the chip and the passive auxiliary device are welded and installed, and finally the heat pipe is filled with the heat exchange medium, so that the adverse effect of high thermal conductivity of the heat pipe on brazing is avoided, the heat exchange medium can be prevented from deteriorating due to the influence of the welding temperature, and the process design is more reasonable.

Description

Technical Field

[0001] The present invention relates to the technical field of electrical heat dissipation, and in particular to an electronic chip heat dissipation mechanism, a heat dissipation circuit processing method and electrical equipment. Background Art

[0002] As the power density of electronic chips gradually increases, the requirements for the heat dissipation performance of electronic chips in the production of electrical equipment are gradually increasing. Usually, the power chip is welded on a ceramic copper clad laminate, which is welded on a substrate made of tungsten copper alloy or aluminum silicon carbide, and the heat is conducted to the heat sink through the substrate. There are multiple interfaces in the heat dissipation process, thus forming multi-level interface thermal resistance, and the interface has thermal stress due to different thermal expansion coefficients, which affects the reliability of the chip packaging structure.

[0003] In addition, in the electronic chip cooling mechanism that uses heat pipes for heat dissipation, the electronic chip as the heat source needs to be packaged and installed on the circuit board, and then installed together with the heat pipe. The electronic chip packaging needs to consider factors such as electrical insulation. The packaging uses materials with poor thermal conductivity such as epoxy resin and silicone resin. The thermal resistance of the path in which the heat generated by the electronic chip is conducted to the heat pipe is relatively large, which in turn affects the heat dissipation effect of the electronic chip. Summary of the invention

[0004] The object of the present invention is to provide an electronic chip heat dissipation mechanism, a heat dissipation circuit processing method and an electrical device to alleviate the technical problem of low chip heat dissipation efficiency in the prior art.

[0005] In a first aspect, the electronic chip heat dissipation mechanism provided by the present invention comprises: a heat-conducting insulating substrate, a first copper-clad layer, a second copper-clad layer and a heat pipe;

[0006] The first copper clad layer is disposed on the upper surface of the thermally conductive insulating substrate, and the first copper clad layer is processed to form a circuit structure and a chip is welded;

[0007] The second copper clad layer is disposed on the lower surface of the thermally conductive insulating substrate, and the second copper clad layer is connected to the heat pipe.

[0008] In combination with the first aspect, the present invention provides a first possible implementation of the first aspect, wherein the thermally conductive insulating substrate uses thermally conductive ceramics, and the thermally conductive ceramics are configured as one of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide.

[0009] In combination with the first aspect, the present invention provides a second possible implementation manner of the first aspect, wherein an end of the heat pipe away from the thermally conductive insulating substrate is connected to a heat sink.

[0010] In combination with the first aspect, the present invention provides a third possible implementation of the first aspect, wherein the heat pipe is compressed into a flat structure along a direction perpendicular to the thermally conductive insulating substrate and has a plane that fits the second copper cladding layer.

[0011] In combination with the first aspect, the present invention provides a fourth possible implementation of the first aspect, wherein the heat pipe is filled with a low boiling point medium, and the low boiling point medium is configured as one of methyl ether, ethyl ether, hexane and petroleum ether.

[0012] In a second aspect, the present invention provides a method for processing a heat dissipation circuit, comprising the following steps:

[0013] A double-sided copper-clad board is used in which a first copper-clad layer, a heat-conducting insulating substrate and a second copper-clad layer are sequentially arranged, and a circuit structure is formed on the first copper-clad layer;

[0014] welding the second copper cladding layer to the heat pipe;

[0015] Soldering chips and passive auxiliary components on the first copper clad layer;

[0016] The heat pipe is filled with heat exchange medium.

[0017] In combination with the second aspect, the present invention provides a first possible implementation manner of the second aspect, wherein the step of welding the second copper cladding layer to the heat pipe comprises:

[0018] The second copper cladding layer is connected to the heat pipe by welding using a brazing process;

[0019] Wherein, the soldering process temperature is lower than the copper cladding process temperature of the first copper cladding layer and the second copper cladding layer.

[0020] In combination with the second aspect, the present invention provides a second possible implementation of the second aspect, wherein the heat exchange medium is a low boiling point medium, and the low boiling point medium is configured as one of methyl ether, ethyl ether, hexane and petroleum ether.

[0021] In combination with the second aspect, the present invention provides a third possible implementation of the second aspect, wherein the thermally conductive insulating substrate uses thermally conductive ceramics, and the thermally conductive ceramics are configured as one of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide.

[0022] In a third aspect, the electrical equipment provided by the present invention is equipped with the electronic chip heat dissipation mechanism recorded in the first aspect, or is produced using the heat dissipation circuit processing method recorded in the second aspect.

[0023] The embodiments of the present invention bring the following beneficial effects: a double-sided copper-clad plate member is adopted in which a first copper-clad layer, a thermally conductive insulating substrate and a second copper-clad layer are arranged in sequence; the first copper-clad layer is processed to form a circuit structure and a chip is welded; the second copper-clad layer is connected to a heat pipe; the thermally conductive insulating substrate has both thermal conductive and insulating functions; the structural composition is more streamlined, the chip heat dissipation path is shortened, and the chip heat dissipation efficiency is improved.

[0024] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the related technologies, the drawings required for use in the specific embodiments or the related technical descriptions will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 A partially enlarged schematic diagram of an electronic chip heat dissipation mechanism provided by an embodiment of the present invention;

[0027] Figure 2 A schematic diagram of an electronic chip heat dissipation mechanism provided by an embodiment of the present invention;

[0028] Figure 3 A schematic flow chart of a heat dissipation circuit processing method provided in an embodiment of the present invention.

[0029] Icons: 100 - thermally conductive insulating substrate; 200 - first copper cladding layer; 300 - second copper cladding layer; 400 - heat pipe; 500 - chip; 600 - passive auxiliary device; 700 - lead; 800 - soldering structure; 900 - heat sink. DETAILED DESCRIPTION

[0030] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. Physical quantities in formulas, if not separately marked, should be understood as basic quantities of the base units of the International System of Units, or derived quantities derived from the basic quantities through mathematical operations such as multiplication, division, differentiation or integration.

[0032] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] like Figure 1 and Figure 2 As shown, the electronic chip heat dissipation mechanism provided by the embodiment of the present invention includes: a thermally conductive insulating substrate 100, a first copper clad layer 200, a second copper clad layer 300 and a heat pipe 400; the first copper clad layer 200 is arranged on the upper surface of the thermally conductive insulating substrate 100, and the first copper clad layer 200 is processed to form a circuit structure and the chip 500 is welded; the second copper clad layer 300 is arranged on the lower surface of the thermally conductive insulating substrate 100, and the second copper clad layer 300 is connected to the heat pipe 400.

[0034] Specifically, the first copper cladding layer 200 directly forms the circuit structure required for packaging through corrosion process or mechanical processing, and the thermally conductive insulating substrate 100 has both thermal conductivity and electrical insulation functions, thereby simplifying the packaging structure, shortening the heat dissipation path of the chip 500, and improving the heat dissipation efficiency.

[0035] In the embodiment of the present invention, the thermally conductive insulating substrate 100 is made of thermally conductive ceramic, which is configured as one of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide. The thermally conductive ceramic has high thermal conductivity and can improve the heat dissipation efficiency of the chip 500.

[0036] In addition, one end of the heat pipe 400 away from the thermally conductive insulating substrate 100 is connected to a heat sink 900 . The heat sink 900 may have a fin structure such as copper or aluminum, or may have a water jacket or other water cooling device.

[0037] Furthermore, the heat pipe 400 is compressed into a flat structure in a direction perpendicular to the thermally conductive insulating substrate 100 and has a plane that fits the second copper cladding layer 300. On the one hand, this increases the contact area between the second copper cladding layer 300 and the heat pipe 400, facilitating subsequent brazing; on the other hand, it is beneficial to thermal expansion matching and improves structural reliability.

[0038] It should be noted that the heat pipe 400 is filled with a low boiling point medium, and the low boiling point medium is configured as one of methyl ether, ethyl ether, hexane and petroleum ether.

[0039] like Figure 1 and Figure 3 As shown, the heat dissipation circuit processing method provided by the embodiment of the present invention corresponds to the processing to form the above-mentioned electronic chip heat dissipation mechanism, and includes the following steps:

[0040] A double-sided copper-clad board is provided with a first copper-clad layer 200, a heat-conducting insulating substrate 100 and a second copper-clad layer 300 in sequence, and a circuit structure is formed on the first copper-clad layer 200;

[0041] Welding the second copper cladding layer 300 to the heat pipe 400;

[0042] The chip 500 and the passive auxiliary device 600 are welded on the first copper cladding layer 200 ; in addition, the lead wire 700 can also be welded on the first copper cladding layer 200 .

[0043] The heat pipe 400 is filled with heat exchange medium, and after filling, the end of the heat pipe 400 is sealed to achieve sealing of the heat pipe 400.

[0044] In the heat dissipation circuit processing method, the second copper cladding layer 300 and the heat pipe 400 are firstly welded, and the chip 500 and the passive auxiliary device 600 are welded on the first copper cladding layer 200, and then the heat exchange medium is filled into the heat pipe 400, so as to avoid the high thermal conductivity of the heat pipe 400 affecting the welding of the heat pipe 400, the chip 500 and the passive auxiliary device 600, and also avoid the heat of welding causing the heat exchange medium in the heat pipe 400 to deteriorate.

[0045] In the embodiment of the present invention, the step of welding the second copper cladding layer 300 to the heat pipe 400 includes:

[0046] The second copper clad layer 300 and the heat pipe 400 are connected by soldering process, and the soldering structure 800 is filled between the second copper clad layer 300 and the heat pipe 400 to ensure the connection and heat conduction between the second copper clad layer 300 and the heat pipe 400.

[0047] The soldering process temperature is lower than the copper cladding process temperature of the first copper cladding layer 200 and the second copper cladding layer 300 , and the soldering process uses a low-temperature metal solder with a high silver content to avoid damage to the copper cladding layer caused by the soldering process of the heat pipe 400 .

[0048] The electrical equipment provided by the embodiment of the present invention is equipped with the electronic chip heat dissipation mechanism recorded in the above-mentioned embodiment, or the production of the electrical equipment adopts the heat dissipation circuit processing method recorded in the above-mentioned embodiment. The electrical equipment has the technical advantages of the above-mentioned electronic chip heat dissipation mechanism and heat dissipation circuit processing method, which will not be repeated here.

[0049] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electronic chip heat dissipation mechanism, characterized in that: include: A heat-conductive insulating substrate (100), a first copper-clad layer (200), a second copper-clad layer (300), and a heat pipe (400); The first copper clad layer (200) is arranged on the upper surface of the thermally conductive insulating substrate (100), and the first copper clad layer (200) is processed to form a circuit structure and a chip (500) is welded; The second copper cladding layer (300) is arranged on the lower surface of the thermally conductive insulating substrate (100), and the second copper cladding layer (300) is connected to the heat pipe (400).

2. The electronic chip heat dissipation mechanism according to claim 1, characterized in that: The thermally conductive insulating substrate (100) is made of thermally conductive ceramic, and the thermally conductive ceramic is configured as one of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide.

3. The electronic chip heat dissipation mechanism according to claim 1, characterized in that: One end of the heat pipe (400) away from the thermally conductive insulating substrate (100) is connected to a heat sink (900).

4. The electronic chip heat dissipation mechanism according to claim 1, characterized in that: The heat pipe (400) is compressed into a flat structure along a direction perpendicular to the thermally conductive insulating substrate (100), and has a plane that is in contact with the second copper cladding layer (300).

5. The electronic chip heat dissipation mechanism according to claim 1, characterized in that: The heat pipe (400) is filled with a low boiling point medium, and the low boiling point medium is configured as one of methyl ether, ethyl ether, hexane and petroleum ether.

6. A heat dissipation circuit processing method, characterized in that: The following steps are involved: A double-sided copper-clad plate member having a first copper-clad layer (200), a heat-conducting insulating substrate (100) and a second copper-clad layer (300) arranged in sequence is used, and a circuit structure is formed on the first copper-clad layer (200); welding the second copper cladding layer (300) to the heat pipe (400); Soldering a chip (500) and a passive auxiliary device (600) on the first copper cladding layer (200); The heat pipe (400) is filled with heat exchange medium.

7. The heat dissipation circuit processing method according to claim 6, characterized in that: The step of welding the second copper cladding layer (300) to the heat pipe (400) comprises: The second copper cladding layer (300) and the heat pipe (400) are connected by welding using a brazing process; Wherein, the soldering process temperature is lower than the copper cladding process temperature of the first copper cladding layer (200) and the second copper cladding layer (300).

8. The heat dissipation circuit processing method according to claim 6, characterized in that: The heat exchange medium is a low boiling point medium, and the low boiling point medium is configured as one of methyl ether, ethyl ether, hexane and petroleum ether.

9. The heat dissipation circuit processing method according to claim 6, characterized in that: The thermally conductive insulating substrate (100) is made of thermally conductive ceramic, and the thermally conductive ceramic is configured as one of aluminum oxide, aluminum nitride, silicon nitride and beryllium oxide.

10. An electrical device, characterized in that: The electrical device is equipped with the electronic chip heat dissipation mechanism described in any one of claims 1 to 5, or the production of the electrical device adopts the heat dissipation circuit processing method described in any one of claims 6 to 9.

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