Light emitting diode and display panel

Abstract

The embodiment of the invention discloses a light emitting diode and a display panel, the light emitting diode comprises a first semiconductor layer, an active layer, a second semiconductor layer and a current diffusion layer which are sequentially stacked, the current diffusion layer is arranged in the middle area and the edge area of the second semiconductor layer, and the current diffusion layer is arranged on the second semiconductor layer. Current can be quickly diffused to the whole surface of the second semiconductor layer, and the current density of the current diffusion layer located in the edge area of the second semiconductor layer is larger than that of the current diffusion layer located in the middle area of the second semiconductor layer. In other words, under the power-on condition, the current density of the current diffusion layer located in the edge area is larger than that of the current diffusion layer located in the middle area, the magnitude of current in the edge area is improved so as to compensate defects existing in the edge of the epitaxial layer formed through etching in the semiconductor technology, and therefore the uniformity of light emitting is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light emitting diode and a display panel. Background Art

[0002] Micro-LEDs are suitable for high-resolution displays due to their miniaturization and high brightness. Such displays have high pixel density, lower brightness requirements for single lamps, and seek higher display uniformity and efficiency. The current technical solution is to introduce a current blocking layer into the micro-LED. The function of the current blocking layer is to limit the current to enter the active layer of the LED only through the opening area, so as to improve the luminous efficiency of the micro-LED at a small size.

[0003] In the process of research and practice of the prior art, the inventors of the present application found that there may be a risk of uneven diffusion of current flowing in along the opening area, resulting in uneven or no light emission in the edge area of ​​the active layer; the light-emitting area is smaller than the chip area, affecting the near-field light type. Summary of the invention

[0004] The embodiments of the present application provide a light emitting diode and a display panel, which can improve the light emission uniformity of the light emitting diode.

[0005] The present invention provides a light emitting diode, which includes:

[0006] a first semiconductor layer;

[0007] An active layer, disposed on the first semiconductor layer;

[0008] A second semiconductor layer is disposed on a side of the active layer away from the first semiconductor layer, the second semiconductor layer comprising a middle region and an edge region surrounding the middle region; and

[0009] A current diffusion layer is arranged on a side of the second semiconductor layer away from the active layer; the current diffusion layer is configured to receive current and transmit the current to the second semiconductor layer;

[0010] The current diffusion layer is arranged in the middle region and the edge region, and the current density of the current diffusion layer in the edge region is greater than the current density of the current diffusion layer in the middle region.

[0011] Optionally, in some embodiments of the present application, the current diffusion layer is disposed on the entire surface and continuously covers the middle region and edge region of the second semiconductor layer, and the current diffusion layer includes a first portion and a second portion connected, the first portion is disposed correspondingly in the middle region of the second semiconductor layer, and the second portion is disposed correspondingly in the edge region of the second semiconductor layer;

[0012] The thickness of the second portion is greater than the thickness of the first portion.

[0013] Optionally, in some embodiments of the present application, the thickness of the second portion increases gradually from the middle area to the edge area.

[0014] Optionally, in some embodiments of the present application, the current diffusion layer includes a plurality of conductive portions, two adjacent conductive portions are arranged spaced apart from each other, some of the plurality of conductive portions are arranged in the middle region of the second semiconductor layer, and another part of the plurality of conductive portions are arranged in the edge region of the second semiconductor layer;

[0015] In the light-emitting diode viewed from a top view, the ratio of the total area of ​​all the conductive parts located in the middle area to the total area of ​​the middle area is a first ratio, and the ratio of the total area of ​​all the conductive parts located in the edge area to the total area of ​​the edge area is a second ratio, and the first ratio is smaller than the second ratio.

[0016] Optionally, in some embodiments of the present application, in the light-emitting diode in a top view, a plurality of the conductive portions are arranged at intervals from the center of the second semiconductor layer toward the peripheral edges, and in any two adjacent conductive portions, one conductive portion is arranged around the outer periphery of the other conductive portion;

[0017] The area of ​​the conductive portion increases gradually from the center of the second semiconductor layer to the peripheral edges.

[0018] Optionally, in some embodiments of the present application, each of the conductive portions includes a plurality of sub-conductive portions and sub-connecting portions that are spaced apart from each other, any two adjacent sub-conductive portions are connected via the sub-connecting portions, and a width of the sub-connecting portions is smaller than a width of the sub-conductive portions;

[0019] In the light-emitting diode viewed from a top view, in each of the conductive portions, the ratio of the total area of ​​all the sub-conductive portions to the total area of ​​the conductive portion is a third ratio, and the third ratio increases from the center of the second semiconductor layer toward the surrounding edges.

[0020] Optionally, in some embodiments of the present application, the number of sub-conductive portions of the conductive portion increases gradually from the center of the second semiconductor layer toward the edges thereof.

[0021] Optionally, in some embodiments of the present application, the innermost conductive portion among the multiple conductive portions is a central conductive portion, and a sub-conductive portion located at a central position in the central conductive portion overlaps with the center of the second semiconductor layer.

[0022] Optionally, in some embodiments of the present application, the distance between two adjacent conductive parts decreases from the center of the second semiconductor layer to the edges thereof.

[0023] Optionally, in some embodiments of the present application, in the light emitting diode viewed from a top view, all of the conductive parts are ring-shaped structures, and the center of the second semiconductor layer is located in the inner circle region of all of the conductive parts.

[0024] Optionally, in some embodiments of the present application, in the light-emitting diode viewed from a top view, all of the conductive portions are ring-shaped structures, and the width of the conductive portions increases gradually from the center of the second semiconductor layer toward the surrounding edges.

[0025] Optionally, in some embodiments of the present application, the plurality of conductive portions include a central conductive portion and at least two peripheral conductive portions, the peripheral conductive portion is a ring-shaped structure, the peripheral conductive portion surrounds the outer circumference of the central conductive portion, and in the light-emitting diode viewed from a top view, the central conductive portion covers the center of the second semiconductor layer;

[0026] The width of the central conductive portion is smaller than the width of all the peripheral conductive portions, and the width of the peripheral conductive portions increases gradually from the center to the peripheral edges of the second semiconductor layer.

[0027] Optionally, in some embodiments of the present application, the thickness of the conductive portion increases gradually from the center of the second semiconductor layer toward the edges thereof.

[0028] Optionally, in some embodiments of the present application, in the current diffusion layer, any two adjacent conductive parts are disconnected and insulated;

[0029] The light-emitting diode also includes a first electrode, a second electrode and an insulating layer, the first electrode is connected to the first semiconductor layer, the insulating layer is arranged in the same layer as the conductive part and is arranged on the outer peripheral side of the conductive part, the second electrode covers the insulating layer and the conductive part, and the second electrode simultaneously connects all the conductive parts.

[0030] Optionally, in some embodiments of the present application, the light-emitting diode further includes a first electrode and a second electrode, the first electrode is connected to the first semiconductor layer, and the second electrode is connected to a side of the current diffusion layer away from the active layer.

[0031] Optionally, in some embodiments of the present application, in the light emitting diode viewed from a top view, a pattern of the current diffusion layer is a centrally symmetrical pattern about the center of the second semiconductor layer.

[0032] Correspondingly, an embodiment of the present application further provides a display panel, which includes a driving substrate and a light-emitting diode as described in any one of the above embodiments, wherein the light-emitting diode is arranged on the driving substrate.

[0033] The light-emitting diode and display panel of the embodiment of the present application are provided with a current diffusion layer on the second semiconductor layer, so that the current can be quickly diffused to the entire surface of the second semiconductor layer, and the current density of the current diffusion layer in the edge area of ​​the second semiconductor layer is greater than the current density of the current diffusion layer in the middle area of ​​the second semiconductor layer. That is to say, when the power is turned on, the current density of the current diffusion layer in the edge area is greater than the current density of the current diffusion layer in the middle area, and the current amount in the edge area is increased to compensate for the defects existing at the edge of the epitaxial layer (the stack of the first semiconductor layer, the active layer and the second semiconductor layer) etched and formed under the semiconductor process, thereby improving the uniformity of light emission. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a schematic diagram of the cross-sectional structure of a light emitting diode provided in an embodiment of the present application;

[0035] Figure 2 is another schematic diagram of a cross-sectional structure of a light emitting diode provided in an embodiment of the present application;

[0036] Figure 3 is another schematic cross-sectional structure diagram of a light emitting diode provided in an embodiment of the present application;

[0037] Figure 4 is a schematic top view of a light emitting diode provided in an embodiment of the present application;

[0038] Figure 5 is another schematic top view of a light emitting diode provided in an embodiment of the present application;

[0039] Figure 6 is another schematic cross-sectional structure diagram of a light emitting diode provided in an embodiment of the present application;

[0040] Figure 7 is another schematic top view of a light emitting diode provided in an embodiment of the present application;

[0041] Figure 8 is another schematic top view of a light emitting diode provided in an embodiment of the present application;

[0042] Fig. 9 is yet another schematic top view of a light emitting diode provided in an embodiment of the present application;

[0043] Fig.10It is a schematic diagram of the structure of the display panel provided in the embodiment of the present application. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, the various embodiments can be combined with each other but will not be repeated one by one, and in the absence of contrary instructions, the directional words used, such as "upper" and "lower", usually refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the drawings; while "inside" and "outside" refer to the outline of the device; the terms "first", "second", "third", etc. are used only as markings, and no numerical requirements are imposed or order is established.

[0045] The embodiments of the present application provide a light emitting diode and a display panel, which are described in detail below. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments.

[0046] Please refer to Figure 1 The embodiment of the present application provides a light emitting diode 100 , which includes a first semiconductor layer 11 , an active layer 12 , a second semiconductor layer 13 and a current diffusion layer 14 .

[0047] The active layer 12 is disposed on the first semiconductor layer 11. The second semiconductor layer 13 is disposed on a side of the active layer 12 away from the first semiconductor layer 11. The second semiconductor layer 13 includes a middle region 13a and an edge region 13b surrounding the middle region 13a. The current diffusion layer 14 is disposed on a side of the second semiconductor layer 13 away from the active layer 12.

[0048] The current diffusion layer 14 is configured to receive current and transmit the current to the second semiconductor layer 13 .

[0049] The current diffusion layer 14 is disposed in the middle region 13a and the edge region 13b. The current density of the current diffusion layer 14 in the edge region 13b is greater than the current density of the current diffusion layer 14 in the middle region 13a.

[0050] The light emitting diode 100 of the embodiment of the present application is provided with a current diffusion layer 14 on the second semiconductor layer 13 , so that the current can be quickly diffused to the entire surface of the second semiconductor layer 13 , thereby improving the uniformity of light emission.

[0051] In addition, it should be noted that the edge of the epitaxial layer etched and formed in the semiconductor process may have defects, unevenness, etc., resulting in uneven current diffusion.

[0052] Based on this, the light-emitting diode 100 of the embodiment of the present application sets the current density of the current diffusion layer 14 located in the edge area 13b of the second semiconductor layer 13 to be greater than the current density of the current diffusion layer 14 located in the middle area 13a of the second semiconductor layer 13. Among them, the current density is the amount of electricity passing through a unit area per unit time. In other words, when the power is turned on, the current density of the current diffusion layer 14 located in the edge area 13b is greater than the current density of the current diffusion layer 14 located in the middle area 13a, and the current amount in the edge area 13b is increased to compensate for the defects at the edge of the epitaxial layer (the stacking structure of the first semiconductor layer 11, the active layer 12 and the second semiconductor layer 13) etched and formed under the semiconductor process, thereby improving the uniformity of the light emission of the light-emitting diode 100.

[0053] It can be understood that, in some embodiments, the second semiconductor layer 13 completely covers the active layer 12 , and the shape of the second semiconductor layer 13 is the same as that of the active layer 12 .

[0054] Optionally, in a top view of the light emitting diode 100 , the edge region 13 b surrounds the circumference of the middle region 13 a to form an annular region, and the middle region 13 a is arranged in an inner circle of the edge region 13 b .

[0055] Among them, in the long side direction of the second semiconductor layer 13, the width of the single-sided edge region 13b is between 1 / 10 and 1 / 4 of the long side of the second semiconductor layer 13, such as 1 / 10, 1 / 6 or 1 / 4, etc.; in the short side direction of the second semiconductor layer 13, the width of the single-sided edge region 13b is between 1 / 10 and 1 / 4 of the short side of the second semiconductor layer 13, such as 1 / 10, 1 / 6 or 1 / 4, etc.

[0056] Alternatively, in some embodiments, the width of the edge region 13b is a constant width, and the specific width is determined according to the etching condition of the edge portion of the epitaxial layer, as long as the edge portion with etching defects in the epitaxial layer is within the range of the edge region 13b. Further, it can also be based on the edge portion including the etching defects, and exceed the appropriate range, which can be between 1 micron and 50 microns, or a larger range, which is not limited here.

[0057] Optionally, the light emitting diode 100 further includes a first electrode 15 and a second electrode 16. The first electrode 15 is connected to the first semiconductor layer 11, and the second electrode 16 is connected to a side of the current diffusion layer 14 away from the active layer 12.

[0058] The first electrode 15 is configured to provide an external current to the first semiconductor layer 11 , and the second electrode 16 is configured to provide an external current to the second semiconductor layer 13 .

[0059] Optionally, the current diffusion layer 14 is a transparent conductive material.

[0060] Optionally, the light emitting diode 100 may be a vertical structured diode chip (eg Figure 1 As shown), it can also be a flip-chip diode chip (such as Figure 2 shown).

[0061] exist Figure 1 In the embodiment, the first electrode 15 is disposed on a side of the first semiconductor layer 11 away from the active layer 12 , and the second electrode 16 is disposed on a side of the second semiconductor layer 13 away from the active layer 12 .

[0062] exist Figure 2 In the embodiment, the first semiconductor layer 11 protrudes from the active layer 12 and the second semiconductor layer 13, and the first electrode 15 is arranged on the protruding portion of the first semiconductor layer 11 and on the same side of the active layer 12 as the first semiconductor layer 11. The second electrode 16 is arranged on the side of the second semiconductor layer 13 away from the active layer 12.

[0063] The following description takes the light emitting diode 100 as a diode chip with a vertical structure as an example, but the invention is not limited thereto. For example, the light emitting diode 100 may also be a diode chip with a flip-chip structure.

[0064] Optionally, in some embodiments, one of the first semiconductor layer 11 and the second semiconductor layer 13 is an N-type semiconductor, and the other is a P-type semiconductor. The active layer 12 can be made of a heterostructure or a quantum well structure. This application is described by taking the first semiconductor layer 11 as an N-type and the second semiconductor layer as a P-type as an example.

[0065] In some embodiments of the present application, the current diffusion layer 14 is disposed on the entire surface and continuously covers the middle region 13a and the edge region 13b of the second semiconductor layer 13. The current diffusion layer 14 includes a first portion 141 and a second portion 142 connected to each other. The first portion 141 is disposed correspondingly in the middle region 13a of the second semiconductor layer 13, and the second portion 142 is disposed correspondingly in the edge region 13b of the second semiconductor layer 13.

[0066] The thickness of the second portion 142 is greater than the thickness of the first portion 141 .

[0067] It can be understood that the current diffusion layer 14 is disposed on the entire surface and continuously covers the middle area 13a and the edge area 13b of the second semiconductor layer 13. The current diffusion layer 14 may cover the entire second semiconductor layer 13, or the current diffusion layer 14 may fully cover the middle area 13a of the second semiconductor layer 13 and partially cover the edge area 13b. Among them, the current diffusion layer 14 fully covers the second semiconductor layer 13 to maximize the uniformity of light emission.

[0068] Secondly, the second portion 142 located in the edge region 13b is thicker, which can reduce the impedance of the second portion 142 to improve conductivity, thereby increasing the current density in this region. In addition, the second portion 142 is thicker, which can improve defects and unevenness at the edge of the epitaxial layer to improve light uniformity.

[0069] In some embodiments of the present application, the thickness of the second portion 142 increases gradually from the middle region 13 a to the edge region 13 b .

[0070] It is understandable that the more peripheral the epitaxial portion is, the more defects and unevenness there are, resulting in a worse effect of current uniform diffusion. Therefore, the thickness of the second portion 142 increases gradually. While improving the defects and unevenness of the epitaxial portion, the more peripheral areas can receive more current, thereby improving the light emission uniformity of the light-emitting diode 100.

[0071] Optionally, in some embodiments of the present application, in the light emitting diode 100 in a top view, the pattern of the current diffusion layer 14 is a centrally symmetrical pattern about the center of the second semiconductor layer 13 .

[0072] Such a configuration can improve the diffusion uniformity of the current, thereby improving the light emission uniformity of the light emitting diode 100 .

[0073] Figure 3 FIG. 1 is another cross-sectional schematic diagram of a light emitting diode 100 according to one or more embodiments disclosed in the present application. Figure 4 What is shown is a schematic plan view of the light emitting diode 100 according to the embodiment of the present application from a top view.

[0074] exist Figure 3 and Figure 4 In the present invention, parts different from those of the above-described embodiment will be described to avoid redundant explanation.

[0075] Please refer to Figure 3 and Figure 4In some embodiments of the present application, the current diffusion layer 14 includes a plurality of conductive portions 14a, and two adjacent conductive portions 14a are spaced apart from each other. Some of the conductive portions 14a are disposed in the middle region 13a of the second semiconductor layer 13, and another portion of the conductive portions 14a are disposed in the edge region 13b of the second semiconductor layer 13.

[0076] In the light-emitting diode 100 viewed from a top view, the ratio of the total area of ​​all conductive parts 14a located in the middle area 13a to the total area of ​​the middle area 13a is a first ratio, and the ratio of the total area of ​​all conductive parts 14a located in the edge area 13b to the total area of ​​the edge area 13b is a second ratio, and the first ratio is smaller than the second ratio.

[0077] It is understandable that, compared with the middle area 13a, a larger conductive portion 14a is provided in the edge area 13b to introduce more current into the edge area 13b, thereby increasing the current density of the edge area 13b, thereby achieving improved uniformity of light emission of the LED 100.

[0078] In some embodiments of the present application, in the light-emitting diode 100 viewed from a top perspective, a plurality of conductive portions 14a are arranged at intervals from the center z1 of the second semiconductor layer 13 toward the surrounding edges, and in any two adjacent conductive portions 14a, one conductive portion 14a is arranged on the outer periphery of the other conductive portion 14a.

[0079] The area of ​​the conductive portion 14 a increases gradually from the center z1 of the second semiconductor layer 13 toward the peripheral edges.

[0080] It can be understood that a conductive portion 14a is set in the central area of ​​the middle area 13a, and the other conductive portions 14a are arranged outward in sequence in a circle-by-circle manner, so that the current takes the central area as the base point and diffuses preferentially around the central area, thereby improving the uniformity of current diffusion and further improving the light emission uniformity of the light-emitting diode 100.

[0081] Secondly, the more defects and unevenness there are in the outermost part of the epitaxial portion, resulting in a worse uniform current diffusion effect. Therefore, the area of ​​the conductive portion 14a increases gradually from the center of the second semiconductor layer 13 to the surrounding edges, so that the conductive area of ​​the outermost region is larger, so that the outermost region can receive more current, thereby improving the uneven diffusion of the epitaxial portion and increasing the current density in the outermost region, thereby improving the light emission uniformity of the light-emitting diode 100.

[0082] In some embodiments of the present application, in the current diffusion layer 14 , any two adjacent conductive parts 14 a are disconnected and insulated from each other.

[0083] The light emitting diode 100 further includes an insulating layer 17. The first electrode 15 is connected to the first semiconductor layer 11. The insulating layer 17 is disposed in the same layer as the conductive portion 14a and disposed on the outer periphery of the conductive portion 14a. The second electrode 16 covers the insulating layer 17 and the conductive portion 14a, and the second electrode 16 simultaneously connects all the conductive portions 14a.

[0084] The second electrode 16 is used to connect all the conductive parts 14 a at the same time, so that the current can be directly transmitted to all the conductive parts 14 a , thereby improving the synchronization of the current transmission and further improving the light emission uniformity of the light emitting diode 100 .

[0085] Optionally, the second electrode 16 is disposed in the edge region 13b and extends a short distance toward the middle region 13a, for example, the second electrode 16 overlaps the innermost conductive portion 14a, that is, the second electrode 16 is disposed on one side of the middle region 13a toward the edge region 13b.

[0086] It should be understood that the more peripheral the conductive portion 14a is, the longer the current transmission path is. Therefore, the second electrode 16 is overlapped on the side of the edge region 13b to improve the synchronization of the overall current transmission and thus improve the uniformity of light emission.

[0087] In some embodiments of the present application, each conductive portion 14a includes a plurality of spaced-apart sub-conductive portions 141a and sub-connecting portions 141b, any two adjacent sub-conductive portions 141a are connected by the sub-connecting portions 141b, and a width k1 of the sub-connecting portions 141b is smaller than a width k2 of the sub-conductive portion 141a.

[0088] In the light emitting diode 100 viewed from a top view, in each conductive portion 14a, the ratio of the total area of ​​all sub-conductive portions 141a to the total area of ​​the conductive portion 14a is a third ratio, and the third ratio increases from the center z1 of the second semiconductor layer 13 toward the surrounding edges.

[0089] It can be understood that the larger the proportion of the total area of ​​the sub-conductive portion 141a, the larger the total area of ​​the sub-conductive portion 141a in the conductive portion 14a; therefore, based on the fact that the total area of ​​the sub-conductive portion 141a in the more peripheral unit area is larger, the area of ​​the conductive portion 14a set in the more peripheral unit area is larger.

[0090] Secondly, the conductive portion 14a adopts the method of sub-conductive portion 141a and sub-connecting portion 141b, which can more accurately control the area of ​​the conductive portion 14a in the edge area 13b and the middle area 13a, thereby achieving the effect of accurately controlling the uniformity of light emission. Secondly, based on the small width k1 of the sub-connecting portion 141b, a large amount of blank area can be saved to transmit light, thereby improving the light extraction efficiency.

[0091] In some embodiments of the present application, the number of sub-conductive portions 141 a of the conductive portion 14 a increases gradually from the center z1 of the second semiconductor layer 13 toward the peripheral edges.

[0092] It can be understood that the area of ​​the conductive portion 14 a is adjusted by adjusting the number of sub-conductive portions 141 a , and the greater the number of sub-conductive portions 141 a , the larger the area of ​​the conductive portion 14 a .

[0093] In some embodiments of the present application, the innermost conductive portion 14a among the plurality of conductive portions 14a is a central conductive portion 14aa, and a sub-conductive portion 141a located at a central position in the central conductive portion 14aa overlaps with the center of the second semiconductor layer 13 .

[0094] It can be understood that the sub-conductive portion 141a disposed at the center position of the central conductive portion 14aa overlaps with the center z1 of the second semiconductor layer 13, which can improve the uniformity of current diffusion.

[0095] Optionally, the second electrode 16 overlaps the outermost sub-conductive portion 141a in the central conductive portion 14aa. It should be understood that the more outer the conductive portion 14a is, the longer the current transmission path is. Therefore, the second electrode 16 overlaps the outermost sub-conductive portion 141a in the central conductive portion 14aa, which can improve the synchronization of the overall current transmission and thereby improve the uniformity of light emission.

[0096] Optionally, the shape of the sub-conductive portion 141a may be a rectangle, a square (eg Figure 4 ), hexagons, etc., or circles (such as Figure 5 As shown), elliptical or irregular shapes.

[0097] Optionally, in some embodiments of the present application, in the light emitting diode 100 in a top view, the pattern of the current diffusion layer 14 is a centrally symmetrical pattern about the center z1 of the second semiconductor layer 13 .

[0098] It is understandable that the current diffusion layer 14 as a whole is a centrally symmetrical pattern, that is, the pattern formed by all the conductive parts 14 a is a centrally symmetrical pattern. Such a configuration can improve the current diffusion uniformity, thereby improving the light emission uniformity of the light emitting diode 100 .

[0099] Figure 6 FIG. 1 is another schematic cross-sectional view of the light emitting diode 100 according to the embodiment of the present application. Figure 6 The corresponding embodiments and Figure 3 The difference between the corresponding embodiments is that the conductive portion 14a has different thicknesses.

[0100] Please refer to Figure 6In some embodiments of the present application, the thickness of the conductive portion 14 a increases gradually from the center z1 of the second semiconductor layer 13 toward the surrounding edges.

[0101] It can be understood that the thickness of the conductive part 14a increases gradually, so that the more peripheral the conductive part 14a has a lower impedance and a higher conductivity. Such a setting can improve the defects and unevenness of the extension part while allowing the more peripheral areas to receive more current, thereby improving the light emission uniformity of the light-emitting diode 100.

[0102] Figure 7 FIG. 1 is a plan view schematically showing another top view of the light emitting diode 100 according to the embodiment of the present application.

[0103] exist Figure 7 In the present invention, parts different from those of the above-described embodiment will be described to avoid redundant explanation.

[0104] Please refer to Figure 7 In some embodiments of the present application, the distance h between two adjacent conductive portions 14 a decreases from the center z1 of the second semiconductor layer 13 toward the edges thereof.

[0105] It can be understood that the shorter the spacing h is, the higher the density of the conductive part 14a is, and the larger the area of ​​the conductive part 14a is per unit area in the outer region, so that more current can be connected, thereby improving the uniformity of light emission.

[0106] In some embodiments of the present application, in the light emitting diode 100 viewed from a top view, all the conductive portions 14 a are ring-shaped structures, and the center z1 of the second semiconductor layer 13 is located in the inner circle region of all the conductive portions 14 a.

[0107] The center z1 of the second semiconductor layer 13 is located in the inner circle of all the conductive parts 14a, so that the current takes the central area as the base point and diffuses preferentially around the central area, thereby improving the uniformity of current diffusion and further improving the light emission uniformity of the light emitting diode 100.

[0108] In some embodiments of the present application, in the light emitting diode 100 viewed from a top view, all the conductive portions 14 a are ring-shaped structures, and the width g of the conductive portion 14 a increases gradually from the center z1 of the second semiconductor layer 13 toward the edges.

[0109] It can be understood that, since the conductive portion 14a is ring-shaped, the width of the conductive portion 14a is the effective width g of the ring. In addition, the larger the width g of the conductive portion 14a is, the larger the area of ​​the conductive portion 14a is set in the outer region, so that more current can be connected, thereby improving the effect of light uniformity.

[0110] Secondly, it should be noted that the pattern of the conductive portion 14a can be a ring structure (such as Figure 7 In some embodiments, the pattern of the conductive portion 14a may also be a ring structure that is not regularly extended based on the outer contour direction of the second semiconductor layer 13 (eg Figure 8 shown).

[0111] exist Figure 8 In the embodiment, the pattern of the second semiconductor layer 13 is a rectangle, the outermost conductive portion 14a is in an irregular ring shape, and the other conductive portions 14a are in an elliptical ring shape. Since the extension direction of the ring of the other conductive portions 14a is different from the outer contour direction of the second semiconductor layer 13, it is impossible to set a regular elliptical ring in the four corners of the edge region 13b, so the outermost conductive portion 14a only needs to cover the entire edge region 13b at a certain spacing h.

[0112] Of course, in some embodiments, the shape of the non-outermost conductive portion 14 a may also be a non-elliptical ring.

[0113] exist Figure 8 In the embodiment, the width g of the conductive portion 14a with similar shapes increases from the center z1 of the second semiconductor layer 13 to the peripheral edges. It should be understood that similarity refers to the geometric similarity of shapes, such as two ellipses of different sizes.

[0114] like Fig. 9 As shown, Fig. 9 FIG. 1 is a plan view schematically showing another top view of the light emitting diode 100 according to the embodiment of the present application.

[0115] The difference compared with the above embodiment is that: Fig. 9 The shape of the central conductive portion 14aa of the corresponding embodiment is non-annular; in the direction from the center z1 to the surrounding edges, the spacing h between the conductive portions 14a can be non-decreasing, but is not limited to this, for example, it can also be decreasing.

[0116] In some embodiments of the present application, the plurality of conductive portions 14a include a central conductive portion 14aa and at least two peripheral conductive portions 14ab, wherein the peripheral conductive portion 14ab is a ring-shaped structure, and the peripheral conductive portion 14ab surrounds the outer circumference of the central conductive portion 14aa. In the light emitting diode 100 viewed from a top view, the central conductive portion 14aa covers the center z1 of the second semiconductor layer 13.

[0117] The width of the central conductive portion 14 aa is smaller than the width g of all the peripheral conductive portions 14 ab , and the width g of the peripheral conductive portions 14 ab increases gradually from the center z1 of the second semiconductor layer 13 toward the edges.

[0118] It can be understood that, the larger the width g of the peripheral conductive portion 14ab is, the larger the area of ​​the conductive portion 14a is set in the peripheral region to connect more current, thereby improving the effect of light emission uniformity.

[0119] Secondly, the central conductive portion 14aa covers the center z1 of the second semiconductor layer 13, which can improve the synchronization of current transmission and the uniformity of diffusion.

[0120] In addition, it should be noted that the shape of the central conductive portion 14aa corresponds to the shape of the second semiconductor layer 13. For example, if the second semiconductor layer 13 is rectangular, the shape of the central conductive portion 14aa is rectangular; for example, if the second semiconductor layer 13 is circular, the shape of the central conductive portion 14aa is circular. That is, the shape of the central conductive portion 14aa is geometrically similar to the shape of the second semiconductor layer 13.

[0121] Fig.10 Shown is a schematic structural diagram of a display panel 1000 according to an embodiment of the present application.

[0122] Please refer to Fig.10 The embodiment of the present application further provides a display panel 1000 , which includes a driving substrate 200 and a light emitting diode 100 as described in any one of the above embodiments, and the light emitting diode 100 is arranged on the driving substrate 200 .

[0123] It should be understood that the driving substrate 200 is configured to drive the light emitting diode 100 to emit light. Secondly, the structure of the light emitting diode 100 of the display panel 1000 of the present embodiment is similar or the same as the structure of the light emitting diode 100 of any of the above embodiments, so it will not be repeated here. For details, please refer to Figures 1 to 9 Related explanation of .

[0124] The display panel 1000 of the embodiment of the present application is provided with a current diffusion layer 14 on the second semiconductor layer 13, so that the current can be quickly diffused to the entire surface of the second semiconductor layer 13, and the current density of the current diffusion layer 14 in the edge region 13b of the second semiconductor layer 13 is greater than the current density of the current diffusion layer 14 in the middle region 13a of the second semiconductor layer 13. That is to say, when the power is turned on, the current density of the current diffusion layer 14 in the edge region 13b is greater than the current density of the current diffusion layer 14 in the middle region 13a, and the current amount in the edge region 13b is increased to compensate for the defects existing at the edge of the epitaxial layer (the stack of the first semiconductor layer, the active layer and the second semiconductor layer) etched and formed under the semiconductor process, thereby improving the uniformity of light emission.

[0125] The above is a detailed introduction to a light-emitting diode and a display panel provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A light emitting diode, characterized in that: include: a first semiconductor layer; An active layer, disposed on the first semiconductor layer; A second semiconductor layer is arranged on a side of the active layer away from the first semiconductor layer, the second semiconductor layer comprising a middle region and an edge region surrounding the middle region; as well as A current diffusion layer is arranged on a side of the second semiconductor layer away from the active layer; the current diffusion layer is configured to receive current and transmit the current to the second semiconductor layer; The current diffusion layer is arranged in the middle region and the edge region, and the current density of the current diffusion layer in the edge region is greater than the current density of the current diffusion layer in the middle region.

2. The light emitting diode according to claim 1, characterized in that: The current diffusion layer is disposed on the entire surface and continuously covers the middle region and the edge region of the second semiconductor layer, and the current diffusion layer includes a first portion and a second portion connected to each other, the first portion is disposed correspondingly in the middle region of the second semiconductor layer, and the second portion is disposed correspondingly in the edge region of the second semiconductor layer; The thickness of the second portion is greater than the thickness of the first portion.

3. The light emitting diode according to claim 2, characterized in that: The thickness of the second portion increases gradually from the middle area to the edge area.

4. The light emitting diode according to claim 1, characterized in that: The current diffusion layer comprises a plurality of conductive parts, two adjacent conductive parts are arranged with a distance therebetween, some of the conductive parts are arranged in the middle area of ​​the second semiconductor layer, and another part of the conductive parts are arranged in the edge area of ​​the second semiconductor layer; In the light-emitting diode viewed from a top view, the ratio of the total area of ​​all the conductive parts located in the middle area to the total area of ​​the middle area is a first ratio, and the ratio of the total area of ​​all the conductive parts located in the edge area to the total area of ​​the edge area is a second ratio, and the first ratio is smaller than the second ratio.

5. The light emitting diode according to claim 4, characterized in that: In the light-emitting diode in a top view, the plurality of conductive portions are arranged at intervals from the center of the second semiconductor layer to the peripheral edges thereof, and in any two adjacent conductive portions, one conductive portion is arranged around the outer periphery of the other conductive portion; The area of ​​the conductive portion increases gradually from the center of the second semiconductor layer to the peripheral edges.

6. The light emitting diode according to claim 5, characterized in that: Each of the conductive parts includes a plurality of sub-conductive parts and sub-connecting parts arranged at intervals, any two adjacent sub-conductive parts are connected by the sub-connecting parts, and the width of the sub-connecting parts is smaller than the width of the sub-conductive parts; In the light-emitting diode viewed from a top view, in each of the conductive portions, the ratio of the total area of ​​all the sub-conductive portions to the total area of ​​the conductive portion is a third ratio, and the third ratio increases from the center of the second semiconductor layer toward the surrounding edges.

7. The light emitting diode according to claim 6, characterized in that: The number of sub-conductive parts of the conductive part increases gradually from the center to the peripheral edges of the second semiconductor layer.

8. The light emitting diode according to claim 7, characterized in that: The innermost conductive portion among the plurality of conductive portions is a central conductive portion, and a sub-conductive portion located at a central position in the central conductive portion overlaps with a center of the second semiconductor layer.

9. The light emitting diode according to claim 5, characterized in that: In a direction from the center of the second semiconductor layer to the peripheral edges, the distance between two adjacent conductive parts decreases gradually.

10. The light emitting diode according to claim 9, characterized in that: In the light emitting diode viewed from a top view, all the conductive parts are ring-shaped structures, and the center of the second semiconductor layer is located in the inner circle area of ​​all the conductive parts.

11. The light emitting diode according to claim 5, characterized in that: In the light emitting diode viewed from a top view, all the conductive portions are ring-shaped structures, and the widths of the conductive portions gradually increase from the center of the second semiconductor layer toward the edges thereof.

12. The light emitting diode according to claim 5, characterized in that: The plurality of conductive portions include a central conductive portion and at least two peripheral conductive portions, wherein the peripheral conductive portion is a ring-shaped structure, and the peripheral conductive portion surrounds the outer circumference of the central conductive portion, and in the light-emitting diode viewed from a top view, the central conductive portion covers the center of the second semiconductor layer; The width of the central conductive portion is smaller than the width of all the peripheral conductive portions, and the width of the peripheral conductive portions increases gradually from the center to the peripheral edges of the second semiconductor layer.

13. The light emitting diode according to any one of claims 4 to 12, characterized in that: The thickness of the conductive portion increases gradually from the center of the second semiconductor layer to the peripheral edges.

14. The light emitting diode according to any one of claims 4 to 12, characterized in that: In the current diffusion layer, any two adjacent conductive parts are disconnected and insulated; The light-emitting diode also includes a first electrode, a second electrode and an insulating layer, the first electrode is connected to the first semiconductor layer, the insulating layer is arranged in the same layer as the conductive part and is arranged on the outer peripheral side of the conductive part, the second electrode covers the insulating layer and the conductive part, and the second electrode simultaneously connects all the conductive parts.

15. The light emitting diode according to any one of claims 2 to 3, characterized in that: The light emitting diode further includes a first electrode and a second electrode, wherein the first electrode is connected to the first semiconductor layer, and the second electrode is connected to a side of the current diffusion layer away from the active layer.

16. The light emitting diode according to any one of claims 1 to 12, characterized in that: In the light emitting diode in a top view, a pattern of the current diffusion layer is a centrally symmetrical pattern about a center of the second semiconductor layer.

17. A display panel, characterized in that: It comprises a driving substrate and a light emitting diode as described in any one of claims 1 to 16, wherein the light emitting diode is arranged on the driving substrate.

Images