Light emitting device and display apparatus

Abstract

The invention discloses a light-emitting device and a display device, the light-emitting device comprises a substrate, a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, and the contact surface of the first semiconductor layer and the light-emitting layer is a first surface; the contact surface of the second semiconductor layer and the light-emitting layer is a second surface, and the surface, away from the light-emitting layer, of the second semiconductor layer is a third surface; the part of at least one of the first surface, the second surface and the third surface located in the main light-emitting area is a first surface, and the part of the first surface, the second surface and the third surface located in the secondary light-emitting area is a second surface; in a plane view of the light-emitting device, a first contact resistance formed by contacting the first surface in unit area with the surface of the adjacent film layer is smaller than a second contact resistance formed by contacting the second surface in unit area with the surface of the adjacent film layer. The invention aims to weaken side wall luminescence of the light-emitting device and improve the front luminescence efficiency of the light-emitting device.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device and a display apparatus. Background Art

[0002] In the production process of Micro Light Emitting Diode (Micro LED), dry etching will introduce many sidewall defects, which become channels for surface recombination and non-radiative recombination, resulting in reduced luminous efficiency of the Micro Light Emitting Diode and affected luminous uniformity.

[0003] At the same time, as the size of the micro LED decreases, the ratio of the side wall area of ​​the micro LED to the overall surface area of ​​the micro LED increases, and the side wall light emission increases, resulting in a decrease in the front light emission efficiency of the micro LED.

[0004] Therefore, it is necessary to propose a new technical solution to solve the above technical problems. Summary of the invention

[0005] The purpose of the present application is to provide a light-emitting device and a display device, aiming to weaken the side wall light emission of the light-emitting device and improve the front light emission efficiency of the light-emitting device.

[0006] To solve the above problems, the technical solution of this application is as follows:

[0007] In a first aspect, the present application proposes a light-emitting device, comprising a main light-emitting area and a secondary light-emitting area located at least on one side of the main light-emitting area, the light-emitting device comprising:

[0008] substrate;

[0009] A first semiconductor layer, disposed on one side of the substrate;

[0010] A light-emitting layer is provided on a side of the first semiconductor layer away from the substrate, and a contact surface between the first semiconductor layer and the light-emitting layer is a first surface;

[0011] A second semiconductor layer is provided on a side of the light emitting layer away from the first semiconductor layer, wherein a contact surface between the second semiconductor layer and the light emitting layer is a second surface, and a side of the second semiconductor layer away from the light emitting layer is a third surface;

[0012] A first electrode connected to the first semiconductor layer; and

[0013] a second electrode connected to the second semiconductor layer;

[0014] Wherein, the portion of at least one of the first surface, the second surface and the third surface located in the main light-emitting area is a first surface, and the portions of the first surface, the second surface and the third surface located in the secondary light-emitting area are second surfaces;

[0015] In a plan view of the light emitting device, a first contact resistance per unit area formed by the first surface contacting an adjacent film layer surface is smaller than a second contact resistance per unit area formed by the second surface contacting an adjacent film layer surface.

[0016] In one embodiment of the present application, the first surface is a concave-convex surface, and the second surface is a flat surface.

[0017] In one embodiment of the present application, the first semiconductor layer includes:

[0018] A first semiconductor portion, wherein the first semiconductor portion is located between the substrate and the light-emitting layer, and a portion of a surface of the first semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is the flat surface; and

[0019] A plurality of first protrusions are arranged on a side of the first semiconductor part close to the light-emitting layer, the plurality of first protrusions and the first semiconductor part are an integral structure, the plurality of first protrusions are located in the main light-emitting area, the light-emitting layer covers the plurality of first protrusions and a portion of the first semiconductor part, and a side of the first semiconductor part close to the light-emitting layer, a portion of which is located in the main light-emitting area, forms the concave-convex surface with the plurality of first protrusions.

[0020] In one embodiment of the present application, the second semiconductor layer includes:

[0021] A second semiconductor portion, wherein the second semiconductor portion is located between the light-emitting layer and the second electrode, and a portion of a surface of the second semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is the flat surface; and

[0022] A plurality of second protrusions are arranged on a side of the second semiconductor portion close to the light-emitting layer, the plurality of second protrusions and the second semiconductor portion are an integral structure, the plurality of second protrusions are located in the main light-emitting area, the light-emitting layer covers the plurality of second protrusions and the second semiconductor portion, and a portion of a side of the second semiconductor portion close to the light-emitting layer located in the main light-emitting area forms the concave-convex surface with the plurality of second protrusions.

[0023] In one embodiment of the present application, the second semiconductor layer includes:

[0024] a second semiconductor portion, the second semiconductor portion being located on a side of the light emitting layer away from the first semiconductor layer, and a portion of a side of the second semiconductor portion away from the light emitting layer and located in the secondary light emitting region being the flat surface; and

[0025] A plurality of third protrusions are arranged on a side of the second semiconductor portion away from the light-emitting layer, the plurality of third protrusions and the second semiconductor portion are an integral structure, the plurality of third protrusions are located in the main light-emitting area, and a portion of a side of the second semiconductor portion away from the light-emitting layer located in the main light-emitting area forms the concave-convex surface with the plurality of third protrusions.

[0026] In one embodiment of the present application, a portion of a surface of the second semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is a flat surface;

[0027] The second semiconductor layer also includes a plurality of second protrusions, which are arranged on a side of the second semiconductor portion close to the light-emitting layer. The plurality of second protrusions and the second semiconductor portion are an integral structure. The plurality of second protrusions are located in the main light-emitting area. The light-emitting layer covers the plurality of second protrusions and the second semiconductor portion. A portion of a side of the second semiconductor portion close to the light-emitting layer located in the main light-emitting area forms the concave-convex surface with the plurality of second protrusions.

[0028] In one embodiment of the present application, the first semiconductor layer includes:

[0029] A first semiconductor portion, wherein the first semiconductor portion is located between the substrate and the light-emitting layer, and a portion of a surface of the first semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is a flat surface; and

[0030] A plurality of first protrusions are arranged on a side of the first semiconductor part close to the light-emitting layer, the plurality of first protrusions and the first semiconductor part are an integral structure, the plurality of first protrusions are located in the main light-emitting area, the light-emitting layer covers the plurality of first protrusions and a portion of the first semiconductor part, and a side of the first semiconductor part close to the light-emitting layer, a portion of which is located in the main light-emitting area, forms the concave-convex surface with the plurality of first protrusions.

[0031] In one embodiment of the present application, a plurality of the first protrusions are spaced apart and evenly distributed on a side of the first semiconductor portion close to the light-emitting layer, a plurality of the second protrusions are spaced apart and evenly distributed on a side of the second semiconductor portion close to the light-emitting layer, and a plurality of the third protrusions are spaced apart and evenly distributed on a side of the second semiconductor portion away from the light-emitting layer.

[0032] In one embodiment of the present application, in a plan view of the light emitting device, the secondary light emitting area is arranged around the primary light emitting area;

[0033] The number of the first protrusions per unit area decreases from the center of the main light-emitting area to the edge of the main light-emitting area;

[0034] The number of the second protrusions per unit area decreases from the center of the main light-emitting area to the edge of the main light-emitting area;

[0035] The number of the third protrusions per unit area decreases from the center of the main light-emitting area to the edge of the main light-emitting area.

[0036] In one embodiment of the present application, the shape of the first protrusion is one or a combination of cone, cylinder, table, sphere, ellipsoid, hemisphere;

[0037] The shape of the second protrusion is one or a combination of cone, cylinder, table, sphere, ellipsoid, hemisphere;

[0038] The shape of the third protrusion is one or a combination of cone, cylinder, table, sphere, ellipsoid, hemisphere.

[0039] In one embodiment of the present application, the light emitting device further includes:

[0040] a current blocking layer, disposed on a side of the second semiconductor layer away from the light-emitting layer;

[0041] a transparent conductive layer, disposed on a side of the second semiconductor layer away from the light-emitting layer and covering the current blocking layer, wherein the transparent conductive layer connects the second semiconductor layer and the second electrode; and

[0042] a reflective layer covering the first semiconductor layer, the light-emitting layer, the second semiconductor layer and the transparent conductive layer; the reflective layer is provided with a first through hole and a second through hole; the first through hole exposes a portion of the transparent conductive layer; the second through hole exposes a portion of the first semiconductor layer; the first electrode is connected to the first semiconductor layer through the first through hole; and the second electrode is connected to the transparent conductive layer through the second through hole.

[0043] In a second aspect, the present application proposes a display device, comprising a light-emitting device, wherein the light-emitting device comprises a substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode and a second electrode, wherein the first semiconductor layer is arranged on one side of the substrate; the light-emitting layer is arranged on a side of the first semiconductor layer away from the substrate, and the contact surface between the first semiconductor layer and the light-emitting layer is a first surface; the second semiconductor layer is arranged on a side of the light-emitting layer away from the first semiconductor layer, and the contact surface between the second semiconductor layer and the light-emitting layer is a second surface, and a side of the second semiconductor layer away from the light-emitting layer is a third surface; the first electrode is connected to the first semiconductor layer; the second electrode is connected to the second semiconductor layer; wherein the portion of at least one of the first surface, the second surface and the third surface located in the main light-emitting area is a concave-convex surface, and the portions of the first surface, the second surface and the third surface located in the secondary light-emitting area are flat surfaces; in a plan view of the light-emitting device, a first contact resistance formed by the contact between the concave-convex surface per unit area and the surface of an adjacent film layer is less than a second contact resistance formed by the contact between the flat surface per unit area and the surface of an adjacent film layer.

[0044] In the present application, the portion of at least one of the first surface, the second surface and the third surface corresponding to the main light-emitting area is the first surface, and the portion of the first surface, the second surface and the third surface corresponding to the secondary light-emitting area is the second surface. In the plan view of the light-emitting device, the first contact resistance formed by the first surface per unit area in contact with the adjacent film layer surface is smaller than the second contact resistance formed by the second surface per unit area in contact with the adjacent film layer surface. When carriers pass through the contact interface having the first surface and the second surface, the carriers tend to pass through the first surface having a smaller contact resistance. In the light-emitting device, the first surface is arranged corresponding to the main light-emitting area, and the second surface is arranged corresponding to the secondary light-emitting area, so that the current channel formed by the migration of carriers is concentrated in the main light-emitting area, thereby weakening the side wall light emission of the light-emitting device corresponding to the secondary light-emitting area, and improving the front light-emitting efficiency corresponding to the main light-emitting area. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 is a schematic diagram of a light emitting device of the present application;

[0046] Figure 2 is a plan view of the light emitting device of the present application;

[0047] Figure 3 is another plan view of the light emitting device of the present application;

[0048] Figure 4 is another plan view of the light emitting device of the present application;

[0049] Figure 5 is a schematic diagram of a light emitting device according to a first embodiment of the present application;

[0050] Figure 6 is a first schematic diagram of the first semiconductor layer of the first embodiment of the present application;

[0051] Figure 7 is a second schematic diagram of the first semiconductor layer of the first embodiment of the present application;

[0052] Figure 8 is a third schematic diagram of the first semiconductor layer of the first embodiment of the present application;

[0053] Fig. 9 is a fourth schematic diagram of the first semiconductor layer of the first embodiment of the present application;

[0054] Fig.10 is a fifth schematic diagram of the first semiconductor layer of the first embodiment of the present application;

[0055] Fig.11 is a schematic diagram of a light emitting device according to a second embodiment of the present application;

[0056] Fig.12 is a first schematic diagram of the second semiconductor layer of the second embodiment of the present application;

[0057] Fig.13 is a second schematic diagram of the second semiconductor layer of the second embodiment of the present application;

[0058] Fig.14 is a schematic diagram of a light emitting device according to a third embodiment of the present application;

[0059] Fig.15 is a first schematic diagram of the second semiconductor layer of the third embodiment of the present application;

[0060] Fig.16 is a second schematic diagram of the second semiconductor layer of the third embodiment of the present application;

[0061] Fig.17 is a schematic diagram of a light emitting device according to a fourth embodiment of the present application;

[0062] Fig.18 is a schematic diagram of a light emitting device according to a fifth embodiment of the present application. DETAILED DESCRIPTION

[0063] The meanings of the terms used in this specification and claims correspond to the meanings commonly understood by those of ordinary skill in the art to which this application belongs. The terms used in this specification and claims are only for the purpose of facilitating the description and understanding of this application, and are not intended to limit this application to the narrow interpretation of the specific terms used in the specification and claims.

[0064] The present application proposes a display device, which may be a mobile phone, a tablet computer, an e-reader, an electronic display screen, a laptop computer, an augmented reality (AR) or virtual reality (VR) device, a media player, a wearable device, a digital camera, a car navigation system, etc. The display device includes one of a display panel and a backlight module.

[0065] Optionally, the display device includes a backlight module. The display device also includes a liquid crystal panel, and the backlight module is used to provide a light source for the liquid crystal panel. The liquid crystal panel includes an array substrate, an opposing substrate, and a liquid crystal layer located between the array substrate and the opposing substrate. The liquid crystal panel realizes picture display by controlling the light transmittance of each pixel in the liquid crystal layer. Among them, the backlight module includes a light-emitting device 100. On the premise that the front light-emitting efficiency of the light-emitting device 100 is improved, the front light output of the liquid crystal panel can be increased, thereby improving the display effect; on the premise that the side wall light emission of the light-emitting device 100 is weakened, the power consumption of the backlight module can be reduced, thereby reducing the power consumption of the display device, and the service life of the light-emitting device 100 can also be extended.

[0066] Optionally, the display device includes a display panel, and the display panel may be a micro light emitting diode (Micro Light Emitting Diode, Micro LED) display panel, or a sub-millimeter light emitting diode (Mini Light Emitting Diode, Mini LED) display panel.

[0067] Optionally, the display panel is a micro light emitting diode display panel. Compared with the backlight module, the micro light emitting diode display panel is a direct display panel. The micro light emitting diode display panel does not have a backlight module and a liquid crystal layer, but uses the light emitting device 100 as a sub-pixel to directly emit light, which has a higher contrast ratio than the liquid crystal display panel. Among them, the micro light emitting diode display panel includes a display module, and the display module includes a light emitting device 100. On the premise that the front light emitting efficiency of the light emitting device 100 is improved, the brightness of the front light can be increased, thereby improving the contrast and display effect; on the premise that the side wall light emission of the light emitting device 100 is weakened, on the one hand, the side light leakage entering other film layers can be reduced to cause heat accumulation, thereby improving the heat dissipation efficiency of the display panel, and on the other hand, the side light leakage is reduced, which can reduce the power consumption of the light emitting device 100, extend the service life of the light emitting device 100, reduce the large viewing angle of the light emitting device 100, converge the light emitting angle, and improve the display effect.

[0068] The embodiments of the present application are described by taking a micro light emitting diode display panel as an example.

[0069] The present application proposes a light emitting device 100. The light emitting device 100 may be a micro light emitting diode, or a sub-millimeter light emitting diode. The embodiments of the present application are described by taking a micro light emitting diode as an example. The light emitting device 100 may be a red light emitting device 100, a blue light emitting device 100, a green light emitting device 100, or a white light emitting device 100. The embodiments of the present application do not limit the light color of the light emitting device 100.

[0070] See also Figure 1 The light emitting device 100 of the present application includes a main light emitting area MA and a sub-light emitting area SA located at at least one side of the main light emitting area MA.

[0071] The light emitting device 100 of the present application includes a substrate 10, a first semiconductor layer 20, a light emitting layer 30, a second semiconductor layer 40, a first electrode 51 and a second electrode 52. The first semiconductor layer 20 is disposed on one side of the substrate 10. The light emitting layer 30 is disposed on the side of the first semiconductor layer 20 away from the substrate 10. The contact surface between the first semiconductor layer 20 and the light emitting layer 30 is the first surface. The second semiconductor layer 40 is disposed on the side of the light emitting layer 30 away from the first semiconductor layer 20, the contact surface between the second semiconductor layer 40 and the light emitting layer 30 is the second surface, and the side of the second semiconductor layer 40 away from the light emitting layer 30 is the third surface. The first electrode 51 is connected to the first semiconductor layer 20. The second electrode 52 is connected to the second semiconductor layer 40. The portion of at least one of the first surface, the second surface and the third surface located in the main light emitting area MA is the first surface S. The portions of the first surface, the second surface and the third surface located in the secondary light emitting area SA are the second surface P. In the plan view of the light emitting device 100 , a first contact resistance per unit area formed by the first surface S contacting the adjacent film surface is smaller than a second contact resistance per unit area formed by the second surface P contacting the adjacent film surface.

[0072] In the present embodiment, the portion of at least one of the first surface, the second surface, and the third surface corresponding to the main light-emitting area MA is the first surface S, and the portions of the first surface, the second surface, and the third surface corresponding to the secondary light-emitting area SA are the second surface P. In the plan view of the light-emitting device 100, the first contact resistance formed by the first surface S per unit area in contact with the surface of the adjacent film layer is smaller than the second contact resistance formed by the second surface P per unit area in contact with the surface of the adjacent film layer. When carriers pass through the contact interface having the first surface S and the second surface P, the carriers tend to pass through the first surface S having a smaller contact resistance. In the light-emitting device 100, the first surface S is arranged corresponding to the main light-emitting area MA, and the second surface P is arranged corresponding to the secondary light-emitting area SA, so that the current channel formed by the migration of carriers is concentrated in the main light-emitting area MA, thereby weakening the sidewall light emission of the light-emitting device 100 corresponding to the secondary light-emitting area SA, and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0073] Optionally, the first surface S is a convex surface, and the second surface P is a plane.

[0074] When the first surface S is a convex surface, compared to a plane, a first contact area formed by the contact between the convex surface per unit area and the adjacent film layer surface is larger than a second contact area formed by the contact between the plane per unit area and the adjacent film layer surface. Since the contact area is inversely proportional to the contact resistance, in a plan view of the light-emitting device, a first contact resistance formed by the contact between the convex surface per unit area and the adjacent film layer surface is smaller than a second contact resistance formed by the contact between the plane per unit area and the adjacent film layer surface.

[0075] Optionally, the first surface S is a concave surface, and the second surface P is a plane.

[0076] When the first surface S is a concave surface, compared to a plane, a first contact area formed by the contact between the concave surface per unit area and the adjacent film layer surface is larger than a second contact area formed by the contact between the plane per unit area and the adjacent film layer surface. Since the contact area is inversely proportional to the contact resistance, in a plan view of the light-emitting device, a first contact resistance formed by the contact between the concave surface per unit area and the adjacent film layer surface is smaller than a second contact resistance formed by the contact between the plane per unit area and the adjacent film layer surface.

[0077] Optionally, the first surface S is a concave-convex surface, and the second surface P is a flat surface.

[0078] In this embodiment, the portion of at least one of the first surface, the second surface and the third surface corresponding to the main light-emitting area MA is set as a concave-convex surface S, and the portions of the first surface, the second surface and the third surface corresponding to the secondary light-emitting area SA are set as a flat surface P. In the plan view of the light-emitting device 100, the first contact area formed by the contact between the concave-convex surface S per unit area and the surface of the adjacent film layer is larger than the second contact area formed by the contact between the flat surface P per unit area and the surface of the adjacent film layer. Since the contact resistance between two adjacent film layers is inversely proportional to the contact area, the larger the contact area, the smaller the contact resistance. In the plan view of the light-emitting device 100, the first contact area is larger than the second contact area, so the first contact resistance formed by the contact between the concave-convex surface S per unit area and the surface of the adjacent film layer is smaller than the second contact resistance formed by the contact between the flat surface P per unit area and the surface of the adjacent film layer. When carriers pass through the contact interface having the concave-convex surface S and the flat surface P, the carriers tend to pass through the concave-convex surface S with a smaller contact resistance. In the light-emitting device 100, the concave-convex surface S is arranged corresponding to the main light-emitting area MA, and the flat surface P is arranged corresponding to the secondary light-emitting area SA, so that the current channel formed by the migration of carriers is concentrated in the main light-emitting area MA, thereby weakening the side wall light emission of the light-emitting device 100 corresponding to the secondary light-emitting area SA and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0079] In order to avoid redundancy, the subsequent embodiments of the present application are described by taking the first surface S as a concave-convex surface and the second surface P as a flat surface as an example.

[0080] Optionally, the first electrode 51 is disposed on a side of the first semiconductor layer 20 away from the substrate 10 . The second electrode 52 is disposed on a side of the second semiconductor layer 40 away from the light emitting layer 30 .

[0081] Optionally, the substrate 10 is a hard substrate 10, and the material of the substrate 10 includes at least one of sapphire and glass.

[0082] Optionally, the substrate 10 is a flexible substrate 10 , and the material of the substrate 10 includes polyimide.

[0083] Optionally, after the light emitting device 100 is bound to the substrate of the display panel, the substrate 10 may be peeled off by laser peeling.

[0084] Optionally, the material of the first semiconductor layer 20 is one of N-type gallium nitride (N-GaN) and P-type gallium nitride (P-GaN), and the second semiconductor layer 40 is the other of N-type gallium nitride and P-type gallium nitride. The subsequent embodiments of the present application are described by taking the material of the first semiconductor layer 20 as N-type gallium nitride and the material of the second semiconductor layer 40 as P-type gallium nitride as an example. In the subsequent embodiments, the first semiconductor layer 20 is used to transport electrons, and the second semiconductor layer 40 is used to transport holes.

[0085] Optionally, the light emitting layer 30 is a multi-quantum well layer.

[0086] Optionally, the second semiconductor layer 40 may be directly in contact with and electrically connected to the second electrode 52. At this time, when the portion of the third surface located in the main light emitting area MA is a concave-convex surface S, the concave-convex surface S may reduce the contact resistance formed between the second semiconductor layer 40 and the second electrode 52, thereby concentrating the current channel in the main light emitting area MA, thereby weakening the sidewall light emission of the light emitting device 100 corresponding to the secondary light emitting area SA, and improving the front light emitting efficiency corresponding to the main light emitting area MA.

[0087] Optionally, the light emitting device 100 further includes a transparent conductive layer 53. The transparent conductive layer 53 is disposed on a side of the second semiconductor layer 40 away from the light emitting layer 30 and between the second semiconductor layer 40 and the second electrode 52. The transparent conductive layer 53 connects the second semiconductor layer 40 and the second electrode 52. The transparent conductive layer 53 serves as a current spreading layer and electrically connects the second semiconductor layer 40 and the second electrode 52. The material of the transparent conductive layer 53 includes transparent indium tin oxide (ITO).

[0088] Optionally, the light emitting device 100 further includes a reflective layer 54. The reflective layer 54 covers the first semiconductor layer 20, the light emitting layer 30, the second semiconductor layer 40 and the transparent conductive layer 53. The reflective layer 54 is provided with a first through hole and a second through hole, the first through hole exposing a portion of the transparent conductive layer 53, the second through hole exposing a portion of the first semiconductor layer 20, the first electrode 51 is connected to the first semiconductor layer 20 through the first through hole, and the second electrode 52 is connected to the transparent conductive layer 53 through the second through hole.

[0089] Optionally, the reflective layer 54 is a distributed Bragg reflector (DBR) reflective layer 54. The DBR reflective layer 54 reflects the light originally propagating downward back to the top by reflecting the light emitted from the inside of the Micro LED, thereby improving the light emission efficiency, which is crucial to improving the brightness and efficiency of the Micro LED.

[0090] Optionally, the DBR reflective layer 54 is composed of multiple layers of alternating high-refractive index and low-refractive index materials. This periodic structure can achieve high reflectivity within a specific wavelength range, which is very beneficial for improving the luminous brightness of the LED.

[0091] Optionally, the light emitting device 100 further includes a current blocking layer 55. The current blocking layer 55 is located between the second semiconductor layer 40 and the transparent conductive layer 53. In a plan view of the light emitting device 100, the second electrode 52 overlaps with the current blocking layer 55. The current blocking layer 55 can alleviate the crowding phenomenon of the current near the second electrode 52, thereby improving the light extraction efficiency of the display panel.

[0092] Optional, see Figure 2 , the secondary light-emitting area SA is located on one side of the main light-emitting area MA. In this embodiment, the sidewall light emission of the secondary light-emitting area SA on one side of the main light-emitting area MA is weakened, thereby reducing the power consumption of the light-emitting device 100. Since the first contact resistance of the main light-emitting area MA is smaller than the second contact resistance of the secondary light-emitting area SA in the film layer provided with the concave-convex surface S, the current channel formed by the migration of carriers is concentrated in the main light-emitting area MA located on one side of the secondary light-emitting area SA, thereby improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0093] Optional, see Figure 3 , the secondary light-emitting area SA is located on both sides of the main light-emitting area MA. In this embodiment, the sidewall light emission of the secondary light-emitting areas SA on both sides of the main light-emitting area MA is weakened, further reducing the power consumption of the light-emitting device 100. Since the first contact resistance of the main light-emitting area MA is smaller than the second contact resistance of the secondary light-emitting area SA in the film layer provided with the concave-convex surface S, the current channel formed by the migration of carriers is concentrated in the main light-emitting area MA between the two secondary light-emitting areas SA, further improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0094] Optional, see Figure 4 , the secondary light-emitting area SA is arranged around the periphery of the main light-emitting area MA. In this embodiment, the sidewall light emission of the secondary light-emitting area SA arranged around the periphery of the main light-emitting area MA is weakened, further reducing the power consumption of the light-emitting device 100. Since the first contact resistance of the main light-emitting area MA is less than the second contact resistance of the secondary light-emitting area SA in the film layer provided with the concave-convex surface S, the current channel formed by the migration of carriers is concentrated in the main light-emitting area MA surrounded by the secondary light-emitting area SA, further improving the front light-emitting efficiency corresponding to the main light-emitting area MA. The subsequent embodiments of the present application are described by taking the secondary light-emitting area SA arranged around the periphery of the main light-emitting area MA as an example.

[0095] In the first embodiment of the present application:

[0096] Optional, see Figure 5 Among the first, second and third surfaces of the light-emitting device 100, only the portion of the first surface located in the main light-emitting area MA is set as the concave-convex surface S, and the portion of the second surface located in the main light-emitting area MA and the portion of the third surface located in the main light-emitting area MA are set as the flat surface P.

[0097] In this embodiment, the electrons generated by the first electrode 51 are transferred to the first semiconductor layer 20, and the first surface includes a concave-convex surface S corresponding to the main light-emitting area MA and a flat surface P corresponding to the sub-light-emitting area SA, and the flat surface P is located outside the concave-convex surface S. Since the first contact resistance formed by the concave-convex surface S of the first surface in contact with the adjacent surface of the light-emitting layer 30 is smaller than the second contact resistance formed by the flat surface P of the first surface in contact with the adjacent surface of the light-emitting layer 30, the current channel is concentrated in the main light-emitting area MA, the sidewall light emission of the sub-light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0098] Optionally, the first semiconductor layer 20 includes a first semiconductor portion 21 and a plurality of first protrusions 22. The first semiconductor portion 21 is located between the substrate 10 and the light-emitting layer 30, and a portion of the first semiconductor portion 21 located in the secondary light-emitting area SA on a side close to the light-emitting layer 30 is a flat surface P. A plurality of first protrusions 22 are provided on a side of the first semiconductor portion 21 close to the light-emitting layer 30, and the plurality of first protrusions 22 and the first semiconductor portion 21 are an integral structure. The plurality of first protrusions 22 are located in the main light-emitting area MA, and the light-emitting layer 30 covers a portion of the plurality of first protrusions 22 and the first semiconductor portion 21. A portion of the first semiconductor portion 21 located in the main light-emitting area MA on a side close to the light-emitting layer 30 forms a concave-convex surface S with the plurality of first protrusions 22.

[0099] In this embodiment, the concavo-convex surface S is formed by etching a surface of the first semiconductor layer 20 close to the light emitting layer 30. In the steps of the method for manufacturing the light emitting device 100 corresponding to the first embodiment:

[0100] Step K11: forming a first semiconductor layer 20 on the substrate 10 , wherein a surface of the first semiconductor layer 20 away from the substrate 10 is a first surface.

[0101] Step K12: Patterning the first surface to form a first semiconductor portion 21 and a plurality of first protrusions 22, wherein a portion of the first semiconductor portion 21 located in the secondary light-emitting area SA on a side away from the substrate 10 is a flat surface P, a plurality of first protrusions 22 are provided on a side of the first semiconductor portion 21 away from the substrate 10, the plurality of first protrusions 22 and the first semiconductor portion 21 are an integral structure, the plurality of first protrusions 22 are located in the main light-emitting area MA, and a portion of the first semiconductor portion 21 located in the main light-emitting area MA on a side close to the light-emitting layer 30 forms a concave-convex surface S with the plurality of first protrusions 22.

[0102] Step K13: forming a light emitting layer 30 on a side of the first semiconductor layer 20 away from the substrate 10 , wherein the light emitting layer 30 covers the first side.

[0103] Step K14 : forming the second semiconductor layer 40 , the transparent conductive layer 53 and the second electrode 52 in sequence on the side of the light emitting layer 30 away from the first semiconductor layer 20 , and forming the first electrode 51 on the side of the first semiconductor layer 20 away from the substrate 10 .

[0104] It can be seen from the manufacturing method of the light-emitting device 100 corresponding to the first embodiment that the integrated structure design of the first semiconductor portion 21 and the first protrusion 22 can be directly patterned on the surface of the first semiconductor layer 20, saving a process of forming a film on the side of the first semiconductor layer 20 away from the substrate 10, reducing the process steps, improving production efficiency, and reducing production costs. At the same time, compared with the double-layer structure, the integrated structure can further reduce the resistance encountered by the current passing through the concave-convex surface S, so that the current channel is concentrated in the main light-emitting area MA, weakening the sidewall light emission of the secondary light-emitting area SA, and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0105] Optional, see Figure 6 The shape of the first protrusion 22 is one or a combination of a column and a stage. In this embodiment, the multiple first protrusions 22 increase the contact area between the portion of the first surface corresponding to the main light-emitting area MA and the light-emitting layer 30. After the light-emitting layer 30 covers the first surface, the contact resistance between the main light-emitting area MA provided with the multiple first protrusions 22 and the adjacent light-emitting layer 30 is reduced, so that the current channel is concentrated in the main light-emitting area MA, the side wall light emission of the secondary light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0106] Optional, see Figure 7 The first protrusion 22 is in the shape of a cone, wherein the cone is a pyramid. Compared with a column and a table, a pyramid can focus the wide-angle light emitted from the light-emitting layer 30 to reduce the emission angle of the wide-angle light, thereby improving the front luminous efficiency of the light-emitting device 100.

[0107] Optional, see Figure 8 The first protrusion 22 is in the shape of a cone, wherein the cone is a circular cone. Compared with a pyramid, a circular cone can focus light from more directions with a large viewing angle, thereby further improving the front luminous efficiency of the light emitting device 100.

[0108] Optional, see Fig. 9 The shape of the first protrusion 22 is one of a sphere, an ellipsoid and a hemisphere. When the shape of the first protrusion 22 is a microlens structure formed by a hemisphere, the first protrusion 22 has the best focusing effect on the light output with a large viewing angle, and can better improve the efficiency of the front light output.

[0109] Optional, see Fig. 9 , a plurality of first protrusions 22 are arranged at intervals and evenly distributed on a side of the first semiconductor portion 21 close to the light emitting layer 30. In this embodiment, the plurality of first protrusions 22 are evenly distributed, which can prevent stress concentration from occurring on a side of the light emitting layer 30 close to the first semiconductor layer 20, thereby preventing cracks from occurring in the light emitting layer 30.

[0110] Optional, see Fig.10 In the plan view of the light-emitting device 100, the secondary light-emitting area SA is arranged around the primary light-emitting area MA, and the number of the first protrusions 22 per unit area decreases from the center of the primary light-emitting area MA to the edge of the primary light-emitting area MA. In this embodiment, the number of the first protrusions 22 per unit area located at the center of the primary light-emitting area MA is large, and the number of the first protrusions 22 per unit area located at the edge of the primary light-emitting area MA is small, so that the contact resistance formed between the center of the primary light-emitting area MA and the adjacent light-emitting layer 30 is smaller than the contact resistance formed between the edge of the primary light-emitting area MA and the adjacent light-emitting layer 30, so that the current channel is concentrated in the center of the primary light-emitting area MA, the sidewall light emission of the secondary light-emitting area SA is weakened, and the light emission at the edge of the primary light-emitting area MA is relatively weakened, and the front light emission efficiency corresponding to the center of the primary light-emitting area MA is further improved.

[0111] In the second embodiment of the present application:

[0112] In order to avoid redundancy, the second embodiment of the present application will describe parts different from the first embodiment of the present application.

[0113] The second embodiment of the present application is different from the first embodiment of the present application in that:

[0114] Optional, see Fig.11 Among the first, second and third surfaces of the light-emitting device 100, only the portion of the second surface located in the main light-emitting area MA is set as the concave-convex surface S, and the portion of the first surface located in the main light-emitting area MA and the portion of the third surface located in the main light-emitting area MA are set as the flat surface P.

[0115] In this embodiment, the holes generated by the second electrode 52 are transferred to the second semiconductor layer 40, and the second surface includes a concave-convex surface S corresponding to the main light-emitting area MA and a flat surface P corresponding to the sub-light-emitting area SA, and the flat surface P is located outside the concave-convex surface S. Since the first contact resistance formed by the concave-convex surface S of the second surface in contact with the adjacent surface of the light-emitting layer 30 is smaller than the second contact resistance formed by the flat surface P of the second surface in contact with the adjacent surface of the light-emitting layer 30, the current channel is concentrated in the main light-emitting area MA, the sidewall light emission of the sub-light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0116] Optionally, the second semiconductor layer 40 includes a second semiconductor portion 41 and a plurality of second protrusions 42. The second semiconductor portion 41 is located between the light-emitting layer 30 and the second electrode 52, and the portion of the second semiconductor portion 41 located in the secondary light-emitting area SA on the side close to the light-emitting layer 30 is a flat surface P. The plurality of second protrusions 42 are provided on the side of the second semiconductor portion 41 close to the light-emitting layer 30, and the plurality of second protrusions 42 and the second semiconductor portion 41 are an integral structure. The plurality of second protrusions 42 are located in the main light-emitting area MA, and the light-emitting layer 30 covers the plurality of second protrusions 42 and the second semiconductor portion 41. The portion of the side of the second semiconductor portion 41 close to the light-emitting layer 30 located in the main light-emitting area MA forms a concave-convex surface S with the plurality of second protrusions 42.

[0117] In this embodiment, the concave-convex surface S is formed by etching a side of the light emitting layer 30 away from the first semiconductor layer 20 to form a plurality of second concave portions, and directly growing a second semiconductor layer 40 on a side of the light emitting layer 30 away from the first semiconductor layer 20. At this time, a plurality of second protrusions 42 are formed on the second side of the second semiconductor layer 40, wherein the second protrusions 42 extend into the second concave portions. In the steps of the manufacturing method of the light emitting device 100 corresponding to the second embodiment:

[0118] Step K21 : forming a first semiconductor layer 20 and a light emitting layer 30 in sequence on the substrate 10 .

[0119] Step K22: patterning the surface of the light emitting layer 30 away from the first semiconductor layer 20 , and forming a plurality of second recesses in the portion of the surface of the light emitting layer 30 away from the first semiconductor layer 20 located in the main light emitting area MA.

[0120] Step K23: A second semiconductor layer 40 is formed on a side of the light-emitting layer 30 away from the first semiconductor layer 20, and a side of the second semiconductor layer 40 close to the light-emitting layer 30 is a second side. The second semiconductor layer 40 includes a second semiconductor portion 41 and a plurality of second protrusions 42, the plurality of second protrusions 42 are arranged on a side of the second semiconductor portion 41 close to the light-emitting layer 30, and each second protrusion 42 extends into a corresponding second recess, a side of the second semiconductor portion 41 close to the light-emitting layer 30 in the secondary light-emitting area SA is a flat surface P, a plurality of second protrusions 42 are arranged on a side of the second semiconductor portion 41 close to the light-emitting layer 30, the plurality of second protrusions 42 and the second semiconductor portion 41 are an integral structure, the plurality of second protrusions 42 are located in the main light-emitting area MA, and a side of the second semiconductor portion 41 close to the light-emitting layer 30 in the main light-emitting area MA forms a concave-convex surface S with the plurality of second protrusions 42.

[0121] Step K24 : a transparent conductive layer 53 and a second electrode 52 are sequentially formed on a side of the second semiconductor layer 40 away from the light emitting layer 30 , and a first electrode 51 is formed on a side of the first semiconductor layer 20 away from the substrate 10 .

[0122] It can be seen from the manufacturing method of the light-emitting device 100 corresponding to the second embodiment that the integrated structure design of the second semiconductor portion 41 and the second protrusion 42 can be directly patterned on the surface of the light-emitting layer 30, saving a process of forming a film on the side of the second semiconductor layer 40 close to the light-emitting layer 30, reducing the process steps, improving production efficiency, and reducing production costs. At the same time, compared with the double-layer structure, the integrated structure can further reduce the resistance encountered by the current passing through the concave-convex surface S, so that the current channel is concentrated in the main light-emitting area MA, weakening the sidewall light emission of the secondary light-emitting area SA, and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0123] Optional, see Fig.12 The second protrusion 42 is in the shape of a cone, a column, a table, a sphere, an ellipsoid, a hemisphere, or a combination thereof. In this embodiment, the plurality of second protrusions 42 increase the contact area between the portion of the second surface corresponding to the main light-emitting area MA and the light-emitting layer 30. After the light-emitting layer 30 covers the second surface, the contact resistance between the main light-emitting area MA provided with the plurality of second protrusions 42 and the adjacent light-emitting layer 30 is reduced, so that the current channel is concentrated in the main light-emitting area MA, the sidewall light emission of the secondary light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0124] Optional, see Fig.12, a plurality of second protrusions 42 are arranged at intervals and evenly distributed on a side of the second semiconductor portion 41 close to the light emitting layer 30. In this embodiment, the plurality of second protrusions 42 are evenly distributed, which can prevent stress concentration from occurring on a side of the light emitting layer 30 close to the second semiconductor layer 40, thereby preventing cracks from occurring in the light emitting layer 30.

[0125] Optional, see Fig.13 In the plan view of the light-emitting device 100, the secondary light-emitting area SA is arranged around the primary light-emitting area MA, and the number of the second protrusions 42 per unit area decreases from the center of the primary light-emitting area MA to the edge of the primary light-emitting area MA. In this embodiment, the number of the second protrusions 42 per unit area located at the center of the primary light-emitting area MA is large, and the number of the second protrusions 42 per unit area located at the edge of the primary light-emitting area MA is small, so that the contact resistance formed between the center of the primary light-emitting area MA and the adjacent light-emitting layer 30 is smaller than the contact resistance formed between the edge of the primary light-emitting area MA and the adjacent light-emitting layer 30, so that the current channel is concentrated in the center of the primary light-emitting area MA, the sidewall light emission of the secondary light-emitting area SA is weakened, and the light emission at the edge of the primary light-emitting area MA is relatively weakened, and the front light emission efficiency corresponding to the center of the primary light-emitting area MA is further improved.

[0126] In the third embodiment of the present application:

[0127] In order to avoid redundancy, the third embodiment of the present application will describe parts different from those of the first embodiment of the present application.

[0128] The third embodiment of the present application is different from the first embodiment of the present application in that:

[0129] Optional, see Fig.14 Among the first, second and third surfaces of the light-emitting device 100, only the portion of the third surface located in the main light-emitting area MA is set as a concave-convex surface S, and the portion of the first surface located in the main light-emitting area MA and the portion of the second surface located in the main light-emitting area MA are set as a flat surface P.

[0130] Optionally, the second semiconductor layer 40 includes a second semiconductor portion 41 and a plurality of third protrusions 43. The second semiconductor portion 41 is located on the side of the light-emitting layer 30 away from the first semiconductor layer 20. The portion of the second semiconductor portion 41 away from the light-emitting layer 30 and located in the secondary light-emitting area SA is a flat surface P. The plurality of third protrusions 43 are arranged on the side of the second semiconductor portion 41 away from the light-emitting layer 30, the plurality of third protrusions 43 and the second semiconductor portion 41 are an integral structure, the plurality of third protrusions 43 are located in the main light-emitting area MA, and the portion of the second semiconductor portion 41 away from the light-emitting layer 30 and located in the main light-emitting area MA forms a concave-convex surface S with the plurality of third protrusions 43.

[0131] The second electrode 52 may directly cover a side of the second semiconductor layer 40 facing away from the light emitting layer.

[0132] Optionally, the second semiconductor portion 41 is located between the light-emitting layer 30 and the transparent conductive layer 53. The portion of the second semiconductor portion 41 located in the secondary light-emitting area SA on the side close to the transparent conductive layer 53 is a flat surface P. The third protrusions 43 are provided on the side of the second semiconductor portion 41 close to the transparent conductive layer 53, and the plurality of third protrusions 43 and the second semiconductor portion 41 are an integral structure. The plurality of third protrusions 43 are located in the main light-emitting area MA, and the transparent conductive layer 53 covers the plurality of third protrusions 43 and the second semiconductor portion 41. The portion of the second semiconductor portion 41 located in the main light-emitting area MA on the side close to the transparent conductive layer 53 forms a concave-convex surface S with the plurality of third protrusions 43.

[0133] In this embodiment, the holes generated by the second electrode 52 are transferred to the transparent conductive layer 53, and the third surface includes a concave-convex surface S corresponding to the main light-emitting area MA and a flat surface P corresponding to the sub-light-emitting area SA, and the flat surface P is located outside the concave-convex surface S. Since the first contact resistance formed by the concave-convex surface S of the third surface in contact with the adjacent surface of the transparent conductive layer 53 is smaller than the second contact resistance formed by the flat surface P of the second surface in contact with the adjacent surface of the transparent conductive layer 53, the current channel is concentrated in the main light-emitting area MA, and relatively more holes are transferred to the part of the second semiconductor layer 40 located in the main light-emitting area MA, and relatively fewer holes are transferred to the part of the second semiconductor layer 40 located in the sub-light-emitting area SA. After the holes enter the second semiconductor layer 40, they move longitudinally to the light-emitting layer 30. At this time, the number of holes in the light-emitting layer 30 located in the main light-emitting area MA increases, and the number of holes in the light-emitting layer 30 located in the sub-light-emitting area SA decreases. The holes recombine with electrons in the light-emitting layer 30 to form photons and emit light, thereby weakening the sidewall light emission of the sub-light-emitting area SA and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0134] In this embodiment, the concavo-convex surface S is formed by etching the side of the second semiconductor layer 40 away from the light emitting layer 30. In the steps of the manufacturing method of the light emitting device 100 corresponding to the third embodiment:

[0135] Step K31: forming a first semiconductor layer 20 , a light emitting layer 30 and a second semiconductor layer 40 in sequence on the substrate 10 , wherein a surface of the second semiconductor layer 40 away from the substrate 10 is a third surface.

[0136] Step K32: Patterning the third surface to form a second semiconductor portion 41 and a plurality of third protrusions 43, wherein a portion of the second semiconductor portion 41 that is away from the substrate 10 and is located in the secondary light-emitting area SA is a flat surface P, and a plurality of third protrusions 43 are provided on a portion of the second semiconductor portion 41 that is away from the substrate 10, and the plurality of third protrusions 43 are an integral structure with the second semiconductor portion 41, and the plurality of third protrusions 43 are located in the main light-emitting area MA, and a portion of the second semiconductor portion 41 that is away from the light-emitting layer 30 and is located in the main light-emitting area MA forms a concave-convex surface S with the plurality of third protrusions 43.

[0137] Step K33: forming a transparent conductive layer 53 on a side of the second semiconductor layer 40 away from the substrate 10 , wherein the transparent conductive layer 53 covers the third side.

[0138] Step K34 : forming a second electrode 52 on a side of the transparent conductive layer 53 away from the second semiconductor layer 40 , and forming a first electrode 51 on a side of the first semiconductor layer 20 away from the substrate 10 .

[0139] It can be seen from the manufacturing method of the light-emitting device 100 corresponding to the third embodiment that the integrated structure design of the second semiconductor portion 41 and the third protrusion 43 can be directly patterned on the surface of the second semiconductor layer 40, saving a process of forming a film on the side of the second semiconductor layer 40 away from the substrate 10, reducing the process steps, improving production efficiency, and reducing production costs. At the same time, compared with the double-layer structure, the integrated structure can further reduce the resistance encountered by the current passing through the concave-convex surface S, so that the current channel is concentrated in the main light-emitting area MA, weakening the sidewall light emission of the secondary light-emitting area SA, and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0140] Optional, see Fig.15 The shape of the third protrusion 43 is one or a combination of a cone, a column, a table, a sphere, an ellipsoid, a hemisphere. In this embodiment, the plurality of third protrusions 43 increase the contact area between the portion of the third surface corresponding to the main light-emitting area MA and the transparent conductive layer 53. After the transparent conductive layer 53 covers the third surface, the contact resistance between the main light-emitting area MA provided with the plurality of third protrusions 43 and the adjacent transparent conductive layer 53 is reduced, so that the current channel is concentrated in the main light-emitting area MA, the side wall light emission of the secondary light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0141] Optional, see Fig.15 The plurality of third protrusions 43 are arranged at intervals and evenly distributed on the side of the second semiconductor portion 41 away from the light emitting layer 30. In this embodiment, the plurality of third protrusions 43 are evenly distributed, which can prevent stress concentration from occurring on the side of the transparent conductive layer 53 close to the second semiconductor layer 40, thereby preventing cracks from occurring in the transparent conductive layer 53.

[0142] Optional, see Fig.16 In the plan view of the light emitting device 100, the secondary light emitting area SA is arranged around the main light emitting area MA, and the number of the third protrusions 43 per unit area decreases from the center of the main light emitting area MA to the edge of the main light emitting area MA. In this embodiment, the number of the third protrusions 43 per unit area located at the center of the main light emitting area MA is large, and the number of the third protrusions 43 per unit area located at the edge of the main light emitting area MA is small, so that the contact resistance formed between the center of the main light emitting area MA and the adjacent second semiconductor layer 40 is smaller than the contact resistance formed between the edge of the main light emitting area MA and the adjacent second semiconductor layer 40, so that the current channel is concentrated in the center of the main light emitting area MA, the side wall light emission of the secondary light emitting area SA is weakened, and the light emission at the edge of the main light emitting area MA is relatively weakened, and the front light emission efficiency corresponding to the center of the main light emitting area MA is further improved.

[0143] In the fourth embodiment of the present application:

[0144] In order to avoid redundancy, the fourth embodiment of the present application will describe the parts different from the third embodiment of the present application.

[0145] The fourth embodiment of the present application is different from the third embodiment of the present application in that:

[0146] Optional, see Fig.17 Among the first surface, the second surface and the third surface of the light-emitting device 100, only the portion of the third surface located in the main light-emitting area MA and the portion of the second surface located in the main light-emitting area MA are set as the concave-convex surface S, and the portion of the first surface located in the main light-emitting area MA is set as the flat surface P.

[0147] In this embodiment, the holes generated by the second electrode 52 are transferred to the transparent conductive layer 53, and the third surface of the second semiconductor layer 40 close to the transparent conductive layer 53 includes a concave-convex surface S corresponding to the main light-emitting area MA and a flat surface P corresponding to the sub-light-emitting area SA, and the flat surface P is located outside the concave-convex surface S. Since the first contact resistance formed by the concave-convex surface S of the third surface in contact with the adjacent surface of the transparent conductive layer 53 is smaller than the second contact resistance formed by the flat surface P of the second surface in contact with the adjacent surface of the transparent conductive layer 53, the current channel is concentrated in the main light-emitting area MA, and relatively more holes are transferred to the portion of the second semiconductor layer 40 located in the main light-emitting area MA, and relatively fewer holes are transferred to the portion of the second semiconductor layer 40 located in the sub-light-emitting area SA.

[0148] After entering the second semiconductor layer 40, the holes move longitudinally to the second surface of the second semiconductor layer 40 close to the light-emitting layer 30. The second surface includes a concave-convex surface S corresponding to the main light-emitting area MA and a flat surface P corresponding to the sub-light-emitting area SA, and the flat surface P is located outside the concave-convex surface S. Since the first contact resistance formed by the concave-convex surface S of the second surface in contact with the adjacent surface of the light-emitting layer 30 is smaller than the second contact resistance formed by the flat surface P of the second surface in contact with the adjacent surface of the light-emitting layer 30, the current channel is concentrated in the main light-emitting area MA, the sidewall light emission of the sub-light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0149] In the fourth embodiment, the concavo-convex surface S of the third surface can play a preliminary role in concentrating holes, so that more holes are distributed in the portion of the second semiconductor layer 40 located in the main light-emitting area MA, and the number of holes in the portion of the second semiconductor layer 40 located in the secondary light-emitting area SA is reduced. In the process of holes entering the light-emitting layer 30 from the second semiconductor layer 40, the concavo-convex surface S of the second surface can further reduce the contact resistance, so that the current channel is concentrated in the portion of the light-emitting layer 30 located in the main light-emitting area MA, further weakening the sidewall light emission of the secondary light-emitting area SA, and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0150] Optionally, the second semiconductor layer 40 further includes a plurality of second protrusions 42. The plurality of second protrusions 42 are disposed on a side of the second semiconductor portion 41 close to the light-emitting layer 30, and the plurality of second protrusions 42 and the second semiconductor portion 41 are an integral structure. The plurality of second protrusions 42 are located in the main light-emitting area MA, and the light-emitting layer 30 covers the plurality of second protrusions 42 and the second semiconductor portion 41. A portion of a side of the second semiconductor portion 41 close to the light-emitting layer 30 located in the main light-emitting area MA forms a concave-convex surface S with the plurality of second protrusions 42.

[0151] The manufacturing method of forming the second protrusion 42 on the second surface and the manufacturing method of forming the third protrusion 43 on the third surface are respectively described in the second embodiment and the third embodiment, and are not described one by one here.

[0152] Due to the integrated structural design of the second semiconductor portion 41, the second protrusion 42, and the third protrusion 43, compared to the three-layer structure, the resistance encountered by the current passing through the concave-convex surface S can be further reduced, so that the current channel is concentrated in the main light-emitting area MA, the side wall light emission of the secondary light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0153] Optionally, the shape of the second protrusion 42 is one or a combination of a cone, a column, a table, a sphere, an ellipsoid, a hemisphere. In this embodiment, the plurality of second protrusions 42 increase the contact area between the portion of the second surface corresponding to the main light-emitting area MA and the light-emitting layer 30. After the light-emitting layer 30 covers the second surface, the contact resistance between the main light-emitting area MA provided with the plurality of second protrusions 42 and the adjacent light-emitting layer 30 is reduced, so that the current channel is concentrated in the main light-emitting area MA, the side wall light emission of the secondary light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0154] Optionally, a plurality of second protrusions 42 are arranged at intervals and evenly distributed on a side of the second semiconductor portion 41 close to the light emitting layer 30. In this embodiment, the plurality of second protrusions 42 are evenly distributed, which can prevent stress concentration on a side of the light emitting layer 30 close to the second semiconductor layer 40, thereby preventing cracks in the light emitting layer 30.

[0155] Optionally, in a plan view of the light-emitting device 100, the secondary light-emitting area SA is arranged around the main light-emitting area MA, and the number of the second protrusions 42 per unit area decreases from the center of the main light-emitting area MA to the edge of the main light-emitting area MA. In this embodiment, the number of the second protrusions 42 per unit area located at the center of the main light-emitting area MA is large, and the number of the second protrusions 42 per unit area located at the edge of the main light-emitting area MA is small, so that the contact resistance formed between the center of the main light-emitting area MA and the adjacent light-emitting layer 30 is smaller than the contact resistance formed between the edge of the main light-emitting area MA and the adjacent light-emitting layer 30, so that the current channel is concentrated in the center of the main light-emitting area MA, the sidewall light emission of the secondary light-emitting area SA is weakened, and the light emission at the edge of the main light-emitting area MA is relatively weakened, and the front light-emitting efficiency corresponding to the center of the main light-emitting area MA is further improved.

[0156] Optionally, in the plan view of the light emitting device 100, the area of ​​the concavo-convex surface S of the third surface is greater than the area of ​​the concavo-convex surface S of the second surface. Since the third surface plays a preliminary concentration role on the holes, the area of ​​the concavo-convex surface S of the third surface can be relatively large. The concavo-convex surface S of the second surface is to reduce the sidewall light emission of the light emitting device 100, so the area of ​​the concavo-convex surface S of the second surface can be relatively small, further weakening the light emission of the secondary light emitting area SA, and further improving the front light emitting efficiency of the main light emitting area MA.

[0157] In the fifth embodiment of the present application:

[0158] In order to avoid redundancy, the fifth embodiment of the present application will describe the parts different from the fourth embodiment of the present application.

[0159] The fifth embodiment of the present application is different from the fourth embodiment of the present application in that:

[0160] Optional, see Fig.18 Among the first surface, the second surface and the third surface of the light-emitting device 100, the portion of the third surface located in the main light-emitting area MA, the portion of the second surface located in the main light-emitting area MA, and the portion of the first surface located in the main light-emitting area MA are all set to a concave-convex surface S.

[0161] In this embodiment, the electrons generated by the first electrode 51 are transferred to the first semiconductor layer 20, and the first surface includes a concave-convex surface S corresponding to the main light-emitting area MA and a flat surface P corresponding to the sub-light-emitting area SA, and the flat surface P is located outside the concave-convex surface S. Since the first contact resistance formed by the concave-convex surface S of the first surface in contact with the adjacent surface of the light-emitting layer 30 is smaller than the second contact resistance formed by the flat surface P of the first surface in contact with the adjacent surface of the light-emitting layer 30, the current channel is concentrated in the main light-emitting area MA, the sidewall light emission of the sub-light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0162] Optionally, the first semiconductor layer 20 includes a first semiconductor portion 21 and a plurality of first protrusions 22. The first semiconductor portion 21 is located between the substrate 10 and the light-emitting layer 30, and a portion of the first semiconductor portion 21 located in the secondary light-emitting area SA on a side close to the light-emitting layer 30 is a flat surface P. A plurality of first protrusions 22 are provided on a side of the first semiconductor portion 21 close to the light-emitting layer 30, and the plurality of first protrusions 22 and the first semiconductor portion 21 are an integral structure. The plurality of first protrusions 22 are located in the main light-emitting area MA, and the light-emitting layer 30 covers a portion of the plurality of first protrusions 22 and the first semiconductor portion 21. A portion of the first semiconductor portion 21 located in the main light-emitting area MA on a side close to the light-emitting layer 30 forms a concave-convex surface S with the plurality of first protrusions 22.

[0163] The method for forming the first protrusion 22 on the first surface is described in the first embodiment and will not be described in detail here.

[0164] The integrated structure design of the first semiconductor portion 21 and the first protrusion 22 can be directly patterned on the surface of the first semiconductor layer 20, saving a process of forming a film on the side of the first semiconductor layer 20 away from the substrate 10, reducing the number of steps, improving production efficiency, and reducing production costs. At the same time, compared with the double-layer structure, the integrated structure can further reduce the resistance encountered by the current passing through the concave-convex surface S, so that the current channel is concentrated in the main light-emitting area MA, weakening the sidewall light emission of the secondary light-emitting area SA, and improving the front light-emitting efficiency corresponding to the main light-emitting area MA.

[0165] Optionally, the shape of the first protrusion 22 is a column and a table, or a combination of several thereof. In this embodiment, the plurality of first protrusions 22 increase the contact area between the portion of the first surface corresponding to the main light-emitting area MA and the light-emitting layer 30. After the light-emitting layer 30 covers the first surface, the contact resistance between the main light-emitting area MA provided with the plurality of first protrusions 22 and the adjacent light-emitting layer 30 is reduced, so that the current channel is concentrated in the main light-emitting area MA, the sidewall light emission of the secondary light-emitting area SA is weakened, and the front light-emitting efficiency corresponding to the main light-emitting area MA is improved.

[0166] Optionally, the first protrusion 22 is in the shape of a cone, wherein the cone is a pyramid. Compared with a column and a table, a pyramid can focus the wide-angle light emitted from the light-emitting layer 30 to reduce the emission angle of the wide-angle light, thereby improving the front luminous efficiency of the light-emitting device 100.

[0167] Optionally, the first protrusion 22 is in the shape of a cone, wherein the cone is a circular cone. Compared with a pyramid, a circular cone can focus light emitted from more directions with a large viewing angle, thereby further improving the front luminous efficiency of the light-emitting device 100.

[0168] Optionally, the shape of the first protrusion 22 is one or a combination of a sphere, an ellipsoid and a hemisphere. When the shape of the first protrusion 22 is a microlens structure formed by a hemisphere, the first protrusion 22 has the best focusing effect on the light output at a large viewing angle, which can better improve the efficiency of the front light output.

[0169] Optionally, a plurality of first protrusions 22 are arranged at intervals and evenly distributed on a side of the first semiconductor portion 21 close to the light emitting layer 30. In this embodiment, the plurality of first protrusions 22 are evenly distributed, which can prevent stress concentration from occurring on a side of the light emitting layer 30 close to the first semiconductor layer 20, thereby preventing cracks from occurring in the light emitting layer 30.

[0170] Optionally, in a plan view of the light-emitting device 100, the secondary light-emitting area SA is arranged around the main light-emitting area MA, and the number of the first protrusions 22 per unit area decreases from the center of the main light-emitting area MA to the edge of the main light-emitting area MA. In this embodiment, the number of the first protrusions 22 per unit area located at the center of the main light-emitting area MA is large, and the number of the first protrusions 22 per unit area located at the edge of the main light-emitting area MA is small, so that the contact resistance formed between the center of the main light-emitting area MA and the adjacent light-emitting layer 30 is smaller than the contact resistance formed between the edge of the main light-emitting area MA and the adjacent light-emitting layer 30, so that the current channel is concentrated in the center of the main light-emitting area MA, the sidewall light emission of the secondary light-emitting area SA is weakened, and the light emission at the edge of the main light-emitting area MA is relatively weakened, and the front light-emitting efficiency corresponding to the center of the main light-emitting area MA is further improved.

[0171] Optionally, in the plan view of the light-emitting device 100, the area of ​​the concave-convex surface S of the second surface is greater than the area of ​​the concave-convex surface S of the first surface. Since in the micro-light-emitting diode, the rate at which the first semiconductor layer 20 transmits electrons is greater than the rate at which the second semiconductor layer 40 transmits holes, an electron and a hole will recombine in the light-emitting layer 30 to form a photon and then emit light. In order to make the recombination of electrons and holes more balanced, the area of ​​the concave-convex surface S of the second surface is set to be greater than the area of ​​the concave-convex surface S of the first surface. At this time, the rate at which the second semiconductor layer 40 transmits holes is relatively increased, and the rate at which the first semiconductor layer 20 transmits electrons is relatively increased. The effect of balancing the number of electrons and the number of holes in the light-emitting layer 30 is achieved, thereby improving the front luminous efficiency of the light-emitting device 100.

[0172] Optionally, in the plan view of the light emitting device 100, the length of the side or diagonal of the first protrusion 22, the second protrusion 42 and the third protrusion 43 is in the range of 20 nanometers to 1000 nanometers. The length of the side or diagonal of the first protrusion 22, the second protrusion 42 and the third protrusion 43 is a value selected from 20 nanometers, 50 nanometers, 100 nanometers, 150 nanometers, 200 nanometers, 250 nanometers, 300 nanometers, 350 nanometers, 400 nanometers, 450 nanometers, 500 nanometers, 550 nanometers, 600 nanometers, 650 nanometers, 700 nanometers, 750 nanometers, 800 nanometers, 850 nanometers, 900 nanometers, 950 nanometers and 1000 nanometers.

[0173] Preferably, the side length or diagonal length of the first protrusion 22, the second protrusion 42 and the third protrusion 43 is in the range of 20 nanometers to 200 nanometers. At this time, in the plan view of the light-emitting device 100, the number of the first protrusion 22, the second protrusion 42 and the third protrusion 43 per unit area is relatively large, which can further reduce the contact resistance and improve the front light-emitting efficiency of the light-emitting device 100.

[0174] The above is a detailed description of the specific implementation of the present application. The above implementation disclosed in the present application is only the preferred implementation of the present application. For ordinary technicians in this field, many modifications and improvements can be made without departing from the concept of the present application. These modifications and improvements all fall within the scope of protection defined by the claims of the present application.

Claims

1. A light emitting device, characterized in that: The invention comprises a main light-emitting area and a secondary light-emitting area located at at least one side of the main light-emitting area, comprising: substrate; A first semiconductor layer, disposed on one side of the substrate; A light-emitting layer is provided on a side of the first semiconductor layer away from the substrate, and a contact surface between the first semiconductor layer and the light-emitting layer is a first surface; A second semiconductor layer is provided on a side of the light emitting layer away from the first semiconductor layer, wherein a contact surface between the second semiconductor layer and the light emitting layer is a second surface, and a side of the second semiconductor layer away from the light emitting layer is a third surface; A first electrode connected to the first semiconductor layer; and a second electrode connected to the second semiconductor layer; Wherein, the portion of at least one of the first surface, the second surface and the third surface located in the main light-emitting area is a first surface, and the portions of the first surface, the second surface and the third surface located in the secondary light-emitting area are second surfaces; In a plan view of the light emitting device, a first contact resistance per unit area formed by the first surface contacting an adjacent film layer surface is smaller than a second contact resistance per unit area formed by the second surface contacting an adjacent film layer surface.

2. The light emitting device according to claim 1, characterized in that: The first surface is a concave-convex surface, and the second surface is a flat surface.

3. The light emitting device according to claim 2, characterized in that: The first semiconductor layer comprises: A first semiconductor portion, wherein the first semiconductor portion is located between the substrate and the light-emitting layer, and a portion of a surface of the first semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is the flat surface; and A plurality of first protrusions are arranged on a side of the first semiconductor part close to the light-emitting layer, the plurality of first protrusions and the first semiconductor part are an integral structure, the plurality of first protrusions are located in the main light-emitting area, the light-emitting layer covers the plurality of first protrusions and a portion of the first semiconductor part, and a side of the first semiconductor part close to the light-emitting layer, a portion of which is located in the main light-emitting area, forms the concave-convex surface with the plurality of first protrusions.

4. The light emitting device according to claim 2, characterized in that: The second semiconductor layer comprises: A second semiconductor portion, wherein the second semiconductor portion is located between the light-emitting layer and the second electrode, and a portion of a surface of the second semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is the flat surface; and A plurality of second protrusions are arranged on a side of the second semiconductor portion close to the light-emitting layer, the plurality of second protrusions and the second semiconductor portion are an integral structure, the plurality of second protrusions are located in the main light-emitting area, the light-emitting layer covers the plurality of second protrusions and the second semiconductor portion, and a portion of a side of the second semiconductor portion close to the light-emitting layer located in the main light-emitting area forms the concave-convex surface with the plurality of second protrusions.

5. The light emitting device according to claim 2, characterized in that: The second semiconductor layer comprises: a second semiconductor portion, the second semiconductor portion being located on a side of the light emitting layer away from the first semiconductor layer, and a portion of a side of the second semiconductor portion away from the light emitting layer and located in the secondary light emitting region being the flat surface; and A plurality of third protrusions are arranged on a side of the second semiconductor portion away from the light-emitting layer, the plurality of third protrusions and the second semiconductor portion are an integral structure, the plurality of third protrusions are located in the main light-emitting area, and a portion of a side of the second semiconductor portion away from the light-emitting layer located in the main light-emitting area forms the concave-convex surface with the plurality of third protrusions.

6. The light emitting device according to claim 5, characterized in that: A portion of a surface of the second semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is a flat surface; The second semiconductor layer also includes a plurality of second protrusions, which are arranged on a side of the second semiconductor portion close to the light-emitting layer. The plurality of second protrusions and the second semiconductor portion are an integral structure. The plurality of second protrusions are located in the main light-emitting area. The light-emitting layer covers the plurality of second protrusions and the second semiconductor portion. A portion of a side of the second semiconductor portion close to the light-emitting layer located in the main light-emitting area forms the concave-convex surface with the plurality of second protrusions.

7. The light emitting device according to claim 6, characterized in that: The first semiconductor layer comprises: A first semiconductor portion, wherein the first semiconductor portion is located between the substrate and the light-emitting layer, and a portion of a surface of the first semiconductor portion close to the light-emitting layer and located in the secondary light-emitting region is a flat surface; and A plurality of first protrusions are arranged on a side of the first semiconductor part close to the light-emitting layer, the plurality of first protrusions and the first semiconductor part are an integral structure, the plurality of first protrusions are located in the main light-emitting area, the light-emitting layer covers the plurality of first protrusions and a portion of the first semiconductor part, and a side of the first semiconductor part close to the light-emitting layer, a portion of which is located in the main light-emitting area, forms the concave-convex surface with the plurality of first protrusions.

8. The light emitting device according to claim 7, characterized in that: Multiple first protrusions are spaced apart and evenly distributed on a side of the first semiconductor portion close to the light-emitting layer, multiple second protrusions are spaced apart and evenly distributed on a side of the second semiconductor portion close to the light-emitting layer, and multiple third protrusions are spaced apart and evenly distributed on a side of the second semiconductor portion away from the light-emitting layer.

9. The light emitting device according to claim 7, characterized in that: In a plan view of the light emitting device, the secondary light emitting area is arranged around the primary light emitting area; The number of the first protrusions per unit area decreases from the center of the main light-emitting area to the edge of the main light-emitting area; The number of the second protrusions per unit area decreases from the center of the main light-emitting area to the edge of the main light-emitting area; The number of the third protrusions per unit area decreases from the center of the main light-emitting area to the edge of the main light-emitting area.

10. The light emitting device according to any one of claims 7 to 9, characterized in that: The shape of the first protrusion is one or a combination of cone, cylinder, table, sphere, ellipsoid, hemisphere; The shape of the second protrusion is one or a combination of cone, cylinder, table, sphere, ellipsoid, hemisphere; The shape of the third protrusion is one or a combination of cone, cylinder, table, sphere, ellipsoid, hemisphere.

11. The light emitting device according to any one of claims 1 to 9, characterized in that: The light emitting device further comprises: a current blocking layer, disposed on a side of the second semiconductor layer away from the light-emitting layer; a transparent conductive layer, disposed on a side of the second semiconductor layer away from the light-emitting layer and covering the current blocking layer, wherein the transparent conductive layer connects the second semiconductor layer and the second electrode; and a reflective layer covering the first semiconductor layer, the light-emitting layer, the second semiconductor layer and the transparent conductive layer; the reflective layer is provided with a first through hole and a second through hole; the first through hole exposes a portion of the transparent conductive layer; the second through hole exposes a portion of the first semiconductor layer; the first electrode is connected to the first semiconductor layer through the first through hole; and the second electrode is connected to the transparent conductive layer through the second through hole.

12. A display device, characterized in that: The invention comprises a light emitting device as claimed in any one of claims 1 to 11.

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