Manufacturing method and structure of LED light-emitting array and light-emitting module

Abstract

The invention provides a manufacturing method and structure of an LED light-emitting array structure and a light-emitting module. A plurality of LED light-emitting units distributed in an array mode are machined on one surface of a growth substrate; each LED light-emitting unit comprises an N-type structure, a quantum well and a P-type structure which are sequentially distributed in the depth direction, and metal convex points are machined on the surface of the growth substrate; the LED light-emitting units are located between two or four adjacent LED light-emitting units; sequentially processing a dielectric layer and a metal interconnection layer on the growth substrate between the N-type structures along the depth direction; the metal interconnection layer is in contact with the metal bumps; removing the dielectric layer to form an air layer; processing a P contact layer on one side, far away from the N-type structure, of the P-type structure; processing an insulating layer on the metal interconnection layer; the growth substrate is removed, and the first temporary substrate is bonded at the position. According to the technical scheme, the growth substrate is removed, and the light emitting effect and the heat dissipation effect are better; due to the design of the metal bumps between the N-type structures, the metal interconnection layer is not easy to break.

Description

Technical Field

[0001] The present invention relates to the field of LED lighting technology, and in particular to a manufacturing method, structure and lighting module of an LED lighting array. Background Art

[0002] With the continuous progress and breakthroughs in micro LED technology and the rapid development of smart driving technology, headlights that can be adaptively adjusted according to the environment and driving needs have gradually become popular products on the market. In particular, internationally renowned LED manufacturers have launched pixelated headlight chip modules based on LED or microLED technology. These advanced headlights can not only provide better lighting effects, but also improve the safety of night driving and reduce interference to other road users through intelligent adjustment. These innovative headlight modules achieve more flexible and personalized lighting solutions by precisely controlling the brightness and color of each pixel, thus setting off a technological revolution in the field of automotive lighting.

[0003] At present, the light-emitting surface of LED light-emitting units on the market usually uses sapphire as the substrate material. However, this design has some obvious shortcomings. First, the light-emitting effect is not ideal, because there is a large difference between the refractive index of the sapphire substrate and the refractive index of the LED chip, which causes multiple reflections and refractions of the light at the interface, thereby reducing the light extraction efficiency. Secondly, the heat dissipation performance is also unsatisfactory. The thermal conductivity of sapphire material is relatively low, which makes it difficult to quickly conduct and dissipate the heat generated during the operation of the LED, thereby affecting the stability and life of the LED. Therefore, this LED light-emitting unit with a sapphire substrate needs to be improved in terms of light-emitting effect and heat dissipation performance.

[0004] In the existing common cathode LED array, the common cathode is achieved by directly setting a metal interconnection layer between the LED light-emitting units. The metal interconnection layer between the LED light-emitting units has a relatively large span and is prone to breakage. Summary of the invention

[0005] The present invention provides a method for manufacturing an LED light emitting array, a structure and a light emitting module to solve the problems in the prior art of poor light emission and heat dissipation effects and easy fracture of a metal interconnection layer.

[0006] In order to solve the above technical problems, the present invention is achieved through the following technical solutions:

[0007] According to a first aspect of the present invention, there is provided a method for manufacturing an LED light emitting array structure, comprising:

[0008] Processing a plurality of array-distributed LED light-emitting units on a surface of a growth substrate; wherein the LED light-emitting unit comprises an N-type structure, a quantum well, and a P-type structure distributed in sequence along a depth direction, and the N-type structure is close to the growth substrate;

[0009] Processing metal bumps on the surface of the growth substrate; the metal bumps are located between the LED light-emitting units;

[0010] In the depth direction, a dielectric layer and a metal interconnect layer are sequentially processed on the growth substrate between the N-type structures; wherein the metal interconnect layer is in contact with the metal bumps;

[0011] removing the dielectric layer to form an air layer;

[0012] Processing a P contact layer on a side of the P-type structure away from the N-type structure;

[0013] Processing an insulating layer on the metal interconnect layer, wherein the insulating layer does not cover the surface of the P contact layer;

[0014] The growth substrate is removed and a first temporary substrate is bonded in its place.

[0015] Optionally, between processing the insulating layer on the metal interconnect layer and removing the growth substrate, the method further includes:

[0016] Bonding a second temporary substrate on a side of the P contact layer away from the P-type structure;

[0017] Correspondingly, the removing of the growth substrate, after bonding the first temporary substrate at the position, further comprises:

[0018] The second temporary substrate is removed.

[0019] Optionally, the removing the growth substrate and, after bonding a first temporary substrate at the position thereof, further comprises:

[0020] Bonding the LED light-emitting unit to the driver chip;

[0021] The first temporary substrate is removed.

[0022] Optionally, in processing a plurality of LED light-emitting units distributed in an array on a surface of a growth substrate, a first step structure is formed between a side wall of the N-type structure and a side wall of the quantum well;

[0023] Correspondingly, along the depth direction, a dielectric layer and a metal interconnection layer are sequentially processed on the growth substrate between the N-type structures, and the depth of the metal interconnection layer at least covers the first step structure.

[0024] According to a second aspect of the present invention, there is provided an LED light emitting array structure, comprising:

[0025] Temporary substrate;

[0026] A plurality of array-distributed LED light-emitting units are located on a surface of the temporary substrate; along the depth direction of the LED light-emitting unit, the LED light-emitting unit sequentially comprises: an N-type structure, a quantum well, a P-type structure, and a P contact layer; the N-type structure is located on a side well close to the temporary substrate; the P contact layer is used to lead out the positive electrode of the LED light-emitting unit;

[0027] A metal bump, which is disposed on a surface of the temporary substrate and is located between the LED light-emitting units;

[0028] An air bridge connected between the N-type structures; along the depth direction of the LED light-emitting unit, the air bridge comprises a metal interconnection layer and an air layer in sequence, the air layer is located between the metal interconnection layer and the temporary substrate; the metal bump is in contact with the metal interconnection layer; the metal interconnection layer is used to realize a common cathode between the LED light-emitting units;

[0029] An insulating layer covers a side of the metal interconnection layer away from the temporary substrate.

[0030] Optionally, the insulating layer does not cover the metal bump, and the metal bump is used to lead out the negative electrode of the LED light-emitting unit.

[0031] Optionally, a first stepped structure is formed between the sidewall of the N-type structure and the sidewall of the quantum well;

[0032] The depth of the metal interconnection layer at least covers the first stepped structure.

[0033] Optionally, the surface edge of the N-type structure is not covered by the quantum well;

[0034] The metal interconnection layer also covers a portion of the surface of the N-type structure, where the portion of the surface refers to a surface of the N-type structure that is adjacent to the quantum well and not covered by the quantum well.

[0035] Optionally, the sidewall of the N-type structure has at least one second step structure; and the depth of the metal interconnect layer covers the second step structure.

[0036] Optionally, along the depth direction of the LED light-emitting unit, the P contact layer includes: an ohmic contact layer, a reflector layer, and a bonding bump in sequence; the ohmic contact layer is located on a side close to the P-type structure. Temporary substrate;

[0037] Optionally, the LED light-emitting array structure further includes: a passivation insulating layer, which at least wraps the quantum hydrazine and the side wall of the P-type structure.

[0038] According to a third aspect of the present invention, there is provided a light emitting module, comprising: an LED light emitting array structure, a driving chip;

[0039] Wherein, the LED light emitting array structure comprises:

[0040] A plurality of LED light-emitting units distributed in an array; along the depth direction of the LED light-emitting unit, the LED light-emitting unit sequentially comprises: an N-type structure, a quantum well, a P-type structure, and a P contact layer; a first step structure is formed between the side wall of the N-type structure and the side wall of the P-type structure; the P contact layer is used to lead out the positive electrode of the LED light-emitting unit;

[0041] An air bridge connected between the N-type structures; along the depth direction of the LED light-emitting unit, the air bridge comprises a metal interconnection layer and an air layer in sequence; along the depth direction of the LED light-emitting unit, the air layer is located on a side of the metal interconnection layer away from the quantum well; the depth of the metal interconnection layer at least covers the first stepped structure; the metal interconnection layer is used to realize a common cathode between the LED light-emitting units;

[0042] an insulating layer covering a side of the metal interconnect layer away from the air layer;

[0043] The driving chip is bonded to the LED light emitting array structure.

[0044] The LED light-emitting array structure, light-emitting module and manufacturing method provided by the present invention peel off the sapphire substrate and bond a temporary substrate at the original position. The substrate is temporary and is removed after the LED light-emitting array structure is bonded to the driver chip; the light-emitting effect and the heat dissipation effect are better.

[0045] In addition, in the LED light-emitting array structure, light-emitting module and manufacturing method provided by the present invention, metal bumps are arranged between two or four adjacent LED light-emitting units, which are in contact with the metal interconnection layer, thereby reducing the distance between metals and making it less likely to break.

[0046] In an optional solution of the present invention, the insulating layer does not cover the metal bumps, and the metal bumps can be used to lead out the negative pole of the LED light-emitting unit, reducing the distance between the connection point of the driver chip and the LED light-emitting unit, so that the current expansion uniformity is better, the conductivity uniformity is better, and the light emission is more uniform.

[0047] In an optional solution of the present invention, a first step structure is formed between the side wall of the N-type structure and the side wall of the P-type structure, and the depth of the metal interconnection layer at least covers the first step structure. The design of the step structure makes the connection between the metal interconnection layer and the N-type structure more secure and has better electrical performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0049] Figure 1 A flowchart of a method for manufacturing an LED light emitting array structure according to an embodiment of the present invention;

[0050] Figure 2a is a cross-sectional view of an LED light emitting array structure in step S11 of an embodiment of the present invention;

[0051] Figure 2b is a cross-sectional view of an LED light emitting array structure in step S12 of an embodiment of the present invention;

[0052] Figure 2c is a cross-sectional view of an LED light emitting array structure in step S13 of an embodiment of the present invention;

[0053] Figure 2d is a cross-sectional view of an LED light emitting array structure in step S14 of an embodiment of the present invention;

[0054] Figure 2e is a cross-sectional view of an LED light emitting array structure in step S15 of an embodiment of the present invention;

[0055] Figure 2f is a cross-sectional view of an LED light emitting array structure in step S16 of an embodiment of the present invention;

[0056] Figure 3 is a schematic top view of an LED light emitting array structure in step S31 of an embodiment of the present invention;

[0057] Figure 4 A top view of the LED light emitting array structure in step S31 of another embodiment of the present invention;

[0058] Figure 5 for Figure 3 A partial longitudinal cross-sectional view along the AA direction;

[0059] Figure 6 for Figure 4 A partial longitudinal cross-sectional view along direction BB;

[0060] Figure 7 A schematic top view of the LED light emitting array structure in step S12 of a preferred embodiment of the present invention;

[0061] Figure 8a A cross-sectional view of the LED light-emitting array structure in step S21 of a preferred embodiment of the present invention;

[0062] Figure 8b A cross-sectional view of the LED light-emitting array structure in step S16 of a preferred embodiment of the present invention;

[0063] Figure 8c A cross-sectional view of the LED light-emitting array structure in step S16 of a preferred embodiment of the present invention;

[0064] Figure 8d A cross-sectional view of the LED light-emitting array structure in step S22 of a preferred embodiment of the present invention;

[0065] Fig. 9 A cross-sectional view of the LED light-emitting array structure in step S11 of a preferred embodiment of the present invention;

[0066] Fig.10 A cross-sectional view of an LED light emitting array structure according to an embodiment of the present invention;

[0067] Fig.11 A cross-sectional view of an LED light emitting array structure according to an embodiment of the present invention;

[0068] Description of reference numerals:

[0069] 101- growth substrate;

[0070] 102-N type structure;

[0071] 103-Quantum Well;

[0072] 104-P type structure;

[0073] 105- dielectric layer;

[0074] 106 - metal interconnection layer;

[0075] 107- air layer;

[0076] 108-P contact layer;

[0077] 1081-ohmic contact layer;

[0078] 1082-reflector layer;

[0079] 1083-bonding bumps;

[0080] 109-insulating layer;

[0081] 110- passivation insulating layer;

[0082] 201-first temporary substrate;

[0083] 202- a second temporary substrate;

[0084] 301-metal bumps;

[0085] 401 - Metal interconnection line. DETAILED DESCRIPTION

[0086] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0087] In the description of the specification of the present invention, it is necessary to understand that the orientation or position relationship indicated by the terms "upper part", "lower part", "upper end", "lower end", "lower surface", "upper surface", etc. is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0088] In the description of the present specification, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0089] In the description of the present invention, "plurality" means a plurality, such as two, three, four, etc., unless otherwise clearly and specifically defined.

[0090] In the description of the present invention, unless otherwise clearly specified and limited, the term "connection" and other terms should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0091] The technical solution of the present invention is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0092] In one embodiment of the present invention, a method for manufacturing an LED light emitting array structure is provided. Figure 1 , which includes:

[0093] S11: processing a plurality of LED light-emitting units distributed in an array on a surface of the growth substrate 101 .

[0094] The LED light-emitting unit includes an N-type structure 102, a quantum well 103, and a P-type structure 104 which are sequentially distributed along the depth direction, and the N-type structure is close to the growth substrate. Figure 2a .

[0095] S12: Processing metal bumps 301 on the surface of the growth substrate; the metal bumps 301 are located between the LED light-emitting units.

[0096] Practically, the metal bumps may be located between four adjacent LED light-emitting units or between two adjacent LED light-emitting units.

[0097] Please refer to Figure 3 , Figure 3 A metal bump is set between four adjacent LED light-emitting units. When a metal bump is set between the LED light-emitting unit and the LED light-emitting unit adjacent to the left, no metal bump may be set between the LED light-emitting unit adjacent to the right. Figure 3 As shown in the middle part of the first row in FIG. , metal bumps can also be set, such as Figure 3 As shown in the second row; the vertical direction is similar and will not be given an example here.

[0098] In different embodiments, a metal bump may be provided between two adjacent LED light emitting units, such as Figure 4 The principle of setting the position of the metal bumps between two adjacent LED light-emitting units is similar to the principle of setting the position of the metal bumps between four adjacent LED light-emitting units, which will not be repeated here.

[0099] It should be noted that the above S11 and S12 do not represent their order, and S12 can be performed at the same time as S11, or after S11.

[0100] S13: Along the depth direction, a dielectric layer 105 and a metal interconnection layer 106 are sequentially processed on the growth substrate between the N-type structures; wherein the metal interconnection layer is in contact with the metal bumps, please refer to Figure 5 , Figure 6 As shown, Figure 5 For along Figure 3Partial longitudinal section view along the AA direction, Figure 6 For along Figure 4 Partial longitudinal cross-sectional view along the BB direction.

[0101] The metal interconnection layer 106 is used to realize the common cathode between the LED light-emitting units. The design of the metal bumps provides support for the metal interconnection layer between the N-type structures, which is equivalent to reducing the distance between the metal points, thereby making the metal interconnection layer between the metal points more solid and not easy to break.

[0102] Practically, the dielectric layer is a temporary layer, and photoresist, SiO2, etc. may be used.

[0103] In one embodiment, the negative electrode can be led out to the edge of the LED light emitting array through the metal interconnection lines 401 staggeredly distributed on the metal interconnection layer, please refer to Figure 7 , the circle in the figure represents the LED light-emitting unit.

[0104] In another embodiment, in addition to the negative electrode being led out through the staggered metal interconnection lines 401, the metal bumps can be used to lead out the negative electrode. Compared with the lead-out through the edge of the LED light-emitting array, the lead-out through the metal bumps reduces the distance between the lead-out point and each LED light-emitting unit, reduces the voltage drop, and improves the light brightness; in addition, when the LED light-emitting units share a cathode, the distance from the cathode bonding position of the driver chip to the LED light-emitting unit increases from near to far, and due to the effect of the voltage drop, the light brightness will become lower and lower. The voltage drop is reduced by the above method, that is, the difference in light brightness between different LED light-emitting units is reduced, and the light uniformity is improved.

[0105] S14: Remove the dielectric layer 105 and form an air layer 107, please refer to Figure 2c .

[0106] Practically, the dielectric layer 105 may be removed by etching or other methods.

[0107] S15: Process the P contact layer 108 on the side of the P-type structure away from the N-type structure as the positive electrode pad of the LED light-emitting unit, please refer to Figure 2d .

[0108] In practice, along the depth direction of the LED light-emitting unit, the P contact layer includes: an ohmic contact layer 1081, a reflector layer 1082, and a bonding bump 1083 in sequence; the ohmic contact layer 1083 is located on a side close to the P-type structure, please refer to Figure 2d .

[0109] S16: Processing an insulating layer 109 on the metal interconnect layer, please refer to Figure 2e .

[0110] Practically, the thickness of the insulating layer can be slightly higher than that of the P contact layer, and then the surface of the P contact layer is exposed by opening holes in the insulating layer, so that the insulating layer does not cover the surface of the P contact layer.

[0111] In a preferred embodiment, a hole can be opened through the insulating layer to expose the metal bump, that is, the insulating layer does not cover the metal bump, and the negative electrode of the LED light-emitting unit can also be led out through the metal bump.

[0112] In different embodiments, the metal bumps may not leak out, that is, the insulating layer covers the metal bumps. In this case, the negative electrode may be led out through the staggered metal interconnection lines 401 described above.

[0113] S17: Remove the growth substrate 101 and bond the first temporary substrate 110 to the position, please refer to Figure 2f .

[0114] Practically, the growth substrate may be removed by chemical lift-off or laser lift-off.

[0115] In one embodiment, between S15 and S16, the following is also included:

[0116] S21: Bonding a second temporary substrate on the side of the P contact layer away from the P-type structure can stabilize the LED light-emitting unit to ensure the position stability between the LED light-emitting units when the growth substrate is removed. Please refer to Figure 8a .

[0117] Correspondingly, S16 Figure 8b-8c As shown, after S16, it also includes:

[0118] S22: Remove the second temporary substrate, please refer to Figure 8d .

[0119] Practically, the second temporary substrate can be removed by methods such as thermal sliding and dissolving glue.

[0120] In the existing thin-film LED light-emitting unit design, the edges of the N-type structure and the P-type structure are precisely aligned. This alignment method encounters a problem when interconnecting N-type structures, that is, the side walls are too straight. Due to the straight nature of the side walls, the interconnection layer is poorly attached, resulting in reduced stability and reliability of the overall structure. Specifically, when the interconnection layer attempts to cover these straight side walls, the adhesion effect is often unsatisfactory due to the lack of sufficient contact area and adhesion. This poor and unstable adhesion effect may lead to poor current transmission, which in turn affects the overall performance and life of the thin-film LED light-emitting unit. Therefore, in order to improve the reliability and stability of the thin-film LED light-emitting unit, it is necessary to improve the existing structural design to ensure that the interconnection layer can better adhere to the side walls of the N-type structure.

[0121] In view of this, in a preferred embodiment of the present invention, a first step structure is formed between the sidewall of the N-type structure and the sidewall of the quantum well, please refer to Figure 2a The depth of the metal interconnection layer 106 at least covers the first step structure. Figure 2b , the connection at the steps is more firm and not easy to fall off.

[0122] In one embodiment, the surface edge of the N-type structure 102 is not covered by the quantum well 103. The metal interconnect layer also covers a portion of the surface of the N-type structure, where the portion of the surface refers to the surface of the N-type structure that is adjacent to the quantum well and not covered by the quantum well. Figure 2b The metal interconnect layer is deposited more securely on the surface.

[0123] In a preferred embodiment, the sidewall of the N-type structure includes at least a second step structure, and the depth of the metal interconnect layer 106 also covers the second step structure. Fig. 9 .

[0124] In one embodiment, after S16, the method further includes:

[0125] S41: bonding the LED light emitting unit to the driver chip;

[0126] S42: removing the first temporary substrate.

[0127] Practically, the first temporary substrate can be removed by methods such as thermal sliding and dissolving glue.

[0128] In one embodiment, between S11 and S12, the process further includes: depositing a passivation insulating layer on the sidewalls of the quantum well and the P-type structure, so as to strengthen the insulation between the positive electrode and the negative electrode of the LED light-emitting unit.

[0129] In one embodiment, a LED light emitting array structure is also provided, please refer to Fig.10 , which includes:

[0130] A first temporary substrate 201;

[0131] A plurality of array-distributed LED light-emitting units are located on a surface of a first temporary substrate 201; along the depth direction of the LED light-emitting unit, the LED light-emitting unit sequentially comprises: an N-type structure 102, a quantum well 103, a P-type structure 104, and a P contact layer 108; the N-type structure 102 is located on a side close to the first temporary substrate 201; the P contact layer 108 is used to lead out the positive electrode of the LED light-emitting unit; metal bumps 301 are included between the LED light-emitting units, please refer to Figure 3 , Figure 4 ;The metal bumps are located on the surface of the temporary substrate;

[0132] An air bridge is connected between the N-type structures; along the depth direction of the LED light-emitting unit, the air bridge includes a metal interconnection layer 106 and an air layer 107 in sequence, and the air layer 107 is located between the metal interconnection layer 106 and the first temporary substrate 201; the metal interconnection layer 106 is in contact with the metal bump; the metal interconnection layer 106 is used to connect the negative electrodes of the LED light-emitting units to realize a common cathode;

[0133] The insulating layer 109 covers a side of the metal interconnection layer 106 away from the first temporary substrate 201 . The insulating layer 109 does not cover the surface of the P-contact layer.

[0134] The metal bump 301 is described in detail below:

[0135] The metal bumps may be arranged between four adjacent LED light-emitting units or between two adjacent LED light-emitting units.

[0136] Figure 3 A metal bump is set between four adjacent LED light-emitting units. When a metal bump is set between the LED light-emitting unit and the LED light-emitting unit adjacent to the left, no metal bump may be set between the LED light-emitting unit adjacent to the right. Figure 3 As shown in the middle part of the first row in FIG. , metal bumps can also be set, such as Figure 3 As shown in the second row; the vertical direction is similar and will not be given an example here.

[0137] In different embodiments, a metal bump may be provided between two adjacent LED light emitting units, such as Figure 4 The principle of setting the position of the metal bumps between two adjacent LED light-emitting units is similar to the principle of setting the position of the metal bumps between four adjacent LED light-emitting units, which will not be repeated here.

[0138] Preferably, the insulating layer does not cover the metal bumps, and the metal bumps can be used to lead out the negative electrode of the LED light-emitting unit.

[0139] In different embodiments, the insulating layer may also cover the metal bumps.

[0140] In a preferred embodiment, a first step structure is formed between the sidewall of the N-type structure and the sidewall of the P-type structure, and the depth of the metal interconnect layer 106 covers the first step structure. Fig.10 .

[0141] In one embodiment, the surface edge of the N-type structure 102 is not covered by the quantum well 103; the metal interconnect layer also covers a portion of the surface of the N-type structure, where the portion of the surface refers to the surface of the N-type structure that is adjacent to the quantum well and not covered by the quantum well, see Fig.10 .

[0142] In a preferred embodiment, the sidewall of the N-type structure has at least one second step structure; the depth of the metal interconnect layer also covers the second step structure, please refer to Fig. 9 The depth of the metal interconnection layer covers the first step structure and the second step structure, and the connection with the N-type structure is more solid.

[0143] In a preferred embodiment, along the depth direction of the LED light-emitting unit, the P contact layer includes: an ohmic contact layer 1081, a reflector layer 1082, and a bonding bump 1083; the ohmic contact layer 1081 is located on the side close to the P-type structure. The reflector layer is provided in the P contact layer, and the light emitted toward the back side can be reflected back to the front side, which reduces the waste of light and further improves the light brightness.

[0144] In a preferred embodiment, the LED array structure further includes: a passivation insulating layer 110, which at least wraps the sidewalls of the quantum well and the P-type structure, see Fig.11 , which can strengthen the insulation between the positive electrode and the negative electrode of the LED light-emitting unit; in addition, after the side wall of the P-type structure is insulated by the passivation insulating layer, the depth of the metal interconnection layer can be set deeper and extend to the side wall of the P-type structure, further enhancing the firmness of the metal interconnection layer.

[0145] In one embodiment, a light-emitting module is further provided, comprising: an LED light-emitting array structure and a driver chip; wherein the driver chip is bonded to the LED light-emitting array structure and is used to drive the LED light-emitting array structure. The LED light-emitting array structure is the LED light-emitting array structure described in any of the above embodiments, and after it is bonded to the driver chip, the first temporary substrate can be removed, and the light-emitting effect and heat dissipation effect of the light-emitting surface of the LED light-emitting array are better.

[0146] Specifically, the LED light emitting array structure includes:

[0147] A plurality of array-distributed LED light-emitting units; along the depth direction of the LED light-emitting units, the LED light-emitting units sequentially include: an N-type structure, a quantum well, a P-type structure, and a P contact layer; the N-type structure 102 is located on a side close to the first temporary substrate 201; the P contact layer 108 is used to lead out the positive electrode of the LED light-emitting unit; metal bumps 301 are included between the LED light-emitting units, and the metal bumps are located on the surface of the temporary substrate;

[0148] An air bridge is connected between the N-type structures; along the depth direction of the LED light-emitting unit, the air bridge includes a metal interconnection layer and an air layer in sequence; along the depth direction of the LED light-emitting unit, the air layer is located on the side of the metal interconnection layer away from the quantum well; the metal interconnection layer is in contact with the metal bump; the metal interconnection layer is used to connect the negative electrodes of the LED light-emitting units to achieve a common cathode;

[0149] The insulating layer covers the side of the metal interconnection layer away from the air layer.

[0150] In the description of this specification, the description with reference to the terms "an implementation", "an example", "a specific implementation process", "an example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0151] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for manufacturing an LED light emitting array, characterized in that: include: Processing a plurality of array-distributed LED light-emitting units on a surface of a growth substrate; wherein the LED light-emitting unit comprises an N-type structure, a quantum well, and a P-type structure distributed in sequence along a depth direction, and the N-type structure is close to the growth substrate; Processing metal bumps on the surface of the growth substrate; the metal bumps are located between the LED light-emitting units; In the depth direction, a dielectric layer and a metal interconnect layer are sequentially processed on the growth substrate between the N-type structures; wherein the metal interconnect layer is in contact with the metal bumps; removing the dielectric layer to form an air layer; Processing a P contact layer on a side of the P-type structure away from the N-type structure; Processing an insulating layer on the metal interconnect layer, wherein the insulating layer does not cover the surface of the P contact layer; The growth substrate is removed and a first temporary substrate is bonded in its place.

2. The method according to claim 1, characterized in that: Between processing the insulating layer on the metal interconnect layer and removing the growth substrate, the method further includes: Bonding a second temporary substrate on a side of the P contact layer away from the P-type structure; Correspondingly, the removing of the growth substrate, after bonding the first temporary substrate at the position, further comprises: The second temporary substrate is removed.

3. The method according to claim 1, characterized in that: The removing of the growth substrate and bonding the first temporary substrate at the position thereof further comprises: Bonding the LED light-emitting unit to the driver chip; The first temporary substrate is removed.

4. The production method according to any one of claims 1 to 3, characterized in that: In a plurality of LED light-emitting units distributed in an array are processed on a surface of a growth substrate, a first step structure is formed between the side wall of the N-type structure and the side wall of the quantum well; Correspondingly, along the depth direction, a dielectric layer and a metal interconnection layer are sequentially processed on the growth substrate between the N-type structures, and the depth of the metal interconnection layer at least covers the first step structure.

5. An LED light-emitting array structure, characterized in that: include: Temporary substrate; A plurality of LED light-emitting units distributed in an array, which are located on a surface of the temporary substrate; Along the depth direction of the LED light-emitting unit, the LED light-emitting unit includes: an N-type structure, a quantum well, a P-type structure, and a P contact layer in sequence; the N-type structure is located at a side well close to the temporary substrate; the P contact layer is used to lead out the positive electrode of the LED light-emitting unit; A metal bump, which is disposed on a surface of the temporary substrate and is located between two or four adjacent LED light-emitting units; An air bridge connected between the N-type structures; along the depth direction of the LED light-emitting unit, the air bridge comprises a metal interconnection layer and an air layer in sequence, the air layer is located between the metal interconnection layer and the temporary substrate; the metal bump is in contact with the metal interconnection layer; the metal interconnection layer is used to realize a common cathode between the LED light-emitting units; An insulating layer covers a side of the metal interconnection layer away from the temporary substrate.

6. The LED light emitting array structure according to claim 5, characterized in that: The insulating layer does not cover the metal bump, and the metal bump is used to lead out the negative electrode of the LED light-emitting unit.

7. The LED light emitting array structure according to claim 5, characterized in that: A first stepped structure is formed between the sidewall of the N-type structure and the sidewall of the quantum well; The depth of the metal interconnection layer at least covers the first stepped structure.

8. The LED light emitting array structure according to claim 7, characterized in that: The surface edge of the N-type structure is not covered by the quantum well; The metal interconnection layer also covers a portion of the surface of the N-type structure, where the portion of the surface refers to a surface of the N-type structure that is adjacent to the quantum well and not covered by the quantum well.

9. The LED light emitting array structure according to any one of claims 5 to 8, characterized in that: The sidewall of the N-type structure has at least one second step structure; the depth of the metal interconnection layer covers the second step structure.

10. The LED light emitting array structure according to claim 5, characterized in that: Along the depth direction of the LED light-emitting unit, the P contact layer includes: an ohmic contact layer, a reflector layer, and bonding bumps in sequence; the ohmic contact layer is located on a side close to the P-type structure.

11. A light emitting module, characterized in that: include: LED light-emitting array structure and driver chip; Wherein, the LED light emitting array structure comprises: A plurality of LED light-emitting units distributed in an array; along the depth direction of the LED light-emitting unit, the LED light-emitting unit sequentially comprises: an N-type structure, a quantum well, a P-type structure, and a P contact layer; the P contact layer is used to lead out the positive electrode of the LED light-emitting unit; A metal bump, which is disposed on a surface of the temporary substrate and is located between the LED light-emitting units; An air bridge connected between the N-type structures; along the depth direction of the LED light-emitting unit, the air bridge comprises a metal interconnection layer and an air layer in sequence; along the depth direction of the LED light-emitting unit, the air layer is located on a side of the metal interconnection layer away from the quantum well; the metal bump is in contact with the metal interconnection layer; the metal interconnection layer is used to realize a common cathode between the LED light-emitting units; an insulating layer covering a side of the metal interconnect layer away from the air layer; The driving chip is bonded to the LED light emitting array structure.

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