Photoelectric conversion device and flying object

Abstract

A photoelectric conversion device (112) is provided with: a photoelectric conversion element (240) that converts light energy of incident light into electric energy; a first wavelength conversion layer (234) disposed in contact with the light receiving surface (242) of the photoelectric conversion element (240); and a second wavelength conversion layer (232) disposed on the surface side of the first wavelength conversion layer (234) opposite to the surface in contact with the photoelectric conversion element (240). The first wavelength converting layer (234) includes a first wavelength converting material (274) that converts a wavelength of light of the first wavelength region. The second wavelength conversion layer (232) includes a second wavelength conversion material (272) that converts a wavelength of light of a second wavelength region. The upper limit value of the first wavelength region is different from the upper limit value of the second wavelength region and / or the lower limit value of the first wavelength region is different from the lower limit value of the second wavelength region.

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion device and a flying object. Background Art

[0002] Patent Documents 1 to 8 disclose a solar cell including a wavelength conversion layer containing a single or a plurality of wavelength conversion substances.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 07-142752

[0006] Patent Document 2: Japanese Patent Application Publication No. 2016-145295

[0007] Patent Document 3: Japanese Patent Application Publication No. 2019-215451

[0008] Patent Document 4: Japanese Patent Application Publication No. 2019-050381

[0009] Patent Document 5: Japanese Patent Application Publication No. 2022-056319

[0010] Patent Document 6: Japanese Patent Application Publication No. 2013-069728

[0011] Patent Document 7: Japanese Patent Application Publication No. 2013-123037

[0012] Patent Document 8: Japanese Patent Application Publication No. 2012-142346

[0013] When a solar cell is set in an environment of air mass (sometimes abbreviated as AM) 0 such as the stratosphere or the outer atmosphere, the amount of light in the ultraviolet region incident on the solar cell increases compared to a case where the solar cell is set on the ground (for example, in an environment of AM1 or AM1.5). When a solar cell is used in an environment of AM0, it is desirable to effectively utilize light in the ultraviolet region. In particular, when a solar cell is mounted on an aircraft flying in the stratosphere, it is desirable to develop a solar cell that is lightweight and has excellent power generation efficiency. Summary of the invention

[0014] In a first aspect of the present invention, a photoelectric conversion device is provided. The photoelectric conversion device, for example, includes a photoelectric conversion element that converts the light energy of incident light into electrical energy. The photoelectric conversion device, for example, includes a first wavelength conversion layer that is configured to contact the light receiving surface of the photoelectric conversion element. The photoelectric conversion device, for example, includes a second wavelength conversion layer that is configured on the surface side of the first wavelength conversion layer opposite to the surface that contacts the photoelectric conversion element. In the photoelectric conversion device, the first wavelength conversion layer, for example, includes a first wavelength conversion material that converts the wavelength of light in a first wavelength region. In the photoelectric conversion device, the second wavelength conversion layer, for example, includes a second wavelength conversion material that converts the wavelength of light in a second wavelength region. In the photoelectric conversion device, for example, the upper limit value of the first wavelength region is different from the upper limit value of the second wavelength region and / or the lower limit value of the first wavelength region is different from the lower limit value of the second wavelength region.

[0015] In any of the above-mentioned photoelectric conversion devices, the first wavelength region may include a third wavelength region included in the range of 100 nm to 400 nm. In any of the above-mentioned photoelectric conversion devices, the second wavelength region includes a fourth wavelength region included in the range of 100 nm to 400 nm. In any of the above-mentioned photoelectric conversion devices, for example, the upper limit value of the third wavelength region is different from the upper limit value of the fourth wavelength region and / or the lower limit value of the third wavelength region is different from the lower limit value of the fourth wavelength region.

[0016] In any of the above-mentioned photoelectric conversion devices, the first wavelength conversion layer may include a first resin and a first wavelength conversion material. In any of the above-mentioned photoelectric conversion devices, the second wavelength conversion layer may include a second resin and a second wavelength conversion material. In any of the above-mentioned photoelectric conversion devices, the types and / or compositions of the first resin and the second resin may be different. In any of the above-mentioned photoelectric conversion devices, the first wavelength conversion layer may have a greater refractive index than the second wavelength conversion layer.

[0017] In any of the above-mentioned photoelectric conversion devices, the first resin may be at least one selected from ethylene-vinyl acetate copolymer resin (EVA), polyolefin elastomer (POE), silicone resin (SI) and ionomer resin. In any of the above-mentioned photoelectric conversion devices, the second resin may be at least one selected from the group consisting of polyethylene (PE), ultra-high molecular weight polyethylene (U-PE), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), fluorine-based resin, polyimide (PI), unsaturated polyester (UP), epoxy resin (EP) and silicone resin (SI).

[0018] In any of the above-mentioned photoelectric conversion devices, the first wavelength conversion layer may be arranged to cover at least a portion of a light receiving surface of the photoelectric conversion element and a side surface of the photoelectric conversion element. In any of the above-mentioned photoelectric conversion devices, the first wavelength conversion layer may have a thickness of 20 μm or more and 100 μm or less.

[0019] In any of the above-mentioned photoelectric conversion devices, the first wavelength conversion layer may have a thickness of less than 10 μm. In any of the above-mentioned photoelectric conversion devices, the second wavelength conversion layer may be configured to cover the first wavelength conversion layer configured on the light-receiving surface of the photoelectric conversion element, and at least a portion of the side surface of the photoelectric conversion element. In any of the above-mentioned photoelectric conversion devices, the photoelectric conversion device may include an intermediate layer configured between the first wavelength conversion layer and the second wavelength conversion layer. The intermediate layer may be configured to cover the first wavelength conversion layer configured on the light-receiving surface of the photoelectric conversion element, and at least a portion of the side surface of the photoelectric conversion element.

[0020] In any of the above-mentioned photoelectric conversion devices, the second wavelength conversion layer may have a thickness of 20 μm or more and 50 μm or less. In any of the above-mentioned photoelectric conversion devices, the transmittance of the first wavelength conversion layer to light of 200 nm to 450 nm may be 80% or more. In any of the above-mentioned photoelectric conversion devices, the transmittance of the second wavelength conversion layer to light of 200 nm to 450 nm may be 90% or more.

[0021] In any of the above-mentioned photoelectric conversion devices, the first wavelength conversion material may include an organic phosphor. In any of the above-mentioned photoelectric conversion devices, the second wavelength conversion material may include an inorganic phosphor.

[0022] In any of the above-mentioned photoelectric conversion devices, the first wavelength conversion layer may include an absorption layer, which is arranged in contact with the light receiving surface of the photoelectric conversion element and contains a UV absorbing material. The first wavelength conversion layer may include a conversion layer, which is arranged on the surface side of the UV absorbing layer opposite to the surface in contact with the photoelectric conversion element and contains a first wavelength conversion material.

[0023] In a second aspect of the present invention, there is provided a flying object. The flying object includes, for example, any of the photoelectric conversion devices according to the first aspect. The flying object includes, for example, a propulsion generating device that generates propulsion using electrical energy generated by the photoelectric conversion device.

[0024] In addition, the above summary of the invention does not list all the essential features of the present invention. In addition, sub-combinations of these feature groups may also constitute inventions. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 An example of the system configuration of the flying object 100 is schematically shown.

[0026] Figure 2 An example of the internal structure of the solar power generation module 112 is schematically shown.

[0027] Figure 3 An example of the internal structure of the solar power generation module 312 is schematically shown.

[0028] Figure 4 Another example of the internal structure of the solar power generation module 312 is schematically shown.

[0029] Figure 5 An example of the internal structure of the solar power generation module 512 is schematically shown.

[0030] Figure 6 Another example of the internal structure of the solar power generation module 512 is schematically shown.

[0031] Figure 7 An example of the internal structure of the solar power generation module 712 is schematically shown.

[0032] Figure 8 An example of the internal structure of the solar power generation module 812 is schematically shown.

[0033] Fig. 9 An example of the internal structure of the solar power generation module 912 is schematically shown.

[0034] Fig.10 An example of the internal structure of the solar power generation module 1012 is schematically shown. DETAILED DESCRIPTION

[0035] According to the embodiment disclosed by way of example in this specification, the photoelectric conversion device comprises: a photoelectric conversion element that converts the light energy of incident light into electric energy; a first wavelength conversion layer that is arranged in contact with the light receiving surface of the photoelectric conversion element; and a second wavelength conversion layer that is arranged on the surface side of the first wavelength conversion layer opposite to the surface in contact with the photoelectric conversion element. The first wavelength conversion layer includes a first wavelength conversion material that converts the wavelength of light in a first wavelength region. The second wavelength conversion layer includes a second wavelength conversion material that converts the wavelength of light in a second wavelength region.

[0036] In this embodiment, the numerical range of the first wavelength region and the numerical range of the second wavelength region are different from each other. (i) The numerical range of the first wavelength region and the numerical range of the second wavelength region may be completely separated, (ii) A part of the numerical range of the first wavelength region and a part of the numerical range of the second wavelength region may overlap, (iii) The numerical range of the first wavelength region may be included in the numerical range of the second wavelength region, and (iv) The numerical range of the second wavelength region may be included in the numerical range of the first wavelength region.

[0037] In one embodiment, the upper limit value of the first wavelength region is different from the upper limit value of the second wavelength region. The upper limit value of the first wavelength region may be greater than the upper limit value of the second wavelength region. The upper limit value of the first wavelength region may also be less than the upper limit value of the second wavelength region. In other embodiments, the lower limit value of the first wavelength region is different from the lower limit value of the second wavelength region. The lower limit value of the first wavelength region may be greater than the lower limit value of the second wavelength region. The lower limit value of the first wavelength region may be less than the lower limit value of the second wavelength region.

[0038] The first wavelength conversion material and the second wavelength conversion material can convert the wavelength of light by, for example, utilizing nonlinear optical effects, up-conversion phenomena, down-conversion phenomena, etc. A substance that converts the wavelength of light by utilizing the up-conversion phenomenon (sometimes referred to as an up-conversion substance) is, for example, excited by light or electromagnetic waves of a specific wavelength and emits light of a wavelength shorter than the wavelength of the light or electromagnetic waves (sometimes referred to as luminescence, emission of light, etc.). A substance that converts the wavelength of light by utilizing the down-conversion phenomenon (sometimes referred to as a down-conversion substance) is, for example, excited by light or electromagnetic waves of a specific wavelength and emits light of a wavelength longer than the wavelength of the light or electromagnetic waves (sometimes referred to as conversion to the long wavelength side).

[0039] The first wavelength conversion material is excited by light of a first wavelength region or absorbs light of the first wavelength region to emit fluorescence, for example. The second wavelength conversion material is excited by light of a second wavelength region or absorbs light of the second wavelength region to emit fluorescence, for example.

[0040] Photoelectric conversion elements convert the light energy of light incident on the photoelectric conversion element (sometimes referred to as input light) into electrical energy, for example, by utilizing the photovoltaic effect. The conversion efficiency of the photoelectric conversion element depends on the wavelength of the input light. For example, in the case of silicon-based photoelectric conversion elements, light in the wavelength range of visible light to near infrared light can be converted relatively efficiently, but light in the wavelength range corresponding to ultraviolet light cannot be converted efficiently.

[0041] According to this embodiment, light incident on the photoelectric conversion device (sometimes referred to as incident light) first enters the second wavelength conversion layer. The wavelength of at least a portion of the light incident on the second wavelength conversion layer is converted by the action of the second wavelength conversion material contained in the second wavelength conversion layer.

[0042] The second wavelength conversion material, for example, converts the wavelength of light having a wavelength of 100 nm to 400 nm. The second wavelength conversion material, for example, is excited by light having a wavelength of 100 nm to 400 nm (sometimes referred to as excitation light) to emit fluorescence having a wavelength longer than the excitation light. Thus, for example, ultraviolet rays contained in the incident light are converted into light having a wavelength longer than the ultraviolet rays. As a result, the progress of degradation of at least one of the photoelectric conversion element, the first wavelength conversion layer, and the first wavelength conversion material is suppressed. In addition, the conversion efficiency of the photoelectric conversion element can be improved.

[0043] The second wavelength conversion material can convert the wavelength of light having a wavelength longer than the wavelength converted by the first wavelength conversion material. In this case, the first wavelength region and the second wavelength region may include at least a portion of the wavelength region corresponding to ultraviolet rays (sometimes referred to as the ultraviolet light region). As ultraviolet light regions, UV-A (315 to 400 nm), UV-B (280 to 315 nm), UV-C (100 to 280 nm), etc. can be exemplified. The first wavelength conversion material and the second wavelength conversion material can be down-conversion substances. Thus, the degradation of the photoelectric conversion element caused by the ultraviolet rays contained in the incident light is suppressed.

[0044] In an environment at AM0, the amount of UV-C light is greater than that in an environment on the ground. Therefore, at least one of the first wavelength region and the second wavelength region may include at least a portion of the wavelength region corresponding to UV-C. Thus, a photoelectric conversion device particularly suitable for use in an aircraft flying in an environment at AM0 is provided.

[0045] The second wavelength conversion material may also convert the wavelength of light having a wavelength shorter than the wavelength converted by the first wavelength conversion material. In one embodiment, the second wavelength region may include at least a portion of the ultraviolet region. In other embodiments, the first wavelength region and the second wavelength region may include at least a portion of the ultraviolet region. In these embodiments, the second wavelength region may include at least a portion of the wavelength region corresponding to UV-C. Thus, a photoelectric conversion device is provided that is particularly suitable for use in a flying object that is set to fly in an environment of AM0.

[0046] The second wavelength conversion material may be a down-conversion material. The first wavelength conversion material and the second wavelength conversion material may also be down-conversion materials. As described above, according to the present embodiment, the light incident on the photoelectric conversion device is incident on the second wavelength conversion layer, the first wavelength conversion layer, and the photoelectric conversion element in the order of the second wavelength conversion layer. The second wavelength conversion material included in the second wavelength conversion layer converts the wavelength of the light in the second wavelength region to the long wavelength side, thereby suppressing not only the degradation of the photoelectric conversion element caused by ultraviolet rays, but also the degradation of the first wavelength conversion material caused by ultraviolet rays.

[0047] In one embodiment, the second wavelength conversion material emits light of a wavelength with which the conversion efficiency of the photoelectric conversion element is relatively good. For example, the second wavelength conversion material emits light having a wavelength of more than 400nm. Thus, the conversion efficiency of the photoelectric conversion device is improved. In other embodiments, the second wavelength conversion material emits light in the first wavelength region. In this case, the photoelectric conversion device can be configured such that the light emitted by the second wavelength conversion material is incident on the photoelectric conversion element after the wavelength is converted by the first wavelength conversion material. In addition, in this case, the light in the first wavelength region may also include light having a wavelength of more than 400nm. Thus, the conversion efficiency of the photoelectric conversion device is improved.

[0048] Next, the light transmitted through the second wavelength conversion layer passes through the first wavelength conversion layer and enters the photoelectric conversion element. At this time, the wavelength of at least a portion of the light incident on the first wavelength conversion layer is converted by the action of the first wavelength conversion material contained in the first wavelength conversion layer.

[0049] The light incident on the first wavelength conversion layer includes (i) incident light that is not converted in wavelength by the second wavelength conversion material and passes through the second wavelength conversion layer, and (ii) light emitted by the second wavelength conversion material. The first wavelength conversion material may convert the wavelength of the incident light, the wavelength of the light emitted by the second wavelength conversion material, or both.

[0050] The first wavelength conversion material converts the wavelength of light having a wavelength of 100 nm to 400 nm, for example. The first wavelength conversion material is excited by light having a wavelength of 100 nm to 400 nm (sometimes referred to as excitation light) to emit fluorescence having a wavelength longer than the excitation light. Thus, ultraviolet rays contained in the light incident on the first wavelength conversion layer are converted into light having a wavelength longer than the ultraviolet rays. Thus, the progress of degradation of at least one of the photoelectric conversion element, the first wavelength conversion layer, and the first wavelength conversion material is suppressed.

[0051] The first wavelength conversion material emits light of a wavelength with relatively good conversion efficiency of the photoelectric conversion element, for example. Thus, the conversion efficiency of the photoelectric conversion element can be improved.

[0052] According to this embodiment, for example, light in a wavelength region where the conversion efficiency of the photoelectric conversion element is relatively low is converted into light in a wavelength region where the conversion efficiency of the photoelectric conversion element is relatively high through the first wavelength conversion layer and the second wavelength conversion layer. Thus, the photoelectric conversion device involved in this embodiment can effectively convert the light energy of the light incident on the photoelectric conversion device into electrical energy. As a result, the power generation per unit mass of the photoelectric conversion device is improved. In particular, in the stratospheric environment, the amount of ultraviolet rays is large compared to the ground. Therefore, by mounting the photoelectric conversion device involved in this embodiment on a flying object flying in the stratosphere, the flying distance, flying time and / or flying latitude range of the flying object are increased.

[0053] When all wavelength conversion materials included in the photoelectric conversion device are added to a single layer, the light transmittance of the single layer may be reduced. As a result, the effect of wavelength conversion of light generated by the wavelength conversion material may also be reduced. In contrast, according to this embodiment, two or more wavelength conversion materials with different conversion characteristics and / or compositions are arranged in physically different layers. As a result, the effect of wavelength conversion materials converting the wavelength of light can be fully exerted.

[0054] In addition, by using two or more wavelength conversion materials, it is possible to convert the wavelength of a wider range of light compared to the case of using a single type of wavelength conversion material. For example, the proportion of light in the ultraviolet region contained in the incident light that is converted into light in the visible light region increases. As a result, the power generation efficiency of the photoelectric conversion device is improved, and the power generation per unit mass is increased. Therefore, by mounting the photoelectric conversion device involved in this embodiment on an aircraft flying in the stratosphere, the flight distance, flight time, and flight range (for example, the range of latitude) of the aircraft are improved.

[0055] In the past, solar cells placed on the ground had an encapsulation layer that protects the solar cell unit from oxygen and moisture, and a surface protection layer that protects the encapsulation layer from the external environment. Generally speaking, the encapsulation layer has a thickness of several hundred μm, and the surface protection layer has a thickness of several mm. In contrast, according to the present embodiment, the second wavelength conversion layer has a thickness of, for example, 20 μm or more and 50 μm or less. In addition, the first wavelength conversion layer has a thickness of, for example, 20 μm or more and 100 μm or less or a thickness of less than 0.1 μm. Thus, for example, 500 g / m 2 Therefore, by mounting the photoelectric conversion device according to the present embodiment on an aircraft flying in the stratosphere, the flight distance and / or flight time of the aircraft can be increased.

[0056] According to the photoelectric conversion device involved in this embodiment, for example, a solar power generation device with excellent power generation efficiency per unit mass can be realized. Solar power generation devices are known as a power generation method with low carbon dioxide emissions. In addition, solar power generation devices are brought to disaster sites, for example, to supply energy to disaster victims. Therefore, the photoelectric conversion device involved in this embodiment contributes to the achievement of Goal 7 of the Sustainable Development Goals (SDGs) "Access to affordable and clean energy for all" or Goal 13 "Take concrete actions to address climate change".

[0057] Hereinafter, the present invention will be described by way of the embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, the combination of features described in the embodiments is not necessarily all essential to the solution means of the invention.

[0058] In this specification, when a numerical range is expressed as "A to B", this expression means more than A and less than B. In addition, "substituted or unsubstituted" means "substituted by any substituent or not substituted by a substituent". The type of the above substituent is not particularly limited unless it is mentioned in the specification. In addition, the number of the above substituent is not particularly limited unless it is mentioned in the specification.

[0059] (Overview of flying object 100)

[0060] Figure 1 An example of a system configuration of an aircraft 100 is schematically shown. In the present embodiment, the aircraft 100 includes a power generation system 110, a power control circuit 120, a power storage device 122, one or more motors 130, one or more thrusters 140, one or more sensors 150, and a control device 160. In the present embodiment, the power generation system 110 includes one or more solar power generation modules 112.

[0061] In this embodiment, the flying object 100 flies using the electric energy generated by the power generation system 110. In this embodiment, the electric energy generated by the power generation system 110 can be stored in the power storage device 122. The flying object 100 can also fly using the electric energy stored in the power storage device 122. Examples of the flying object 100 include an airplane, a spacecraft, a balloon, a helicopter, and a drone.

[0062] In the present embodiment, the power generation system 110 generates electric power and supplies electric power to the power storage device 122 and / or the electric motor 130 via the electric power control circuit 120 .

[0063] In the present embodiment, the solar power generation module 112 generates electric power by converting light energy of light incident on the solar power generation module 112 into electric energy. The details of the solar power generation module 112 will be described later.

[0064] In the present embodiment, the power storage device 122 stores electric energy (sometimes referred to as charging the power storage device 122). For example, the power storage device 122 stores electric energy generated by the power generation system 110. In addition, the power storage device 122 releases the stored electric energy (sometimes referred to as discharging the power storage device 122). For example, the power storage device 122 supplies electric power to the motor 130. The power storage device 122 may include a secondary battery.

[0065] In the present embodiment, the power control circuit 120 controls the output of the power generated by the power generation system 110. The power control circuit 120 may also control the input and output of the power of the power storage device 122. In one embodiment, the power control circuit 120 supplies the power generated by the power generation system 110 to the power storage device 122 and / or the motor 130. In other embodiments, the power control circuit 120 supplies the power stored in the power storage device 122 to the motor 130. The power control circuit 120 may control the input and / or output of the above-mentioned power based on a command from the control device 160. The power control circuit 120, for example, includes one or more switching elements that operate based on a control signal from the control device 160. The power control circuit 120 may also include one or more power conversion devices that operate based on a control signal from the control device 160.

[0066] In this embodiment, the motor 130 receives electric energy from the power generation system 110 and / or the power storage device 122 via the power control circuit 120. The motor 130 rotates the propeller 140 using the electric energy received from the power generation system 110 and / or the power storage device 122. Thus, the motor 130 can generate propulsion force for the flying object 100 using the electric energy generated by the power generation system 110.

[0067] In the present embodiment, the sensor 150 measures various physical quantities related to the position and posture of the flying object 100. Examples of sensors for measuring various physical quantities related to the position and posture of the flying object 100 include a GPS signal receiver, an acceleration sensor, an angular acceleration sensor, a gyro sensor, etc. The sensor 150 can measure various physical quantities related to the state of the power generation system 110 and / or the power storage device 122. Examples of sensors for measuring various physical quantities related to the state of the power generation system 110 and / or the power storage device 122 include a temperature sensor, a current sensor, a voltage sensor, etc.

[0068] In the present embodiment, the control device 160 controls the flying object 100. The control device 160 can control the power output of the power generation system 110 by controlling the power control circuit 120. For example, the control device 160 controls the output power, output current, output voltage, etc. of the power generation system 110. The control device 160 can control the input and output of power of the power storage device 122 by controlling the power control circuit 120. For example, the control device 160 controls the output power, output current, output voltage, input power, input current, input voltage, etc. of the power storage device 122. Thus, the control device 160 can control the position and posture of the flying object 100. The control device 160 can control the power control circuit 120 based on the output from the sensor 150, thereby controlling the position and posture of the flying object 100.

[0069] The power generation system 110 may be an example of a photoelectric conversion device. The solar power generation module 112 may be an example of a photoelectric conversion device. The motor 130 may be an example of a propulsion force generation device.

[0070] (Overview of Solar Power Generation Module 112)

[0071] Figure 2 An example of the internal structure of the solar power generation module 112 is schematically shown. In the present embodiment, the solar power generation module 112 has, for example, a surface 222 and a back surface 224. In the present embodiment, the solar power generation module 112 has, for example, a surface protection layer 232, a sealing layer 234, a back surface protection layer 236, and a photoelectric conversion unit 240. In the present embodiment, the photoelectric conversion unit 240 has, for example, a surface 242, a back surface 244, and a side surface 246 connecting the surface 242 and the back surface 244. In the present embodiment, the photoelectric conversion unit 240 has, for example, an n-type semiconductor layer 252, a p-type semiconductor layer 254, a light-receiving surface electrode 256, a back surface electrode 258, a positive terminal 262, and a negative terminal 264.

[0072] In this embodiment, the surface protection layer 232 includes a wavelength conversion material 272. The surface protection layer 232 may be a film or coating composed of the wavelength conversion material 272, or may be a film or coating including the wavelength conversion material 272 and a resin material.

[0073] In this embodiment, the sealing layer 234 includes a wavelength conversion material 274. The sealing layer 234 may be a film or coating composed of the wavelength conversion material 274, or may be a film or coating containing the wavelength conversion material 274 and a resin material.

[0074] In this embodiment, the surface protection layer 232 protects the sealing layer 234 from the external environment. The surface protection layer 232 protects the sealing layer 234 from oxygen, for example. The surface protection layer 232 protects the sealing layer 234 from temperature changes or low temperatures, for example. The surface protection layer 232 protects the sealing layer 234 from impacts caused by changes in air pressure, wind pressure, etc.

[0075] In this embodiment, the surface protection layer 232 is disposed on the surface (the upper surface in the figure) opposite to the surface (the lower surface in the figure) of the sealing layer 234 that contacts the photoelectric conversion unit 240, of the two surfaces of the sealing layer 234. The two surfaces of the sealing layer 234 may be surfaces that are substantially perpendicular to the thickness direction of the sealing layer 234.

[0076] More specifically, the surface protection layer 232 is disposed on the side closer to the light incident side than the sealing layer 234. In one embodiment, the surface protection layer 232 is disposed in contact with the surface of the sealing layer 234 on the side on which the light is incident. In other embodiments, other layers may be interposed between the surface protection layer 232 and the sealing layer 234. Thus, according to this embodiment, light is incident on the surface protection layer 232 and the sealing layer 234 in this order.

[0077] The thickness of the surface protection layer 232 may be greater than 20 μm and less than 200 μm. The thickness of the surface protection layer 232 is preferably greater than 20 μm and less than 50 μm. As a result, the mass of the solar power generation module 112 is reduced. The thickness of the surface protection layer 232 may be determined as 500 g / m 2 The thickness of the surface protection layer 232 can be determined as follows: The mass of the surface protection layer 232 and the sealing layer 234 is 800 g / m 2 The thickness of the surface protection layer 232 can be determined as follows: The mass of the solar power generation module 112 is 1200 g / m 2 The thickness of the surface protection layer 232 can also be determined as follows: The mass of the solar power generation module 112 is 500 g / m 2 The mass of the solar power generation module 112 may be the mass per unit installation area of ​​the solar power generation module 112 or the mass per unit area of ​​the solar power generation panel.

[0078] (Composition of Surface Protection Layer 232)

[0079] In this embodiment, the surface protection layer 232 includes a resin material (not shown) and a wavelength conversion material 272. The wavelength conversion material 272 will be described in detail later.

[0080] As the above-mentioned resin material, at least one selected from the group consisting of polyethylene (PE), ultra-high molecular weight polyethylene (U-PE), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), fluorine-based resin, polyimide (PI), unsaturated polyester (UP), epoxy resin (EP) and silicone resin (SI) can be exemplified. The molecular weight of ultra-high molecular weight polyethylene (U-PE) can be about 1 million to 7 million. As fluorine-based resins, polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), perfluoroethylene propylene copolymer (FEP), perfluoroalkoxyalkane (PFA), ethylene tetrafluoroethylene copolymer (ETFE), polychlorotrifluoroethylene (PCTFE), ethylene chlorotrifluoroethylene copolymer (ECTFE), polyvinyl fluoride (PVF), etc. can be exemplified.

[0081] Perfluoroalkoxyalkanes (PFA) are sometimes referred to as tetrafluoroethylene-perfluoroalkoxyethylene copolymers. Perfluoroethylene-propylene copolymers (FEP) are sometimes referred to as tetrafluoroethylene-ethylene copolymers. Ethylene-chlorotrifluoroethylene copolymers (ECTFE) are sometimes referred to as chlorotrifluoroethylene-ethylene copolymers.

[0082] (Optical properties of the surface protection layer 232)

[0083] The surface protection layer 232 preferably has a refractive index equal to that of air or atmosphere. The surface protection layer 232 has a refractive index equal to that of air or atmosphere in a stratospheric environment, for example. Examples of the surface protection layer 232 include glass having a refractive index of about 1.45 to 1.46 and resin having a refractive index of about 1.42. Examples of resin having a refractive index of about 1.42 include ethylene tetrafluoroethylene resin (ETFE resin).

[0084] The surface protection layer 232 is preferably substantially transparent to ultraviolet rays. The transmittance of light with a wavelength of 200 nm to 450 nm in the surface protection layer 232 is preferably 90% or more, more preferably 95% or more. The transmittance is measured, for example, by an ultraviolet-visible-near-infrared spectrophotometer.

[0085] The surface protection layer 232 is preferably substantially transparent to visible light and / or near infrared light. The transmittance of light with a wavelength of 380 nm to 780 nm in the surface protection layer 232 is preferably 90% or more, more preferably 95% or more. The transmittance of light with a wavelength of 800 nm to 1600 nm in the surface protection layer 232 is preferably 90% or more, more preferably 95% or more. The transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0086] (Physical Properties of Surface Protection Layer 232)

[0087] In the present embodiment, as the surface protection layer 232, a material having a durability of about half a year to two years in a stratospheric environment test is used. As the temperature of the stratospheric environment, -88 degrees to 50 degrees can be exemplified. As the air pressure of the stratospheric environment, 2kPa to 101.3kPa can be exemplified. As the average air pressure of the stratospheric environment, 5kPa or less can be exemplified. As the humidity of the stratospheric environment, 0%RH to ground humidity can be exemplified. As ultraviolet rays irradiated in the stratospheric environment, UV-A, UV-B and UV-C can be exemplified. As the ozone concentration in the stratospheric environment, 2ppm to 8ppm can be exemplified. Water can be present in the stratospheric environment.

[0088] The surface protection layer 232 is preferably flexible enough to be arranged along the shape of the wing surface of the flying object flying in the stratosphere. The surface protection layer 232 is preferably flexible enough to cope with the deflection and / or vibration generated when the flying object flies in the stratosphere.

[0089] In this embodiment, the sealing layer 234 seals the photoelectric conversion unit 240. The sealing layer 234 protects the photoelectric conversion unit 240 from oxygen and moisture, for example. The sealing layer 234 can seal a portion of the photoelectric conversion unit 240, or can seal the entire photoelectric conversion unit 240. In one embodiment, the sealing layer 234 is configured to cover at least a portion of the surface 242 of the photoelectric conversion unit 240. In other embodiments, the sealing layer 234 is configured to cover at least a portion of the side 246 of the photoelectric conversion unit 240.

[0090] exist Figure 2 In the illustrated embodiment, the sealing layer 234 seals the entire photoelectric conversion unit 240. In this case, a portion of the sealing layer 234 is disposed between the surface 242 of the photoelectric conversion unit 240 and the surface protection layer 232. Similarly, a portion of the sealing layer 234 is disposed between the back surface 244 of the photoelectric conversion unit 240 and the back surface protection layer 236.

[0091] The thickness of the sealing layer 234 may be greater than 20 μm and less than 400 μm. The thickness of the sealing layer 234 is preferably greater than 20 μm and less than 100 μm. Thus, the mass of the solar power generation module 112 is reduced. The thickness of the sealing layer 234 may be determined as 800 g / m 2 The thickness of the sealing layer 234 can be determined as follows: The mass of the surface protection layer 232 and the sealing layer 234 is 1000 g / m 2 The thickness of the sealing layer 234 can be determined as follows: The mass of the solar power generation module 112 is 1200 g / m 2 The thickness of the sealing layer 234 can be determined as follows: The mass of the solar power generation module 112 is 500 g / m2 The mass of the solar power generation module 112 may be the mass per unit installation area of ​​the solar power generation module 112 or the mass per unit area of ​​the solar power generation panel.

[0092] (Composition of Sealing Layer 234)

[0093] In this embodiment, the sealing layer 234 includes a resin material (not shown) and a wavelength conversion material 274. In this embodiment, the resin material of the sealing layer 234 is different in type and / or composition from the resin material of the surface protection layer 232. The wavelength conversion material 274 will be described in detail later.

[0094] As the resin material, various materials known as sealing materials for solar cells can be used. As the resin material, at least one selected from ethylene-vinyl acetate copolymer resin (EVA), polyolefin elastomer (POE), silicone resin (SI), and ionomer resin can be exemplified.

[0095] (Optical Characteristics of Sealing Layer 234)

[0096] The sealing layer 234 may have a refractive index greater than that of the surface protection layer 232. Thus, reflection loss is suppressed. As a material of the sealing layer 234, a resin having a refractive index of about 1.5 to 1.6 may be exemplified. As a resin having a refractive index of about 1.5 to 1.6, an ethylene-vinyl acetate copolymer resin (EVA resin) may be exemplified.

[0097] The sealing layer 234 is preferably substantially transparent to ultraviolet rays. The transmittance of light having a wavelength of 200 nm to 450 nm in the sealing layer 234 may be 80% or more. The transmittance is measured, for example, by an ultraviolet-visible-near-infrared spectrophotometer.

[0098] The sealing layer 234 is preferably substantially transparent to visible light and / or near infrared light. The transmittance of light with a wavelength of 380 nm to 780 nm in the sealing layer 234 may be 80% or more. The transmittance of light with a wavelength of 800 nm to 1600 nm in the sealing layer 234 may be 80% or more. The transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0099] In the present embodiment, the back protection layer 236 is disposed on the surface opposite to the surface on which the surface protection layer 232 is disposed, of the two surfaces of the sealing layer 234. The two surfaces of the sealing layer 234 may be surfaces substantially perpendicular to the thickness direction of the sealing layer 234. The back protection layer 236 is disposed between the sealing layer 234 and the wing surface 20 of the flying body 100.

[0100] In one embodiment, the back surface protection layer 236 is disposed in contact with the surface of the sealing layer 234 on the airfoil 20 side. In other embodiments, other layers may be interposed between the back surface protection layer 236 and the sealing layer 234.

[0101] In one embodiment, the back protection layer 236 is disposed in contact with the airfoil 20. In other embodiments, other layers may be interposed between the back protection layer 236 and the airfoil 20.

[0102] In this embodiment, the back protective layer 236 adheres the solar power generation module 112 and the wing surface 20 of the flying body 100. The material and shape of the back protective layer 236 are not particularly limited. As the back protective layer 236, there can be exemplified an adhesive (a substance that is liquid before use and becomes solid after application), an adhesive layer containing an adhesive and a resin material, an adhesive (a substance that is in a sticky and soft state before and after attachment and can immediately act as an adhesive), an adhesive layer containing an adhesive and a resin material, etc.

[0103] The photoelectric conversion unit 240 converts the light energy of the incident light into electric energy. As the photoelectric conversion unit 240, a unit having any known structure can be used. As the photoelectric conversion unit 240, examples thereof include silicon-based photovoltaic elements, III-V-based photovoltaic elements, perovskite-type photovoltaic elements, CIS solar cells, CIGS solar cells, dye-sensitized photovoltaic elements, and organic thin-film photovoltaic elements.

[0104] In this embodiment, the n-type semiconductor layer 252 includes an n-type semiconductor. In this embodiment, the p-type semiconductor layer 254 includes a p-type semiconductor. In this embodiment, the light-receiving surface electrode 256 is electrically connected to the n-type semiconductor. The light-receiving surface electrode 256 may be a comb-shaped electrode having a finger region and a bus bar region. In this embodiment, the back electrode 258 is electrically connected to the p-type semiconductor layer 254. In this embodiment, the positive terminal 262 is electrically connected to the back electrode 258. In this embodiment, the negative terminal 264 is electrically connected to the light-receiving surface electrode 256.

[0105] In this embodiment, the wavelength conversion material 272 converts the wavelength of light. For example, the wavelength conversion material 272 converts at least a portion of light of 100 nm to 500 nm into light of a different wavelength. The wavelength conversion material 272 can convert at least a portion of light of 100 nm to 400 nm into light of a different wavelength.

[0106] In this embodiment, the wavelength conversion material 272 is excited by the light incident on the solar power generation module 112 to emit light having a specific wavelength. The wavelength conversion material 272 is, for example, excited by the light in the second wavelength region to emit light having a wavelength longer than the excitation light. The second wavelength region, for example, includes a fourth wavelength region within a range of 100 nm or more and 400 nm or less. The details of the second wavelength region and the fourth wavelength region are described later.

[0107] In one embodiment, the wavelength conversion material 272 emits light of a wavelength with relatively good conversion efficiency of the photoelectric conversion element. The wavelength conversion material 272, for example, emits light with a wavelength of 380 nm or more. The wavelength conversion material 272 may also emit light with a wavelength of 400 nm or more. In other embodiments, the wavelength conversion material 272 emits light of a wavelength included in the excitation band of the wavelength conversion material 274.

[0108] The wavelength conversion material 272 includes, for example, one or more materials having an excitation band at a wavelength of 100 to 500 nm and a luminescence peak at a wavelength of 380 to 780 nm. Two or more wavelength conversion materials 272 may be used in combination. The wavelength conversion material 272 may include a material that emits light in blue (wavelength 440 to 480 nm), a material that emits light in green (wavelength 500 to 540 nm), a material that emits light in yellow (wavelength 540 to 595 nm), or a material that emits light in red (wavelength 600 to 700 nm).

[0109] In this embodiment, the wavelength conversion material 272 includes at least one of an inorganic phosphor and an organic phosphor. Examples of the wavelength conversion material 272 include organic pigments, rare earth complexes, inorganic crystals or glasses doped with luminescent ions, inorganic phosphor nanoparticles, quantum dots, oxide phosphor nanoparticles, etc. Quantum dots can be semiconductor particles of a size that has a quantum confinement effect.

[0110] The wavelength conversion material 272 may include an inorganic phosphor. As the inorganic phosphor, at least one selected from the group consisting of oxide phosphors, nitride phosphors, oxynitride phosphors, chloride phosphors, oxychloride phosphors, sulfide phosphors, halide phosphors, aluminate phosphors, halophosphate phosphors, and silica-based phosphors may be exemplified. A silica-based phosphor is a phosphor that uses silica as the main component of the matrix of the fluorescent light-emitting material. As the silica-based phosphor, a composite oxide containing granular silica and a europium compound may be exemplified. The silica-based phosphor may also contain aluminum and europium.

[0111] Compared with organic phosphors, inorganic phosphors have excellent durability in the stratospheric environment. Compared with organic phosphors, inorganic phosphors have excellent weather resistance and / or durability against ultraviolet rays. According to the present embodiment, the surface protection layer 232 including the wavelength conversion material 272 is arranged at a position further outward than the sealing layer 234 including the wavelength conversion material 274. Thus, for example, when the wavelength conversion material 272 converts light in the ultraviolet region into light with a wavelength longer than the light, the amount of ultraviolet rays received by the wavelength conversion material 274 is reduced.

[0112] Examples of inorganic phosphors that have an excitation band in the ultraviolet to near-ultraviolet region of 300 to 440 nm in wavelength and emit blue light include (Sr, Ba)MgAl 10 O 17 :Eu 2+ 、(Sr,Ba) 3 MgSi 2 O 8 :Eu 2+ Examples of inorganic phosphors that have an excitation band in the ultraviolet to near-ultraviolet region of 300 to 440 nm in wavelength and emit green light include SrAl 2 O 4 :Eu 2+ 、SrBaSiO 4 :Eu 2+ , Y 3 (Al, Gd) 5 O 12 :Ce 3+ 、SrSiON:Eu 2+ 、BaMgAl 10 O 17 :Eu 2+ , Mn 2+ , Ba 2 MgSi 2 O 7 :Eu 2+ , Ba 2 SiO 4 :Eu 2+ , Ba 2 Li 2 Si 2 O 7 :Eu 2+ , BaAl 2 O 4 :Eu 2+ As an inorganic phosphor having an excitation band in the ultraviolet to near-ultraviolet region of 300 to 440 nm in wavelength and emitting yellow light, there can be exemplified La 3 Si 6 N 11 :Ce3+ As an inorganic phosphor having an excitation band in the ultraviolet to near-ultraviolet region of wavelength 300 to 440 nm and emitting red light, MgSr can be exemplified. 3 Si 2 O 8 :Eu 2+ , Mn 2+ , Ca 2 MgSi 2 O 7 :Eu 2+ , Mn 2+ wait.

[0113] Examples of inorganic phosphors that have an excitation band in the blue region of 440 to 480 nm in wavelength and emit green light include SrAl 2 O 4 :Eu 2+ 、SrBaSiO 4 :Eu 2+ , Y 3 (Al, Gd) 5 O 12 :Ce 3+ 、SrSiON:Eu 2+ ,β-SiAlON:Eu 2+ As an inorganic phosphor having an excitation band in the blue region of wavelength 440 to 480 nm and emitting yellow light, Y 3 (Al, Gd) 5 O 12 :Ce 3+ , Sr 2 SiO 4 :Eu 2+ As an inorganic phosphor having an excitation band in the blue region of wavelength 440 to 480 nm and emitting red light, CaAlSiN 3 :Eu 2+ 、CaSiN 3 :Eu 2+ 、(Ca,Sr) 2 Si 5 N 8 :Eu 2+ 、α-SiAlON:Eu 2+ wait.

[0114] The content of the wavelength conversion material 272 in the surface protection layer 232 may be 10% by mass or less, preferably 1 to 8% by mass. When the content of the wavelength conversion material 272 is within the above numerical range, for example, even if the thickness of the surface protection layer 232 is 20 μm to 50 μm, ultraviolet rays in an amount sufficient to improve the conversion efficiency of the photoelectric conversion unit 240 can be converted into visible light or near infrared rays.

[0115] The content of the wavelength conversion material 272 can also be determined by considering the transmittance of the surface protection layer 232 of ultraviolet light. The content of the wavelength conversion material 272 can be determined so that the transmittance of the surface protection layer 232 of ultraviolet light is 90% or more. The content of the wavelength conversion material 272 is determined, for example, so that the transmittance of the surface protection layer 232 of light with a wavelength of 250nm to 1600nm is 90% or more. The above transmittance is measured, for example, by an ultraviolet visible near infrared spectrophotometer. The surface protection layer 232 can be an example of a layer containing the wavelength conversion material 272.

[0116] In this embodiment, the wavelength conversion material 274 converts the wavelength of light. For example, the wavelength conversion material 274 converts at least a portion of light of 100 nm to 500 nm into light of a different wavelength. The wavelength conversion material 274 can convert at least a portion of light of 100 nm to 400 nm into light of a different wavelength.

[0117] In this embodiment, the wavelength conversion material 274 is excited by the light incident on the solar power generation module 112 and / or the light emitted by the wavelength conversion material 272, and emits light having a specific wavelength. The wavelength conversion material 274 is excited by the light in the first wavelength region, and emits light having a wavelength longer than the excitation light. The first wavelength region, for example, includes a third wavelength region within a range of 100 nm or more and 400 nm or less. The details of the first wavelength region and the third wavelength region are described later.

[0118] The upper limit value of the first wavelength region is, for example, different from the upper limit value of the second wavelength region. The lower limit value of the first wavelength region is, for example, different from the lower limit value of the second wavelength region. The upper limit value of the third wavelength region is, for example, different from the upper limit value of the fourth wavelength region. The lower limit value of the third wavelength region is, for example, different from the lower limit value of the fourth wavelength region.

[0119] In one embodiment, the maximum excitation wavelength of wavelength conversion material 274 is different from the maximum excitation wavelength of wavelength conversion material 272. In other embodiments, the maximum fluorescence wavelength of wavelength conversion material 274 is different from the maximum fluorescence wavelength of wavelength conversion material 272.

[0120] In one embodiment, the wavelength conversion material 274 may convert the wavelength of light on the longer wavelength side compared to the light whose wavelength is converted by the wavelength conversion material 272. For example, the wavelength conversion material 274 has an excitation band on the longer wavelength side compared to the wavelength conversion material 272. In other embodiments, the wavelength conversion material 274 may convert the wavelength of light on the shorter wavelength side compared to the light whose wavelength is converted by the wavelength conversion material 272. For example, the wavelength conversion material 274 has an excitation band on the shorter wavelength side compared to the wavelength conversion material 272. The wavelength conversion material 272 may have the same structure as the second wavelength conversion material described above, and the wavelength conversion material 274 may have the same structure as the first wavelength conversion material described above.

[0121] In this embodiment, the wavelength conversion material 274 emits light of a wavelength with relatively good conversion efficiency of the photoelectric conversion element. The wavelength conversion material 274 emits light with a wavelength of 380 nm or more, for example. The wavelength conversion material 274 may also emit light with a wavelength of 400 nm or more. Thus, the conversion efficiency of the photoelectric conversion unit 240 is improved.

[0122] The wavelength conversion material 274 includes, for example, one or more materials having an excitation band at a wavelength of 100 to 500 nm and a luminescence peak at a wavelength of 380 to 780 nm. Two or more wavelength conversion materials 274 may be used in combination. The wavelength conversion material 274 may include a material that emits light in blue (wavelength 440 to 480 nm), a material that emits light in green (wavelength 500 to 540 nm), a material that emits light in yellow (wavelength 540 to 595 nm), or a material that emits light in red (wavelength 600 to 700 nm).

[0123] In this embodiment, the wavelength conversion material 274 includes at least one of an inorganic phosphor and an organic phosphor. Examples of the wavelength conversion material 274 include organic pigments, rare earth complexes, inorganic crystals or glasses doped with luminescent ions, inorganic phosphor nanoparticles, quantum dots, oxide phosphor nanoparticles, etc. Quantum dots can be semiconductor particles of a size that has a quantum confinement effect.

[0124] The wavelength conversion material 274 may include the same inorganic phosphor as that described for the wavelength conversion material 272. The wavelength conversion material 274 may include an organic phosphor. Examples of the organic phosphor include organic pigments, luminescent rare earth complexes, and the like. Examples of the luminescent rare earth complex include lanthanide complexes such as Eu (III) complexes.

[0125] The content of the wavelength conversion material 274 in the sealing layer 234 may be 10% by mass or less, preferably 1 to 8% by mass. When the content of the wavelength conversion material 274 is within the above numerical range, for example, even if the thickness of the sealing layer 234 is 20 μm or more and 100 μm or less, it is possible to convert ultraviolet rays in an amount sufficient to improve the conversion efficiency of the photoelectric conversion unit 240 into visible light or near infrared rays. As a result, for example, the conversion efficiency on the ground can be increased by 2% or more. In addition, the conversion efficiency in the stratospheric environment can be increased by 4% or more.

[0126] The content of the wavelength conversion material 274 can also be determined by considering the transmittance of the sealing layer 234 for ultraviolet rays. The content of the wavelength conversion material 274 is determined, for example, so that the transmittance of the sealing layer 234 for light with a wavelength of 250nm to 1600nm is 90% or more. The content of the wavelength conversion material 274 can also be determined so that the transmittance of the sealing layer 234 for light with a wavelength of 250nm to 1600nm is 80% or more. The above transmittance is measured, for example, by an ultraviolet-visible-near-infrared spectrophotometer. The sealing layer 234 can be an example of a layer containing the wavelength conversion material 274. In one embodiment, the transmittance of the sealing layer 234 for ultraviolet rays is 80% or more, and the transmittance of the surface protection layer 232 for ultraviolet rays is 90% or more. In other embodiments, the transmittance of the sealing layer 234 for ultraviolet rays is 90% or more, and the transmittance of the surface protection layer 232 for ultraviolet rays is 90% or more.

[0127] The surface protection layer 232 may be an example of a second wavelength conversion layer. The resin material included in the surface protection layer 232 may be an example of a second resin. The sealing layer 234 may be an example of a first wavelength conversion layer. The resin material included in the sealing layer 234 may be an example of a first resin. The photoelectric conversion unit 240 may be an example of a photoelectric conversion element. The wavelength conversion material 272 may be an example of a second wavelength conversion material. The wavelength conversion material 274 may be an example of a first wavelength conversion material.

[0128] (An example of another embodiment)

[0129] In this embodiment, the details of the solar power generation module 112 are described by taking the case where the solar power generation module 112 does not have a light confinement structure as an example. However, the solar power generation module 112 is not limited to this embodiment. In other embodiments, the solar power generation module 112 may also have a light confinement structure for effectively confining light inside the solar power generation module 112.

[0130] For example, the solar power generation module 112 has a fine concavoconvex structure on the side (sometimes referred to as the outer side) where light is incident. For example, the solar power generation module 112 has a reflective portion that reflects light traveling from the inside of the solar power generation module 112 to the outside of the solar power generation module 112 on the side connecting the surface 222 and the back surface 224. For example, the solar power generation module 112 has a reflective portion that reflects light traveling from the inside of the solar power generation module 112 to the outside of the solar power generation module 112 between the back protective layer 236 and the sealing layer 234, at the interface between the back protective layer 236 and the sealing layer 234, or on the back surface 224 side of the back protective layer 236. The back protective layer 236 can also function as the above-mentioned reflective layer.

[0131] The light confinement structure may be configured to confine light in a wavelength region corresponding to ultraviolet rays. Thus, the wavelength of ultraviolet rays can be effectively converted. As a result, the power generation efficiency of the solar power generation module 112 is improved. The light confinement structure may be configured to confine light in a wavelength region in which the conversion efficiency of the photoelectric conversion unit 240 is relatively high. Thus, the power generation efficiency of the solar power generation module 112 is improved.

[0132] In this embodiment, the photoelectric conversion unit 240 is described in detail by taking the case where the photoelectric conversion unit 240 generates electricity using a pn junction as an example. However, the photoelectric conversion unit 240 is not limited to this embodiment. In other embodiments, for example, the photoelectric conversion unit 240 generates electricity using a pin junction.

[0133] In this embodiment, the photoelectric conversion unit 240 is described in detail by taking the case where the light-receiving surface electrode 256 is configured on the surface 242 side of the photoelectric conversion unit 240 as an example. However, the photoelectric conversion unit 240 is not limited to this embodiment. In other embodiments, for example, the photoelectric conversion unit 240 may have a back electrode type structure that does not have an electrode on the surface 242 side.

[0134] In this embodiment, the details of the solar power generation module 112 and the photoelectric conversion unit 240 are described by taking the case where the solar power generation module 112 and the photoelectric conversion unit 240 have a single-sided light-receiving structure as an example. However, the solar power generation module 112 and the photoelectric conversion unit 240 are not limited to this embodiment. In other embodiments, at least one of the solar power generation module 112 and the photoelectric conversion unit 240 may have a double-sided light-receiving structure.

[0135] In the present embodiment, the details of the solar power generation module 112 are described by taking the case where the sealing layer 234 seals the entire photoelectric conversion unit 240 as an example. However, the solar power generation module 112 is not limited to the present embodiment. In other embodiments, the sealing layer 234 seals a portion of the photoelectric conversion unit 240. For example, the photoelectric conversion unit 240 is sealed by the sealing layer 234 and the back protective layer 236. For example, the photoelectric conversion unit 240 is configured so that the back side 244 of the photoelectric conversion unit 240 is in contact with the back protective layer 236. In addition, the sealing layer 234 is configured to cover the photoelectric conversion unit 240. Thus, the surface 242 and the side 246 of the photoelectric conversion unit 240 are sealed by the sealing layer 234.

[0136] use Figure 3 as well as Figure 4 , the details of a solar power generation module 312 as another example of the solar power generation module 112 are described. The solar power generation module 312 is different from the solar power generation module 112 in that it includes another layer in which the content of the wavelength conversion material 272 is greater than that of the surface protection layer 232. For example, the solar power generation module 312 is different from the solar power generation module 112 in that the wavelength conversion material 272 is disposed in a layer different from the surface protection layer 232.

[0137] Figure 3 An example of the internal structure of the solar power generation module 312 is schematically shown. In this embodiment, the solar power generation module 312 is different from the solar power generation module 112 in that the conversion layer 330 including the wavelength conversion material 272 is provided on the outer side of the surface protection layer 232, and the surface protection layer 232 does not include the wavelength conversion material 272. Regarding other features, the solar power generation module 312 can have the same structure as the solar power generation module 112.

[0138] In this embodiment, the conversion layer 330 includes a resin material (not shown) and a wavelength conversion material 272. In this embodiment, the resin material of the conversion layer 330 is different in type and / or composition from the resin material of the sealing layer 234. In this embodiment, the resin material of the conversion layer 330 is different in type and / or composition from the resin material of the surface protection layer 232. As the resin material of the conversion layer 330, for example, various resins exemplified in connection with the surface protection layer 232 are used.

[0139] In this embodiment, the content of the wavelength conversion material 272 in the conversion layer 330 may be greater than that in the surface protection layer 232. The content of the wavelength conversion material 272 in the conversion layer 330 may be 10 mass % or less, preferably 1 to 8 mass %.

[0140] The conversion layer 330 may have the same optical properties as the surface protection layer 232. The conversion layer 330 may have a refractive index greater than that of the surface protection layer 232. In this case, the sealing layer 234 may have a refractive index greater than that of the surface protection layer 232. Thus, reflection loss is suppressed. The absolute value of the difference between the refractive index of the conversion layer 330 and the refractive index of the surface protection layer 232 may be greater than 0.01 and less than 2.5. The absolute value of the above difference may be greater than 0.05 and less than 2, or may be greater than 0.05 and less than 1, or may be greater than 0.05 and less than 0.5, or may be greater than 0.05 and less than 0.1. The absolute value of the difference between the refractive index of the surface protection layer 232 and the refractive index of the sealing layer 234 may be greater than 0.01 and less than 2.5. The absolute value of the above difference may be greater than 0.05 and less than 2, or may be greater than 0.05 and less than 1, or may be greater than 0.05 and less than 0.5, or may be greater than 0.05 and less than 0.1.

[0141] In this embodiment, the wavelength conversion material 272 preferably includes an inorganic phosphor. The wavelength conversion material 274 may include an inorganic phosphor and / or an organic phosphor. The content of the organic phosphor in the sealing layer 234 is greater than the content of the organic phosphor in the conversion layer 330.

[0142] The sealing layer 234 may be an example of a first wavelength conversion layer. The conversion layer 330 may be an example of a second wavelength conversion layer.

[0143] Figure 4 Another example of the internal structure of the solar power generation module 312 is schematically shown. Figure 3 The solar power generation module 312 described in the related description is different in that a conversion layer 330 is provided between the surface protection layer 232 and the sealing layer 234. Regarding other features, the solar power generation module 312 according to this embodiment may have the same Figure 3 The solar power generation module 312 described in the related description has the same structure.

[0144] use Figure 5 as well as Figure 6 , details of a solar power generation module 512 as another example of the solar power generation module 112 are described. The solar power generation module 512 is different from the solar power generation module 112 in that: a coating layer 530 thinner than the surface protection layer 232 is provided on the surface 242 of the photoelectric conversion unit 240; and the surface protection layer 232 and / or the sealing layer 234 include a wavelength conversion material 272, and the coating layer 530 includes a wavelength conversion material 274.

[0145] Figure 5An example of the internal structure of the solar power generation module 512 is schematically shown. In the present embodiment, the solar power generation module 512 includes a coating layer 530 on the surface 242 of the photoelectric conversion unit 240 .

[0146] In this embodiment, the coating layer 530 includes a resin material (not shown) and a wavelength conversion material 274. The thickness of the coating layer 530 may be greater than 5 μm and less than 50 μm. The thickness of the coating layer 530 may also be less than 10 μm. The thickness of the coating layer 530 may be less than 1 μm or less than 0.1 μm. The content of the wavelength conversion material 274 in the coating layer 530 may be 5 mass %.

[0147] (Optical properties of coating 530)

[0148] The coating layer 530 may have a greater refractive index than the sealing layer 234. Thus, reflection loss is suppressed.

[0149] The coating layer 530 is preferably substantially transparent to ultraviolet rays. The transmittance of light with a wavelength of 200 nm to 450 nm in the coating layer 530 may be 80% or more. In this case, the transmittance of light with a wavelength of 200 nm to 450 nm in the sealing layer 234 may be 90% or more, or 95% or more. The transmittance is measured, for example, by an ultraviolet-visible-near-infrared spectrophotometer.

[0150] The coating 530 is preferably substantially transparent to visible light and / or near infrared light. The transmittance of light with a wavelength of 380 nm to 780 nm in the coating 530 may be 80% or more. The transmittance of light with a wavelength of 800 nm to 1600 nm in the coating 530 may be 80% or more. The transmittance is measured, for example, by a UV-visible-near infrared spectrophotometer.

[0151] The reflectivity of light with a wavelength of 200 nm to 450 nm in the coating layer 530 may be less than 5%, thereby suppressing reflection loss.

[0152] The coating layer 530 is produced, for example, by the following steps. First, the wavelength conversion material 274 and a solvent are mixed to produce a paste or slurry of the wavelength conversion material 274. Next, the paste or slurry is applied to the surface 242 of the photoelectric conversion unit 240. Thereafter, a drying step of the paste or slurry is performed. Thus, the coating layer 530 is formed on the surface 242 of the photoelectric conversion unit 240.

[0153] In the present embodiment, the sealing layer 234 is configured to cover the coating layer 530 disposed on the surface 242 of the photoelectric conversion unit 240 and at least a portion of the side surface 246 of the photoelectric conversion unit 240. For example, the sealing layer 234 is configured to cover the coating layer 530 and the junction portion between the n-type semiconductor layer 252 and the p-type semiconductor layer 254 as a whole.

[0154] In this embodiment, the sealing layer 234 includes a wavelength conversion material 272. The content of the wavelength conversion material 272 in the sealing layer 234 may be 10% by mass or less, or 8% by mass or less. The content of the wavelength conversion material 272 in the sealing layer 234 is preferably 1 to 8% by mass.

[0155] The content of the wavelength conversion material 272 can also be determined by considering the transmittance of the sealing layer 234 of ultraviolet light. The content of the wavelength conversion material 272 is determined, for example, so that the transmittance of the sealing layer 234 of light with a wavelength of 250nm to 1600nm is 90% or more. The content of the wavelength conversion material 272 can also be determined so that the transmittance of the sealing layer 234 of light with a wavelength of 250nm to 1600nm is 80% or more. The above transmittance is measured, for example, by an ultraviolet visible near infrared spectrophotometer. The sealing layer 234 can be an example of a layer containing the wavelength conversion material 272.

[0156] In one embodiment, the sealing layer 234 may have the same structure as the sealing layer 234 described with respect to the solar power generation module 112, except that the sealing layer 234 includes the wavelength conversion material 272 instead of the wavelength conversion material 274. In other embodiments, the sealing layer 234 may have the same structure as the surface protection layer 232 described with respect to the solar power generation module 112.

[0157] The coating layer 530 may be an example of a first wavelength conversion layer. The sealing layer 234 may be an example of a second wavelength conversion layer.

[0158] Figure 6 Another example of the internal structure of the solar power generation module 512 is schematically shown. Figure 5 The difference between the solar power generation module 512 described above is that the surface protection layer 232 includes the wavelength conversion material 272, and the sealing layer 234 does not include the wavelength conversion material 272. In this embodiment, the sealing layer 234 is arranged between the coating layer 530 and the surface protection layer 232. Regarding other features, the solar power generation module 512 involved in this embodiment can have the same Figure 5 The solar power generation module 512 described above has the same structure.

[0159] The coating layer 530 may be an example of a first wavelength conversion layer. The surface protection layer 232 may be an example of a second wavelength conversion layer. The sealing layer 234 may be an example of an intermediate layer.

[0160] (An example of another embodiment)

[0161] The sealing layer 234 may include the wavelength conversion material 272, and may also include the wavelength conversion material 274. The content of the wavelength conversion material 272 in the sealing layer 234 may be less than the content of the wavelength conversion material 272 in the surface protection layer 232. The content of the wavelength conversion material 274 in the sealing layer 234 may be less than the content of the wavelength conversion material 274 in the coating layer 530.

[0162] In this embodiment, the details of the solar power generation module 512 are described by taking the case where the surface protection layer 232 and the sealing layer 234 are in contact as an example. However, the solar power generation module 512 is not limited to this embodiment. In other embodiments, other layers may be interposed between the surface protection layer 232 and the sealing layer 234.

[0163] In this embodiment, the details of the solar power generation module 512 are described by taking the case where the wavelength conversion material 272 is included in the surface protection layer 232 as an example. However, the solar power generation module 512 is not limited to this embodiment. Figure 3 as well as Figure 4 Similarly to the embodiment described above, the solar power generation module 512 may include a conversion layer 330 including a wavelength conversion material 272. In this case, the surface protection layer 232 may not include the wavelength conversion material 272. The content of the wavelength conversion material 272 in the wavelength conversion material 272 may be smaller than the content of the wavelength conversion material 272 in the conversion layer 330.

[0164] use Figure 7 , Figure 8 as well as Fig. 9 , the details of other examples of the solar power generation module 112 are described. Figure 7 , Figure 8 as well as Fig. 9 The embodiment described in connection therewith provides a double-sided light-receiving type solar power generation module.

[0165] Figure 7 An example of the internal structure of the solar power generation module 712 is schematically shown. The solar power generation module 712 may be Figure 2 The solar power generation module 712 of the single-side light receiving type corresponds to the solar power generation module of the double-side light receiving type. The solar power generation module 712 may have the same structure as the solar power generation module 112 except that it has a double-side light receiving structure.

[0166] In this embodiment, the solar power generation module 712 is different from the solar power generation module 112 in that the surface protection layer 232, the sealing layer 234 and the back protection layer 732 are stacked in this order. The back protection layer 732 includes a wavelength conversion material 272. The back protection layer 732 may have the same structure as the surface protection layer 232.

[0167] In one embodiment, the solar power generation module 712 includes a back surface protection layer 236 and is bonded to the airfoil 20 via the back surface protection layer 236. In other embodiments, the solar power generation module 712 may not include the back surface protection layer 236.

[0168] The solar power generation module 712 may be an example of a photoelectric conversion device. The surface protection layer 232 may be an example of a second wavelength conversion layer. The sealing layer 234 may be an example of a first wavelength conversion layer. The back protection layer 732 may be an example of a second wavelength conversion layer. The resin material contained in the back protection layer 732 may be an example of a second resin.

[0169] Figure 8 An example of the internal structure of the solar power generation module 812 is schematically shown. The solar power generation module 812 may be Figure 4 The solar power generation module 812 of the single-side light receiving type described above corresponds to a solar power generation module of the double-side light receiving type. The solar power generation module 812 may have the same structure as the solar power generation module 312 except that it has a double-side light receiving type structure.

[0170] In this embodiment, the solar power generation module 812 is different from the solar power generation module 312 in that the surface protection layer 232, the conversion layer 330, the sealing layer 234, the conversion layer 830 and the back protection layer 732 are stacked in this order. The conversion layer 830 includes a wavelength conversion material 272. The conversion layer 830 may have the same structure as the conversion layer 330.

[0171] In one embodiment, the solar power generation module 812 includes a back surface protection layer 236 and is bonded to the airfoil 20 via the back surface protection layer 236. In other embodiments, the solar power generation module 812 may not include the back surface protection layer 236.

[0172] The solar power generation module 812 may be an example of a photovoltaic conversion device. The sealing layer 234 may be an example of a first wavelength conversion layer. The conversion layer 330 may be an example of a second wavelength conversion layer. The conversion layer 830 may be an example of a second wavelength conversion layer. The resin material contained in the conversion layer 830 may be an example of a second resin.

[0173] (An example of another embodiment)

[0174] In this embodiment, the solar power generation module 812 is connected to Figure 4 The solar power generation module 812 is described in detail by taking the case of the solar power generation module 312 of the single-sided light receiving type corresponding to the double-sided light receiving type as an example. However, the solar power generation module 812 is not limited to this embodiment. In other embodiments, the solar power generation module 812 may also be Figure 3 The single-side light receiving type solar power generation module 312 described above corresponds to a double-side light receiving type solar power generation module.

[0175] Fig. 9 An example of the internal structure of the solar power generation module 912 is schematically shown. The solar power generation module 912 may be Figure 6 The solar power generation module 912 of the single-side light receiving type corresponds to the solar power generation module of the double-side light receiving type. The solar power generation module 912 may have the same structure as the solar power generation module 512 except that it has a double-side light receiving type structure.

[0176] In this embodiment, the difference between the solar power generation module 912 and the solar power generation module 512 lies in that the surface protection layer 232, the sealing layer 234 and the back protection layer 732 are stacked in this order; and the coating 530 is configured on the surface 242 side of the photoelectric conversion unit 240, and the coating 930 is configured on the back 244 side of the photoelectric conversion unit 240.

[0177] In this embodiment, the surface protection layer 232 and the back protection layer 732 include a wavelength conversion material 272. The back protection layer 732 may have the same structure as the surface protection layer 232. In this embodiment, the coating layer 530 and the coating layer 930 include a wavelength conversion material 274. The coating layer 930 may have the same structure as the coating layer 530.

[0178] In one embodiment, the solar power generation module 912 includes a back surface protection layer 236 and is bonded to the airfoil 20 via the back surface protection layer 236. In other embodiments, the solar power generation module 712 may not include the back surface protection layer 236.

[0179] The solar power generation module 912 may be an example of a photovoltaic conversion device. The surface protection layer 232 may be an example of a second wavelength conversion layer. The coating layer 530 may be an example of a first wavelength conversion layer. The back protection layer 732 may be an example of a second wavelength conversion layer. The resin material contained in the back protection layer 732 may be an example of a second resin. The coating layer 930 may be an example of a first wavelength conversion layer. The resin material contained in the coating layer 930 may be an example of a first resin.

[0180] (An example of another embodiment)

[0181] In this embodiment, the solar power generation module 912 is connected to Figure 6 The solar power generation module 912 is described in detail by taking the case of the solar power generation module 512 of the single-sided light receiving type corresponding to the double-sided light receiving type as an example. However, the solar power generation module 912 is not limited to this embodiment. In other embodiments, the solar power generation module 912 may also be Figure 5 The single-side light receiving type solar power generation module 512 described above corresponds to a double-side light receiving type solar power generation module.

[0182] In this embodiment, the details of the solar power generation module 912 are described by taking the case where each of the surface protection layer 232 and the back protection layer 732 is in contact with the sealing layer 234 as an example. However, the solar power generation module 912 is not limited to this embodiment. In other embodiments, other layers may be arranged between at least one of the surface protection layer 232 and the back protection layer 732 and the sealing layer 234. The other layers may have the same structure as the conversion layer 330.

[0183] In this embodiment, the details of the solar power generation module 912 are described by taking the case where the surface protection layer 232 and the back protection layer 732 are arranged on the outermost side of the solar power generation module 912 as an example. However, the solar power generation module 912 is not limited to this embodiment. In other embodiments, other layers may be arranged on the outer side of at least one of the surface protection layer 232 and the back protection layer 732. The other layers may have the same structure as the conversion layer 330.

[0184] Fig.10 An example of the internal structure of the solar power generation module 1012 is schematically shown. The solar power generation module 1012 may have the same structure as that of the solar power generation module 1012 except that the coating layer 1030 is disposed between the sealing layer 234 and the surface 242 of the photoelectric conversion unit 240. Figure 2 The solar power generation module 112 described above has the same structure.

[0185] In this embodiment, the coating layer 1030 is arranged in contact with the surface 242 of the photoelectric conversion unit 240. The coating layer 1030 includes, for example, a resin material (not shown) and a UV absorbing material 1074. The coating layer 1030 is different from the coating layer 530 in that the UV absorbing material 1074 is included instead of the wavelength conversion material 274 or together with the wavelength conversion material 274. The coating layer 1030 may have the same structure as the coating layer 530 except for the above-mentioned difference.

[0186] In this embodiment, the UV absorbing material 1074 absorbs ultraviolet rays. Any known UV absorber can be used as the UV absorbing material 1074. The content of the UV absorbing material 1074 in the coating layer 1030 may be 5% by mass or less.

[0187] In the present embodiment, the sealing layer 234 is disposed on the surface (the upper surface in the figure) opposite to the surface (the lower surface in the figure) where the coating layer 1030 contacts the photoelectric conversion unit 240, of the two surfaces of the coating layer 1030. The sealing layer 234 is disposed so as to cover the coating layer 1030 disposed on the surface 242 of the photoelectric conversion unit 240 and at least a portion of the side surface 246 of the photoelectric conversion unit 240. For example, the sealing layer 234 is disposed so as to entirely cover the coating layer 1030 and the junction portion between the n-type semiconductor layer 252 and the p-type semiconductor layer 254.

[0188] According to the present embodiment, the light incident on the solar power generation module 1012 first passes through the layer including the wavelength conversion material 272. The light that has passed through the above layer then passes through the layer including the wavelength conversion material 274. The light that has passed through the above layer then passes through the layer including the UV absorbing material 1074 and enters the photoelectric conversion unit 240. According to the present embodiment, even if ultraviolet rays remain in the light that has passed through the layer including the wavelength conversion material 272 and the layer including the wavelength conversion material 274, the ultraviolet rays are absorbed by the UV absorbing material 1074. Thus, the degradation of the photoelectric conversion unit 240 caused by ultraviolet rays is further suppressed.

[0189] The solar power generation module 1012 may be an example of a photovoltaic conversion device. The coating layer 1030 may be an example of an absorption layer. The sealing layer 234 may be an example of a conversion layer.

[0190] (An example of another embodiment)

[0191] In this embodiment, the solar power generation module 1012 is connected to Figure 2 The solar power generation module 1012 is described in detail by taking the case corresponding to the solar power generation module 112 as an example. However, the solar power generation module 1012 is not limited to this embodiment. In other embodiments, the solar power generation module 1012 may have the same Figure 3 to Figure 9 The solar power generation module described above has the same structure.

[0192] In this embodiment, the details of the solar power generation module 1012 are described by taking the case where a thin coating 1030 is arranged on the surface 242 of the photoelectric conversion unit 240 as an example. However, the solar power generation module 1012 is not limited to this embodiment. In other embodiments, a film having a thickness of 20 μm to 100 μm, preferably 20 μm to 50 μm and containing a UV absorbing material 1074 may be arranged in contact with the photoelectric conversion unit 240 of the photoelectric conversion unit 240.

[0193] The present invention has been described above using the embodiments, and the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made in the above embodiments. From the description of the claims, it can be known that the mode of making such changes or improvements can also be included in the technical scope of the present invention.

[0194] It should be noted that the execution order of each process such as actions, sequences, steps and stages in the devices, systems, programs and methods represented in the claims, specifications and drawings can be implemented in any order unless it is specifically stated as "before", "before", etc., and the output of the previous process is not used in the subsequent process. Regarding the action flow in the claims, specifications and drawings, even if it is explained using "first," "next," etc. for convenience, it does not mean that it must be implemented in this order.

[0195] Description of Reference Numerals

[0196] 20, wing surface; 100, flying body; 110, power generation system; 112, solar power generation module; 120, power control circuit; 122, power storage device; 130, motor; 140, propeller; 150, sensor; 160, control device; 222, surface; 224, back; 232, surface protection layer; 234, sealing layer; 236, back protection layer; 240, photoelectric conversion unit; 242, surface; 244, back; 246, side; 252, n-type semiconductor layer; 254, p-type semiconductor layer; 256, Light-receiving surface electrode; 258, back electrode; 262, positive terminal; 264, negative terminal; 272, wavelength conversion material; 274, wavelength conversion material; 312, solar power generation module; 330, conversion layer; 512, solar power generation module; 530, coating; 712, solar power generation module; 732, back protection layer; 812, solar power generation module; 830, conversion layer; 912, solar power generation module; 930, coating; 1012, solar power generation module; 1030, coating; 1074, UV absorbing material.

Claims

1. A photoelectric conversion device comprising: Photoelectric conversion element, which converts the light energy of incident light into electrical energy; A first wavelength conversion layer is arranged in contact with the light receiving surface of the photoelectric conversion element; and A second wavelength conversion layer is disposed on a surface of the first wavelength conversion layer opposite to a surface in contact with the photoelectric conversion element. The first wavelength conversion layer includes a first wavelength conversion material that converts the wavelength of light in a first wavelength range. The second wavelength conversion layer includes a second wavelength conversion material that converts the wavelength of light in a second wavelength range. An upper limit value of the first wavelength range is different from an upper limit value of the second wavelength range and / or a lower limit value of the first wavelength range is different from a lower limit value of the second wavelength range.

2. The photoelectric conversion device according to claim 1, wherein The first wavelength region includes a third wavelength region within a range of 100 nm to 400 nm. The second wavelength region includes a fourth wavelength region included in a range of 100 nm to 400 nm, An upper limit value of the third wavelength region is different from an upper limit value of the fourth wavelength region and / or a lower limit value of the third wavelength region is different from a lower limit value of the fourth wavelength region.

3. The photoelectric conversion device according to claim 1 or 2, wherein: The first wavelength conversion layer includes a first resin and the first wavelength conversion material, The second wavelength conversion layer includes a second resin and the second wavelength conversion material, The first resin and the second resin are different in type and / or composition.

4. The photoelectric conversion device according to claim 3, wherein: The first wavelength conversion layer has a greater refractive index than the second wavelength conversion layer.

5. The photoelectric conversion device according to claim 3 or 4, wherein: The first resin is at least one selected from ethylene-vinyl acetate copolymer resin (EVA), polyolefin elastomer (POE), silicone resin (SI) and ionomer resin.

6. The photoelectric conversion device according to any one of claims 3 to 5, wherein The second resin is at least one selected from the group consisting of polyethylene (PE), ultra-high molecular weight polyethylene (U-PE), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), fluorine-based resin, polyimide (PI), unsaturated polyester (UP), epoxy resin (EP) and silicone resin (SI).

7. The photoelectric conversion device according to any one of claims 1 to 6, wherein The first wavelength conversion layer is configured to cover the light receiving surface of the photoelectric conversion element and at least a portion of a side surface of the photoelectric conversion element. The first wavelength conversion layer has a thickness of 20 μm or more and 100 μm or less.

8. The photoelectric conversion device according to any one of claims 1 to 5, wherein The first wavelength conversion layer has a thickness less than 10 μm.

9. The photoelectric conversion device according to claim 8, wherein: The second wavelength conversion layer is arranged to cover the first wavelength conversion layer arranged on the light receiving surface of the photoelectric conversion element and at least a part of a side surface of the photoelectric conversion element.

10. The photoelectric conversion device according to claim 8, wherein The photoelectric conversion device further includes an intermediate layer disposed between the first wavelength conversion layer and the second wavelength conversion layer. The intermediate layer is arranged so as to cover the first wavelength conversion layer arranged on the light receiving surface of the photoelectric conversion element and at least a part of a side surface of the photoelectric conversion element.

11. The photoelectric conversion device according to any one of claims 1 to 10, wherein The second wavelength conversion layer has a thickness of 20 μm or more and 50 μm or less.

12. The photoelectric conversion device according to any one of claims 1 to 11, wherein The transmittance of the first wavelength conversion layer to light of 200nm to 450nm is greater than 80%. The second wavelength conversion layer has a transmittance of 90% or more to light of 200 nm to 450 nm.

13. The photoelectric conversion device according to any one of claims 1 to 12, wherein: The first wavelength conversion material includes an organic phosphor.

14. The photoelectric conversion device according to any one of claims 1 to 13, wherein The second wavelength conversion material includes an inorganic phosphor.

15. The photoelectric conversion device according to any one of claims 1 to 14, wherein The first wavelength conversion layer comprises: an absorption layer, arranged in contact with the light-receiving surface of the photoelectric conversion element, comprising a UV absorbing material; and The conversion layer is disposed on a surface of the UV absorbing layer opposite to a surface in contact with the photoelectric conversion element, and includes the first wavelength conversion material.

16. A flying object comprising: The photoelectric conversion device according to any one of claims 1 to 15; and The propulsion generating device generates propulsion using the electric energy generated by the photoelectric conversion device.

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