Surface treatment equipment and method for semiconductor device

Abstract

The invention relates to the technical field of semiconductor laser chip surface treatment, and discloses a semiconductor device surface treatment device and method, the surface treatment device comprises a vacuum cavity, a light source irradiation device, a clamp and a control device; the vacuum cavity is provided with a containing space and a window, the clamp is located in the containing space and used for fixing at least one semiconductor laser chip to be processed, and the cleavage cavity face of the semiconductor laser chip faces the window; the light source irradiation device comprises a light source and a temperature detection assembly, the light source is arranged on the outer side of the window, the temperature detection assembly is used for detecting the temperature of the cleavage cavity surface, and photon energy corresponding to the light source is larger than the maximum forbidden bandwidth of the semiconductor laser chip; the control device is used for turning on the light source and adjusting the output power of the light source based on the temperature, detected by the temperature detection assembly, of the cleavage cavity surface so that the temperature of the cleavage cavity surface can be at the target temperature. According to the invention, the situation that the core part of the semiconductor laser chip loses efficacy due to high temperature can be improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor laser chip surface treatment, and in particular to a surface treatment device and method for a semiconductor device. Background Art

[0002] Compound semiconductor laser chips such as II-VI and III-V have the advantages of wide wavelength range, high output power and good beam quality, and can be used in optical communication, laser processing and image display. In the semiconductor laser process, especially after the semiconductor laser chip is cleaved, the cleavage cavity surface exposed to the air will absorb a large amount of organic matter and water, and oxidation will also occur. Compounds such as II-O, VI-O, III-O and VO form a large number of defects on the cleavage cavity surface of the semiconductor laser chip, which may cause the semiconductor laser chip to fail. Therefore, it is necessary to perform surface treatment on the cleavage cavity surface of the semiconductor laser chip.

[0003] The surface treatment process is to remove these organic pollutants and defects through physical bombardment, chemical reaction and other treatment methods. This process is usually accompanied by heating the treated surface. High temperature can increase the activity of surface organic matter, oxides and other pollution and defects. Generally, the higher the surface temperature, the more beneficial it is to the treatment effect.

[0004] However, the currently commonly used infrared radiation heating method will cause the core parts of the semiconductor laser chip (such as quantum wells, etc.) to be in a high temperature state, which may cause irreversible damage to the core parts of the semiconductor laser chip, such as over-alloying of metal electrodes and defect diffusion. Summary of the invention

[0005] In view of this, the present invention provides a surface treatment device and method for a semiconductor device to improve the problem of failure of the core part of a semiconductor laser chip due to high temperature caused by heating in an infrared radiation manner.

[0006] In the first aspect, the present invention provides a surface treatment device for a semiconductor device, the surface treatment device comprising a vacuum chamber, a light source irradiation device, a clamp and a control device; the vacuum chamber has a containing space and a window, the clamp is located in the containing space, the clamp is used to fix at least one semiconductor laser chip to be processed, and the cleavage cavity surface of the semiconductor laser chip faces the window; the light source irradiation device comprises a light source and a temperature detection component, the light source is arranged on the outside of the window, the temperature detection component is used to detect the temperature of the cleavage cavity surface, the photon energy corresponding to the light source is greater than the maximum bandgap width of the semiconductor laser chip; the control device is used to turn on the light source to irradiate the cleavage cavity surface, and is used to adjust the output power of the light source based on the temperature of the cleavage cavity surface detected by the temperature detection component, so that the temperature of the cleavage cavity surface is at the target temperature.

[0007] In this embodiment, by irradiating the cleavage cavity surface with a light source whose photon energy is greater than the maximum bandgap width of the semiconductor laser chip, the temperature rise of other areas of the semiconductor laser chip except the cavity surface can be reduced, which can not only improve the surface treatment effect, but also improve the situation where the core part of the semiconductor laser chip fails due to high temperature.

[0008] In an optional embodiment, the wavelength of the light source is less than 800 nm.

[0009] In an optional embodiment, the wavelength of the light source is smaller than the wavelength of ultraviolet light, and the surface treatment equipment further includes a surface treatment device, wherein the surface treatment device and the light source irradiation device are located on the same side of the cleavage cavity surface; the surface treatment device includes a surface treatment gas source, and the surface treatment gas source is arranged on the outside of the window; the control device is also used to open the surface treatment gas source when the temperature of the cleavage cavity surface is at a target temperature, so as to remove contaminants on the cleavage cavity surface based on a photochemical reaction.

[0010] In this embodiment, short-wavelength (wavelength below 800nm) light irradiation is adopted, that is, a light source with photon energy greater than the maximum bandgap width of the semiconductor laser chip is selected for light irradiation, which may only involve surface heating and surface photochemistry. It can not only enable the cleavage cavity surface to obtain a very high temperature (target temperature), which is beneficial to remove organic pollution and oxides through surface treatment and photochemical reaction, but also enable the temperature of the main area (core area) of the semiconductor laser chip to be lower, thereby avoiding damage to the metal electrodes and other material structures.

[0011] In an optional embodiment, the surface treatment gas source includes a plasma source and / or a reducing hydrogen atom source.

[0012] In an optional embodiment, the light source irradiation device also includes a lens assembly and a charge-coupled device imaging assembly; the lens assembly is used to adjust the size and position of the light spot generated by the light source; the charge-coupled device imaging assembly is used to collect image information of the window, and the control device is also used to determine the position of the cleavage cavity surface in the accommodating space based on the image information.

[0013] In an optional embodiment, the surface treatment equipment also includes a surface coating device; the surface coating device includes a passivation material evaporation source, and the passivation material evaporation source is arranged on the outside of the window; the control device is also used to turn on the passivation material evaporation source after the temperature of the cleavage cavity surface reaches the target temperature, so as to evaporate a passivation protective film layer on the cleavage cavity surface.

[0014] In this embodiment, after removing the contaminants on the cleavage cavity surface, the passivation material evaporation source is turned on, and a passivation protective film layer is evaporated on the cleavage cavity surface after the contaminants are removed to isolate the cavity surface from the external environment and prevent water vapor, oxygen, etc. from corroding the cavity surface, thereby improving the stability and service life of the laser.

[0015] In an optional embodiment, the surface treatment equipment further includes a heat dissipation device, and the heat dissipation device is connected to the clamp.

[0016] In this embodiment, the heat dissipation device is used to dissipate heat laterally for the heated semiconductor laser chip, thereby preventing the temperature of the main body region of the semiconductor laser chip from being too high.

[0017] In an optional embodiment, the thermal conductivity of the clamp is greater than or equal to 200 W / (m·K).

[0018] In a second aspect, the present invention provides a surface treatment method for a semiconductor device, which is applied to a control device of a surface treatment equipment for a semiconductor device according to the first aspect or any corresponding embodiment thereof, and the surface treatment method comprises: turning on a light source to irradiate a cleavage cavity surface of a semiconductor laser chip to be processed with light; and adjusting the output power of the light source based on the temperature of the cleavage cavity surface detected by a temperature detection component so that the temperature of the cleavage cavity surface is at a target temperature.

[0019] In this embodiment, the cleavage cavity surface of the semiconductor laser chip is heated by a short-wavelength light source, so that the temperature rise of other areas of the semiconductor laser chip except the cavity surface can be reduced, thereby improving the failure of the core part of the semiconductor laser chip due to high temperature.

[0020] In an optional embodiment, the surface treatment method further comprises: when the temperature of the cleavage cavity surface is at a target temperature, opening a surface treatment gas source to remove pollutants on the cleavage cavity surface based on a photochemical reaction. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the related technologies, the drawings required for use in the specific embodiments or the related technical descriptions will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 is a structural block diagram of a surface treatment device for a semiconductor device according to an embodiment of the present invention; Figure 2 is a schematic diagram of a photon heating cycle of a semiconductor surface material according to an embodiment of the present invention; Figure 3 is a schematic diagram of the irradiation heating effect of a light source according to an embodiment of the present invention; Figure 4 is a structural block diagram of another surface treatment device for a semiconductor device according to an embodiment of the present invention; Figure 5 The figure is a schematic flow chart of a surface treatment method of a semiconductor device according to an embodiment of the present invention.

[0023] Figure numerals: 110, vacuum chamber; 111, accommodating space; 112, window; 120, light source irradiation device; 121, light source; 122, lens assembly; 130, fixture; 140, control device; 150, surface treatment device; 151, surface treatment gas source; 160, surface coating device; 161, passivation material evaporation source; 200, semiconductor laser chip; 201, irradiation strong absorption area; 210, cleavage cavity surface. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. According to the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0025] The present invention provides a surface treatment device and method for a semiconductor device, which heats the cleavage cavity surface of a semiconductor laser chip by a short-wavelength (wavelength less than 800nm) light source, thereby increasing the temperature of the semiconductor laser chip cavity surface during surface treatment, and can reduce the temperature rise of other areas of the semiconductor laser chip except the cavity surface, thereby improving the situation where the core part of the semiconductor laser chip fails due to high temperature.

[0026] Firstly, the surface treatment equipment for semiconductor devices provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0027] like Figure 1 As shown, the surface treatment equipment for semiconductor devices includes a vacuum chamber 110 , a light source irradiation device 120 , a fixture 130 and a control device 140 .

[0028] The vacuum chamber 110 has a receiving space 111 and a window 112 . The fixture 130 is located in the receiving space 111 . The fixture 130 is used to fix at least one semiconductor laser chip 200 to be processed, and the cleavage cavity surface 210 of the semiconductor laser chip 200 to be processed faces the window 112 .

[0029] Specifically, when the number of semiconductor laser chips 200 to be processed is multiple, Figure 1 As shown, a plurality of semiconductor laser chips 200 to be processed may be stacked in sequence and then fixed on the fixture 130. The cleavage cavity surfaces 210 of the stacked plurality of semiconductor laser chips 200 to be processed are located on the same side.

[0030] The cleavage cavity surface 210 refers to a cavity surface with specific functions and effects formed on the chip through a cleavage process, and may correspond to the front cavity surface and the back cavity surface of the semiconductor laser chip 200. Figure 1 In the embodiment, the left side surface and the right side surface of the semiconductor laser chip 200 to be processed are cleavage cavity surfaces.

[0031] The vacuum chamber 110 may refer to a chamber that provides a vacuum environment for the semiconductor laser chip 200 to be processed. The fixture 130 may be fixedly arranged on the chamber wall of the chamber by a fixing component. After the semiconductor laser chip 200 to be processed is fixed on the fixture 130, the chamber having the accommodating space 111 and the window 112 may be evacuated (for example, the vacuum degree P < 1E - 9 torr), forming a vacuum chamber 110.

[0032] The window 112 can be made of transparent materials such as optical glass or quartz glass, so that the light generated by the light source irradiation device 120 can enter the accommodation space 111 to irradiate the surface of the semiconductor laser chip 200 to be processed.

[0033] Exemplarily, the fixture 130 may be a mechanical fixture or a vacuum adsorption fixture, etc., and the present invention does not make any specific limitation thereto, as long as the semiconductor laser chip 200 can be fixed in the accommodation space.

[0034] The light source irradiation device 120 includes a light source 121 and a temperature detection component (not shown in the figure), the light source 121 is arranged outside the window 112, and the temperature detection component is used to detect the temperature of the cleavage cavity surface 210. The photon energy corresponding to the light source 121 is greater than the maximum bandgap width of the semiconductor laser chip 200 to be processed. That is, the wavelength of the light source in the light source irradiation device 120 is relatively short (for example, the wavelength of the light source is less than 800nm).

[0035] The semiconductor laser chip 200 is generally made of more than one material. The maximum bandgap width refers to the maximum value of the bandgap widths corresponding to the various materials of the semiconductor laser chip 200. The bandgap width refers to the energy difference between the top of the valence band and the bottom of the conduction band in the semiconductor material, and the unit is electron volt (eV).

[0036] For example, for a typical 915nm semiconductor laser chip material, the optional light source wavelength can be determined as shown in Table 1 according to its material band gap (bandgap width).

[0037] Table 1

[0038] Specifically, when the semiconductor laser chip 200 to be processed is a typical 915 nm semiconductor laser chip, as shown in Table 1, the wavelength of the light source may be green light, blue light, purple light, ultraviolet light or far ultraviolet light.

[0039] Exemplarily, the light source 121 may be an edge-emitting laser, a surface-emitting laser, or an LED light source, and the temperature detection component may be a temperature measuring element such as an infrared imaging thermometer or a temperature sensor.

[0040] Specifically, the light source 121 can be fixed on the outside of the window 112 by a fixing component, and the setting position of the temperature detection component is determined based on the type of the temperature detection component. For example, if the temperature detection component is an infrared imaging thermometer, the temperature detection component can also be set on the outside of the window 112; if the temperature detection component is a temperature sensor, the temperature detection component can be set on the cleavage cavity surface 210.

[0041] The control device 140 is used to turn on the light source 121 to irradiate the cleavage cavity surface 210 with light, and to adjust the output power of the light source 121 based on the temperature of the cleavage cavity surface 210 detected by the temperature detection component so that the temperature of the cleavage cavity surface 210 is at a target temperature.

[0042] Exemplarily, the control device 140 may be a processor or a computer or other device including a processor.

[0043] After the control device 140 obtains the temperature value from the temperature detection component, it can adjust the output power of the light source 121 based on the corresponding relationship between temperature and output power until the temperature value detected by the temperature detection component is the target temperature. The corresponding relationship between temperature and output power can be determined based on experiments, and the target temperature can be set by the designer according to the requirements of surface treatment.

[0044] Specifically, when the surface of the semiconductor laser chip 200 to be processed is heated by the surface processing equipment of the semiconductor device, at least one semiconductor laser chip 200 to be processed can be first arranged in sequence and fixed on the fixture 130, and the fixture 130 can be fixedly set in the cavity, so that the cleavage cavity surface 210 of the at least one semiconductor laser chip 200 to be processed faces the window, and the cavity is evacuated to form a vacuum cavity 110. Then, the control device 140 turns on the light source 121 in the light source irradiation device 120 in response to the operation of the staff, and the light generated by the light source 121 irradiates the cleavage cavity surface 210.

[0045] After the cleavage cavity surface 210 of the semiconductor laser chip 200 receives light, the semiconductor material can quickly absorb photons larger than its bandgap width due to its energy band characteristics. The surface of the semiconductor material quickly absorbs the photon energy, and the surface material temperature rises rapidly. Furthermore, because the bandgap width of the semiconductor material decreases with the increase of temperature, that is, the difference between the photon energy and the bandgap width is greater, more heat absorption can be generated, thereby forming a Figure 2 The cycle greatly increases the surface temperature of the semiconductor, which is beneficial to surface treatment. At the same time, the temperature of other areas of the semiconductor laser chip except the cavity surface is not irradiated by photons, and the temperature rise is small, ensuring that the semiconductor material does not change.

[0046] Among them, the irradiation heating effect of the light source can be as follows Figure 3 As shown, the penetrability of the wavelength of the light source selected in the light source irradiation device 120 is shorter than that of long-wavelength infrared light (above 1000nm). When the light source is used for surface heating, the range of the irradiated strong absorption zone 201 is narrow, which can avoid the core area of ​​the semiconductor laser chip from being too high when the surface layer temperature of the semiconductor laser chip close to the cleavage cavity surface is high.

[0047] Moreover, during the above-mentioned heating process, the temperature detection component can monitor the temperature of the cleavage cavity surface, the control device obtains the detected temperature value from the temperature detection component, and adjusts the output power of the light source based on the temperature value until the temperature of the cleavage cavity surface 210 of the semiconductor laser chip is at the target temperature.

[0048] In this embodiment, by irradiating the cleavage cavity surface with a light source whose photon energy is greater than the maximum bandgap width of the semiconductor laser chip, the temperature rise of other areas of the semiconductor laser chip except the cavity surface can be reduced, which can not only improve the surface treatment effect, but also improve the situation where the core part of the semiconductor laser chip fails due to high temperature.

[0049] For example, Figure 4 As shown, the light source irradiation device 120 may further include a lens assembly 122 and a charge coupled device (CCD) imaging assembly (not shown in the figure).

[0050] Specifically, the lens assembly 122 is used to adjust the size and position of the light spot generated by the light source 121 so that the device can match semiconductor laser chips of different sizes. The charge coupled device imaging assembly is used to collect image information of the window 112 area, and the control device 140 is also used to determine the position of the cleavage cavity surface 210 in the accommodation space 111 based on the image information.

[0051] In this embodiment, the surface treatment equipment also includes a moving device. After the semiconductor laser chip 200 to be processed is fixed in the vacuum chamber 110, the control device 140 can determine the position of the cleavage cavity surface 210 in the accommodating space 111 through the automatic recognition and alignment device of the charge coupled device imaging component, and then the control device can move the position of the light source through the moving device, so that the light generated by the light source 121 passes through the lens assembly 122 and the window 112, and then accurately irradiates the cleavage cavity surface 210 of the semiconductor laser chip 200 to be processed.

[0052] The method of determining the position of the target area (ie, the cleavage cavity surface 210 ) based on the collected image information may be a target detection and recognition method in conventional image processing in the art, which will not be described here.

[0053] In some embodiments, Figure 4 As shown, the wavelength of the light source is shorter than the wavelength of ultraviolet light, and the surface treatment equipment further includes a surface treatment device 150, which includes a surface treatment gas source 151, and the surface treatment gas source 151 is arranged outside the window 112. The control device 140 is also used to turn on the surface treatment gas source 151 when the temperature of the cleavage cavity surface 210 is at the target temperature, so as to remove the contaminants on the cleavage cavity surface 210 based on the photochemical reaction.

[0054] The surface treatment device and the light source irradiation device are located on the same side of the cleavage cavity surface, for example Figure 4 As shown, the surface treatment device and the light source irradiation device are both arranged on the left side of the cleavage cavity surface.

[0055] Specifically, the conventional radiation heating device is generally a filament structure, which must be close to the surface to be heated during heating. In order to avoid affecting the surface treatment device to treat the contaminants on the surface to be heated, the conventional radiation heating device is generally arranged on the back of the cleavage cavity surface, and cannot be arranged on the same side as the surface treatment device. Compared with the conventional radiation heating device, the light source irradiation device in this embodiment can also achieve a good heating effect away from the surface of the heated material, and the surface to be treated of the surface treatment device and the light source irradiation (heating / photochemical reaction) surface can be the same surface.

[0056] The surface treatment device 150 can remove organic pollution, oxides, etc. on the high-temperature surface by means of plasma physical bombardment, chemical reduction combined with reducing gas, and auxiliary photochemical reaction processes.

[0057] Exemplarily, the surface treatment gas source 151 includes a plasma source and / or a reducing hydrogen atom source.

[0058] In the above heating process, combined with plasma or atomic hydrogen, a photochemical reaction is carried out simultaneously. The absorption of short-wave photons produces electronic energy transitions, forming unstable excited states, which can allow the oxides on the cleavage cavity surface of the semiconductor laser chip, such as arsenic phosphide indium gallium aluminum oxide (O-AsPInGaAl) and organic oxides (RO-R'), to be reduced with hydrogen atoms or ions to remove oxygen atoms on the surface.

[0059] Specifically, the reaction is to excite the chemical bonds in the oxide molecules to a high-energy state through high-energy photons such as ultraviolet light or violet light, and then dissociate the excited molecules in the high-energy state into two or more molecules, atoms or free radicals, decomposing the organic pollution, usually by breaking and decomposing the oxide bonds.

[0060] Among them, the process of inorganic oxide excitation dissociation is: O-AsPInGaAl+2H+photon energy (hv)→AsPInGaAl+H2O; the process of organic oxide excitation dissociation is: RO-R'+2H+hv→R+R'+H2O.

[0061] In this embodiment, short-wavelength (wavelength below 800nm) light irradiation is adopted, that is, a light source with photon energy greater than the maximum bandgap width of the semiconductor laser chip is selected for light irradiation, which may only involve surface heating and surface photochemistry. It can not only enable the cleavage cavity surface to obtain a very high temperature (target temperature), which is beneficial to remove organic pollution and oxides through surface treatment and photochemical reaction, but also enable the temperature of the main area (core area) of the semiconductor laser chip to be lower, thereby avoiding damage to the metal electrodes and other material structures.

[0062] For example, Figure 4As shown, the surface treatment device further includes a surface coating device 160, which includes a passivation material evaporation source 161, and the passivation material evaporation source 161 is arranged outside the window 112. The control device is also used to turn on the passivation material evaporation source 161 after the temperature of the cleavage cavity surface 210 is at the target temperature, so as to evaporate the passivation protective film layer on the cleavage cavity surface 210.

[0063] For example, the passivation material may be sulfide, selenide, or nitride.

[0064] In this embodiment, after removing the contaminants on the cleavage cavity surface, the passivation material evaporation source 161 is turned on, and a passivation protective film layer is evaporated on the cleavage cavity surface 210 after the contaminants are removed to isolate the cavity surface from the external environment and prevent water vapor, oxygen, etc. from corroding the cavity surface, thereby improving the stability and service life of the laser.

[0065] In some optional embodiments, the surface treatment device may further include a heat sink connected to the fixture to dissipate heat laterally for the heated semiconductor laser chip to prevent the temperature of the main area of ​​the semiconductor laser chip from being too high.

[0066] Exemplarily, the thermal conductivity of the fixture is greater than or equal to 200 W / (m·K), which increases the speed of heat conduction to the heat dissipation state, thereby improving the heat dissipation effect. In this embodiment, the fixture can be a fixture made of a metal material with high thermal conductivity, such as copper.

[0067] In this embodiment, a surface treatment method for a semiconductor device is also provided, which can be used in a control device for a surface treatment device for a semiconductor device provided in any of the above embodiments. Figure 5 is a schematic flow chart of a surface treatment method for a semiconductor device according to an embodiment of the present invention. Figure 5 As shown, the method comprises the following steps: Step S501 , turning on the light source to irradiate the cleavage cavity surface of the semiconductor laser chip to be processed.

[0068] Specifically, the control device can turn on the light source based on the instruction message, so that the light generated by the light source irradiates the cleavage cavity surface of the semiconductor laser chip to be processed. The instruction message can come from a user or from an electronic device.

[0069] Step S502, based on the temperature of the cleavage cavity surface detected by the temperature detection component, adjust the output power of the light source to make the temperature of the cleavage cavity surface at a target temperature.

[0070] Specifically, after the control device obtains the temperature value from the temperature detection component, it can adjust the output power of the light source based on the corresponding relationship between temperature and output power until the temperature value detected by the temperature detection component is the target temperature.

[0071] The corresponding relationship between temperature and output power can be determined based on experiments, and the target temperature can be set by the designer according to the requirements of surface treatment.

[0072] In this embodiment, the cleavage cavity surface of the semiconductor laser chip is heated by a short-wavelength light source, so that the temperature rise of other areas of the semiconductor laser chip except the cavity surface can be reduced, thereby improving the failure of the core part of the semiconductor laser chip due to high temperature.

[0073] In some optional embodiments, when the temperature of the cleavage chamber surface is at the target temperature, the control device may turn on the surface treatment gas source to remove contaminants on the cleavage chamber surface based on a photochemical reaction.

[0074] Furthermore, after the temperature of the cleavage cavity surface reaches the target temperature, the control device may also turn on the passivation material evaporation source to evaporate a passivation protection film layer on the cleavage cavity surface.

[0075] For example, Figure 4 Taking the surface treatment equipment of the semiconductor device shown in the figure as an example, the surface treatment method of the semiconductor device provided by the present invention is described in detail.

[0076] Specifically, when the semiconductor laser chip needs to be surface treated, the semiconductor laser chips 200 to be treated are first arranged in sequence and fixed on a high thermal conductivity (thermal conductivity greater than 200 W / (m·K)) fixture 130, and then the high thermal conductivity fixture 130 is fixedly arranged in the vacuum chamber 110 and connected to the heat dissipation device. The light source irradiation device 120 is fixed on the outside of the window 112, and the surface treatment device 150 and the surface coating device 160 are also fixed on the same side.

[0077] Afterwards, the cavity is evacuated to a vacuum degree P < 1E-9 torr. After the vacuum cavity 110 is formed, the automatic recognition and alignment device of the CCD imaging component is used to determine the target range that needs to be irradiated by the light source (ie, the position of the cleavage cavity surface).

[0078] Then, the control device 140 adjusts the position of the light source 121 based on the determined position of the cleavage cavity surface 210. After the adjustment, the light source 121 is turned on. The light waves generated by the light source 121 irradiate the cleavage cavity surface 210 through the lens assembly 122. At the same time, the control device 140 adjusts the output power of the light source through the temperature feedback of the infrared imaging thermometer, so that the cavity surface of the semiconductor laser chip 200 (i.e., the cleavage cavity surface) reaches a specified high temperature (i.e., the target temperature).

[0079] When the cavity surface reaches a specified high temperature, the surface treatment device 150 is turned on to generate a plasma source and a reducing hydrogen atom source, and the organic contamination on the cavity surface of the semiconductor laser chip 200 is removed by high temperature and photochemical reaction.

[0080] After that, the light source irradiation device 120 and the surface treatment device 150 stop working, and the surface coating device 160 is turned on to evaporate a layer of passivation protective film material on the cleaned cavity surface. After the evaporation is completed, the surface coating device 160 is closed, and the processed high thermal conductivity fixture 130 and the semiconductor laser chip 200 on the high thermal conductivity fixture 130 are taken out, and the next processing process can be carried out.

[0081] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "horizontal", "top", "bottom", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0082] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0083] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiment, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0084] In the description of this specification, the description with reference to the terms "this embodiment", "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0085] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0086] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the present invention.

Claims

1. A surface treatment device for a semiconductor device, characterized in that: The surface treatment equipment includes a vacuum chamber, a light source irradiation device, a fixture and a control device; The vacuum chamber has a containing space and a window, the fixture is located in the containing space, the fixture is used to fix at least one semiconductor laser chip to be processed, and the cleavage cavity surface of the semiconductor laser chip faces the window; The light source irradiation device comprises a light source and a temperature detection component, wherein the light source is arranged outside the window, the temperature detection component is used to detect the temperature of the cleavage cavity surface, and the photon energy corresponding to the light source is greater than the maximum bandgap width of the semiconductor laser chip; The control device is used to turn on the light source to irradiate the cleavage cavity surface with light, and to adjust the output power of the light source based on the temperature of the cleavage cavity surface detected by the temperature detection component so that the temperature of the cleavage cavity surface is at a target temperature.

2. The surface treatment equipment according to claim 1, characterized in that: The wavelength of the light source is less than 800 nm.

3. The surface treatment equipment according to claim 1, characterized in that: The wavelength of the light source is shorter than the wavelength of ultraviolet light, and the surface treatment equipment further comprises a surface treatment device, wherein the surface treatment device and the light source irradiation device are located on the same side of the cleavage cavity surface; The surface treatment device comprises a surface treatment gas source, and the surface treatment gas source is arranged outside the window; The control device is also used to open the surface treatment gas source when the temperature of the cleavage cavity surface is at a target temperature, so as to remove pollutants on the cleavage cavity surface based on a photochemical reaction.

4. The surface treatment equipment according to claim 3, characterized in that: The surface treatment gas source includes a plasma source and / or a reducing hydrogen atom source.

5. The surface treatment equipment according to any one of claims 1 to 4, characterized in that: The light source irradiation device also includes a lens assembly and a charge coupled device imaging assembly; The lens assembly is used to adjust the size and position of the light spot generated by the light source; The charge coupled device imaging component is used to collect image information in the window, and the control device is also used to determine the position of the cleavage cavity surface in the accommodation space based on the image information.

6. The surface treatment device according to any one of claims 1 to 4, characterized in that: The surface treatment equipment also includes a surface coating device; The surface coating device comprises a passivation material evaporation source, and the passivation material evaporation source is arranged outside the window; The control device is also used to turn on the passivation material evaporation source after the temperature of the cleavage cavity surface reaches the target temperature, so as to evaporate a passivation protection film layer on the cleavage cavity surface.

7. The surface treatment device according to any one of claims 1 to 4, characterized in that: The surface treatment equipment further comprises a heat dissipation device, and the heat dissipation device is connected to the clamp.

8. The surface treatment equipment according to claim 7, characterized in that: The thermal conductivity of the fixture is greater than or equal to 200 W / (m·K).

9. A surface treatment method for a semiconductor device, characterized in that: A control device for a surface treatment equipment for a semiconductor device according to any one of claims 1 to 8, wherein the surface treatment method comprises: Turning on the light source to irradiate the cleavage cavity surface of the semiconductor laser chip to be processed; Based on the temperature of the cleavage cavity surface detected by the temperature detection component, the output power of the light source is adjusted to make the temperature of the cleavage cavity surface at a target temperature.

10. The surface treatment method according to claim 9, characterized in that: The surface treatment method further comprises: When the temperature of the cleavage cavity surface is at a target temperature, a surface treatment gas source is turned on to remove pollutants on the cleavage cavity surface based on a photochemical reaction.

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