System and process for treating surface defects of composite current collector, and composite current collector

Abstract

The present disclosure provides a system and process for treating surface defects of a composite current collector, as well as a composite current collector, and belongs to the field of battery materials. The system for treating surface defects of a composite current collector includes a physical vapor deposition device and a tubular Hall ion source. The tubular Hall ion source is installed on the physical vapor deposition device and is used to generate plasma during the physical vapor deposition process of preparing the composite current collector. After the gaseous evaporation source material is deposited on the surface of the substrate, the plasma is emitted to the surface of the composite current collector, so that the surface defects are peeled off from the composite current collector. The tubular Hall ion source disclosed in the present disclosure is an auxiliary component of the physical vapor deposition device, which does not require additional equipment investment, reduces costs, reduces product production flow procedures, simplifies steps, and realizes large-scale production; and can accurately locate and reduce surface defects. It solves the technical problems such as the difficulty of the existing process, the complex production flow procedures, and the high cost; the inability to accurately locate and eliminate surface defects of the composite current collector.

Description

Technical Field

[0001] The present disclosure relates to the field of battery materials, and in particular, to a system and process for processing surface defects of a composite current collector, and a composite current collector. Background Art

[0002] With the rapid development of new energy lithium batteries, lithium battery current collectors need to meet higher and higher performance requirements. In order to improve the performance of current collectors, new composite current collectors for lithium battery current collectors have emerged in recent years. They are obtained by evaporating metal layers such as copper or aluminum on the surface of polymer substrates using physical vapor deposition (PVD). However, in the evaporation process of preparing composite current collectors, the amount of metal wire melting and evaporation per unit time increases at a geometric rate, which causes serious aluminum / copper splashing, resulting in a large number of surface defects in the composite current collector, affecting the appearance and performance of the composite current collector, and hindering the increase in the output of the composite current collector; when the composite current collector is used in lithium batteries, it will also reduce the performance and service life of the lithium battery. Therefore, reducing the height of the surface defects of the composite current collector is crucial to improving the comprehensive performance of the composite current collector.

[0003] At present, the methods for reducing the height of surface defects of composite current collectors mainly include roller pressing and air knife: roller pressing is a process that uses mechanical extrusion force to reduce the height of surface defects. This process is currently the mainstream method for reducing the height of surface defects of composite current collectors and the process is mature; air knife is a process that converts compressed air into an impact air curtain to eliminate surface defects. This process is still in the experimental stage and has not been used in production. However, roller pressing requires that the product prepared by the front-end PVD evaporation process has a lower surface defect density, which increases the difficulty of the process, and requires equipment investment in the roller press in the early stage, which increases the flow process and cost of product production; the existing air knife cannot accurately locate and eliminate the surface defects of the composite current collector without causing damage to the composite current collector.

[0004] Therefore, it is a technical problem that needs to be solved urgently to propose a system and process for treating surface defects of a composite current collector to solve or at least alleviate at least one technical problem existing in the above existing methods. Summary of the invention

[0005] In view of the above-mentioned technical problems, the present disclosure provides a system and process for processing surface defects of a composite current collector, as well as a composite current collector, which can accurately locate and eliminate surface defects of the composite current collector without causing damage to the composite current collector, thereby greatly reducing the average height of the surface defects; and does not require additional equipment investment, reducing the flow process and cost of product production.

[0006] According to a specific embodiment of the present disclosure, in a first aspect, the present disclosure provides a system for processing surface defects of a composite current collector, comprising a physical vapor deposition device and a tubular Hall ion source, wherein the tubular Hall ion source is installed on the physical vapor deposition device, and the tubular Hall ion source is used to generate plasma during the physical vapor deposition process for preparing a composite current collector, and after the gaseous evaporation source material is deposited onto the surface of the substrate, the plasma is emitted to the surface of the composite current collector, so that the surface defects are peeled off from the composite current collector.

[0007] Furthermore, the tubular Hall ion source is a BMB (Bombard) tubular Hall ion source.

[0008] Furthermore, the number of BMB tube cores of the BMB tubular Hall ion source is 1-12 groups.

[0009] Furthermore, the physical vapor deposition equipment is a vacuum evaporation equipment.

[0010] According to a specific embodiment of the present disclosure, in a second aspect, the present disclosure provides a process for treating surface defects of a composite current collector, comprising the following steps:

[0011] Step (S1), providing any system for treating surface defects of a composite current collector as described above, placing a substrate in a vacuum chamber of the physical vapor deposition equipment, and placing an evaporation source material in an evaporation source; and

[0012] Step (S2), turning on the physical vapor deposition equipment and the tubular Hall ion source, the evaporation source material evaporates, and after the gaseous evaporation source material is deposited on the surface of the substrate, the plasma generated by the tubular Hall ion source is emitted to the surface of the composite current collector to eliminate surface defects on the composite current collector.

[0013] Furthermore, the tubular Hall ion source is a BMB tubular Hall ion source, and the output power of a single set of BMB tube cores is 300-3000W.

[0014] Furthermore, the ventilation flow rate of the ionized gas corresponding to the single-tube BMB core of the BMB tubular Hall ion source is 200-4000 sccm.

[0015] Furthermore, the ionization gas of the BMB tubular Hall ion source is argon, oxygen or a mixed gas of argon and oxygen.

[0016] Furthermore, the number of BMB tube cores is 8-10 groups, the output power of each group is 300-375W, the ionized gas is argon, and the ventilation flow rate of argon corresponding to a single BMB tube core is 200-250sccm.

[0017] According to a specific embodiment of the present disclosure, in a third aspect, the present disclosure provides a composite current collector, which is treated for surface defects using any of the aforementioned surface defect treatment processes for the composite current collector.

[0018] Furthermore, the average height of the surface defects of the composite current collector is less than or equal to 100 μm.

[0019] Compared with the prior art, the above technical solution provided by the present disclosure has at least the following beneficial effects: the tubular Hall ion source provided by the present disclosure, as an auxiliary component of the physical vapor deposition equipment, does not require additional equipment investment, reduces costs, reduces the circulation process of product production, simplifies the steps, and is conducive to large-scale production; using the principle of "surface defects preferentially enrich plasma", the plasma produces "tip discharge" at the surface defects, thereby accurately locating and reducing surface defects. The BMB tubular Hall ion source is a special tubular Hall ion source. Compared with the traditional tubular Hall ion source, it has the advantages of higher ion beam current density, wider ion energy range, better ion beam uniformity and gas compatibility, and can accurately control gas parameters. The present disclosure adjusts the plasma density and distribution by controlling the number of tube cores, output power, ionization gas type, ventilation flow rate, etc. of the BMB tubular Hall ion source to eliminate the surface defects of the composite current collector, and achieves good results. Without causing any damage to the composite current collector, the average height of the surface defects can be controlled to be less than or equal to 100μm. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0021] Figure 1 A schematic diagram of a partial structure of a system for processing surface defects of a composite current collector provided in an embodiment of the present disclosure;

[0022] Figure 2 A schematic cross-sectional structure diagram of a BMB (Bombard) tubular Hall ion source provided in an embodiment of the present disclosure;

[0023] Figure 3 A schematic diagram of the three-dimensional structure of a BMB tubular Hall ion source provided in an embodiment of the present disclosure;

[0024] Figure 4 A flow chart of a process for treating surface defects of a composite current collector provided in an embodiment of the present disclosure.

[0025] The reference numerals in the specific implementation manner are as follows:

[0026] System 1 for treating surface defects of composite current collector;

[0027] Physical vapor deposition (PVD) equipment 10 , vacuum chamber 101 , evaporation source 102 ; tubular Hall ion source 20 , BMB tubular Hall ion source 30 , BMB tube core 31 . DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0030] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a product or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such product or device. In the absence of more restrictions, the elements defined by the sentence "comprises a" do not exclude the presence of other identical elements in the product or device including the elements.

[0031] In the description of the embodiments of the present disclosure, the orientation or positional relationship indicated by the technical terms "upper", "lower", "thickness", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the embodiments of the present disclosure and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present disclosure.

[0032] In the description of the embodiments of the present disclosure, the term "and / or" is used only to describe the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0033] In the description of the embodiments of the present disclosure, the symbol “-” represents the two endpoint data before and after the “-” and all data between the two endpoints. For example, AB represents all data greater than or equal to A and less than or equal to B.

[0034] Reference to "embodiments" in this disclosure means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the disclosure. The appearance of the phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in this disclosure may be combined with other embodiments.

[0035] At present, the methods for reducing the height of defects in composite current collectors mainly include roller pressing and air knife: roller pressing is a process that uses mechanical extrusion force to reduce the height of surface defects. This process is currently the mainstream method for reducing the height of defects in composite current collectors; air knife is a process that converts compressed air into an impact air curtain to eliminate surface defects. This process is still in the experimental stage and has not been used in production. However, roller pressing requires that the products prepared by the front-end physical vapor deposition process have a lower defect density, which increases the process difficulty and reduces the yield rate. In addition, equipment investment in roller presses is required in the early stage, which increases the flow process and cost of product production; air knives cannot accurately locate and eliminate surface defects without damaging the composite current collector.

[0036] After research, the inventors found that the use of tubular Hall ion sources, especially BMB (Bombard) tubular Hall ion sources, can better eliminate the surface defects of the composite current collector. In order to solve or at least alleviate the above-mentioned technical problems existing in the prior art, the tubular Hall ion source disclosed in the present invention is an accessory of the physical vapor deposition (hereinafter referred to as PVD) equipment, which can accurately locate and eliminate the surface defects of the composite current collector during the PVD evaporation process. In particular, the present invention also uses the BMB (Bombard) tubular Hall ion source as an accessory of the PVD vacuum evaporation machine, and adjusts the plasma density and distribution by controlling the number of tube cores, output power, ionization gas type, ventilation flow rate and other means of the BMB tubular Hall ion source, thereby achieving a better effect of eliminating the surface defects of the composite current collector.

[0037] Specifically, an embodiment of the present disclosure provides a system for processing surface defects of a composite current collector, including a physical vapor deposition device and a tubular Hall ion source, wherein the tubular Hall ion source is installed on the physical vapor deposition device, and the tubular Hall ion source is used to generate plasma during the physical vapor deposition process of preparing a composite current collector. After the gaseous evaporation source material is deposited onto the surface of the substrate, the plasma is emitted to the surface of the composite current collector, so that the surface defects are peeled off from the composite current collector.

[0038] In some preferred embodiments, the tubular Hall ion source is a BMB tubular Hall ion source.

[0039] The present disclosure also provides a process for treating surface defects of a composite current collector, comprising the following steps:

[0040] Step (S1), providing any of the aforementioned systems for treating surface defects of a composite current collector, placing a substrate in a vacuum chamber of the physical vapor deposition equipment, and placing an evaporation source material in an evaporation source; and

[0041] Step (S2), turning on the physical vapor deposition equipment and the tubular Hall ion source, evaporating the evaporation source material, and after the gaseous evaporation source material is deposited on the surface of the substrate, the plasma generated by the tubular Hall ion source is emitted to the surface of the composite current collector to eliminate surface defects on the composite current collector.

[0042] In the technical solution disclosed in the present invention, the tubular Hall ion source is an auxiliary component of the PVD deposition equipment, which does not require additional equipment investment, reduces costs, reduces the circulation process of product production, simplifies steps, and is conducive to large-scale production; the principle of "surface defects preferentially enrich plasma" is used to generate "tip discharge", which can accurately locate and eliminate surface defects without causing damage to the composite current collector. The BMB tubular Hall ion source is a special tubular Hall ion source. Compared with the traditional tubular Hall ion source, it has the advantages of higher ion beam current density, wider ion energy range, better ion beam uniformity and gas compatibility, and can accurately control gas parameters. The present invention further adopts the BMB tubular Hall ion source, and by controlling the number of tube cores, output power, ionization gas type, ventilation flow rate, etc. of the BMB tubular Hall ion source to a reasonable range, the plasma density and distribution are coordinated to achieve a better effect of eliminating the surface defects of the composite current collector. The present invention reduces the average height of the surface defects of the composite current collector to less than or equal to 100μm without causing damage to the composite current collector. In addition, the present disclosure has basically no requirements on the surface defect density of the composite current collector obtained by the PVD evaporation process, which reduces the difficulty of the PVD evaporation process and improves the efficiency.

[0043] The optional embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0044] See also Figure 1The first embodiment of the present disclosure provides a system 1 for processing surface defects of a composite current collector, comprising a PVD device 10 and a tubular Hall ion source 20. The tubular Hall ion source 20 is an auxiliary component of the PVD device and is arranged on the PVD device. The PVD device 10 comprises a vacuum chamber 101 and an evaporation source 102. During the process of the gaseous evaporation source material generated by the evaporation source 102 being deposited on the surface of the substrate, the tubular Hall ion source 20 generates plasma. After the gaseous evaporation source material is deposited on the surface of the substrate, the plasma is emitted to the surface of the composite current collector, so that the surface defects are peeled off from the composite current collector, thereby achieving the purpose of eliminating the surface defects.

[0045] The system 1 for processing surface defects of the composite current collector utilizes the principle of "preferential enrichment of plasma by surface defects". A large amount of plasma will be preferentially enriched at the surface defects of the composite current collector, and "tip discharge" will be generated, thereby being able to accurately locate and eliminate the surface defects of the composite current collector without causing damage to the composite current collector.

[0046] The PVD device can be any common PVD device in the field of composite current collector preparation, and can be selected according to actual needs, and it is necessary to ensure that the tubular Hall ion source 20 can be installed on the PVD device as an auxiliary component of the PVD device. In some embodiments, the PVD device 10 is a PVD vacuum evaporator.

[0047] The tubular Hall ion source 20 is used to generate plasma during the process of evaporation source material being deposited onto the substrate. In some preferred embodiments, the tubular Hall ion source 20 is a BMB tubular Hall ion source. Compared with the traditional tubular Hall ion source, the BMB tubular Hall ion source has the advantages of higher ion beam current density, wider ion energy range, better ion beam uniformity and gas compatibility, and can accurately control gas parameters. By controlling the number of tube cores, output power, ionization gas type, ventilation flow rate, etc. of the BMB tubular Hall ion source, the plasma density and distribution are adjusted, and a better effect of eliminating surface defects of the composite current collector can be achieved.

[0048] See also Figure 2 and Figure 3 , respectively, are a cross-sectional structural schematic diagram and a three-dimensional structural schematic diagram of the BMB tubular Hall ion source 30 provided in an embodiment of the present disclosure. The number of BMB tube cores 31 in the BMB tubular Hall ion source 30 may be one group or multiple groups. Preferably, the BMB tubular Hall ion source 30 includes multiple groups of BMB tube cores 31. In some embodiments, the number of BMB tube cores 31 of the BMB tubular Hall ion source 30 is 1-12 groups, and preferably, the number of BMB tube cores 31 of the BMB tubular Hall ion source 30 is 4-10 groups.

[0049] In some embodiments, when the system 1 for treating surface defects of the composite current collector is in working state, the output power of a single group of BMB tube cores 31 of the BMB tube type Hall ion source 30 is preferably, but not limited to, 300-3000W. In some embodiments, when the system 1 for treating surface defects of the composite current collector is in working state, the ventilation flow rate of the ionized gas corresponding to the single tube BMB tube core 31 of the BMB tube type Hall ion source 30 is preferably, but not limited to, 200-4000sccm. In some embodiments, the type of ionized gas of the BMB tube type Hall ion source 30 is preferably, but not limited to, argon, oxygen, or a mixture of argon and oxygen. By controlling the number of tube cores, output power, ionized gas type, ventilation flow rate, etc. of the BMB tube type Hall ion source 30, the plasma density and distribution are adjusted to achieve a better effect of eliminating surface defects of the composite current collector, and the average height of the surface defects of the composite current collector can be reduced to less than or equal to 100μm. In some embodiments, the average height of the surface defects of the composite current collector can be reduced to less than or equal to 60μm.

[0050] See also Figure 4 The second embodiment of the present disclosure provides a process for treating surface defects of a composite current collector, comprising the following steps:

[0051] Step (S1), providing any of the above-mentioned systems 1 for treating surface defects of a composite current collector, placing a substrate in a vacuum chamber 101 of the PVD device 10, and placing an evaporation source material in an evaporation source 102; and

[0052] Step (S2), turning on the PVD equipment 10 and the tubular Hall ion source 20, evaporating the evaporation source material, and after the gaseous evaporation source material is deposited on the surface of the substrate, the plasma generated by the tubular Hall ion source 20 is emitted to the surface of the composite current collector to eliminate surface defects on the composite current collector.

[0053] The system 1 for processing surface defects of a composite current collector in this embodiment includes all the technical features described in the first embodiment, which will not be described again here.

[0054] In step (S1), the substrate and the evaporation source material can be selected from the substrates and evaporation source materials commonly used for composite current collectors in the field of lithium batteries, and are not limited here.

[0055] In some embodiments, the tubular Hall ion source 20 is a BMB tubular Hall ion source 30, and the number of BMB tube cores 31 of the BMB tubular Hall ion source 30 is 1-12 groups, preferably 4-10 groups. In some embodiments, the output power of a single group of BMB tube cores 31 is preferably, but not limited to, 300-3000W. As an example, the output power of a single group of BMB tube cores 31 can be 300W, 500W, 700W, 1000W, 1500W, 2000W, 2300W, 2500W, and 3000W, etc.; it can also be 300-500W, 500-700W, 700-1000W, 1000-1500W, 1500-2000W, 2000-2300W, 2300-2500W, 2500-3000W, etc. In one embodiment, the ventilation flow rate of the ionized gas corresponding to the single-tube BMB core 31 is preferably but not limited to 200-4000sccm. As an example, the ventilation flow rate of the ionized gas corresponding to the single-tube BMB core 31 can be 200sccm, 500sccm, 800sccm, 1000sccm, 1500sccm, 2000sccm, 2500sccm, 3000sccm, 3500sccm, 4000sccm, etc., or it can be 200-500sccm, 500-800sccm, 800-1000sccm, 1000-1500sccm, 1500-2000sccm, 2000-2500sccm, 2500-3000sccm, 3000-3500sccm, 3500-4000sccm, etc. In some embodiments, the ionization gas type of the BMB tubular Hall ion source 30 is preferably, but not limited to, argon, oxygen, or a mixture of argon and oxygen. By controlling the number of tube cores, output power, ionization gas type, ventilation flow rate, etc. of the BMB tubular Hall ion source 30, the plasma density and distribution are adjusted to eliminate the surface defects of the composite current collector, and the average height of the surface defects of the composite current collector can be reduced to less than 100 μm.

[0056] In some preferred embodiments, the number of the BMB tube cores 31 is 8-10 groups, the output power of each group is 300-375W, the ionized gas is argon, and the ventilation flow rate of argon corresponding to a single tube BMB tube core 31 is 200-250sccm, which can reduce the average height of the surface defects of the composite current collector to less than or equal to 60μm.

[0057] The disclosed embodiment also provides a composite current collector, which is treated for surface defects using any of the aforementioned surface defect treatment processes for the composite current collector.

[0058] The average height of the surface defects of the composite current collector is less than or equal to 100 μm, and the influence on the conductivity, mechanical properties and corrosion resistance of the composite current collector is basically negligible, so that the composite current collector has good comprehensive performance, thereby improving the stability, safety and cycle life of the lithium battery. In some preferred embodiments, the average height of the surface defects of the composite current collector is reduced to less than or equal to 60 μm.

[0059] The preparation process, test methods and test data of the embodiments and comparative examples are introduced below:

[0060] Embodiment 1:

[0061] This embodiment uses the composite current collector surface defect treatment system and process to treat the surface defects of the aluminum composite current collector, including the following steps:

[0062] Step (S1), providing a system 1 for treating surface defects of a composite current collector, placing a substrate in a vacuum chamber 101 of the PVD device 10, placing an evaporation source material aluminum in an evaporation source 102, wherein the PVD device 10 is a PVD vacuum evaporation machine, the tubular Hall ion source 20 is a BMB tubular Hall ion source 30, and the number of BMB tube cores 31 in the BMB tubular Hall ion source 30 is 10 groups; and

[0063] Step (S2), turn on the PVD vacuum evaporator and the BMB tubular Hall ion source 30, evaporate the evaporation source material aluminum, and under the process flow DDR18, the gaseous aluminum is deposited on the surface of the substrate to form an aluminum film; the plasma generated by the BMB tubular Hall ion source 30 is emitted to the aluminum film surface of the composite current collector to process the surface defects on the composite current collector, wherein the output power of each group of tube cores 31 is 300W, the ionized gas is argon, and the ventilation flow rate of argon corresponding to the single-tube BMB tube core 31 is 200sccm.

[0064] Detected by CCD algorithm, the average height of surface defects of the treated aluminum composite current collector is 60μm.

[0065] Embodiment 2:

[0066] This embodiment uses the composite current collector surface defect treatment system and process to treat the surface defects of the aluminum composite current collector, including the following steps:

[0067] Step (S1), providing a system 1 for treating surface defects of a composite current collector, placing a substrate in a vacuum chamber 101 of the PVD device 10, placing an evaporation source material aluminum in an evaporation source 102, wherein the PVD device 10 is a PVD vacuum evaporation machine, the tubular Hall ion source 20 is a BMB tubular Hall ion source 30, and the number of BMB tube cores 31 in the BMB tubular Hall ion source 30 is 1 group; and

[0068] Step (S2), turning on the PVD vacuum evaporator and the BMB tubular Hall ion source 30, evaporating the evaporation source material aluminum, and under the process flow DDR18, gaseous aluminum is deposited on the surface of the substrate to form an aluminum film; the plasma generated by the BMB tubular Hall ion source 30 is emitted to the aluminum film surface of the composite current collector to process the surface defects on the composite current collector, wherein the output power of each group of tube cores 31 is 3000W, the ionized gas is oxygen, and the ventilation flow rate of oxygen corresponding to the single-tube BMB tube core 31 is 4000sccm.

[0069] Detected by CCD algorithm, the average height of surface defects of the treated aluminum composite current collector is 100 μm.

[0070] Embodiment 3:

[0071] This embodiment uses the composite current collector surface defect treatment system and process to treat the surface defects of the aluminum composite current collector, including the following steps:

[0072] Step (S1), providing a system 1 for treating surface defects of a composite current collector, placing a substrate in a vacuum chamber 101 of the PVD device 10, placing an evaporation source material aluminum in an evaporation source 102, wherein the PVD device 10 is a PVD vacuum evaporation machine, the tubular Hall ion source 20 is a BMB tubular Hall ion source 30, and the number of BMB tube cores 31 in the BMB tubular Hall ion source 30 is 4 groups; and

[0073] Step (S2), turn on the PVD vacuum evaporator and the BMB tubular Hall ion source 30, evaporate the evaporation source material aluminum, and under the process flow DDR18, the gaseous aluminum is deposited on the surface of the substrate to form an aluminum film; the plasma generated by the BMB tubular Hall ion source 30 is emitted to the aluminum film surface of the composite current collector to process the surface defects on the composite current collector, wherein the output power of each group of BMB tube cores 31 is 600W, the ionized gas is a mixture of argon and oxygen, the argon concentration is 30%, and the ventilation flow rate of argon corresponding to the single-tube BMB tube core 31 is 500sccm.

[0074] Detected by CCD algorithm, the average height of surface defects of the treated aluminum composite current collector is 80μm.

[0075] Comparative Example 1:

[0076] The aluminum composite current collector prepared by PVD evaporation process has an average surface defect height of 150μm when detected by CCD algorithm at process flow rate DDR18.

[0077] It can be seen from the results of Examples 1-3 and Comparative Example 1 that the average height of the surface defects of the aluminum composite current collector obtained by the method for treating the surface defects of the composite current collector disclosed in Examples 1-3 is significantly lower than the average height of the surface defects of the aluminum composite current collector obtained in Comparative Example 1. This indicates that the system and method for treating the surface defects of the composite current collector provided by the present disclosure can greatly reduce the height of the surface defects of the composite current collector and improve the surface flatness of the composite current collector.

[0078] Among them, Example 1 is a preferred example, in which the average height of the surface defects of the aluminum composite current collector can be reduced to 60 μm.

[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present disclosure, and they should all be included in the scope of the claims and specification of the present disclosure. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present disclosure is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A system for treating surface defects of a composite current collector, characterized in that: The invention comprises a physical vapor deposition device and a tubular Hall ion source, wherein the tubular Hall ion source is installed on the physical vapor deposition device and is used to generate plasma in the physical vapor deposition process of preparing a composite current collector. After a gaseous evaporation source material is deposited on the surface of a substrate, the plasma is emitted to the surface of the composite current collector, so that surface defects are peeled off from the composite current collector.

2. The system for processing surface defects of a composite current collector according to claim 1, characterized in that: The tubular Hall ion source is a BMB (Bombard) tubular Hall ion source.

3. The system for processing surface defects of a composite current collector according to claim 2, characterized in that: The number of BMB tube cores of the BMB tubular Hall ion source is 1-12 groups.

4. The system for treating surface defects of a composite current collector according to any one of claims 1 to 3, characterized in that: The physical vapor deposition equipment is a vacuum evaporation equipment.

5. A process for treating surface defects of a composite current collector, characterized in that: The following steps are involved: Step (S1), providing the system for treating surface defects of the composite current collector according to any one of claims 1 to 4, placing a substrate in a vacuum chamber of the physical vapor deposition equipment, and placing an evaporation source material in an evaporation source; as well as Step (S2), turning on the physical vapor deposition equipment and the tubular Hall ion source, the evaporation source material evaporates, and after the gaseous evaporation source material is deposited on the surface of the substrate, the plasma generated by the tubular Hall ion source is emitted to the surface of the composite current collector to eliminate surface defects on the composite current collector.

6. The process for treating surface defects of a composite current collector according to claim 5, characterized in that: The tubular Hall ion source is a BMB tubular Hall ion source; the output power of a single group of BMB tube cores of the BMB tubular Hall ion source is 300-3000W, and / or the ventilation flow rate of the ionized gas corresponding to a single BMB tube core of the BMB tubular Hall ion source is 200-4000sccm.

7. The process for treating surface defects of a composite current collector according to claim 6, characterized in that: The ionization gas of the BMB tubular Hall ion source is argon, oxygen or a mixed gas of argon and oxygen.

8. The process for treating surface defects of a composite current collector according to claim 6 or 7, characterized in that: The number of BMB tube cores is 8-10 groups, the output power of each group is 300-375W, the ionized gas is argon, and the ventilation flow rate of argon corresponding to a single BMB tube core is 200-250sccm.

9. A composite current collector, characterized in that: The composite current collector is treated for surface defects using the composite current collector surface defect treatment process as described in any one of claims 5 to 8.

10. The composite current collector according to claim 9, characterized in that: The average height of the surface defects of the composite current collector is less than or equal to 100 μm.

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