Light-sensitive dry film, sensor comprising light-sensitive dry film and UV (ultraviolet) device for preparing sensor

Abstract

The invention relates to a photosensitive dry film, a sensor containing the photosensitive dry film and a UV device for preparing the sensor, and the photosensitive dry film comprises the following components in parts by weight: 0.1-10 parts of a cured resin monomer, 0.1-10 parts of developing resin, 0.001-0.1 part of a photoinitiator and 90-95 parts of a diluent, wherein the structural formula of the cured resin monomer is # imgabs0 #. Compared with a conventionally used dry film based on a polyurethane acrylate monomer, the photosensitive dry film provided by the invention has the advantages that C = C double bonds are added at the two ends of the monomer structure, and the content of the C = C double bonds at the ends of the monomer is increased, so that the number of monomer reaction functionality is increased; meanwhile, the cured resin monomer structure of the photosensitive dry film increases-CO-of an electron withdrawing group beside a C = C double bond, so that a pi-pi conjugate effect is formed, the reaction activity can be improved, conversion of the C = C double bond is accelerated, and the photosensitive dry film which is high in curing efficiency and capable of reducing generation of yellow substances can be obtained in cooperation with components such as developing resin and a photoinitiator. According to the sensor provided by the invention, the UV filter is used for filtering light, and the optical use requirement can be met.

Description

Technical Field

[0001] The present application relates to the field of sensor technology, and in particular to a photosensitive dry film, a sensor containing the same, and a UV device for preparing the sensor. Background Art

[0002] Sensor is a common optoelectronic device that can convert light energy into electrical energy. It is often used in touch panels and other fields. The sensor manufacturing process includes covering the surface of the sensor substrate with a photosensitive dry film, making fine patterns on the surface of the sensor substrate through exposure and development, and then etching to form fine circuits on the sensor substrate.

[0003] In order to improve the photoelectric conversion efficiency of the sensor, fine patterns need to be prepared, which requires increasing the curing rate of the photosensitive dry film and reducing the generation of impurities in the photosensitive dry film. The common method is to select a dry film with high photosensitivity and high light transmittance. The dry film currently used is based on polyurethane acrylate monomers, which easily generate yellow substances under UV light, resulting in the optical performance of the sensor produced not meeting the requirements and a low yield. At the same time, the dry film based on polyurethane acrylate monomers contains harmful substances such as fluorine, which can easily cause serious environmental pollution.

[0004] Therefore, it is necessary to develop dry film materials that are environmentally friendly and have high transmittance to reaction light waves. The sensors made using them have high photoelectric conversion efficiency and meet the use requirements. Summary of the invention

[0005] In order to solve the above-mentioned problems, the present application provides a photosensitive dry film, a sensor containing the same, and a UV device for preparing the sensor, so as to solve the problems that the existing photosensitive dry film is not environmentally friendly, has low reaction efficiency to reaction light waves and high yellowing degree, and the obtained sensor has low reflection of light of non-reaction wavelengths, low photoelectric conversion efficiency, and does not meet the optical use requirements of the sensor.

[0006] In a first aspect, the present application provides a photosensitive dry film, comprising the following components in parts by weight:

[0007] Curing resin monomer, 0.1-10 parts;

[0008] Development resin, 0.1-10 parts;

[0009] Photoinitiator, 0.001-0.1 parts;

[0010] Diluent, 90-95 parts;

[0011] Wherein, the structural formula of the curing resin monomer is:

[0012]

[0013] A further technical solution is that the photoinitiator is an acylphosphine oxide cleavage-type free radical photoinitiator.

[0014] A further technical solution is that the photoinitiator includes at least one of 1-hydroxycyclohexyl phenyl ketone and (2,4,6-trimethylbenzoyl) diphenyl phosphine oxide.

[0015] A further technical solution is that the developing resin contains carboxyl groups.

[0016] A further technical solution is that the developing resin includes at least one of dimethylaminoethyl methacrylate with a tertiary amine group and a quaternary ammonium salt of an acrylic phenolic resin.

[0017] In a second aspect, the present application provides a sensor, comprising:

[0018] The photosensitive dry film according to the first aspect;

[0019] Sensor substrate;

[0020] Wherein, the photosensitive dry film covers at least one of the upper and lower surfaces of the sensor substrate.

[0021] A further technical solution is that the curing rate of the photosensitive dry film is 67-73%, the light transmittance of the reaction wavelength is 93-96%, and the yellowing degree is 0.33-0.43.

[0022] In a third aspect, the present application provides a UV device for preparing the sensor described in the second aspect, wherein the UV device comprises a UV light source and a UV filter, wherein the UV filter is placed between the sensor and the UV light source.

[0023] A further technical solution is that the UV filter comprises a glass cover plate and a UV filter membrane, wherein the UV filter membrane is arranged on the glass cover plate.

[0024] A further technical solution is that the glass cover plate is a quartz glass cover plate.

[0025] A further technical solution is that the UV filter film is arranged by alternately stacking low-refractive index film layers and high-refractive index film layers multiple times, wherein the low-refractive index film layers are silicon dioxide layers, and the high-refractive index film layers are silicon nitride layers.

[0026] A further technical solution is that the film layer adjacent to the glass cover plate is a silicon dioxide layer; and the total thickness of the silicon dioxide layer is greater than the total thickness of the silicon nitride layer.

[0027] A further technical solution is that the total thickness of the UV filter membrane is ≥1000nm, and the number of membrane layers exceeds 40.

[0028] A further technical solution is that each silicon dioxide layer and the silicon nitride layer thereon form a double-layer structure, wherein the thickness of two silicon dioxide layers in adjacent double-layer structures is 1-3 times the thickness of the silicon nitride layer in the middle.

[0029] The above technical solution provided by the embodiment of the present application has the following advantages compared with the prior art:

[0030] Compared with the conventional dry film based on polyurethane acrylate monomer, the photosensitive dry film provided by the embodiment of the present application has C=C double bonds added to both ends of the monomer structure, and the C=C double bond content at the end of the monomer is increased, thereby increasing the number of monomer reactive functionalities; at the same time, the curing resin monomer structure of the photosensitive dry film of the present application adds an electron-withdrawing group -CO- next to the C=C double bond to form a Π-Π conjugated effect, which can improve the reaction activity and accelerate the conversion of the C=C double bond. In combination with the developing resin, photoinitiator and other components, a photosensitive dry film with high curing efficiency and reduced yellow substance generation can be obtained. In addition, the photosensitive dry film components of the present application do not contain fluorine, avoiding the problem that the conventional dry film based on polyurethane acrylate monomer is not environmentally friendly.

[0031] The sensor provided in the embodiment of the present application filters light through a UV filter in a UV device during the preparation process. The UV filter can filter light of non-reactive wavelengths and transmit light of reactive wavelengths, so that light of reactive wavelengths is irradiated to the photosensitive dry film of the sensor, thereby improving the curing efficiency of the photosensitive dry film, reducing the formation of yellowing substances in the dry film, and improving the photoelectric conversion efficiency of the sensor, thereby meeting the optical use requirements of the sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0034] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0035] Figure 1 A schematic diagram of the structure of a sensor provided in an embodiment of the present application;

[0036] Figure 2 Schematic diagram of the structure of the UV device used to prepare the sensor in the examples of this application. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0038] The disclosure below provides many different embodiments or examples to implement different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0039] For ease of description, spatial relative terms may be used herein to describe the relative positional relationship or movement of one element or feature relative to another element or feature as shown in the figure, such as "inside", "outside", "inner side", "outer side", "below", "below", "above", "above", "front", "back", etc. Such spatial relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure undergoes a position flip or a posture change or a motion state change, then these directional indications also change accordingly, for example: an element described as "below other elements or features" or "below other elements or features" will subsequently be oriented as "above other elements or features" or "above other elements or features". Therefore, the example term "below..." may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions) and the spatial relative descriptors used herein are interpreted accordingly.

[0040] The present application provides a photosensitive dry film, comprising the following components in parts by weight:

[0041] Curing resin monomer, 0.1-10 parts;

[0042] Development resin, 0.1-10 parts;

[0043] Photoinitiator, 0.001-0.1 parts;

[0044] Diluent, 90-95 parts;

[0045] Wherein, the structural formula of the curing resin monomer is:

[0046]

[0047] In view of the problems in the prior art that the photosensitive dry film used to make fine patterns on the sensor substrate has a low degree of curing, generates yellow substances that affect light transmittance and is not environmentally friendly, the present application selects a specific curing resin monomer in combination with a developing resin, a photoinitiator and other ingredients to prepare the photosensitive dry film. The obtained photosensitive dry film can quickly undergo a curing reaction under UV light and reduce the generation of yellow substances that affect light transmittance.

[0048] The reaction principle of the photosensitive dry film used to make fine patterns on the sensor substrate is that the photoinitiator absorbs UV light of a specific wavelength to form free radicals; the free radicals in the photosensitive dry film induce the conversion of the C=C double bond in the curing resin monomer to form polymer free radicals; the polymer free radicals undergo cross-linking polymerization to form long-chain polymers, and the reaction terminates; or the polymer free radicals react with oxygen to inhibit polymerization, the free radicals are replaced by other groups, and the reaction terminates.

[0049] In the prior art, the curing resin monomer in the photosensitive dry film used is polyurethane acrylate, which is obtained by reacting perfluoropolyether alcohol with polycyanate and then capped with high-functional hydroxyl-containing acrylate. In this way, fluorine-containing harmful substances exist in the curing resin monomer, which poses an environmental problem. In addition, -NH- and -COO- in the polyurethane acrylate monomer are easily hydrolyzed, which will hinder the cross-linking polymerization reaction and reduce the curing rate.

[0050] Based on this, the monomer structure of the photosensitive dry film curing resin used in the embodiments of the present application is:

[0051]

[0052] In the above-mentioned curing resin monomer structure, C=C double bonds are added at both ends to increase the C=C double bond content. At the same time, an electron-withdrawing group -CO- is added next to the C=C double bond to form a Π-Π conjugated effect, which can improve the reaction activity and accelerate the conversion of the C=C double bond. In this way, the functionality of the curing resin monomer used in this application is significantly higher than that of the conventional polyurethane acrylate monomer. In addition, the conjugated structure contained in the molecular structure further accelerates the conversion rate of the C=C double bond, thereby improving the curing effect of the photosensitive dry film.

[0053] The curing efficiency of the photosensitive dry film of the present application is closely related to the content of each component in the photosensitive dry film, such as the amount of photoinitiator. If the amount of photoinitiator is less than 0.001 parts by weight, the concentration of free radicals formed is low and the conversion rate of C=C double bonds is low; if the amount is higher than 0.1 parts by weight, the photoinitiator absorbs UV light, the light penetration ability is weakened, and the decomposition of the bottom photoinitiator is reduced, which cannot achieve the effect of increasing the free radical concentration of the entire system and has little effect on the improvement of the conversion rate of C=C double bonds.

[0054] According to one embodiment of the present application, the photoinitiator is an acylphosphine oxide type cleavage type free radical photoinitiator. Because initiators of different components absorb different UV light wavelengths and form different free radicals, the conversion rates of C=C double bonds induced by different free radicals are different, resulting in differences in the curing effect of the dry film. The present application preferably uses an acylphosphine oxide type cleavage type free radical photoinitiator, which can be cleaved into acyl and phosphonic acid acyl radicals, which can further improve the conversion rate of C=C double bonds. Specifically, the photoinitiator can be selected from at least one of 1-hydroxycyclohexyl phenyl ketone and (2,4,6-trimethylbenzoyl) diphenylphosphine oxide.

[0055] According to one embodiment of the present application, the developer resin contains carboxyl groups, which is mainly determined by the development principle, and the development principle is:

[0056] -COOH+Na 2 CO 3----- COO - +Na + +NaHCO 3 (Condition H 2 O)

[0057] Taking into account the cost and compatibility with the photosensitive dry film, the present application preferably uses at least one of dimethylaminoethyl methacrylate with a tertiary amine group and a quaternary ammonium salt of an acrylate phenolic resin as the developing resin.

[0058] In order to make the curing resin monomer, developer and photoinitiator in the photosensitive dry film evenly cover the surface of the sensor substrate, a diluent needs to be added to the photosensitive dry film. Generally, the diluent is a commonly used organic solvent, such as at least one of ethyl acetate, toluene and acetone.

[0059] In another embodiment, the present application provides a sensor, whose structure includes the photosensitive dry film and a sensor substrate as described above, wherein the photosensitive dry film covers at least one of the upper and lower surfaces of the sensor substrate.

[0060] like Figure 1As shown, the sensor substrate used in the embodiment of the present application is composed of a COP cyclic olefin polymer layer / HC hardening layer / IM shadow elimination layer / ITO indium oxide layer / Cu layer, and a photosensitive dry film is coated on the Cu layer. It should be noted here that the sensor substrate can be composed of a HC hardening layer / IM shadow elimination layer / ITO indium oxide layer / Cu layer on the upper and lower surfaces on the basis of the COP cyclic olefin polymer layer, so that the photosensitive dry film can be coated on the upper and lower surfaces of the sensor substrate.

[0061] The photoelectric conversion efficiency of the sensor is mainly determined by the fine pattern made of the photosensitive dry film. The necessary conditions that affect the production of fine patterns mainly include the curing efficiency of the photosensitive dry film and the wavelength of light entering the photosensitive dry film. For example, UV light less than 315nm will absorb the photoinitiator in the photosensitive dry film, causing the cured resin polymer to react with oxygen to generate a yellow substance. The structural formula of the yellow substance is:

[0062]

[0063] The generation of this yellow substance will affect the photoelectric conversion efficiency of the sensor, causing the sensor to be unqualified and unable to meet the use requirements.

[0064] According to one embodiment of the present application, the curing rate of the photosensitive dry film is 67-73%, the light transmittance of the reaction wavelength is 93-96%, and the yellowing degree of the photosensitive dry film is controlled at 0.33-0.43 so that the final sensor can meet the requirements.

[0065] The sensor preparation method of the embodiment of the present application includes:

[0066] Step 1), coating the photosensitive dry film of the above components on a PET film, and baking to form a photosensitive dry film;

[0067] Step 2), laminating the photosensitive dry film and the sensor substrate by a laminator to obtain product 1;

[0068] Step 3), exposing the unshielded portion of the photosensitive dry film on the product 1;

[0069] Step 4), developing and etching away the unexposed area, and after Cu / ITO etching, peeling off the photosensitive dry film to obtain product 2;

[0070] Step 5), repeating steps 1) to 3) with product 2 to obtain product 3;

[0071] Step 6), placing the product 3 in a UV device for development to obtain a conductive circuit, and then curing the photosensitive dry film to obtain a sensor.

[0072] In step 6) of the above preparation method, a UV device is used, and its structure includes a UV light source and a UV filter, wherein the UV light source emits UV light for curing the photosensitive dry film, and the UV filter filters the light emitted by the UV light source, filters the light of non-reactive wavelengths, retains the light of reactive wavelengths, and allows the light of reactive wavelengths to irradiate the photosensitive dry film of the sensor, thereby improving the curing efficiency of the dry film and reducing the formation of yellowing substances in the dry film.

[0073] To this end, in one embodiment, the present application provides a UV device for preparing the sensor as described above, which includes a UV light source and a UV filter, wherein the UV filter is placed between the sensor and the UV light source. The UV filter filters the light, filters the light of non-reactive wavelengths, retains the light of reactive wavelengths, and irradiates the photosensitive dry film, thereby improving the curing efficiency of the dry film, reducing the formation of yellowing substances in the dry film, and improving the photoelectric conversion efficiency of the sensor, thereby meeting the optical use requirements of the sensor.

[0074] In order to enable the UV filter to filter out light of non-reactive wavelengths and retain light of reactive wavelengths, according to an embodiment of the present application, the UV filter includes a glass cover plate and a UV filter membrane, wherein the UV filter membrane is disposed on the glass cover plate, and the transmittance of light of reactive wavelengths is improved by the mutual cooperation of the glass cover plate and the UV filter membrane.

[0075] The sensor provided in this application is mainly used on a touch panel. The photosensitive dry film selected has a good curing conversion rate for absorbing light with a wavelength of 365nm, and will generate yellow substances for light less than 315nm, resulting in unqualified products. Therefore, the UV filter of this application is preferably able to filter light with non-reactive wavelengths. For example, the UV filter of this application is preferably able to filter light with a wavelength less than 315nm and transmit light with a wavelength of 365nm.

[0076] Using glass cover plates of different materials as filters has different transmittances to UV light, resulting in differences in the wavelengths of light absorbed by the photoinitiator in the photosensitive dry film, which ultimately leads to differences in the curing rates of the photosensitive dry film.

[0077] According to one embodiment of the present application, the glass cover plate is made of quartz glass, which can retain more light with a wavelength of 365nm to irradiate the photosensitive dry film, thereby improving the curing effect of the photosensitive dry film. This is because the ultraviolet light transmission performance of glass depends on the chemical bond force between cations and oxygen. The silica content of quartz glass is greater than 99.5%, and the silicon-oxygen tetrahedron structure is complete, which makes quartz glass have a high transmittance of 365nm light compared to other glasses.

[0078] In order to further retain more 365nm light and reduce the light that is less than 315nm, according to one embodiment of the present application, the film layer structure of the UV filter film is optimized, and the UV filter film is composed of a low refractive index film layer and a high refractive index film layer stacked alternately for multiple times, wherein the low refractive index film layer is a silicon dioxide layer, and the high refractive index film layer is a silicon nitride layer. In this way, the light sequentially passes through the UV filter film that is composed of a low refractive index silicon dioxide layer and a high refractive index silicon nitride layer stacked alternately for multiple times, so that the UV light interferes in the multi-layer film structure, thereby achieving the purpose of filtering the light with a wavelength less than 315nm and retaining the light with a wavelength of 365nm.

[0079] Among them, the principle of thin film interference is that the incident light is emitted from the upper surface of the film to obtain the first beam of light, the refracted light is reflected from the lower surface of the film, and then refracted from the upper surface to obtain the second beam of light. These two beams of light are on the same side of the film and are separated from the same incident vibration, which is coherent light. The optical path difference between the two coherent lights in thin film interference = 2*refractive index*film thickness*cos(internal refraction angle of the film)±λ / 2. When the optical path difference is equal to an odd multiple of half the wavelength, the reflected light of the mirror and the reflected light of the coating interfere with each other and eliminate each other, increasing the light transmittance.

[0080] According to the transmittance enhancement rate of the film structure, the thickness and number of UV filter layers are adjusted, and the light is transmitted from the silicon dioxide layer with a lower refractive index to the silicon nitride layer with a higher refractive index, changing the optical path difference of the coherent light so that it meets the conditions of constructive or destructive interference, ultimately filtering out light with a wavelength less than 315nm and retaining light with a wavelength of 365nm.

[0081] According to one embodiment of the present application, the total thickness of the UV filter membrane is ≥1000nm. If the total thickness of the UV filter membrane is less than 1000nm, there will be a risk of transmitting short-wave light. In addition, the number of membrane layers exceeds 40, so that a better light filtering effect can be obtained.

[0082] According to an embodiment of the present application, the film layer adjacent to the glass cover is a silicon dioxide layer, mainly because the main component of glass is silicon dioxide, and the film layer adjacent to the UV filter membrane and the glass cover is a silicon dioxide layer to avoid reliability issues. At the same time, in order to consider the reliability issues of the filter membrane, the total thickness of the silicon dioxide layer of the present application is greater than the total thickness of the silicon nitride layer, because too high a thickness of silicon nitride will cause high stress problems, and it is easy to crack and peel off.

[0083] According to one embodiment of the present application, each silicon dioxide layer and the silicon nitride layer thereon form a double-layer structure, wherein the sum of the thicknesses of the two silicon dioxide layers in the adjacent double-layer structure is 1-3 times the thickness of the middle silicon nitride layer. Because under this thickness condition, the requirement that the optical path difference is equal to an odd multiple of half the wavelength can be further met, the purpose of destructive interference of the reflected light can be achieved, thereby improving the transmittance of light of a specific reaction wavelength.

[0084] The technical solution of the present application will be described in detail below through different embodiments and comparative examples.

[0085] The preparation method of the sensor in this application is:

[0086] Step 1), coating the photosensitive dry film listed in Table 2 on the PET film, and baking to form a photosensitive dry film;

[0087] Step 2), laminating the upper and lower surfaces of the sensor substrate with the photosensitive dry film by a laminator to obtain a product 1;

[0088] Step 3), exposing the unshielded portion of the photosensitive dry film on the product 1;

[0089] Step 4), developing and etching away the unexposed area, and after Cu / ITO etching, peeling off the photosensitive dry film to obtain product 2;

[0090] Step 5), repeating steps 1) to 3) with product 2 to obtain product 3;

[0091] Step 6), placing the product 3 in a UV device for development to obtain a conductive circuit, and then curing the photosensitive dry film to obtain a sensor;

[0092] The sensor substrate structure used in the above process is Cu(10um) / ITO(30um) / IM(80um) / HC(3um) / COP(3um) / HC(3um) / IM(80um) / ITO(30um) / Cu(10um);

[0093] The UV device used in step 6) is attached Figure 2 The structure shown;

[0094] The specific material and thickness of each layer of the UV filter film in the UV device are shown in Table 1. The magnetron sputtering method is used to sputter the film layers in the expected order, bombarding the silicon target in an oxygen and nitrogen atmosphere. During the preparation process, the vacuum degree in the vacuum is ensured, and the gas flow of argon, oxygen and nitrogen is adjusted to control the sputtering time, gradually bombarding the target material to form layers. The specific parameters when using the magnetron sputtering process are: vacuum degree 10 -5 Pa, argon gas flow rate 380sccm, oxygen gas flow rate 100sccm, nitrogen gas flow rate 50sccm, sputtering power 0.5kw.

[0095] Table 1 Film structure of each UV filter membrane

[0096]

[0097]

[0098]

[0099] Experiment 1: Investigating the effects of different compositions of photosensitive dry films on curing performance

[0100] According to the above sensor manufacturing process, the curing performance of the photosensitive dry film protected by the present application and the conventional photosensitive dry film was compared. The specific compositions of the photosensitive dry films of Examples 1-3 and Comparative Example 1 are shown in Table 2, and the corresponding photosensitive dry film performance parameters are shown in Table 2.

[0101] The UV filter in this experiment is made of quartz glass, and a UV filter film with a film layer structure 1 is plated on the quartz glass.

[0102] Table 2 Photosensitive dry films and properties of Examples 1-3 and Comparative Example 1 (parts by weight)

[0103]

[0104]

[0105] Note: The structures of the curing resin monomers used in Examples 1-3 in the above table are as follows:

[0106]

[0107] The amounts of each component added in the above table are all parts by weight;

[0108] The test method for curing efficiency is: infrared spectroscopy to test the curing rate (FTIR test), place the sample to be tested on the crystal of the sample stage. Start the test program to obtain the infrared spectrum, and the test wave number range is 4000-400cm -1 , resolution 4cm -1 , scanning rate: 32 times.

[0109] The test method for transmittance is: using a spectrophotometer to calculate the ratio of the light flux intensity of the glass and the light flux intensity transmitted on the glass surface.

[0110] The testing method for the yellowing degree is: using a colorimeter to test, usually using the small Y value of the chromaticity to represent the yellowing degree. The smaller the Y value, the lower the yellowing degree.

[0111] From the results in Table 2, it can be seen that the photosensitive dry films of Examples 1 to 3 of the present application have higher curing efficiency and lower yellowing degree than conventional photosensitive dry films.

[0112] Experiment 2: Investigating the effect of UV filters in UV devices on curing performance

[0113] The sensor was prepared according to the manufacturing process described above, and the photosensitive dry film of Example 1 was used to explore the effect of the UV filter in the UV device on the curing performance.

[0114] The only difference between Examples 4-5 and Comparative Example 2 is the composition of the UV filter in the UV device, and all of them are tested using the photosensitive dry film of Example 1 of the present application.

[0115] Table 3 Composition and curing performance of Examples 4-5 and Comparative Example 2

[0116]

[0117] From the above results, compared with Comparative Example 2, the curing efficiency of the photosensitive dry film in the sensor obtained by adding a UV filter to the UV device in Example 1 and Example 4-5 is significantly improved, the transmittance of the reaction light is significantly improved, and the yellowing degree is significantly reduced. From the results of Example 4 and Example 5, quartz glass is more suitable as the glass substrate of the UV filter.

[0118] From the results of Table 2 and Table 3, it can be seen that the curing efficiency of the photosensitive dry film of Examples 1-5 of the present application is between 67-73% under the UV filter of the specific film structure, the light transmittance of the reaction wavelength is between 93-96%, and the yellowing degree of the photosensitive dry film is between 0.33-0.43, which can meet the optical use requirements of the sensor. Compared with the use of traditional photosensitive dry film, the curing efficiency is increased by 7.1% at most, and the yellowing degree can be reduced by 16%.

[0119] It should be understood that the terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "include", "comprise", "contain", and "have" are inclusive, and therefore specify the existence of stated features, steps, operations, elements and / or parts, but do not exclude the existence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof. The method steps, processes, and operations described herein are not interpreted as necessarily requiring them to be performed in the specific order described or illustrated, unless the execution order is clearly indicated. It should also be understood that additional or alternative steps may be used.

[0120] Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

[0121] The foregoing is merely a specific embodiment of the present invention, which enables those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A photosensitive dry film, characterized in that: The composition comprises the following components in parts by weight: Curing resin monomer, 0.1-10 parts; Development resin, 0.1-10 parts; Photoinitiator, 0.001-0.1 parts; Diluent, 90-95 parts; Wherein, the structural formula of the curing resin monomer is:

2. The photosensitive dry film according to claim 1, characterized in that: The photoinitiator is an acylphosphine oxide type cleavage type free radical photoinitiator; Preferably, the photoinitiator includes at least one of 1-hydroxycyclohexyl phenyl ketone and (2,4,6-trimethylbenzoyl)diphenylphosphine oxide.

3. The photosensitive dry film according to claim 1, characterized in that: The developer resin contains carboxyl groups; Preferably, the developing resin includes at least one of dimethylaminoethyl methacrylate with a tertiary amine group and quaternary ammonium salt of acrylate phenolic resin.

4. A sensor, characterized in that: include: The photosensitive dry film according to any one of claims 1 to 3; Sensor substrate; Wherein, the photosensitive dry film is coated on at least one of the upper and lower surfaces of the sensor substrate; Preferably, the curing rate of the photosensitive dry film is 67-73%, the light transmittance at the reaction wavelength is 93-96%, and the yellowing degree is 0.33-0.

43.

5. A UV device for preparing the sensor as claimed in claim 4, characterized in that: It includes a UV light source and a UV filter, wherein the UV filter is placed between the sensor and the UV light source.

6. The UV device according to claim 5, characterized in that: The UV filter comprises a glass cover plate and a UV filter membrane, wherein the UV filter membrane is arranged on the glass cover plate.

7. The UV device according to claim 6, characterized in that: The glass cover plate is a quartz glass cover plate.

8. The UV device according to claim 6, characterized in that: The UV filter film is formed by alternately stacking low-refractive index film layers and high-refractive index film layers in sequence, wherein the low-refractive index film layers are silicon dioxide layers, and the high-refractive index film layers are silicon nitride layers.

9. The UV device according to claim 8, characterized in that: The film layer adjacent to the glass cover plate is a silicon dioxide layer; the total thickness of the silicon dioxide layer is greater than the total thickness of the silicon nitride layer; Preferably, the total thickness of the UV filter membrane is ≥1000 nm, and the number of membrane layers exceeds 40.

10. The UV device according to claim 8, characterized in that: Each silicon dioxide layer and the silicon nitride layer thereon form a double-layer structure, wherein the thickness of two silicon dioxide layers in adjacent double-layer structures is 1-3 times the thickness of the silicon nitride layer in the middle.

Images