Control method of semiconductor processing equipment and semiconductor processing equipment

Abstract

The present invention provides a control method and semiconductor processing equipment for semiconductor processing equipment. The semiconductor processing equipment includes a semiconductor processing chamber provided with a detection device, a control module and a pressure sensor device. The semiconductor processing chamber is provided with a positive pressure purge control pipeline, a negative pressure air intake control pipeline and an exhaust control pipeline. The control method includes: after the control module determines that the detected object information includes water and oxygen, it controls the positive pressure purge control pipeline according to the pressure information to continuously introduce and discharge the purge gas in the semiconductor processing chamber; after the control module determines that the detected object information includes harmful substances, it controls the exhaust control pipeline and the negative pressure air intake control pipeline according to the pressure information, so that the pressure in the semiconductor processing chamber performs the operation of introducing the purge gas and the operation of exhaust control on the semiconductor processing chamber under the negative pressure setting range. The present invention solves the potential safety hazard problem in the prior art that the use of positive pressure purge easily causes harmful substances to leak and spread into the environment.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a control method for semiconductor processing equipment and semiconductor processing equipment. Background Art

[0002] At present, semiconductor processing equipment, such as glove box control systems, uses positive pressure purge control to purge processed objects, such as pedestals, process chambers, etc. to remove water and oxygen. Taking the use of a glove box to purge the pedestal as an example, the specific method of removing water and oxygen is: after the pedestal is placed in the glove box, nitrogen is filled into the glove box to maintain a certain positive pressure in the glove box compared to the ambient pressure, and the pressure is released from the glove box to the outside to reduce the water and oxygen content in the glove box.

[0003] However, when the object to be processed, such as the substance escaping from the process chamber, contains harmful substances, such as arsine and phosphine, the positive pressure purge method is not suitable for processing harmful substances. The continuous positive pressure state in the semiconductor processing equipment may damage its structures such as seals, resulting in poor sealing effect. Once a leak occurs, the toxic gas leaks and spreads into the environment, which will pose a safety hazard. Summary of the invention

[0004] The object of the present invention is to provide a control method and semiconductor processing equipment for semiconductor processing equipment, which can flexibly select positive-pressure purging or negative-pressure purging according to the detected atmosphere information in the semiconductor processing equipment during the purging process, thereby solving the safety hazard problem caused by using positive-pressure purging to remove harmful substances in the prior art.

[0005] To achieve the above-mentioned purpose, the control method of the semiconductor processing equipment of the present invention includes executing a positive pressure purge control step or a negative pressure purge control step, and the positive pressure purge control step includes a positive pressure continuous purge control step; the semiconductor processing equipment includes a semiconductor processing chamber provided with a detection device, a control module and a pressure sensor device, and the semiconductor processing chamber is provided with a positive pressure purge control pipeline, a negative pressure intake control pipeline and an exhaust control pipeline, and an object to be processed is placed in the semiconductor processing chamber; the positive pressure continuous purge control step includes: the control module determines that the detected object contains water and oxygen according to the information sent by the detection device and controls the negative pressure intake control pipeline and the exhaust control pipeline to be in a closed state, and then The positive pressure purge control pipeline is controlled according to the pressure information sent by the pressure sensor device, so that the purge gas is continuously introduced into and discharged from the semiconductor processing chamber, and the pressure in the semiconductor processing chamber is within the positive pressure setting range; the negative pressure purge control step includes: after the control module determines that harmful substances are contained according to the detection object information sent by the detection device and controls the positive pressure purge control pipeline to be in a closed state, the exhaust control pipeline and the negative pressure intake control pipeline are controlled according to the pressure information sent by the pressure sensor device, so that the pressure in the semiconductor processing chamber is within the negative pressure setting range, and the semiconductor processing chamber is respectively subjected to the operation of introducing the purge gas and performing the exhaust control operation.

[0006] Preferably, after the control module determines that the object contains harmful substances and water and oxygen according to the detected object information, or determines that harmful substances are contained during the execution of the positive-pressure purge control step, it executes the negative-pressure purge control step and then executes the positive-pressure purge control step.

[0007] Preferably, the negative pressure setting range is -1mbar~-5mbar, the negative pressure lower limit of the negative pressure setting range is -1mbar, the negative pressure upper limit of the negative pressure setting range is -5mbar, and the positive pressure setting range is 3mbar ~ 5mbar.

[0008] Preferably, the positive-pressure purge control step also includes a positive-pressure intermittent purge control step, and the positive-pressure intermittent purge control step includes: after the control module determines that the detected object contains water and oxygen based on the detected object information and controls the exhaust parts of the negative-pressure air intake control pipeline and the positive-pressure purge control pipeline to be in a closed state, the air intake part of the positive-pressure purge control pipeline and the exhaust gas extraction and exhaust control pipeline are controlled according to the pressure information sent by the pressure sensing device, so that the pressure in the semiconductor processing chamber performs the operation of introducing the purge gas and performing the exhaust gas extraction and exhaust control operations on the semiconductor processing chamber within the positive pressure setting range.

[0009] Preferably, the exhaust control pipeline includes a negative pressure exhaust control pipeline and a positive pressure exhaust pipeline connected to the semiconductor processing chamber and in parallel, and an exhaust pipeline connecting the negative pressure exhaust control pipeline and the positive pressure exhaust pipeline; when the negative pressure purge control step is executed, the exhaust control step includes: after the control module controls the negative pressure air intake control pipeline and the positive pressure exhaust pipeline to be in a closed state, the negative pressure exhaust control pipeline is controlled to perform exhaust flow limiting control, and exhaust is performed through the exhaust pipeline.

[0010] Preferably, when executing the positive pressure intermittent purge control step, the exhaust control step includes: the control module controls the air intake part of the positive pressure purge control pipeline and the negative pressure exhaust control pipeline to a closed state, and then controls the positive pressure exhaust pipeline to an open state, and exhausts air through the exhaust pipeline.

[0011] Preferably, the exhaust rate of the exhaust flow limiting control does not exceed 0.5 mbar / s.

[0012] Preferably, in the negative pressure purge control step, the step in which the control module controls the exhaust control pipeline and the negative pressure air intake control pipeline according to the pressure information sent by the pressure sensing device includes: after controlling the exhaust control pipeline to be in a closed state, controlling the negative pressure air intake control pipeline to intake air into the semiconductor processing chamber at a rate not exceeding 0.5 mbar / s, until the pressure in the semiconductor processing chamber is within the negative pressure setting range and close to the negative pressure lower limit of the negative pressure setting range; after controlling the negative pressure air intake control pipeline to be in a closed state, controlling the exhaust control pipeline to exhaust the semiconductor processing chamber at a rate not exceeding 0.5 mbar / s, until the pressure in the semiconductor processing chamber is within the negative pressure setting range and close to the negative pressure upper limit of the negative pressure setting range, and the negative pressure degree of the negative pressure lower limit is lower than the negative pressure degree of the negative pressure upper limit.

[0013] Preferably, the positive pressure purge control step also includes: the control module compares and judges the water and oxygen content value in the detection object information with the pre-stored water and oxygen setting comparison value and the water and oxygen setting minimum value; when the control module determines that the water and oxygen content value does not exceed the water and oxygen setting comparison value and is greater than the water and oxygen setting minimum value, the positive pressure intermittent purge control step is executed; when the control module determines that the water and oxygen content value is above the water and oxygen setting comparison value, the positive pressure continuous purge control step is executed.

[0014] Preferably, the positive pressure purge control pipeline includes a positive pressure air intake pipeline and a positive pressure exhaust control pipeline. In the positive pressure continuous purge control step, the step of controlling the positive pressure purge control pipeline according to the pressure information sent by the pressure sensing device includes: controlling the positive pressure air intake pipeline and the positive pressure exhaust control pipeline to be in an open state, continuously introducing and continuously discharging the purge gas into the semiconductor processing chamber, and the positive pressure exhaust control pipeline continuously discharges the purge gas and performs one-way flow limiting control to ensure that the pressure in the semiconductor processing chamber is within the positive pressure setting range.

[0015] The semiconductor processing equipment provided by the present invention is used to perform a positive pressure purge control step and a negative pressure purge control step on a processed object, wherein the positive pressure purge control step includes a positive pressure continuous purge control step; the semiconductor processing equipment includes a control module, a semiconductor processing chamber, a detection device and a pressure sensing device; the semiconductor processing chamber is provided with a positive pressure purge control pipeline, a negative pressure air intake control pipeline and an exhaust control pipeline connected to the control module; the detection device is arranged in the semiconductor processing chamber and connected to the control module, and the detection device is used to obtain and send detection object information to the control module; The pressure sensing device is arranged in the semiconductor processing chamber and connected to the control module, and the pressure sensing device is used to obtain and send pressure information to the control module; the control module is used to control the positive pressure purge control pipeline according to the pressure information after judging that the object to be processed contains water and oxygen, so as to perform the positive pressure continuous purge control step on the object to be processed; the control module is also used to control the exhaust control pipeline and the negative pressure intake control pipeline according to the pressure information after judging that the object to be processed contains harmful substances, so as to perform the negative pressure purge control step on the object to be processed.

[0016] Preferably, the positive-pressure purge control step also includes a positive-pressure intermittent purge control step, and the exhaust and exhaust control pipeline includes a negative-pressure exhaust control pipeline and a positive-pressure exhaust pipeline connected to the semiconductor processing chamber and in parallel, and an exhaust pipeline connected to the negative-pressure exhaust control pipeline and the positive-pressure exhaust pipeline. The control module is used to control the air intake part of the positive-pressure purge control pipeline, the positive-pressure exhaust pipeline and the exhaust pipeline to perform the positive-pressure intermittent purge control step, and to control the negative-pressure air intake control pipeline and the negative-pressure exhaust control pipeline to perform the negative-pressure purge control step.

[0017] Preferably, the positive-pressure exhaust circuit includes a second exhaust pipe and a first switch valve arranged on the second exhaust pipe, the negative-pressure exhaust control circuit includes a third exhaust pipe, and a second switch valve and a mechanical current limiting device sequentially arranged on the third exhaust pipe, at least one of the second exhaust pipe and the third exhaust pipe is connected to the semiconductor processing chamber, the ends of the second exhaust pipe and the third exhaust pipe are both connected to the exhaust circuit, and the control module connects the first switch valve and the second switch valve.

[0018] Preferably, the positive pressure purge control pipeline includes a positive pressure intake pipeline and a positive pressure exhaust control pipeline, the positive pressure intake pipeline includes a first intake pipe and a third switch valve arranged on the first intake pipe, the positive pressure exhaust control pipeline includes a first exhaust pipe and a fourth switch valve and a one-way valve arranged on the first exhaust pipe in sequence, the first intake pipe and the first exhaust pipe are connected to the semiconductor processing chamber, and the third switch valve and the fourth switch valve are connected to the control module.

[0019] Preferably, the negative pressure air intake control pipeline includes a second air intake pipe connected to the semiconductor processing chamber, and a fifth switch valve and a flow control device sequentially arranged on the second air intake pipe, and the fifth switch valve and the flow control device are connected to the control module.

[0020] Preferably, the semiconductor processing equipment further comprises an exhaust gas treatment device, and the exhaust portion of the positive pressure purge control pipeline and the end of the exhaust gas extraction control pipeline are connected to the exhaust gas treatment device.

[0021] Preferably, the semiconductor processing chamber is also provided with operating gloves, so that the operator can perform pressurized operations in the semiconductor processing equipment through the operating gloves.

[0022] The control method of the semiconductor processing equipment of the present invention and the semiconductor processing equipment for implementing the control method both have the following beneficial effects:

[0023] In the control method of the present invention, after the control module determines that water and oxygen are contained according to the detected object information, the positive pressure purge control pipeline is controlled according to the pressure information, so that the purge gas is continuously introduced into and discharged from the semiconductor processing chamber, and the pressure in the semiconductor processing chamber is within the positive pressure setting range; after the control module determines that harmful substances are contained according to the detected object information, the exhaust control pipeline and the negative pressure air intake control pipeline are controlled according to the pressure information, so that the pressure in the semiconductor processing chamber is within the negative pressure setting range, respectively, to perform the operation of introducing the purge gas and the operation of exhaust control on the semiconductor processing chamber, so that the present invention can not only freely switch between positive pressure purge control and negative pressure purge control according to the real-time water and oxygen information and harmful substance information in the semiconductor processing chamber, that is, it can flexibly select positive pressure purge or negative pressure purge according to the detected atmosphere information in the semiconductor processing equipment during the purge process, and realizes the removal of harmful substances by negative pressure purge and the removal of water and oxygen substances by positive pressure purge, which solves the safety hazard problem that the use of positive pressure purge in the prior art easily causes the leakage and diffusion of harmful substances into the environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the structure of a semiconductor processing device according to an embodiment of the present invention;

[0025] Figure 2 A structural block diagram of a part of the structure of a semiconductor processing device according to an embodiment of the present invention;

[0026] Figure 3 FIG. 1 is a flow chart of a control method for semiconductor processing equipment according to an embodiment of the present invention. Figure 1 ;

[0027] Figure 4 FIG. 1 is a flow chart of a control method for semiconductor processing equipment according to an embodiment of the present invention. Figure 2 ;

[0028] Figure 5 FIG. 1 is a flow chart of a control method for semiconductor processing equipment according to an embodiment of the present invention. Figure 3 ;

[0029] Figure 6 FIG. 1 is a flow chart of a control method for semiconductor processing equipment according to an embodiment of the present invention. Figure 4 . DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0031] In order to overcome the problems existing in the prior art, an embodiment of the present invention provides a control method for semiconductor processing equipment and a semiconductor processing equipment, which can flexibly select positive-pressure purging or negative-pressure purging according to the detected atmosphere information in the semiconductor processing equipment during the purging process, and solve the safety hazard problem that positive-pressure purging is used to remove harmful substances in the prior art, which easily leads to the leakage and diffusion of harmful substances into the environment.

[0032] The positive pressure and negative pressure described in the embodiments of the present invention are both relative pressures to the external atmospheric pressure.

[0033] The positive pressure value is a positive value obtained by subtracting the external atmospheric pressure from the pressure in the semiconductor processing chamber, wherein the upper limit of the positive pressure is the largest positive value, and the lower limit of the positive pressure is the smallest positive value.

[0034] The negative pressure value is a negative value obtained by subtracting the external atmospheric pressure from the pressure inside the semiconductor processing chamber, wherein the upper limit of the negative pressure is the negative value with the largest absolute value, representing the maximum negative pressure degree relative to the external atmospheric pressure; the lower limit of the negative pressure is the negative value with the smallest absolute value, representing the minimum negative pressure degree relative to the external atmospheric pressure.

[0035] In some embodiments of the present invention, the semiconductor processing equipment is used to perform a positive pressure purge control step and / or a negative pressure purge control step on the object to be processed, and the positive pressure purge control step includes a positive pressure continuous purge control step.

[0036] In some embodiments of the present invention, reference Figure 1 and Figure 2 The semiconductor processing equipment includes a semiconductor processing chamber 100, a detection device 1, a pressure sensing device 2 and a control module 3.

[0037] In some embodiments of the present invention, reference Figure 1 and Figure 2The semiconductor processing chamber 100 is provided with a positive pressure purge control pipeline (not shown in the figure), a negative pressure air intake control pipeline 6 and an exhaust control pipeline 7 connected to the control module 3. An object to be processed (not shown in the figure) is placed in the semiconductor processing chamber 100.

[0038] In some embodiments, the volume of the semiconductor processing chamber is 1 to 1.5 cubic meters. In some specific embodiments, the semiconductor processing chamber is a glove box with a length of 1.5 meters, a width of 0.8 meters, and a height of 1 meter.

[0039] In some embodiments of the present invention, reference Figure 1 and Figure 2 The positive pressure purge control pipeline includes an air intake part and an exhaust part. The air intake part includes a positive pressure air intake pipeline 4, and the exhaust part includes a positive pressure exhaust control pipeline 5.

[0040] In some embodiments of the present invention, the object to be processed is a pedestal carrying a substrate, or a pedestal. Before transferring the pedestal or the pedestal carrying a substrate to a reaction chamber, the pedestal needs to be cleaned and purged in the semiconductor processing chamber to remove impurities and water oxygen that may affect the deposition process (such as MOCVD).

[0041] In some embodiments of the present invention, the object to be processed is a process chamber, which is surrounded by semiconductor processing equipment. The process chamber is used to perform a deposition process (such as an MOCVD process) and then opened. Positive pressure purge control using the control method of an embodiment of the present invention can reduce the water and oxygen content to meet the requirements of the next batch of deposition processes. If there are still unreacted harmful process gases in the process chamber, such as arsine and phosphine, negative pressure purge control can be performed after detection by the control method of an embodiment of the present invention to safely discharge the harmful process gases. If harmful process gases leak during a deposition reaction in the process chamber, they can also be discharged safely and promptly by the control method of an embodiment of the present invention.

[0042] In some specific embodiments, the semiconductor processing chamber is a glove box.

[0043] In some embodiments, reference Figure 1 The semiconductor processing chamber 100 is also provided with an operation port 101, and an operation glove is provided at the operation port 101, so that an operator can perform pressurized operation in the semiconductor processing equipment through the operation glove.

[0044] In some embodiments of the present invention, reference Figure 1 and Figure 2, the detection device 1 is arranged in the semiconductor processing chamber 100 and connected to the control module 3, the detection device 1 is used to obtain the detection object information in the semiconductor processing chamber 100 and send it to the control module 3, and the control module 3 determines whether it contains water and oxygen or whether it contains harmful substances according to the detection object information. The judgment of containing water and oxygen is to judge that the water and oxygen content in the semiconductor processing chamber 100 exceeds the water and oxygen set minimum value pre-stored in the control module. The judgment of containing harmful substances is to judge that the harmful substance content in the semiconductor processing chamber 100 exceeds the harmful substance set minimum value pre-stored in the control module. Specifically, the water and oxygen set minimum value is determined according to the requirements for the water and oxygen content of the object to be processed, and the harmful substance set minimum value is determined according to the detection accuracy of the selected instrument for detecting the harmful substance content, or according to the detection accuracy of the harmful substance content instrument and related emission control requirements.

[0045] In some embodiments of the present invention, reference Figure 1 and Figure 2 The pressure sensing device 2 is disposed in the semiconductor processing chamber 100 and connected to the control module 3 . The pressure sensing device 2 is used to obtain pressure information in the semiconductor processing chamber 100 and send it to the control module 3 .

[0046] In some embodiments of the present invention, reference Figure 1 and Figure 2 The control module 3 is used to control the positive pressure purge control pipeline (not shown in the figure) according to the judgment conclusion of the water-oxygen content and the pressure information so that the purge gas is continuously introduced into and discharged from the semiconductor processing chamber 100, so as to perform the positive pressure continuous purge control step on the object to be processed.

[0047] In some embodiments of the present invention, reference Figure 1 and Figure 2 The control module 3 is also used to control the exhaust control pipeline 7 and the negative pressure air intake control pipeline 6 according to the judgment conclusion of containing harmful substances and the pressure information to perform the negative pressure purge control step on the object to be treated.

[0048] The embodiment of the present invention determines the detected object information through the control module 3, and according to the detected object information, can select to control the positive pressure purge control pipeline to perform positive pressure continuous purge control of continuously introducing purge gas and continuously discharging purge gas on the same semiconductor processing equipment to efficiently remove water and oxygen substances, or select to control the exhaust control pipeline 7 and the negative pressure air intake control pipeline 6 to perform the negative pressure purge control to remove harmful substances, so that not only can the positive pressure purge control and the negative pressure purge control be freely switched according to the water and oxygen information and harmful substance information in the semiconductor processing chamber 100, but also the negative pressure purge is used to remove harmful substances, and the positive pressure purge is used to remove water and oxygen substances, which solves the potential safety hazard problem in the prior art that the positive pressure purge is likely to cause harmful substances to leak and spread into the environment.

[0049] The "connection" between the various devices in some embodiments of the present invention and the control module can be a wired electrical connection to transmit information, or it can be a wireless connection to transmit information. The specific setting can be adapted according to the actual installation requirements.

[0050] In the implementation of the present invention, the harmful substances include poisonous gases or suspended particles, such as arsine, acidic gases (chlorine, hydrogen chloride), phosphine gas, etc.

[0051] In some embodiments of the present invention, reference Figure 1 and Figure 2 The detection device 1 includes an oxygen content detector 11, a water content detector 12 and a harmful substance content detector 13 which are respectively connected to the control module 3 and arranged in the semiconductor processing chamber 100 to respectively detect the oxygen content, water content and harmful substance content in the semiconductor processing chamber 100 and feed back the oxygen content, water content and harmful substance content in the semiconductor processing chamber 100 to the control module 3.

[0052] In some embodiments of the present invention, reference Figure 1 and Figure 2, the semiconductor processing equipment also includes an exhaust gas treatment device 8, and the exhaust part of the positive pressure purge control pipeline and the end of the exhaust control pipeline 7 are both connected to the exhaust treatment device 8. By connecting the exhaust control pipeline 7 with the exhaust treatment device 8, the exhaust treatment device 8 is used to treat the discharged harmful substances, which can effectively prevent the harmful substances from being directly discharged into the environment and causing pollution to the environment. In addition, the exhaust part of the positive pressure purge control pipeline is connected to the exhaust treatment device 8, so that in the process of positive pressure continuous purge control of the semiconductor processing chamber through the positive pressure purge control pipeline, when the control module judges that the semiconductor processing chamber contains harmful substances according to the detected object information, indicating that the semiconductor processing chamber currently contains harmful substances, the harmful substances can also be discharged from the exhaust part of the positive pressure purge control pipeline to the exhaust treatment device 8 in time to treat the discharged harmful substances, thereby preventing the harmful substances from being directly discharged into the environment and causing pollution to the environment.

[0053] In some embodiments of the present invention, the semiconductor processing equipment not only integrates the positive pressure air intake pipeline 4, the positive pressure exhaust control pipeline 5, the negative pressure air intake control pipeline 6, and the exhaust control pipeline 7, but also the exhaust control pipeline 7 includes a negative pressure exhaust control pipeline and a positive pressure exhaust pipeline connected to the semiconductor processing chamber 100 and connected in parallel, and an exhaust pipeline connected to the negative pressure exhaust control pipeline and the positive pressure exhaust pipeline, so that the purge gas can be continuously introduced and discharged by controlling the positive pressure air intake pipeline 4 and the positive pressure exhaust control pipeline 5 and the semiconductor processing chamber 100 can be controlled. The positive pressure continuous purge control step of the semiconductor processing chamber 100 is within the positive pressure setting range, and the negative pressure purge control step is performed by controlling the negative pressure intake control pipeline 6 and the negative pressure exhaust control pipeline 7. It is also possible to select the positive pressure intake pipeline 4 and the positive pressure exhaust pipeline of the exhaust control pipeline 7 to introduce the purge gas according to the water oxygen content information fed back by the detection device 1 so that the semiconductor processing chamber 100 reaches the positive pressure setting range and then releases the pressure, thereby increasing the application range of the semiconductor processing equipment. In addition, the negative pressure exhaust control pipeline and the positive pressure exhaust pipeline in the exhaust control pipeline 7 share a single exhaust pipeline, which simplifies the structure and reduces the complexity of operation.

[0054] In the embodiment of the present invention, when the water and oxygen content is low, the positive pressure exhaust pipeline in the positive pressure air intake pipeline 4 and the exhaust control pipeline 7 is controlled so that positive pressure intermittent purge control can be performed, so that the purge gas can be fully diffused in the semiconductor processing chamber 100 and evenly merged with the water and oxygen substances. This not only ensures the removal of water and oxygen substances in dead corners in the semiconductor processing chamber 100, but also reduces the amount of purge gas used.

[0055] The negative pressure exhaust control pipeline in the exhaust control pipeline 7 can perform exhaust flow limiting control in the negative pressure purge control, and the negative pressure intake control pipeline 6 can intake air into the semiconductor processing chamber 100 and control the intake flow rate, which can not only more safely ensure that the negative pressure purge control step is performed within the negative pressure setting range in the semiconductor processing chamber 100, but also prevent the pressure in the semiconductor processing chamber 100 from overshooting and exceeding the negative pressure setting range under negative pressure conditions, and even make the pressure in the semiconductor processing chamber containing harmful substances reach a positive pressure, thereby avoiding purging and treating harmful substances in the positive pressure atmosphere in the semiconductor processing chamber 100, and ensuring the safety of the processing process.

[0056] In some embodiments of the present invention, reference Figure 1 and Figure 2 The positive pressure exhaust pipeline includes a second exhaust pipe 76 connected to the semiconductor processing chamber 100, and the second exhaust pipe 76 is provided with a first switch valve 71 connected to the control module 3. The second exhaust pipe 76 provided with the first switch valve 71 can be used for positive pressure intermittent purge control, and the second exhaust pipe 76 provided with the first switch valve 71 can also be used to adjust the pressure in the semiconductor processing chamber 100, that is, when the pressure in the semiconductor processing chamber 100 is too high and needs to be relieved to adjust it to within the positive pressure setting range or the negative pressure setting range, the first switch valve 71 and the exhaust pipeline can be controlled to open, and the pressure can be relieved by exhausting the exhaust pipeline.

[0057] In some embodiments of the present invention, reference Figure 1 and Figure 2 The negative pressure exhaust control pipeline includes a third exhaust pipe 75 connected to the semiconductor processing chamber 100, and a second switch valve 73 and a mechanical current limiting device 74 are sequentially arranged on the third exhaust pipe 75, and the second switch valve 73 is connected to the control module 3. By opening the second switch valve 73 and the mechanical current limiting device 74, the negative pressure exhaust control pipeline can be controlled to perform exhaust current limiting control, so that it can not only ensure the safe removal of harmful substances, but also help to safely control the rate of pressure release in the semiconductor processing chamber 100, so as to avoid the accidental situation that the pressure in the semiconductor processing chamber 100 drops too fast and exceeds the tolerance range, resulting in damage, that is, it is beneficial to protect the semiconductor processing equipment and extend the service life of the semiconductor processing equipment.

[0058] In some embodiments of the present invention, reference Figure 1 and Figure 2 The exhaust pipeline (not shown in the figure) is provided with a negative pressure generating device 72.

[0059] In some embodiments of the present invention, the negative pressure generating device is connected to the control module.

[0060] Specifically, the third exhaust pipe 75 and the second exhaust pipe 76 are connected in parallel, and one end of the exhaust pipe (not shown in the figure) is respectively connected to the third exhaust pipe 75 and the second exhaust pipe 76. The two ends of the first switch valve 71 are respectively connected to the semiconductor processing chamber 100 and the negative pressure generating device 72 through pipelines; the two ends of the second switch valve 73 are respectively connected to the semiconductor processing chamber 100 and the mechanical current limiting device 74 through pipelines, and the other end of the mechanical current limiting device 74 is connected to the negative pressure generating device 72 through a pipeline.

[0061] In some specific embodiments of the present invention, the negative pressure generating device is a vacuum pump, a negative pressure fan or a vacuum generator.

[0062] In some specific embodiments of the present invention, reference Figure 1 and Figure 2 The positive pressure air intake line 4 includes a first air intake pipe 41 connected to the semiconductor processing chamber 100 and a third switch valve 42 arranged on the first air intake pipe 41, the third switch valve 42 is connected to the control module 3, and the other end of the first air intake pipe 41 is connected to the gas source.

[0063] In some specific embodiments of the present invention, reference Figure 1 and Figure 2 The positive pressure exhaust control pipeline 5 includes a first exhaust pipe 51 connected to the semiconductor processing chamber 100, and a fourth switch valve 52 and a one-way valve 53 sequentially arranged in the first exhaust pipe 51, and the fourth switch valve 52 is connected to the control module 3. The other end of the first exhaust pipe 51 is connected to the exhaust gas treatment device 8, and the one-way valve 53 is arranged close to the exhaust gas treatment device 8. The one-way valve 53 can prevent the gas in the exhaust gas treatment device 8 from flowing back. The one-way valve 53 is selected and adapted by the rate of gas transmission through the first air inlet pipe 41, so that when the third switch valve 42 and the fourth switch valve 52 are both in the open state, and the purge gas is continuously introduced and discharged through the first air inlet pipe 41 and the first exhaust pipe 51, the pressure in the semiconductor processing chamber is within the positive pressure setting range.

[0064] In some specific embodiments of the present invention, reference Figure 1 and Figure 2The negative pressure air intake control pipeline 6 includes a second air intake pipe 61 connected to the semiconductor processing chamber 100, and a fifth switch valve 62 and a flow control device 63 sequentially arranged on the second air intake pipe 61. The fifth switch valve 62 and the flow control device 63 are respectively communicated with the control module 3. The other end of the second air intake pipe 61 is connected to the gas source. The setting of the flow control device 63 helps to regulate the rising rate of the pressure in the semiconductor processing chamber 100, so as to avoid the problem that the pressure in the semiconductor processing chamber 100 is easily overshot due to the rapid rise of pressure under negative pressure conditions, or even causes the pressure in the semiconductor processing chamber to reach a positive pressure.

[0065] In some specific embodiments of the present invention, the gas source is an inert gas, such as nitrogen.

[0066] In some specific embodiments of the present invention, the first switch valve, the second switch valve, the third switch valve, the fourth switch valve, and the fifth switch valve are all electrically controlled valves or pneumatic valves.

[0067] In some embodiments of the present invention, reference Figure 1 and Figure 2 The semiconductor processing equipment further includes a pressure relief control pipeline connected to the semiconductor processing chamber 100 , and the pressure relief control pipeline includes a pressure relief pipeline 9 and a safety pressure relief valve 91 arranged on the pressure relief pipeline 9 .

[0068] In some embodiments of the present invention, reference Figure 1 The two ends of the pressure relief pipeline 9 are respectively connected to the semiconductor processing chamber 100 and the exhaust gas treatment device 8.

[0069] In some specific embodiments of the present invention, the safety relief valve 91 is a mechanical relief valve. The safety relief valve is selected and adapted according to the overpressure control requirements of the semiconductor processing chamber, so that when the pressure in the semiconductor processing chamber exceeds the upper pressure limit, the safety relief valve 91 automatically releases pressure.

[0070] In some embodiments of the present invention, the control method of the semiconductor processing equipment includes using the semiconductor processing equipment to perform a positive pressure purge control step or a negative pressure purge control step on the object to be processed.

[0071] In some embodiments of the present invention, reference Figure 3 , the control method of the semiconductor processing equipment comprises the following steps:

[0072] S0: placing an object to be processed in the semiconductor processing chamber;

[0073] S1: the pressure sensing device acquires and sends to the control module the pressure information in the semiconductor processing chamber, and the detection device acquires and sends to the control module the detection object information in the semiconductor processing chamber;

[0074] S2: The control module selects whether to perform a positive pressure purge control step or a negative pressure purge control step on the object to be processed according to the detected object information.

[0075] In some embodiments of the present invention, after the control module determines that harmful substances and water and oxygen are contained according to the detected object information, or after determining that harmful substances are contained during the execution of the positive-pressure purge control step, the control module executes the negative-pressure purge control step and then the positive-pressure purge control step, thereby ensuring that harmful substances can be removed first, ensuring that harmful substances can be removed in a timely manner, and being beneficial to improving safety.

[0076] In some embodiments of the present invention, the control module performs the positive pressure purge control step after determining that harmful substances are present according to the detected object information, and then performs the positive pressure purge control step after performing the negative pressure purge control step. That is, it includes: since the negative pressure air intake control pipeline and the exhaust control pipeline are both in a closed state during the positive pressure purge control step, the control module controls the positive pressure purge control pipeline to be in a closed state after determining that harmful substances are present during the positive pressure purge control step, and then controls the exhaust control pipeline to adjust the pressure in the semiconductor processing chamber to within the negative pressure setting range according to the pressure information sent by the pressure sensor device.

[0077] Specifically, refer to Figures 4 to 6 , after judging that harmful substances need to be removed, the negative pressure purge control step is executed. After the negative pressure purge control step is completed or during execution, after judging that water and oxygen need to be removed, the positive pressure purge control step is executed after the negative pressure purge control step is completed. After judging that water and oxygen need to be removed, the positive pressure purge control step is executed. After judging that harmful substances need to be removed, the negative pressure purge execution step is executed. After judging that both water and oxygen need to be removed and harmful substances need to be removed, the negative pressure purge control step is executed first, and then the positive pressure purge control step is executed.

[0078] In some embodiments of the present invention, the negative pressure purge control step includes: after the control module determines that harmful substances are contained according to the detected object information and controls the positive pressure purge control pipeline to be in a closed state, the exhaust control pipeline and the negative pressure intake control pipeline are controlled according to the pressure information, so that the pressure in the semiconductor processing chamber is within the negative pressure setting range, and the purge gas is introduced into the semiconductor processing chamber and the exhaust control operation is performed. In the process of executing the negative pressure purge control step, the pressure in the semiconductor processing chamber is controlled within a reasonable negative pressure setting range, which is conducive to the safe removal of harmful substances and can also prevent excessive negative pressure from causing external pressure to be applied to the semiconductor processing chamber and cause damage.

[0079] In some embodiments of the present invention, in the negative pressure purge control step, the step in which the control module controls the exhaust control pipeline and the negative pressure air intake control pipeline according to the pressure information includes: after the control module controls the exhaust control pipeline to be in a closed state, the negative pressure air intake control pipeline is controlled to intake air into the semiconductor processing chamber and perform air intake flow control until the pressure in the semiconductor processing chamber is within the negative pressure setting range and approaches the negative pressure lower limit of the negative pressure setting range. By controlling the negative pressure air intake control pipeline to perform air intake flow control, not only the removal efficiency of harmful substances can be guaranteed, but also the pressure rise rate in the semiconductor processing chamber can be controlled.

[0080] In some embodiments of the present invention, in the negative pressure purge control step, the step in which the control module controls the exhaust control pipeline and the negative pressure air intake control pipeline according to the pressure information also includes: after the control module controls the negative pressure air intake control pipeline to be in a closed state, the exhaust control pipeline is controlled to perform the exhaust control on the semiconductor processing chamber until the pressure in the semiconductor processing chamber is within the negative pressure setting range and close to the negative pressure upper limit of the negative pressure setting range, and the negative pressure degree of the negative pressure lower limit is lower than the negative pressure degree of the negative pressure upper limit.

[0081] In some embodiments of the present invention, when the negative pressure purge control step is executed, the exhaust control step includes: after the control module controls the positive pressure purge control pipeline and the positive pressure exhaust pipeline to be in a closed state, the negative pressure exhaust control pipeline is controlled to perform exhaust flow limiting control, and exhaust is performed through the exhaust pipeline. By controlling the negative pressure exhaust control pipeline to perform exhaust flow limiting control, not only can the removal efficiency of harmful substances be guaranteed, but also the pressure in the semiconductor processing chamber such as the glove box can be prevented from dropping too quickly and exceeding the tolerance range of the glove box, resulting in an accidental damage to the glove box, which is beneficial to protecting the semiconductor processing equipment and extending the service life of the semiconductor processing equipment.

[0082] In some embodiments of the present invention, during the negative pressure purge control step, the positive pressure purge control pipeline is controlled to be in a closed state to ensure that the semiconductor processing chamber is under negative pressure during the negative pressure purge control step.

[0083] In some embodiments of the present invention, reference Figure 1 and Figure 2 , the negative pressure purge control step includes:

[0084] T0: the control module 3 controls the positive pressure purge control pipeline to be in a closed state;

[0085] T1: the control module 3 controls the semiconductor processing chamber 100 to have a negative pressure;

[0086] T2: the control module 3 controls to close the exhaust control pipeline 7 and opens the negative pressure air intake control pipeline 6 to increase the pressure in the semiconductor processing chamber 100, and performs air intake flow control to maintain the pressure in the semiconductor processing chamber 100 within the negative pressure setting range until the pressure in the semiconductor processing chamber 100 is within the negative pressure setting range and approaches the negative pressure lower limit of the negative pressure setting range;

[0087] T3: the control module 3 controls to close the negative pressure air intake control pipeline 6, opens the negative pressure exhaust control pipeline to perform the exhaust control on the semiconductor processing chamber 100, releases the pressure in the semiconductor processing chamber 100, and controls the semiconductor processing chamber 100 to be negative pressure, until the pressure in the semiconductor processing chamber 100 is within the negative pressure setting range and approaches the negative pressure upper limit of the negative pressure setting range;

[0088] T4: Repeat the air intake flow control and the exhaust gas extraction control in the order of step T2 and step T3 until the harmful substance content in the semiconductor processing chamber 100 reaches below the required limit.

[0089] In some embodiments of the present invention, reference Figure 1 and Figure 2 In step T1, the step in which the control module 3 controls the semiconductor processing chamber 100 to have a negative pressure includes: when the control module 3 determines that the negative pressure level in the semiconductor processing chamber 100 is greater than the negative pressure upper limit of the negative pressure setting range according to the pressure information, after controlling the exhaust control pipeline 7 to be in a closed state, the negative pressure intake control pipeline 6 is controlled to control the intake flow rate so that the pressure in the semiconductor processing chamber 100 is within the negative pressure setting range.

[0090] In some other embodiments of the present invention, reference Figure 1 and Figure 2In step T1, the step in which the control module 3 controls the semiconductor processing chamber 100 to have a negative pressure includes: when the control module 3 determines that the negative pressure level in the semiconductor processing chamber 100 is less than the negative pressure lower limit of the negative pressure setting range according to the pressure information, after controlling the negative pressure air intake control pipeline 6 to be in a closed state, the exhaust control pipeline 7 is controlled to perform the exhaust control so that the pressure in the semiconductor processing chamber 100 is within the negative pressure setting range.

[0091] In some specific embodiments of the present invention, reference Figure 1 and Figure 2 In step T1, the step of controlling the semiconductor processing chamber 100 to have a negative pressure by the control module 3 includes:

[0092] T11: the pressure sensing device 2 acquires and sends the pressure value in the semiconductor processing chamber 100 to the control module 3;

[0093] T12: The control module 3 determines and analyzes whether the pressure value is within the negative pressure setting range, and after determining that the pressure value is not within the negative pressure setting range, the control module 3 controls the closing of the positive pressure intake pipeline 4, the negative pressure intake control pipeline 6 and the positive pressure exhaust control pipeline 5, and opens the first switch valve 71 and the negative pressure generating device 72 to exhaust the semiconductor processing chamber 100 through the second exhaust pipe 76 and the exhaust pipeline until the pressure in the semiconductor processing chamber 100 drops to the negative pressure setting range and approaches the negative pressure upper limit of the negative pressure setting range.

[0094] In some embodiments of the present invention, reference Figure 1 and Figure 2 In step T3, the control module 3 controls the opening of the negative pressure exhaust control pipeline to perform the exhaust control on the semiconductor processing chamber 100, including: the control module 3 controls the opening of the second switch valve 73 to exhaust gas from the semiconductor processing chamber 100 through the third exhaust pipe 75 to release the pressure, and the gas is discharged through the exhaust pipeline through the mechanical flow limiting device 74 until the pressure in the semiconductor processing chamber 100 is controlled to be no lower than the negative pressure lower limit of the negative pressure setting range.

[0095] In some embodiments of the present invention, the negative pressure setting range can be set according to the pressure resistance limit of the semiconductor processing equipment, the properties of the object to be processed, the processing process, etc.

[0096] In some embodiments of the present invention, the negative pressure setting range is -1mbar~-5mbar, the negative pressure lower limit of the negative pressure setting range is -1mbar, and the negative pressure upper limit of the negative pressure setting range is -5mbar. This negative pressure setting range is convenient for operators to perform pressurized operations in the semiconductor processing chamber and will not adversely affect the purge control process. For example, when the semiconductor processing equipment is a glove box, the operator needs to insert the gloves into the glove box to operate, and at this time the pressure in the semiconductor processing chamber needs to be set to a pressure range that does not affect the operator's operation.

[0097] In some embodiments of the present invention, in the negative pressure purge control step, the intake rate of the intake flow control does not exceed 0.5 mbar / s to prevent the pressure in the semiconductor processing chamber from rising rapidly beyond the negative pressure setting range or even reaching positive pressure.

[0098] In some embodiments of the present invention, in the negative pressure purge control step, the exhaust rate of the exhaust current limiting control does not exceed 0.5 mbar / s to avoid the pressure in the semiconductor processing chamber such as the glove box dropping too quickly and exceeding the tolerance range of the glove box, thereby causing an unexpected situation of damage to the glove box.

[0099] In some specific embodiments of the present invention, reference Figure 1 and Figure 2 , the control method of the semiconductor processing equipment comprises the following steps:

[0100] S101: an object to be processed is placed in the semiconductor processing chamber 100 and processed, the harmful substance content detector 13 obtains and sends harmful substance content information in the semiconductor processing chamber 100 to the control module 3; the pressure sensor device 2 obtains and sends pressure information in the semiconductor processing chamber 100 to the control module 3;

[0101] S102: After the control module 3 determines that there are harmful substances and the pressure in the semiconductor processing chamber 100 is not within the negative pressure setting range, the control module 3 controls to close the third switch valve 42, the fourth switch valve 52 and the fifth switch valve 62, and opens the first switch valve 71 and the negative pressure generating device 72 to evacuate the semiconductor processing chamber 100 through the second exhaust pipe 76 until the pressure in the semiconductor processing chamber 100 drops to the negative pressure setting range and approaches the negative pressure upper limit of the negative pressure setting range;

[0102] S103: the control module 3 controls to close the first switch valve 71 and the negative pressure generating device 72, and opens the fifth switch valve 62, so as to inflate the semiconductor processing chamber 100 through the second air inlet pipe 61, so as to increase the pressure in the semiconductor processing chamber 100, and control the pressure of the semiconductor processing chamber 100 to be maintained within the negative pressure setting range and close to the negative pressure lower limit of the negative pressure setting range;

[0103] S104: the control module 3 controls the fifth switch valve 62 to be closed, and opens the second switch valve 73 and the mechanical current limiting device 74 to release the pressure in the semiconductor processing chamber 100 through the third exhaust pipe 75, and controls the pressure in the semiconductor processing chamber 100 to be not lower than the negative pressure lower limit of the negative pressure setting range;

[0104] S105: Repeat the filling process and the exhaust process in the order of step S103 and step S104 until the harmful substances in the semiconductor processing chamber 100 are removed.

[0105] In some embodiments of the present invention, the positive pressure purge control step includes a positive pressure continuous purge control step.

[0106] In some embodiments of the present invention, the positive pressure continuous purge control step includes: after the control module determines the presence of water and oxygen according to the detected object information and controls the negative pressure air intake control pipeline and the exhaust control pipeline to be in a closed state, the positive pressure purge control pipeline is controlled according to the pressure information to continuously introduce and discharge purge gas into and out of the semiconductor processing chamber, and the pressure in the semiconductor processing chamber is within the positive pressure setting range, so as to achieve the purpose of quickly removing water and oxygen substances, help shorten the time of removing water and oxygen, and improve the efficiency of removing water and oxygen. Performing the positive pressure continuous purge control step is conducive to saving the amount of purge gas used.

[0107] In some embodiments of the present invention, the positive pressure purge control step further includes a positive pressure intermittent purge control step, which includes: after the control module determines the water-oxygen content according to the detected object information and controls the exhaust part of the negative pressure air intake control pipeline and the positive pressure purge control pipeline to be closed, the air intake part of the positive pressure purge control pipeline and the exhaust control pipeline are controlled according to the pressure information, so that after the purge gas is introduced into the semiconductor processing chamber, the exhaust control is performed on the semiconductor processing chamber, and the pressure in the semiconductor processing chamber is within the positive pressure setting range. In the case of low water-oxygen content, if the continuous purge and exhaust method in the above embodiment is continued, it will not be easy to eliminate the water-oxygen substances in the dead corners of the semiconductor processing chamber. At this time, the positive pressure intermittent purge control step can make the purge gas fully diffuse in the semiconductor processing chamber and merge evenly with the water-oxygen substances, so that the water-oxygen substances are easier to discharge when the exhaust control is performed. That is, the positive pressure intermittent purge control step can not only ensure the removal of water and oxygen substances in dead corners in the semiconductor processing chamber, but also reduce the amount of purge gas used.

[0108] In some embodiments of the present invention, in the positive pressure intermittent purge control step, the step in which the control module controls the air intake part of the positive pressure purge control pipeline and the exhaust gas extraction and exhaust control pipeline according to the pressure information includes: after the control module determines that the pressure in the semiconductor processing chamber is within the positive pressure setting range, and controls the exhaust part of the positive pressure purge control pipeline, the negative pressure air intake control pipeline and the exhaust gas extraction and exhaust control pipeline to be in a closed state, the air intake part of the positive pressure purge control pipeline is controlled to be in an open state and the purge gas is provided into the semiconductor processing chamber until the pressure in the semiconductor processing chamber is within the positive pressure setting range and approaches the positive pressure upper limit of the positive pressure setting range.

[0109] In some embodiments of the present invention, in the positive pressure intermittent purge control step, the step in which the control module controls the air intake part of the positive pressure purge control pipeline and the exhaust control pipeline according to the pressure information also includes: after the control module controls the air intake part of the positive pressure purge control pipeline to be in a closed state, the exhaust control pipeline is controlled to perform the exhaust control on the semiconductor processing chamber until the pressure in the semiconductor processing chamber is within the positive pressure setting range and close to the positive pressure lower limit of the positive pressure setting range.

[0110] In some embodiments of the present invention, when the positive pressure intermittent purge control step is executed, the exhaust control step includes: after the control module controls the positive pressure purge control pipeline and the negative pressure exhaust control pipeline to be in a closed state, the positive pressure exhaust pipeline is controlled to be in an open state, and exhaust is performed through the exhaust pipeline. The exhaust control step of the semiconductor processing chamber is implemented by using the positive pressure exhaust pipeline in the exhaust control pipeline to control the semiconductor processing chamber, so that the pressure in the semiconductor processing chamber is maintained within a reasonable positive pressure setting range, so as to reduce or avoid leakage of semiconductor processing equipment due to long-term pressure, extend the service life of the semiconductor equipment, and ensure the safety of the positive pressure purge process.

[0111] In some embodiments of the present invention, when the control module determines that the pressure in the semiconductor processing chamber is greater than the positive pressure upper limit of the positive pressure setting range based on the pressure information, the positive pressure purge control pipeline is controlled to be in a closed state, and then the exhaust control pipeline is controlled to perform the exhaust control so that the pressure in the semiconductor processing chamber is within the positive pressure setting range.

[0112] In other embodiments of the present invention, when the control module determines that the pressure in the semiconductor processing chamber is less than the positive pressure lower limit of the positive pressure setting range based on the pressure information, the exhaust parts of the exhaust control pipeline and the positive pressure purge control pipeline are controlled to be in a closed state, and then the air intake part of the positive pressure purge control pipeline is controlled to be in an open state to provide the purge gas, so that the pressure in the semiconductor processing chamber is within the positive pressure setting range.

[0113] In some embodiments of the present invention, the positive pressure purge control step also includes: the control module compares and judges the water and oxygen content value in the detection object information with the pre-stored water and oxygen setting comparison value and the water and oxygen setting minimum value; when the control module determines that the water and oxygen content value does not exceed the water and oxygen setting comparison value and is greater than the water and oxygen setting minimum value, the positive pressure intermittent purge control step is executed; when the control module determines that the water and oxygen content value is above the water and oxygen setting comparison value, the positive pressure continuous purge control step is executed.

[0114] In some embodiments of the present invention, reference Figure 1 and Figure 2 After the control module 3 determines that the water-oxygen content value is greater than the water-oxygen set comparison value, the steps of executing the positive pressure continuous purge control step include:

[0115] P211: the control module 3 controls the negative pressure air intake control pipeline 6 to be in a closed state;

[0116] P212: The control module 3 controls the opening of the positive pressure air inlet line 4 and the positive pressure exhaust control line 5 to allow the purge gas to be continuously introduced into and exhausted from the semiconductor processing chamber 100, and controls the pressure in the semiconductor processing chamber 100 to be maintained within the positive pressure setting range, so as to continuously ventilate the semiconductor processing chamber 100 to remove water and oxygen substances.

[0117] In some other embodiments of the present invention, reference Figure 1 and Figure 2 After the control module determines that the water-oxygen content value does not exceed the water-oxygen set comparison value and is greater than the water-oxygen set minimum value, the steps of executing the positive pressure intermittent purge control step include:

[0118] P221: the control module 3 controls the negative pressure air intake control pipeline 6 to be in a closed state;

[0119] P222: The control module 3 controls to close the positive pressure exhaust control pipeline 5 and the exhaust control pipeline 7, and opens the positive pressure air intake pipeline 4 to inflate the semiconductor processing chamber 100 until the pressure in the semiconductor processing chamber 100 is within the positive pressure setting range and close to the positive pressure upper limit of the positive pressure setting range;

[0120] P223: The control module 3 controls to close the positive pressure air inlet pipeline 4, opens the first switch valve 71, and exhausts air through the exhaust pipeline until the pressure in the semiconductor processing chamber 100 is within the positive pressure setting range and approaches the positive pressure lower limit of the positive pressure setting range;

[0121] P224: Repeat the inflation process and the exhaust process in the order of step P222 and step P223 until the water and oxygen substances in the semiconductor processing chamber are removed.

[0122] In the case of low water and oxygen content, if the continuous purge and exhaust method in the above embodiment is continued, it will not be easy to eliminate the water and oxygen substances in the dead corners of the semiconductor processing chamber. The above-mentioned method of repeatedly performing aeration and exhaust treatment to remove water and oxygen can not only ensure the removal of water and oxygen substances in the dead corners of the semiconductor processing chamber, but also reduce the amount of purge gas used.

[0123] In some embodiments of the present invention, reference Figure 1 and Figure 2, the step P223 also includes a pressure-maintaining treatment step: after the control module 3 controls the closing of the positive pressure air inlet pipe 4, the pressure in the semiconductor processing chamber 100 is maintained for a certain period of time, so that the purge gas is fully diffused in the semiconductor processing chamber 100 and merges evenly with the water and oxygen substances, and then the first switch valve 71 is opened and the gas is exhausted through the exhaust pipe. In the step P223, the pressure in the semiconductor processing chamber 100 is controlled to be maintained for a certain period of time, so that the purge gas can be fully diffused in the semiconductor processing chamber 100 and merge evenly with the water and oxygen substances, so that the water and oxygen substances are easier to be discharged during exhaust.

[0124] In some embodiments of the present invention, the control module controls the positive pressure purge control pipeline according to the pressure information so that the purge gas is continuously introduced into and exhausted from the semiconductor processing chamber, including:

[0125] The control module controls the positive pressure inlet pipeline and the positive pressure exhaust control pipeline to be in an open state so that the semiconductor processing chamber continuously introduces and continuously exhausts the purge gas, and the positive pressure exhaust control pipeline continuously exhausts the purge gas and performs one-way flow limiting control so that the pressure in the semiconductor processing chamber is within the positive pressure setting range. Performing one-way flow limiting control can effectively prevent backflow and maintain the pressure in the semiconductor processing chamber within the positive pressure setting range.

[0126] In some specific embodiments of the present invention, reference Figure 1 and Figure 2 , the control method of the semiconductor processing equipment comprises the following steps:

[0127] S201: an object to be processed is placed in the semiconductor processing chamber 100 and processed, the oxygen content detector 11 and the water content detector 12 obtain and send the water-containing oxygen in the semiconductor processing chamber 100 to the control module 3; the pressure sensor device 2 obtains and sends the pressure value in the semiconductor processing chamber 100 to the control module 3;

[0128] S202: the control module 3 compares and analyzes the water-oxygen content value in the water-containing oxygen with the pre-stored water-oxygen setting comparison value and the water-oxygen setting minimum value;

[0129] S203: After the control module 3 determines that the water-oxygen content value is greater than the water-oxygen set comparison value, the control module 3 controls the third switch valve 42 to be opened to inflate the semiconductor processing chamber 100 through the first air inlet pipe 41, and controls the fourth switch valve 52 and the one-way valve 53 to be opened to exhaust the semiconductor processing chamber 100 through the first exhaust pipe 51, and controls the pressure in the semiconductor processing chamber 100 to be maintained within the positive pressure setting range, so as to continuously ventilate the semiconductor processing chamber 100 to remove water and oxygen substances;

[0130] S204: After the control module 3 determines that the water-oxygen content value does not exceed the water-oxygen setting comparison value and is greater than the water-oxygen setting minimum value, the control module 3 controls the closing of the fourth switch valve 52 and the one-way valve 53, and opens the third switch valve 42, so as to inflate the semiconductor processing chamber 100 through the first air inlet pipe 41, and controls the pressure in the semiconductor processing chamber 100 to be maintained within the positive pressure setting range and close to the positive pressure upper limit of the positive pressure setting range;

[0131] S205: the control module 3 controls the third switch valve 42 to be closed and maintained for a certain period of time, so that the purge gas can be fully diffused in the semiconductor processing chamber 100 and evenly merged with the water and oxygen substances;

[0132] S206: the control module 3 controls to open the first switch valve 71 and the negative pressure generating device 72, so as to evacuate the semiconductor processing chamber 100 through the second exhaust pipe 76, so that the pressure in the semiconductor processing chamber 100 drops to the positive pressure setting range and approaches the positive pressure lower limit of the positive pressure setting range;

[0133] S207: Repeat the gas filling process, the pressure holding process and the exhaust process in the order of the step S204, the step S205 and the step S206 until the water and oxygen substances in the semiconductor processing chamber 100 are removed.

[0134] In some embodiments of the present invention, the positive pressure setting range is 3mbar ~ 5mbar to reduce or avoid leakage of semiconductor processing equipment due to long-term pressure, and also facilitate operators to perform pressurized operations in the semiconductor processing chamber through operating gloves.

[0135] In some embodiments of the present invention, when the pressure in the semiconductor processing chamber exceeds the set pressure limit, Figure 1 The relief control line shown is venting to the outside.

[0136] In some embodiments of the present invention, the set pressure limit is 15 mbar.

[0137] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A control method for semiconductor processing equipment, characterized in that: The method comprises executing a positive pressure purge control step or a negative pressure purge control step, wherein the positive pressure purge control step comprises a positive pressure continuous purge control step; The semiconductor processing equipment comprises a semiconductor processing chamber provided with a detection device, a control module and a pressure sensor device, the semiconductor processing chamber is provided with a positive pressure purge control pipeline, a negative pressure air intake control pipeline and an exhaust control pipeline, and an object to be processed is placed in the semiconductor processing chamber; The positive pressure continuous purge control step includes: after the control module determines that the detected object contains water and oxygen according to the detected object information sent by the detection device and controls the negative pressure air intake control pipeline and the exhaust control pipeline to be in a closed state, the positive pressure purge control pipeline is controlled according to the pressure information sent by the pressure sensor device, so that the purge gas is continuously introduced into and discharged from the semiconductor processing chamber, and the pressure in the semiconductor processing chamber is within the positive pressure setting range; The negative pressure purge control step includes: after the control module determines that the detection object information sent by the detection device contains harmful substances and controls the positive pressure purge control pipeline to be in a closed state, the exhaust control pipeline and the negative pressure air intake control pipeline are controlled according to the pressure information sent by the pressure sensor device, so that the pressure in the semiconductor processing chamber is within the negative pressure setting range, and the semiconductor processing chamber is respectively subjected to the operation of introducing the purge gas and performing the exhaust control operation.

2. The control method of semiconductor processing equipment according to claim 1, characterized in that: After the control module determines that the detected object contains harmful substances and water and oxygen according to the detected object information, or determines that harmful substances are contained during the execution of the positive pressure purge control step, the control module executes the negative pressure purge control step and then executes the positive pressure purge control step.

3. The control method of semiconductor processing equipment according to claim 1, characterized in that: The negative pressure setting range is -1mbar~-5mbar, the negative pressure lower limit of the negative pressure setting range is -1mbar, the negative pressure upper limit of the negative pressure setting range is -5mbar, and the positive pressure setting range is 3mbar ~ 5mbar.

4. The control method of semiconductor processing equipment according to claim 1, characterized in that: The positive pressure purge control step also includes a positive pressure intermittent purge control step, and the positive pressure intermittent purge control step includes: After the control module determines that the detected object contains water and oxygen based on the detected object information and controls the exhaust parts of the negative pressure air intake control pipeline and the positive pressure purge control pipeline to be in a closed state, the control module controls the air intake part of the positive pressure purge control pipeline and the exhaust control pipeline based on the pressure information sent by the pressure sensor device, so that the pressure in the semiconductor processing chamber performs the operation of introducing the purge gas and the exhaust control operation on the semiconductor processing chamber within the positive pressure setting range.

5. The control method of semiconductor processing equipment according to claim 1, characterized in that: The exhaust control pipeline includes a negative pressure exhaust control pipeline and a positive pressure exhaust pipeline connected in parallel with the semiconductor processing chamber, and an exhaust pipeline connected with the negative pressure exhaust control pipeline and the positive pressure exhaust pipeline; When the negative pressure purge control step is executed, the exhaust control step includes: after the control module controls the negative pressure intake control pipeline and the positive pressure exhaust pipeline to be in a closed state, the negative pressure exhaust control pipeline is controlled to perform exhaust flow limiting control, and exhaust is performed through the exhaust pipeline.

6. The control method of semiconductor processing equipment according to claim 4, characterized in that: The exhaust control pipeline includes a negative pressure exhaust control pipeline and a positive pressure exhaust pipeline connected in parallel with the semiconductor processing chamber, and an exhaust pipeline connected with the negative pressure exhaust control pipeline and the positive pressure exhaust pipeline; When the positive pressure intermittent purge control step is executed, the exhaust control step includes: the control module controls the air intake part of the positive pressure purge control pipeline and the negative pressure exhaust control pipeline to be in a closed state, and then controls the positive pressure exhaust pipeline to be in an open state, and exhausts air through the exhaust pipeline.

7. The control method of semiconductor processing equipment according to claim 5, characterized in that: The exhaust rate of the exhaust flow limiting control does not exceed 0.5 mbar / s.

8. The control method of semiconductor processing equipment according to claim 1, characterized in that: In the negative pressure purge control step, the step of controlling the exhaust control pipeline and the negative pressure air intake control pipeline according to the pressure information sent by the pressure sensor device includes: After controlling the exhaust control pipeline to be in a closed state, controlling the negative pressure air intake control pipeline to intake air into the semiconductor processing chamber at a rate not exceeding 0.5 mbar / s until the pressure in the semiconductor processing chamber is within the negative pressure setting range and approaches the negative pressure lower limit of the negative pressure setting range; After controlling the negative pressure air intake control pipeline to be in a closed state, the exhaust control pipeline is controlled to exhaust the semiconductor processing chamber at a rate not exceeding 0.5 mbar / s until the pressure in the semiconductor processing chamber is within the negative pressure setting range and close to the negative pressure upper limit of the negative pressure setting range, and the negative pressure level of the negative pressure lower limit is lower than the negative pressure level of the negative pressure upper limit.

9. The control method of semiconductor processing equipment according to claim 4, characterized in that: The positive pressure purge control step further includes: the control module compares and determines the water-oxygen content value in the detected object information with the pre-stored water-oxygen setting comparison value and the water-oxygen setting minimum value; When the control module determines that the water-oxygen content value does not exceed the water-oxygen set comparison value and is greater than the water-oxygen set minimum value, the positive pressure intermittent purge control step is executed; When the control module determines that the water-oxygen content value is above the water-oxygen set comparison value, the positive-pressure continuous purge control step is executed.

10. The control method of semiconductor processing equipment according to claim 1, characterized in that: The positive pressure purge control pipeline includes a positive pressure intake pipeline and a positive pressure exhaust control pipeline. In the positive pressure continuous purge control step, the step of controlling the positive pressure purge control pipeline according to the pressure information sent by the pressure sensor device includes: The positive pressure air inlet pipeline and the positive pressure exhaust control pipeline are controlled to be in an open state, and the purge gas is continuously introduced into and discharged from the semiconductor processing chamber. The positive pressure exhaust control pipeline continuously discharges the purge gas and performs one-way flow limiting control to ensure that the pressure in the semiconductor processing chamber is within the positive pressure setting range.

11. A semiconductor processing device, characterized in that: Used to perform a positive pressure purge control step and a negative pressure purge control step on the object to be processed, wherein the positive pressure purge control step includes a positive pressure continuous purge control step; The semiconductor processing equipment comprises: Control module; A detection device, disposed in the semiconductor processing chamber and connected to the control module, to obtain and send detection object information to the control module; A pressure sensing device, disposed in the semiconductor processing chamber and connected to the control module, to obtain and send pressure information to the control module; The semiconductor processing chamber is provided with a positive pressure purge control pipeline, a negative pressure air intake control pipeline and an exhaust control pipeline connected to the control module; The control module is used to control the positive pressure purge control pipeline according to the pressure information to perform the positive pressure continuous purge control step on the object to be treated after determining that the object contains water and oxygen according to the information of the detected object; The control module is also used to control the exhaust control pipeline and the negative pressure air intake control pipeline according to the pressure information to perform the negative pressure purge control step on the object to be processed after determining that the object contains harmful substances according to the detected object information.

12. The semiconductor processing equipment according to claim 11, characterized in that The positive-pressure purge control step also includes a positive-pressure intermittent purge control step, the exhaust and exhaust control pipeline includes a negative-pressure exhaust control pipeline and a positive-pressure exhaust pipeline connected to the semiconductor processing chamber and in parallel, and an exhaust pipeline connected to the negative-pressure exhaust control pipeline and the positive-pressure exhaust pipeline, the control module is used to control the air intake part of the positive-pressure purge control pipeline, the positive-pressure exhaust pipeline and the exhaust pipeline to perform the positive-pressure intermittent purge control step, and to control the negative-pressure air intake control pipeline and the negative-pressure exhaust control pipeline to perform the negative-pressure purge control step.

13. The semiconductor processing equipment according to claim 12, characterized in that The positive-pressure exhaust pipeline includes a second exhaust pipe and a first switch valve arranged on the second exhaust pipe, and the negative-pressure exhaust control pipeline includes a third exhaust pipe, and a second switch valve and a mechanical current limiting device arranged in sequence on the third exhaust pipe, at least one of the second exhaust pipe and the third exhaust pipe is connected to the semiconductor processing chamber, and ends of the second exhaust pipe and the third exhaust pipe are both connected to the exhaust pipeline, and the control module connects the first switch valve and the second switch valve.

14. The semiconductor processing equipment according to claim 11, characterized in that The positive pressure purge control pipeline includes a positive pressure intake pipeline and a positive pressure exhaust control pipeline, the positive pressure intake pipeline includes a first intake pipe and a third switch valve arranged on the first intake pipe, the positive pressure exhaust control pipeline includes a first exhaust pipe and a fourth switch valve and a one-way valve arranged on the first exhaust pipe in sequence, the first intake pipe and the first exhaust pipe are connected to the semiconductor processing chamber, and the third switch valve and the fourth switch valve are connected to the control module.

15. The semiconductor processing equipment according to claim 11, characterized in that The negative pressure air intake control pipeline includes a second air intake pipe connected to the semiconductor processing chamber, and a fifth switch valve and a flow control device sequentially arranged on the second air intake pipe, and the fifth switch valve and the flow control device are connected to the control module.

16. The semiconductor processing equipment according to claim 11, characterized in that It also includes an exhaust gas treatment device, and the exhaust part of the positive pressure purge control pipeline and the end of the exhaust gas extraction control pipeline are connected to the exhaust gas treatment device.

17. The semiconductor processing equipment according to claim 11, characterized in that The semiconductor processing chamber is also provided with operating gloves, so that the operator can perform pressurized operations in the semiconductor processing equipment through the operating gloves.

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